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PMPB48EPAX NEXPERIA PMPB48EPA.pdf PMPB48EPAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB55ENEAX NEXPERIA PMPB55ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB55XNEAX NEXPERIA PMPB55XNEA.pdf PMPB55XNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEA/FX NEXPERIA PMPB85ENEA.pdf PMPB85ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEAX NEXPERIA PMPB85ENEA.pdf PMPB85ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB8XNX NEXPERIA PMPB8XN.pdf PMPB8XNX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEA/FX NEXPERIA PMPB95ENEA.pdf PMPB95ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEAX NEXPERIA PMPB95ENEA.pdf PMPB95ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMSS3904,115 PMSS3904,115 NEXPERIA PMSS3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMSS3906,115 PMSS3906,115 NEXPERIA PMSS3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: PNP
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2222A,115 PMST2222A,115 NEXPERIA PMST2222_2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2369,115 PMST2369,115 NEXPERIA PMST2369.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
995+0.072 EUR
1105+ 0.065 EUR
1410+ 0.051 EUR
1490+ 0.048 EUR
Mindestbestellmenge: 995
PMST3904,115 PMST3904,115 NEXPERIA PMST3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Mounting: SMD
Application: automotive industry
Case: SC70; SOT323
Polarisation: bipolar
Power dissipation: 200mW
Frequency: 300MHz
Type of transistor: NPN
Collector-emitter voltage: 40V
Collector current: 0.2A
Current gain: 300
Kind of package: reel; tape
auf Bestellung 2135 Stücke:
Lieferzeit 7-14 Tag (e)
1429+0.05 EUR
2135+ 0.033 EUR
3000+ 0.024 EUR
Mindestbestellmenge: 1429
PMST5551,115 PMST5551,115 NEXPERIA PMST5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Mounting: SMD
Collector-emitter voltage: 160V
Collector current: 0.3A
Case: SC70; SOT323
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 250
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
630+0.11 EUR
830+ 0.087 EUR
920+ 0.078 EUR
1210+ 0.06 EUR
1270+ 0.056 EUR
Mindestbestellmenge: 630
PMSTA06,115 NEXPERIA PMSTA05_06.pdf PMSTA06.115 NPN SMD transistors
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
1134+0.063 EUR
1240+ 0.057 EUR
12000+ 0.042 EUR
Mindestbestellmenge: 1134
PMSTA56,115 NEXPERIA PMSTA55_56.pdf PMSTA56.115 PNP SMD transistors
Produkt ist nicht verfügbar
PMT200EPEX PMT200EPEX NEXPERIA PMT200EPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
PMT280ENEAX NEXPERIA PMT280ENEA.pdf PMT280ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMT560ENEAX PMT560ENEAX NEXPERIA PMT560ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223
Case: SC73; SOT223
Mounting: SMD
Pulsed drain current: 4.4A
Gate charge: 4.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 1.62Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100ENEAR PMV100ENEAR NEXPERIA PMV100ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100EPAR PMV100EPAR NEXPERIA PMV100EPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.4A
Pulsed drain current: -9A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV100XPEAR PMV100XPEAR NEXPERIA PMV100XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -10A
Case: SOT23; TO236AB
On-state resistance: 187mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMV120ENEAR NEXPERIA PMV120ENEA.pdf PMV120ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV130ENEAR PMV130ENEAR NEXPERIA PMV130ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1262 Stücke:
Lieferzeit 7-14 Tag (e)
319+0.22 EUR
365+ 0.2 EUR
407+ 0.18 EUR
523+ 0.14 EUR
554+ 0.13 EUR
Mindestbestellmenge: 319
PMV13XNEAR PMV13XNEAR NEXPERIA PMV13XNEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 30A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV15ENEAR NEXPERIA PMV15ENEA.pdf PMV15ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV15UNEAR NEXPERIA PMV15UNEA.pdf PMV15UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV160UP,215 PMV160UP,215 NEXPERIA PMV160UP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4974 Stücke:
Lieferzeit 7-14 Tag (e)
275+0.26 EUR
506+ 0.14 EUR
562+ 0.13 EUR
747+ 0.096 EUR
789+ 0.091 EUR
Mindestbestellmenge: 275
PMV164ENEAR NEXPERIA PMV164ENEA.pdf PMV164ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV19XNEAR PMV19XNEAR NEXPERIA PMV19XNEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 3.8A; Idm: 24A
Pulsed drain current: 24A
Gate charge: 18.6nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV20ENR PMV20ENR NEXPERIA PMV20EN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.8A; 1.2W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2878 Stücke:
Lieferzeit 7-14 Tag (e)
285+0.25 EUR
379+ 0.19 EUR
421+ 0.17 EUR
555+ 0.13 EUR
588+ 0.12 EUR
Mindestbestellmenge: 285
PMV20XNER PMV20XNER NEXPERIA PMV20XNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 24A
Case: SOT23; TO236AB
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3417 Stücke:
Lieferzeit 7-14 Tag (e)
262+0.27 EUR
291+ 0.25 EUR
385+ 0.19 EUR
407+ 0.18 EUR
Mindestbestellmenge: 262
PMV213SN,215 PMV213SN,215 NEXPERIA PMV213SN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; Idm: 7.6A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 7.6A
Power dissipation: 2W
Case: SOT23; TO236AB
Gate-source voltage: ±30V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6215 Stücke:
Lieferzeit 7-14 Tag (e)
190+0.38 EUR
200+ 0.36 EUR
275+ 0.26 EUR
290+ 0.25 EUR
Mindestbestellmenge: 190
PMV230ENEAR NEXPERIA PMV230ENEA.pdf PMV230ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV240SPR PMV240SPR NEXPERIA PMV240SP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV250EPEAR PMV250EPEAR NEXPERIA PMV250EPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -1A
Power dissipation: 0.89W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2745 Stücke:
Lieferzeit 7-14 Tag (e)
330+0.22 EUR
445+ 0.16 EUR
490+ 0.15 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 330
PMV25ENEAR PMV25ENEAR NEXPERIA PMV25ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 22A
Case: SOT23; TO236AB
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV27UPEAR PMV27UPEAR NEXPERIA PMV27UPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV27UPER PMV27UPER NEXPERIA PMV27UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV280ENEAR PMV280ENEAR NEXPERIA PMV280ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; Idm: 5A; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 5A
Gate charge: 6.8nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.8A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: SOT23; TO236AB
On-state resistance: 1078mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1595 Stücke:
Lieferzeit 7-14 Tag (e)
184+0.39 EUR
350+ 0.2 EUR
391+ 0.18 EUR
491+ 0.15 EUR
520+ 0.14 EUR
Mindestbestellmenge: 184
PMV28ENEAR NEXPERIA PMV28ENEA.pdf PMV28ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28UNEAR NEXPERIA PMV28UNEA.pdf PMV28UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28XPEAR PMV28XPEAR NEXPERIA PMV28XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30ENEAR NEXPERIA PMV30ENEA.pdf PMV30ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV30UN2R PMV30UN2R NEXPERIA PMV30UN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7205 Stücke:
Lieferzeit 7-14 Tag (e)
237+0.3 EUR
394+ 0.18 EUR
443+ 0.16 EUR
607+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 237
PMV30UN2VL PMV30UN2VL NEXPERIA PMV30UN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPAR NEXPERIA PMV30XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30XPEAR NEXPERIA PMV30XPEA.pdf PMV30XPEAR SMD P channel transistors
auf Bestellung 2007 Stücke:
Lieferzeit 7-14 Tag (e)
166+0.43 EUR
363+ 0.2 EUR
383+ 0.19 EUR
Mindestbestellmenge: 166
PMV32UP,215 PMV32UP,215 NEXPERIA PMV32UP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB
Power dissipation: 930mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT23; TO236AB
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 73mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV35EPER PMV35EPER NEXPERIA PMV35EPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -17A
Case: SOT23; TO236AB
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)
140+0.53 EUR
160+ 0.46 EUR
230+ 0.31 EUR
245+ 0.3 EUR
Mindestbestellmenge: 140
PMV37EN2R PMV37EN2R NEXPERIA PMV37EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV37ENEAR PMV37ENEAR NEXPERIA PMV37ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV40UN2R PMV40UN2R NEXPERIA PMV40UN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 1W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2125 Stücke:
Lieferzeit 7-14 Tag (e)
249+0.29 EUR
407+ 0.18 EUR
447+ 0.16 EUR
593+ 0.12 EUR
626+ 0.11 EUR
Mindestbestellmenge: 249
PMV42ENER NEXPERIA PMV42ENE.pdf PMV42ENER SMD N channel transistors
Produkt ist nicht verfügbar
PMV45EN2R PMV45EN2R NEXPERIA PMV45EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9734 Stücke:
Lieferzeit 7-14 Tag (e)
254+0.28 EUR
428+ 0.17 EUR
472+ 0.15 EUR
614+ 0.12 EUR
649+ 0.11 EUR
Mindestbestellmenge: 254
PMV45EN2VL PMV45EN2VL NEXPERIA PMV45EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV48XP,215 PMV48XP,215 NEXPERIA PMV48XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
225+ 0.32 EUR
305+ 0.24 EUR
325+ 0.22 EUR
Mindestbestellmenge: 200
PMV48XPA2R PMV48XPA2R NEXPERIA PMV48XPA2.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV48XPAR PMV48XPAR NEXPERIA PMV48XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV48XPVL PMV48XPVL NEXPERIA PMV48XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMPB48EPAX PMPB48EPA.pdf
Hersteller: NEXPERIA
PMPB48EPAX SMD P channel transistors
Produkt ist nicht verfügbar
PMPB55ENEAX PMPB55ENEA.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB55XNEAX PMPB55XNEA.pdf
Hersteller: NEXPERIA
PMPB55XNEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEA/FX PMPB85ENEA.pdf
Hersteller: NEXPERIA
PMPB85ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB85ENEAX PMPB85ENEA.pdf
Hersteller: NEXPERIA
PMPB85ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB8XNX PMPB8XN.pdf
Hersteller: NEXPERIA
PMPB8XNX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEA/FX PMPB95ENEA.pdf
Hersteller: NEXPERIA
PMPB95ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEAX PMPB95ENEA.pdf
Hersteller: NEXPERIA
PMPB95ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMSS3904,115 PMSS3904.pdf
PMSS3904,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMSS3906,115 PMSS3906.pdf
PMSS3906,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: PNP
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2222A,115 PMST2222_2222A.pdf
PMST2222A,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2369,115 PMST2369.pdf
PMST2369,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
995+0.072 EUR
1105+ 0.065 EUR
1410+ 0.051 EUR
1490+ 0.048 EUR
Mindestbestellmenge: 995
PMST3904,115 PMST3904.pdf
PMST3904,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Mounting: SMD
Application: automotive industry
Case: SC70; SOT323
Polarisation: bipolar
Power dissipation: 200mW
Frequency: 300MHz
Type of transistor: NPN
Collector-emitter voltage: 40V
Collector current: 0.2A
Current gain: 300
Kind of package: reel; tape
auf Bestellung 2135 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1429+0.05 EUR
2135+ 0.033 EUR
3000+ 0.024 EUR
Mindestbestellmenge: 1429
PMST5551,115 PMST5551.pdf
PMST5551,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Mounting: SMD
Collector-emitter voltage: 160V
Collector current: 0.3A
Case: SC70; SOT323
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 250
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
630+0.11 EUR
830+ 0.087 EUR
920+ 0.078 EUR
1210+ 0.06 EUR
1270+ 0.056 EUR
Mindestbestellmenge: 630
PMSTA06,115 PMSTA05_06.pdf
Hersteller: NEXPERIA
PMSTA06.115 NPN SMD transistors
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1134+0.063 EUR
1240+ 0.057 EUR
12000+ 0.042 EUR
Mindestbestellmenge: 1134
PMSTA56,115 PMSTA55_56.pdf
Hersteller: NEXPERIA
PMSTA56.115 PNP SMD transistors
Produkt ist nicht verfügbar
PMT200EPEX PMT200EPE.pdf
PMT200EPEX
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
PMT280ENEAX PMT280ENEA.pdf
Hersteller: NEXPERIA
PMT280ENEAX SMD N channel transistors
Produkt ist nicht verfügbar
PMT560ENEAX PMT560ENEA.pdf
PMT560ENEAX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223
Case: SC73; SOT223
Mounting: SMD
Pulsed drain current: 4.4A
Gate charge: 4.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 1.62Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100ENEAR PMV100ENEA.pdf
PMV100ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100EPAR PMV100EPA.pdf
PMV100EPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.4A
Pulsed drain current: -9A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV100XPEAR PMV100XPEA.pdf
PMV100XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -10A
Case: SOT23; TO236AB
On-state resistance: 187mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMV120ENEAR PMV120ENEA.pdf
Hersteller: NEXPERIA
PMV120ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV130ENEAR PMV130ENEA.pdf
PMV130ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1262 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
319+0.22 EUR
365+ 0.2 EUR
407+ 0.18 EUR
523+ 0.14 EUR
554+ 0.13 EUR
Mindestbestellmenge: 319
PMV13XNEAR PMV13XNEA.pdf
PMV13XNEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 30A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV15ENEAR PMV15ENEA.pdf
Hersteller: NEXPERIA
PMV15ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV15UNEAR PMV15UNEA.pdf
Hersteller: NEXPERIA
PMV15UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV160UP,215 PMV160UP.pdf
PMV160UP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4974 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
275+0.26 EUR
506+ 0.14 EUR
562+ 0.13 EUR
747+ 0.096 EUR
789+ 0.091 EUR
Mindestbestellmenge: 275
PMV164ENEAR PMV164ENEA.pdf
Hersteller: NEXPERIA
PMV164ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV19XNEAR PMV19XNEA.pdf
PMV19XNEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 3.8A; Idm: 24A
Pulsed drain current: 24A
Gate charge: 18.6nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV20ENR PMV20EN.pdf
PMV20ENR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.8A; 1.2W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2878 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
285+0.25 EUR
379+ 0.19 EUR
421+ 0.17 EUR
555+ 0.13 EUR
588+ 0.12 EUR
Mindestbestellmenge: 285
PMV20XNER PMV20XNE.pdf
PMV20XNER
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 24A
Case: SOT23; TO236AB
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3417 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
262+0.27 EUR
291+ 0.25 EUR
385+ 0.19 EUR
407+ 0.18 EUR
Mindestbestellmenge: 262
PMV213SN,215 PMV213SN.pdf
PMV213SN,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; Idm: 7.6A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 7.6A
Power dissipation: 2W
Case: SOT23; TO236AB
Gate-source voltage: ±30V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6215 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
190+0.38 EUR
200+ 0.36 EUR
275+ 0.26 EUR
290+ 0.25 EUR
Mindestbestellmenge: 190
PMV230ENEAR PMV230ENEA.pdf
Hersteller: NEXPERIA
PMV230ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV240SPR PMV240SP.pdf
PMV240SPR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV250EPEAR PMV250EPEA.pdf
PMV250EPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -1A
Power dissipation: 0.89W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2745 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
330+0.22 EUR
445+ 0.16 EUR
490+ 0.15 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 330
PMV25ENEAR PMV25ENEA.pdf
PMV25ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 22A
Case: SOT23; TO236AB
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV27UPEAR PMV27UPEA.pdf
PMV27UPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV27UPER PMV27UPE.pdf
PMV27UPER
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV280ENEAR PMV280ENEA.pdf
PMV280ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; Idm: 5A; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 5A
Gate charge: 6.8nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.8A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: SOT23; TO236AB
On-state resistance: 1078mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1595 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
184+0.39 EUR
350+ 0.2 EUR
391+ 0.18 EUR
491+ 0.15 EUR
520+ 0.14 EUR
Mindestbestellmenge: 184
PMV28ENEAR PMV28ENEA.pdf
Hersteller: NEXPERIA
PMV28ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28UNEAR PMV28UNEA.pdf
Hersteller: NEXPERIA
PMV28UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28XPEAR PMV28XPEA.pdf
PMV28XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30ENEAR PMV30ENEA.pdf
Hersteller: NEXPERIA
PMV30ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV30UN2R PMV30UN2.pdf
PMV30UN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
237+0.3 EUR
394+ 0.18 EUR
443+ 0.16 EUR
607+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 237
PMV30UN2VL PMV30UN2.pdf
PMV30UN2VL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPA.pdf
PMV30XPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30XPEAR PMV30XPEA.pdf
Hersteller: NEXPERIA
PMV30XPEAR SMD P channel transistors
auf Bestellung 2007 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
166+0.43 EUR
363+ 0.2 EUR
383+ 0.19 EUR
Mindestbestellmenge: 166
PMV32UP,215 PMV32UP.pdf
PMV32UP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB
Power dissipation: 930mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT23; TO236AB
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 73mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV35EPER PMV35EPE.pdf
PMV35EPER
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -17A
Case: SOT23; TO236AB
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
140+0.53 EUR
160+ 0.46 EUR
230+ 0.31 EUR
245+ 0.3 EUR
Mindestbestellmenge: 140
PMV37EN2R PMV37EN2.pdf
PMV37EN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV37ENEAR PMV37ENEA.pdf
PMV37ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV40UN2R PMV40UN2.pdf
PMV40UN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 1W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
249+0.29 EUR
407+ 0.18 EUR
447+ 0.16 EUR
593+ 0.12 EUR
626+ 0.11 EUR
Mindestbestellmenge: 249
PMV42ENER PMV42ENE.pdf
Hersteller: NEXPERIA
PMV42ENER SMD N channel transistors
Produkt ist nicht verfügbar
PMV45EN2R PMV45EN2.pdf
PMV45EN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9734 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
254+0.28 EUR
428+ 0.17 EUR
472+ 0.15 EUR
614+ 0.12 EUR
649+ 0.11 EUR
Mindestbestellmenge: 254
PMV45EN2VL PMV45EN2.pdf
PMV45EN2VL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV48XP,215 PMV48XP.pdf
PMV48XP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
225+ 0.32 EUR
305+ 0.24 EUR
325+ 0.22 EUR
Mindestbestellmenge: 200
PMV48XPA2R PMV48XPA2.pdf
PMV48XPA2R
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV48XPAR PMV48XPA.pdf
PMV48XPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV48XPVL PMV48XP.pdf
PMV48XPVL
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
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