Produkte > BUK
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| BUK9K52-60RAX | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 64A Power dissipation: 32W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K52-60RAX | Nexperia | Trans MOSFET N-CH 60V 16A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K52-60RAX | Nexperia | MOSFETs The factory is currently not accepting orders for this product. | auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K5R1-30EX | Nexperia | Trans MOSFET N-CH 30V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K5R1-30EX | Nexperia USA Inc. | Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q100 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K5R1-30EX | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 329A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 10mΩ Mounting: SMD Gate charge: 26.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K5R1-30EX | Nexperia | MOSFETs BUK9K5R1-30E/SOT1205/LFPAK56D | auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K5R1-30EX | Nexperia | Trans MOSFET N-CH 30V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K5R1-30EX | Nexperia USA Inc. | Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q100 | auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K5R6-30EX | Nexperia USA Inc. | Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K5R6-30EX | Nexperia | MOSFETs BUK9K5R6-30E/SOT1205/LFPAK56D | auf Bestellung 3489 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K5R6-30EX | Nexperia | Trans MOSFET N-CH 30V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K5R6-30EX | Nexperia USA Inc. | Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q100 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K5R6-30EX | Nexperia | Trans MOSFET N-CH 30V 40A Automotive AEC-Q101 8-Pin LFPAK-D T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K5R6-30EX | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 305A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 305A Power dissipation: 64W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K61-100LX | Nexperia USA Inc. | Description: BUK9K61-100L/SOT1205/LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.05V @ 30µA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K61-100LX | NEXPERIA | Description: NEXPERIA - BUK9K61-100LX - Dual-MOSFET, Zweifach n-Kanal, 100 V, 15 A, 0.0601 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (25-Jun-2025) | auf Bestellung 1368 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K61-100LX | Nexperia USA Inc. | Description: BUK9K61-100L/SOT1205/LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.05V @ 30µA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K61-100LX | Nexperia | MOSFETs BUK9K61-100L/SOT1205/LFPAK56D | auf Bestellung 1172 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K61-100LX | NEXPERIA | Description: NEXPERIA - BUK9K61-100LX - Dual-MOSFET, Zweifach n-Kanal, 100 V, 15 A, 0.0601 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 15A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0601ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 32W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) | auf Bestellung 1368 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K6R2-40E,115 | Nexperia | MOSFETs The factory is currently not accepting orders for this product. | auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K6R2-40E,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K6R2-40E,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 295A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 295A Power dissipation: 68W Case: LFPAK56D; SOT1205 Gate-source voltage: ±10V On-state resistance: 6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K6R2-40E,115 | Nexperia | Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK-D T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K6R2-40E,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K6R2-40E,115 | Nexperia | Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K6R8-40EX | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 265A Power dissipation: 64W Case: LFPAK56D; SOT1205 On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K6R8-40EX | Nexperia | Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K6R8-40EX | Nexperia | Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK-D T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K6R8-40EX | Nexperia | Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K6R8-40EX | Nexperia | Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 55500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K6R8-40EX | Nexperia | Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K6R8-40EX | Nexperia | MOSFETs BUK9K6R8-40E/SOT1205/LFPAK56D | auf Bestellung 2767 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K6R8-40EX | Nexperia | Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K89-100E,115 | Nexperia | Trans MOSFET N-CH 100V 12.5A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K89-100E,115 | Nexperia | MOSFETs The factory is currently not accepting orders for this product. | auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K89-100E,115 | Nexperia | Trans MOSFET N-CH 100V 12.5A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K89-100E,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K89-100E,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.9A Pulsed drain current: 50A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 245mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K89-100E,115 | Nexperia | Trans MOSFET N-CH 100V 12.5A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K89-100E,115 | Nexperia | Trans MOSFET N-CH 100V 12.5A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K89-100E,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K89-100E115 | NXP USA Inc. | Description: NOW NEXPERIA BUK9K89-100E - POWE Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K8R7-40EX | Nexperia | MOSFETs The factory is currently not accepting orders for this product. | auf Bestellung 9317 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K8R7-40EX | Nexperia | Trans MOSFET N-CH 40V 30A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K8R7-40EX | Nexperia | Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K8R7-40EX | Nexperia | Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K8R7-40EX | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9K8R7-40EX | Nexperia USA Inc. | Description: MOSFET 2N-CH 40V 30A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q100 | auf Bestellung 10172 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K8R7-40EX | Nexperia | Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K8R7-40EX | Nexperia | Trans MOSFET N-CH 40V 30A Automotive AEC-Q101 8-Pin LFPAK-D T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9K8R7-40EX | Nexperia USA Inc. | Description: MOSFET 2N-CH 40V 30A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q100 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K8R7-40EX | Nexperia | Trans MOSFET N-CH 40V 30A 8-Pin LFPAK-D T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M10-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 54A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M10-30EX | Nexperia | MOSFETs BUK9M10-30E/SOT1210/mLFPAK | auf Bestellung 686 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M10-30EX | Nexperia | Trans MOSFET N-CH 30V 54A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M10-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 216A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M10-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 54A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 53A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M11-40EX | Nexperia | MOSFETs BUK9M11-40E/SOT1210/mLFPAK | auf Bestellung 2687 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M11-40EX | Nexperia | Trans MOSFET N-CH 40V 53A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 211A Power dissipation: 62W Case: LFPAK33; SOT1210 On-state resistance: 22mΩ Mounting: SMD Gate charge: 13.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 53A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2963 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M11-40EX | Nexperia | Trans MOSFET N-CH 40V 53A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M11-40HX | Nexperia | Trans MOSFET N-CH 40V 35A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40HX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 34A Pulsed drain current: 193A Power dissipation: 50W Case: LFPAK33; SOT1210 On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40HX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 35A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M11-40HX | NEXPERIA | Description: NEXPERIA - BUK9M11-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 35 A, 9000 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.85V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: LFPAK Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9000µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M11-40HX | Nexperia | Trans MOSFET N-CH 40V 35A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40HX | NXP Semiconductors | BUK9M11-40HX | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M11-40HX | Nexperia | MOSFETs BUK9M11-40H/SOT1210/mLFPAK | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M11-40HX | NEXPERIA | Description: NEXPERIA - BUK9M11-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 35 A, 9000 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.85V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: LFPAK Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9000µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M11-40HX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 35A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M12-60EX | NEXPERIA | Description: NEXPERIA - BUK9M12-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 54 A, 9000 µohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 79W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 9000µohm | auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M12-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 54A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2043 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M12-60EX | Nexperia | Trans MOSFET N-CH 60V 54A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M12-60EX | Nexperia | MOSFETs BUK9M12-60E/SOT1210/mLFPAK | auf Bestellung 7343 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M12-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 54A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M12-60EX | NEXPERIA | Description: NEXPERIA - BUK9M12-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 54 A, 9000 µohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 79W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 9000µohm | auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M12-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 216A Power dissipation: 79W Case: LFPAK33; SOT1210 On-state resistance: 27mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M12-60EX | Nexperia | Trans MOSFET N-CH 60V 54A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M120-100EX | NEXPERIA | Description: NEXPERIA - BUK9M120-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 11.5 A, 0.096 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 44W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.096ohm | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M120-100EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.1A; Idm: 46A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.1A Pulsed drain current: 46A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 0.34Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M120-100EX | Nexperia USA Inc. | Description: MOSFET N-CH 100V 11.5A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M120-100EX | Nexperia | Trans MOSFET N-CH 100V 11.5A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M120-100EX | Nexperia USA Inc. | Description: MOSFET N-CH 100V 11.5A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M120-100EX | NEXPERIA | Description: NEXPERIA - BUK9M120-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 11.5 A, 0.096 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 44W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.096ohm | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M120-100EX | Nexperia | MOSFETs BUK9M120-100E/SOT1210/mLFPAK | auf Bestellung 3944 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M13-80LX | Nexperia | N-channel logic level MOSFET | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M13-80LX | NEXPERIA | Description: NEXPERIA - BUK9M13-80LX - Leistungs-MOSFET, n-Kanal, 80 V, 55 A, 0.0125 ohm, LFPAK33, Oberflächenmontage tariffCode: 85423990 euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Source-Schwellenspannung, max.: 2.05V Verlustleistung: 91W SVHC: Lead (25-Jun-2025) Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0125ohm | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M13-80LX | Nexperia USA Inc. | Description: BUK9M13-80L/SOT1210/MLFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V Power Dissipation (Max): 91W (Ta) Vgs(th) (Max) @ Id: 2.05V @ 120µA Supplier Device Package: LFPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 51.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3341 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1840 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M13-80LX | Nexperia | MOSFETs N-channel 80 V, 13 mOhm logic level MOSFET in LFPAK33 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M13-80LX | Nexperia USA Inc. | Description: BUK9M13-80L/SOT1210/MLFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V Power Dissipation (Max): 91W (Ta) Vgs(th) (Max) @ Id: 2.05V @ 120µA Supplier Device Package: LFPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 51.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3341 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M13-80LX | NEXPERIA | Description: NEXPERIA - BUK9M13-80LX - Leistungs-MOSFET, n-Kanal, 80 V, 55 A, 0.0125 ohm, LFPAK33, Oberflächenmontage tariffCode: 85423990 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.05V Verlustleistung: 91W SVHC: Lead (25-Jun-2025) Bauform - Transistor: LFPAK33 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0125ohm | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9M14-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 44A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1211 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M14-40EX | Nexperia | MOSFETs BUK9M14-40E/SOT1210/mLFPAK | auf Bestellung 2228 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M14-40EX | Nexperia | Trans MOSFET N-CH 40V 44A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M14-40EX | Nexperia | Trans MOSFET N-CH 40V 44A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK9M14-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 44A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1211 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2911 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9M14-40EX | Nexperia | Trans MOSFET N-CH 40V 44A 8-Pin LFPAK EP T/R Automotive AEC-Q101 | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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