Produkte > AOS

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
AOS 113 X 165 X 0,635Fischer ElektronikAOS 113 X 165 X 0,635
Produkt ist nicht verfügbar
AOS 127Fischer ElektronikAluminum Oxide Wafers With Dielectric Constant 9
Produkt ist nicht verfügbar
AOS 18Fischer ElektronikAluminium Oxide Wafer
Produkt ist nicht verfügbar
AOS 218 247RICHONEdimensions: 25x21x3.0mm; with hole ?4mm; 0.3K/W; 25W/m*K; Fischer: AOS 218 247; AOS218/247; Aluminium oxide wafers for TO218/TO247 (3.0mm) TPTO218/247cer
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)
AOS 218 247Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
95+1.65 EUR
Mindestbestellmenge: 95
AOS 218 247FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; Thk: 3mm
Type of heat transfer pad: ceramic
Application: TO218; TO247
Length: 21mm
Width: 25mm
Thickness: 3mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 4mm
Pad volume resistance: 100TΩ/cm
Produkt ist nicht verfügbar
AOS 218 247FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; Thk: 3mm
Type of heat transfer pad: ceramic
Application: TO218; TO247
Length: 21mm
Width: 25mm
Thickness: 3mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 4mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOS 218 247RICHONEdimensions: 25x21x3.0mm; with hole ?4mm; 0.3K/W; 25W/m*K; Fischer: AOS 218 247; AOS218/247; Aluminium oxide wafers for TO218/TO247 (3.0mm) TPTO218/247cer
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
AOS 218 247Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 836 Stücke:
Lieferzeit 14-21 Tag (e)
AOS 218 247Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
165+0.95 EUR
Mindestbestellmenge: 165
AOS 218 247 1FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; 25W/mK
Type of heat transfer pad: ceramic
Application: TO218; TO247
Length: 21mm
Width: 25mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 4mm
Pad volume resistance: 100TΩ/cm
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.8 EUR
27+ 2.75 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
AOS 218 247 1FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; 25W/mK
Type of heat transfer pad: ceramic
Application: TO218; TO247
Length: 21mm
Width: 25mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 4mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1036 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.8 EUR
27+ 2.75 EUR
28+ 2.6 EUR
2000+ 2.59 EUR
Mindestbestellmenge: 19
AOS 218 247 1Fischer ElektronikAluminium Oxide Wafer
Produkt ist nicht verfügbar
AOS 218 247 1Fischer ElektronikAluminium Oxide Wafer
auf Bestellung 1036 Stücke:
Lieferzeit 14-21 Tag (e)
28+5.68 EUR
29+ 5.35 EUR
50+ 5.03 EUR
100+ 4.23 EUR
250+ 3.94 EUR
500+ 3.72 EUR
1000+ 3.21 EUR
Mindestbestellmenge: 28
AOS 220FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm
Application: TO220
Width: 18mm
Length: 12mm
Mounting hole diameter: 3.1mm
Thickness: 1.5mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1980 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
100+ 0.72 EUR
124+ 0.58 EUR
131+ 0.55 EUR
Mindestbestellmenge: 59
AOS 220Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
Produkt ist nicht verfügbar
AOS 220Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
146+1.08 EUR
250+ 1.01 EUR
500+ 0.94 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 146
AOS 220CHINAThickness: 1,5mm; Dimensions: 18x12mm Fischer : AOS 220 Aluminium oxide wafers for TO220 18x12mm TPTO220cer
Anzahl je Verpackung: 50 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.41 EUR
Mindestbestellmenge: 50
AOS 220FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm
Application: TO220
Width: 18mm
Length: 12mm
Mounting hole diameter: 3.1mm
Thickness: 1.5mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
100+ 0.72 EUR
124+ 0.58 EUR
131+ 0.55 EUR
Mindestbestellmenge: 59
AOS 220FischerThickness: 1,5mm; Dimensions: 18x12mm Fischer : AOS 220 Aluminium oxide wafers for TO220 18x12mm TPTO220cer
Anzahl je Verpackung: 14 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
28+1.41 EUR
Mindestbestellmenge: 28
AOS 220FischerThickness: 1,5mm; Dimensions: 18x12mm Fischer : AOS 220 Aluminium oxide wafers for TO220 18x12mm TPTO220cer
Anzahl je Verpackung: 18 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+1.64 EUR
Mindestbestellmenge: 18
AOS 220 3Fischer ElektronikAluminum Oxide Wafers
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
148+1.06 EUR
156+ 0.97 EUR
161+ 0.9 EUR
168+ 0.83 EUR
Mindestbestellmenge: 148
AOS 220 3Fischer ElektronikAluminum Oxide Wafers
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
AOS 220 3Fischer ElektronikAluminum Oxide Wafers
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
139+1.13 EUR
149+ 1.02 EUR
157+ 0.93 EUR
162+ 0.86 EUR
169+ 0.8 EUR
Mindestbestellmenge: 139
AOS 220 4FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm
Length: 12mm
Width: 18mm
Application: TO220
Mounting hole diameter: 4mm
Thickness: 1.5mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
auf Bestellung 5437 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
61+ 1.18 EUR
126+ 0.57 EUR
133+ 0.54 EUR
Mindestbestellmenge: 52
AOS 220 4Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 12892 Stücke:
Lieferzeit 14-21 Tag (e)
AOS 220 4FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm
Length: 12mm
Width: 18mm
Application: TO220
Mounting hole diameter: 4mm
Thickness: 1.5mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5437 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
61+ 1.18 EUR
126+ 0.57 EUR
133+ 0.54 EUR
Mindestbestellmenge: 52
AOS 220 4Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 5527 Stücke:
Lieferzeit 14-21 Tag (e)
77+2.05 EUR
119+ 1.28 EUR
250+ 1.19 EUR
500+ 1.11 EUR
1000+ 0.78 EUR
2500+ 0.73 EUR
5000+ 0.68 EUR
Mindestbestellmenge: 77
AOS 220 SLFISCHER ELEKTRONIKAOS220SL Heatsinks - equipment
Produkt ist nicht verfügbar
AOS 220 SLFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
Produkt ist nicht verfügbar
AOS 220-3FischerThickness: 1,6mm; Dimensions: 19,2x13,9 (hole 3,7mm); 25W/m*K; Fischer : AOS 220 3; Aluminium oxide wafers for TO220 19x13mm TPTO220cer-3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.7 EUR
Mindestbestellmenge: 20
AOS 247FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Application: TO247
Length: 20mm
Width: 23mm
Thickness: 1mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7741 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
106+ 0.68 EUR
148+ 0.49 EUR
157+ 0.46 EUR
Mindestbestellmenge: 64
AOS 247Fischerdimensions: 23x20x1,0mm, without a hole; 0,3 K/W; 25 W/m*K; Fischer: AOS 247; AOS247; Aluminium oxide wafers for TO247 (without a hole) TPTO247cer pelna
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.31 EUR
Mindestbestellmenge: 30
AOS 247Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
Produkt ist nicht verfügbar
AOS 247Fischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 9056 Stücke:
Lieferzeit 14-21 Tag (e)
176+0.89 EUR
250+ 0.79 EUR
500+ 0.73 EUR
1000+ 0.69 EUR
2500+ 0.64 EUR
5000+ 0.6 EUR
Mindestbestellmenge: 176
AOS 247FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Application: TO247
Length: 20mm
Width: 23mm
Thickness: 1mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
auf Bestellung 7741 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
106+ 0.68 EUR
148+ 0.49 EUR
157+ 0.46 EUR
Mindestbestellmenge: 64
AOS 247Fischerdimensions: 23x20x1,0mm, without a hole; 0,3 K/W; 25 W/m*K; Fischer: AOS 247; AOS247; Aluminium oxide wafers for TO247 (without a hole) TPTO247cer pelna
Anzahl je Verpackung: 10 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.31 EUR
Mindestbestellmenge: 30
AOS 3FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3; L: 26.3mm; W: 40mm; Thk: 2.9mm
Type of heat transfer pad: ceramic
Application: TO3
Length: 26.3mm
Width: 40mm
Thickness: 2.9mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 4.2mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.79 EUR
30+ 2.45 EUR
43+ 1.67 EUR
46+ 1.59 EUR
Mindestbestellmenge: 26
AOS 3Fischer ElektronikAluminium Oxide Wafer
Produkt ist nicht verfügbar
AOS 3FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3; L: 26.3mm; W: 40mm; Thk: 2.9mm
Type of heat transfer pad: ceramic
Application: TO3
Length: 26.3mm
Width: 40mm
Thickness: 2.9mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 4.2mm
Pad volume resistance: 100TΩ/cm
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
30+ 2.45 EUR
43+ 1.67 EUR
46+ 1.59 EUR
Mindestbestellmenge: 26
AOS 3Fischerdimensions: 40,6x26,3x2,9mm; with holes 2=?4.8mm and 2=?4.8x4.2mm; 0,3K/W; 25W/m*K; Fischer: AOS 3; Aluminium oxide wafers for TO3 40,6x26,3mm TPTO3cer
Anzahl je Verpackung: 4 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
12+3.13 EUR
Mindestbestellmenge: 12
AOS 3 PFISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm
Type of heat transfer pad: ceramic
Application: TO3P
Length: 17.5mm
Width: 20.5mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.1mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
75+ 0.96 EUR
81+ 0.89 EUR
102+ 0.71 EUR
107+ 0.67 EUR
Mindestbestellmenge: 55
AOS 3 PFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
AOS 3 PFISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm
Type of heat transfer pad: ceramic
Application: TO3P
Length: 17.5mm
Width: 20.5mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.1mm
Pad volume resistance: 100TΩ/cm
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
75+ 0.96 EUR
81+ 0.89 EUR
102+ 0.71 EUR
107+ 0.67 EUR
Mindestbestellmenge: 55
AOS 3 P 2Fischer ElektronikAluminium Oxide Wafers With Thickness 1.5mm
Produkt ist nicht verfügbar
AOS 3 P 2FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3P; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Type of heat transfer pad: ceramic
Application: TO3P
Length: 20mm
Width: 23mm
Thickness: 1mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.6mm
Pad volume resistance: 100TΩ/cm
auf Bestellung 1537 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.37 EUR
36+ 1.99 EUR
37+ 1.96 EUR
46+ 1.57 EUR
49+ 1.49 EUR
Mindestbestellmenge: 31
AOS 3 P 2FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3P; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Type of heat transfer pad: ceramic
Application: TO3P
Length: 20mm
Width: 23mm
Thickness: 1mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.6mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1537 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.37 EUR
36+ 1.99 EUR
37+ 1.96 EUR
46+ 1.57 EUR
49+ 1.49 EUR
Mindestbestellmenge: 31
AOS 3 P SLFischerdimensions: 20,5x17,5x1,5mm, with hole ?3,1mm; 0,3 K/W; 25W/m*K; Fischer: AOS 3 P SL; Aluminium oxide wafers for TOP3 20x17mm TPTO3pcer SL
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.31 EUR
Mindestbestellmenge: 30
AOS 3 P SLFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 2839 Stücke:
Lieferzeit 14-21 Tag (e)
195+0.8 EUR
Mindestbestellmenge: 195
AOS 3 P SLFISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm
Type of heat transfer pad: ceramic
Application: TO3P
Length: 17.5mm
Width: 20.5mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.1mm
Pad volume resistance: 100TΩ/cm
auf Bestellung 1722 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
61+ 1.19 EUR
66+ 1.09 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 52
AOS 3 P SLFISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm
Type of heat transfer pad: ceramic
Application: TO3P
Length: 17.5mm
Width: 20.5mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.1mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1722 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
61+ 1.19 EUR
66+ 1.09 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 52
AOS 3 P SLFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
Produkt ist nicht verfügbar
AOS 32Fischer ElektronikAluminium Oxide Wafer
Produkt ist nicht verfügbar
AOS 32FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO126,TO32; L: 8mm; W: 11mm; Thk: 1.5mm
Type of heat transfer pad: ceramic
Application: TO32; TO126
Length: 8mm
Width: 11mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.1mm
Pad volume resistance: 100TΩ/cm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)
48+1.49 EUR
75+ 0.96 EUR
87+ 0.83 EUR
123+ 0.58 EUR
130+ 0.55 EUR
Mindestbestellmenge: 48
AOS 32FISCHER ELEKTRONIKCategory: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO126,TO32; L: 8mm; W: 11mm; Thk: 1.5mm
Type of heat transfer pad: ceramic
Application: TO32; TO126
Length: 8mm
Width: 11mm
Thickness: 1.5mm
Thermal conductivity: 25W/mK
Electrical insulation: 10kV/mm
Mounting hole diameter: 3.1mm
Pad volume resistance: 100TΩ/cm
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.49 EUR
75+ 0.96 EUR
87+ 0.83 EUR
123+ 0.58 EUR
130+ 0.55 EUR
Mindestbestellmenge: 48
AOS 32 : ASO32FISCHER ELEKTRONIK GmbH und Co. KGAOS32 Теплопроводящая прокладка керамическая, TO126, L=11мм, W=8мм, монт. отверствие 3,1мм
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AOS 3P2Fischerdimensions: 23x20x1mm; with hole ?3,6mm; 0,3K/W; 25W/m*K; Fischer: AOS 3 P 2; Aluminium oxide wafers for TOP3 23x20mm TPTO3pcer-2
Anzahl je Verpackung: 4 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
12+2.99 EUR
Mindestbestellmenge: 12
AOS 5Fischer ElektronikAluminium Oxide Wafers With Thickness 1.5mm
Produkt ist nicht verfügbar
AOS 66Fischer ElektronikAluminium Oxide Wafers With Thickness 1.5 Mm
Produkt ist nicht verfügbar
AOS 93Fischer ElektronikAluminium Oxide Wafers With Thickness 1.5mm
Produkt ist nicht verfügbar
AOS SL (53X24X1,5MM) W001119Fischer ElektronikALUMINIUM OXIDE WAFER
Produkt ist nicht verfügbar
AOS SL (53X24X1MM) W001119Fischer ElektronikALUMINIUM OXIDE WAFER
Produkt ist nicht verfügbar
AOS SL (72,1X24X1,5MM) W001121Fischer ElektronikALUMINIUM OXIDE WAFER
Produkt ist nicht verfügbar
AOS SL (72,1X24X1MM) W001121Fischer ElektronikALUMINIUM OXIDE WAFER
Produkt ist nicht verfügbar
AOS SPECIAL 33X29X1.27Fischer ElektronikAluminium Oxide Wafer
Produkt ist nicht verfügbar
AOS-SPECIALFischer ElektronikAOS-SPECIAL
Produkt ist nicht verfügbar
AOS-SPECIAL W006836Fischer Elektronik44 X 48 X 1,5 mm. 3 holes 4,7 mm. 1 hole 3,8 mm.
Produkt ist nicht verfügbar
AOS218/247RICHONEDimensions: 25x21x1.5mm; with hole ?4mm; 0.3K/W; 25W/m*K; (Fischer : AOS 218 247-1 Thickness 1.5mm) Aluminium oxide wafers for TO218/TO247 TPTO218/247cer-1
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
AOS218/247 Dichtung keramische 3mm 25x21 TO218/247
Produktcode: 29478		FisherIsoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische, 3mm 25x21mm, für ТО-218, ТО-247, 25W/mК, 10kV/mm
Größe: 21х25х3mm + Loch.4,0mm, fuer Gehause TO-218, TO-247
Матеріал: Кераміка
auf Bestellung 371 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 110 Stück:
1+0.76 EUR
AOS218/247/1 Dichtung keramische 1,5mm 25x21
Produktcode: 53560		FisherIsoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische für ТО-218, ТО-247; 1,5mm, 25x21mm, 25W/mК, 10kV/mm
Größe: 1,5mm, 25x21mm, fuer Gehause ТО-218, ТО-247
Матеріал: Кераміка
Produkt ist nicht verfügbar
AOS218/247 Прокладка керамическая 1мм 25x20 TO218/247
Produktcode: 131173		FisherIsoliermaterialien
Gruppe: Прокладка теплопровідна
Beschreibung: Прокладка теплопровідна керамічна для ТО-218, ТО-247; 1мм, 25х21мм, 25Вт/мК, 10кВ/мм
Größe: 1мм, 25х21мм, під корпус ТО-218, ТО-247
Матеріал: Кераміка
Produkt ist nicht verfügbar
AOS218/247; (25х21х3,0мм); оксид алюминия; для TO218/TO247; 10kV/mm; Теплопров.:25Вт/м*К; FISCHER
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
AOS220Fischer ElectronikПрокладка керамічна до ТО220; Розм = 12 x 18 x 1,5 мм; Теплопров. = 25 Вт/мК; Ел. ізол. = 10 кВ/мм; 12x18x1.5mm
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
9+0.8 EUR
10+ 0.69 EUR
100+ 0.6 EUR
Mindestbestellmenge: 9
AOS220 keramische Dichtung TO220; L:12mm; W:18mm; D:1.5mm
Produktcode: 42354		FisherIsoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische für ТО-220, L:12mm; W:18mm; D:1.5mm, 25W/mК, 10kV/mm
Größe: 12х18х1,5mm + Loch.3,1mm, fuer Gehause TO-220
Матеріал: Кераміка
auf Bestellung 75 Stück:
Lieferzeit 21-28 Tag (e)
1+0.43 EUR
AOS220 Керамическая прокладка TO220; L:19,2mm; W:13,9mm;
Produktcode: 165257		FisherIsoliermaterialien
Gruppe: Прокладка теплопровідна
Beschreibung: Прокладка теплопровідна керамічна для ТО-220, L:19,2mm; W:13,9mm; 25Вт/мК, електрична ізоляція 10кВ/мм
Größe: 19,2х13,9х1мм + відв.3,7мм, під корпус TO-220
Матеріал: Кераміка
auf Bestellung 99 Stück:
Lieferzeit 21-28 Tag (e)
AOS220-4FischerThickness: 1,5mm; Dimensions: 18x12mm (hole 4mm); Fischer AOS 220 4; AOS220/4; Aluminium oxide wafers for TO220 TPTO220cer-4
Anzahl je Verpackung: 10 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.43 EUR
Mindestbestellmenge: 30
AOS220/4 Прокладка теплопроводящая: керамическая: TO220: L:12мм: W:18мм. Диаметр монтажного отверстия 4 мм
Produktcode: 112401		Isoliermaterialien
Produkt ist nicht verfügbar
AOS220/4; (18х12х1.5 мм); оксид алюминия; ТО-220; 10kV/mm; Теплопров.:25Вт/м*К; FISCHER
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
AOS220SLFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
67+2.34 EUR
74+ 2.04 EUR
79+ 1.85 EUR
81+ 1.74 EUR
100+ 1.59 EUR
Mindestbestellmenge: 67
AOS220SLFischerThickness: 4,5mm; Dimensions: 18x14mm (hole 3,5mm); Fischer : AOS 220 SL; Aluminium oxide wafers for TO220 18x14mm TPTO220cer SL
Anzahl je Verpackung: 5 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
15+2.17 EUR
Mindestbestellmenge: 15
AOS220SLFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
82+1.92 EUR
87+ 1.74 EUR
89+ 1.64 EUR
100+ 1.5 EUR
Mindestbestellmenge: 82
AOS247 Dichtung keramische TO-247
Produktcode: 35986		FisherIsoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische für ТО-247, 25W/mК, 10kV/mm
Größe: 20х23х1mm, fuer Gehause TO-247
Матеріал: Кераміка
auf Bestellung 77 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 100 Stück:
100 Stück - erwartet 30.04.2024
1+0.55 EUR
AOS296A001Alpha & Omega SemiconductorAOD296A_001
Produkt ist nicht verfügbar
AOS32FischerDimensions: 11x8x1.5mm; with a hole ?3.1mm; 0.3K/W; 25W/m*K; Fischer: AOS 32; Aluminium oxide wafers for SOT32 TPSOT32cer
Anzahl je Verpackung: 10 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.74 EUR
Mindestbestellmenge: 20
AOS32 Dichtung keramische
Produktcode: 75513		Isoliermaterialien
Produkt ist nicht verfügbar
AOS322N-BIDECIndustrial Panel Mount Indicators / Switch Indicators TWS
Produkt ist nicht verfügbar
AOS322N-BIDECDescription: TWS
Packaging: Bulk
Produkt ist nicht verfügbar
AOS322N-RIDECDescription: (TWS)
Packaging: Bulk
Produkt ist nicht verfügbar
AOS322N-RIDECIndustrial Panel Mount Indicators / Switch Indicators (TWS)
Produkt ist nicht verfügbar
AOS3PFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 1334 Stücke:
Lieferzeit 14-21 Tag (e)
180+0.87 EUR
189+ 0.8 EUR
196+ 0.74 EUR
198+ 0.7 EUR
204+ 0.66 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 180
AOS3PFischerdimensions: 20,5x17,5x1,5mm; with hole ?3,1mm (cut corners); 0,3K/W; 25W/m*K; Fischer : AOS 3 P; Aluminium oxide wafers for TO3P 20,5x17,5mm TPTO3pcer
Anzahl je Verpackung: 5 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.42 EUR
Mindestbestellmenge: 25
AOS3PFischer ElektronikThrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide
auf Bestellung 1332 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.75 EUR
217+ 0.7 EUR
220+ 0.66 EUR
225+ 0.62 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 209
AOS3P Dichtung keramische fur TO3P; L:17.5mm; W:20.5mm
Produktcode: 41939		FisherIsoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische für ТО-3Р, L:17.5mm; W:20.5mm, 25W/mК, 10kV/mm
Größe: 17,5х20,5х1,5mm + Loch.3,1mm, fuer Gehause TO-3P
Матеріал: Кераміка
Produkt ist nicht verfügbar
AOS3P2 прокладка керамическая для TO3P; L:20mm; W:23mm; D:1mm
Produktcode: 112773		Gehäuse, Halter, Montage- und Installationselemente > Zubehör für Gehäuse
Produkt ist nicht verfügbar
AOSB11355207+
auf Bestellung 2700 Stücke:
Lieferzeit 21-28 Tag (e)
AOSD21307Alpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.81 EUR
Mindestbestellmenge: 3000
AOSD21307Alpha & Omega Semiconductor30V Dual P-Channel MOSFET
Produkt ist nicht verfügbar
AOSD21307Alpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 8382 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
15+ 1.85 EUR
100+ 1.28 EUR
500+ 1.07 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
AOSD21311CAlpha & Omega SemiconductorTrans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSD21311CAlpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 54000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
AOSD21311CAlpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 54610 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.36 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
AOSD21313CAlpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 15184 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
15+ 1.77 EUR
100+ 1.22 EUR
500+ 1.02 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 13
AOSD21313CAlpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.77 EUR
6000+ 0.73 EUR
9000+ 0.68 EUR
Mindestbestellmenge: 3000
AOSD26313CALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
AOSD26313CAlpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 8-SOIC
Produkt ist nicht verfügbar
AOSD26313CALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSD26313CAlpha & Omega Semiconductor30V Complementary MOSFET
Produkt ist nicht verfügbar
AOSD32334CAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 138000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
75000+ 0.27 EUR
Mindestbestellmenge: 3000
AOSD32334CAlpha & Omega Semiconductor30V Dual N-Channel MOSFET
Produkt ist nicht verfügbar
AOSD32334CAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 140040 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
27+ 0.97 EUR
100+ 0.58 EUR
500+ 0.54 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 21
AOSD32338CAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
AOSD62666EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSD62666EAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.11 EUR
6000+ 1.05 EUR
9000+ 1 EUR
Mindestbestellmenge: 3000
AOSD62666EALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1357 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
132+ 0.54 EUR
152+ 0.47 EUR
179+ 0.4 EUR
186+ 0.39 EUR
Mindestbestellmenge: 72
AOSD62666EAlpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 14373 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
12+ 2.19 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 10
AOSD62666EAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSD62666EALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
132+ 0.54 EUR
152+ 0.47 EUR
179+ 0.4 EUR
186+ 0.39 EUR
Mindestbestellmenge: 72
AOSGL.SET.1SRA Soldering ProductsDescription: HOT AIR REWORK SINGLE NOZZLE SET
Packaging: Box
Diameter: Assorted
Length: Assorted
Width: Assorted
Height: Assorted
Tip Shape: Nozzle
Tip Type: Rework (Hot Air)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
1+88.4 EUR
AOSGL.SET.2SRA Soldering ProductsDescription: HOT AIR REWORK SINGLE NOZZLE SET
Packaging: Box
Length: Assorted
Width: Assorted
Height: Assorted
Tip Shape: Nozzle
Tip Type: Rework (Hot Air)
Part Status: Active
Tip Chip Size: Single
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
1+130.65 EUR
AOSGL.SET.3SRA Soldering ProductsDescription: HOT AIR REWORK SINGLE NOZZLE SET
Produkt ist nicht verfügbar
AOSN21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
AOSN21319CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
AOSN21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 15589 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
31+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
AOSN32338CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 3.7A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Produkt ist nicht verfügbar
AOSOP.SETSRA Soldering ProductsDescription: SOP NOZZLE SET FOR HOT AIR REWOR
Packaging: Box
Length: Assorted
Width: Assorted
Height: Assorted
Tip Shape: Nozzle
Tip Type: Rework (Hot Air)
Tip Chip Size: SOP
Produkt ist nicht verfügbar
AOSP1800SRA Soldering ProductsDescription: MINI SOLDER POT SP1800, 120 WATT
Packaging: Box
Features: Ceramic Heater
Voltage - Input: 110V
Temperature Range: 392°F ~ 752°F (200°C ~ 400°C)
Type: Solder Pot
Control/Display Type: Analog
Base Unit: SP1800
Plug Type: Included, Not Specified
Wattage: 120W
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
1+276.07 EUR
AOSP2000+SRA Soldering ProductsDescription: LEAD FREE SOLDER POT SP2000+ WIT
Features: Ceramic Heater, ESD Safe
Packaging: Box
Voltage - Input: 110V
Temperature Range: 392°F ~ 896°F (200°C ~ 480°C)
Type: Solder Pot
Control/Display Type: Digital
Base Unit: SP2000+
Plug Type: Included, Not Specified
Wattage: 600W
Part Status: Obsolete
Produkt ist nicht verfügbar
AOSP21307Alpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
AOSP21307ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
auf Bestellung 1109 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
167+ 0.43 EUR
188+ 0.38 EUR
217+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 76
AOSP21307Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Produkt ist nicht verfügbar
AOSP21307Alpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
AOSP21307ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1109 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
167+ 0.43 EUR
188+ 0.38 EUR
217+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 76
AOSP21311CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar
AOSP21313CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 11650 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
AOSP21313CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
AOSP21313CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.56 EUR
6000+ 0.53 EUR
9000+ 0.49 EUR
Mindestbestellmenge: 3000
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.23 EUR
6000+ 0.21 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
AOSP21321ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
221+0.32 EUR
288+ 0.25 EUR
376+ 0.19 EUR
397+ 0.18 EUR
Mindestbestellmenge: 221
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.25 EUR
6000+ 0.23 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP21321ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 519 Stücke:
Lieferzeit 7-14 Tag (e)
221+0.32 EUR
288+ 0.25 EUR
376+ 0.19 EUR
397+ 0.18 EUR
Mindestbestellmenge: 221
AOSP21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 37088 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.2 EUR
Mindestbestellmenge: 3000
AOSP21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
6000+ 0.37 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
AOSP21357ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1113 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
179+ 0.4 EUR
204+ 0.35 EUR
235+ 0.3 EUR
248+ 0.29 EUR
Mindestbestellmenge: 76
AOSP21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Produkt ist nicht verfügbar
AOSP21357ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
auf Bestellung 1113 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
179+ 0.4 EUR
204+ 0.35 EUR
235+ 0.3 EUR
248+ 0.29 EUR
Mindestbestellmenge: 76
AOSP21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 2983 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.78 EUR
12+ 2.28 EUR
100+ 1.77 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 10
AOSP21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP32314ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOSP32314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14.5A 8SOIC
Produkt ist nicht verfügbar
AOSP32314Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP32314Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP32314ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOSP32314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14.5A 8SOIC
auf Bestellung 929 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.74 EUR
17+ 1.54 EUR
100+ 1.18 EUR
500+ 0.94 EUR
Mindestbestellmenge: 15
AOSP32320CAlpha & Omega Semiconductor30V N-Channel MOSFET
Produkt ist nicht verfügbar
AOSP32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 17603 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.07 EUR
100+ 0.74 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
AOSP32320CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSP32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.42 EUR
6000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 3000
AOSP32320CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Produkt ist nicht verfügbar
AOSP32368Alpha & Omega Semiconductor30V N-Channel MOSFET
Produkt ist nicht verfügbar
AOSP32368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 6364 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.38 EUR
22+ 1.19 EUR
100+ 0.82 EUR
500+ 0.64 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 19
AOSP32368ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 12A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Produkt ist nicht verfügbar
AOSP32368Alpha & Omega Semiconductor30V N-Channel MOSFET
Produkt ist nicht verfügbar
AOSP32368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 16A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.47 EUR
Mindestbestellmenge: 3000
AOSP32368ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 12A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSP36326CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Gate-source voltage: ±20V
auf Bestellung 1505 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
288+ 0.25 EUR
396+ 0.18 EUR
419+ 0.17 EUR
Mindestbestellmenge: 209
AOSP36326CAlpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
AOSP36326CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1505 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
288+ 0.25 EUR
396+ 0.18 EUR
419+ 0.17 EUR
Mindestbestellmenge: 209
AOSP36326CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
auf Bestellung 81485 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
28+ 0.93 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 24
AOSP36326CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.37 EUR
6000+ 0.35 EUR
9000+ 0.32 EUR
75000+ 0.31 EUR
Mindestbestellmenge: 3000
AOSP4000SRA Soldering ProductsDescription: MINI SOLDER POT SP4000, 160 WATT
Features: Ceramic Heater
Packaging: Box
Voltage - Input: 110V
Temperature Range: 392°F ~ 752°F (200°C ~ 400°C)
Type: Solder Pot
Control/Display Type: Analog
Base Unit: SP4000
Plug Type: Included, Not Specified
Wattage: 160W
Produkt ist nicht verfügbar
AOSP62626EAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 30 V
Produkt ist nicht verfügbar
AOSP66406ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSP66406ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
AOSP66406Alpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
AOSP66920Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.25 EUR
6000+ 1.19 EUR
9000+ 1.13 EUR
Mindestbestellmenge: 3000
AOSP66920ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
AOSP66920Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AOSP66920ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSP66920Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 46160 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.02 EUR
11+ 2.47 EUR
100+ 1.92 EUR
500+ 1.63 EUR
1000+ 1.33 EUR
Mindestbestellmenge: 9
AOSP66923Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 11279 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
AOSP66923Alpha & Omega Semiconductor100V N-Channel MOSFET
Produkt ist nicht verfügbar
AOSP66923ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOSP66923Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.91 EUR
6000+ 0.87 EUR
9000+ 0.83 EUR
Mindestbestellmenge: 3000
AOSP66923Alpha & Omega Semiconductor100V N-Channel MOSFET
Produkt ist nicht verfügbar
AOSP66923ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Produkt ist nicht verfügbar
AOSP66925Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
AOSS21115CAlpha & Omega SemiconductorTrans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS21115CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 23424 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
33+ 0.81 EUR
100+ 0.41 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
AOSS21115CAlpha & Omega SemiconductorTrans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS21115CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
auf Bestellung 1045 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
780+ 0.092 EUR
880+ 0.082 EUR
1015+ 0.071 EUR
1045+ 0.069 EUR
Mindestbestellmenge: 380
AOSS21115CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.25 EUR
9000+ 0.22 EUR
Mindestbestellmenge: 3000
AOSS21115CAlpha & Omega SemiconductorTrans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS21115CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1045 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
780+ 0.092 EUR
880+ 0.082 EUR
1015+ 0.071 EUR
1045+ 0.069 EUR
Mindestbestellmenge: 380
AOSS21311CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
AOSS21311CAlpha & Omega SemiconductorTrans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.57 EUR
6000+ 0.45 EUR
Mindestbestellmenge: 3000
AOSS21311CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 1580 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
AOSS21311CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
AOSS21311CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 4.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar
AOSS21311CAlpha & Omega SemiconductorTrans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS21311CAlpha & Omega SemiconductorTrans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.57 EUR
6000+ 0.45 EUR
Mindestbestellmenge: 3000
AOSS21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.2 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
AOSS21319CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
AOSS21319CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
AOSS21319CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
AOSS21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 36304 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 29
AOSS21319CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
AOSS32136CAlpha & Omega Semiconductor20V N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AOSS32136CAlpha & Omega Semiconductor20V N-Channel MOSFET
Produkt ist nicht verfügbar
AOSS32136CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
auf Bestellung 213000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.24 EUR
9000+ 0.21 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
AOSS32136CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 38A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 14nC
auf Bestellung 1027 Stücke:
Lieferzeit 14-21 Tag (e)
353+0.2 EUR
575+ 0.12 EUR
633+ 0.11 EUR
794+ 0.09 EUR
848+ 0.084 EUR
Mindestbestellmenge: 353
AOSS32136CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 38A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 14nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1027 Stücke:
Lieferzeit 7-14 Tag (e)
353+0.2 EUR
575+ 0.12 EUR
633+ 0.11 EUR
794+ 0.09 EUR
848+ 0.084 EUR
Mindestbestellmenge: 353
AOSS32136CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 6.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
auf Bestellung 216166 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 24
AOSS32334CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 11276 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
38+ 0.7 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
AOSS32334CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 20nC
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1815 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
545+ 0.13 EUR
605+ 0.12 EUR
795+ 0.09 EUR
835+ 0.086 EUR
Mindestbestellmenge: 380
AOSS32334CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 6.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
AOSS32334CAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS32334CAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS32334CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 20nC
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
545+ 0.13 EUR
605+ 0.12 EUR
795+ 0.09 EUR
835+ 0.086 EUR
Mindestbestellmenge: 380
AOSS32338CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 38782 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
33+ 0.8 EUR
100+ 0.41 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 23
AOSS32338CAlpha & Omega Semiconductor30V N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AOSS32338CAlpha & Omega Semiconductor30V N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
AOSS32338CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 16nC
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
680+ 0.11 EUR
755+ 0.095 EUR
930+ 0.077 EUR
985+ 0.073 EUR
Mindestbestellmenge: 315
AOSS32338CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
AOSS32338CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 16nC
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1520 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
680+ 0.11 EUR
755+ 0.095 EUR
930+ 0.077 EUR
985+ 0.073 EUR
Mindestbestellmenge: 315
AOSS32338CAlpha & Omega Semiconductor30V N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
AOSS62934Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
auf Bestellung 468112 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
33+ 0.81 EUR
100+ 0.48 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
AOSS62934ALPHA & OMEGA SEMICONDUCTORAOSS62934 SMD N channel transistors
auf Bestellung 5265 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
569+ 0.13 EUR
596+ 0.12 EUR
Mindestbestellmenge: 358
AOSS62934Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSS62934Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
auf Bestellung 468000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.24 EUR
75000+ 0.22 EUR
Mindestbestellmenge: 3000
AOSS62934Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
AOSX21319CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 2.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Produkt ist nicht verfügbar
AOSX32128Alpha & Omega Semiconductor Inc.Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Produkt ist nicht verfügbar