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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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AIGBG15N120S7ATMA1 | Infineon Technologies |
 Description: AIGBG15N120S7ATMA1Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: PG-TO263-7-12 IGBT Type: Trench Field Stop Gate Charge: 93 nC Grade: Automotive Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 176 W Qualification: AEC-Q101 |
auf Bestellung 994 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGBG15N120S7ATMA1 | Infineon Technologies |
IGBTs Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology |
auf Bestellung 426 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIKWH15N120CS7XKSA1 | Infineon Technologies |
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKWH15N120CS7XKSA1 | Infineon Technologies |
IGBTs 1200 V TRENCHSTOP IGBT 7 technology |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKZH15N120CS7XKSA1 | Infineon Technologies |
IGBTs 1200 V TRENCHSTOP IGBT 7 technology |
auf Bestellung 715 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKZH15N120CS7XKSA1 | Infineon Technologies |
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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HGT1S15N120C3 | Harris Corporation |
Description: IGBT 1200V 35A TO-262 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A Supplier Device Package: TO-262 (I2PAK) Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 164 W |
auf Bestellung 3604 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGT1S15N120C3S | Harris Corporation |
Description: IGBT 1200V 35A TO-263AB Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A Supplier Device Package: TO-263AB Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 164 W |
auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG15N120C3 | Harris Corporation |
Description: IGBT 1200V 35A TO-247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A Supplier Device Package: TO-247 Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 164 W |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB15N120S7ATMA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 169 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB15N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 34A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16ns/156ns Switching Energy: 900µJ (on), 680µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 97 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 141 W |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW15N120H3 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW15N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 217W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 Technology: TRENCHSTOP™ 3 |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW15N120H3FKSA1 | Infineon |
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Odpowiednik: IGW15N120H3; IGW15N120H3FKSA1 TIGW15n120h3 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW15N120H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/260ns Switching Energy: 1.55mJ Test Condition: 600V, 15A, 35Ohm, 15V Gate Charge: 75 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 217 W |
auf Bestellung 289 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW15N120E1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 62.2W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 90nC Kind of package: tube Turn-on time: 1940ns Turn-off time: 1450ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW15N120E1XKSA1 | Infineon Technologies |
Description: IGBT NPT/TRENCH 1200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: PG-TO247-3 IGBT Type: NPT and Trench Switching Energy: 300µJ (off) Gate Charge: 90 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 156 W |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW15N120E1XKSA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 716 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW15N120R3 | Infineon |
Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1 IHW15N120R3 TIHW15n120r3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW15N120R3 | Infineon Technologies |
IGBTs IH SeriesRev Conduct IGBT Monolithic Bod |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW15N120R3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 127W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-off time: 346ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW15N120R3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1200V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: -/300ns Switching Energy: 700µJ (off) Test Condition: 600V, 15A, 14.6Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 254 W |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW15N120R3FKSA1 | Infineon Technologies |
IGBTs IH SeriesRev Conduct IGBT Monolithic Bod |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW15N120BH6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 92nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 6 |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW15N120BH6XKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 2083 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW15N120CS7XKSA1 | Infineon Technologies |
IGBTs 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package |
auf Bestellung 479 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW15N120CS7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 36A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 135 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 750µJ (on), 700µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 176 W |
auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW15N120H3 | Infineon |
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IKW15N120H3FKSA1 | Infineon |
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW15N120T2 | Infineon |
IGBT Trench 1200V 30A 235W IKW15N120T2FKSA1 IKW15N120T2 TIKW15n120t2 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW15N120T2 | Infineon Technologies |
IGBTs LOW LOSS DuoPack 1200V 15A |
auf Bestellung 118 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW15N120T2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 235W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 93nC Kind of package: tube Turn-on time: 57ns Turn-off time: 457ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 2 |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IRG8P15N120KD-EPBF | International Rectifier |
Description: IGBT 1200V 30A TO-247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/170ns Switching Energy: 600µJ (on), 600µJ (off) Test Condition: 600V, 10A, 10Ohm, 15V Gate Charge: 98 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 30 A Power - Max: 125 W |
auf Bestellung 8125 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG8P15N120KDPBF | International Rectifier |
Description: IGBT 1200V 30A TO-247AC Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 15ns/170ns Switching Energy: 600µJ (on), 600µJ (off) Test Condition: 600V, 10A, 10Ohm, 15V Gate Charge: 98 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 30 A Power - Max: 125 W |
auf Bestellung 6484 Stücke: Lieferzeit 10-14 Tag (e) |
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JNG15N120AI | JIAENSEMI |
Transistor IGBT ; 1200V; 20V; 30A; 45A; 175W; 4V~6V; 70nC; -55°C~150°C; JNG15N120AI JIAENSEMI TJNG15n120ai Anzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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JNG15N120HS2 | JIAENSEMI |
Transistor IGBT ; 1200V; 20V; 30A; 45A; 180W; 4V~6V; 70nC; -55°C~150°C; JNG15N120HS2 JIAENSEMI TJNG15n120hs2 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 40W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 50ns Turn-off time: 245ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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NGTB15N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 147W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 109nC Kind of package: tube |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| NGTB15N120FL2WG | onsemi |
IGBTs 1200V/15A VERY FAST IGBT |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB15N120FL2WG | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 64ns/132ns Switching Energy: 1.2mJ (on), 370µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 109 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 294 W |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB15N120FLWG | onsemi |
Description: IGBT 1200V 15A TO247-3 Packaging: Bulk Part Status: Obsolete |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB15N120LWG | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 72ns/165ns Switching Energy: 2.1mJ (on), 560µJ (off) Test Condition: 600V, 15A, 15Ohm, 15V Gate Charge: 160 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 229 W |
auf Bestellung 4987 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTB15N120LWG | onsemi |
IGBTs 1200V/15A IGBT LPT TO-247 |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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RF15N120F500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12pF , +/-1% 50V T&R RF |
auf Bestellung 29467 Stücke: Lieferzeit 10-14 Tag (e) |
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RF15N120G500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12pF , +/-2% 50V T&R RF |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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RF15N120J100CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 12pF 5% 10V |
auf Bestellung 10117 Stücke: Lieferzeit 10-14 Tag (e) |
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RF15N120J500CT | Walsin |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 12pF, +-5%, 50V |
auf Bestellung 28422 Stücke: Lieferzeit 10-14 Tag (e) |
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SGH15N120RUFDTU | Fairchild Semiconductor |
Description: IGBT 1200V 24A TO-3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 20ns/60ns Test Condition: 600V, 15A, 20Ohm, 15V Gate Charge: 108 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 180 W |
auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) |
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SGH15N120RUFTU | Fairchild Semiconductor |
Description: IGBT 1200V 24A TO-3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 20ns/60ns Test Condition: 600V, 15A, 20Ohm, 15V Gate Charge: 108 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 180 W |
auf Bestellung 2889 Stücke: Lieferzeit 10-14 Tag (e) |
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SGP15N120XKSA1 | Infineon |
IGBT 1200V 30A 198W TO220-3 Транзистори |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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TRS15N120HB,S1Q | Toshiba |
SiC Schottky Diodes RECT 1.2KV 25A RDL SIC SKY |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS15N120HB,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 1200V 25A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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| TW015N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 15MO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 5V @ 11.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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TW015N120C,S1F | Toshiba | SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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| YGW15N120TMA1 | LUXIN-SEMI |
Transistor IGBT ; 1200V; 20V; 45A; 45A; 197W; 4,5V~6,1V; 89nC; -40°C~175°C; YGW15N120TMA1 LUXIN-SEMI TYGW15n120tma1 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| 6MBI15N-120 | FUJI | MODULE |
auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGA15N120 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGA15N120ANDTU | FAIRCHILD |
09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FGA15N120ANFD |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGA15N120ANTD |
auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AIGBG15N120S7ATMA1 |
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Hersteller: Infineon Technologies
Description: AIGBG15N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Gate Charge: 93 nC
Grade: Automotive
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Qualification: AEC-Q101
Description: AIGBG15N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Gate Charge: 93 nC
Grade: Automotive
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Qualification: AEC-Q101
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 4.75 EUR |
| 100+ | 3.32 EUR |
| 500+ | 2.76 EUR |
| AIGBG15N120S7ATMA1 |
|
Hersteller: Infineon Technologies
IGBTs Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
IGBTs Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.47 EUR |
| 10+ | 4.9 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.68 EUR |
| 2000+ | 2.67 EUR |
| AIKWH15N120CS7XKSA1 |
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auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.4 EUR |
| 10+ | 6.39 EUR |
| 25+ | 5.89 EUR |
| 240+ | 5.08 EUR |
| 480+ | 4.91 EUR |
| 720+ | 4.83 EUR |
| AIKWH15N120CS7XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 1200 V TRENCHSTOP IGBT 7 technology
IGBTs 1200 V TRENCHSTOP IGBT 7 technology
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.51 EUR |
| 10+ | 8.35 EUR |
| 100+ | 6.72 EUR |
| 480+ | 5.97 EUR |
| 1200+ | 4.8 EUR |
| AIKZH15N120CS7XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 1200 V TRENCHSTOP IGBT 7 technology
IGBTs 1200 V TRENCHSTOP IGBT 7 technology
auf Bestellung 715 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.9 EUR |
| 10+ | 8.63 EUR |
| 100+ | 6.94 EUR |
| 480+ | 6.15 EUR |
| 1200+ | 4.96 EUR |
| AIKZH15N120CS7XKSA1 |
|
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.47 EUR |
| 10+ | 7.22 EUR |
| 30+ | 6.57 EUR |
| 120+ | 5.99 EUR |
| 270+ | 5.74 EUR |
| 510+ | 5.57 EUR |
| HGT1S15N120C3 |
|
Hersteller: Harris Corporation
Description: IGBT 1200V 35A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
Description: IGBT 1200V 35A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 3604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 8.37 EUR |
| HGT1S15N120C3S |
|
Hersteller: Harris Corporation
Description: IGBT 1200V 35A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
Description: IGBT 1200V 35A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 8.37 EUR |
| HGTG15N120C3 |
|
Hersteller: Harris Corporation
Description: IGBT 1200V 35A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-247
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
Description: IGBT 1200V 35A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-247
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 164 W
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 9 EUR |
| IGB15N120S7ATMA1 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.83 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.26 EUR |
| IGB15N120S7ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.66 EUR |
| 10+ | 4.34 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.46 EUR |
| IGW15N120H3 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.54 EUR |
| 10+ | 4.94 EUR |
| 100+ | 3.97 EUR |
| 480+ | 3.31 EUR |
| 1200+ | 2.93 EUR |
| 5040+ | 2.83 EUR |
| IGW15N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.26 EUR |
| 25+ | 3.44 EUR |
| 28+ | 3.13 EUR |
| 30+ | 2.86 EUR |
| IGW15N120H3FKSA1 |
|
Hersteller: Infineon
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Odpowiednik: IGW15N120H3; IGW15N120H3FKSA1 TIGW15n120h3
Anzahl je Verpackung: 2 Stücke
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Odpowiednik: IGW15N120H3; IGW15N120H3FKSA1 TIGW15n120h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 11.19 EUR |
| IGW15N120H3FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
Description: IGBT TRENCH FS 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/260ns
Switching Energy: 1.55mJ
Test Condition: 600V, 15A, 35Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 217 W
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.81 EUR |
| 30+ | 4.3 EUR |
| 120+ | 3.51 EUR |
| IHW15N120E1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 62.2W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 1940ns
Turn-off time: 1450ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 62.2W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 1940ns
Turn-off time: 1450ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.28 EUR |
| 37+ | 2.33 EUR |
| 41+ | 2.09 EUR |
| IHW15N120E1XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT NPT/TRENCH 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 300µJ (off)
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 156 W
Description: IGBT NPT/TRENCH 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 300µJ (off)
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 156 W
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 30+ | 3.14 EUR |
| IHW15N120E1XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.71 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.83 EUR |
| 480+ | 2.31 EUR |
| 2640+ | 2.15 EUR |
| 5040+ | 1.96 EUR |
| IHW15N120R3 |
|
Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1 IHW15N120R3 TIHW15n120r3
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1 IHW15N120R3 TIHW15n120r3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 6.95 EUR |
| IHW15N120R3 |
|
Hersteller: Infineon Technologies
IGBTs IH SeriesRev Conduct IGBT Monolithic Bod
IGBTs IH SeriesRev Conduct IGBT Monolithic Bod
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.68 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.06 EUR |
| 480+ | 2.53 EUR |
| 1200+ | 2.37 EUR |
| 2640+ | 2.23 EUR |
| IHW15N120R3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 127W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-off time: 346ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 127W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-off time: 346ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.68 EUR |
| 25+ | 3.45 EUR |
| 30+ | 2.88 EUR |
| 120+ | 2.65 EUR |
| IHW15N120R3FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/300ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 15A, 14.6Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 254 W
Description: IGBT TRENCH 1200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/300ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 15A, 14.6Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 254 W
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.56 EUR |
| IHW15N120R3FKSA1 |
|
Hersteller: Infineon Technologies
IGBTs IH SeriesRev Conduct IGBT Monolithic Bod
IGBTs IH SeriesRev Conduct IGBT Monolithic Bod
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.43 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.87 EUR |
| 480+ | 2.68 EUR |
| 1200+ | 2.59 EUR |
| 2640+ | 2.51 EUR |
| 5040+ | 2.31 EUR |
| IKW15N120BH6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 6
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 6
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.4 EUR |
| 23+ | 3.84 EUR |
| 30+ | 2.93 EUR |
| 33+ | 2.64 EUR |
| 35+ | 2.46 EUR |
| IKW15N120BH6XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 2083 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.66 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.03 EUR |
| 480+ | 2.53 EUR |
| 1200+ | 2.34 EUR |
| 2640+ | 2.23 EUR |
| IKW15N120CS7XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package
IGBTs 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package
auf Bestellung 479 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.58 EUR |
| 10+ | 6.31 EUR |
| 100+ | 5.13 EUR |
| 480+ | 4.3 EUR |
| 1200+ | 4.08 EUR |
| IKW15N120CS7XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.22 EUR |
| 30+ | 5.75 EUR |
| 120+ | 4.76 EUR |
| IKW15N120H3 |
|
Hersteller: Infineon
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3
Anzahl je Verpackung: 5 Stücke
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 13.39 EUR |
| IKW15N120H3FKSA1 |
|
Hersteller: Infineon
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3
Anzahl je Verpackung: 5 Stücke
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3; IKW15N120H3FKSA1 TIKW15n120h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 13.39 EUR |
| IKW15N120T2 |
|
Hersteller: Infineon
IGBT Trench 1200V 30A 235W IKW15N120T2FKSA1 IKW15N120T2 TIKW15n120t2
Anzahl je Verpackung: 2 Stücke
IGBT Trench 1200V 30A 235W IKW15N120T2FKSA1 IKW15N120T2 TIKW15n120t2
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 13.85 EUR |
| IKW15N120T2 |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 1200V 15A
IGBTs LOW LOSS DuoPack 1200V 15A
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.97 EUR |
| 10+ | 7.19 EUR |
| 100+ | 5.28 EUR |
| 480+ | 4.69 EUR |
| 1200+ | 4.16 EUR |
| IKW15N120T2FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 235W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 457ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 2
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 235W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 457ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 2
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.05 EUR |
| 17+ | 5.12 EUR |
| IRG8P15N120KD-EPBF |
|
Hersteller: International Rectifier
Description: IGBT 1200V 30A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
Description: IGBT 1200V 30A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
auf Bestellung 8125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 7.03 EUR |
| IRG8P15N120KDPBF |
|
Hersteller: International Rectifier
Description: IGBT 1200V 30A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
Description: IGBT 1200V 30A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
auf Bestellung 6484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 94+ | 5.85 EUR |
| JNG15N120AI |
|
Hersteller: JIAENSEMI
Transistor IGBT ; 1200V; 20V; 30A; 45A; 175W; 4V~6V; 70nC; -55°C~150°C; JNG15N120AI JIAENSEMI TJNG15n120ai
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 30A; 45A; 175W; 4V~6V; 70nC; -55°C~150°C; JNG15N120AI JIAENSEMI TJNG15n120ai
Anzahl je Verpackung: 5 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 5.3 EUR |
| JNG15N120HS2 |
|
Hersteller: JIAENSEMI
Transistor IGBT ; 1200V; 20V; 30A; 45A; 180W; 4V~6V; 70nC; -55°C~150°C; JNG15N120HS2 JIAENSEMI TJNG15n120hs2
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 30A; 45A; 180W; 4V~6V; 70nC; -55°C~150°C; JNG15N120HS2 JIAENSEMI TJNG15n120hs2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 4.94 EUR |
| LGEGW15N120TS |
|
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 245ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 245ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.89 EUR |
| 33+ | 2.61 EUR |
| 37+ | 2.31 EUR |
| 40+ | 2.14 EUR |
| 120+ | 2.01 EUR |
| 240+ | 1.95 EUR |
| NGTB15N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.85 EUR |
| 15+ | 5.74 EUR |
| NGTB15N120FL2WG |
|
Hersteller: onsemi
IGBTs 1200V/15A VERY FAST IGBT
IGBTs 1200V/15A VERY FAST IGBT
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.88 EUR |
| 10+ | 7.41 EUR |
| NGTB15N120FL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/132ns
Switching Energy: 1.2mJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 294 W
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/132ns
Switching Energy: 1.2mJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 294 W
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.14 EUR |
| NGTB15N120FLWG |
|
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 118+ | 4.66 EUR |
| NGTB15N120LWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 72ns/165ns
Switching Energy: 2.1mJ (on), 560µJ (off)
Test Condition: 600V, 15A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 229 W
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 72ns/165ns
Switching Energy: 2.1mJ (on), 560µJ (off)
Test Condition: 600V, 15A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 229 W
auf Bestellung 4987 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 3.24 EUR |
| NGTB15N120LWG |
|
Hersteller: onsemi
IGBTs 1200V/15A IGBT LPT TO-247
IGBTs 1200V/15A IGBT LPT TO-247
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.85 EUR |
| 10+ | 5.15 EUR |
| 120+ | 3.81 EUR |
| 510+ | 3.2 EUR |
| 1020+ | 2.98 EUR |
| 2520+ | 2.78 EUR |
| RF15N120F500CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12pF , +/-1% 50V T&R RF
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12pF , +/-1% 50V T&R RF
auf Bestellung 29467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 0.27 EUR |
| 31+ | 0.11 EUR |
| 100+ | 0.063 EUR |
| 500+ | 0.05 EUR |
| 1000+ | 0.039 EUR |
| 2500+ | 0.036 EUR |
| 5000+ | 0.033 EUR |
| RF15N120G500CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12pF , +/-2% 50V T&R RF
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 12pF , +/-2% 50V T&R RF
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.48 EUR |
| 20+ | 0.17 EUR |
| 100+ | 0.094 EUR |
| 500+ | 0.061 EUR |
| 1000+ | 0.046 EUR |
| 2500+ | 0.03 EUR |
| 5000+ | 0.025 EUR |
| RF15N120J100CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 12pF 5% 10V
Multilayer Ceramic Capacitors MLCC - SMD/SMT 12pF 5% 10V
auf Bestellung 10117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.32 EUR |
| 30+ | 0.12 EUR |
| 100+ | 0.063 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.031 EUR |
| 2500+ | 0.021 EUR |
| 5000+ | 0.019 EUR |
| RF15N120J500CT |
|
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 12pF, +-5%, 50V
Multilayer Ceramic Capacitors MLCC - SMD/SMT 12pF, +-5%, 50V
auf Bestellung 28422 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.32 EUR |
| 30+ | 0.12 EUR |
| 100+ | 0.063 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.031 EUR |
| 2500+ | 0.021 EUR |
| 5000+ | 0.019 EUR |
| SGH15N120RUFDTU |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 1200V 24A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 108 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Description: IGBT 1200V 24A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 108 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 6.52 EUR |
| SGH15N120RUFTU |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 1200V 24A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 108 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Description: IGBT 1200V 24A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 108 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
auf Bestellung 2889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 8.28 EUR |
| SGP15N120XKSA1 |
|
Hersteller: Infineon
IGBT 1200V 30A 198W TO220-3 Транзистори
IGBT 1200V 30A 198W TO220-3 Транзистори
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.7 EUR |
| TRS15N120HB,S1Q |
|
Hersteller: Toshiba
SiC Schottky Diodes RECT 1.2KV 25A RDL SIC SKY
SiC Schottky Diodes RECT 1.2KV 25A RDL SIC SKY
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.74 EUR |
| 10+ | 13.72 EUR |
| 120+ | 11.25 EUR |
| 510+ | 10.64 EUR |
| TRS15N120HB,S1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Description: DIODE ARRAY SIC 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.55 EUR |
| 30+ | 10.28 EUR |
| TW015N120C,S1F |
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 71 EUR |
| 30+ | 47 EUR |
| TW015N120C,S1F |
Hersteller: Toshiba
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.92 EUR |
| 10+ | 30.68 EUR |
| 120+ | 27.92 EUR |
| YGW15N120TMA1 |
Hersteller: LUXIN-SEMI
Transistor IGBT ; 1200V; 20V; 45A; 45A; 197W; 4,5V~6,1V; 89nC; -40°C~175°C; YGW15N120TMA1 LUXIN-SEMI TYGW15n120tma1
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 45A; 45A; 197W; 4,5V~6,1V; 89nC; -40°C~175°C; YGW15N120TMA1 LUXIN-SEMI TYGW15n120tma1
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 5.06 EUR |
| 6MBI15N-120 |
Hersteller: FUJI
MODULE
MODULE
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
| FGA15N120ANDTU |
|
Hersteller: FAIRCHILD
09+
09+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| FGA15N120ANFD |
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
| FGA15N120ANTD |
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
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