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BUK9M20-40HX NEXPERIA BUK9M20-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M17-30EX NEXPERIA BUK9M17-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M53-60EX NEXPERIA BUK9M53-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 69A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 69A
Power dissipation: 36W
Case: LFPAK33; SOT1210
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M15-60EX NEXPERIA BUK9M15-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M19-60EX NEXPERIA BUK9M19-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26.8A
Pulsed drain current: 152A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 13.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M23-80EX NEXPERIA BUK9M23-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M43-100EX NEXPERIA BUK9M43-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M10-30EX NEXPERIA BUK9M10-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M11-40EX NEXPERIA BUK9M11-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M12-60EX NEXPERIA BUK9M12-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M14-40EX NEXPERIA BUK9M14-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M15-40HX NEXPERIA BUK9M15-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M156-100EX NEXPERIA BUK9M156-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M24-60EX NEXPERIA BUK9M24-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M35-80EX NEXPERIA BUK9M35-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M3R3-40HX NEXPERIA BUK9M3R3-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M42-60EX NEXPERIA BUK9M42-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M52-40EX NEXPERIA BUK9M52-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 70A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 70A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M5R0-40HX NEXPERIA BUK9M5R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M67-60ELX NEXPERIA BUK9M67-60EL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M6R0-40HX NEXPERIA BUK9M6R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M6R6-30EX NEXPERIA BUK9M6R6-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54.7A
Pulsed drain current: 309A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M6R7-40HX NEXPERIA BUK9M6R7-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M7R2-40EX NEXPERIA BUK9M7R2-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M85-60EX NEXPERIA BUK9M85-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M8R5-40HX NEXPERIA BUK9M8R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M9R5-40HX NEXPERIA BUK9M9R5-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 38.5A
Pulsed drain current: 218A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 23.3mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PMEG6030EP,115 PMEG6030EP,115 NEXPERIA PMEG6030EP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
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74HCT1G14GV,125 74HCT1G14GV,125 NEXPERIA 74HCT1G14G-DTE.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; SC74A; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: SC74A
Manufacturer series: Mini Logic
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
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PMBD7000,215 PMBD7000,215 NEXPERIA PMBD7000.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Power dissipation: 0.25W
Features of semiconductor devices: fast switching
Leakage current: 0.1mA
Capacitance: 1.5pF
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TDZ3V6J,115 TDZ3V6J,115 NEXPERIA TDZXJ_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; SOD323F; Ifmax: 250mA; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. load current: 0.25A
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MM3Z18VT1GX MM3Z18VT1GX NEXPERIA MM3Z_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOD323; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. load current: 0.2A
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PMEG2005EJ,115 PMEG2005EJ,115 NEXPERIA PMEGXX05EH_EJ_SER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 10A
Kind of package: reel; tape
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PMEG1030EJ,115 PMEG1030EJ,115 NEXPERIA PMEG1030EH_EJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 10V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 9A
Kind of package: reel; tape
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PMEG4002EJ,115 PMEG4002EJ,115 NEXPERIA PMEG4002EJ-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2.6A
Kind of package: reel; tape
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PMEG2005EJ-QX PMEG2005EJ-QX NEXPERIA PMEG2005EJ-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 10A
Kind of package: reel; tape
Power dissipation: 0.83W
Application: automotive industry
Leakage current: 0.2mA
Capacitance: 80pF
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PMEG3005EJ-QX PMEG3005EJ-QX NEXPERIA PMEG3005EJ-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.43V
Leakage current: 0.15mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.83W
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PMEG2015EJ,115 PMEG2015EJ,115 NEXPERIA PMEG2015EH_EJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1.5A
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Kind of package: reel; tape
Capacitance: 50pF
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PMEG3005EJ,115 PMEG3005EJ,115 NEXPERIA PMEG3005EJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.43V
Max. forward impulse current: 10A
Kind of package: reel; tape
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PMEG3005EJF PMEG3005EJF NEXPERIA PMEG3005EJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Kind of package: reel; tape
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PMEG3015EJ,115 PMEG3015EJ,115 NEXPERIA PMEG3015EJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 30V; 1.5A
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Capacitance: 72pF
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BZX84J-C27,135 BZX84J-C27,135 NEXPERIA BZX84J_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 27V; SMD; SC90,SOD323F; Ifmax: 250mA; reel,tape
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 27V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.25A
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BZX84J-C12F BZX84J-C12F NEXPERIA BZX84J_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 12V; SMD; SC90,SOD323F; Ifmax: 250mA; reel,tape
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 12V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.25A
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PZU30B,115 PZU30B,115 NEXPERIA PZUXB_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 30V; SMD; SC90,SOD323F; Ifmax: 200mA; reel,tape
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 30V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.2A
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PZU6.8B,115 PZU6.8B,115 NEXPERIA PZUXB_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 6.8V; SMD; SC90,SOD323F; Ifmax: 200mA
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 6.8V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.2A
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PZU9.1B,115 PZU9.1B,115 NEXPERIA PZUXB_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 9.1V; SMD; SC90,SOD323F; Ifmax: 200mA
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 9.1V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.2A
Produkt ist nicht verfügbar
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PSMN5R2-60YLX NEXPERIA PSMN5R2-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 479A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 479A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 78.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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74AUP1T08GXH NEXPERIA 74AUP1T08.pdf Category: Gates, inverters
Description: IC: digital; translator; AND; IN: 2; CMOS; SMD; X2SON5; 2.3÷3.6VDC
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 2.3...3.6V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: AUP
Kind of integrated circuit: translator
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74LV1T08GXH NEXPERIA 74LV1T08GXH.pdf Category: Gates, inverters
Description: IC: digital; voltage translating gate; AND; Ch: 1; IN: 2; TTL; SMD
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: TTL
Quiescent current: 10µA
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: LV
Kind of integrated circuit: voltage translating gate
Number of channels: single; 1
Delay time: 13.4ns
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74LV1T86GXH NEXPERIA 74LV1T86GXH.pdf Category: Gates, inverters
Description: IC: digital; voltage translating gate; XOR; Ch: 1; IN: 2; TTL; SMD
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: XOR
Type of integrated circuit: digital
Technology: TTL
Quiescent current: 10µA
Number of inputs: 2
Case: X2SON5
Family: LV
Kind of integrated circuit: voltage translating gate
Number of channels: single; 1
Delay time: 15.8ns
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74LV1T87GXH NEXPERIA 74LV1T87GXH.pdf Category: Gates, inverters
Description: IC: digital; voltage translating gate; XNOR; Ch: 1; IN: 2; TTL; SMD
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: XNOR
Type of integrated circuit: digital
Technology: TTL
Quiescent current: 10µA
Number of inputs: 2
Case: X2SON5
Family: LV
Kind of integrated circuit: voltage translating gate
Number of channels: single; 1
Delay time: 15.8ns
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74LV1T32GXH NEXPERIA 74LV1T32GXH.pdf Category: Level translators
Description: IC: digital; translator; Ch: 1; CMOS; 1.6÷5.5VDC; SMD; X2SON5; IN: 2
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: OR
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: LV
Number of outputs: 1
Kind of integrated circuit: translator
Number of channels: 1
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74AUP1T32GXH NEXPERIA 74AUP1T32GXH.pdf Category: Level translators
Description: IC: digital; translator; Ch: 1; CMOS; 2.3÷3.6VDC; SMD; X2SON5; IN: 2
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 2.3...3.6V DC
Kind of gate: OR
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: AUP
Number of outputs: 1
Kind of integrated circuit: translator
Number of channels: 1
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74LVC32AD,118 74LVC32AD,118 NEXPERIA 74LVC32AD,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2VDC,1.65÷3.6VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Delay time: 10.4ns
Quiescent current: 40µA
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74LVC32ADB,112 74LVC32ADB,112 NEXPERIA 74LVC32A.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: LVC
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74HCT27D,653 74HCT27D,653 NEXPERIA 74HCT27D,653.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HCT
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
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74HCT27BQ,115 NEXPERIA 74HCT27BQ,115.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: DHVQFN14
Family: HCT
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
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74HCT27PW,118 74HCT27PW,118 NEXPERIA 74HCT27PW,118.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Family: HCT
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
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74AHCT08D,118 74AHCT08D,118 NEXPERIA 74AHCT08D,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AHCT
Delay time: 10ns
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74AHCT08PW,118 74AHCT08PW,118 NEXPERIA 74AHCT08PW,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AHCT
Delay time: 10ns
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BUK9M20-40HX BUK9M20-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M17-30EX BUK9M17-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M53-60EX BUK9M53-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 69A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 69A
Power dissipation: 36W
Case: LFPAK33; SOT1210
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M15-60EX BUK9M15-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M19-60EX BUK9M19-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26.8A
Pulsed drain current: 152A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 13.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M23-80EX BUK9M23-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M43-100EX BUK9M43-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M10-30EX BUK9M10-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M11-40EX BUK9M11-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M12-60EX BUK9M12-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M14-40EX BUK9M14-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M15-40HX BUK9M15-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M156-100EX BUK9M156-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
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BUK9M24-60EX BUK9M24-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK9M35-80EX BUK9M35-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M3R3-40HX BUK9M3R3-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M42-60EX BUK9M42-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M52-40EX BUK9M52-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.6A; Idm: 70A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.6A
Pulsed drain current: 70A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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BUK9M5R0-40HX BUK9M5R0-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M67-60ELX BUK9M67-60EL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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BUK9M6R0-40HX BUK9M6R0-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M6R6-30EX BUK9M6R6-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54.7A
Pulsed drain current: 309A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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BUK9M6R7-40HX BUK9M6R7-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M7R2-40EX BUK9M7R2-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
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BUK9M85-60EX BUK9M85-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M8R5-40HX BUK9M8R5-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK9M9R5-40HX BUK9M9R5-40H.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 38.5A
Pulsed drain current: 218A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 23.3mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG6030EP,115 PMEG6030EP.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 80480 Stücke:
Lieferzeit 14-21 Tag (e)
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74HCT1G14GV,125 74HCT1G14G-DTE.PDF
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; SC74A; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: SC74A
Manufacturer series: Mini Logic
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HCT
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)
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PMBD7000,215 PMBD7000.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Power dissipation: 0.25W
Features of semiconductor devices: fast switching
Leakage current: 0.1mA
Capacitance: 1.5pF
Produkt ist nicht verfügbar
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TDZ3V6J,115 TDZXJ_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; SOD323F; Ifmax: 250mA; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. load current: 0.25A
Produkt ist nicht verfügbar
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MM3Z18VT1GX MM3Z_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOD323; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. load current: 0.2A
Produkt ist nicht verfügbar
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PMEG2005EJ,115 PMEGXX05EH_EJ_SER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PMEG1030EJ,115 PMEG1030EH_EJ.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 10V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 9A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PMEG4002EJ,115 PMEG4002EJ-DTE.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2.6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PMEG2005EJ-QX PMEG2005EJ-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 10A
Kind of package: reel; tape
Power dissipation: 0.83W
Application: automotive industry
Leakage current: 0.2mA
Capacitance: 80pF
Produkt ist nicht verfügbar
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PMEG3005EJ-QX PMEG3005EJ-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.43V
Leakage current: 0.15mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.83W
Produkt ist nicht verfügbar
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PMEG2015EJ,115 PMEG2015EH_EJ.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1.5A
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Kind of package: reel; tape
Capacitance: 50pF
Produkt ist nicht verfügbar
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PMEG3005EJ,115 PMEG3005EJ.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 70pF
Max. forward voltage: 0.43V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PMEG3005EJF PMEG3005EJ.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PMEG3015EJ,115 PMEG3015EJ.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 30V; 1.5A
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Capacitance: 72pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZX84J-C27,135 BZX84J_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 27V; SMD; SC90,SOD323F; Ifmax: 250mA; reel,tape
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 27V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.25A
Produkt ist nicht verfügbar
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BZX84J-C12F BZX84J_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 12V; SMD; SC90,SOD323F; Ifmax: 250mA; reel,tape
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 12V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.25A
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
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PZU30B,115 PZUXB_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 30V; SMD; SC90,SOD323F; Ifmax: 200mA; reel,tape
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 30V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.2A
Produkt ist nicht verfügbar
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PZU6.8B,115 PZUXB_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 6.8V; SMD; SC90,SOD323F; Ifmax: 200mA
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 6.8V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.2A
Produkt ist nicht verfügbar
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PZU9.1B,115 PZUXB_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 9.1V; SMD; SC90,SOD323F; Ifmax: 200mA
Type of diode: Zener
Case: SC90; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Kind of package: reel; tape
Zener voltage: 9.1V
Tolerance: ±5%
Power dissipation: 0.55W
Max. load current: 0.2A
Produkt ist nicht verfügbar
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PSMN5R2-60YLX PSMN5R2-60YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 479A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 479A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 78.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74AUP1T08GXH 74AUP1T08.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; translator; AND; IN: 2; CMOS; SMD; X2SON5; 2.3÷3.6VDC
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 2.3...3.6V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: AUP
Kind of integrated circuit: translator
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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74LV1T08GXH 74LV1T08GXH.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; voltage translating gate; AND; Ch: 1; IN: 2; TTL; SMD
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: AND
Type of integrated circuit: digital
Technology: TTL
Quiescent current: 10µA
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: LV
Kind of integrated circuit: voltage translating gate
Number of channels: single; 1
Delay time: 13.4ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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74LV1T86GXH 74LV1T86GXH.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; voltage translating gate; XOR; Ch: 1; IN: 2; TTL; SMD
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: XOR
Type of integrated circuit: digital
Technology: TTL
Quiescent current: 10µA
Number of inputs: 2
Case: X2SON5
Family: LV
Kind of integrated circuit: voltage translating gate
Number of channels: single; 1
Delay time: 15.8ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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74LV1T87GXH 74LV1T87GXH.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; voltage translating gate; XNOR; Ch: 1; IN: 2; TTL; SMD
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: XNOR
Type of integrated circuit: digital
Technology: TTL
Quiescent current: 10µA
Number of inputs: 2
Case: X2SON5
Family: LV
Kind of integrated circuit: voltage translating gate
Number of channels: single; 1
Delay time: 15.8ns
Produkt ist nicht verfügbar
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74LV1T32GXH 74LV1T32GXH.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; translator; Ch: 1; CMOS; 1.6÷5.5VDC; SMD; X2SON5; IN: 2
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Kind of gate: OR
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: LV
Number of outputs: 1
Kind of integrated circuit: translator
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1T32GXH 74AUP1T32GXH.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; translator; Ch: 1; CMOS; 2.3÷3.6VDC; SMD; X2SON5; IN: 2
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 2.3...3.6V DC
Kind of gate: OR
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: X2SON5
Family: AUP
Number of outputs: 1
Kind of integrated circuit: translator
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
74LVC32AD,118 74LVC32AD,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 1.2VDC,1.65÷3.6VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Delay time: 10.4ns
Quiescent current: 40µA
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
74LVC32ADB,112 74LVC32A.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: LVC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
74HCT27D,653 74HCT27D,653.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Family: HCT
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
auf Bestellung 2473 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
74HCT27BQ,115 74HCT27BQ,115.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: DHVQFN14
Family: HCT
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74HCT27PW,118 74HCT27PW,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Family: HCT
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 32ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT08D,118 74AHCT08D,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AHCT
Delay time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT08PW,118 74AHCT08PW,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AHCT
Delay time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH