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NVMFS5C456NLAFT1G NVMFS5C456NLAFT1G onsemi nvmfs5c456nl-d.pdf Description: MOSFET N-CH 40V 87A 5DFN
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 55W (Tc)
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NVMFS5C456NLAFT1G NVMFS5C456NLAFT1G onsemi nvmfs5c456nl-d.pdf Description: MOSFET N-CH 40V 87A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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NVMFS5C646NLAFT1G NVMFS5C646NLAFT1G onsemi nvmfs5c646nl-d.pdf Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C646NLAFT1G NVMFS5C646NLAFT1G onsemi nvmfs5c646nl-d.pdf Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C682NLWFAFT1G NVMFS5C682NLWFAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C682NLWFAFT1G NVMFS5C682NLWFAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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500+1.27 EUR
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NVMFS5C442NWFAFT1G NVMFS5C442NWFAFT1G onsemi nvmfs5c442n-d.pdf Description: MOSFET N-CH 40V 29A/140A 5DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Qualification: AEC-Q101
Grade: Automotive
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NVMFS5C442NWFAFT1G NVMFS5C442NWFAFT1G onsemi nvmfs5c442n-d.pdf Description: MOSFET N-CH 40V 29A/140A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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NVMFS6H824NT1G NVMFS6H824NT1G onsemi nvmfs6h824n-d.pdf Description: MOSFET N-CH 80V 19A/103A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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NVMFS6H824NT1G NVMFS6H824NT1G onsemi nvmfs6h824n-d.pdf Description: MOSFET N-CH 80V 19A/103A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 3115 Stücke:
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10+2.87 EUR
100+1.95 EUR
500+1.57 EUR
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NVMFS5C628NLWFAFT1G NVMFS5C628NLWFAFT1G onsemi nvmfs5c628nl-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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1500+2.15 EUR
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NVMFS5C628NLWFAFT1G NVMFS5C628NLWFAFT1G onsemi nvmfs5c628nl-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
auf Bestellung 2051 Stücke:
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10+4.53 EUR
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NVMFS5C466NLT1G NVMFS5C466NLT1G onsemi nvmfs5c466nl-d.pdf Description: MOSFET N-CH 40V 16A/52A 5DFN
Produkt ist nicht verfügbar
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NVMFS5C466NLT1G NVMFS5C466NLT1G onsemi nvmfs5c466nl-d.pdf Description: MOSFET N-CH 40V 16A/52A 5DFN
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NVMFS6H800NLT1G NVMFS6H800NLT1G onsemi nvmfs6h800nl-d.pdf Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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NVMFS6H800NLT1G NVMFS6H800NLT1G onsemi nvmfs6h800nl-d.pdf Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 5295 Stücke:
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10+6.89 EUR
100+4.95 EUR
500+4.83 EUR
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NVMFS6H801NT1G NVMFS6H801NT1G onsemi nvmfs6h801n-d.pdf Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
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1500+2.07 EUR
3000+2.02 EUR
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NVMFS6H801NT1G NVMFS6H801NT1G onsemi nvmfs6h801n-d.pdf Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 19351 Stücke:
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4+6.31 EUR
10+4.11 EUR
100+2.86 EUR
500+2.48 EUR
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NVMFS5113PLWFT1G NVMFS5113PLWFT1G onsemi nvmfs5113pl-d.pdf Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
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1500+2.24 EUR
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NVMFS5113PLWFT1G NVMFS5113PLWFT1G onsemi nvmfs5113pl-d.pdf Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3458 Stücke:
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10+4.69 EUR
100+3.28 EUR
500+2.71 EUR
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NVMFS5C442NLAFT1G NVMFS5C442NLAFT1G onsemi nvmfs5c442nl-d.pdf Description: MOSFET N-CH 40V 29A/130A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFS5C442NLAFT1G NVMFS5C442NLAFT1G onsemi nvmfs5c442nl-d.pdf Description: MOSFET N-CH 40V 29A/130A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
auf Bestellung 1197 Stücke:
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10+2.75 EUR
100+2.19 EUR
500+1.84 EUR
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NVMFS5C645NLAFT1G NVMFS5C645NLAFT1G onsemi nvmfs5c645nl-d.pdf Description: MOSFET N-CH 60V 22A/100A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFS5C645NLAFT1G NVMFS5C645NLAFT1G onsemi nvmfs5c645nl-d.pdf Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Qualification: AEC-Q101
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12+1.87 EUR
100+1.45 EUR
500+1.24 EUR
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NVMFS5C404NWFAFT1G NVMFS5C404NWFAFT1G onsemi nvmfs5c404n-d.pdf Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C404NWFAFT1G NVMFS5C404NWFAFT1G onsemi nvmfs5c404n-d.pdf Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Qualification: AEC-Q101
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10+7.71 EUR
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NVMFS6H864NWFT1G NVMFS6H864NWFT1G onsemi nvmfs6h864n-d.pdf Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
1500+0.82 EUR
3000+0.73 EUR
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NVMFS6H864NWFT1G NVMFS6H864NWFT1G onsemi nvmfs6h864n-d.pdf Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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12+1.78 EUR
100+1.2 EUR
500+0.96 EUR
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NVMFS5C628NLAFT1G NVMFS5C628NLAFT1G onsemi nvmfs5c628nl-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFS5C628NLAFT1G NVMFS5C628NLAFT1G onsemi nvmfs5c628nl-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 369 Stücke:
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3+7.38 EUR
10+4.83 EUR
100+3.39 EUR
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NVMFS6H824NLT1G NVMFS6H824NLT1G onsemi nvmfs6h824nl-d.pdf Description: MOSFET N-CH 80V 20A/110A 5DFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Produkt ist nicht verfügbar
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NVMFS6H824NLT1G NVMFS6H824NLT1G onsemi nvmfs6h824nl-d.pdf Description: MOSFET N-CH 80V 20A/110A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 879 Stücke:
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4+6.97 EUR
10+4.57 EUR
100+3.2 EUR
500+2.84 EUR
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NCP160BMX514TBG NCP160BMX514TBG onsemi ncp160-d.pdf Description: IC REG LINEAR 5.14V 250MA 4XDFN
auf Bestellung 81000 Stücke:
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NCP1568S02DBR2G NCP1568S02DBR2G onsemi ncp1568-d.pdf Description: IC OFFLINE SW FLYBACK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 79%
Frequency - Switching: 100kHz ~ 1MHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.2 V
Control Features: Frequency Control, Soft Start
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BCW30LT3 BCW30LT3 onsemi MOTOD205-2-174.pdf?t.download=true&u=5oefqw Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
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BCW30LT1 BCW30LT1 onsemi bcw30lt1-d.pdf Description: TRANS PNP GP 32V 100MA SOT-23
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 126000 Stücke:
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CAT3616HV4-GT2 CAT3616HV4-GT2 onsemi cat3616-d.pdf Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 31mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Dimming: Multi-Step
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SA1249S onsemi ONSMS23076-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 160V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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AP1302CSSL00SMGAH3-GEVB AP1302CSSL00SMGAH3-GEVB onsemi Description: BOARD EVAL 13 MP CO-PROCESSOR 12
Supplied Contents: Board(s)
Utilized IC / Part: AP1302CS
Type: Video
Function: Video Processing
Packaging: Bulk
Produkt ist nicht verfügbar
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NCP1075BAP130G NCP1075BAP130G onsemi NCP1076A-D.PDF Description: ENHANCED OFF LINE SWITCHER FOR R
Part Status: Active
Packaging: Bulk
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MBR4015CTLH MBR4015CTLH onsemi Description: DIODE SCHOTTKY
Produkt ist nicht verfügbar
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NE553ANG onsemi Description: DUAL LOW NOISE OP-AMP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NCP333FCT2GEVB onsemi NCP333FCT2GEVB_TEST_PROCEDURE.PDF Description: EVAL BOARD FOR NCP333
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP333
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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CPH6901-TL-E onsemi Description: NCH+NCH J-FET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NJVMJD340T4G NJVMJD340T4G onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.56 W
Qualification: AEC-Q101
auf Bestellung 899 Stücke:
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10+2.14 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
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MOC3071SR2VM MOC3071SR2VM onsemi moc3072m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL, VDE
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
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MMSD459A MMSD459A onsemi FAIRS45394-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
auf Bestellung 51000 Stücke:
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9458+0.058 EUR
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MC74ACT160N MC74ACT160N onsemi MOTOS03373-1.pdf?t.download=true&u=5oefqw Description: DECADE COUNTER, ACT SERIES, SYNC
Packaging: Bulk
Part Status: Active
auf Bestellung 2007 Stücke:
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962+0.61 EUR
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NCV8881PWR2G NCV8881PWR2G onsemi ncv8881-d.pdf Description: IC REG TRIPLE BUCK/LINEAR 16SOIC
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NCV887200D1R2G NCV887200D1R2G onsemi ONSM-S-A0009067417-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE GRADE NON-SYNCHRONOUS
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260+2.25 EUR
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NCV8871FLYGEVB NCV8871FLYGEVB onsemi ncv8871-d.pdf Description: EVAL BOARD FOR NCV8871
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 6V ~ 25V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 170kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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NCV8871SEPGEVB NCV8871SEPGEVB onsemi ncv8871-d.pdf Description: EVAL BOARD FOR NCV8871
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 6V ~ 40V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 170kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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NCV887801D1R2G NCV887801D1R2G onsemi ncv8878-d.pdf Description: IC REG CTRLR BOOST 8SOIC
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NCV887101D1R2G NCV887101D1R2G onsemi ncv8871-d.pdf Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Topology: Boost, Flyback
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Qualification: AEC-Q100
Number of Outputs: 1
Grade: Automotive
Clock Sync: Yes
Duty Cycle (Max): 86%
Output Phases: 1
Control Features: Current Limit, Enable
Function: Step-Up, Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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FUSB302TV10MPX FUSB302TV10MPX onsemi fusb302t-d.pdf Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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6000+1.12 EUR
9000+1.11 EUR
15000+1.09 EUR
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FUSB302TV01MPX FUSB302TV01MPX onsemi fusb302t-d.pdf Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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FUSB302TV11MPX FUSB302TV11MPX onsemi fusb302t-d.pdf Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZX84C10_S00Z BZX84C10_S00Z onsemi BZX84C3V3-C33_Rev1.10_Nov2015.pdf Description: DIODE ZENER 10.05V 550MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10.05 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
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TND314S-TL-2H onsemi Description: IC HALF BRIDGE DRIVER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 8Ohm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: 8-SOIC
Load Type: Inductive
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SVC211SPA-C-AL onsemi Description: FM VARICAP TWIN VR 8V
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NVMFS5C456NLAFT1G nvmfs5c456nl-d.pdf
NVMFS5C456NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 87A 5DFN
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 55W (Tc)
Produkt ist nicht verfügbar
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NVMFS5C456NLAFT1G nvmfs5c456nl-d.pdf
NVMFS5C456NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 87A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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NVMFS5C646NLAFT1G nvmfs5c646nl-d.pdf
NVMFS5C646NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C646NLAFT1G nvmfs5c646nl-d.pdf
NVMFS5C646NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2585 Stücke:
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5+4.61 EUR
10+3.15 EUR
100+2.26 EUR
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NVMFS5C682NLWFAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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1500+1.11 EUR
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NVMFS5C682NLWFAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1906 Stücke:
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6+3.72 EUR
10+2.38 EUR
100+1.61 EUR
500+1.27 EUR
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NVMFS5C442NWFAFT1G nvmfs5c442n-d.pdf
NVMFS5C442NWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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NVMFS5C442NWFAFT1G nvmfs5c442n-d.pdf
NVMFS5C442NWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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NVMFS6H824NT1G nvmfs6h824n-d.pdf
NVMFS6H824NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
1500+1.38 EUR
3000+1.29 EUR
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NVMFS6H824NT1G nvmfs6h824n-d.pdf
NVMFS6H824NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 3115 Stücke:
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5+4.44 EUR
10+2.87 EUR
100+1.95 EUR
500+1.57 EUR
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NVMFS5C628NLWFAFT1G nvmfs5c628nl-d.pdf
NVMFS5C628NLWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+2.15 EUR
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NVMFS5C628NLWFAFT1G nvmfs5c628nl-d.pdf
NVMFS5C628NLWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
auf Bestellung 2051 Stücke:
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4+6.95 EUR
10+4.53 EUR
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NVMFS5C466NLT1G nvmfs5c466nl-d.pdf
NVMFS5C466NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 16A/52A 5DFN
Produkt ist nicht verfügbar
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NVMFS5C466NLT1G nvmfs5c466nl-d.pdf
NVMFS5C466NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 16A/52A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H800NLT1G nvmfs6h800nl-d.pdf
NVMFS6H800NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.95 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H800NLT1G nvmfs6h800nl-d.pdf
NVMFS6H800NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 5295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.31 EUR
10+6.89 EUR
100+4.95 EUR
500+4.83 EUR
Mindestbestellmenge: 3 Stücke
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NVMFS6H801NT1G nvmfs6h801n-d.pdf
NVMFS6H801NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.07 EUR
3000+2.02 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H801NT1G nvmfs6h801n-d.pdf
NVMFS6H801NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 19351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.31 EUR
10+4.11 EUR
100+2.86 EUR
500+2.48 EUR
Mindestbestellmenge: 4 Stücke
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NVMFS5113PLWFT1G nvmfs5113pl-d.pdf
NVMFS5113PLWFT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.24 EUR
3000+2.21 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS5113PLWFT1G nvmfs5113pl-d.pdf
NVMFS5113PLWFT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3458 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.16 EUR
10+4.69 EUR
100+3.28 EUR
500+2.71 EUR
Mindestbestellmenge: 3 Stücke
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NVMFS5C442NLAFT1G nvmfs5c442nl-d.pdf
NVMFS5C442NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 29A/130A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C442NLAFT1G nvmfs5c442nl-d.pdf
NVMFS5C442NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 29A/130A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.75 EUR
100+2.19 EUR
500+1.84 EUR
Mindestbestellmenge: 7 Stücke
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NVMFS5C645NLAFT1G nvmfs5c645nl-d.pdf
NVMFS5C645NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C645NLAFT1G nvmfs5c645nl-d.pdf
NVMFS5C645NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.28 EUR
12+1.87 EUR
100+1.45 EUR
500+1.24 EUR
Mindestbestellmenge: 10 Stücke
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NVMFS5C404NWFAFT1G nvmfs5c404n-d.pdf
NVMFS5C404NWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.56 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C404NWFAFT1G nvmfs5c404n-d.pdf
NVMFS5C404NWFAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.47 EUR
10+7.71 EUR
100+5.58 EUR
Mindestbestellmenge: 2 Stücke
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NVMFS6H864NWFT1G nvmfs6h864n-d.pdf
NVMFS6H864NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.82 EUR
3000+0.73 EUR
4500+0.71 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H864NWFT1G nvmfs6h864n-d.pdf
NVMFS6H864NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 53920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
12+1.78 EUR
100+1.2 EUR
500+0.96 EUR
Mindestbestellmenge: 8 Stücke
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NVMFS5C628NLAFT1G nvmfs5c628nl-d.pdf
NVMFS5C628NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C628NLAFT1G nvmfs5c628nl-d.pdf
NVMFS5C628NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.38 EUR
10+4.83 EUR
100+3.39 EUR
Mindestbestellmenge: 3 Stücke
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NVMFS6H824NLT1G nvmfs6h824nl-d.pdf
NVMFS6H824NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H824NLT1G nvmfs6h824nl-d.pdf
NVMFS6H824NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 879 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.97 EUR
10+4.57 EUR
100+3.2 EUR
500+2.84 EUR
Mindestbestellmenge: 4 Stücke
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NCP160BMX514TBG ncp160-d.pdf
NCP160BMX514TBG
Hersteller: onsemi
Description: IC REG LINEAR 5.14V 250MA 4XDFN
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3675+0.15 EUR
Mindestbestellmenge: 3675 Stücke
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NCP1568S02DBR2G ncp1568-d.pdf
NCP1568S02DBR2G
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 79%
Frequency - Switching: 100kHz ~ 1MHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.2 V
Control Features: Frequency Control, Soft Start
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+5.78 EUR
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BCW30LT3 MOTOD205-2-174.pdf?t.download=true&u=5oefqw
BCW30LT3
Hersteller: onsemi
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
auf Bestellung 90000 Stücke:
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AnzahlPrivatkunde
9458+0.055 EUR
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BCW30LT1 bcw30lt1-d.pdf
BCW30LT1
Hersteller: onsemi
Description: TRANS PNP GP 32V 100MA SOT-23
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 126000 Stücke:
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9458+0.055 EUR
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CAT3616HV4-GT2 cat3616-d.pdf
CAT3616HV4-GT2
Hersteller: onsemi
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 31mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Dimming: Multi-Step
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SA1249S ONSMS23076-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
auf Bestellung 44373 Stücke:
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1212+0.45 EUR
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AP1302CSSL00SMGAH3-GEVB
AP1302CSSL00SMGAH3-GEVB
Hersteller: onsemi
Description: BOARD EVAL 13 MP CO-PROCESSOR 12
Supplied Contents: Board(s)
Utilized IC / Part: AP1302CS
Type: Video
Function: Video Processing
Packaging: Bulk
Produkt ist nicht verfügbar
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NCP1075BAP130G NCP1076A-D.PDF
NCP1075BAP130G
Hersteller: onsemi
Description: ENHANCED OFF LINE SWITCHER FOR R
Part Status: Active
Packaging: Bulk
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
294+1.83 EUR
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MBR4015CTLH
MBR4015CTLH
Hersteller: onsemi
Description: DIODE SCHOTTKY
Produkt ist nicht verfügbar
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NE553ANG
Hersteller: onsemi
Description: DUAL LOW NOISE OP-AMP
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NCP333FCT2GEVB NCP333FCT2GEVB_TEST_PROCEDURE.PDF
Hersteller: onsemi
Description: EVAL BOARD FOR NCP333
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP333
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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CPH6901-TL-E
Hersteller: onsemi
Description: NCH+NCH J-FET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NJVMJD340T4G mjd340-d.pdf
NJVMJD340T4G
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.56 W
Qualification: AEC-Q101
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.33 EUR
100+0.88 EUR
500+0.68 EUR
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MOC3071SR2VM moc3072m-d.pdf
MOC3071SR2VM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL, VDE
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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MMSD459A FAIRS45394-1.pdf?t.download=true&u=5oefqw
MMSD459A
Hersteller: onsemi
Description: DIODE STANDARD SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9458+0.058 EUR
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MC74ACT160N MOTOS03373-1.pdf?t.download=true&u=5oefqw
MC74ACT160N
Hersteller: onsemi
Description: DECADE COUNTER, ACT SERIES, SYNC
Packaging: Bulk
Part Status: Active
auf Bestellung 2007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
962+0.61 EUR
Mindestbestellmenge: 962 Stücke
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NCV8881PWR2G ncv8881-d.pdf
NCV8881PWR2G
Hersteller: onsemi
Description: IC REG TRIPLE BUCK/LINEAR 16SOIC
Produkt ist nicht verfügbar
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NCV887200D1R2G ONSM-S-A0009067417-1.pdf?t.download=true&u=5oefqw
NCV887200D1R2G
Hersteller: onsemi
Description: AUTOMOTIVE GRADE NON-SYNCHRONOUS
auf Bestellung 1702 Stücke:
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AnzahlPrivatkunde
260+2.25 EUR
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NCV8871FLYGEVB ncv8871-d.pdf
NCV8871FLYGEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCV8871
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 6V ~ 25V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 170kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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NCV8871SEPGEVB ncv8871-d.pdf
NCV8871SEPGEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCV8871
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 6V ~ 40V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 170kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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NCV887801D1R2G ncv8878-d.pdf
NCV887801D1R2G
Hersteller: onsemi
Description: IC REG CTRLR BOOST 8SOIC
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NCV887101D1R2G ncv8871-d.pdf
NCV887101D1R2G
Hersteller: onsemi
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Topology: Boost, Flyback
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Qualification: AEC-Q100
Number of Outputs: 1
Grade: Automotive
Clock Sync: Yes
Duty Cycle (Max): 86%
Output Phases: 1
Control Features: Current Limit, Enable
Function: Step-Up, Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 322 Stücke:
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241+2.45 EUR
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FUSB302TV10MPX fusb302t-d.pdf
FUSB302TV10MPX
Hersteller: onsemi
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.14 EUR
6000+1.12 EUR
9000+1.11 EUR
15000+1.09 EUR
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FUSB302TV01MPX fusb302t-d.pdf
FUSB302TV01MPX
Hersteller: onsemi
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FUSB302TV11MPX fusb302t-d.pdf
FUSB302TV11MPX
Hersteller: onsemi
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZX84C10_S00Z BZX84C3V3-C33_Rev1.10_Nov2015.pdf
BZX84C10_S00Z
Hersteller: onsemi
Description: DIODE ZENER 10.05V 550MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10.05 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TND314S-TL-2H
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 8Ohm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: 8-SOIC
Load Type: Inductive
auf Bestellung 2908 Stücke:
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AnzahlPrivatkunde
313+1.71 EUR
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SVC211SPA-C-AL
Hersteller: onsemi
Description: FM VARICAP TWIN VR 8V
auf Bestellung 115200 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2219 Stücke
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