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PSMN3R8-100BS,118 PSMN3R8-100BS,118 NEXPERIA PSMN3R8-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
PSMN3R9-100YSFX NEXPERIA PSMN3R9-100YSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 690A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 690A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN3R9-25MLC,115 NEXPERIA PSMN3R9-25MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 390A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 390A
Power dissipation: 69W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.85mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN3R9-60PSQ PSMN3R9-60PSQ NEXPERIA PSMN3R9-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.79 EUR
21+ 3.42 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 19
PSMN4R0-25YLC,115 NEXPERIA PSMN4R0-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; Idm: 336A; 61W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 61W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 22.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PSMN4R0-30YL,115 NEXPERIA PSMN4R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 396A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 396A
Power dissipation: 69W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.73mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R0-30YLDX NEXPERIA PSMN4R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R0-40YS,115 PSMN4R0-40YS,115 NEXPERIA psmn4r0-40ys.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1173 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
58+ 1.24 EUR
82+ 0.87 EUR
87+ 0.83 EUR
Mindestbestellmenge: 49
PSMN4R0-40YS,115 PSMN4R0-40YS,115 NEXPERIA psmn4r0-40ys.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1173 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
58+ 1.24 EUR
82+ 0.87 EUR
87+ 0.83 EUR
Mindestbestellmenge: 49
PSMN4R0-60YS,115 NEXPERIA PSMN4R0-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 418A; 130W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
On-state resistance: 3.6mΩ
Pulsed drain current: 418A
Power dissipation: 130W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R1-30YLC,115 NEXPERIA PSMN4R1-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; Idm: 367A; 67W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 367A
Drain-source voltage: 30V
Drain current: 92A
On-state resistance: 4.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 67W
Polarisation: unipolar
Gate charge: 23nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R1-60YLX NEXPERIA PSMN4R1-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-30MLDX NEXPERIA PSMN4R2-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 366A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 366A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 4.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-40VSHX NEXPERIA PSMN4R2-40VSH.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69.5A
Pulsed drain current: 393A
Power dissipation: 85W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-60PLQ PSMN4R2-60PLQ NEXPERIA PSMN4R2-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 124A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-80YSEX NEXPERIA PSMN4R2-80YSE.pdf PSMN4R2-80YSEX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R3-100PS,127 PSMN4R3-100PS,127 NEXPERIA PSMN4R3-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 673A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 NEXPERIA PSMN4R3-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.65mΩ
Mounting: SMD
Gate charge: 41.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30PL,127 PSMN4R3-30PL,127 NEXPERIA PSMN4R3-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-40MLHX NEXPERIA PSMN4R3-40MLH.pdf PSMN4R3-40MLHX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R3-40MSHX NEXPERIA PSMN4R3-40MSH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 69A; Idm: 392A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PSMN4R3-80PS,127 NEXPERIA PSMN4R3-80PS.pdf PSMN4R3-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-30MLC,115 NEXPERIA PSMN4R4-30MLC.pdf PHGLS24773-1.pdf?t.download=true&u=5oefqw PSMN4R4-30MLC.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-80BS,118 PSMN4R4-80BS,118 NEXPERIA PSMN4R4-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Pulsed drain current: 680A
Power dissipation: 306W
Gate charge: 125nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 9.12mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
21+ 3.53 EUR
27+ 2.65 EUR
29+ 2.51 EUR
Mindestbestellmenge: 19
PSMN4R4-80PS,127 PSMN4R4-80PS,127 NEXPERIA PSMN4R4-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 680A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.53 EUR
18+ 3.98 EUR
Mindestbestellmenge: 16
PSMN4R5-40BS,118 NEXPERIA PSMN4R5-40BS.pdf PSMN4R5-40BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R5-40PS,127 NEXPERIA PSMN4R5-40PS.pdf PSMN4R5-40PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R6-60BS,118 PSMN4R6-60BS,118 NEXPERIA PSMN4R6-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
35+ 2.07 EUR
46+ 1.59 EUR
48+ 1.5 EUR
Mindestbestellmenge: 32
PSMN4R6-60PS,127 PSMN4R6-60PS,127 NEXPERIA PSMN4R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100BSEJ PSMN4R8-100BSEJ NEXPERIA PSMN4R8-100BSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100PSEQ PSMN4R8-100PSEQ NEXPERIA PSMN4R8-100PSE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100YSEX NEXPERIA PSMN4R8-100YSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-100PS,127 PSMN5R0-100PS,127 NEXPERIA PSMN5R0-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MLHX NEXPERIA PSMN5R0-40MLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MSHX NEXPERIA PSMN5R0-40MSH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
PSMN5R0-80BS,118 NEXPERIA PSMN5R0-80BS.pdf PSMN5R0-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R0-80PS,127 NEXPERIA PSMN5R0-80PS.pdf PSMN5R0-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN5R2-60YLX NEXPERIA PSMN5R2-60YL.pdf PSMN5R2-60YLX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R3-25MLDX NEXPERIA PSMN5R3-25MLD.pdf PSMN5R3-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R4-25YLDX NEXPERIA PSMN5R4-25YLD.pdf PSMN5R4-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R5-60YS,115 PSMN5R5-60YS,115 NEXPERIA PSMN5R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2835 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.07 EUR
38+ 1.92 EUR
46+ 1.57 EUR
49+ 1.49 EUR
500+ 1.43 EUR
Mindestbestellmenge: 35
PSMN5R6-100BS,118 NEXPERIA PSMN5R6-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-100PS,127 PSMN5R6-100PS,127 NEXPERIA PSMN5R6-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-60YLX NEXPERIA PSMN5R6-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R8-40YS,115 NEXPERIA PSMN5R8-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R0-25YLB,115 NEXPERIA PSMN6R0-25YLB.pdf PSMN6R0-25YLB.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-25YLDX NEXPERIA PSMN6R0-25YLD.pdf PSMN6R0-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YL,115 NEXPERIA PSMN6R0-30YL.pdf PSMN6R0-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YLDX NEXPERIA PSMN6R0-30YLD.pdf PSMN6R0-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-25MLDX NEXPERIA PSMN6R1-25MLD.pdf PSMN6R1-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-30YLDX NEXPERIA PSMN6R1-30YLD.pdf PSMN6R1-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R3-120PS NEXPERIA PSMN6R3-120PS.pdf PSMN6R3-120PS THT N channel transistors
Produkt ist nicht verfügbar
PSMN6R4-30MLDX NEXPERIA PSMN6R4-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-25YLC,115 PSMN6R5-25YLC,115 NEXPERIA PSMN6R5-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-80BS,118 NEXPERIA PSMN6R5-80BS.pdf PSMN6R5-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R5-80PS,127 NEXPERIA PSMN6R5-80PS.pdf PSMN6R5-80PS.127 THT N channel transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.85 EUR
37+ 1.98 EUR
39+ 1.87 EUR
Mindestbestellmenge: 26
PSMN6R7-40MLDX NEXPERIA PSMN6R7-40MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R7-40MSDX NEXPERIA PSMN6R7-40MSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R9-100YSFX NEXPERIA PSMN6R9-100YSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-100BS,118 NEXPERIA PSMN7R0-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN3R8-100BS,118 PSMN3R8-100BS.pdf
PSMN3R8-100BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
PSMN3R9-100YSFX PSMN3R9-100YSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 690A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 690A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN3R9-25MLC,115 PSMN3R9-25MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 390A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 390A
Power dissipation: 69W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 4.85mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.79 EUR
21+ 3.42 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 19
PSMN4R0-25YLC,115 PSMN4R0-25YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; Idm: 336A; 61W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 61W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 22.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PSMN4R0-30YL,115 PSMN4R0-30YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 396A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 396A
Power dissipation: 69W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.73mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R0-30YLDX PSMN4R0-30YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R0-40YS,115 psmn4r0-40ys.pdf
PSMN4R0-40YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1173 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
58+ 1.24 EUR
82+ 0.87 EUR
87+ 0.83 EUR
Mindestbestellmenge: 49
PSMN4R0-40YS,115 psmn4r0-40ys.pdf
PSMN4R0-40YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1173 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
58+ 1.24 EUR
82+ 0.87 EUR
87+ 0.83 EUR
Mindestbestellmenge: 49
PSMN4R0-60YS,115 PSMN4R0-60YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 418A; 130W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
On-state resistance: 3.6mΩ
Pulsed drain current: 418A
Power dissipation: 130W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R1-30YLC,115 PSMN4R1-30YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; Idm: 367A; 67W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 367A
Drain-source voltage: 30V
Drain current: 92A
On-state resistance: 4.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 67W
Polarisation: unipolar
Gate charge: 23nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R1-60YLX PSMN4R1-60YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-30MLDX PSMN4R2-30MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 366A; 65W
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 366A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 4.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-40VSHX PSMN4R2-40VSH.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69.5A
Pulsed drain current: 393A
Power dissipation: 85W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-60PLQ PSMN4R2-60PL.pdf
PSMN4R2-60PLQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 124A; 263W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 124A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R2-80YSEX PSMN4R2-80YSE.pdf
Hersteller: NEXPERIA
PSMN4R2-80YSEX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R3-100PS,127 PSMN4R3-100PS.pdf
PSMN4R3-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 673A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.65mΩ
Mounting: SMD
Gate charge: 41.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30PL,127 PSMN4R3-30PL.pdf
PSMN4R3-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-40MLHX PSMN4R3-40MLH.pdf
Hersteller: NEXPERIA
PSMN4R3-40MLHX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R3-40MSHX PSMN4R3-40MSH.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 69A; Idm: 392A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PSMN4R3-80PS,127 PSMN4R3-80PS.pdf
Hersteller: NEXPERIA
PSMN4R3-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-30MLC,115 PSMN4R4-30MLC.pdf PHGLS24773-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
PSMN4R4-30MLC.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-80BS,118 PSMN4R4-80BS.pdf
PSMN4R4-80BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Pulsed drain current: 680A
Power dissipation: 306W
Gate charge: 125nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 9.12mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.93 EUR
21+ 3.53 EUR
27+ 2.65 EUR
29+ 2.51 EUR
Mindestbestellmenge: 19
PSMN4R4-80PS,127 PSMN4R4-80PS.pdf
PSMN4R4-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 680A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.53 EUR
18+ 3.98 EUR
Mindestbestellmenge: 16
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
Hersteller: NEXPERIA
PSMN4R5-40BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R5-40PS,127 PSMN4R5-40PS.pdf
Hersteller: NEXPERIA
PSMN4R5-40PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
35+ 2.07 EUR
46+ 1.59 EUR
48+ 1.5 EUR
Mindestbestellmenge: 32
PSMN4R6-60PS,127 PSMN4R6-60PS.pdf
PSMN4R6-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
PSMN4R8-100BSEJ
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100PSEQ PSMN4R8-100PSE.pdf
PSMN4R8-100PSEQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100YSEX PSMN4R8-100YSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-100PS,127 PSMN5R0-100PS.pdf
PSMN5R0-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MLHX PSMN5R0-40MLH.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MSHX PSMN5R0-40MSH.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
PSMN5R0-80BS,118 PSMN5R0-80BS.pdf
Hersteller: NEXPERIA
PSMN5R0-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R0-80PS,127 PSMN5R0-80PS.pdf
Hersteller: NEXPERIA
PSMN5R0-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN5R2-60YLX PSMN5R2-60YL.pdf
Hersteller: NEXPERIA
PSMN5R2-60YLX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R3-25MLDX PSMN5R3-25MLD.pdf
Hersteller: NEXPERIA
PSMN5R3-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R4-25YLDX PSMN5R4-25YLD.pdf
Hersteller: NEXPERIA
PSMN5R4-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.07 EUR
38+ 1.92 EUR
46+ 1.57 EUR
49+ 1.49 EUR
500+ 1.43 EUR
Mindestbestellmenge: 35
PSMN5R6-100BS,118 PSMN5R6-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-100PS,127 PSMN5R6-100PS.pdf
PSMN5R6-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-60YLX PSMN5R6-60YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R8-40YS,115 PSMN5R8-40YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R0-25YLB,115 PSMN6R0-25YLB.pdf
Hersteller: NEXPERIA
PSMN6R0-25YLB.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-25YLDX PSMN6R0-25YLD.pdf
Hersteller: NEXPERIA
PSMN6R0-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YL,115 PSMN6R0-30YL.pdf
Hersteller: NEXPERIA
PSMN6R0-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YLDX PSMN6R0-30YLD.pdf
Hersteller: NEXPERIA
PSMN6R0-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-25MLDX PSMN6R1-25MLD.pdf
Hersteller: NEXPERIA
PSMN6R1-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-30YLDX PSMN6R1-30YLD.pdf
Hersteller: NEXPERIA
PSMN6R1-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R3-120PS PSMN6R3-120PS.pdf
Hersteller: NEXPERIA
PSMN6R3-120PS THT N channel transistors
Produkt ist nicht verfügbar
PSMN6R4-30MLDX PSMN6R4-30MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-25YLC,115 PSMN6R5-25YLC.pdf
PSMN6R5-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-80BS,118 PSMN6R5-80BS.pdf
Hersteller: NEXPERIA
PSMN6R5-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R5-80PS,127 PSMN6R5-80PS.pdf
Hersteller: NEXPERIA
PSMN6R5-80PS.127 THT N channel transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.85 EUR
37+ 1.98 EUR
39+ 1.87 EUR
Mindestbestellmenge: 26
PSMN6R7-40MLDX PSMN6R7-40MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R7-40MSDX PSMN6R7-40MSD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R9-100YSFX PSMN6R9-100YSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-100BS,118 PSMN7R0-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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