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FCPF165N65S3R0L | onsemi |
 Description: MOSFET N-CH 650V 19A TO220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
auf Bestellung 2655 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF165N65S3R0L | onsemi |
Description: MOSFET N-CH 650V 19A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
Produkt ist nicht verfügbar |
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BAS16TT1 | onsemi |
Description: DIODE SS SW 75V 200MA SC-75 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| NXH100T120L3Q0S1NG | onsemi |
Description: 1200V GEN III Q0PACK WITH NI-PLA Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: 18-PIM/Q0PACK (55x32.5) Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 122 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH011F120M3F2PTHG | onsemi |
Description: MOSFET 4N-CH 1200V 105A 34PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 244W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA Supplier Device Package: 34-PIM (56.7x42.5) |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH007F120M3F2PTHG | onsemi |
Description: MOSFET 4N-CH 1200V 149A 34PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 353W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA Supplier Device Package: 34-PIM (56.7x42.5) |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH004P120M3F2PTNG | onsemi |
Description: MOSFET 2N-CH 1200V 338A 36PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1100W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
auf Bestellung 14606 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH004P120M3F2PNG | onsemi |
Description: MOSFET 2N-CH 1200V 338A 36PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.098W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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SG1577ASY | onsemi |
Description: IC REG CTRLR BUCK/BOOST 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply (Vcc/Vdd): 10V ~ 15V Supplier Device Package: 20-SOIC Duty Cycle (Max): 95% Number of Outputs: 2 |
Produkt ist nicht verfügbar |
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| RD0504T-P-TL-H | onsemi |
Description: DIODE STANDARD 400V 5A TPFA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TP-FA Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 400 V |
auf Bestellung 31500 Stücke: Lieferzeit 10-14 Tag (e) |
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RD0506LS-SB-1H | onsemi |
Description: DIODE STANDARD 600V 5A TO220F2FS Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220F-2FS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 4649 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5136DW1T1G | onsemi |
Description: MUN5136 - DUAL BIAS RESISTOR TRA Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H121P | onsemi |
Description: IC GATE OR/AND 4WIDE 16-DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Single-Ended Mounting Type: Through Hole Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 16-PDIP Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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MC10H121M | onsemi |
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ Packaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 16-SOEIAJ Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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MC10H121FNR2 | onsemi |
Description: IC OR/AND INVERTER GATE 20PLCC Packaging: Tape & Reel (TR) Package / Case: 20-LCC (J-Lead) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 20-PLCC (9x9) Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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MC10H121FNR2G | onsemi |
Description: IC OR/AND INVERTER GATE 20PLCC Packaging: Tape & Reel (TR) Package / Case: 20-LCC (J-Lead) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 20-PLCC (9x9) Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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MC10H124P | onsemi |
Description: IC XLATOR QUAD TTL-MECL 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Operating Temperature: 0°C ~ 75°C (TA) Supplier Device Package: 16-PDIP Channel Type: Unidirectional Output Signal: MECL Translator Type: Mixed Signal Channels per Circuit: 4 Input Signal: TTL Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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MC10H125L | onsemi |
Description: IC TRANSLATOR UNIDIR 16CDIP Packaging: Tube Package / Case: 16-CDIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Operating Temperature: 0°C ~ 75°C (TA) Supplier Device Package: 16-CDIP Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 4 Input Signal: MECL Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NIV3071MTW4TWG | onsemi |
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT Packaging: Tape & Reel (TR) Package / Case: 16-WQFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 8V ~ 60V Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 16-WQFN (5x6) |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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NIV3071MTW4TWG | onsemi |
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT Packaging: Cut Tape (CT) Package / Case: 16-WQFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 8V ~ 60V Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 16-WQFN (5x6) |
auf Bestellung 23135 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG045N065SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V |
auf Bestellung 22400 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG045N065SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V |
auf Bestellung 22617 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG045N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVBG045N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8768CD33ABR2G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 14-SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8768CD33ABR2G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 14-SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FJV992PMTF | onsemi |
Description: TRANS PNP 120V 0.05A SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
auf Bestellung 20500 Stücke: Lieferzeit 10-14 Tag (e) |
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LC72722PM-TLM-E | onsemi |
Description: RF DEMODULATOR IC 24MFP Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.311", 7.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Gain: 31dB Supplier Device Package: 24-MFP Current - Supply: 9 mA |
Produkt ist nicht verfügbar |
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NTJD4401NT1G-001 | onsemi |
Description: MOSFET 2N-CH 20V 630MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1N4154 | onsemi |
Description: DIODE STANDARD 35V 100MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
Produkt ist nicht verfügbar |
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FDP5N60NZ | onsemi |
Description: MOSFET N-CH 600V 4.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |
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NVTYS006N06CLTWG | onsemi |
Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NCV-RSL15-512-101Q40-AVG | onsemi |
Description: IC RF TXRX+MCU BLE 40QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -102dBm Mounting Type: Surface Mount, Wettable Flank Memory Size: 512kB Flash, 80kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.2V ~ 3.6V Power - Output: 6dBm Protocol: Bluetooth v5.2 Current - Receiving: 2.7mA ~ 6.7mA Data Rate (Max): 4Mbps Current - Transmitting: 4.3mA ~ 24.1mA Supplier Device Package: 40-QFNW (6x6) GPIO: 15 Modulation: FSK, GFSK, MSK, O-QPSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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NCV-RSL15-512-101Q40-AVG | onsemi |
Description: IC RF TXRX+MCU BLE 40QFN Packaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -102dBm Mounting Type: Surface Mount, Wettable Flank Memory Size: 512kB Flash, 80kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.2V ~ 3.6V Power - Output: 6dBm Protocol: Bluetooth v5.2 Current - Receiving: 2.7mA ~ 6.7mA Data Rate (Max): 4Mbps Current - Transmitting: 4.3mA ~ 24.1mA Supplier Device Package: 40-QFNW (6x6) GPIO: 15 Modulation: FSK, GFSK, MSK, O-QPSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3488 Stücke: Lieferzeit 10-14 Tag (e) |
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R3110-CBAA-E1T | onsemi |
Description: IC AUDIO SIGNAL PROCESSOR 21SIP Packaging: Bulk Package / Case: 21-TFLGA Mounting Type: Surface Mount Function: Audio Signal Processor Applications: Consumer Audio Supplier Device Package: 21-SIP (3.1x5.08) Number of Channels: 2 |
auf Bestellung 26661 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV14027BDG | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 3V ~ 18V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8.8mA, 8.8mA Trigger Type: Positive Edge Clock Frequency: 13 MHz Input Capacitance: 5 pF Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF Number of Bits per Element: 1 |
auf Bestellung 5856 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV7340D14R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Receiver Hysteresis: 900 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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NCV7340D14R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Receiver Hysteresis: 900 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2219 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4813NH-35G | onsemi |
Description: MOSFET N-CH 30V 7.6A/40A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTD4909N-35G | onsemi |
Description: MOSFET N-CH 30V 8.8A/41A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V |
auf Bestellung 19225 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4910N-35G | onsemi |
Description: MOSFET N-CH 30V 8.2A/37A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V |
auf Bestellung 11425 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4969N-35G | onsemi |
Description: MOSFET N-CH 30V 9.4A/41A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V |
auf Bestellung 43490 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD3813N-35G | onsemi |
Description: MOSFET N-CH 16V 9.6A/51A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V |
auf Bestellung 11550 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4909NA-35G | onsemi |
Description: MOSFET N-CH 30V 8.8A/41A IPAK Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V |
auf Bestellung 23773 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4970N-35G | onsemi |
Description: MOSFET N-CH 30V 8.5A/36A IPAK Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V |
auf Bestellung 17337 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5160GD16 | onsemi |
Description: SWITCHING CONTROLLER Packaging: Bulk |
auf Bestellung 10848 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5156GD16 | onsemi |
Description: SWITCHING CONTROLLER Packaging: Bulk |
auf Bestellung 1824 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP130AMX090TCG | onsemi |
Description: IC REG LINEAR 0.9V 300MA 6-XDFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable PSRR: 80dB ~ 65dB (1kHz) Voltage Dropout (Max): 0.15V @ 300mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP130AMX090TCG | onsemi |
Description: IC REG LINEAR 0.9V 300MA 6-XDFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable PSRR: 80dB ~ 65dB (1kHz) Voltage Dropout (Max): 0.15V @ 300mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
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MC10H107L | onsemi |
Description: IC XOR/XNOR GATE 3-CIR 16-CDIP Packaging: Tube Package / Case: 16-CDIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Logic Type: XOR/XNOR Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 6 Input (2, 2, 2) Schmitt Trigger Input: No Supplier Device Package: 16-CDIP Number of Circuits: 3 |
auf Bestellung 235 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H107PG | onsemi |
Description: IC XOR/XNOR 3-CIR 6-IN 16-PDIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Logic Type: 2 Input XOR/XNOR Operating Temperature: 0°C ~ 75°C Number of Inputs: 6 Input (2, 2, 2) Schmitt Trigger Input: No Supplier Device Package: 16-PDIP Number of Circuits: 3 |
auf Bestellung 10113 Stücke: Lieferzeit 10-14 Tag (e) |
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74ABT244CMSA | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20SSOP Packaging: Tube Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SSOP |
Produkt ist nicht verfügbar |
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74ABT244CMSAX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20SSOP Packaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SSOP |
Produkt ist nicht verfügbar |
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74ABT244CSCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
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N24C16UDTG | onsemi |
Description: IC EEPROM 16KBIT I2C US8 Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: US8 Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 117000 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMB12AT3 | onsemi |
Description: TVS DIODE 12V 19.9V SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMF24AT1 | onsemi |
Description: TVS DIODE 24VWM 38.9VC SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 200W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SD1803S-E | onsemi |
Description: TRANS NPN 50V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NB7L585MNTWG | onsemi |
Description: IC CLK BUFFER 2:6 5GHZ 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution), Multiplexer, Data Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 2:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-QFN (5x5) Frequency - Max: 5 GHz |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB7L585MNTWG | onsemi |
Description: IC CLK BUFFER 2:6 5GHZ 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution), Multiplexer, Data Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 2:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-QFN (5x5) Frequency - Max: 5 GHz |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF165N65S3R0L |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 2655 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 3.04 EUR |
| FCPF165N65S3R0L |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH100T120L3Q0S1NG |
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Hersteller: onsemi
Description: 1200V GEN III Q0PACK WITH NI-PLA
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 122 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
Description: 1200V GEN III Q0PACK WITH NI-PLA
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 122 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 98.42 EUR |
| 24+ | 89.47 EUR |
| 48+ | 86.49 EUR |
| NXH011F120M3F2PTHG |
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Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 105A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
Description: MOSFET 4N-CH 1200V 105A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 177.39 EUR |
| NXH007F120M3F2PTHG |
|
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 149A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
Description: MOSFET 4N-CH 1200V 149A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 241.65 EUR |
| 20+ | 235.49 EUR |
| NXH004P120M3F2PTNG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 14606 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 302.19 EUR |
| 20+ | 283.06 EUR |
| NXH004P120M3F2PNG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 308.49 EUR |
| 20+ | 289.93 EUR |
| SG1577ASY |
Hersteller: onsemi
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD0504T-P-TL-H |
Hersteller: onsemi
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
auf Bestellung 31500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 443+ | 1.02 EUR |
| RD0506LS-SB-1H |
|
Hersteller: onsemi
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4649 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 387+ | 1.18 EUR |
| MUN5136DW1T1G |
|
Hersteller: onsemi
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8663+ | 0.049 EUR |
| MC10H121P |
|
Hersteller: onsemi
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H121M |
|
Hersteller: onsemi
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H121FNR2 |
|
Hersteller: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H121FNR2G |
|
Hersteller: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H124P |
Hersteller: onsemi
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H125L |
Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NIV3071MTW4TWG |
|
Hersteller: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 4.84 EUR |
| NIV3071MTW4TWG |
|
Hersteller: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
auf Bestellung 23135 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.4 EUR |
| 10+ | 7.82 EUR |
| 100+ | 6.04 EUR |
| 500+ | 5.92 EUR |
| NTBG045N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
auf Bestellung 22400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 10.47 EUR |
| NTBG045N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
auf Bestellung 22617 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.7 EUR |
| 10+ | 14.5 EUR |
| 100+ | 12.81 EUR |
| NVBG045N065SC1 |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG045N065SC1 |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.24 EUR |
| 10+ | 24 EUR |
| 100+ | 20.76 EUR |
| NCV8768CD33ABR2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.17 EUR |
| 5000+ | 1.14 EUR |
| NCV8768CD33ABR2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.66 EUR |
| 25+ | 2.25 EUR |
| 100+ | 1.79 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.3 EUR |
| FJV992PMTF |
|
Hersteller: onsemi
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
auf Bestellung 20500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8876+ | 0.051 EUR |
| LC72722PM-TLM-E |
|
Hersteller: onsemi
Description: RF DEMODULATOR IC 24MFP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.311", 7.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Gain: 31dB
Supplier Device Package: 24-MFP
Current - Supply: 9 mA
Description: RF DEMODULATOR IC 24MFP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.311", 7.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Gain: 31dB
Supplier Device Package: 24-MFP
Current - Supply: 9 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTJD4401NT1G-001 |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 630MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 630MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4154 |
|
Hersteller: onsemi
Description: DIODE STANDARD 35V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE STANDARD 35V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP5N60NZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTYS006N06CLTWG |
|
Hersteller: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV-RSL15-512-101Q40-AVG |
|
Hersteller: onsemi
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV-RSL15-512-101Q40-AVG |
|
Hersteller: onsemi
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3488 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.14 EUR |
| 10+ | 9.39 EUR |
| 25+ | 8.55 EUR |
| 100+ | 7.51 EUR |
| 250+ | 6.96 EUR |
| 500+ | 6.6 EUR |
| 1000+ | 6.29 EUR |
| R3110-CBAA-E1T |
|
Hersteller: onsemi
Description: IC AUDIO SIGNAL PROCESSOR 21SIP
Packaging: Bulk
Package / Case: 21-TFLGA
Mounting Type: Surface Mount
Function: Audio Signal Processor
Applications: Consumer Audio
Supplier Device Package: 21-SIP (3.1x5.08)
Number of Channels: 2
Description: IC AUDIO SIGNAL PROCESSOR 21SIP
Packaging: Bulk
Package / Case: 21-TFLGA
Mounting Type: Surface Mount
Function: Audio Signal Processor
Applications: Consumer Audio
Supplier Device Package: 21-SIP (3.1x5.08)
Number of Channels: 2
auf Bestellung 26661 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 28.01 EUR |
| NLV14027BDG |
|
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8.8mA, 8.8mA
Trigger Type: Positive Edge
Clock Frequency: 13 MHz
Input Capacitance: 5 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8.8mA, 8.8mA
Trigger Type: Positive Edge
Clock Frequency: 13 MHz
Input Capacitance: 5 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Bits per Element: 1
auf Bestellung 5856 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1224+ | 0.41 EUR |
| NCV7340D14R2G |
|
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7340D14R2G |
|
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2219 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 11+ | 1.68 EUR |
| 25+ | 1.6 EUR |
| 100+ | 1.22 EUR |
| 250+ | 1.08 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.8 EUR |
| NTD4813NH-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.6A/40A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 12 V
Description: MOSFET N-CH 30V 7.6A/40A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4909N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
auf Bestellung 19225 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1567+ | 0.31 EUR |
| NTD4910N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/37A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A/37A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V
auf Bestellung 11425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1567+ | 0.31 EUR |
| NTD4969N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.4A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V
Description: MOSFET N-CH 30V 9.4A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V
auf Bestellung 43490 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1480+ | 0.32 EUR |
| NTD3813N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
auf Bestellung 11550 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1402+ | 0.34 EUR |
| NTD4909NA-35G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
auf Bestellung 23773 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1101+ | 0.44 EUR |
| NTD4970N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.5A/36A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A/36A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V
auf Bestellung 17337 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 820+ | 0.6 EUR |
| CS5160GD16 |
|
auf Bestellung 10848 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 410+ | 1.19 EUR |
| CS5156GD16 |
|
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 410+ | 1.19 EUR |
| NCP130AMX090TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 300MA 6-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 0.9V 300MA 6-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP130AMX090TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 300MA 6-XDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 0.9V 300MA 6-XDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 65dB (1kHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC10H107L |
|
Hersteller: onsemi
Description: IC XOR/XNOR GATE 3-CIR 16-CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Logic Type: XOR/XNOR Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 6 Input (2, 2, 2)
Schmitt Trigger Input: No
Supplier Device Package: 16-CDIP
Number of Circuits: 3
Description: IC XOR/XNOR GATE 3-CIR 16-CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Logic Type: XOR/XNOR Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 6 Input (2, 2, 2)
Schmitt Trigger Input: No
Supplier Device Package: 16-CDIP
Number of Circuits: 3
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 217+ | 2.07 EUR |
| MC10H107PG |
|
Hersteller: onsemi
Description: IC XOR/XNOR 3-CIR 6-IN 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Logic Type: 2 Input XOR/XNOR
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 6 Input (2, 2, 2)
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 3
Description: IC XOR/XNOR 3-CIR 6-IN 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Logic Type: 2 Input XOR/XNOR
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 6 Input (2, 2, 2)
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 3
auf Bestellung 10113 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 3.06 EUR |
| 74ABT244CMSA |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SSOP
Description: IC BUFF NON-INVERT 5.5V 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ABT244CMSAX |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SSOP
Description: IC BUFF NON-INVERT 5.5V 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ABT244CSCX |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Description: IC BUFF NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N24C16UDTG |
|
Hersteller: onsemi
Description: IC EEPROM 16KBIT I2C US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: US8
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: US8
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 9000+ | 0.31 EUR |
| 21000+ | 0.3 EUR |
| SMF24AT1 |
|
Hersteller: onsemi
Description: TVS DIODE 24VWM 38.9VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 38.9VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1803S-E |
|
Hersteller: onsemi
Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NB7L585MNTWG |
|
Hersteller: onsemi
Description: IC CLK BUFFER 2:6 5GHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer, Data
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 2:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Frequency - Max: 5 GHz
Description: IC CLK BUFFER 2:6 5GHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer, Data
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 2:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Frequency - Max: 5 GHz
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 12.66 EUR |
| NB7L585MNTWG |
|
Hersteller: onsemi
Description: IC CLK BUFFER 2:6 5GHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer, Data
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 2:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Frequency - Max: 5 GHz
Description: IC CLK BUFFER 2:6 5GHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer, Data
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 2:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Frequency - Max: 5 GHz
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.99 EUR |
| 10+ | 18.37 EUR |
| 25+ | 17.61 EUR |
| 100+ | 15.51 EUR |
| 250+ | 14.75 EUR |
| 500+ | 13.8 EUR |