| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PMN40SNAX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 76mΩ Pulsed drain current: 19A Gate charge: 14nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN42XPEAH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN42XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PMN48XP,115 | NEXPERIA |
PMN48XP.115 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMN48XP,125 | NEXPERIA |
PMN48XP.125 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMN48XPAX | NEXPERIA |
PMN48XPAX SMD P channel transistors |
Produkt ist nicht verfügbar |
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PMN50EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN52XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -15A Case: SC74; SOT457; TSOP6 On-state resistance: 91mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMN55ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMN70XPX | NEXPERIA |
PMN70XPX SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMP4201V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| PMP4501V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Mounting: SMD Application: automotive industry Case: SOT666 Collector-emitter voltage: 45V Polarisation: bipolar Kind of package: reel; tape Pulsed collector current: 0.2A Collector current: 0.1A Frequency: 250MHz Current gain: 200...450 Type of transistor: NPN x2 Power dissipation: 0.3W Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| PMP5201V,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT666 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMP5201Y,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1645 Stücke: Lieferzeit 7-14 Tag (e) |
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PMP5201Y,135 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| PMP5501V,115 | NEXPERIA |
PMP5501V.115 PNP SMD transistors |
Produkt ist nicht verfügbar |
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PMP5501Y,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PMPB100XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -13A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: -20V Drain current: -2A On-state resistance: 191mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB10XNE,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB10XNEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 34nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 36A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 21mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB10XNX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 30nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 38A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: 30V Drain current: 6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB11EN,115 | NEXPERIA |
PMPB11EN.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB12UNEAX | NEXPERIA |
PMPB12UNEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB12UNEX | NEXPERIA |
PMPB12UNEX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB13XNE,115 | NEXPERIA |
PMPB13XNE.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB13XNEAX | NEXPERIA | PMPB13XNEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB14XNX | NEXPERIA |
PMPB14XNX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB14XPX | NEXPERIA |
PMPB14XPX SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB15XN,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 4.6A On-state resistance: 32mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 20.2nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB15XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PMPB15XPAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB15XPH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -33A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB16EPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.7A Pulsed drain current: -30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±25V On-state resistance: 34mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB19XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Pulsed drain current: -30A Gate charge: 43.2nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 On-state resistance: 33mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PMPB20EN,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB20ENZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB20XPE,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Mounting: SMD Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 33mΩ Pulsed drain current: -30A Gate charge: 45nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB20XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A; 1.7W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -30A Power dissipation: 1.7W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB215ENEA/FX | NEXPERIA |
PMPB215ENEA/FX SMD N channel transistors |
auf Bestellung 2863 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMPB215ENEAX | NEXPERIA |
PMPB215ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB23XNE,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.4A; Idm: 24A Case: DFN2020MD-6; SOT1220 Drain-source voltage: 20V Drain current: 4.4A On-state resistance: 34mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB24EPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -26A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB27EP,115 | NEXPERIA |
PMPB27EP.115 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB27EPAX | NEXPERIA |
PMPB27EPAX SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB29XPE,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -12A Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Mounting: SMD Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 46mΩ Pulsed drain current: -12A Gate charge: 45nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -3.2A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB29XPEAX | NEXPERIA |
PMPB29XPEAX SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB30XPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A Mounting: SMD Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 19nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB33XP,115 | NEXPERIA |
PMPB33XP.115 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB43XPE,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -12A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±12V On-state resistance: 68mΩ Mounting: SMD Gate charge: 23.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PMPB47XP,115 | NEXPERIA |
PMPB47XP.115 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB48EP,115 | NEXPERIA |
PMPB48EP.115 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB48EPAX | NEXPERIA |
PMPB48EPAX SMD P channel transistors |
Produkt ist nicht verfügbar |
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| PMPB55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 1.65W Case: DFN2020MD-6; SOT1220 On-state resistance: 106mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PMPB55XNEAX | NEXPERIA |
PMPB55XNEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB85ENEA/FX | NEXPERIA |
PMPB85ENEA/FX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB85ENEAX | NEXPERIA |
PMPB85ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB8XNX | NEXPERIA |
PMPB8XNX SMD N channel transistors |
Produkt ist nicht verfügbar |
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| PMPB95ENEA/FX | NEXPERIA |
PMPB95ENEA/FX SMD N channel transistors |
Produkt ist nicht verfügbar |
| PMN40SNAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN42XPEAH |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN42XPEAX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMN50EPEX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN52XPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PMN55ENEAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN55ENEH |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMN55ENEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMP4201V,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 4000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
| PMP4501V,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Mounting: SMD
Application: automotive industry
Case: SOT666
Collector-emitter voltage: 45V
Polarisation: bipolar
Kind of package: reel; tape
Pulsed collector current: 0.2A
Collector current: 0.1A
Frequency: 250MHz
Current gain: 200...450
Type of transistor: NPN x2
Power dissipation: 0.3W
Anzahl je Verpackung: 4000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Mounting: SMD
Application: automotive industry
Case: SOT666
Collector-emitter voltage: 45V
Polarisation: bipolar
Kind of package: reel; tape
Pulsed collector current: 0.2A
Collector current: 0.1A
Frequency: 250MHz
Current gain: 200...450
Type of transistor: NPN x2
Power dissipation: 0.3W
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
| PMP5201V,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMP5201Y,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1645 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 246+ | 0.29 EUR |
| 314+ | 0.23 EUR |
| 332+ | 0.22 EUR |
| PMP5201Y,135 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 10000 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| PMP5501Y,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMPB100XPEAX |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB10XNE,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB10XNEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5.7A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 34nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 36A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB10XNX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 6A; Idm: 38A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 30nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 38A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB13XNE,115 |
|
Hersteller: NEXPERIA
PMPB13XNE.115 SMD N channel transistors
PMPB13XNE.115 SMD N channel transistors
Produkt ist nicht verfügbar
| PMPB15XN,115 |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.6A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 20.2nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.6A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 20.2nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB15XP,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMPB15XPAX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB15XPH |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -5.2A; Idm: -33A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -33A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB16EPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB19XP,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Pulsed drain current: -30A
Gate charge: 43.2nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 33mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMPB20EN,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB20ENZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.6A
Pulsed drain current: 30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB20XPE,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Pulsed drain current: -30A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Pulsed drain current: -30A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -4.5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB20XPEAX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A; 1.7W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -30A
Power dissipation: 1.7W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB215ENEA/FX |
|
Hersteller: NEXPERIA
PMPB215ENEA/FX SMD N channel transistors
PMPB215ENEA/FX SMD N channel transistors
auf Bestellung 2863 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 197+ | 0.36 EUR |
| 275+ | 0.26 EUR |
| 291+ | 0.25 EUR |
| 3000+ | 0.24 EUR |
| PMPB23XNE,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.4A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.4A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.4A; Idm: 24A
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 20V
Drain current: 4.4A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB24EPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -26A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -26A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB29XPE,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -12A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Pulsed drain current: -12A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -3.2A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -12A
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Pulsed drain current: -12A
Gate charge: 45nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: -3.2A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB30XPEX |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB43XPE,115 |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -12A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -12A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PMPB55ENEAX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PMPB85ENEA/FX |
|
Hersteller: NEXPERIA
PMPB85ENEA/FX SMD N channel transistors
PMPB85ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
| PMPB95ENEA/FX |
|
Hersteller: NEXPERIA
PMPB95ENEA/FX SMD N channel transistors
PMPB95ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar