Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PMPB48EPAX | NEXPERIA | PMPB48EPAX SMD P channel transistors |
Produkt ist nicht verfügbar |
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PMPB55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 1.65W Case: DFN2020MD-6; SOT1220 On-state resistance: 106mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMPB55XNEAX | NEXPERIA | PMPB55XNEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMPB85ENEA/FX | NEXPERIA | PMPB85ENEA/FX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMPB85ENEAX | NEXPERIA | PMPB85ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMPB8XNX | NEXPERIA | PMPB8XNX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMPB95ENEA/FX | NEXPERIA | PMPB95ENEA/FX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMPB95ENEAX | NEXPERIA | PMPB95ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMSS3904,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Power dissipation: 0.2W Collector-emitter voltage: 40V Current gain: 30...300 Collector current: 0.1A Type of transistor: NPN Polarisation: bipolar Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMSS3906,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Power dissipation: 0.2W Collector-emitter voltage: 40V Current gain: 30...300 Collector current: 0.1A Type of transistor: PNP Polarisation: bipolar Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMST2222A,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMST2369,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 20...120 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2600 Stücke: Lieferzeit 7-14 Tag (e) |
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PMST3904,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323 Mounting: SMD Application: automotive industry Case: SC70; SOT323 Polarisation: bipolar Power dissipation: 200mW Frequency: 300MHz Type of transistor: NPN Collector-emitter voltage: 40V Collector current: 0.2A Current gain: 300 Kind of package: reel; tape |
auf Bestellung 2135 Stücke: Lieferzeit 7-14 Tag (e) |
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PMST5551,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323 Mounting: SMD Collector-emitter voltage: 160V Collector current: 0.3A Case: SC70; SOT323 Power dissipation: 0.2W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 250 Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
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PMSTA06,115 | NEXPERIA | PMSTA06.115 NPN SMD transistors |
auf Bestellung 1240 Stücke: Lieferzeit 7-14 Tag (e) |
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PMSTA56,115 | NEXPERIA | PMSTA56.115 PNP SMD transistors |
Produkt ist nicht verfügbar |
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PMT200EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 15.9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9.7A Drain-source voltage: -70V Drain current: -1.5A On-state resistance: 0.25Ω Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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PMT280ENEAX | NEXPERIA | PMT280ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMT560ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223 Case: SC73; SOT223 Mounting: SMD Pulsed drain current: 4.4A Gate charge: 4.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate; logic level Drain current: 0.7A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 1.62Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV100ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 12A Case: SOT23; TO236AB On-state resistance: 0.118Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV100EPAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.4A Pulsed drain current: -9A Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV100XPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -10A Case: SOT23; TO236AB On-state resistance: 187mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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PMV120ENEAR | NEXPERIA | PMV120ENEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV130ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 1.5A Pulsed drain current: 8A Case: SOT23; TO236AB On-state resistance: 233mΩ Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1262 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV13XNEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.6A Pulsed drain current: 30A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV15ENEAR | NEXPERIA | PMV15ENEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV15UNEAR | NEXPERIA | PMV15UNEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV160UP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.8A Power dissipation: 0.48W Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4974 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV164ENEAR | NEXPERIA | PMV164ENEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV19XNEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 3.8A; Idm: 24A Pulsed drain current: 24A Gate charge: 18.6nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 3.8A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 48mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV20ENR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.8A; 1.2W; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.8A Power dissipation: 1.2W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2878 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV20XNER | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Pulsed drain current: 24A Case: SOT23; TO236AB On-state resistance: 37mΩ Mounting: SMD Gate charge: 18.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3417 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV213SN,215 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; Idm: 7.6A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.2A Pulsed drain current: 7.6A Power dissipation: 2W Case: SOT23; TO236AB Gate-source voltage: ±30V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 6215 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV230ENEAR | NEXPERIA | PMV230ENEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV240SPR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.8A Pulsed drain current: -5A Case: SOT23; TO236AB Gate-source voltage: ±25V On-state resistance: 840mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV250EPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -1A Power dissipation: 0.89W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2745 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV25ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 22A Case: SOT23; TO236AB On-state resistance: 39mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV27UPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -18A Case: SOT23; TO236AB On-state resistance: 48mΩ Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV27UPER | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -18A Case: SOT23; TO236AB On-state resistance: 48mΩ Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV280ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; Idm: 5A; SOT23,TO236AB Kind of package: reel; tape Mounting: SMD Pulsed drain current: 5A Gate charge: 6.8nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate; logic level Drain current: 0.8A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Case: SOT23; TO236AB On-state resistance: 1078mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1595 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV28ENEAR | NEXPERIA | PMV28ENEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV28UNEAR | NEXPERIA | PMV28UNEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV28XPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Pulsed drain current: -20A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV30ENEAR | NEXPERIA | PMV30ENEAR SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV30UN2R | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Pulsed drain current: 18A Case: SOT23; TO236AB On-state resistance: 50mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7205 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV30UN2VL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Pulsed drain current: 18A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMV30XPAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -20A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV30XPEAR | NEXPERIA | PMV30XPEAR SMD P channel transistors |
auf Bestellung 2007 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV32UP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB Power dissipation: 930mW Mounting: SMD Kind of package: reel; tape Case: SOT23; TO236AB Drain-source voltage: -20V Drain current: -2.5A On-state resistance: 73mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV35EPER | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -17A Case: SOT23; TO236AB On-state resistance: 67mΩ Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2370 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV37EN2R | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A Pulsed drain current: 16A Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV37ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Pulsed drain current: 14A Gate charge: 13nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 106mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV40UN2R | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.3A Power dissipation: 1W Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 78mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2125 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV42ENER | NEXPERIA | PMV42ENER SMD N channel transistors |
Produkt ist nicht verfügbar |
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PMV45EN2R | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1115mW Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9734 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV45EN2VL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PMV48XP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3120 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV48XPA2R | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 78mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV48XPAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: SOT23; TO236AB On-state resistance: 80mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PMV48XPVL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
PMPB55ENEAX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 16A; 1.65W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 1.65W
Case: DFN2020MD-6; SOT1220
On-state resistance: 106mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMPB85ENEA/FX |
Hersteller: NEXPERIA
PMPB85ENEA/FX SMD N channel transistors
PMPB85ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMPB95ENEA/FX |
Hersteller: NEXPERIA
PMPB95ENEA/FX SMD N channel transistors
PMPB95ENEA/FX SMD N channel transistors
Produkt ist nicht verfügbar
PMSS3904,115 |
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMSS3906,115 |
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: PNP
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.1A
Type of transistor: PNP
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2222A,115 |
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMST2369,115 |
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
995+ | 0.072 EUR |
1105+ | 0.065 EUR |
1410+ | 0.051 EUR |
1490+ | 0.048 EUR |
PMST3904,115 |
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Mounting: SMD
Application: automotive industry
Case: SC70; SOT323
Polarisation: bipolar
Power dissipation: 200mW
Frequency: 300MHz
Type of transistor: NPN
Collector-emitter voltage: 40V
Collector current: 0.2A
Current gain: 300
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SC70,SOT323
Mounting: SMD
Application: automotive industry
Case: SC70; SOT323
Polarisation: bipolar
Power dissipation: 200mW
Frequency: 300MHz
Type of transistor: NPN
Collector-emitter voltage: 40V
Collector current: 0.2A
Current gain: 300
Kind of package: reel; tape
auf Bestellung 2135 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1429+ | 0.05 EUR |
2135+ | 0.033 EUR |
3000+ | 0.024 EUR |
PMST5551,115 |
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Mounting: SMD
Collector-emitter voltage: 160V
Collector current: 0.3A
Case: SC70; SOT323
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 250
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Mounting: SMD
Collector-emitter voltage: 160V
Collector current: 0.3A
Case: SC70; SOT323
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 250
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
630+ | 0.11 EUR |
830+ | 0.087 EUR |
920+ | 0.078 EUR |
1210+ | 0.06 EUR |
1270+ | 0.056 EUR |
PMSTA06,115 |
Hersteller: NEXPERIA
PMSTA06.115 NPN SMD transistors
PMSTA06.115 NPN SMD transistors
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1134+ | 0.063 EUR |
1240+ | 0.057 EUR |
12000+ | 0.042 EUR |
PMT200EPEX |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
PMT560ENEAX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223
Case: SC73; SOT223
Mounting: SMD
Pulsed drain current: 4.4A
Gate charge: 4.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 1.62Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 700mA; Idm: 4.4A; SC73,SOT223
Case: SC73; SOT223
Mounting: SMD
Pulsed drain current: 4.4A
Gate charge: 4.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.7A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 1.62Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100ENEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV100EPAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.4A
Pulsed drain current: -9A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.4A; Idm: -9A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.4A
Pulsed drain current: -9A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV100XPEAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -10A
Case: SOT23; TO236AB
On-state resistance: 187mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -10A
Case: SOT23; TO236AB
On-state resistance: 187mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PMV130ENEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1262 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
319+ | 0.22 EUR |
365+ | 0.2 EUR |
407+ | 0.18 EUR |
523+ | 0.14 EUR |
554+ | 0.13 EUR |
PMV13XNEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 30A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.6A
Pulsed drain current: 30A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV160UP,215 |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4974 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
275+ | 0.26 EUR |
506+ | 0.14 EUR |
562+ | 0.13 EUR |
747+ | 0.096 EUR |
789+ | 0.091 EUR |
PMV19XNEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 3.8A; Idm: 24A
Pulsed drain current: 24A
Gate charge: 18.6nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 3.8A; Idm: 24A
Pulsed drain current: 24A
Gate charge: 18.6nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 3.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV20ENR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.8A; 1.2W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.8A; 1.2W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 10.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2878 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
285+ | 0.25 EUR |
379+ | 0.19 EUR |
421+ | 0.17 EUR |
555+ | 0.13 EUR |
588+ | 0.12 EUR |
PMV20XNER |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 24A
Case: SOT23; TO236AB
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 24A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 24A
Case: SOT23; TO236AB
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3417 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
262+ | 0.27 EUR |
291+ | 0.25 EUR |
385+ | 0.19 EUR |
407+ | 0.18 EUR |
PMV213SN,215 |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; Idm: 7.6A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 7.6A
Power dissipation: 2W
Case: SOT23; TO236AB
Gate-source voltage: ±30V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; Idm: 7.6A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 7.6A
Power dissipation: 2W
Case: SOT23; TO236AB
Gate-source voltage: ±30V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6215 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
190+ | 0.38 EUR |
200+ | 0.36 EUR |
275+ | 0.26 EUR |
290+ | 0.25 EUR |
PMV240SPR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV250EPEAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -1A
Power dissipation: 0.89W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -1A
Power dissipation: 0.89W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2745 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
330+ | 0.22 EUR |
445+ | 0.16 EUR |
490+ | 0.15 EUR |
650+ | 0.11 EUR |
685+ | 0.1 EUR |
PMV25ENEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 22A
Case: SOT23; TO236AB
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 22A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 22A
Case: SOT23; TO236AB
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV27UPEAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV27UPER |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV280ENEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; Idm: 5A; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 5A
Gate charge: 6.8nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.8A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: SOT23; TO236AB
On-state resistance: 1078mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; Idm: 5A; SOT23,TO236AB
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 5A
Gate charge: 6.8nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate; logic level
Drain current: 0.8A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: SOT23; TO236AB
On-state resistance: 1078mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1595 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
184+ | 0.39 EUR |
350+ | 0.2 EUR |
391+ | 0.18 EUR |
491+ | 0.15 EUR |
520+ | 0.14 EUR |
PMV28XPEAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30UN2R |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7205 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
237+ | 0.3 EUR |
394+ | 0.18 EUR |
443+ | 0.16 EUR |
607+ | 0.12 EUR |
642+ | 0.11 EUR |
PMV30UN2VL |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV30XPAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30XPEAR |
Hersteller: NEXPERIA
PMV30XPEAR SMD P channel transistors
PMV30XPEAR SMD P channel transistors
auf Bestellung 2007 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
166+ | 0.43 EUR |
363+ | 0.2 EUR |
383+ | 0.19 EUR |
PMV32UP,215 |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB
Power dissipation: 930mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT23; TO236AB
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 73mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB
Power dissipation: 930mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT23; TO236AB
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 73mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV35EPER |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -17A
Case: SOT23; TO236AB
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -17A
Case: SOT23; TO236AB
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
140+ | 0.53 EUR |
160+ | 0.46 EUR |
230+ | 0.31 EUR |
245+ | 0.3 EUR |
PMV37EN2R |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV37ENEAR |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV40UN2R |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 1W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 1W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2125 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
249+ | 0.29 EUR |
407+ | 0.18 EUR |
447+ | 0.16 EUR |
593+ | 0.12 EUR |
626+ | 0.11 EUR |
PMV45EN2R |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9734 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
254+ | 0.28 EUR |
428+ | 0.17 EUR |
472+ | 0.15 EUR |
614+ | 0.12 EUR |
649+ | 0.11 EUR |
PMV45EN2VL |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV48XP,215 |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.36 EUR |
225+ | 0.32 EUR |
305+ | 0.24 EUR |
325+ | 0.22 EUR |
PMV48XPA2R |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV48XPAR |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV48XPVL |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
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