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IRFS9N60A IRFS9N60A
Produktcode: 77974
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Vishay irfs9n60a_datasheet.pdf Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263)
Uds,V: 600
Idd,A: 05.08.2015
Rds(on), Ohm: 0.75
Ciss, pF/Qg, nC: 1400/49
JHGF: SMD
verfügbar: 4 Stück
1+0.7 EUR
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 11030 Stücke:
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3+8.62 EUR
10+6.21 EUR
100+4.48 EUR
500+4.45 EUR
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FCMT199N60 FCMT199N60 onsemi / Fairchild FCMT199N60-D.pdf MOSFETs 199mohm 600V SuperFET2
auf Bestellung 4900 Stücke:
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1+8.48 EUR
10+6.11 EUR
100+4.49 EUR
500+4.47 EUR
1000+4.24 EUR
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FCMT199N60 FCMT199N60 onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 9000 Stücke:
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FCMT299N60 FCMT299N60 onsemi fcmt299n60-d.pdf Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 2386 Stücke:
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FCMT299N60 FCMT299N60 onsemi fcmt299n60-d.pdf Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 2313 Stücke:
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FCMT299N60 FCMT299N60 onsemi / Fairchild FCMT299N60-D.pdf MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 222 Stücke:
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1+7.16 EUR
10+5.19 EUR
100+3.73 EUR
500+3.59 EUR
1000+3.48 EUR
3000+3.04 EUR
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FCP099N60E FCP099N60E onsemi fcp099n60e-d.pdf Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V
auf Bestellung 243 Stücke:
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3+8.25 EUR
50+5 EUR
100+4.91 EUR
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FCP9N60N FCP9N60N Fairchild Semiconductor FAIRS46032-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 33480 Stücke:
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FCPF9N60NT FCPF9N60NT Fairchild Semiconductor FAIRS46032-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1700 Stücke:
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FQAF19N60 FQAF19N60 Fairchild Semiconductor FAIRS07068-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 681 Stücke:
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IRFB9N60APBF IRFB9N60APBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A6CEDAB5E0469&compId=IRFB9N60APBF.pdf?ci_sign=82f44d4d943ac0e0c629cc76acf8996fc666f9d4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
auf Bestellung 891 Stücke:
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IRFB9N60APBF IRFB9N60APBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A6CEDAB5E0469&compId=IRFB9N60APBF.pdf?ci_sign=82f44d4d943ac0e0c629cc76acf8996fc666f9d4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 891 Stücke:
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44+1.66 EUR
46+1.57 EUR
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IRFB9N60APBF IRFB9N60APBF Vishay Semiconductors 91103.pdf MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 1240 Stücke:
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10+1.9 EUR
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IRFB9N60APBF IRFB9N60APBF Vishay Siliconix 91103.pdf Description: MOSFET N-CH 600V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1343 Stücke:
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6+3.13 EUR
50+1.99 EUR
1000+1.97 EUR
Mindestbestellmenge: 6
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IRFB9N60APBF-BE3 IRFB9N60APBF-BE3 Vishay / Siliconix 91103.pdf MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 834 Stücke:
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1+5.47 EUR
10+2.32 EUR
100+2.11 EUR
500+1.97 EUR
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IRFS9N60APBF IRFS9N60APBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC446ED373AE143&compId=IRFS9N60A.pdf?ci_sign=6ddd17bd5623756d55d42b1e84b8128deadad4a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
37+1.96 EUR
39+1.84 EUR
100+1.77 EUR
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IRFS9N60APBF IRFS9N60APBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC446ED373AE143&compId=IRFS9N60A.pdf?ci_sign=6ddd17bd5623756d55d42b1e84b8128deadad4a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
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31+2.33 EUR
37+1.96 EUR
39+1.84 EUR
100+1.77 EUR
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IRFS9N60APBF IRFS9N60APBF Vishay Semiconductors sihs9n60.pdf MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 1364 Stücke:
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1+3.04 EUR
10+2.24 EUR
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IRFS9N60APBF IRFS9N60APBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 75 Stücke:
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6+3.19 EUR
50+2.45 EUR
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IRFS9N60ATRLPBF IRFS9N60ATRLPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 920 Stücke:
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4+5.49 EUR
10+4.13 EUR
100+3.19 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Semiconductors sihs9n60.pdf MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.16 EUR
10+4.54 EUR
100+3.26 EUR
500+2.62 EUR
2400+2.57 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.14 EUR
10+4.56 EUR
100+3.23 EUR
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IRFS9N60ATRRPBF IRFS9N60ATRRPBF Vishay Siliconix sihs9n60.pdf Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.49 EUR
Mindestbestellmenge: 800
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IRFSL9N60APBF IRFSL9N60APBF Vishay Siliconix sihsl9n6.pdf Description: MOSFET N-CH 600V 9.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.79 EUR
50+2.95 EUR
100+2.67 EUR
500+2.18 EUR
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MCW099N60SH-BP MCW099N60SH-BP MCC (Micro Commercial Components) MCW099N60SH(TO-247).pdf Description: N-CHANNEL MOSFET,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 15.3A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2224 pF @ 100 V
auf Bestellung 360 Stücke:
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MCW099N60SH-BP MCW099N60SH-BP Micro Commercial Components (MCC) MCW099N60SH_TO_247_.pdf MOSFETs N-CHANNEL MOSFET,TO-247
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NTHL019N60S5F NTHL019N60S5F onsemi nthl019n60s5f-d.pdf Description: SUPERFET5 FRFET, 19MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A,10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 15.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 400 V
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NTHL019N60S5F NTHL019N60S5F onsemi NTHL019N60S5F-D.PDF MOSFETs Power MOSFET, N-Channel, SUPERFET V, FRFET, 600 V, 75 A, 19 mohm, TO-247
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NTHL099N60S5 NTHL099N60S5 onsemi NTHL099N60S5-D.PDF MOSFETs Power MOSFET, N-Channel, SUPERFET V, Easy Drive, 600 V, 33 A, 99 mohm, TO-247
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NTHL099N60S5 NTHL099N60S5 onsemi nthl099n60s5-d.pdf Description: NTHL099N60S5
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V
auf Bestellung 207 Stücke:
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PJMF099N60EC_T0_00601 PJMF099N60EC_T0_00601 Panjit International Inc. PJMF099N60EC.pdf Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 1973 Stücke:
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PJMF099N60EC_T0_00601 PJMF099N60EC_T0_00601 Panjit PJMF099N60EC.pdf MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1990 Stücke:
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PJMH099N60EC_T0_00601 PJMH099N60EC_T0_00601 Panjit International Inc. PJMH099N60EC.pdf Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
auf Bestellung 1500 Stücke:
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PJMH099N60EC_T0_00601 PJMH099N60EC_T0_00601 Panjit C7DA8B48387405CDB30D1C21C6DE548F3F4E86D76DDE487A7CEA756F9D630321.pdf MOSFETs 600V/ 99mohms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 840 Stücke:
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PJMP099N60EC_T0_00601 PJMP099N60EC_T0_00601 Panjit International Inc. PJMP099N60EC.pdf Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
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PJMP099N60EC_T0_00601 PJMP099N60EC_T0_00601 Panjit PJMP099N60EC.pdf MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1997 Stücke:
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1+11.35 EUR
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SIHD9N60E-GE3 SIHD9N60E-GE3 Vishay Semiconductors sihd9n60e.pdf MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2685 Stücke:
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SIHFS9N60A-GE3 SIHFS9N60A-GE3 Vishay / Siliconix sihs9n60.pdf MOSFETs 600V Vds TO-263 D2PAK
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SIHG039N60E-GE3 SIHG039N60E-GE3 Vishay Semiconductors sihg039n60e.pdf MOSFETs 650V Vds; 30V Vgs TO-247AC
auf Bestellung 1470 Stücke:
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SIHG039N60E-GE3 SIHG039N60E-GE3 Vishay Siliconix sihg039n60e.pdf Description: MOSFET N-CH 600V 63A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V
auf Bestellung 494 Stücke:
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2+17.16 EUR
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SIHG039N60EF-GE3 SIHG039N60EF-GE3 Vishay / Siliconix tf-sihg039n60ef-ge3.pdf MOSFETs TO247 600V 61A N-CH MOSFET
auf Bestellung 226 Stücke:
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SIHG039N60EF-GE3 SIHG039N60EF-GE3 Vishay Siliconix tf-sihg039n60ef-ge3.pdf Description: MOSFET N-CH 600V 61A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
auf Bestellung 435 Stücke:
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2+13.39 EUR
10+12 EUR
100+10.01 EUR
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3636 Stücke:
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500+0.86 EUR
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 2616 Stücke:
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2+2.13 EUR
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STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+0.7 EUR
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STF9N60M2 STF9N60M2 STMicroelectronics en.DM00086741.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 720mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
auf Bestellung 140 Stücke:
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STF9N60M2 STF9N60M2 STMicroelectronics en.DM00086741.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 720mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
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STF9N60M2 STF9N60M2 STMicroelectronics en.DM00086741.pdf MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 1836 Stücke:
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2+2.38 EUR
10+1.83 EUR
100+1.29 EUR
500+1.02 EUR
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STF9N60M2 STF9N60M2 STMicroelectronics en.DM00086741.pdf Description: MOSFET N-CH 600V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1958 Stücke:
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8+2.38 EUR
10+1.82 EUR
100+1.28 EUR
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STL19N60M6 STL19N60M6 STMicroelectronics en.DM00671637.pdf Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 2997 Stücke:
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3+6.11 EUR
10+4 EUR
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500+2.53 EUR
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STL9N60M2 STL9N60M2 STMicroelectronics en.DM00102384.pdf Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1066 Stücke:
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5+3.52 EUR
10+2.26 EUR
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500+1.23 EUR
1000+1.2 EUR
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STP9N60M2 STMicroelectronics en.DM00080324.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: 25V
On-state resistance: 780mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.04 EUR
Mindestbestellmenge: 100
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STU9N60M2 STU9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
75+1.06 EUR
150+0.96 EUR
525+0.91 EUR
1050+0.81 EUR
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STU9N60M2 STU9N60M2 STMicroelectronics en.DM00080324.pdf MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.75 EUR
10+1.06 EUR
100+0.97 EUR
500+0.91 EUR
1000+0.8 EUR
3000+0.75 EUR
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TK099N60Z1,S1F TK099N60Z1,S1F Toshiba Semiconductor and Storage TK099N60Z1_datasheet_en_20240826.pdf?did=159763&prodName=TK099N60Z1 Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.85 EUR
30+4.42 EUR
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TK099N60Z1,S1F TK099N60Z1,S1F Toshiba TK099N60Z1_datasheet_en_20240826.pdf?did=159763&prodName=TK099N60Z1 MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TO-247, DTMOS?
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.48 EUR
10+5.47 EUR
120+3.66 EUR
510+3.15 EUR
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TK39N60W,S1VF TK39N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13613&prodName=TK39N60W Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 28 Stücke:
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TK39N60W,S1VF TK39N60W,S1VF Toshiba 01521AA250BCA9EB1061DC14932768AA0738ACD74EF0F0BF758B62E13F31E519.pdf MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
auf Bestellung 50 Stücke:
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1+10.6 EUR
10+6.25 EUR
120+5.24 EUR
510+4.86 EUR
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TK39N60W5,S1VF TK39N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=14536&prodName=TK39N60W5 Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
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120+6.04 EUR
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IRFS9N60A
Produktcode: 77974
zu Favoriten hinzufügen Lieblingsprodukt

irfs9n60a_datasheet.pdf
IRFS9N60A
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263)
Uds,V: 600
Idd,A: 05.08.2015
Rds(on), Ohm: 0.75
Ciss, pF/Qg, nC: 1400/49
JHGF: SMD
verfügbar: 4 Stück
Anzahl Preis
1+0.7 EUR
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 11030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.62 EUR
10+6.21 EUR
100+4.48 EUR
500+4.45 EUR
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FCMT199N60 FCMT199N60-D.pdf
FCMT199N60
Hersteller: onsemi / Fairchild
MOSFETs 199mohm 600V SuperFET2
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.48 EUR
10+6.11 EUR
100+4.49 EUR
500+4.47 EUR
1000+4.24 EUR
3000+3.8 EUR
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FCMT199N60 fcmt199n60-d.pdf
FCMT199N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.64 EUR
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FCMT299N60 fcmt299n60-d.pdf
FCMT299N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 2386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+5.22 EUR
100+3.73 EUR
500+3.57 EUR
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FCMT299N60 fcmt299n60-d.pdf
FCMT299N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
10+5.22 EUR
100+3.73 EUR
500+3.09 EUR
1000+2.91 EUR
Mindestbestellmenge: 3
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FCMT299N60 FCMT299N60-D.pdf
FCMT299N60
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.16 EUR
10+5.19 EUR
100+3.73 EUR
500+3.59 EUR
1000+3.48 EUR
3000+3.04 EUR
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FCP099N60E fcp099n60e-d.pdf
FCP099N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.25 EUR
50+5 EUR
100+4.91 EUR
Mindestbestellmenge: 3
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FCP9N60N FAIRS46032-1.pdf?t.download=true&u=5oefqw
FCP9N60N
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 9A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 33480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
157+2.88 EUR
Mindestbestellmenge: 157
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FCPF9N60NT FAIRS46032-1.pdf?t.download=true&u=5oefqw
FCPF9N60NT
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
190+2.39 EUR
Mindestbestellmenge: 190
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FQAF19N60 FAIRS07068-1.pdf?t.download=true&u=5oefqw
FQAF19N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 11.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+4.53 EUR
Mindestbestellmenge: 100
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IRFB9N60APBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A6CEDAB5E0469&compId=IRFB9N60APBF.pdf?ci_sign=82f44d4d943ac0e0c629cc76acf8996fc666f9d4
IRFB9N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
44+1.66 EUR
46+1.57 EUR
Mindestbestellmenge: 32
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IRFB9N60APBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A6CEDAB5E0469&compId=IRFB9N60APBF.pdf?ci_sign=82f44d4d943ac0e0c629cc76acf8996fc666f9d4
IRFB9N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 891 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.26 EUR
44+1.66 EUR
46+1.57 EUR
Mindestbestellmenge: 32
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IRFB9N60APBF 91103.pdf
IRFB9N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.85 EUR
10+1.9 EUR
1000+1.88 EUR
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IRFB9N60APBF 91103.pdf
IRFB9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
50+1.99 EUR
1000+1.97 EUR
Mindestbestellmenge: 6
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IRFB9N60APBF-BE3 91103.pdf
IRFB9N60APBF-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 9.2A N-CH MOSFET
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.47 EUR
10+2.32 EUR
100+2.11 EUR
500+1.97 EUR
1000+1.88 EUR
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IRFS9N60APBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC446ED373AE143&compId=IRFS9N60A.pdf?ci_sign=6ddd17bd5623756d55d42b1e84b8128deadad4a7
IRFS9N60APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
37+1.96 EUR
39+1.84 EUR
100+1.77 EUR
Mindestbestellmenge: 31
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IRFS9N60APBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BCC446ED373AE143&compId=IRFS9N60A.pdf?ci_sign=6ddd17bd5623756d55d42b1e84b8128deadad4a7
IRFS9N60APBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.33 EUR
37+1.96 EUR
39+1.84 EUR
100+1.77 EUR
Mindestbestellmenge: 31
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IRFS9N60APBF sihs9n60.pdf
IRFS9N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.04 EUR
10+2.24 EUR
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IRFS9N60APBF sihs9n60.pdf
IRFS9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
50+2.45 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFS9N60ATRLPBF sihs9n60.pdf
IRFS9N60ATRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.49 EUR
10+4.13 EUR
100+3.19 EUR
Mindestbestellmenge: 4
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IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Semiconductors
MOSFETs TO263 600V 9.2A N-CH MOSFET
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.16 EUR
10+4.54 EUR
100+3.26 EUR
500+2.62 EUR
2400+2.57 EUR
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IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+4.56 EUR
100+3.23 EUR
Mindestbestellmenge: 3
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IRFS9N60ATRRPBF sihs9n60.pdf
IRFS9N60ATRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.49 EUR
Mindestbestellmenge: 800
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IRFSL9N60APBF sihsl9n6.pdf
IRFSL9N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
50+2.95 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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MCW099N60SH-BP MCW099N60SH(TO-247).pdf
MCW099N60SH-BP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 15.3A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2224 pF @ 100 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.92 EUR
10+5.27 EUR
360+3.23 EUR
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MCW099N60SH-BP MCW099N60SH_TO_247_.pdf
MCW099N60SH-BP
Hersteller: Micro Commercial Components (MCC)
MOSFETs N-CHANNEL MOSFET,TO-247
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.29 EUR
10+5.21 EUR
100+4.29 EUR
500+3.84 EUR
1000+3.29 EUR
1800+3.27 EUR
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NTHL019N60S5F nthl019n60s5f-d.pdf
NTHL019N60S5F
Hersteller: onsemi
Description: SUPERFET5 FRFET, 19MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A,10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 15.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 400 V
auf Bestellung 29677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.07 EUR
10+19.34 EUR
450+16.22 EUR
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NTHL019N60S5F NTHL019N60S5F-D.PDF
NTHL019N60S5F
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET V, FRFET, 600 V, 75 A, 19 mohm, TO-247
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.85 EUR
10+19.78 EUR
120+17.02 EUR
510+16.17 EUR
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NTHL099N60S5 NTHL099N60S5-D.PDF
NTHL099N60S5
Hersteller: onsemi
MOSFETs Power MOSFET, N-Channel, SUPERFET V, Easy Drive, 600 V, 33 A, 99 mohm, TO-247
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.2 EUR
10+6.44 EUR
120+5.4 EUR
1020+5.33 EUR
2520+5.19 EUR
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NTHL099N60S5 nthl099n60s5-d.pdf
NTHL099N60S5
Hersteller: onsemi
Description: NTHL099N60S5
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.19 EUR
10+7.04 EUR
30+6.42 EUR
120+5.86 EUR
Mindestbestellmenge: 2
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
PJMF099N60EC_T0_00601
Hersteller: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 1973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.23 EUR
50+6.16 EUR
Mindestbestellmenge: 3
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
PJMF099N60EC_T0_00601
Hersteller: Panjit
MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.11 EUR
10+4.86 EUR
100+4.07 EUR
500+3.87 EUR
1000+3.64 EUR
2500+3.57 EUR
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PJMH099N60EC_T0_00601 PJMH099N60EC.pdf
PJMH099N60EC_T0_00601
Hersteller: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
30+7.07 EUR
120+6.32 EUR
510+5.51 EUR
1020+4.73 EUR
Mindestbestellmenge: 2
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PJMH099N60EC_T0_00601 C7DA8B48387405CDB30D1C21C6DE548F3F4E86D76DDE487A7CEA756F9D630321.pdf
PJMH099N60EC_T0_00601
Hersteller: Panjit
MOSFETs 600V/ 99mohms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.84 EUR
10+8.01 EUR
120+6.46 EUR
510+5.76 EUR
1020+4.93 EUR
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PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
PJMP099N60EC_T0_00601
Hersteller: Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.55 EUR
50+6.39 EUR
100+6.25 EUR
500+6.02 EUR
Mindestbestellmenge: 2
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PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
PJMP099N60EC_T0_00601
Hersteller: Panjit
MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.35 EUR
10+6.42 EUR
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SIHD9N60E-GE3 sihd9n60e.pdf
SIHD9N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.17 EUR
10+2.68 EUR
100+1.88 EUR
500+1.57 EUR
1000+1.44 EUR
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SIHFS9N60A-GE3 sihs9n60.pdf
SIHFS9N60A-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds TO-263 D2PAK
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.49 EUR
10+2.89 EUR
100+2.08 EUR
500+1.74 EUR
1000+1.66 EUR
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SIHG039N60E-GE3 sihg039n60e.pdf
SIHG039N60E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 650V Vds; 30V Vgs TO-247AC
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.21 EUR
10+10.75 EUR
500+10.33 EUR
1000+10.17 EUR
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SIHG039N60E-GE3 sihg039n60e.pdf
SIHG039N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 63A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.16 EUR
25+10.71 EUR
100+10.13 EUR
Mindestbestellmenge: 2
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SIHG039N60EF-GE3 tf-sihg039n60ef-ge3.pdf
SIHG039N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 600V 61A N-CH MOSFET
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.43 EUR
10+12.04 EUR
100+10.05 EUR
500+9.42 EUR
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SIHG039N60EF-GE3 tf-sihg039n60ef-ge3.pdf
SIHG039N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 61A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.39 EUR
10+12 EUR
100+10.01 EUR
Mindestbestellmenge: 2
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 3636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
12+1.5 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
Mindestbestellmenge: 9
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 2616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.13 EUR
10+1.47 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
2500+0.68 EUR
5000+0.65 EUR
Mindestbestellmenge: 2
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STD9N60M2 en.DM00080324.pdf
STD9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.7 EUR
Mindestbestellmenge: 2500
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STF9N60M2 en.DM00086741.pdf
STF9N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 720mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
55+1.32 EUR
85+0.85 EUR
89+0.8 EUR
Mindestbestellmenge: 43
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STF9N60M2 en.DM00086741.pdf
STF9N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 720mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 10nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.69 EUR
55+1.32 EUR
85+0.85 EUR
89+0.8 EUR
500+0.79 EUR
1000+0.77 EUR
Mindestbestellmenge: 43
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STF9N60M2 en.DM00086741.pdf
STF9N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 1836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.38 EUR
10+1.83 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.93 EUR
2000+0.83 EUR
5000+0.78 EUR
Mindestbestellmenge: 2
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STF9N60M2 en.DM00086741.pdf
STF9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
10+1.82 EUR
100+1.28 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 8
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STL19N60M6 en.DM00671637.pdf
STL19N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.11 EUR
10+4 EUR
100+2.82 EUR
500+2.53 EUR
Mindestbestellmenge: 3
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STL9N60M2 en.DM00102384.pdf
STL9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.26 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.2 EUR
Mindestbestellmenge: 5
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STP9N60M2 en.DM00080324.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: 25V
On-state resistance: 780mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.04 EUR
Mindestbestellmenge: 100
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STU9N60M2 en.DM00080324.pdf
STU9N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
75+1.06 EUR
150+0.96 EUR
525+0.91 EUR
1050+0.81 EUR
Mindestbestellmenge: 7
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STU9N60M2 en.DM00080324.pdf
STU9N60M2
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.75 EUR
10+1.06 EUR
100+0.97 EUR
500+0.91 EUR
1000+0.8 EUR
3000+0.75 EUR
Mindestbestellmenge: 2
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TK099N60Z1,S1F TK099N60Z1_datasheet_en_20240826.pdf?did=159763&prodName=TK099N60Z1
TK099N60Z1,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 930µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
30+4.42 EUR
Mindestbestellmenge: 3
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TK099N60Z1,S1F TK099N60Z1_datasheet_en_20240826.pdf?did=159763&prodName=TK099N60Z1
TK099N60Z1,S1F
Hersteller: Toshiba
MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TO-247, DTMOS?
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.48 EUR
10+5.47 EUR
120+3.66 EUR
510+3.15 EUR
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TK39N60W,S1VF docget.jsp?did=13613&prodName=TK39N60W
TK39N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.77 EUR
Mindestbestellmenge: 2
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TK39N60W,S1VF 01521AA250BCA9EB1061DC14932768AA0738ACD74EF0F0BF758B62E13F31E519.pdf
TK39N60W,S1VF
Hersteller: Toshiba
MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.6 EUR
10+6.25 EUR
120+5.24 EUR
510+4.86 EUR
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TK39N60W5,S1VF docget.jsp?did=14536&prodName=TK39N60W5
TK39N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.21 EUR
30+6.55 EUR
120+6.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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