Produkte > DMG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMG3418L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.47A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V | auf Bestellung 30032 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | MOSFETs MOSFET,N-CHANNEL | auf Bestellung 6829 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420U-7 | Diodes Inc./Zetex | Trans MOSFET N-CH 20V 5.47A Automotive 3-Pin SOT-23 T/R Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG3420U-7 Produktcode: 155587
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 5.47A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420U-7 | DIODES/ZETEX | N-MOSFET 20V 5.47A 29mΩ 740mW DMG3420U-7 Diodes TDMG3420u Anzahl je Verpackung: 500 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMG3420U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 1790 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG3420UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 168000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420UQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.47A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG3N60SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 3.7A Power dissipation: 42W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 12.6C Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG3N60SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG3N60SCT | Diodes Incorporated | Description: MOSFET N-CH 600V 3.3A TO220AB Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-220AB (Type TH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG3N60SJ3 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4406LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10.3A 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4406LSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 10.3A 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 9.9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4407SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 9.9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4407SSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4407SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4407SSS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -80A Power dissipation: 1.82W Case: SO8 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: SMD Gate charge: 41nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4413LSS | auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMG4413LSS | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4413LSS-13 | DIODES INC. | Description: DIODES INC. - DMG4413LSS-13 - Leistungs-MOSFET, p-Kanal, 30 V, 12 A, 6300 µohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 1.7W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 6300µohm | auf Bestellung 1714 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4413LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 10.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4413LSS-13 | Diodes | P-CH 30V 12A SOIC-8 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4413LSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 12A 8-Pin SOP EP T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4413LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 10.5A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 4965 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 3142 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4413LSS-13 | Diodes Incorporated | MOSFETs MOSFET,P-CHANNEL | auf Bestellung 5833 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4413LSS-13 | DIODES INC. | Description: DIODES INC. - DMG4413LSS-13 - Leistungs-MOSFET, p-Kanal, 30 V, 12 A, 6300 µohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 1.7W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 6300µohm | auf Bestellung 1714 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4435SSS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 7.3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1614 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4435SSS-13 | Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4435SSS-13 | Diodes | MOSFET P-CH 30V 7.3A 8SOIC Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4435SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4435SSS-13 | Diodes Zetex | Trans MOSFET P-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2499 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4466SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.015 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.45V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 82500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4466SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±25V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4466SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4466SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.015 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.45V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 4927 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 11484 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSS-13 | Diodes Incorporated | MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 4350 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2499 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSS-13 | Diodes | N-CH 30V 10A SOIC-8 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4466SSSL-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4466SSSL-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC On-state resistance: 33mΩ Power dissipation: 1.42W Drain current: 6A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 60A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4466SSSL-13 | Diodes Incorporated | MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD | auf Bestellung 4538 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSSL-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4466SSSL-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4466SSSL-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4468LFG | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LFG | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN3030-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LFG-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW On-state resistance: 23.5mΩ Mounting: SMD Pulsed drain current: 45.9A Power dissipation: 0.99W Gate charge: 18.85nC Polarisation: unipolar Drain current: 4.83A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Case: U-DFN3030-8 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.62A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated | MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4468LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252 On-state resistance: 25mΩ Mounting: SMD Pulsed drain current: 48A Power dissipation: 1.68W Gate charge: 18.85nC Polarisation: unipolar Drain current: 6.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: TO252 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4468LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V | auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4468LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | auf Bestellung 2125 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4468LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSS | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4496SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.016 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSS-13 | Diodes INC. | N-канальний ПТ, Udss, В = 30, Id = 10, Ptot, Вт = 1,42, Тип монт. = smd, Ciss, пФ @ Uds, В = 493,5 @ 15, Qg, нКл = 10,2 @ 10 В, Rds = 21,5 мОм @ 10 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт Anzahl je Verpackung: 2500 Stücke | verfügbar 2 Stücke: | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 5865 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSS-13 | Diodes Incorporated | MOSFETs MOSFET N-CHANNEL | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSS-13 | DIODES INC. | Description: DIODES INC. - DMG4496SSS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.016 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.42W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1025 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4496SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4496SSSQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A Automotive AEC-Q101 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4511SK4-13 | Diodes Zetex | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4511SK4-13 | Diodes Incorporated | Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4511SK4-13 | DIODES INC. | Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 35V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm Verlustleistung, p-Kanal: 1.54W Drain-Source-Spannung Vds, n-Kanal: 35V euEccn: NLR Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 4Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.54W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 1687 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4511SK4-13 | Diodes Zetex | Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4511SK4-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K | auf Bestellung 3345 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4511SK4-13 | DIODES INC. | Description: DIODES INC. - DMG4511SK4-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 35 V, 35 V, 5.3 A, 5.3 A, 0.035 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 35V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm Verlustleistung, p-Kanal: 1.54W Drain-Source-Spannung Vds, n-Kanal: 35V euEccn: NLR Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 4Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.035ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.54W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 1687 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4511SK4-13 | Diodes Incorporated | Description: MOSFET N/P-CH 35V 5.3A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | auf Bestellung 3426 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4710SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4710SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4710SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.8A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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