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PSMN4R3-100PS,127 PSMN4R3-100PS,127 NEXPERIA PSMN4R3-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 673A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 NEXPERIA PSMN4R3-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.65mΩ
Mounting: SMD
Gate charge: 41.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30PL,127 PSMN4R3-30PL,127 NEXPERIA PSMN4R3-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-40MLHX NEXPERIA PSMN4R3-40MLH.pdf PSMN4R3-40MLHX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R3-40MSHX NEXPERIA PSMN4R3-40MSH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 69A; Idm: 392A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PSMN4R3-80PS,127 NEXPERIA PSMN4R3-80PS.pdf PSMN4R3-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-30MLC,115 NEXPERIA PSMN4R4-30MLC.pdf PHGLS24773-1.pdf?t.download=true&u=5oefqw PSMN4R4-30MLC.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-80BS,118 PSMN4R4-80BS,118 NEXPERIA PSMN4R4-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Pulsed drain current: 680A
Power dissipation: 306W
Gate charge: 125nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 9.12mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
21+ 3.53 EUR
27+ 2.65 EUR
29+ 2.51 EUR
Mindestbestellmenge: 19
PSMN4R4-80PS,127 PSMN4R4-80PS,127 NEXPERIA PSMN4R4-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 680A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.53 EUR
18+ 3.98 EUR
Mindestbestellmenge: 16
PSMN4R5-40BS,118 NEXPERIA PSMN4R5-40BS.pdf PSMN4R5-40BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R5-40PS,127 NEXPERIA PSMN4R5-40PS.pdf PSMN4R5-40PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R6-60BS,118 NEXPERIA PSMN4R6-60BS.pdf PSMN4R6-60BS.118 SMD N channel transistors
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
45+ 1.6 EUR
48+ 1.52 EUR
Mindestbestellmenge: 32
PSMN4R6-60PS,127 PSMN4R6-60PS,127 NEXPERIA PSMN4R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100BSEJ PSMN4R8-100BSEJ NEXPERIA PSMN4R8-100BSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100PSEQ PSMN4R8-100PSEQ NEXPERIA PSMN4R8-100PSE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100YSEX NEXPERIA PSMN4R8-100YSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-100PS,127 PSMN5R0-100PS,127 NEXPERIA PSMN5R0-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MLHX NEXPERIA PSMN5R0-40MLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MSHX NEXPERIA PSMN5R0-40MSH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
PSMN5R0-80BS,118 NEXPERIA PSMN5R0-80BS.pdf PSMN5R0-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R0-80PS,127 NEXPERIA PSMN5R0-80PS.pdf PSMN5R0-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN5R2-60YLX NEXPERIA PSMN5R2-60YL.pdf PSMN5R2-60YLX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R3-25MLDX NEXPERIA PSMN5R3-25MLD.pdf PSMN5R3-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R4-25YLDX NEXPERIA PSMN5R4-25YLD.pdf PSMN5R4-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R5-60YS,115 PSMN5R5-60YS,115 NEXPERIA PSMN5R5-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2835 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.19 EUR
36+ 2.02 EUR
46+ 1.57 EUR
49+ 1.49 EUR
Mindestbestellmenge: 33
PSMN5R6-100BS,118 NEXPERIA PSMN5R6-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-100PS,127 PSMN5R6-100PS,127 NEXPERIA PSMN5R6-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-60YLX NEXPERIA PSMN5R6-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R8-40YS,115 NEXPERIA PSMN5R8-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R0-25YLB,115 NEXPERIA PSMN6R0-25YLB.pdf PSMN6R0-25YLB.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-25YLDX NEXPERIA PSMN6R0-25YLD.pdf PSMN6R0-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YL,115 NEXPERIA PSMN6R0-30YL.pdf PSMN6R0-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YLDX NEXPERIA PSMN6R0-30YLD.pdf PSMN6R0-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-25MLDX NEXPERIA PSMN6R1-25MLD.pdf PSMN6R1-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-30YLDX NEXPERIA PSMN6R1-30YLD.pdf PSMN6R1-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R3-120PS NEXPERIA PSMN6R3-120PS.pdf PSMN6R3-120PS THT N channel transistors
Produkt ist nicht verfügbar
PSMN6R4-30MLDX NEXPERIA PSMN6R4-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-25YLC,115 PSMN6R5-25YLC,115 NEXPERIA PSMN6R5-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-80BS,118 NEXPERIA PSMN6R5-80BS.pdf PSMN6R5-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R5-80PS,127 NEXPERIA PSMN6R5-80PS.pdf PSMN6R5-80PS.127 THT N channel transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.85 EUR
37+ 1.98 EUR
39+ 1.87 EUR
Mindestbestellmenge: 26
PSMN6R7-40MLDX NEXPERIA PSMN6R7-40MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R7-40MSDX NEXPERIA PSMN6R7-40MSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R9-100YSFX NEXPERIA PSMN6R9-100YSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-100BS,118 NEXPERIA PSMN7R0-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-100PS,127 PSMN7R0-100PS,127 NEXPERIA PSMN7R0-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-30MLC,115 NEXPERIA PSMN7R0-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-30YL,115 NEXPERIA PSMN7R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-30YLC,115 NEXPERIA PSMN7R0-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
91+ 0.79 EUR
100+ 0.72 EUR
134+ 0.53 EUR
142+ 0.5 EUR
Mindestbestellmenge: 64
PSMN7R0-60YS,115 PSMN7R0-60YS,115 NEXPERIA PSMN7R0-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1465 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
41+ 1.77 EUR
58+ 1.24 EUR
61+ 1.17 EUR
Mindestbestellmenge: 36
PSMN7R5-30MLDX NEXPERIA PSMN7R5-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R5-30YLDX NEXPERIA PSMN7R5-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R5-60YLX PSMN7R5-60YLX NEXPERIA PSMN7R5-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1488 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
56+ 1.29 EUR
80+ 0.9 EUR
85+ 0.84 EUR
Mindestbestellmenge: 40
PSMN7R6-100BSEJ NEXPERIA PSMN7R6-100BSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
PSMN7R6-60BS,118 PSMN7R6-60BS,118 NEXPERIA PSMN7R6-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R6-60PS,127 PSMN7R6-60PS,127 NEXPERIA PSMN7R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R8-100PSEQ PSMN7R8-100PSEQ NEXPERIA PSMN7R8-100PSE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN8R0-40BS,118 NEXPERIA PSMN8R0-40BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN8R0-40PS,127 PSMN8R0-40PS,127 NEXPERIA PSMN8R0-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.7 EUR
47+ 1.54 EUR
53+ 1.37 EUR
61+ 1.17 EUR
65+ 1.12 EUR
Mindestbestellmenge: 43
PSMN8R0-80YLX NEXPERIA Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN8R2-80YS,115 NEXPERIA PSMN8R2-80YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.93 EUR
41+ 1.74 EUR
56+ 1.3 EUR
59+ 1.23 EUR
Mindestbestellmenge: 38
PSMN4R3-100PS,127 PSMN4R3-100PS.pdf
PSMN4R3-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 673A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 673A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 PSMN4R3-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.65mΩ
Mounting: SMD
Gate charge: 41.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30PL,127 PSMN4R3-30PL.pdf
PSMN4R3-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-40MLHX PSMN4R3-40MLH.pdf
Hersteller: NEXPERIA
PSMN4R3-40MLHX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R3-40MSHX PSMN4R3-40MSH.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 69A; Idm: 392A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PSMN4R3-80PS,127 PSMN4R3-80PS.pdf
Hersteller: NEXPERIA
PSMN4R3-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-30MLC,115 PSMN4R4-30MLC.pdf PHGLS24773-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
PSMN4R4-30MLC.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R4-80BS,118 PSMN4R4-80BS.pdf
PSMN4R4-80BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Pulsed drain current: 680A
Power dissipation: 306W
Gate charge: 125nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 9.12mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.93 EUR
21+ 3.53 EUR
27+ 2.65 EUR
29+ 2.51 EUR
Mindestbestellmenge: 19
PSMN4R4-80PS,127 PSMN4R4-80PS.pdf
PSMN4R4-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 680A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.53 EUR
18+ 3.98 EUR
Mindestbestellmenge: 16
PSMN4R5-40BS,118 PSMN4R5-40BS.pdf
Hersteller: NEXPERIA
PSMN4R5-40BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN4R5-40PS,127 PSMN4R5-40PS.pdf
Hersteller: NEXPERIA
PSMN4R5-40PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
Hersteller: NEXPERIA
PSMN4R6-60BS.118 SMD N channel transistors
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
45+ 1.6 EUR
48+ 1.52 EUR
Mindestbestellmenge: 32
PSMN4R6-60PS,127 PSMN4R6-60PS.pdf
PSMN4R6-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.05mΩ
Mounting: THT
Gate charge: 70.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
PSMN4R8-100BSEJ
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 405W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 405W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 278nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100PSEQ PSMN4R8-100PSE.pdf
PSMN4R8-100PSEQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 693A
Pulsed drain current: 693A
Power dissipation: 405W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R8-100YSEX PSMN4R8-100YSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-100PS,127 PSMN5R0-100PS.pdf
PSMN5R0-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 622A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 622A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MLHX PSMN5R0-40MLH.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R0-40MSHX PSMN5R0-40MSH.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
PSMN5R0-80BS,118 PSMN5R0-80BS.pdf
Hersteller: NEXPERIA
PSMN5R0-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R0-80PS,127 PSMN5R0-80PS.pdf
Hersteller: NEXPERIA
PSMN5R0-80PS.127 THT N channel transistors
Produkt ist nicht verfügbar
PSMN5R2-60YLX PSMN5R2-60YL.pdf
Hersteller: NEXPERIA
PSMN5R2-60YLX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R3-25MLDX PSMN5R3-25MLD.pdf
Hersteller: NEXPERIA
PSMN5R3-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R4-25YLDX PSMN5R4-25YLD.pdf
Hersteller: NEXPERIA
PSMN5R4-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.19 EUR
36+ 2.02 EUR
46+ 1.57 EUR
49+ 1.49 EUR
Mindestbestellmenge: 33
PSMN5R6-100BS,118 PSMN5R6-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-100PS,127 PSMN5R6-100PS.pdf
PSMN5R6-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-60YLX PSMN5R6-60YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 405A
Power dissipation: 167W
Gate charge: 66.8nC
Features of semiconductor devices: logic level
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 16.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R8-40YS,115 PSMN5R8-40YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; Idm: 360A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 28.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R0-25YLB,115 PSMN6R0-25YLB.pdf
Hersteller: NEXPERIA
PSMN6R0-25YLB.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-25YLDX PSMN6R0-25YLD.pdf
Hersteller: NEXPERIA
PSMN6R0-25YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YL,115 PSMN6R0-30YL.pdf
Hersteller: NEXPERIA
PSMN6R0-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R0-30YLDX PSMN6R0-30YLD.pdf
Hersteller: NEXPERIA
PSMN6R0-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-25MLDX PSMN6R1-25MLD.pdf
Hersteller: NEXPERIA
PSMN6R1-25MLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R1-30YLDX PSMN6R1-30YLD.pdf
Hersteller: NEXPERIA
PSMN6R1-30YLDX SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R3-120PS PSMN6R3-120PS.pdf
Hersteller: NEXPERIA
PSMN6R3-120PS THT N channel transistors
Produkt ist nicht verfügbar
PSMN6R4-30MLDX PSMN6R4-30MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 47A; Idm: 264A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 51W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-25YLC,115 PSMN6R5-25YLC.pdf
PSMN6R5-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R5-80BS,118 PSMN6R5-80BS.pdf
Hersteller: NEXPERIA
PSMN6R5-80BS.118 SMD N channel transistors
Produkt ist nicht verfügbar
PSMN6R5-80PS,127 PSMN6R5-80PS.pdf
Hersteller: NEXPERIA
PSMN6R5-80PS.127 THT N channel transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.85 EUR
37+ 1.98 EUR
39+ 1.87 EUR
Mindestbestellmenge: 26
PSMN6R7-40MLDX PSMN6R7-40MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R7-40MSDX PSMN6R7-40MSD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 50A; Idm: 282A
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN6R9-100YSFX PSMN6R9-100YSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; Idm: 360A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Pulsed drain current: 360A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 50.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-100BS,118 PSMN7R0-100BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-100PS,127 PSMN7R0-100PS.pdf
PSMN7R0-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-30MLC,115 PSMN7R0-30MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-30YL,115 PSMN7R0-30YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
91+ 0.79 EUR
100+ 0.72 EUR
134+ 0.53 EUR
142+ 0.5 EUR
Mindestbestellmenge: 64
PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1465 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
41+ 1.77 EUR
58+ 1.24 EUR
61+ 1.17 EUR
Mindestbestellmenge: 36
PSMN7R5-30MLDX PSMN7R5-30MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R5-30YLDX PSMN7R5-30YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R5-60YLX PSMN7R5-60YL.pdf
PSMN7R5-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1488 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.79 EUR
56+ 1.29 EUR
80+ 0.9 EUR
85+ 0.84 EUR
Mindestbestellmenge: 40
PSMN7R6-100BSEJ PSMN7R6-100BSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
PSMN7R6-60BS,118 PSMN7R6-60BS.pdf
PSMN7R6-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R6-60PS,127 PSMN7R6-60PS.pdf
PSMN7R6-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN7R8-100PSEQ PSMN7R8-100PSE.pdf
PSMN7R8-100PSEQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN8R0-40BS,118 PSMN8R0-40BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.7 EUR
47+ 1.54 EUR
53+ 1.37 EUR
61+ 1.17 EUR
65+ 1.12 EUR
Mindestbestellmenge: 43
PSMN8R0-80YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN8R2-80YS,115 PSMN8R2-80YS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.93 EUR
41+ 1.74 EUR
56+ 1.3 EUR
59+ 1.23 EUR
Mindestbestellmenge: 38
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