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MPSA20G MPSA20G onsemi mpsa20-d.pdf Description: TRANS NPN 40V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA27RLRAG MPSA27RLRAG onsemi mpsa27-d.pdf Description: TRANS NPN DARL 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA28G MPSA28G onsemi MPSA28,%2029%20Rev2.pdf Description: TRANS NPN DARL 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA29RLRPG MPSA29RLRPG onsemi mpsa28-d.pdf Description: TRANS NPN DARL 100V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA42RLRAG MPSA42RLRAG onsemi mpsa42-d.pdf Description: TRANS NPN 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA44RLRAG MPSA44RLRAG onsemi mpsa44-d.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA55RLRAG MPSA55RLRAG onsemi mpsa05-d.pdf Description: TRANS PNP 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA56RLRAG MPSA56RLRAG onsemi mpsa05-d.pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA63RLRAG MPSA63RLRAG onsemi mpsa62-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA64G MPSA64G onsemi mpsa62-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA77G MPSA77G onsemi mpsa75-d.pdf Description: TRANS PNP DARL 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA92RLRAG MPSA92RLRAG onsemi mpsa92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA93G MPSA93G onsemi mpsa92-d.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSH10RLRAG MPSH10RLRAG onsemi mpsh10-d.pdf Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Produkt ist nicht verfügbar
MPSW01AG MPSW01AG onsemi mpsw01-d.pdf Description: TRANS NPN 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW01G MPSW01G onsemi mpsw01-d.pdf Description: TRANS NPN 30V 1A TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW05G MPSW05G onsemi mpsw05-d.pdf Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW06RLRAG MPSW06RLRAG onsemi mpsw05-d.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW42RLRAG MPSW42RLRAG onsemi mpsw42-d.pdf Description: TRANS NPN 300V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW45AG MPSW45AG onsemi mpsw45-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW45G MPSW45G onsemi mpsw45-d.pdf Description: TRANS NPN DARL 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW51AG MPSW51AG onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW63G MPSW63G onsemi mpsw63-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW92G MPSW92G onsemi mpsw92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MR2835SKG MR2835SKG onsemi MR2835SK-D.pdf description Description: TVS DIODE 23VWM TOP CAN
Packaging: Tape & Reel (TR)
Package / Case: Top Can
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: Top Can
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
MR750RLG MR750RLG onsemi mr750-d.pdf Description: DIODE GP 50V 6A MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
MR754RLG MR754RLG onsemi mr750-d.pdf Description: DIODE GP 400V 6A MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
MR852RLG MR852RLG onsemi mr850-d.pdf Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
MR854G MR854G onsemi mr850-d.pdf Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
MR856RLG MR856RLG onsemi mr850-d.pdf Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
MRA4003T3G MRA4003T3G onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 300V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
MRA4004T3G MRA4004T3G onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 290000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.15 EUR
10000+ 0.13 EUR
25000+ 0.12 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 5000
MRA4005T3G MRA4005T3G onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 200000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.15 EUR
10000+ 0.13 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 5000
MRA4007T3G MRA4007T3G onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 1KV 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
MSD601-RT1G MSD601-RT1G onsemi msd601-rt1-d.pdf Description: TRANS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.085 EUR
6000+ 0.079 EUR
9000+ 0.066 EUR
Mindestbestellmenge: 3000
MSQA6V1W5T2G MSQA6V1W5T2G onsemi msqa6v1w5t2-d.pdf Description: TVS DIODE 3VWM SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 54000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
30000+ 0.11 EUR
Mindestbestellmenge: 3000
MSR1560G MSR1560G onsemi msr1560-d.pdf Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 299 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.03 EUR
10+ 3.35 EUR
100+ 2.67 EUR
Mindestbestellmenge: 7
MSR860G MSR860G onsemi msr860-d.pdf Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
MTB50P03HDLT4G MTB50P03HDLT4G onsemi MTB50P03HDL.pdf Description: MOSFET P-CH 30V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar
MTD6N15T4G MTD6N15T4G onsemi mtd6n15-d.pdf Description: MOSFET N-CH 150V 6A DPAK
Produkt ist nicht verfügbar
MTP10N10ELG MTP10N10ELG onsemi mtp10n10el-d.pdf Description: MOSFET N-CH 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Produkt ist nicht verfügbar
MTP23P06VG MTP23P06VG onsemi mtp23p06v-d.pdf Description: MOSFET P-CH 60V 23A TO220AB
Produkt ist nicht verfügbar
MTP2P50EG MTP2P50EG onsemi mtp2p50e-d.pdf Description: MOSFET P-CH 500V 2A TO220AB
Produkt ist nicht verfügbar
MTP50P03HDLG MTP50P03HDLG onsemi mtp50p03hdl-d.pdf Description: MOSFET P-CH 30V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar
MUN2111T1G MUN2111T1G onsemi dta114e-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.072 EUR
6000+ 0.068 EUR
9000+ 0.058 EUR
Mindestbestellmenge: 3000
MUN2211T1G MUN2211T1G onsemi dtc114e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.066 EUR
6000+ 0.062 EUR
9000+ 0.053 EUR
Mindestbestellmenge: 3000
MUN2212T1G MUN2212T1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.08 EUR
Mindestbestellmenge: 3000
MUN2213T1G MUN2213T1G onsemi dtc144e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.08 EUR
6000+ 0.076 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 3000
MUN2214T1G MUN2214T1G onsemi dtc114y-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
MUN5114T1G MUN5114T1G onsemi dta114y-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
MUN5211DW1T1G MUN5211DW1T1G onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 21760 Stücke:
Lieferzeit 21-28 Tag (e)
48+0.55 EUR
70+ 0.37 EUR
143+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 48
MUN5214T1G MUN5214T1G onsemi dtc114y-d.pdf Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.072 EUR
6000+ 0.068 EUR
9000+ 0.058 EUR
30000+ 0.053 EUR
Mindestbestellmenge: 3000
MUN5311DW1T1G MUN5311DW1T1G onsemi dtc114ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 535400 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.1 EUR
6000+ 0.093 EUR
9000+ 0.077 EUR
30000+ 0.076 EUR
75000+ 0.068 EUR
150000+ 0.059 EUR
Mindestbestellmenge: 3000
MUR1100ERLG MUR1100ERLG onsemi mur180e-d.pdf description Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
MUR110RLG MUR110RLG onsemi mur120-d.pdf Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
MUR115RLG MUR115RLG onsemi mur120-d.pdf Description: DIODE GEN PURP 150V 1A AXIAL
Produkt ist nicht verfügbar
MUR120RLG MUR120RLG onsemi mur120-d.pdf description Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
MUR130G MUR130G onsemi mur120-d.pdf Description: DIODE GEN PURP 300V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 3490 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
31+ 0.84 EUR
100+ 0.58 EUR
500+ 0.43 EUR
1000+ 0.32 EUR
2000+ 0.3 EUR
Mindestbestellmenge: 25
MUR140RLG MUR140RLG onsemi mur120-d.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
MUR1520G MUR1520G onsemi mur1520-d.pdf description Description: DIODE GEN PURP 200V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
MPSA20G mpsa20-d.pdf
MPSA20G
Hersteller: onsemi
Description: TRANS NPN 40V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA27RLRAG mpsa27-d.pdf
MPSA27RLRAG
Hersteller: onsemi
Description: TRANS NPN DARL 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA28G MPSA28,%2029%20Rev2.pdf
MPSA28G
Hersteller: onsemi
Description: TRANS NPN DARL 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA29RLRPG mpsa28-d.pdf
MPSA29RLRPG
Hersteller: onsemi
Description: TRANS NPN DARL 100V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA42RLRAG mpsa42-d.pdf
MPSA42RLRAG
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA44RLRAG mpsa44-d.pdf
MPSA44RLRAG
Hersteller: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA55RLRAG mpsa05-d.pdf
MPSA55RLRAG
Hersteller: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA56RLRAG mpsa05-d.pdf
MPSA56RLRAG
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA63RLRAG mpsa62-d.pdf
MPSA63RLRAG
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA64G mpsa62-d.pdf
MPSA64G
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA77G mpsa75-d.pdf
MPSA77G
Hersteller: onsemi
Description: TRANS PNP DARL 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA92RLRAG mpsa92-d.pdf
MPSA92RLRAG
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSA93G mpsa92-d.pdf
MPSA93G
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPSH10RLRAG mpsh10-d.pdf
MPSH10RLRAG
Hersteller: onsemi
Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Produkt ist nicht verfügbar
MPSW01AG mpsw01-d.pdf
MPSW01AG
Hersteller: onsemi
Description: TRANS NPN 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW01G mpsw01-d.pdf
MPSW01G
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW05G mpsw05-d.pdf
MPSW05G
Hersteller: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW06RLRAG mpsw05-d.pdf
MPSW06RLRAG
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW42RLRAG mpsw42-d.pdf
MPSW42RLRAG
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW45AG mpsw45-d.pdf
MPSW45AG
Hersteller: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW45G mpsw45-d.pdf
MPSW45G
Hersteller: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW51AG mpsw51-d.pdf
MPSW51AG
Hersteller: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW63G mpsw63-d.pdf
MPSW63G
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MPSW92G mpsw92-d.pdf
MPSW92G
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
MR2835SKG description MR2835SK-D.pdf
MR2835SKG
Hersteller: onsemi
Description: TVS DIODE 23VWM TOP CAN
Packaging: Tape & Reel (TR)
Package / Case: Top Can
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: Top Can
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
MR750RLG mr750-d.pdf
MR750RLG
Hersteller: onsemi
Description: DIODE GP 50V 6A MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
MR754RLG mr750-d.pdf
MR754RLG
Hersteller: onsemi
Description: DIODE GP 400V 6A MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
MR852RLG mr850-d.pdf
MR852RLG
Hersteller: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
MR854G mr850-d.pdf
MR854G
Hersteller: onsemi
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
MR856RLG mr850-d.pdf
MR856RLG
Hersteller: onsemi
Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
MRA4003T3G mra4003t3-d.pdf
MRA4003T3G
Hersteller: onsemi
Description: DIODE GEN PURP 300V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
MRA4004T3G mra4003t3-d.pdf
MRA4004T3G
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 290000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.15 EUR
10000+ 0.13 EUR
25000+ 0.12 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 5000
MRA4005T3G mra4003t3-d.pdf
MRA4005T3G
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 200000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.15 EUR
10000+ 0.13 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 5000
MRA4007T3G mra4003t3-d.pdf
MRA4007T3G
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
MSD601-RT1G msd601-rt1-d.pdf
MSD601-RT1G
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.085 EUR
6000+ 0.079 EUR
9000+ 0.066 EUR
Mindestbestellmenge: 3000
MSQA6V1W5T2G msqa6v1w5t2-d.pdf
MSQA6V1W5T2G
Hersteller: onsemi
Description: TVS DIODE 3VWM SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 54000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
30000+ 0.11 EUR
Mindestbestellmenge: 3000
MSR1560G msr1560-d.pdf
MSR1560G
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 299 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.03 EUR
10+ 3.35 EUR
100+ 2.67 EUR
Mindestbestellmenge: 7
MSR860G msr860-d.pdf
MSR860G
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
MTB50P03HDLT4G MTB50P03HDL.pdf
MTB50P03HDLT4G
Hersteller: onsemi
Description: MOSFET P-CH 30V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar
MTD6N15T4G mtd6n15-d.pdf
MTD6N15T4G
Hersteller: onsemi
Description: MOSFET N-CH 150V 6A DPAK
Produkt ist nicht verfügbar
MTP10N10ELG mtp10n10el-d.pdf
MTP10N10ELG
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 5A, 5V
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Produkt ist nicht verfügbar
MTP23P06VG mtp23p06v-d.pdf
MTP23P06VG
Hersteller: onsemi
Description: MOSFET P-CH 60V 23A TO220AB
Produkt ist nicht verfügbar
MTP2P50EG mtp2p50e-d.pdf
MTP2P50EG
Hersteller: onsemi
Description: MOSFET P-CH 500V 2A TO220AB
Produkt ist nicht verfügbar
MTP50P03HDLG mtp50p03hdl-d.pdf
MTP50P03HDLG
Hersteller: onsemi
Description: MOSFET P-CH 30V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar
MUN2111T1G dta114e-d.pdf
MUN2111T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.072 EUR
6000+ 0.068 EUR
9000+ 0.058 EUR
Mindestbestellmenge: 3000
MUN2211T1G dtc114e-d.pdf
MUN2211T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.066 EUR
6000+ 0.062 EUR
9000+ 0.053 EUR
Mindestbestellmenge: 3000
MUN2212T1G dtc124e-d.pdf
MUN2212T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.08 EUR
Mindestbestellmenge: 3000
MUN2213T1G dtc144e-d.pdf
MUN2213T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.08 EUR
6000+ 0.076 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 3000
MUN2214T1G dtc114y-d.pdf
MUN2214T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
MUN5114T1G dta114y-d.pdf
MUN5114T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
MUN5211DW1T1G dtc114ed-d.pdf
MUN5211DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 21760 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
48+0.55 EUR
70+ 0.37 EUR
143+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 48
MUN5214T1G dtc114y-d.pdf
MUN5214T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.072 EUR
6000+ 0.068 EUR
9000+ 0.058 EUR
30000+ 0.053 EUR
Mindestbestellmenge: 3000
MUN5311DW1T1G dtc114ep-d.pdf
MUN5311DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 535400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.093 EUR
9000+ 0.077 EUR
30000+ 0.076 EUR
75000+ 0.068 EUR
150000+ 0.059 EUR
Mindestbestellmenge: 3000
MUR1100ERLG description mur180e-d.pdf
MUR1100ERLG
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
MUR110RLG mur120-d.pdf
MUR110RLG
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
MUR115RLG mur120-d.pdf
MUR115RLG
Hersteller: onsemi
Description: DIODE GEN PURP 150V 1A AXIAL
Produkt ist nicht verfügbar
MUR120RLG description mur120-d.pdf
MUR120RLG
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
MUR130G mur120-d.pdf
MUR130G
Hersteller: onsemi
Description: DIODE GEN PURP 300V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 3490 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
31+ 0.84 EUR
100+ 0.58 EUR
500+ 0.43 EUR
1000+ 0.32 EUR
2000+ 0.3 EUR
Mindestbestellmenge: 25
MUR140RLG mur120-d.pdf
MUR140RLG
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
MUR1520G description mur1520-d.pdf
MUR1520G
Hersteller: onsemi
Description: DIODE GEN PURP 200V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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