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SZESD8551N2T5G SZESD8551N2T5G onsemi ESD8551-D.PDF Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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23+0.79 EUR
24+0.76 EUR
100+0.74 EUR
500+0.65 EUR
1000+0.17 EUR
2000+0.15 EUR
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MMSZ5254BT1 MMSZ5254BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 27V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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CM6320 CM6320 onsemi CM6320.pdf Description: FILTER RC(PI) 70 OHMS ESD SMD
Packaging: Bulk
Package / Case: 24-UFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 30pF
Height: 0.025" (0.64mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 10
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MC79L24ACPRPG MC79L24ACPRPG onsemi mc79l00-d.pdf Description: IC REG LINEAR -24V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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MC79L24ACPRPG MC79L24ACPRPG onsemi mc79l00-d.pdf Description: IC REG LINEAR -24V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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FSL518HPG FSL518HPG onsemi fsl538hr-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Flyback
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start
Power (Watts): 15 W
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1000+1.11 EUR
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MC79L18ACPG MC79L18ACPG onsemi ONSM-S-A0002808891-1.pdf?t.download=true&u=5oefqw Description: FIXED NEGATIVE STANDARD REGULATO
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -18V
PSRR: 48dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
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NVMJD010N10MCLTWG NVMJD010N10MCLTWG onsemi nvmjd010n10mcl-d.pdf Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJD010N10MCLTWG NVMJD010N10MCLTWG onsemi nvmjd010n10mcl-d.pdf Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9503L-F085 FDB9503L-F085 onsemi fdb9503l_f085-d.pdf Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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FDB9503L-F085 FDB9503L-F085 onsemi fdb9503l_f085-d.pdf Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 654 Stücke:
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10+5.81 EUR
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FDB9409-F085 FDB9409-F085 onsemi fdb9409_f085-d.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9409-F085 FDB9409-F085 onsemi fdb9409_f085-d.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LM393N LM393N onsemi lm393-d.pdf Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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MPSA93 MPSA93 onsemi MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
auf Bestellung 77302 Stücke:
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MPSA93 MPSA93 onsemi MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NP1100SBT3G NP1100SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 90V 80A DO214AA
Packaging: Bulk
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
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BTA08-800CW3LFG BTA08-800CW3LFG onsemi ONSMS22607-1.pdf?t.download=true&u=5oefqw Description: TRIAC 600V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
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2SJ615-TD-E onsemi Description: PCH 4V DRIVE SERIES
Packaging: Bulk
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EFC4K105NUZTDG EFC4K105NUZTDG onsemi efc4k105nuz-d.pdf Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
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EFC4K105NUZTDG EFC4K105NUZTDG onsemi efc4k105nuz-d.pdf Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
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EFC2K102NUZTDG EFC2K102NUZTDG onsemi Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
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EFC2K102NUZTDG EFC2K102NUZTDG onsemi Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
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500+0.78 EUR
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NLSX3013BFCT1G NLSX3013BFCT1G onsemi Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Packaging: Bulk
Features: Auto-Direction Sensing
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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NLSX3013FCT1G NLSX3013FCT1G onsemi Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Packaging: Bulk
Features: Auto-Direction Sensing
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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NTBG030N120M3S NTBG030N120M3S onsemi NTBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
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NTBG030N120M3S NTBG030N120M3S onsemi NTBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
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NTH4L030N120M3S NTH4L030N120M3S onsemi nth4l030n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
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NTHL030N120M3S NTHL030N120M3S onsemi nthl030n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
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NVBG030N120M3S NVBG030N120M3S onsemi NVBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
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NVBG030N120M3S NVBG030N120M3S onsemi NVBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
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NVH4L030N120M3S NVH4L030N120M3S onsemi nvh4l030n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
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1SMA5921BT3 1SMA5921BT3 onsemi %28SZ%291SMA59xxBT3%28G%29.pdf Description: DIODE ZENER 6.8V 1.5W SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 5.2 V
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NCV91300MNWBTXG onsemi ncv91300-d.pdf Description: IC REG BUCK PROG 0.6V 3A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 2.15MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 1.9V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
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MM74HC244SJX MM74HC244SJX onsemi mm74hc244-d.pdf Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
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MM74HC244SJX MM74HC244SJX onsemi mm74hc244-d.pdf Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
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MC74LCX14DR2 MC74LCX14DR2 onsemi mc74lcx14-d.pdf Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
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MC74LCX14MELG MC74LCX14MELG onsemi mc74lcx14-d.pdf Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
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74LCX14SJX 74LCX14SJX onsemi FAIRS46351-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER
Packaging: Bulk
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NXH80T120L3Q0P3G onsemi nxh80t120l3q0s3g-d.pdf Description: PIM GENERATION3 Q0PACK 1200V, 80
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 188 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18150 pF @ 20 V
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NXH450N65L4Q2F2PG NXH450N65L4Q2F2PG onsemi nxh450n65l4q2f2sg-d.pdf Description: 650V 450A 3-LEVEL NPC INVERTER M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 36-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
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NXH450N65L4Q2F2S1G NXH450N65L4Q2F2S1G onsemi nxh450n65l4q2f2s1g-d.pdf Description: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
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NRVSRD620VCTT4G NRVSRD620VCTT4G onsemi msrd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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NRVSRD620VCTT4G NRVSRD620VCTT4G onsemi msrd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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MPS2907ARLRM MPS2907ARLRM onsemi MPS2907%20SERIES.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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2SA2039-E 2SA2039-E onsemi en6912-d.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2SA2040-E 2SA2040-E onsemi en6913-d.pdf Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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LA5735M-TE-L-E LA5735M-TE-L-E onsemi LA5735M.pdf Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
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LV8013T-A-TLM-E LV8013T-A-TLM-E onsemi LV8013T.pdf Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
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LV8013T-A-TLM-E LV8013T-A-TLM-E onsemi LV8013T.pdf Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
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FLZ12VC FLZ12VC onsemi FAIRS44737-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
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FLZ12VC FLZ12VC onsemi FAIRS44737-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
Produkt ist nicht verfügbar
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FAN3227CMX FAN3227CMX onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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FAN3227CMX FAN3227CMX onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
auf Bestellung 11231 Stücke:
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100+2.19 EUR
250+1.92 EUR
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FAN3223TMX-F085 FAN3223TMX-F085 onsemi ONSM-S-A0004903499-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1SMF16BT3 1SMF16BT3 onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1SMF16BT3G 1SMF16BT3G onsemi Description: TVS ZENER 175W 16V SOD123FL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SMF16BT1 1SMF16BT1 onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1SMF16BT1G 1SMF16BT1G onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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NRTS6100TFSTWG NRTS6100TFSTWG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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SZESD8551N2T5G ESD8551-D.PDF
SZESD8551N2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
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Anzahl Preis
23+0.79 EUR
24+0.76 EUR
100+0.74 EUR
500+0.65 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 23
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MMSZ5254BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5254BT1
Hersteller: onsemi
Description: DIODE ZENER 27V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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CM6320 CM6320.pdf
CM6320
Hersteller: onsemi
Description: FILTER RC(PI) 70 OHMS ESD SMD
Packaging: Bulk
Package / Case: 24-UFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 30pF
Height: 0.025" (0.64mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 10
auf Bestellung 5000 Stücke:
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Anzahl Preis
1268+0.40 EUR
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MC79L24ACPRPG mc79l00-d.pdf
MC79L24ACPRPG
Hersteller: onsemi
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 9987 Stücke:
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17+1.04 EUR
29+0.62 EUR
35+0.51 EUR
100+0.39 EUR
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500+0.29 EUR
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MC79L24ACPRPG mc79l00-d.pdf
MC79L24ACPRPG
Hersteller: onsemi
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 8000 Stücke:
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Anzahl Preis
2000+0.23 EUR
4000+0.21 EUR
6000+0.20 EUR
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FSL518HPG fsl538hr-d.pdf
FSL518HPG
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Flyback
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start
Power (Watts): 15 W
auf Bestellung 2968 Stücke:
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Anzahl Preis
7+2.62 EUR
10+2.34 EUR
50+2.22 EUR
100+1.71 EUR
250+1.51 EUR
500+1.43 EUR
1000+1.11 EUR
2500+1.05 EUR
Mindestbestellmenge: 7
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MC79L18ACPG ONSM-S-A0002808891-1.pdf?t.download=true&u=5oefqw
MC79L18ACPG
Hersteller: onsemi
Description: FIXED NEGATIVE STANDARD REGULATO
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -18V
PSRR: 48dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 43130 Stücke:
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Anzahl Preis
2609+0.20 EUR
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NVMJD010N10MCLTWG nvmjd010n10mcl-d.pdf
NVMJD010N10MCLTWG
Hersteller: onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJD010N10MCLTWG nvmjd010n10mcl-d.pdf
NVMJD010N10MCLTWG
Hersteller: onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9503L-F085 fdb9503l_f085-d.pdf
FDB9503L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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FDB9503L-F085 fdb9503l_f085-d.pdf
FDB9503L-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.31 EUR
10+5.81 EUR
100+4.33 EUR
Mindestbestellmenge: 3
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FDB9409-F085 fdb9409_f085-d.pdf
FDB9409-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB9409-F085 fdb9409_f085-d.pdf
FDB9409-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LM393N lm393-d.pdf
LM393N
Hersteller: onsemi
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
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MPSA93 MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf
MPSA93
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
auf Bestellung 77302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3122+0.16 EUR
Mindestbestellmenge: 3122
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MPSA93 MPSA%2CMPSL%2CFTSOL%2CPE%20Type.pdf
MPSA93
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NP1100SBT3G NPSERIES-D.pdf
NP1100SBT3G
Hersteller: onsemi
Description: THYRISTOR 90V 80A DO214AA
Packaging: Bulk
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1268+0.38 EUR
Mindestbestellmenge: 1268
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BTA08-800CW3LFG ONSMS22607-1.pdf?t.download=true&u=5oefqw
BTA08-800CW3LFG
Hersteller: onsemi
Description: TRIAC 600V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 12119 Stücke:
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Anzahl Preis
195+2.38 EUR
Mindestbestellmenge: 195
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2SJ615-TD-E
Hersteller: onsemi
Description: PCH 4V DRIVE SERIES
Packaging: Bulk
auf Bestellung 73000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1402+0.34 EUR
Mindestbestellmenge: 1402
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EFC4K105NUZTDG efc4k105nuz-d.pdf
EFC4K105NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
Produkt ist nicht verfügbar
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EFC4K105NUZTDG efc4k105nuz-d.pdf
EFC4K105NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
16+1.12 EUR
100+0.87 EUR
500+0.74 EUR
1000+0.60 EUR
2000+0.57 EUR
Mindestbestellmenge: 13
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EFC2K102NUZTDG
EFC2K102NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
Produkt ist nicht verfügbar
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EFC2K102NUZTDG
EFC2K102NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
auf Bestellung 4895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.63 EUR
2000+0.60 EUR
Mindestbestellmenge: 13
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NLSX3013BFCT1G
NLSX3013BFCT1G
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Packaging: Bulk
Features: Auto-Direction Sensing
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 116964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
119+3.91 EUR
Mindestbestellmenge: 119
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NLSX3013FCT1G
NLSX3013FCT1G
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Packaging: Bulk
Features: Auto-Direction Sensing
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 63275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
119+3.91 EUR
Mindestbestellmenge: 119
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NTBG030N120M3S NTBG030N120M3S-D.PDF
NTBG030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Produkt ist nicht verfügbar
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NTBG030N120M3S NTBG030N120M3S-D.PDF
NTBG030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.86 EUR
10+12.40 EUR
100+9.31 EUR
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NTH4L030N120M3S nth4l030n120m3s-d.pdf
NTH4L030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.57 EUR
30+12.48 EUR
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NTHL030N120M3S nthl030n120m3s-d.pdf
NTHL030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.41 EUR
30+11.72 EUR
120+10.03 EUR
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NVBG030N120M3S NVBG030N120M3S-D.PDF
NVBG030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+25.80 EUR
Mindestbestellmenge: 800
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NVBG030N120M3S NVBG030N120M3S-D.PDF
NVBG030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.00 EUR
10+30.46 EUR
100+27.28 EUR
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NVH4L030N120M3S nvh4l030n120m3s-d.pdf
NVH4L030N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 18736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.00 EUR
30+24.23 EUR
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1SMA5921BT3 %28SZ%291SMA59xxBT3%28G%29.pdf
1SMA5921BT3
Hersteller: onsemi
Description: DIODE ZENER 6.8V 1.5W SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: SMA
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 5.2 V
Produkt ist nicht verfügbar
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NCV91300MNWBTXG ncv91300-d.pdf
Hersteller: onsemi
Description: IC REG BUCK PROG 0.6V 3A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 2.15MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 1.9V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Produkt ist nicht verfügbar
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MM74HC244SJX mm74hc244-d.pdf
MM74HC244SJX
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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MM74HC244SJX mm74hc244-d.pdf
MM74HC244SJX
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 6V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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MC74LCX14DR2 mc74lcx14-d.pdf
MC74LCX14DR2
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 6325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2959+0.16 EUR
Mindestbestellmenge: 2959
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MC74LCX14MELG mc74lcx14-d.pdf
MC74LCX14MELG
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2.2V
Input Logic Level - Low: 0.4V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1158+0.43 EUR
Mindestbestellmenge: 1158
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74LCX14SJX FAIRS46351-1.pdf?t.download=true&u=5oefqw
74LCX14SJX
Hersteller: onsemi
Description: IC INVERTER
Packaging: Bulk
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
606+0.78 EUR
Mindestbestellmenge: 606
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NXH80T120L3Q0P3G nxh80t120l3q0s3g-d.pdf
Hersteller: onsemi
Description: PIM GENERATION3 Q0PACK 1200V, 80
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 188 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18150 pF @ 20 V
Produkt ist nicht verfügbar
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NXH450N65L4Q2F2PG nxh450n65l4q2f2sg-d.pdf
NXH450N65L4Q2F2PG
Hersteller: onsemi
Description: 650V 450A 3-LEVEL NPC INVERTER M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 36-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+207.33 EUR
10+178.32 EUR
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NXH450N65L4Q2F2S1G nxh450n65l4q2f2s1g-d.pdf
NXH450N65L4Q2F2S1G
Hersteller: onsemi
Description: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+215.44 EUR
12+186.62 EUR
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NRVSRD620VCTT4G msrd620ct-d.pdf
NRVSRD620VCTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.70 EUR
Mindestbestellmenge: 2500
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NRVSRD620VCTT4G msrd620ct-d.pdf
NRVSRD620VCTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
13+1.37 EUR
100+1.07 EUR
500+0.91 EUR
1000+0.74 EUR
Mindestbestellmenge: 11
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MPS2907ARLRM MPS2907%20SERIES.pdf
MPS2907ARLRM
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 140000 Stücke:
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Anzahl Preis
6662+0.08 EUR
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2SA2039-E en6912-d.pdf
2SA2039-E
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 302655 Stücke:
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Anzahl Preis
705+0.70 EUR
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2SA2040-E en6913-d.pdf
2SA2040-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 9861 Stücke:
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Anzahl Preis
857+0.59 EUR
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LA5735M-TE-L-E LA5735M.pdf
LA5735M-TE-L-E
Hersteller: onsemi
Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
auf Bestellung 1575 Stücke:
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Anzahl Preis
392+1.25 EUR
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LV8013T-A-TLM-E LV8013T.pdf
LV8013T-A-TLM-E
Hersteller: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
Produkt ist nicht verfügbar
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LV8013T-A-TLM-E LV8013T.pdf
LV8013T-A-TLM-E
Hersteller: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
auf Bestellung 60854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
137+3.56 EUR
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FLZ12VC FAIRS44737-1.pdf?t.download=true&u=5oefqw
FLZ12VC
Hersteller: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
Produkt ist nicht verfügbar
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FLZ12VC FAIRS44737-1.pdf?t.download=true&u=5oefqw
FLZ12VC
Hersteller: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
Produkt ist nicht verfügbar
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FAN3227CMX ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3227CMX
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
auf Bestellung 9983 Stücke:
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Anzahl Preis
2500+1.48 EUR
Mindestbestellmenge: 2500
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FAN3227CMX ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3227CMX
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
auf Bestellung 11231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+3.23 EUR
25+2.74 EUR
100+2.19 EUR
250+1.92 EUR
500+1.76 EUR
1000+1.62 EUR
Mindestbestellmenge: 4
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FAN3223TMX-F085 ONSM-S-A0004903499-1.pdf?t.download=true&u=5oefqw
FAN3223TMX-F085
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1SMF16BT3
1SMF16BT3
Hersteller: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1SMF16BT3G
1SMF16BT3G
Hersteller: onsemi
Description: TVS ZENER 175W 16V SOD123FL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SMF16BT1
1SMF16BT1
Hersteller: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1SMF16BT1G
1SMF16BT1G
Hersteller: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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NRTS6100TFSTWG nrts6100tfs-d.pdf
NRTS6100TFSTWG
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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