Produkte > YJL

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
YJL02N10AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL02N10AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL02N10A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL02N10A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 100V 2A SOT-23-3L
Produkt ist nicht verfügbar
YJL03G10AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
Mindestbestellmenge: 65
YJL03G10AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
100+ 0.72 EUR
250+ 0.29 EUR
290+ 0.24 EUR
796+ 0.09 EUR
3000+ 0.054 EUR
Mindestbestellmenge: 65
YJL03G10A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 100V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03G10A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 100V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N04AYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.078 EUR
15000+ 0.073 EUR
30000+ 0.068 EUR
60000+ 0.065 EUR
120000+ 0.057 EUR
300000+ 0.055 EUR
Mindestbestellmenge: 3000
YJL03N04AYangjie Electronic TechnologyYJL03N04A
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.037 EUR
Mindestbestellmenge: 6000
YJL03N06AYangjie Electronic TechnologyYJL03N06A
auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
3572+0.044 EUR
Mindestbestellmenge: 3572
YJL03N06AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
auf Bestellung 858 Stücke:
Lieferzeit 21-28 Tag (e)
36+0.73 EUR
45+ 0.59 EUR
100+ 0.31 EUR
500+ 0.2 EUR
Mindestbestellmenge: 36
YJL03N06AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
1355+ 0.053 EUR
1765+ 0.041 EUR
1860+ 0.038 EUR
Mindestbestellmenge: 600
YJL03N06AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 2.4A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.4A
Pulsed drain current: 12A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)
600+0.12 EUR
1355+ 0.053 EUR
1765+ 0.041 EUR
1860+ 0.038 EUR
Mindestbestellmenge: 600
YJL03N06A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
auf Bestellung 720 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
29+ 0.92 EUR
100+ 0.52 EUR
500+ 0.35 EUR
Mindestbestellmenge: 22
YJL03N06A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06AQYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.17 EUR
15000+ 0.16 EUR
30000+ 0.15 EUR
60000+ 0.14 EUR
120000+ 0.12 EUR
300000+ 0.11 EUR
Mindestbestellmenge: 3000
YJL03N06AQYangjie Electronic TechnologyYJL03N06AQ
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.077 EUR
Mindestbestellmenge: 3000
YJL03N06BYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06BYangjie TechnologyDescription: SOT-23 N 60V 3A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.088 EUR
15000+ 0.083 EUR
30000+ 0.078 EUR
60000+ 0.073 EUR
120000+ 0.066 EUR
300000+ 0.061 EUR
Mindestbestellmenge: 3000
YJL03N06BYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Produkt ist nicht verfügbar
YJL03N06B-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL03N06B-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 60V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 40V 5A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 40V 5A SOT-23-3L
Produkt ist nicht verfügbar
YJL05N04AQYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.13 EUR
15000+ 0.12 EUR
30000+ 0.11 EUR
120000+ 0.095 EUR
300000+ 0.088 EUR
Mindestbestellmenge: 3000
YJL05N06ALYangjie TechnologyDescription: SOT-23 N 60V 5A Transistors FET
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.2 EUR
15000+ 0.19 EUR
30000+ 0.17 EUR
60000+ 0.16 EUR
120000+ 0.15 EUR
300000+ 0.14 EUR
Mindestbestellmenge: 3000
YJL2101WYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2101WYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2101W-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-323
Produkt ist nicht verfügbar
YJL2101W-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-323
Produkt ist nicht verfügbar
YJL2102WYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
YJL2102WYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Produkt ist nicht verfügbar
YJL2102W-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-323
Produkt ist nicht verfügbar
YJL2102W-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-323
Produkt ist nicht verfügbar
YJL2300AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1130+0.064 EUR
1750+ 0.041 EUR
1970+ 0.036 EUR
2400+ 0.03 EUR
2540+ 0.028 EUR
Mindestbestellmenge: 1130
YJL2300AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
1130+0.064 EUR
1750+ 0.041 EUR
1970+ 0.036 EUR
2400+ 0.03 EUR
2540+ 0.028 EUR
Mindestbestellmenge: 1130
YJL2301CYangzhou Yangjie Electronic Technology Co., Ltd.MOSFET SOT-23 P Channel 20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
YJL2301CYangjie Electronic TechnologyP-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.037 EUR
Mindestbestellmenge: 6000
YJL2301CYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
auf Bestellung 490 Stücke:
Lieferzeit 21-28 Tag (e)
36+0.73 EUR
45+ 0.59 EUR
100+ 0.31 EUR
Mindestbestellmenge: 36
YJL2301CYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2301CYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
Produkt ist nicht verfügbar
YJL2301CYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301C-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 3.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL2301C-F2-0000HFYYP-Channel MOSFET -3A -20V 120m? Zamiennik dla: IRLML6402 , SKML6402 IRLML6402 Yangjie TIRLML6402 c
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
500+0.089 EUR
Mindestbestellmenge: 500
YJL2301C-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 3.4A SOT-23-3L
auf Bestellung 1292 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
43+ 0.61 EUR
100+ 0.33 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
YJL2301CQYangjie Electronic TechnologyYJL2301CQ
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.07 EUR
Mindestbestellmenge: 3000
YJL2301CQYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.15 EUR
15000+ 0.14 EUR
60000+ 0.13 EUR
120000+ 0.11 EUR
Mindestbestellmenge: 3000
YJL2301DYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
YJL2301DYangjie Electronic TechnologyP-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.042 EUR
Mindestbestellmenge: 6000
YJL2301DYangjie TechnologyDescription: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.086 EUR
15000+ 0.083 EUR
30000+ 0.078 EUR
60000+ 0.073 EUR
120000+ 0.065 EUR
300000+ 0.06 EUR
600000+ 0.049 EUR
Mindestbestellmenge: 3000
YJL2301DYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
100+ 0.72 EUR
460+ 0.16 EUR
1220+ 0.059 EUR
Mindestbestellmenge: 20
YJL2301FYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
auf Bestellung 275 Stücke:
Lieferzeit 21-28 Tag (e)
50+0.52 EUR
56+ 0.47 EUR
103+ 0.25 EUR
Mindestbestellmenge: 50
YJL2301FYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301FYangjie Electronic TechnologyP-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.028 EUR
Mindestbestellmenge: 6000
YJL2301FYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Produkt ist nicht verfügbar
YJL2301FYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
YJL2301F-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
43+ 0.61 EUR
100+ 0.33 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
YJL2301F-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
YJL2301GYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2301GYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2301GYangjie Electronic TechnologyP-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.028 EUR
Mindestbestellmenge: 6000
YJL2301GYangjie TechnologyDescription: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.062 EUR
15000+ 0.06 EUR
30000+ 0.055 EUR
60000+ 0.052 EUR
120000+ 0.047 EUR
300000+ 0.044 EUR
Mindestbestellmenge: 3000
YJL2301GWYangjie Electronic TechnologyYJL2301GW
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.033 EUR
Mindestbestellmenge: 6000
YJL2301NYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.057 EUR
15000+ 0.055 EUR
30000+ 0.049 EUR
60000+ 0.047 EUR
120000+ 0.042 EUR
300000+ 0.039 EUR
Mindestbestellmenge: 3000
YJL2301NYangjie Electronic TechnologyP-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.026 EUR
Mindestbestellmenge: 6000
YJL2302AYangjie TechnologyDescription: SOT-23 N 20V 4.3A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.07 EUR
15000+ 0.065 EUR
30000+ 0.062 EUR
60000+ 0.057 EUR
120000+ 0.052 EUR
300000+ 0.049 EUR
Mindestbestellmenge: 3000
YJL2302AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2302AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Produkt ist nicht verfügbar
YJL2302AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2302AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Produkt ist nicht verfügbar
YJL2302A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 4.3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2302A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 4.3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2302BYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Produkt ist nicht verfügbar
YJL2302BYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Produkt ist nicht verfügbar
YJL2302B-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2302B-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 3A SOT-23-3L
Produkt ist nicht verfügbar
YJL2303A-F2-0000HFYYTransistor N-Channel MOSFET; -30V; 20V; 85mOhm; 3A; 1,1W; -55°C ~ 150°C; YJL2303A-F2-0000HF TYJL2303A-F2-0000HF
Anzahl je Verpackung: 100 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
300+0.12 EUR
Mindestbestellmenge: 300
YJL2304AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2304AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2304AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304A-F2-0100HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2304A-F2-0100HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305AYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2305AYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.5A
Pulsed drain current: -23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL2305A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 15V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 15V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305BYANGJIE TECHNOLOGYYJL2305B-YAN SMD P channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.72 EUR
420+ 0.17 EUR
1160+ 0.061 EUR
12000+ 0.04 EUR
Mindestbestellmenge: 100
YJL2305BYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
auf Bestellung 1137 Stücke:
Lieferzeit 21-28 Tag (e)
33+0.81 EUR
48+ 0.54 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 33
YJL2305BYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Produkt ist nicht verfügbar
YJL2305B-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL2305B-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.4A SOT-23-3L
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
43+ 0.62 EUR
100+ 0.33 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
YJL2305B-F2-0000HFYYP-CH MOSFET 20V 5.4A SOT-23-3L YJL2305B-F2-0000HF TYJL2305B-F2-0000HF
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3700 Stücke:
Lieferzeit 7-14 Tag (e)
3000+0.083 EUR
Mindestbestellmenge: 3000
YJL2312AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
YJL2312AYangjie TechnologyDescription: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.091 EUR
15000+ 0.086 EUR
30000+ 0.081 EUR
60000+ 0.075 EUR
120000+ 0.068 EUR
300000+ 0.065 EUR
Mindestbestellmenge: 3000
YJL2312AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL2312A-F2-0100HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 6.8A SOT-23-3L
Produkt ist nicht verfügbar
YJL2312A-F2-0100HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 6.8A SOT-23-3L
Produkt ist nicht verfügbar
YJL2312ALYangjie TechnologyDescription: SOT-23 N 20V 7.6A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.12 EUR
15000+ 0.11 EUR
30000+ 0.1 EUR
60000+ 0.096 EUR
120000+ 0.086 EUR
300000+ 0.081 EUR
Mindestbestellmenge: 3000
YJL2312AQYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.17 EUR
15000+ 0.16 EUR
30000+ 0.15 EUR
60000+ 0.14 EUR
120000+ 0.12 EUR
300000+ 0.11 EUR
Mindestbestellmenge: 3000
YJL3134KWYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Produkt ist nicht verfügbar
YJL3134KWYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Produkt ist nicht verfügbar
YJL3134KW-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 0.75A SOT-323
Produkt ist nicht verfügbar
YJL3134KW-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 0.75A SOT-323
Produkt ist nicht verfügbar
YJL3400AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
auf Bestellung 363 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
47+ 0.56 EUR
100+ 0.3 EUR
Mindestbestellmenge: 39
YJL3400AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Produkt ist nicht verfügbar
YJL3400AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 33720 Stücke:
Lieferzeit 14-21 Tag (e)
1140+0.064 EUR
1260+ 0.057 EUR
1660+ 0.044 EUR
1740+ 0.041 EUR
Mindestbestellmenge: 1140
YJL3400AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 33720 Stücke:
Lieferzeit 7-14 Tag (e)
1140+0.064 EUR
1260+ 0.057 EUR
1660+ 0.044 EUR
1740+ 0.041 EUR
Mindestbestellmenge: 1140
YJL3400A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
auf Bestellung 1536 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
43+ 0.62 EUR
100+ 0.33 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
YJL3400A-F2-0000HFYYTransistor N-Channel MOSFET; 30V; 5A; 29mOhm; 12V; 1,3W; -55°C~150°C; Substitute: YJL3400A-F2-0000HF; IRLML6344 SOT23 TIRLML6344 c
Anzahl je Verpackung: 100 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
300+0.12 EUR
Mindestbestellmenge: 300
YJL3400A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL3401AYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
YJL3401AYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3401AYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 1960 Stücke:
Lieferzeit 21-28 Tag (e)
38+0.7 EUR
55+ 0.47 EUR
113+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 38
YJL3401AYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
YJL3401A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL3401A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.4A SOT-23-3L
Produkt ist nicht verfügbar
YJL3401ALYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.13 EUR
15000+ 0.12 EUR
60000+ 0.11 EUR
120000+ 0.099 EUR
300000+ 0.091 EUR
Mindestbestellmenge: 3000
YJL3401ALYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)
135+0.53 EUR
370+ 0.2 EUR
1020+ 0.07 EUR
3000+ 0.042 EUR
Mindestbestellmenge: 135
YJL3401ALYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
135+0.53 EUR
Mindestbestellmenge: 135
YJL3401AQYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.17 EUR
15000+ 0.16 EUR
30000+ 0.15 EUR
60000+ 0.14 EUR
120000+ 0.12 EUR
300000+ 0.11 EUR
Mindestbestellmenge: 3000
YJL3404AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
auf Bestellung 3199 Stücke:
Lieferzeit 21-28 Tag (e)
36+0.73 EUR
53+ 0.5 EUR
108+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 36
YJL3404AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL3404AYANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3404AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
Produkt ist nicht verfügbar
YJL3404A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
36+0.73 EUR
44+ 0.6 EUR
100+ 0.32 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 36
YJL3404A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 30V 5.6A SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
YJL3404AQYangjie TechnologyDescription: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.17 EUR
15000+ 0.16 EUR
30000+ 0.15 EUR
60000+ 0.14 EUR
120000+ 0.13 EUR
300000+ 0.12 EUR
Mindestbestellmenge: 3000
YJL3407AYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3407AYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
auf Bestellung 1652 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
50+ 0.52 EUR
103+ 0.25 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
YJL3407AYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
Produkt ist nicht verfügbar
YJL3407AYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJL3407A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.1A SOT-23-3L
auf Bestellung 18 Stücke:
Lieferzeit 21-28 Tag (e)
YJL3407A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.1A SOT-23-3L
Produkt ist nicht verfügbar
YJL3407ALYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL3407ALYANGJIE TECHNOLOGYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3415AYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
34+0.78 EUR
41+ 0.64 EUR
Mindestbestellmenge: 34
YJL3415AYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Produkt ist nicht verfügbar
YJL3415A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.6A SOT-23-3L
Produkt ist nicht verfügbar
YJL3415A-F2-0000HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 5.6A SOT-23-3L
auf Bestellung 2890 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
29+ 0.91 EUR
100+ 0.52 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 22
YJL3416AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
YJL3416AYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
auf Bestellung 748 Stücke:
Lieferzeit 21-28 Tag (e)
34+0.78 EUR
41+ 0.64 EUR
100+ 0.34 EUR
500+ 0.23 EUR
Mindestbestellmenge: 34
YJL3416A-F2-0100HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 7A SOT-23-3L
auf Bestellung 2831 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
43+ 0.61 EUR
100+ 0.33 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
YJL3416A-F2-0100HFYangzhou Yangjie Electronic Technology Co.,LtdDescription: N-CH MOSFET 20V 7A SOT-23-3L
Produkt ist nicht verfügbar
YJL40D10
auf Bestellung 3870 Stücke:
Lieferzeit 21-28 Tag (e)