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ADS12B3-ASARH ADS12B3-ASARH Sanan Power Semiconductor ADS12B3-ASARH.pdf Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.51 EUR
Mindestbestellmenge: 5000
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ADS12B3-ASARH ADS12B3-ASARH Sanan Power Semiconductor ADS12B3-ASARH.pdf Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 6248 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
16+1.1 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 11
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SDS065J002D3-ISARH SDS065J002D3-ISARH Sanan Power Semiconductor SananSemiconductorSDS065J002D3Datasheet.pdf Description: DIODE SIL CARB 650V 9A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J002D3-ISARH SDS065J002D3-ISARH Sanan Power Semiconductor SananSemiconductorSDS065J002D3Datasheet.pdf Description: DIODE SIL CARB 650V 9A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
14+1.34 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 10
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SDS065J004C3-ISATH SDS065J004C3-ISATH Sanan Power Semiconductor SananSemiconductorSDS065J004C3Datasheet.pdf Description: DIODE SIL CARB 650V 14A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
auf Bestellung 199 Stücke:
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7+2.75 EUR
50+1.17 EUR
100+1.09 EUR
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SDS065J006C3-ISATH SDS065J006C3-ISATH Sanan Power Semiconductor SananSemiconductorSDS065J006C3Datasheet.pdf Description: DIODE SIL CARB 650V 20A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 200 Stücke:
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4+4.66 EUR
50+2.29 EUR
100+2.06 EUR
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SDS065J006E3-ISARH SDS065J006E3-ISARH Sanan Power Semiconductor SananSemiconductorSDS065J006E3Datasheet.pdf Description: DIODE SIL CARB 650V 20A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J006E3-ISARH SDS065J006E3-ISARH Sanan Power Semiconductor SananSemiconductorSDS065J006E3Datasheet.pdf Description: DIODE SIL CARB 650V 20A TO2632L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
10+2.6 EUR
100+1.79 EUR
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SDS065J006S3-ISBRH SDS065J006S3-ISBRH Sanan Power Semiconductor SananSemiconductorSDS065J006S3Datasheet.pdf Description: DIODE SIL CARBIDE 650V 23A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J006S3-ISBRH SDS065J006S3-ISBRH Sanan Power Semiconductor SananSemiconductorSDS065J006S3Datasheet.pdf Description: DIODE SIL CARBIDE 650V 23A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
auf Bestellung 200 Stücke:
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4+4.4 EUR
10+2.85 EUR
100+1.97 EUR
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SDS065J008C3-ISATH SDS065J008C3-ISATH Sanan Power Semiconductor SananSemiconductorSDS065J008C3Datasheet.pdf Description: DIODE SIL CARB 650V 25A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 195 Stücke:
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5+4.07 EUR
50+2.41 EUR
100+1.97 EUR
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SDS065J008N3-ISATH SDS065J008N3-ISATH Sanan Power Semiconductor SananSemiconductorSDS065J008N3Datasheet.pdf Description: DIODE SIL CARB 650V 20A TO220N2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.77 EUR
50+2.89 EUR
100+2.61 EUR
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SDS065J008S3-ISBRH SDS065J008S3-ISBRH Sanan Power Semiconductor SDS065J008S3-ISBRH.pdf Description: DIODE SIL CARBIDE 650V 29A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.89 EUR
10+3.18 EUR
100+2.21 EUR
Mindestbestellmenge: 4
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SDS065J008S3-ISBRH SDS065J008S3-ISBRH Sanan Power Semiconductor SDS065J008S3-ISBRH.pdf Description: DIODE SIL CARBIDE 650V 29A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J010C3-ISATH SDS065J010C3-ISATH Sanan Power Semiconductor SDS065J010C3-ISATH.pdf Description: DIODE SIL CARB 650V 30A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.23 EUR
50+3.14 EUR
100+2.84 EUR
Mindestbestellmenge: 3
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SDS065J010D3-ISARH SDS065J010D3-ISARH Sanan Power Semiconductor SDS065J010D3-ISARH.pdf Description: DIODE SIL CARB 650V 29A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.36 EUR
100+2.34 EUR
Mindestbestellmenge: 4
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SDS065J010D3-ISARH SDS065J010D3-ISARH Sanan Power Semiconductor SDS065J010D3-ISARH.pdf Description: DIODE SIL CARB 650V 29A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J010E3-ISARH SDS065J010E3-ISARH Sanan Power Semiconductor SDS065J010E3-ISARH.pdf Description: DIODE SIL CARB 650V 30A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J010E3-ISARH SDS065J010E3-ISARH Sanan Power Semiconductor SDS065J010E3-ISARH.pdf Description: DIODE SIL CARB 650V 30A TO2632L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.35 EUR
10+3.5 EUR
100+2.45 EUR
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SDS065J010N3-ISATH SDS065J010N3-ISATH Sanan Power Semiconductor SDS065J010N3-ISATH.pdf Description: DIODE SIL CARB 650V 26A TO220N2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
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3+6.62 EUR
50+3.35 EUR
100+3.04 EUR
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SDS065J010S3-ISBRH SDS065J010S3-ISBRH Sanan Power Semiconductor SDS065J010S3-ISBRH.pdf Description: DIODE 650V-10A DFN8*8-4L
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 300 Stücke:
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4+5.23 EUR
10+3.65 EUR
100+2.55 EUR
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SDS065J010S3-ISBRH SDS065J010S3-ISBRH Sanan Power Semiconductor SDS065J010S3-ISBRH.pdf Description: DIODE 650V-10A DFN8*8-4L
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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SDS065J012S3-ISARH SDS065J012S3-ISARH Sanan Power Semiconductor SDS065J012S3-ISARH.pdf Description: DIODE SIL CARBIDE 650V 44A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J012S3-ISARH SDS065J012S3-ISARH Sanan Power Semiconductor SDS065J012S3-ISARH.pdf Description: DIODE SIL CARBIDE 650V 44A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.27 EUR
10+4.13 EUR
100+2.91 EUR
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SDS065J016C3-ISATH SDS065J016C3-ISATH Sanan Power Semiconductor SDS065J016C3-ISATH.pdf Description: DIODE SIL CARB 650V 44A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
50+2.69 EUR
100+2.63 EUR
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SDS065J016G3-ISATH SDS065J016G3-ISATH Sanan Power Semiconductor SDS065J016G3-ISATH.pdf Description: DIODE ARR SIC 650V 25A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
30+4.39 EUR
120+4.04 EUR
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SDS065J016H3-ISATH SDS065J016H3-ISATH Sanan Power Semiconductor SDS065J016H3-ISATH.pdf Description: DIODE SIL CARB 650V 44A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.48 EUR
30+4.49 EUR
120+4.14 EUR
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SDS065J020D3-ISARH SDS065J020D3-ISARH Sanan Power Semiconductor SDS065J020D3-ISARH.pdf Description: DIODE SIL CARB 650V 51A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J020D3-ISARH SDS065J020D3-ISARH Sanan Power Semiconductor SDS065J020D3-ISARH.pdf Description: DIODE SIL CARB 650V 51A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.3 EUR
10+5.23 EUR
100+3.74 EUR
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SDS065J020G3-ISATH SDS065J020G3-ISATH Sanan Power Semiconductor SDS065J020G3-ISATH.pdf Description: DIODE ARR SIC 650V 30A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.49 EUR
30+5.95 EUR
120+4.95 EUR
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SDS065J020H3-ISATH SDS065J020H3-ISATH Sanan Power Semiconductor SDS065J020H3-ISATH.pdf Description: DIODE SIL CARB 650V 51A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.16 EUR
30+5.74 EUR
120+4.77 EUR
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SDS065J050H3-ISATH SDS065J050H3-ISATH Sanan Power Semiconductor SDS065J050H3-ISATH.pdf Description: DIODE SIL CARB 650V 114A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2970pF @ 0V, 1MHz
Current - Average Rectified (Io): 114A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.8 EUR
30+11.83 EUR
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ADS12B3-ASARH ADS12B3-ASARH.pdf
ADS12B3-ASARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.51 EUR
Mindestbestellmenge: 5000
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ADS12B3-ASARH ADS12B3-ASARH.pdf
ADS12B3-ASARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 1200V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 6248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
16+1.1 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 11
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SDS065J002D3-ISARH SananSemiconductorSDS065J002D3Datasheet.pdf
SDS065J002D3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 9A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J002D3-ISARH SananSemiconductorSDS065J002D3Datasheet.pdf
SDS065J002D3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 9A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
14+1.34 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 10
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SDS065J004C3-ISATH SananSemiconductorSDS065J004C3Datasheet.pdf
SDS065J004C3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 14A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
50+1.17 EUR
100+1.09 EUR
Mindestbestellmenge: 7
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SDS065J006C3-ISATH SananSemiconductorSDS065J006C3Datasheet.pdf
SDS065J006C3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 20A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
50+2.29 EUR
100+2.06 EUR
Mindestbestellmenge: 4
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SDS065J006E3-ISARH SananSemiconductorSDS065J006E3Datasheet.pdf
SDS065J006E3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 20A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J006E3-ISARH SananSemiconductorSDS065J006E3Datasheet.pdf
SDS065J006E3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 20A TO2632L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.6 EUR
100+1.79 EUR
Mindestbestellmenge: 5
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SDS065J006S3-ISBRH SananSemiconductorSDS065J006S3Datasheet.pdf
SDS065J006S3-ISBRH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 650V 23A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J006S3-ISBRH SananSemiconductorSDS065J006S3Datasheet.pdf
SDS065J006S3-ISBRH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 650V 23A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.85 EUR
100+1.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J008C3-ISATH SananSemiconductorSDS065J008C3Datasheet.pdf
SDS065J008C3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 25A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
50+2.41 EUR
100+1.97 EUR
Mindestbestellmenge: 5
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SDS065J008N3-ISATH SananSemiconductorSDS065J008N3Datasheet.pdf
SDS065J008N3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 20A TO220N2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
50+2.89 EUR
100+2.61 EUR
Mindestbestellmenge: 4
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SDS065J008S3-ISBRH SDS065J008S3-ISBRH.pdf
SDS065J008S3-ISBRH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 650V 29A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.18 EUR
100+2.21 EUR
Mindestbestellmenge: 4
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SDS065J008S3-ISBRH SDS065J008S3-ISBRH.pdf
SDS065J008S3-ISBRH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 650V 29A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J010C3-ISATH SDS065J010C3-ISATH.pdf
SDS065J010C3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 30A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.23 EUR
50+3.14 EUR
100+2.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J010D3-ISARH SDS065J010D3-ISARH.pdf
SDS065J010D3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 29A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.36 EUR
100+2.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J010D3-ISARH SDS065J010D3-ISARH.pdf
SDS065J010D3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 29A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
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SDS065J010E3-ISARH SDS065J010E3-ISARH.pdf
SDS065J010E3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 30A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J010E3-ISARH SDS065J010E3-ISARH.pdf
SDS065J010E3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 30A TO2632L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.35 EUR
10+3.5 EUR
100+2.45 EUR
Mindestbestellmenge: 4
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SDS065J010N3-ISATH SDS065J010N3-ISATH.pdf
SDS065J010N3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 26A TO220N2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-220N-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.62 EUR
50+3.35 EUR
100+3.04 EUR
Mindestbestellmenge: 3
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SDS065J010S3-ISBRH SDS065J010S3-ISBRH.pdf
SDS065J010S3-ISBRH
Hersteller: Sanan Power Semiconductor
Description: DIODE 650V-10A DFN8*8-4L
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
10+3.65 EUR
100+2.55 EUR
Mindestbestellmenge: 4
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SDS065J010S3-ISBRH SDS065J010S3-ISBRH.pdf
SDS065J010S3-ISBRH
Hersteller: Sanan Power Semiconductor
Description: DIODE 650V-10A DFN8*8-4L
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Current - Average Rectified (Io): 10A
Supplier Device Package: 4-DFN (8x8)
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J012S3-ISARH SDS065J012S3-ISARH.pdf
SDS065J012S3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 650V 44A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J012S3-ISARH SDS065J012S3-ISARH.pdf
SDS065J012S3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARBIDE 650V 44A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 651pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 36 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
10+4.13 EUR
100+2.91 EUR
Mindestbestellmenge: 3
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SDS065J016C3-ISATH SDS065J016C3-ISATH.pdf
SDS065J016C3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 44A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.74 EUR
50+2.69 EUR
100+2.63 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J016G3-ISATH SDS065J016G3-ISATH.pdf
SDS065J016G3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE ARR SIC 650V 25A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
30+4.39 EUR
120+4.04 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J016H3-ISATH SDS065J016H3-ISATH.pdf
SDS065J016H3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 44A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.48 EUR
30+4.49 EUR
120+4.14 EUR
Mindestbestellmenge: 3
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SDS065J020D3-ISARH SDS065J020D3-ISARH.pdf
SDS065J020D3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 51A TO2522L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020D3-ISARH SDS065J020D3-ISARH.pdf
SDS065J020D3-ISARH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 51A TO2522L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.3 EUR
10+5.23 EUR
100+3.74 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020G3-ISATH SDS065J020G3-ISATH.pdf
SDS065J020G3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE ARR SIC 650V 30A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.49 EUR
30+5.95 EUR
120+4.95 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J020H3-ISATH SDS065J020H3-ISATH.pdf
SDS065J020H3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 51A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.16 EUR
30+5.74 EUR
120+4.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SDS065J050H3-ISATH SDS065J050H3-ISATH.pdf
SDS065J050H3-ISATH
Hersteller: Sanan Power Semiconductor
Description: DIODE SIL CARB 650V 114A TO2472L
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2970pF @ 0V, 1MHz
Current - Average Rectified (Io): 114A
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 50 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.8 EUR
30+11.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH