Produkte > DMT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMT3006LPB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 11A POWERDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type S) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3006LPB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Pulsed drain current: 80...100A Power dissipation: 1.7W Gate charge: 12.6nC Polarisation: unipolar Drain current: 9/11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 14mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3006LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 16A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 66458 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3006LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 16A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3008LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3008LFDF-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 20Vgs 0.5W 70A | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3008LFDF-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 20Vgs 0.5W 70A | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3008LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3008LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1W; DFN2020-6 Power dissipation: 2.1W Gate charge: 5.8nC Polarisation: unipolar Drain-source voltage: 30V Type of transistor: N-MOSFET Case: DFN2020-6 On-state resistance: 10mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDT | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDT-7 | Diodes Zetex | Trans MOSFET N-CH 30V 30A 8-Pin VDFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 30A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDT-7 | DIODES INC. | Description: DIODES INC. - DMT3009LDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 7200 µohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2195 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009LDT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Pulsed drain current: 80A Power dissipation: 1.2W Gate charge: 20nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -16...20V Kind of package: 7 inch reel; tape Case: V-DFN3030-8 On-state resistance: 22mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 2425 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 30A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 1662 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LDT-7 | DIODES INC. | Description: DIODES INC. - DMT3009LDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 7200 µohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 7200µohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 7200µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2195 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009LDV-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 823pF @ 15V Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDV-7 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 823pF @ 15V Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LDV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LEV | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LEV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LEV-13 | Diodes Incorporated | Description: MOSFET 25V-30V POWERDI3333-8 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LEV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LEV-7 | Diodes Incorporated | Description: MOSFET 25V-30V POWERDI3333-8 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVW-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V | auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 1789 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVWQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 On-state resistance: 20mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Pulsed drain current: 90A Power dissipation: 2.3W Gate charge: 12nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI®3333-8 On-state resistance: 20mΩ Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009LFVWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1264 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 2484 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LSS-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 14.4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LSSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 2209 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009LSSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 14.4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009UDT-7 | DIODES INC. | Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 0.0111 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10.6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0111ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009UDT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 1.5K | auf Bestellung 1442 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009UDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10.6A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta), 16W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: V-DFN3030-8 (Type KS) Part Status: Active | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009UDT-7 | DIODES INC. | Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 8600 µohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10.6A Dauer-Drainstrom Id, p-Kanal: 10.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10.6A Drain-Source-Durchgangswiderstand, p-Kanal: 8600µohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 8600µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009UDT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 10.6A; V-DFN3030-8; common source Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 10.6A Case: V-DFN3030-8 Mounting: SMD Gate charge: 14.6nC Kind of channel: enhancement Semiconductor structure: common source | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009UFVW-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10.6A/30A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009UFVW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009UFVW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009UFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Pulsed drain current: 80A Power dissipation: 2.6W Gate charge: 14.6nC Polarisation: unipolar Drain current: 8.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 13mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3009UFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 10.6A/30A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3011LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3011LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 8052 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3011LDT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8.5A 8VDFN Supplier Device Package: V-DFN3030-8 (Type K) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 670mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LDT-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LDV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 32A PWRDI3333 Supplier Device Package: PowerDI3333-8 (Type UXC) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 900mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDV-13 | Diodes Zetex | Trans MOSFET N-CH 30V 32A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LDV-13 | Diodes Zetex | Trans MOSFET N-CH 30V 32A 8-Pin PowerDI EP T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LDV-7 | Diodes Zetex | Trans MOSFET N-CH 30V 32A 8-Pin PowerDI EP T/R | auf Bestellung 146000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LDV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Pulsed drain current: 50A Power dissipation: 1.9W Gate charge: 7nC Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 32mΩ Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LDV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V PowerDI3333-8 T&R 2K | auf Bestellung 847 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDV-7 | DIODES INC. | Description: DIODES INC. - DMT3020LDV-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 32 A, 32 A, 0.014 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 32A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 32A Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm Verlustleistung, p-Kanal: 1.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.9W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1370 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 32A PWRDI3333 Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerDI3333-8 (Type UXC) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 900mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) | auf Bestellung 138116 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDV-7 | Diodes Zetex | Trans MOSFET N-CH 30V 32A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 32A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Part Status: Active | auf Bestellung 138000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDV-7 | DIODES INC. | Description: DIODES INC. - DMT3020LDV-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 32 A, 32 A, 0.014 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 32A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 32A Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm Verlustleistung, p-Kanal: 1.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.9W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1370 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFCL-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.6A 6-Pin UDFN EP T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFCL-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.6A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFCL-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 2515 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFCL-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN1616-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDB-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.7A 6-Pin UDFN EP T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDB-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.7A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDB-7 | DIODES INC. | Description: DIODES INC. - DMT3020LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.7A Dauer-Drainstrom Id, p-Kanal: 7.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 7.7A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 700mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 700mW Betriebstemperatur, max.: 150°C | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDB-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.7A 6-Pin UDFN EP T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDB-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.7A 6-Pin UDFN EP T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDB-7 | DIODES INC. | Description: DIODES INC. - DMT3020LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 7.7A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 700mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 700mW Betriebstemperatur, max.: 150°C | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDB-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.7A 6-Pin UDFN EP T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4136 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 1571 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDBQ-13 | DIODES INC. | Description: DIODES INC. - DMT3020LFDBQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.7A Dauer-Drainstrom Id, p-Kanal: 7.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9281 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDBQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDBQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDBQ-13 | DIODES INC. | Description: DIODES INC. - DMT3020LFDBQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9281 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3020LFDBQ-13 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDBQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDBQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDBQ-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDBQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDBQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Pulsed drain current: 50A Power dissipation: 1.8W Gate charge: 7nC Polarisation: unipolar Drain current: 6.2A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN2020-6 On-state resistance: 32mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDBQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-13 | Diodes Zetex | Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3020LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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