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SSS6N60A SSS6N60A
Produktcode: 43341 		Samsung sss6n60a-samsung.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 8 Stück
1+1.66 EUR
SSS6N60A SSS6N60A
Produktcode: 172151 		Fairchild Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 41 Stück:
Lieferzeit 21-28 Tag (e)
STF6N60M2
Produktcode: 155644 		ST stf6n60m2.pdf Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 42 Stück:
Lieferzeit 21-28 Tag (e)
6n60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
6N60C FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
FCP16N60 FCP16N60 onsemi / Fairchild FCP16N60_D-2312210.pdf MOSFET 600V N-CH MOSFET SuperFET
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.53 EUR
10+ 5.9 EUR
50+ 5.17 EUR
100+ 4.44 EUR
500+ 3.94 EUR
1000+ 3.17 EUR
5000+ 3.15 EUR
FCP16N60 FCP16N60 onsemi fcp16n60-d.pdf Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1942 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
50+ 5.13 EUR
100+ 4.4 EUR
500+ 3.91 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 3
FCPF16N60 FCPF16N60 onsemi / Fairchild FCP16N60_D-2312210.pdf MOSFET 600V N-CH SuperFET
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.13 EUR
10+ 5.97 EUR
50+ 5.63 EUR
100+ 4.82 EUR
250+ 4.56 EUR
500+ 4.29 EUR
1000+ 3.45 EUR
FQI6N60CTU FQI6N60CTU Fairchild Semiconductor FAIRS25433-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
398+1.22 EUR
Mindestbestellmenge: 398
FQPF6N60C FQPF6N60C Fairchild Semiconductor FAIRS27209-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
423+1.15 EUR
Mindestbestellmenge: 423
HI1206N601R-10 HI1206N601R-10 Laird Performance Materials HI1206N601R_10-2947010.pdf Ferrite Beads High-Freq Solid Ferrite Cable Cores
auf Bestellung 10428 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.38 EUR
10+ 0.31 EUR
100+ 0.2 EUR
250+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
3000+ 0.12 EUR
Mindestbestellmenge: 8
IGD06N60TATMA1 Infineon INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.88 EUR
Mindestbestellmenge: 20
IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
Mindestbestellmenge: 12
IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.65 EUR
5000+ 0.62 EUR
Mindestbestellmenge: 2500
IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies Infineon_IGD06N60T_DS_v02_02_EN-1731501.pdf IGBT Transistors HOME APPLIANCES 14
auf Bestellung 14014 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.26 EUR
10+ 0.87 EUR
100+ 0.85 EUR
500+ 0.81 EUR
1000+ 0.72 EUR
2500+ 0.64 EUR
5000+ 0.62 EUR
Mindestbestellmenge: 3
IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies 1621866021332542infineon-igd06n60t-ds-v02_02-en.pdffileiddb3a3043341f67a101344624.pdf Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IGP06N60T IGP06N60T Infineon Technologies Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.36 EUR
10+ 1.95 EUR
100+ 1.52 EUR
500+ 1.28 EUR
1000+ 1.05 EUR
2500+ 0.99 EUR
5000+ 0.94 EUR
Mindestbestellmenge: 2
IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
54+ 1.33 EUR
61+ 1.19 EUR
71+ 1 EUR
Mindestbestellmenge: 49
IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
54+ 1.33 EUR
61+ 1.19 EUR
71+ 1 EUR
Mindestbestellmenge: 49
IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883 Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
50+ 1.9 EUR
100+ 1.51 EUR
Mindestbestellmenge: 8
IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.39 EUR
10+ 1.92 EUR
100+ 1.52 EUR
500+ 1.28 EUR
1000+ 0.99 EUR
5000+ 0.94 EUR
10000+ 0.93 EUR
Mindestbestellmenge: 2
IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies igp06n60t rev2_2g.pdf Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
IKA06N60T IKA06N60T Infineon Technologies Infineon_IKA06N60T_DS_v02_05_EN-3362085.pdf description IGBT Transistors LOW LOSS DuoPack 600V 6.2A
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.59 EUR
10+ 2.02 EUR
100+ 1.67 EUR
250+ 1.65 EUR
500+ 1.37 EUR
1000+ 1.17 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 2
IKA06N60TXKSA1 IKA06N60TXKSA1 Infineon Technologies IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
50+ 2.06 EUR
100+ 1.7 EUR
Mindestbestellmenge: 7
IKB06N60T IKB06N60T Infineon Technologies Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.75 EUR
10+ 2.29 EUR
100+ 1.83 EUR
250+ 1.69 EUR
500+ 1.52 EUR
1000+ 1.3 EUR
2000+ 1.24 EUR
Mindestbestellmenge: 2
IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2 Description: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
12+ 1.59 EUR
100+ 1.27 EUR
500+ 1.15 EUR
Mindestbestellmenge: 10
IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 945 Stücke:
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2+1.94 EUR
10+ 1.61 EUR
100+ 1.28 EUR
500+ 1.2 EUR
Mindestbestellmenge: 2
IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies infineon-ikb06n60t-datasheet-v02_05-en.pdf Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
76+ 0.95 EUR
95+ 0.76 EUR
100+ 0.72 EUR
500+ 0.69 EUR
Mindestbestellmenge: 68
IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1213 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
76+ 0.95 EUR
95+ 0.76 EUR
100+ 0.72 EUR
500+ 0.69 EUR
Mindestbestellmenge: 68
IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon_IKD06N60R_DS_v02_05_EN-1226890.pdf IGBT Transistors IGBT w/ INTG DIODE 600V 12A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.76 EUR
10+ 1.44 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
2500+ 0.71 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 2
IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 10
IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.72 EUR
Mindestbestellmenge: 2500
IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.67 EUR
Mindestbestellmenge: 2500
IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 IGBT Transistors HOME APPLIANCES 14
auf Bestellung 4860 Stücke:
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3+1.26 EUR
10+ 1.13 EUR
100+ 1 EUR
500+ 0.88 EUR
1000+ 0.71 EUR
2500+ 0.67 EUR
5000+ 0.64 EUR
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4464 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
14+ 1.32 EUR
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500+ 0.87 EUR
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IKD06N60RF Infineon 12A; 600V; 100W; IGBT w/ Diode   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.03 EUR
Mindestbestellmenge: 20
IKD06N60RF IKD06N60RF Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf IGBT Transistors IGBT PRODUCTS TrenchStop
auf Bestellung 1356 Stücke:
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2+1.99 EUR
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH/FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
16+ 1.15 EUR
100+ 0.9 EUR
500+ 0.76 EUR
1000+ 0.75 EUR
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf IGBT Transistors IGBT PRODUCTS
auf Bestellung 2116 Stücke:
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3+1.11 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5676 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.52 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 Description: IGBT 600V 8A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 3000 Stücke:
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3000+0.49 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 IGBT Transistors HOME APPLIANCES 14
auf Bestellung 2940 Stücke:
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3+1.05 EUR
10+ 0.91 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.51 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 Infineon Technologies IKP06N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcc72f95356d Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2384 Stücke:
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7+2.69 EUR
50+ 2.16 EUR
100+ 1.71 EUR
500+ 1.45 EUR
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2000+ 1.11 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 Infineon Technologies Infineon_IKP06N60T_DataSheet_v02_05_EN-3362224.pdf IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.71 EUR
10+ 2.2 EUR
100+ 1.74 EUR
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5000+ 1.07 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 Infineon Technologies 5985ikp06n60trev2_3g5b15d.pdffolderiddb3a3043156fd5730115f56849b61941.pdf Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
IKU06N60R IKU06N60R Infineon Technologies INFNS19240-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
562+0.86 EUR
Mindestbestellmenge: 562
IRFIB6N60A Vishay sihfib6n.pdf N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.92 EUR
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IRFIB6N60APBF IRFIB6N60APBF Vishay Semiconductors sihfib6n.pdf MOSFET 600V N-CH HEXFET
auf Bestellung 4883 Stücke:
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1+5.28 EUR
10+ 4.66 EUR
25+ 4 EUR
100+ 3.57 EUR
250+ 3.56 EUR
500+ 3.33 EUR
1000+ 2.89 EUR
IRFIB6N60APBF IRFIB6N60APBF Vishay Siliconix sihfib6n.pdf Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.51 EUR
50+ 5.17 EUR
100+ 4.43 EUR
500+ 3.94 EUR
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IRFP26N60LPBF IRFP26N60LPBF Vishay Siliconix TO247AC_Front.jpg Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
auf Bestellung 1384 Stücke:
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2+10.98 EUR
25+ 8.77 EUR
100+ 8.12 EUR
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IRFP26N60LPBF IRFP26N60LPBF Vishay Semiconductors TO247AC_Front.jpg MOSFET 600V N-CH HEXFET
auf Bestellung 1395 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.94 EUR
10+ 9.33 EUR
25+ 7.71 EUR
500+ 7.69 EUR
IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.89 EUR
12+ 6.03 EUR
Mindestbestellmenge: 9
IXFH26N60P IXFH26N60P IXYS media-3321580.pdf MOSFET 600V 26A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.08 EUR
10+ 14.61 EUR
30+ 11.81 EUR
IXFH36N60P IXFH36N60P IXYS media-3323767.pdf MOSFET 600V 36A
auf Bestellung 5 Stücke:
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1+18.64 EUR
10+ 16.44 EUR
30+ 16 EUR
60+ 15.08 EUR
120+ 14.4 EUR
IXFH36N60X3 IXFH36N60X3 IXYS media-3320246.pdf MOSFET DISCRETE MOSFET 36A 600V X3 TO
auf Bestellung 461 Stücke:
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1+13.43 EUR
10+ 11.51 EUR
120+ 9.59 EUR
270+ 9.57 EUR
510+ 8.1 EUR
1020+ 7.25 EUR
IXFH36N60X3 IXFH36N60X3 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh36n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.38 EUR
30+ 7.48 EUR
120+ 6.93 EUR
Mindestbestellmenge: 2
IXFK36N60P IXFK36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.16 EUR
7+ 10.88 EUR
Mindestbestellmenge: 5
IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
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13+5.65 EUR
15+ 5.08 EUR
18+ 4.05 EUR
19+ 3.83 EUR
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IXFR36N60P IXFR36N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr36n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.74 EUR
30+ 14.03 EUR
Mindestbestellmenge: 2
SSS6N60A
Produktcode: 43341		 sss6n60a-samsung.pdf
SSS6N60A
Hersteller: Samsung
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 8 Stück
Anzahl Preis ohne MwSt
1+1.66 EUR
SSS6N60A
Produktcode: 172151
SSS6N60A
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 41 Stück:
Lieferzeit 21-28 Tag (e)
STF6N60M2
Produktcode: 155644		 stf6n60m2.pdf
Hersteller: ST
Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 42 Stück:
Lieferzeit 21-28 Tag (e)
6n60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
6N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
FCP16N60 FCP16N60_D-2312210.pdf
FCP16N60
Hersteller: onsemi / Fairchild
MOSFET 600V N-CH MOSFET SuperFET
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.53 EUR
10+ 5.9 EUR
50+ 5.17 EUR
100+ 4.44 EUR
500+ 3.94 EUR
1000+ 3.17 EUR
5000+ 3.15 EUR
FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.48 EUR
50+ 5.13 EUR
100+ 4.4 EUR
500+ 3.91 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 3
FCPF16N60 FCP16N60_D-2312210.pdf
FCPF16N60
Hersteller: onsemi / Fairchild
MOSFET 600V N-CH SuperFET
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.13 EUR
10+ 5.97 EUR
50+ 5.63 EUR
100+ 4.82 EUR
250+ 4.56 EUR
500+ 4.29 EUR
1000+ 3.45 EUR
FQI6N60CTU FAIRS25433-1.pdf?t.download=true&u=5oefqw
FQI6N60CTU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
398+1.22 EUR
Mindestbestellmenge: 398
FQPF6N60C FAIRS27209-1.pdf?t.download=true&u=5oefqw
FQPF6N60C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
423+1.15 EUR
Mindestbestellmenge: 423
HI1206N601R-10 HI1206N601R_10-2947010.pdf
HI1206N601R-10
Hersteller: Laird Performance Materials
Ferrite Beads High-Freq Solid Ferrite Cable Cores
auf Bestellung 10428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.38 EUR
10+ 0.31 EUR
100+ 0.2 EUR
250+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.13 EUR
3000+ 0.12 EUR
Mindestbestellmenge: 8
IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.88 EUR
Mindestbestellmenge: 20
IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.58 EUR
Mindestbestellmenge: 12
IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.65 EUR
5000+ 0.62 EUR
Mindestbestellmenge: 2500
IGD06N60TATMA1 Infineon_IGD06N60T_DS_v02_02_EN-1731501.pdf
IGD06N60TATMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 14014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.26 EUR
10+ 0.87 EUR
100+ 0.85 EUR
500+ 0.81 EUR
1000+ 0.72 EUR
2500+ 0.64 EUR
5000+ 0.62 EUR
Mindestbestellmenge: 3
IGD06N60TATMA1 1621866021332542infineon-igd06n60t-ds-v02_02-en.pdffileiddb3a3043341f67a101344624.pdf
IGD06N60TATMA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IGP06N60T Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf
IGP06N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.36 EUR
10+ 1.95 EUR
100+ 1.52 EUR
500+ 1.28 EUR
1000+ 1.05 EUR
2500+ 0.99 EUR
5000+ 0.94 EUR
Mindestbestellmenge: 2
IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
49+1.49 EUR
54+ 1.33 EUR
61+ 1.19 EUR
71+ 1 EUR
Mindestbestellmenge: 49
IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.49 EUR
54+ 1.33 EUR
61+ 1.19 EUR
71+ 1 EUR
Mindestbestellmenge: 49
IGP06N60TXKSA1 IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883
IGP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.38 EUR
50+ 1.9 EUR
100+ 1.51 EUR
Mindestbestellmenge: 8
IGP06N60TXKSA1 Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf
IGP06N60TXKSA1
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.39 EUR
10+ 1.92 EUR
100+ 1.52 EUR
500+ 1.28 EUR
1000+ 0.99 EUR
5000+ 0.94 EUR
10000+ 0.93 EUR
Mindestbestellmenge: 2
IGP06N60TXKSA1 igp06n60t rev2_2g.pdf
IGP06N60TXKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)
IKA06N60T description Infineon_IKA06N60T_DS_v02_05_EN-3362085.pdf
IKA06N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 6.2A
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.59 EUR
10+ 2.02 EUR
100+ 1.67 EUR
250+ 1.65 EUR
500+ 1.37 EUR
1000+ 1.17 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 2
IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
50+ 2.06 EUR
100+ 1.7 EUR
Mindestbestellmenge: 7
IKB06N60T Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf
IKB06N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.75 EUR
10+ 2.29 EUR
100+ 1.83 EUR
250+ 1.69 EUR
500+ 1.52 EUR
1000+ 1.3 EUR
2000+ 1.24 EUR
Mindestbestellmenge: 2
IKB06N60TATMA1 IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2
IKB06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.59 EUR
100+ 1.27 EUR
500+ 1.15 EUR
Mindestbestellmenge: 10
IKB06N60TATMA1 Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf
IKB06N60TATMA1
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.94 EUR
10+ 1.61 EUR
100+ 1.28 EUR
500+ 1.2 EUR
Mindestbestellmenge: 2
IKB06N60TATMA1 infineon-ikb06n60t-datasheet-v02_05-en.pdf
IKB06N60TATMA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
76+ 0.95 EUR
95+ 0.76 EUR
100+ 0.72 EUR
500+ 0.69 EUR
Mindestbestellmenge: 68
IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1213 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
76+ 0.95 EUR
95+ 0.76 EUR
100+ 0.72 EUR
500+ 0.69 EUR
Mindestbestellmenge: 68
IKD06N60RATMA1 Infineon_IKD06N60R_DS_v02_05_EN-1226890.pdf
IKD06N60RATMA1
Hersteller: Infineon Technologies
IGBT Transistors IGBT w/ INTG DIODE 600V 12A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.76 EUR
10+ 1.44 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
2500+ 0.71 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 2
IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 10
IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.72 EUR
Mindestbestellmenge: 2500
IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.67 EUR
Mindestbestellmenge: 2500
IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 4860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.26 EUR
10+ 1.13 EUR
100+ 1 EUR
500+ 0.88 EUR
1000+ 0.71 EUR
2500+ 0.67 EUR
5000+ 0.64 EUR
Mindestbestellmenge: 3
IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
14+ 1.32 EUR
100+ 1.03 EUR
500+ 0.87 EUR
1000+ 0.71 EUR
Mindestbestellmenge: 11
IKD06N60RF
Hersteller: Infineon
12A; 600V; 100W; IGBT w/ Diode   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.03 EUR
Mindestbestellmenge: 20
IKD06N60RF Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf
IKD06N60RF
Hersteller: Infineon Technologies
IGBT Transistors IGBT PRODUCTS TrenchStop
auf Bestellung 1356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.99 EUR
10+ 1.64 EUR
100+ 1.28 EUR
500+ 1.09 EUR
1000+ 0.89 EUR
2500+ 0.87 EUR
5000+ 0.86 EUR
Mindestbestellmenge: 2
IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
16+ 1.15 EUR
100+ 0.9 EUR
500+ 0.76 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 13
IKD06N60RFATMA1 Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf
IKD06N60RFATMA1
Hersteller: Infineon Technologies
IGBT Transistors IGBT PRODUCTS
auf Bestellung 2116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.11 EUR
10+ 0.96 EUR
100+ 0.84 EUR
500+ 0.79 EUR
Mindestbestellmenge: 3
IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 17
IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.49 EUR
Mindestbestellmenge: 3000
IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.91 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 3
IKP06N60TXKSA1 IKP06N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcc72f95356d
IKP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.69 EUR
50+ 2.16 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
2000+ 1.11 EUR
Mindestbestellmenge: 7
IKP06N60TXKSA1 Infineon_IKP06N60T_DataSheet_v02_05_EN-3362224.pdf
IKP06N60TXKSA1
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 6A
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.71 EUR
10+ 2.2 EUR
100+ 1.74 EUR
500+ 1.46 EUR
1000+ 1.12 EUR
5000+ 1.07 EUR
10000+ 1.06 EUR
Mindestbestellmenge: 2
IKP06N60TXKSA1 5985ikp06n60trev2_3g5b15d.pdffolderiddb3a3043156fd5730115f56849b61941.pdf
IKP06N60TXKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
IKU06N60R INFNS19240-1.pdf?t.download=true&u=5oefqw
IKU06N60R
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
562+0.86 EUR
Mindestbestellmenge: 562
IRFIB6N60A sihfib6n.pdf
Hersteller: Vishay
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.92 EUR
Mindestbestellmenge: 20
IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Semiconductors
MOSFET 600V N-CH HEXFET
auf Bestellung 4883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.28 EUR
10+ 4.66 EUR
25+ 4 EUR
100+ 3.57 EUR
250+ 3.56 EUR
500+ 3.33 EUR
1000+ 2.89 EUR
IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.51 EUR
50+ 5.17 EUR
100+ 4.43 EUR
500+ 3.94 EUR
Mindestbestellmenge: 3
IRFP26N60LPBF TO247AC_Front.jpg
IRFP26N60LPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
auf Bestellung 1384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.98 EUR
25+ 8.77 EUR
100+ 8.12 EUR
Mindestbestellmenge: 2
IRFP26N60LPBF TO247AC_Front.jpg
IRFP26N60LPBF
Hersteller: Vishay Semiconductors
MOSFET 600V N-CH HEXFET
auf Bestellung 1395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.94 EUR
10+ 9.33 EUR
25+ 7.71 EUR
500+ 7.69 EUR
IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.89 EUR
12+ 6.03 EUR
Mindestbestellmenge: 9
IXFH26N60P media-3321580.pdf
IXFH26N60P
Hersteller: IXYS
MOSFET 600V 26A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.08 EUR
10+ 14.61 EUR
30+ 11.81 EUR
IXFH36N60P media-3323767.pdf
IXFH36N60P
Hersteller: IXYS
MOSFET 600V 36A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.64 EUR
10+ 16.44 EUR
30+ 16 EUR
60+ 15.08 EUR
120+ 14.4 EUR
IXFH36N60X3 media-3320246.pdf
IXFH36N60X3
Hersteller: IXYS
MOSFET DISCRETE MOSFET 36A 600V X3 TO
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.43 EUR
10+ 11.51 EUR
120+ 9.59 EUR
270+ 9.57 EUR
510+ 8.1 EUR
1020+ 7.25 EUR
IXFH36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh36n60x3_datasheet.pdf.pdf
IXFH36N60X3
Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.38 EUR
30+ 7.48 EUR
120+ 6.93 EUR
Mindestbestellmenge: 2
IXFK36N60P IXFH(K,T)36N60P.pdf
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.16 EUR
7+ 10.88 EUR
Mindestbestellmenge: 5
IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.65 EUR
15+ 5.08 EUR
18+ 4.05 EUR
19+ 3.83 EUR
Mindestbestellmenge: 13
IXFR36N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr36n60p_datasheet.pdf.pdf
IXFR36N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.74 EUR
30+ 14.03 EUR
Mindestbestellmenge: 2
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