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PMZB950UPEYL NEXPERIA PMZB950UPE.pdf PMZB950UPEYL SMD P channel transistors
Produkt ist nicht verfügbar
PNE20010ERX NEXPERIA PNE20010ER.pdf PNE20010ERX SMD universal diodes
Produkt ist nicht verfügbar
PNS40010ER,115 PNS40010ER,115 NEXPERIA PNS40010ER.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3830 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
845+ 0.085 EUR
895+ 0.08 EUR
Mindestbestellmenge: 315
PQMD16Z NEXPERIA PQMD16.pdf PQMD16Z Complementary transistors
Produkt ist nicht verfügbar
PRTR5V0U2AX,215 PRTR5V0U2AX,215 NEXPERIA PRTR5V0U2AX.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4142 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
202+ 0.35 EUR
263+ 0.27 EUR
278+ 0.26 EUR
Mindestbestellmenge: 167
PRTR5V0U2F,115 NEXPERIA PRTR5V0U2F_PRTR5V0U2K.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4581 Stücke:
Lieferzeit 7-14 Tag (e)
198+0.36 EUR
228+ 0.31 EUR
274+ 0.26 EUR
290+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 198
PRTR5V0U2X,215 PRTR5V0U2X,215 NEXPERIA PRTR5V0U2X-DTE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2526 Stücke:
Lieferzeit 7-14 Tag (e)
191+0.38 EUR
218+ 0.33 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 191
PRTR5V0U4D,125 PRTR5V0U4D,125 NEXPERIA PRTR5V0U4D.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 685 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
228+ 0.31 EUR
317+ 0.23 EUR
335+ 0.21 EUR
Mindestbestellmenge: 179
PSC1065KQ NEXPERIA PSC1065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Kind of package: tube
Max. forward voltage: 2.6V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Leakage current: 120µA
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 42A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN004-60B,118 PSMN004-60B,118 NEXPERIA PSMN004-60B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 774 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.6 EUR
23+ 3.17 EUR
27+ 2.75 EUR
28+ 2.6 EUR
800+ 2.5 EUR
Mindestbestellmenge: 20
PSMN005-75B,118 NEXPERIA PSMN005-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.75mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN008-75B,118 NEXPERIA PSMN008-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 240A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100B,118 NEXPERIA PSMN009-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100P,127 PSMN009-100P,127 NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
21+ 3.55 EUR
27+ 2.75 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
PSMN010-80YLX NEXPERIA PSMN010-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 84.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-100YSFX NEXPERIA PSMN011-100YSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26.2A
Pulsed drain current: 318A
Power dissipation: 152W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-30YLC,115 NEXPERIA PSMN011-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 150A
Power dissipation: 29W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MLX NEXPERIA PSMN011-60ML.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 242A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.35mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MSX PSMN011-60MSX NEXPERIA PSMN011-60MS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1336 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
91+ 0.79 EUR
100+ 0.72 EUR
113+ 0.63 EUR
120+ 0.6 EUR
500+ 0.58 EUR
Mindestbestellmenge: 70
PSMN011-80YS,115 NEXPERIA PSMN011-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YLX NEXPERIA PSMN012-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 339A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 33.1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA PSMN012-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60MSX NEXPERIA PSMN012-60MS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60YS,115 PSMN012-60YS,115 NEXPERIA PSMN012-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80BS,118 NEXPERIA PSMN012-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 295A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80PS,127 PSMN012-80PS,127 NEXPERIA PSMN012-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4561 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.09 EUR
39+ 1.87 EUR
44+ 1.66 EUR
50+ 1.43 EUR
53+ 1.36 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 35
PSMN013-100BS,118 PSMN013-100BS,118 NEXPERIA PSMN013-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-100PS,127 PSMN013-100PS,127 NEXPERIA PSMN013-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-100YSEX NEXPERIA PSMN013-100YSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Pulsed drain current: 330A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30MLC,115 NEXPERIA PSMN013-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA PSMN013-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-40VLDX NEXPERIA PSMN013-40VLD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-80YS,115 NEXPERIA PSMN013-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 233A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-40YS,115 PSMN014-40YS,115 NEXPERIA PSMN014-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 46A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-80YLX NEXPERIA PSMN014-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 56.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100B,118 PSMN015-100B,118 NEXPERIA PSMN015-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100P,127 PSMN015-100P,127 NEXPERIA PSMN015-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.82 EUR
29+ 2.52 EUR
38+ 1.89 EUR
Mindestbestellmenge: 26
PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 782 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
60+ 1.2 EUR
75+ 0.96 EUR
79+ 0.92 EUR
800+ 0.9 EUR
Mindestbestellmenge: 54
PSMN015-60PS,127 PSMN015-60PS,127 NEXPERIA PSMN015-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
48+ 1.49 EUR
Mindestbestellmenge: 45
PSMN016-100BS,118 NEXPERIA PSMN016-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 44.8mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN016-100PS,127 PSMN016-100PS,127 NEXPERIA PSMN016-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.16 EUR
37+ 1.94 EUR
44+ 1.65 EUR
46+ 1.56 EUR
50+ 1.54 EUR
250+ 1.5 EUR
Mindestbestellmenge: 34
PSMN016-100YS,115 NEXPERIA PSMN016-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.7mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30BL,118 NEXPERIA PSMN017-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 154A
Power dissipation: 47W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PHGLS24366-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.93 EUR
42+ 1.7 EUR
Mindestbestellmenge: 37
PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA PSMN017-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1328 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.98 EUR
103+ 0.7 EUR
105+ 0.69 EUR
109+ 0.66 EUR
Mindestbestellmenge: 74
PSMN017-80BS,118 NEXPERIA PSMN017-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-80PS,127 PSMN017-80PS,127 NEXPERIA PSMN017-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
44+ 1.63 EUR
250+ 1.17 EUR
Mindestbestellmenge: 41
PSMN018-80YS,115 PSMN018-80YS,115 NEXPERIA PSMN018-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN019-100YLX NEXPERIA PSMN019-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 724nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 226A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN020-30MLCX NEXPERIA PSMN020-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN021-100YLX NEXPERIA PSMN021-100YL.pdf PSMN021-100YLX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN022-30BL,118 NEXPERIA PSMN022-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 50.99mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN022-30PL,127 PSMN022-30PL,127 NEXPERIA PSMN022-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.46 EUR
18+ 3.98 EUR
50+ 1.43 EUR
Mindestbestellmenge: 16
PSMN025-100D,118 PSMN025-100D,118 NEXPERIA PSMN025-100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN025-80YLX NEXPERIA PSMN025-80YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26.5A; Idm: 150A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26.5A
Pulsed drain current: 150A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 67.8mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN026-80YS,115 PSMN026-80YS,115 NEXPERIA PSMN026-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 34A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 34A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 683 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
100+ 0.72 EUR
112+ 0.64 EUR
132+ 0.54 EUR
140+ 0.51 EUR
Mindestbestellmenge: 71
PSMN027-100BS,118 NEXPERIA PSMN027-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN027-100PS,127 PSMN027-100PS,127 NEXPERIA PSMN027-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.75 EUR
34+ 2.1 EUR
250+ 1.24 EUR
Mindestbestellmenge: 26
PSMN028-100YS,115 NEXPERIA PSMN028-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 137A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 137A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMZB950UPEYL PMZB950UPE.pdf
Hersteller: NEXPERIA
PMZB950UPEYL SMD P channel transistors
Produkt ist nicht verfügbar
PNE20010ERX PNE20010ER.pdf
Hersteller: NEXPERIA
PNE20010ERX SMD universal diodes
Produkt ist nicht verfügbar
PNS40010ER,115 PNS40010ER.pdf
PNS40010ER,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3830 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
845+ 0.085 EUR
895+ 0.08 EUR
Mindestbestellmenge: 315
PQMD16Z PQMD16.pdf
Hersteller: NEXPERIA
PQMD16Z Complementary transistors
Produkt ist nicht verfügbar
PRTR5V0U2AX,215 PRTR5V0U2AX.pdf
PRTR5V0U2AX,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4142 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
202+ 0.35 EUR
263+ 0.27 EUR
278+ 0.26 EUR
Mindestbestellmenge: 167
PRTR5V0U2F,115 PRTR5V0U2F_PRTR5V0U2K.pdf
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4581 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
228+ 0.31 EUR
274+ 0.26 EUR
290+ 0.25 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 198
PRTR5V0U2X,215 PRTR5V0U2X-DTE.pdf
PRTR5V0U2X,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2526 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
218+ 0.33 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 191
PRTR5V0U4D,125 PRTR5V0U4D.pdf
PRTR5V0U4D,125
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5V
Leakage current: 0.1µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 685 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
228+ 0.31 EUR
317+ 0.23 EUR
335+ 0.21 EUR
Mindestbestellmenge: 179
PSC1065KQ PSC1065K.pdf
Hersteller: NEXPERIA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Kind of package: tube
Max. forward voltage: 2.6V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Leakage current: 120µA
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 42A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN004-60B,118 PSMN004-60B.pdf
PSMN004-60B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 774 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.6 EUR
23+ 3.17 EUR
27+ 2.75 EUR
28+ 2.6 EUR
800+ 2.5 EUR
Mindestbestellmenge: 20
PSMN005-75B,118 PSMN005-75B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.75mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN008-75B,118 PSMN008-75B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 240A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100B,118 PSMN009-100B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN009-100P,127 PSMN009-100P.pdf
PSMN009-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.93 EUR
21+ 3.55 EUR
27+ 2.75 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
PSMN010-80YLX PSMN010-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 84.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-100YSFX PSMN011-100YSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26.2A
Pulsed drain current: 318A
Power dissipation: 152W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-30YLC,115 PSMN011-30YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 150A
Power dissipation: 29W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MLX PSMN011-60ML.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 242A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.35mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN011-60MSX PSMN011-60MS.pdf
PSMN011-60MSX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1336 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
91+ 0.79 EUR
100+ 0.72 EUR
113+ 0.63 EUR
120+ 0.6 EUR
500+ 0.58 EUR
Mindestbestellmenge: 70
PSMN011-80YS,115 PSMN011-80YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YLX PSMN012-100YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 339A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 33.1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60MSX PSMN012-60MS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-60YS,115 PSMN012-60YS.pdf
PSMN012-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80BS,118 PSMN012-80BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 295A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN012-80PS,127 PSMN012-80PS.pdf
PSMN012-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4561 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.09 EUR
39+ 1.87 EUR
44+ 1.66 EUR
50+ 1.43 EUR
53+ 1.36 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 35
PSMN013-100BS,118 PSMN013-100BS.pdf
PSMN013-100BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-100PS,127 PSMN013-100PS.pdf
PSMN013-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-100YSEX PSMN013-100YSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Pulsed drain current: 330A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30MLC,115 PSMN013-30MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-30YLC,115 PSMN013-30YLC.pdf
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-40VLDX PSMN013-40VLD.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-60YLX PSMN013-60YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN013-80YS,115 PSMN013-80YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 233A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-40YS,115 PSMN014-40YS.pdf
PSMN014-40YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 46A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN014-80YLX PSMN014-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 56.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100B,118 PSMN015-100B.pdf
PSMN015-100B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN015-100P,127 PSMN015-100P.pdf
PSMN015-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.82 EUR
29+ 2.52 EUR
38+ 1.89 EUR
Mindestbestellmenge: 26
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 782 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
60+ 1.2 EUR
75+ 0.96 EUR
79+ 0.92 EUR
800+ 0.9 EUR
Mindestbestellmenge: 54
PSMN015-60PS,127 PSMN015-60PS.pdf
PSMN015-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
48+ 1.49 EUR
Mindestbestellmenge: 45
PSMN016-100BS,118 PSMN016-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 44.8mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN016-100PS,127 PSMN016-100PS.pdf
PSMN016-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.16 EUR
37+ 1.94 EUR
44+ 1.65 EUR
46+ 1.56 EUR
50+ 1.54 EUR
250+ 1.5 EUR
Mindestbestellmenge: 34
PSMN016-100YS,115 PSMN016-100YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.7mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30BL,118 PSMN017-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 154A
Power dissipation: 47W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-30PL,127 PHGLS24366-1.pdf?t.download=true&u=5oefqw
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.93 EUR
42+ 1.7 EUR
Mindestbestellmenge: 37
PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1328 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.98 EUR
103+ 0.7 EUR
105+ 0.69 EUR
109+ 0.66 EUR
Mindestbestellmenge: 74
PSMN017-80BS,118 PSMN017-80BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN017-80PS,127 PSMN017-80PS.pdf
PSMN017-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
44+ 1.63 EUR
250+ 1.17 EUR
Mindestbestellmenge: 41
PSMN018-80YS,115 PSMN018-80YS.pdf
PSMN018-80YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN019-100YLX PSMN019-100YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 724nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 226A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN020-30MLCX PSMN020-30MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN021-100YLX PSMN021-100YL.pdf
Hersteller: NEXPERIA
PSMN021-100YLX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN022-30BL,118 PSMN022-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 50.99mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN022-30PL,127 PSMN022-30PL.pdf
PSMN022-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 125A; 41W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 125A
Power dissipation: 41W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 4.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.46 EUR
18+ 3.98 EUR
50+ 1.43 EUR
Mindestbestellmenge: 16
PSMN025-100D,118 PSMN025-100D.pdf
PSMN025-100D,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN025-80YLX PSMN025-80YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26.5A; Idm: 150A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26.5A
Pulsed drain current: 150A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 67.8mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN026-80YS,115 PSMN026-80YS.pdf
PSMN026-80YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 34A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 34A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 683 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
100+ 0.72 EUR
112+ 0.64 EUR
132+ 0.54 EUR
140+ 0.51 EUR
Mindestbestellmenge: 71
PSMN027-100BS,118 PSMN027-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN027-100PS,127 PSMN027-100PS.pdf
PSMN027-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.75 EUR
34+ 2.1 EUR
250+ 1.24 EUR
Mindestbestellmenge: 26
PSMN028-100YS,115 PSMN028-100YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 137A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 137A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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