| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FOD4108SD | onsemi |
 Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 2mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 1844 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FODM121CR2V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 2177 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FL7734MX | onsemi |
Description: IC LED DRIVER CTRLR 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Voltage - Output: 1.5V ~ 5V Mounting Type: Surface Mount Number of Outputs: 1 Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 16-SOIC Voltage - Supply (Min): 6.75V Voltage - Supply (Max): 30V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FL7734MX | onsemi |
Description: IC LED DRIVER CTRLR 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Voltage - Output: 1.5V ~ 5V Mounting Type: Surface Mount Number of Outputs: 1 Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 16-SOIC Voltage - Supply (Min): 6.75V Voltage - Supply (Max): 30V |
auf Bestellung 7460 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
KAI-1010-ABA-CD-BA | onsemi |
Description: INTERLINE CCD IMAGE SENSOR Packaging: Bag Package / Case: 24-DIP Module Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 12V ~ 15V Pixel Size: 9µm x 9µm Active Pixel Array: 1008H x 1018V Supplier Device Package: 24-DIP Frames per Second: 30 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FGA50T65SHD | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22.4ns/73.6ns Switching Energy: 1.28mJ (on), 384µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 87 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 319 W |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FGA6540WDF | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-3PN Td (on/off) @ 25°C: 16.8ns/54.4ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Reverse Recovery Time (trr): 101 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 238 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Part Status: Obsolete Gate Charge: 55.5 nC Test Condition: 400V, 40A, 6Ohm, 15V Switching Energy: 1.37mJ (on), 250µJ (off) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FNA22512A | onsemi |
Description: IGBT IPM 1.2KV 25A 34-PWRDIP MOD Packaging: Tube Package / Case: 34-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 25 A Voltage: 1.2 kV |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FNA23512A | onsemi |
Description: MODULE SPM 1.2V 35A 34PWRDIP Mounting Type: Through Hole Package / Case: 34-PowerDIP Module (1.480", 37.60mm) Packaging: Tube Voltage: 1.2 kV Current: 35 A Voltage - Isolation: 2500Vrms Configuration: 3 Phase Type: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FODM8801CV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 400% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
auf Bestellung 104250 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FAN6604MRMX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Voltage - Start Up: 17 V Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 10V ~ 24V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 82.5% Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FCD2250N80Z | onsemi |
Description: MOSFET N-CH 800V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FDMC8321LDC | onsemi |
Description: MOSFET N-CH 40V 27A DLCOOL33 Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Dual Cool ™ 33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.9W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FODM8801CR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 400% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FSL336LRLX | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7LSOP Power (Watts): 20 W Voltage - Start Up: 8 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: 7-LSOP Voltage - Supply (Vcc/Vdd): 7V ~ 26V Topology: Buck, Flyback Output Isolation: Non-Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 50kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD (7 Leads), Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MCT623SD | onsemi |
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FAN6602RM6X | onsemi |
Description: IC OFFLINE SW FLYBACK SOT23-6 Power (Watts): 40 W Part Status: Obsolete Voltage - Start Up: 16 V Fault Protection: Current Limiting, Over Temperature, Over Voltage Supplier Device Package: SOT-23-6 Voltage - Supply (Vcc/Vdd): 7V ~ 25V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FCD2250N80Z | onsemi |
Description: MOSFET N-CH 800V 2.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V |
auf Bestellung 9463 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC8321LDC | onsemi |
Description: MOSFET N-CH 40V 27A DLCOOL33 Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Dual Cool ™ 33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.9W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 54231 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FODM8801CR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 400% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V |
auf Bestellung 28024 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FSL336LRLX | onsemi |
Description: IC OFFLINE SWITCH MULT TOP 7LSOP Power (Watts): 20 W Voltage - Start Up: 8 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: 7-LSOP Voltage - Supply (Vcc/Vdd): 7V ~ 26V Topology: Buck, Flyback Output Isolation: Non-Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 50kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD (7 Leads), Gull Wing Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MCT623SD | onsemi |
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 1091 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NB3W1900LMNG | onsemi |
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN Ratio - Input:Output: 1:19 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C Input: HCSL Frequency - Max: 133MHz Output: HCSL Mounting Type: Surface Mount Package / Case: 72-VFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 72-QFN (10x10) Differential - Input:Output: Yes/Yes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
STK541UC62K-E | onsemi |
Description: IGBT IPM 600V 10A 23-PWRSIP MOD Voltage: 600 V Current: 10 A Voltage - Isolation: 2000Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Packaging: Tube |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
STK5Q4U362J-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A Current - Peak Output: 20A Current - Output / Channel: 10A Applications: AC Motors Voltage - Supply: 12.5V ~ 17.5V Output Configuration: Half Bridge (3) Operating Temperature: 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 38-DIP Module, 24 Leads Features: Status Flag Packaging: Tube Load Type: Inductive Fault Protection: Current Limiting, UVLO Voltage - Load: 400V (Max) Technology: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
ESD8011MUT5G | onsemi |
Description: TVS DIODE 5.5VWM 19VC 2X3DFN Part Status: Active Power Line Protection: No Power - Peak Pulse: 34W Voltage - Clamping (Max) @ Ipp: 19V Voltage - Breakdown (Min): 6.5V Bidirectional Channels: 1 Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Capacitance @ Frequency: 0.1pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NCL30030B1DR2G | onsemi |
Description: IC LED DRIVER OFFL 500MA 16SOIC Voltage - Supply (Max): 30V Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
TF412ST5G | onsemi |
Description: JFET N-CH 30V 10MA SOT883 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 64000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NCP170AMX300TCG | onsemi |
Description: IC REG LINEAR 3V 150MA 4-XDFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 47dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NCV8152MX330180TCG | onsemi |
Description: IC REG LINEAR 1.8V/3.3V 6-XDFN Qualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 200 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA PSRR: 75dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.8V, 3.3V Supplier Device Package: 6-XDFN (1.2x1.2) Number of Regulators: 2 Voltage - Input (Max): 5.25V Current - Quiescent (Iq): 100 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 150mA, 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 765000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NRVTS245ESFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NTMFS4C05NT1G | onsemi |
Description: MOSFET N-CH 30V 11.9A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 770mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NTMFS4C10NT1G | onsemi |
Description: MOSFET N-CH 30V 8.2A 5DFN Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NTS245SFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FL Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 120 µA @ 45 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
NTS260SFT1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FL Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NVE4153NT1G | onsemi |
Description: MOSFET N-CH 20V 915MA SC89 Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
ESD8011MUT5G | onsemi |
Description: TVS DIODE 5.5VWM 19VC 2X3DFN Part Status: Active Power Line Protection: No Power - Peak Pulse: 34W Voltage - Clamping (Max) @ Ipp: 19V Voltage - Breakdown (Min): 6.5V Bidirectional Channels: 1 Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Capacitance @ Frequency: 0.1pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NCL30030B1DR2G | onsemi |
Description: IC LED DRIVER OFFL 500MA 16SOIC Voltage - Supply (Max): 30V Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Cut Tape (CT) |
auf Bestellung 2470 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
TF412ST5G | onsemi |
Description: JFET N-CH 30V 10MA SOT883 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 64000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NCP170AMX300TCG | onsemi |
Description: IC REG LINEAR 3V 150MA 4-XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 47dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
NRVTS245ESFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
NTMFS4C05NT1G | onsemi |
Description: MOSFET N-CH 30V 11.9A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 770mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 8286 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NTMFS4C10NT1G | onsemi |
Description: MOSFET N-CH 30V 8.2A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 1137 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NTS245SFT1G | onsemi |
Description: DIODE SCHOTTKY 45V 2A SOD123FL Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 120 µA @ 45 V |
auf Bestellung 5362 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NVE4153NT1G | onsemi |
Description: MOSFET N-CH 20V 915MA SC89 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 873 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NTMFS4C06NT1G | onsemi |
Description: MOSFET N-CH 30V 11A/69A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 770mW (Ta), 30.5W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 1875 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NTMFS4C09NT1G | onsemi |
Description: MOSFET N-CH 30V 9A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
auf Bestellung 5310 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FGA6560WDF | onsemi |
Description: IGBT TRENCH FS 650V 120A TO-3PN Current - Collector Pulsed (Icm): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Gate Charge: 84 nC Test Condition: 400V, 60A, 6Ohm, 15V Switching Energy: 2.46mJ (on), 520µJ (off) Td (on/off) @ 25°C: 25.6ns/71ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Reverse Recovery Time (trr): 110 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Power - Max: 306 W Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FDMC86160ET100 | onsemi |
Description: MOSFET N-CH 100V 9A/43A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86260ET150 | onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86340ET80 | onsemi |
Description: MOSFET N-CH 80V 14A/68A POWER33 Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86570LET60 | onsemi |
Description: MOSFET N-CH 60V 18A/87A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FDMS86255ET150 | onsemi |
Description: MOSFET N-CH 150V 10A/63A POWER56 Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FDMS86350ET80 | onsemi |
Description: MOSFET N-CH 80V 25A/198A POWER56 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMS86550ET60 | onsemi |
Description: MOSFET N-CH 60V 32A/245A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FDMS86202ET120 | onsemi |
Description: MOSFET N-CH 120V 13.5/102A PWR56 Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86160ET100 | onsemi |
Description: MOSFET N-CH 100V 9A/43A POWER33 Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V |
auf Bestellung 27583 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86260ET150 | onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33 Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 6265 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86340ET80 | onsemi |
Description: MOSFET N-CH 80V 14A/68A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 12030 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMC86570LET60 | onsemi |
Description: MOSFET N-CH 60V 18A/87A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 3156 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FOD4108SD |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.83 EUR |
| 10+ | 5.01 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.47 EUR |
| FODM121CR2V |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2177 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.62 EUR |
| 1000+ | 0.48 EUR |
| FL7734MX |
|
Hersteller: onsemi
Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.36 EUR |
| 5000+ | 1.29 EUR |
| FL7734MX |
|
Hersteller: onsemi
Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
auf Bestellung 7460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.5 EUR |
| 10+ | 2.82 EUR |
| 25+ | 2.4 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.71 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.48 EUR |
| KAI-1010-ABA-CD-BA |
|
Hersteller: onsemi
Description: INTERLINE CCD IMAGE SENSOR
Packaging: Bag
Package / Case: 24-DIP Module
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 12V ~ 15V
Pixel Size: 9µm x 9µm
Active Pixel Array: 1008H x 1018V
Supplier Device Package: 24-DIP
Frames per Second: 30
Description: INTERLINE CCD IMAGE SENSOR
Packaging: Bag
Package / Case: 24-DIP Module
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 12V ~ 15V
Pixel Size: 9µm x 9µm
Active Pixel Array: 1008H x 1018V
Supplier Device Package: 24-DIP
Frames per Second: 30
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGA50T65SHD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
Description: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.83 EUR |
| FGA6540WDF |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-3PN
Td (on/off) @ 25°C: 16.8ns/54.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 101 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 238 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 55.5 nC
Test Condition: 400V, 40A, 6Ohm, 15V
Switching Energy: 1.37mJ (on), 250µJ (off)
Description: IGBT TRENCH FS 650V 80A TO-3PN
Td (on/off) @ 25°C: 16.8ns/54.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 101 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 238 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 55.5 nC
Test Condition: 400V, 40A, 6Ohm, 15V
Switching Energy: 1.37mJ (on), 250µJ (off)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FNA22512A |
|
Hersteller: onsemi
Description: IGBT IPM 1.2KV 25A 34-PWRDIP MOD
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
Description: IGBT IPM 1.2KV 25A 34-PWRDIP MOD
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 118.12 EUR |
| 12+ | 89.5 EUR |
| FNA23512A |
|
Hersteller: onsemi
Description: MODULE SPM 1.2V 35A 34PWRDIP
Mounting Type: Through Hole
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Packaging: Tube
Voltage: 1.2 kV
Current: 35 A
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase
Type: IGBT
Description: MODULE SPM 1.2V 35A 34PWRDIP
Mounting Type: Through Hole
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Packaging: Tube
Voltage: 1.2 kV
Current: 35 A
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase
Type: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM8801CV |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
auf Bestellung 104250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.27 EUR |
| 10+ | 2.34 EUR |
| 150+ | 1.7 EUR |
| 600+ | 1.5 EUR |
| 1050+ | 1.44 EUR |
| 2100+ | 1.37 EUR |
| 5100+ | 1.3 EUR |
| 10050+ | 1.26 EUR |
| FAN6604MRMX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD2250N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Description: MOSFET N-CH 800V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.2 EUR |
| 5000+ | 1.14 EUR |
| FDMC8321LDC |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 27A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.9 EUR |
| FODM8801CR2V |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.75 EUR |
| 5000+ | 1.68 EUR |
| FSL336LRLX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Power (Watts): 20 W
Voltage - Start Up: 8 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Topology: Buck, Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Power (Watts): 20 W
Voltage - Start Up: 8 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Topology: Buck, Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCT623SD |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.2 EUR |
| FAN6602RM6X |
|
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK SOT23-6
Power (Watts): 40 W
Part Status: Obsolete
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Supplier Device Package: SOT-23-6
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SW FLYBACK SOT23-6
Power (Watts): 40 W
Part Status: Obsolete
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Supplier Device Package: SOT-23-6
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD2250N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Description: MOSFET N-CH 800V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
auf Bestellung 9463 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.4 EUR |
| FDMC8321LDC |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 27A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 54231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.38 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 1.99 EUR |
| FODM8801CR2V |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 400% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
auf Bestellung 28024 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.86 EUR |
| FSL336LRLX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Power (Watts): 20 W
Voltage - Start Up: 8 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Topology: Buck, Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Power (Watts): 20 W
Voltage - Start Up: 8 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Topology: Buck, Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 50kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT623SD |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.92 EUR |
| 11+ | 2.07 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.33 EUR |
| NB3W1900LMNG |
|
Hersteller: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN
Ratio - Input:Output: 1:19
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: HCSL
Frequency - Max: 133MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 72-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 72-QFN (10x10)
Differential - Input:Output: Yes/Yes
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN
Ratio - Input:Output: 1:19
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: HCSL
Frequency - Max: 133MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 72-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 72-QFN (10x10)
Differential - Input:Output: Yes/Yes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STK541UC62K-E |
|
Hersteller: onsemi
Description: IGBT IPM 600V 10A 23-PWRSIP MOD
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Packaging: Tube
Description: IGBT IPM 600V 10A 23-PWRSIP MOD
Voltage: 600 V
Current: 10 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Packaging: Tube
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 42.35 EUR |
| 16+ | 28.94 EUR |
| 104+ | 24.98 EUR |
| STK5Q4U362J-E |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 10A
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 38-DIP Module, 24 Leads
Features: Status Flag
Packaging: Tube
Load Type: Inductive
Fault Protection: Current Limiting, UVLO
Voltage - Load: 400V (Max)
Technology: IGBT
Description: IC HALF BRIDGE DRIVER 10A
Current - Peak Output: 20A
Current - Output / Channel: 10A
Applications: AC Motors
Voltage - Supply: 12.5V ~ 17.5V
Output Configuration: Half Bridge (3)
Operating Temperature: 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 38-DIP Module, 24 Leads
Features: Status Flag
Packaging: Tube
Load Type: Inductive
Fault Protection: Current Limiting, UVLO
Voltage - Load: 400V (Max)
Technology: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESD8011MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.18 EUR |
| 20000+ | 0.17 EUR |
| NCL30030B1DR2G |
|
Hersteller: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TF412ST5G |
|
Hersteller: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 30V 10MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 64000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.18 EUR |
| 16000+ | 0.17 EUR |
| NCP170AMX300TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV8152MX330180TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.8V/3.3V 6-XDFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Supplier Device Package: 6-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.8V/3.3V 6-XDFN
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Supplier Device Package: 6-XDFN (1.2x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 765000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.18 EUR |
| 10000+ | 0.17 EUR |
| NRVTS245ESFT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C05NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.52 EUR |
| 3000+ | 0.33 EUR |
| 4500+ | 0.32 EUR |
| 7500+ | 0.31 EUR |
| NTMFS4C10NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A 5DFN
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTS245SFT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTS260SFT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVE4153NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 20V 915MA SC89
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESD8011MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 34W
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 6.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Capacitance @ Frequency: 0.1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 35+ | 0.61 EUR |
| 50+ | 0.44 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| NCL30030B1DR2G |
|
Hersteller: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Cut Tape (CT)
Description: IC LED DRIVER OFFL 500MA 16SOIC
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Cut Tape (CT)
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.24 EUR |
| 10+ | 3.96 EUR |
| 25+ | 3.37 EUR |
| 100+ | 2.7 EUR |
| 250+ | 2.37 EUR |
| 500+ | 2.17 EUR |
| 1000+ | 1.99 EUR |
| TF412ST5G |
|
Hersteller: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 64000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1 EUR |
| 34+ | 0.62 EUR |
| 50+ | 0.45 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| NCP170AMX300TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS245ESFT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C05NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11.9A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 8286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 25+ | 0.87 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.51 EUR |
| NTMFS4C10NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 8.2A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| NTS245SFT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 5362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 41+ | 0.52 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.2 EUR |
| NVE4153NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 20V 915MA SC89
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 873 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.51 EUR |
| 23+ | 0.93 EUR |
| 50+ | 0.68 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| NTMFS4C06NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 1875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 20+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| NTMFS4C09NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
auf Bestellung 5310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.37 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| FGA6560WDF |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 120A TO-3PN
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Power - Max: 306 W
Packaging: Tube
Description: IGBT TRENCH FS 650V 120A TO-3PN
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Power - Max: 306 W
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86160ET100 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 9A/43A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.14 EUR |
| FDMC86260ET150 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Description: MOSFET N-CH 150V 5.4A/25A PWR33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.89 EUR |
| FDMC86340ET80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Description: MOSFET N-CH 80V 14A/68A POWER33
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.94 EUR |
| FDMC86570LET60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.37 EUR |
| FDMS86255ET150 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 10A/63A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86350ET80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Description: MOSFET N-CH 80V 25A/198A POWER56
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.76 EUR |
| FDMS86550ET60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86202ET120 |
|
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Description: MOSFET N-CH 120V 13.5/102A PWR56
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.13 EUR |
| FDMC86160ET100 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Description: MOSFET N-CH 100V 9A/43A POWER33
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
auf Bestellung 27583 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.53 EUR |
| 10+ | 4.26 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.4 EUR |
| 1000+ | 2.23 EUR |
| FDMC86260ET150 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 6265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 3.87 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.17 EUR |
| 1000+ | 2.01 EUR |
| FDMC86340ET80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 14A/68A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 12030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.88 EUR |
| 10+ | 5.87 EUR |
| 100+ | 4.15 EUR |
| 500+ | 3.59 EUR |
| FDMC86570LET60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 18A/87A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 3156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 10+ | 4.21 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.61 EUR |
| 1000+ | 2.42 EUR |