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PMV28ENEAR NEXPERIA PMV28ENEA.pdf PMV28ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28UNEAR NEXPERIA PMV28UNEA.pdf PMV28UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28XPEAR PMV28XPEAR NEXPERIA PMV28XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30ENEAR NEXPERIA PMV30ENEA.pdf PMV30ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV30UN2R PMV30UN2R NEXPERIA PMV30UN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7205 Stücke:
Lieferzeit 7-14 Tag (e)
237+0.3 EUR
394+ 0.18 EUR
443+ 0.16 EUR
607+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 237
PMV30UN2VL PMV30UN2VL NEXPERIA PMV30UN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPAR NEXPERIA PMV30XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30XPEAR NEXPERIA PMV30XPEA.pdf PMV30XPEAR SMD P channel transistors
auf Bestellung 2007 Stücke:
Lieferzeit 7-14 Tag (e)
166+0.43 EUR
363+ 0.2 EUR
383+ 0.19 EUR
Mindestbestellmenge: 166
PMV32UP,215 PMV32UP,215 NEXPERIA PMV32UP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 73mΩ
Type of transistor: P-MOSFET
Power dissipation: 930mW
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2957 Stücke:
Lieferzeit 7-14 Tag (e)
218+0.33 EUR
243+ 0.29 EUR
304+ 0.24 EUR
322+ 0.22 EUR
Mindestbestellmenge: 218
PMV35EPER PMV35EPER NEXPERIA PMV35EPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -17A
Case: SOT23; TO236AB
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)
140+0.53 EUR
160+ 0.46 EUR
230+ 0.31 EUR
245+ 0.3 EUR
Mindestbestellmenge: 140
PMV37EN2R PMV37EN2R NEXPERIA PMV37EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV37ENEAR PMV37ENEAR NEXPERIA PMV37ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV40UN2R PMV40UN2R NEXPERIA PMV40UN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 1W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2125 Stücke:
Lieferzeit 7-14 Tag (e)
249+0.29 EUR
407+ 0.18 EUR
447+ 0.16 EUR
593+ 0.12 EUR
626+ 0.11 EUR
Mindestbestellmenge: 249
PMV42ENER NEXPERIA PMV42ENE.pdf PMV42ENER SMD N channel transistors
Produkt ist nicht verfügbar
PMV45EN2R PMV45EN2R NEXPERIA PMV45EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9734 Stücke:
Lieferzeit 7-14 Tag (e)
254+0.28 EUR
428+ 0.17 EUR
472+ 0.15 EUR
614+ 0.12 EUR
649+ 0.11 EUR
Mindestbestellmenge: 254
PMV45EN2VL PMV45EN2VL NEXPERIA PMV45EN2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV48XP,215 PMV48XP,215 NEXPERIA PMV48XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
225+ 0.32 EUR
305+ 0.24 EUR
325+ 0.22 EUR
Mindestbestellmenge: 200
PMV48XPA2R PMV48XPA2R NEXPERIA PMV48XPA2.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV48XPAR PMV48XPAR NEXPERIA PMV48XPA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV48XPVL PMV48XPVL NEXPERIA PMV48XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV50ENEAR PMV50ENEAR NEXPERIA PMV50ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A
Pulsed drain current: 5.5A
Gate charge: 10nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 69mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV50UPE,215 PMV50UPE,215 NEXPERIA PMV50UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV50XNEAR NEXPERIA PMV50XNEA.pdf PMV50XNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV50XPR
+1
 		PMV50XPR NEXPERIA PMV50XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2094 Stücke:
Lieferzeit 7-14 Tag (e)
171+0.42 EUR
275+ 0.26 EUR
407+ 0.18 EUR
431+ 0.17 EUR
Mindestbestellmenge: 171
PMV52ENEAR NEXPERIA PMV52ENEA.pdf PMV52ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV55ENEAR NEXPERIA PMV55ENEA.pdf PMV55ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV60ENEAR NEXPERIA PMV60ENEA.pdf PMV60ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV65ENEAR PMV65ENEAR NEXPERIA PMV65ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV65UNEAR NEXPERIA PMV65UNE.pdf PMV65UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV65UNER PMV65UNER NEXPERIA PMV65UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 13735 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
420+ 0.17 EUR
465+ 0.15 EUR
570+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 295
PMV65XP,215 PMV65XP,215 NEXPERIA PMV65XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 833mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32189 Stücke:
Lieferzeit 7-14 Tag (e)
302+0.24 EUR
527+ 0.14 EUR
589+ 0.12 EUR
729+ 0.098 EUR
771+ 0.093 EUR
Mindestbestellmenge: 302
PMV65XPEAR PMV65XPEAR NEXPERIA PMV65XPEA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2067 Stücke:
Lieferzeit 7-14 Tag (e)
183+0.39 EUR
258+ 0.28 EUR
364+ 0.2 EUR
385+ 0.19 EUR
Mindestbestellmenge: 183
PMV65XPER PMV65XPER NEXPERIA PMV65XPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV65XPVL PMV65XPVL NEXPERIA PMV65XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV75UP,215 PMV75UP,215 NEXPERIA PMV75UP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV88ENEAR NEXPERIA PMV88ENEA.pdf PMV88ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV90ENER PMV90ENER NEXPERIA PMV90ENE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1159 Stücke:
Lieferzeit 7-14 Tag (e)
283+0.25 EUR
496+ 0.14 EUR
550+ 0.13 EUR
691+ 0.1 EUR
731+ 0.098 EUR
Mindestbestellmenge: 283
PMXB120EPEZ NEXPERIA PMXB120EPE.pdf PMXB120EPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB350UPEZ NEXPERIA PMXB350UPE.pdf PMXB350UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB360ENEAZ NEXPERIA PMXB360ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Mounting: SMD
Case: DFN1010D-3; SOT1215
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB40UNEZ NEXPERIA PMXB40UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB43UNEZ NEXPERIA PMXB43UNE.pdf PMXB43UNEZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB56ENZ NEXPERIA PMXB56EN.pdf PMXB56ENZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB65ENEZ NEXPERIA PMXB65ENE.pdf NEXP-S-A0003059383-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB65UPEZ NEXPERIA PMXB65UPE.pdf PMXB65UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB75UPEZ NEXPERIA PMXB75UPE.pdf PMXB75UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMZ1000UN,315 NEXPERIA PMZ1000UN.pdf PMZ1000UN.315 SMD N channel transistors
Produkt ist nicht verfügbar
PMZ1200UPEYL NEXPERIA PMZ1200UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
PMZ130UNEYL NEXPERIA PMZ130UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.6nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ200UNEYL NEXPERIA PMZ200UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ290UNE2YL NEXPERIA PMZ290UNE2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 800mA
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ320UPEYL NEXPERIA PMZ320UPE.pdf PMZ320UPEYL SMD P channel transistors
Produkt ist nicht verfügbar
PMZ350UPEYL NEXPERIA PMZ350UPE.pdf PMZ350UPEYL SMD P channel transistors
auf Bestellung 9840 Stücke:
Lieferzeit 7-14 Tag (e)
350+0.2 EUR
1059+ 0.068 EUR
1120+ 0.064 EUR
Mindestbestellmenge: 350
PMZ370UNEYL NEXPERIA PMZ370UNE.pdf PMZ370UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
PMZ390UN,315 NEXPERIA PMZ390UN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.3nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 30V
Drain current: 0.6A
On-state resistance: 0.79Ω
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ550UNEYL NEXPERIA PMZ550UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNELYL NEXPERIA PMZ600UNEL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEYL NEXPERIA PMZ600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEZ NEXPERIA PMZ600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ950UPELYL NEXPERIA PMZ950UPEL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN1006-3; SOT883
On-state resistance: 2.1Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -300mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV28ENEAR PMV28ENEA.pdf
Hersteller: NEXPERIA
PMV28ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28UNEAR PMV28UNEA.pdf
Hersteller: NEXPERIA
PMV28UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV28XPEAR PMV28XPEA.pdf
PMV28XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30ENEAR PMV30ENEA.pdf
Hersteller: NEXPERIA
PMV30ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV30UN2R PMV30UN2.pdf
PMV30UN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
237+0.3 EUR
394+ 0.18 EUR
443+ 0.16 EUR
607+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 237
PMV30UN2VL PMV30UN2.pdf
PMV30UN2VL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 18A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV30XPAR PMV30XPA.pdf
PMV30XPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV30XPEAR PMV30XPEA.pdf
Hersteller: NEXPERIA
PMV30XPEAR SMD P channel transistors
auf Bestellung 2007 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
166+0.43 EUR
363+ 0.2 EUR
383+ 0.19 EUR
Mindestbestellmenge: 166
PMV32UP,215 PMV32UP.pdf
PMV32UP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; 930mW; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 73mΩ
Type of transistor: P-MOSFET
Power dissipation: 930mW
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2957 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
243+ 0.29 EUR
304+ 0.24 EUR
322+ 0.22 EUR
Mindestbestellmenge: 218
PMV35EPER PMV35EPE.pdf
PMV35EPER
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -17A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -17A
Case: SOT23; TO236AB
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
140+0.53 EUR
160+ 0.46 EUR
230+ 0.31 EUR
245+ 0.3 EUR
Mindestbestellmenge: 140
PMV37EN2R PMV37EN2.pdf
PMV37EN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV37ENEAR PMV37ENEA.pdf
PMV37ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV40UN2R PMV40UN2.pdf
PMV40UN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 1W; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 1W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
249+0.29 EUR
407+ 0.18 EUR
447+ 0.16 EUR
593+ 0.12 EUR
626+ 0.11 EUR
Mindestbestellmenge: 249
PMV42ENER PMV42ENE.pdf
Hersteller: NEXPERIA
PMV42ENER SMD N channel transistors
Produkt ist nicht verfügbar
PMV45EN2R PMV45EN2.pdf
PMV45EN2R
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1115mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1115mW
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9734 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
254+0.28 EUR
428+ 0.17 EUR
472+ 0.15 EUR
614+ 0.12 EUR
649+ 0.11 EUR
Mindestbestellmenge: 254
PMV45EN2VL PMV45EN2.pdf
PMV45EN2VL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV48XP,215 PMV48XP.pdf
PMV48XP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A; 930mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
225+ 0.32 EUR
305+ 0.24 EUR
325+ 0.22 EUR
Mindestbestellmenge: 200
PMV48XPA2R PMV48XPA2.pdf
PMV48XPA2R
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV48XPAR PMV48XPA.pdf
PMV48XPAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: SOT23; TO236AB
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV48XPVL PMV48XP.pdf
PMV48XPVL
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Power dissipation: 930mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV50ENEAR PMV50ENEA.pdf
PMV50ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A
Pulsed drain current: 5.5A
Gate charge: 10nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 69mΩ
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV50UPE,215 PMV50UPE.pdf
PMV50UPE,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV50XNEAR PMV50XNEA.pdf
Hersteller: NEXPERIA
PMV50XNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV50XPR PMV50XP.pdf
PMV50XPR
+1
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2094 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
275+ 0.26 EUR
407+ 0.18 EUR
431+ 0.17 EUR
Mindestbestellmenge: 171
PMV52ENEAR PMV52ENEA.pdf
Hersteller: NEXPERIA
PMV52ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV55ENEAR PMV55ENEA.pdf
Hersteller: NEXPERIA
PMV55ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV60ENEAR PMV60ENEA.pdf
Hersteller: NEXPERIA
PMV60ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV65ENEAR PMV65ENEA.pdf
PMV65ENEAR
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV65UNEAR PMV65UNE.pdf
Hersteller: NEXPERIA
PMV65UNEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV65UNER PMV65UNE.pdf
PMV65UNER
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 13735 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
420+ 0.17 EUR
465+ 0.15 EUR
570+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 295
PMV65XP,215 PMV65XP.pdf
PMV65XP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Power dissipation: 833mW
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32189 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
302+0.24 EUR
527+ 0.14 EUR
589+ 0.12 EUR
729+ 0.098 EUR
771+ 0.093 EUR
Mindestbestellmenge: 302
PMV65XPEAR PMV65XPEA.pdf
PMV65XPEAR
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2067 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
183+0.39 EUR
258+ 0.28 EUR
364+ 0.2 EUR
385+ 0.19 EUR
Mindestbestellmenge: 183
PMV65XPER PMV65XPE.pdf
PMV65XPER
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PMV65XPVL PMV65XP.pdf
PMV65XPVL
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMV75UP,215 PMV75UP.pdf
PMV75UP,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PMV88ENEAR PMV88ENEA.pdf
Hersteller: NEXPERIA
PMV88ENEAR SMD N channel transistors
Produkt ist nicht verfügbar
PMV90ENER PMV90ENE.pdf
PMV90ENER
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1159 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
283+0.25 EUR
496+ 0.14 EUR
550+ 0.13 EUR
691+ 0.1 EUR
731+ 0.098 EUR
Mindestbestellmenge: 283
PMXB120EPEZ PMXB120EPE.pdf
Hersteller: NEXPERIA
PMXB120EPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB350UPEZ PMXB350UPE.pdf
Hersteller: NEXPERIA
PMXB350UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB360ENEAZ PMXB360ENEA.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Mounting: SMD
Case: DFN1010D-3; SOT1215
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB40UNEZ PMXB40UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB43UNEZ PMXB43UNE.pdf
Hersteller: NEXPERIA
PMXB43UNEZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB56ENZ PMXB56EN.pdf
Hersteller: NEXPERIA
PMXB56ENZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB65ENEZ PMXB65ENE.pdf NEXP-S-A0003059383-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB65UPEZ PMXB65UPE.pdf
Hersteller: NEXPERIA
PMXB65UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB75UPEZ PMXB75UPE.pdf
Hersteller: NEXPERIA
PMXB75UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMZ1000UN,315 PMZ1000UN.pdf
Hersteller: NEXPERIA
PMZ1000UN.315 SMD N channel transistors
Produkt ist nicht verfügbar
PMZ1200UPEYL PMZ1200UPE.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
PMZ130UNEYL PMZ130UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.6nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ200UNEYL PMZ200UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ290UNE2YL PMZ290UNE2.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 800mA
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ320UPEYL PMZ320UPE.pdf
Hersteller: NEXPERIA
PMZ320UPEYL SMD P channel transistors
Produkt ist nicht verfügbar
PMZ350UPEYL PMZ350UPE.pdf
Hersteller: NEXPERIA
PMZ350UPEYL SMD P channel transistors
auf Bestellung 9840 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
350+0.2 EUR
1059+ 0.068 EUR
1120+ 0.064 EUR
Mindestbestellmenge: 350
PMZ370UNEYL PMZ370UNE.pdf
Hersteller: NEXPERIA
PMZ370UNEYL SMD N channel transistors
Produkt ist nicht verfügbar
PMZ390UN,315 PMZ390UN.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.3nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: DFN1006-3; SOT883
Drain-source voltage: 30V
Drain current: 0.6A
On-state resistance: 0.79Ω
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ550UNEYL PMZ550UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNELYL PMZ600UNEL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEYL PMZ600UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ600UNEZ PMZ600UNE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006-3; SOT883
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
PMZ950UPELYL PMZ950UPEL.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN1006-3; SOT883
On-state resistance: 2.1Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -300mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
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