Suchergebnisse für "6N80" : > 60

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FQA6N80 FQA6N80 Fairchild Semiconductor FAIRS09594-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 6.3A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 3.15A, 10V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 1562 Stücke:
Lieferzeit 10-14 Tag (e)
254+1.96 EUR
Mindestbestellmenge: 254
FQAF6N80 FQAF6N80 Fairchild Semiconductor FAIRS09690-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
173+2.87 EUR
Mindestbestellmenge: 173
FQB6N80TM ON-Semicoductor fqb6n80-d.pdf N-MOSFET 5.8A 800V 158W 1.95Ω FQB6N80TM TFQB6n80tm
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.21 EUR
Mindestbestellmenge: 10
FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
40+ 1.82 EUR
42+ 1.72 EUR
Mindestbestellmenge: 26
FQP6N80C ON-Semicoductor fqpf6n80c-d.pdf Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB FQP6N80C TFQP6n80c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.17 EUR
Mindestbestellmenge: 20
FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.79 EUR
40+ 1.82 EUR
42+ 1.72 EUR
500+ 1.64 EUR
Mindestbestellmenge: 26
FQP6N80C FQP6N80C onsemi / Fairchild FQPF6N80C_D-2313685.pdf MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 3703 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.82 EUR
10+ 3.06 EUR
100+ 2.52 EUR
250+ 2.48 EUR
500+ 2.18 EUR
1000+ 1.76 EUR
5000+ 1.66 EUR
FQP6N80C FQP6N80C onsemi fqpf6n80c-d.pdf Description: MOSFET N-CH 800V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.84 EUR
50+ 3.08 EUR
100+ 2.54 EUR
500+ 2.15 EUR
Mindestbestellmenge: 5
FQP6N80C FQP6N80C ON Semiconductor fqpf6n80c.pdf Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
FQPF6N80C FQPF6N80C onsemi fqpf6n80c-d.pdf Description: MOSFET N-CH 800V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
50+ 2.94 EUR
100+ 2.42 EUR
Mindestbestellmenge: 5
FQPF6N80C FQPF6N80C ON Semiconductor fqpf6n80c.pdf Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
HI1206N800R-10 HI1206N800R-10 Laird-Signal Integrity Products hi1206n800r-10-datasheet Description: FERRITE BEAD 80 OHM 1206 1LN
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Filter Type: Power, Signal Line
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.043" (1.10mm)
Current Rating (Max): 3A
DC Resistance (DCR) (Max): 35mOhm
Part Status: Active
Number of Lines: 1
Impedance @ Frequency: 80 Ohms @ 100 MHz
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.099 EUR
15000+ 0.097 EUR
Mindestbestellmenge: 3000
HI1206N800R-10 HI1206N800R-10 Laird-Signal Integrity Products hi1206n800r-10-datasheet Description: FERRITE BEAD 80 OHM 1206 1LN
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Filter Type: Power, Signal Line
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.043" (1.10mm)
Current Rating (Max): 3A
DC Resistance (DCR) (Max): 35mOhm
Part Status: Active
Number of Lines: 1
Impedance @ Frequency: 80 Ohms @ 100 MHz
auf Bestellung 103771 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
65+ 0.27 EUR
79+ 0.22 EUR
92+ 0.19 EUR
102+ 0.17 EUR
250+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 50
HI1206N800R-10 HI1206N800R-10 Laird Performance Materials hi1206n800r_10_datasheet-2947039.pdf Ferrite Beads 80ohms 100MHz 3A Monolithic 1206 SMD
auf Bestellung 57001 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.34 EUR
15+ 0.19 EUR
100+ 0.17 EUR
250+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 9
HI1206N800R-10 HI1206N800R-10 LAIRD 40849355371245752hi1206n800r-10.pdf Ferrite Beads High Current Chip 80Ohm 25% 100MHz 3A 0.035Ohm DCR 1206 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH16N80P IXFH16N80P IXYS media-3320744.pdf MOSFET 16 Amps 800V 0.6 Rds
auf Bestellung 300 Stücke:
Lieferzeit 332-336 Tag (e)
1+14.63 EUR
10+ 13.34 EUR
30+ 11.7 EUR
120+ 10.58 EUR
270+ 10.47 EUR
SIHA6N80AE-GE3 SIHA6N80AE-GE3 Vishay Semiconductors siha6n80ae.pdf MOSFET N-CHANNEL 800V TO-220FP
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.59 EUR
10+ 2.08 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 2
SIHA6N80AE-GE3 SIHA6N80AE-GE3 Vishay Siliconix siha6n80ae.pdf Description: MOSFET N-CH 800V 5A TO220
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
12+ 1.56 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 10
SIHA6N80AE-GE3 SIHA6N80AE-GE3 Vishay Siliconix siha6n80ae.pdf Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
50+ 1.47 EUR
100+ 1.16 EUR
500+ 0.99 EUR
Mindestbestellmenge: 10
SIHB6N80AE-GE3 SIHB6N80AE-GE3 Vishay Siliconix sihb6n80ae.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.27 EUR
50+ 2.64 EUR
100+ 2.17 EUR
500+ 1.84 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 6
SIHB6N80E-GE3 SIHB6N80E-GE3 Vishay / Siliconix sihb6n80e.pdf MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.33 EUR
10+ 3.63 EUR
100+ 2.89 EUR
250+ 2.66 EUR
500+ 2.41 EUR
1000+ 2.04 EUR
SIHD6N80AE-GE3 SIHD6N80AE-GE3 Vishay Siliconix sihd6n80ae.pdf Description: MOSFET N-CH 800V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
75+ 1.18 EUR
150+ 0.94 EUR
525+ 0.8 EUR
1050+ 0.79 EUR
Mindestbestellmenge: 12
SIHD6N80AE-GE3 SIHD6N80AE-GE3 Vishay Semiconductors sihd6n80ae.pdf MOSFET N-CHANNEL 800V DPAK (TO-252)
auf Bestellung 4187 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.08 EUR
10+ 1.42 EUR
100+ 1.17 EUR
500+ 1.04 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 2
SIHD6N80AE-GE3 Vishay sihd6n80ae.pdf Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
SIHD6N80E-GE3 SIHD6N80E-GE3 Vishay Siliconix sihd6n80e.pdf Description: MOSFET N-CH 800V 5.4A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
10+ 1.97 EUR
100+ 1.57 EUR
500+ 1.42 EUR
Mindestbestellmenge: 8
SIHD6N80E-GE3 SIHD6N80E-GE3 Vishay Semiconductors sihd6n80e.pdf MOSFET 800V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2417 Stücke:
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1+3.36 EUR
10+ 2.78 EUR
100+ 2.22 EUR
250+ 2.13 EUR
500+ 2.02 EUR
1000+ 1.83 EUR
3000+ 1.61 EUR
SIHP6N80AE-GE3 SIHP6N80AE-GE3 Vishay / Siliconix sihp6n80ae.pdf MOSFET N-CHANNEL 800V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.68 EUR
10+ 2.15 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
2000+ 1.1 EUR
5000+ 1.06 EUR
Mindestbestellmenge: 2
SIHP6N80AE-GE3 SIHP6N80AE-GE3 Vishay Siliconix sihp6n80ae.pdf Description: MOSFET N-CH 800V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
50+ 2.15 EUR
100+ 1.71 EUR
500+ 1.45 EUR
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SIHP6N80E-BE3 SIHP6N80E-BE3 Vishay Siliconix sihp6n80e.pdf Description: N-CHANNEL 800V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
50+ 3.1 EUR
100+ 2.55 EUR
500+ 2.16 EUR
Mindestbestellmenge: 5
SIHP6N80E-BE3 SIHP6N80E-BE3 Vishay / Siliconix sihp6n80e.pdf MOSFET N-CHANNEL 800V
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.85 EUR
10+ 2.76 EUR
100+ 2.39 EUR
250+ 2.31 EUR
500+ 2.22 EUR
1000+ 2.2 EUR
2500+ 2.15 EUR
SIHP6N80E-GE3 SIHP6N80E-GE3 Vishay / Siliconix sihp6n80e.pdf MOSFET 800V Vds 30V Vgs TO-220AB
auf Bestellung 646 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.85 EUR
10+ 3.19 EUR
100+ 2.53 EUR
250+ 2.36 EUR
500+ 2.13 EUR
1000+ 1.78 EUR
2000+ 1.75 EUR
SIHU6N80AE-GE3 SIHU6N80AE-GE3 Vishay Semiconductors sihu6n80ae.pdf MOSFET N-CHANNEL 800V IPAK (TO-251)
auf Bestellung 5653 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.25 EUR
10+ 1.85 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 0.99 EUR
3000+ 0.96 EUR
6000+ 0.93 EUR
Mindestbestellmenge: 2
SIHU6N80E-GE3 SIHU6N80E-GE3 Vishay Siliconix sihu6n80e.pdf Description: MOSFET N-CH 800V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
10+ 3.07 EUR
100+ 2.45 EUR
500+ 2.07 EUR
1000+ 1.76 EUR
3000+ 1.67 EUR
Mindestbestellmenge: 5
SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.43 EUR
33+ 2.19 EUR
38+ 1.93 EUR
43+ 1.67 EUR
46+ 1.59 EUR
Mindestbestellmenge: 30
SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.43 EUR
33+ 2.19 EUR
38+ 1.93 EUR
43+ 1.67 EUR
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Mindestbestellmenge: 30
SPA06N80C3 SPA06N80C3 Infineon Technologies Infineon_SPA06N80C3_DS_v02_92_EN-1732185.pdf MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3
auf Bestellung 3385 Stücke:
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10+ 2.9 EUR
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250+ 2.2 EUR
500+ 1.87 EUR
1000+ 1.65 EUR
2500+ 1.57 EUR
SPA06N80C3XKSA1 SPA06N80C3XKSA1 Infineon Technologies Infineon_SPA06N80C3_DS_v02_92_EN-1732185.pdf MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3
auf Bestellung 443 Stücke:
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1+3.41 EUR
10+ 2.31 EUR
100+ 2.04 EUR
250+ 2.01 EUR
500+ 1.94 EUR
1000+ 1.57 EUR
SPA06N80C3XKSA1 SPA06N80C3XKSA1 Infineon Technologies SPP_A06N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163854727600cf Description: MOSFET N-CH 800V 6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 13207 Stücke:
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8+2.46 EUR
50+ 1.98 EUR
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SPD06N80C3ATMA1 Infineon Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPD06N80C3ATMA1, SPD06N80C3BTMA1 SPD06N80C3 TSPD06n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
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5+9.24 EUR
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SPD06N80C3ATMA1 SPD06N80C3ATMA1 Infineon Technologies Infineon_SPD06N80C3_DataSheet_v02_94_EN-3363740.pdf MOSFET LOW POWER_LEGACY
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10+ 1.46 EUR
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1000+ 1.39 EUR
2500+ 1.38 EUR
SPD06N80C3ATMA1 SPD06N80C3ATMA1 Infineon Technologies 5257spd06n80c3_rev.2.92.pdffolderiddb3a3043156fd5730115c736bcc70ff2fi.pdf Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
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SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES SPP06N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 29 Stücke:
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24+3.03 EUR
26+ 2.76 EUR
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SPP06N80C3 Infineon description Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPP06N80C3 TSPP06N80C3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 35 Stücke:
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10+3.43 EUR
Mindestbestellmenge: 10
SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES SPP06N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.03 EUR
26+ 2.76 EUR
29+ 2.46 EUR
250+ 2 EUR
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SPP06N80C3 SPP06N80C3 Infineon Technologies Infineon_SPP06N80C3_DS_v02_91_en-1732179.pdf description MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
auf Bestellung 803 Stücke:
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1+3.4 EUR
10+ 2.82 EUR
100+ 2.24 EUR
250+ 2.08 EUR
500+ 1.87 EUR
1000+ 1.61 EUR
2500+ 1.53 EUR
SPP06N80C3XKSA1 SPP06N80C3XKSA1 Infineon Technologies Infineon_SPP06N80C3_DS_v02_91_en-1732179.pdf MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
auf Bestellung 1164 Stücke:
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2+2.78 EUR
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100+ 1.88 EUR
500+ 1.7 EUR
1000+ 1.5 EUR
5000+ 1.49 EUR
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SPP06N80C3XKSA1 SPP06N80C3XKSA1 Infineon Technologies Infineon-SPP06N80C3-DS-v02_91-en.pdf?fileId=db3a304340f610c2014101afea0d5580 Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 4860 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
50+ 2.75 EUR
100+ 2.26 EUR
500+ 1.92 EUR
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SPP06N80C3XKSA1 SPP06N80C3XKSA1 Infineon Technologies spp06n80c3_rev2.91.pdf Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 24863 Stücke:
Lieferzeit 14-21 Tag (e)
STB6N80K5 STB6N80K5 STMicroelectronics stb6n80k5-1850256.pdf MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET
auf Bestellung 1007 Stücke:
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1+3.29 EUR
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STB6N80K5 STB6N80K5 STMicroelectronics 725201003193875dm00085379.pdf Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 42000 Stücke:
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STD6N80K5 STD6N80K5 STMicroelectronics en.DM00085379.pdf Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
auf Bestellung 11037 Stücke:
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5+3.59 EUR
10+ 2.99 EUR
100+ 2.38 EUR
500+ 2.01 EUR
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STD6N80K5 STD6N80K5 STMicroelectronics en.DM00085379.pdf Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
auf Bestellung 5000 Stücke:
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2500+1.62 EUR
5000+ 1.56 EUR
Mindestbestellmenge: 2500
STD6N80K5 STD6N80K5 STMicroelectronics en.DM00085379.pdf MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET
auf Bestellung 2485 Stücke:
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1+3.57 EUR
10+ 2.97 EUR
100+ 2.38 EUR
250+ 2.36 EUR
500+ 1.99 EUR
1000+ 1.7 EUR
2500+ 1.61 EUR
STF6N80K5 STF6N80K5 STMicroelectronics en.DM00085454.pdf Description: MOSFET N-CH 800V 4.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 998 Stücke:
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5+3.98 EUR
50+ 3.19 EUR
100+ 2.63 EUR
500+ 2.22 EUR
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STP6N80K5 STP6N80K5 STMicroelectronics en.DM00085379.pdf MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET
auf Bestellung 1000 Stücke:
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2+2.04 EUR
10+ 1.99 EUR
100+ 1.9 EUR
250+ 1.87 EUR
500+ 1.85 EUR
1000+ 1.75 EUR
5000+ 1.69 EUR
Mindestbestellmenge: 2
WMK06N80M3 WMK06N80M3 WAYON WMx06N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
63+ 1.14 EUR
79+ 0.91 EUR
144+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 53
WMK06N80M3 WMK06N80M3 WAYON WMx06N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.37 EUR
63+ 1.14 EUR
79+ 0.91 EUR
144+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 53
WML06N80M3 WML06N80M3 WAYON WMx06N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
96+ 0.75 EUR
108+ 0.66 EUR
114+ 0.63 EUR
120+ 0.6 EUR
Mindestbestellmenge: 72
WML06N80M3 WML06N80M3 WAYON WMx06N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 468 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
96+ 0.75 EUR
108+ 0.66 EUR
114+ 0.63 EUR
120+ 0.6 EUR
500+ 0.57 EUR
Mindestbestellmenge: 72
DD106N800K AEG 05+
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
FQA6N80 FAIRS09594-1.pdf?t.download=true&u=5oefqw
FQA6N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 6.3A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 3.15A, 10V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 1562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
254+1.96 EUR
Mindestbestellmenge: 254
FQAF6N80 FAIRS09690-1.pdf?t.download=true&u=5oefqw
FQAF6N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 4.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
173+2.87 EUR
Mindestbestellmenge: 173
FQB6N80TM fqb6n80-d.pdf
Hersteller: ON-Semicoductor
N-MOSFET 5.8A 800V 158W 1.95Ω FQB6N80TM TFQB6n80tm
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.21 EUR
Mindestbestellmenge: 10
FQP6N80C FQP6N80C.pdf
FQP6N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
26+2.79 EUR
40+ 1.82 EUR
42+ 1.72 EUR
Mindestbestellmenge: 26
FQP6N80C fqpf6n80c-d.pdf
Hersteller: ON-Semicoductor
Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB FQP6N80C TFQP6n80c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.17 EUR
Mindestbestellmenge: 20
FQP6N80C FQP6N80C.pdf
FQP6N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.79 EUR
40+ 1.82 EUR
42+ 1.72 EUR
500+ 1.64 EUR
Mindestbestellmenge: 26
FQP6N80C FQPF6N80C_D-2313685.pdf
FQP6N80C
Hersteller: onsemi / Fairchild
MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 3703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.82 EUR
10+ 3.06 EUR
100+ 2.52 EUR
250+ 2.48 EUR
500+ 2.18 EUR
1000+ 1.76 EUR
5000+ 1.66 EUR
FQP6N80C fqpf6n80c-d.pdf
FQP6N80C
Hersteller: onsemi
Description: MOSFET N-CH 800V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.84 EUR
50+ 3.08 EUR
100+ 2.54 EUR
500+ 2.15 EUR
Mindestbestellmenge: 5
FQP6N80C fqpf6n80c.pdf
FQP6N80C
Hersteller: ON Semiconductor
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
FQPF6N80C fqpf6n80c-d.pdf
FQPF6N80C
Hersteller: onsemi
Description: MOSFET N-CH 800V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.66 EUR
50+ 2.94 EUR
100+ 2.42 EUR
Mindestbestellmenge: 5
FQPF6N80C fqpf6n80c.pdf
FQPF6N80C
Hersteller: ON Semiconductor
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
HI1206N800R-10 hi1206n800r-10-datasheet
HI1206N800R-10
Hersteller: Laird-Signal Integrity Products
Description: FERRITE BEAD 80 OHM 1206 1LN
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Filter Type: Power, Signal Line
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.043" (1.10mm)
Current Rating (Max): 3A
DC Resistance (DCR) (Max): 35mOhm
Part Status: Active
Number of Lines: 1
Impedance @ Frequency: 80 Ohms @ 100 MHz
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.099 EUR
15000+ 0.097 EUR
Mindestbestellmenge: 3000
HI1206N800R-10 hi1206n800r-10-datasheet
HI1206N800R-10
Hersteller: Laird-Signal Integrity Products
Description: FERRITE BEAD 80 OHM 1206 1LN
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Filter Type: Power, Signal Line
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Height (Max): 0.043" (1.10mm)
Current Rating (Max): 3A
DC Resistance (DCR) (Max): 35mOhm
Part Status: Active
Number of Lines: 1
Impedance @ Frequency: 80 Ohms @ 100 MHz
auf Bestellung 103771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
65+ 0.27 EUR
79+ 0.22 EUR
92+ 0.19 EUR
102+ 0.17 EUR
250+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 50
HI1206N800R-10 hi1206n800r_10_datasheet-2947039.pdf
HI1206N800R-10
Hersteller: Laird Performance Materials
Ferrite Beads 80ohms 100MHz 3A Monolithic 1206 SMD
auf Bestellung 57001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+0.34 EUR
15+ 0.19 EUR
100+ 0.17 EUR
250+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 9
HI1206N800R-10 40849355371245752hi1206n800r-10.pdf
HI1206N800R-10
Hersteller: LAIRD
Ferrite Beads High Current Chip 80Ohm 25% 100MHz 3A 0.035Ohm DCR 1206 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH16N80P media-3320744.pdf
IXFH16N80P
Hersteller: IXYS
MOSFET 16 Amps 800V 0.6 Rds
auf Bestellung 300 Stücke:
Lieferzeit 332-336 Tag (e)
Anzahl Preis ohne MwSt
1+14.63 EUR
10+ 13.34 EUR
30+ 11.7 EUR
120+ 10.58 EUR
270+ 10.47 EUR
SIHA6N80AE-GE3 siha6n80ae.pdf
SIHA6N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 800V TO-220FP
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.59 EUR
10+ 2.08 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 2
SIHA6N80AE-GE3 siha6n80ae.pdf
SIHA6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.3W (Ta), 33W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.56 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 10
SIHA6N80AE-GE3 siha6n80ae.pdf
SIHA6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
50+ 1.47 EUR
100+ 1.16 EUR
500+ 0.99 EUR
Mindestbestellmenge: 10
SIHB6N80AE-GE3 sihb6n80ae.pdf
SIHB6N80AE-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.27 EUR
50+ 2.64 EUR
100+ 2.17 EUR
500+ 1.84 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 6
SIHB6N80E-GE3 sihb6n80e.pdf
SIHB6N80E-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.33 EUR
10+ 3.63 EUR
100+ 2.89 EUR
250+ 2.66 EUR
500+ 2.41 EUR
1000+ 2.04 EUR
SIHD6N80AE-GE3 sihd6n80ae.pdf
SIHD6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
75+ 1.18 EUR
150+ 0.94 EUR
525+ 0.8 EUR
1050+ 0.79 EUR
Mindestbestellmenge: 12
SIHD6N80AE-GE3 sihd6n80ae.pdf
SIHD6N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 800V DPAK (TO-252)
auf Bestellung 4187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.08 EUR
10+ 1.42 EUR
100+ 1.17 EUR
500+ 1.04 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 2
SIHD6N80AE-GE3 sihd6n80ae.pdf
Hersteller: Vishay
Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
SIHD6N80E-GE3 sihd6n80e.pdf
SIHD6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.38 EUR
10+ 1.97 EUR
100+ 1.57 EUR
500+ 1.42 EUR
Mindestbestellmenge: 8
SIHD6N80E-GE3 sihd6n80e.pdf
SIHD6N80E-GE3
Hersteller: Vishay Semiconductors
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 2417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.36 EUR
10+ 2.78 EUR
100+ 2.22 EUR
250+ 2.13 EUR
500+ 2.02 EUR
1000+ 1.83 EUR
3000+ 1.61 EUR
SIHP6N80AE-GE3 sihp6n80ae.pdf
SIHP6N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 800V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.68 EUR
10+ 2.15 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
2000+ 1.1 EUR
5000+ 1.06 EUR
Mindestbestellmenge: 2
SIHP6N80AE-GE3 sihp6n80ae.pdf
SIHP6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.69 EUR
50+ 2.15 EUR
100+ 1.71 EUR
500+ 1.45 EUR
Mindestbestellmenge: 7
SIHP6N80E-BE3 sihp6n80e.pdf
SIHP6N80E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.85 EUR
50+ 3.1 EUR
100+ 2.55 EUR
500+ 2.16 EUR
Mindestbestellmenge: 5
SIHP6N80E-BE3 sihp6n80e.pdf
SIHP6N80E-BE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 800V
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.85 EUR
10+ 2.76 EUR
100+ 2.39 EUR
250+ 2.31 EUR
500+ 2.22 EUR
1000+ 2.2 EUR
2500+ 2.15 EUR
SIHP6N80E-GE3 sihp6n80e.pdf
SIHP6N80E-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V Vds 30V Vgs TO-220AB
auf Bestellung 646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.85 EUR
10+ 3.19 EUR
100+ 2.53 EUR
250+ 2.36 EUR
500+ 2.13 EUR
1000+ 1.78 EUR
2000+ 1.75 EUR
SIHU6N80AE-GE3 sihu6n80ae.pdf
SIHU6N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 800V IPAK (TO-251)
auf Bestellung 5653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.25 EUR
10+ 1.85 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 0.99 EUR
3000+ 0.96 EUR
6000+ 0.93 EUR
Mindestbestellmenge: 2
SIHU6N80E-GE3 sihu6n80e.pdf
SIHU6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.71 EUR
10+ 3.07 EUR
100+ 2.45 EUR
500+ 2.07 EUR
1000+ 1.76 EUR
3000+ 1.67 EUR
Mindestbestellmenge: 5
SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.43 EUR
33+ 2.19 EUR
38+ 1.93 EUR
43+ 1.67 EUR
46+ 1.59 EUR
Mindestbestellmenge: 30
SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.43 EUR
33+ 2.19 EUR
38+ 1.93 EUR
43+ 1.67 EUR
46+ 1.59 EUR
Mindestbestellmenge: 30
SPA06N80C3 Infineon_SPA06N80C3_DS_v02_92_EN-1732185.pdf
SPA06N80C3
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3
auf Bestellung 3385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.47 EUR
10+ 2.9 EUR
100+ 2.29 EUR
250+ 2.2 EUR
500+ 1.87 EUR
1000+ 1.65 EUR
2500+ 1.57 EUR
SPA06N80C3XKSA1 Infineon_SPA06N80C3_DS_v02_92_EN-1732185.pdf
SPA06N80C3XKSA1
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.41 EUR
10+ 2.31 EUR
100+ 2.04 EUR
250+ 2.01 EUR
500+ 1.94 EUR
1000+ 1.57 EUR
SPA06N80C3XKSA1 SPP_A06N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163854727600cf
SPA06N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 13207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
50+ 1.98 EUR
100+ 1.63 EUR
500+ 1.47 EUR
Mindestbestellmenge: 8
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: Infineon
Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPD06N80C3ATMA1, SPD06N80C3BTMA1 SPD06N80C3 TSPD06n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+9.24 EUR
Mindestbestellmenge: 5
SPD06N80C3ATMA1 Infineon_SPD06N80C3_DataSheet_v02_94_EN-3363740.pdf
SPD06N80C3ATMA1
Hersteller: Infineon Technologies
MOSFET LOW POWER_LEGACY
auf Bestellung 33722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.13 EUR
10+ 1.46 EUR
250+ 1.45 EUR
500+ 1.44 EUR
1000+ 1.39 EUR
2500+ 1.38 EUR
SPD06N80C3ATMA1 5257spd06n80c3_rev.2.92.pdffolderiddb3a3043156fd5730115c736bcc70ff2fi.pdf
SPD06N80C3ATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 27500 Stücke:
Lieferzeit 14-21 Tag (e)
SPP06N80C3 description SPP06N80C3.pdf
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.03 EUR
26+ 2.76 EUR
29+ 2.46 EUR
Mindestbestellmenge: 24
SPP06N80C3 description
Hersteller: Infineon
Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPP06N80C3 TSPP06N80C3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.43 EUR
Mindestbestellmenge: 10
SPP06N80C3 description SPP06N80C3.pdf
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.03 EUR
26+ 2.76 EUR
29+ 2.46 EUR
250+ 2 EUR
Mindestbestellmenge: 24
SPP06N80C3 description Infineon_SPP06N80C3_DS_v02_91_en-1732179.pdf
SPP06N80C3
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
auf Bestellung 803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.4 EUR
10+ 2.82 EUR
100+ 2.24 EUR
250+ 2.08 EUR
500+ 1.87 EUR
1000+ 1.61 EUR
2500+ 1.53 EUR
SPP06N80C3XKSA1 Infineon_SPP06N80C3_DS_v02_91_en-1732179.pdf
SPP06N80C3XKSA1
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.78 EUR
10+ 2.08 EUR
100+ 1.88 EUR
500+ 1.7 EUR
1000+ 1.5 EUR
5000+ 1.49 EUR
Mindestbestellmenge: 2
SPP06N80C3XKSA1 Infineon-SPP06N80C3-DS-v02_91-en.pdf?fileId=db3a304340f610c2014101afea0d5580
SPP06N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 4860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.43 EUR
50+ 2.75 EUR
100+ 2.26 EUR
500+ 1.92 EUR
1000+ 1.63 EUR
2000+ 1.54 EUR
Mindestbestellmenge: 6
SPP06N80C3XKSA1 spp06n80c3_rev2.91.pdf
SPP06N80C3XKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 24863 Stücke:
Lieferzeit 14-21 Tag (e)
STB6N80K5 stb6n80k5-1850256.pdf
STB6N80K5
Hersteller: STMicroelectronics
MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET
auf Bestellung 1007 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.29 EUR
10+ 2.73 EUR
100+ 2.18 EUR
250+ 2.01 EUR
500+ 1.83 EUR
1000+ 1.53 EUR
2000+ 1.48 EUR
STB6N80K5 725201003193875dm00085379.pdf
STB6N80K5
Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
STD6N80K5 en.DM00085379.pdf
STD6N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
auf Bestellung 11037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.59 EUR
10+ 2.99 EUR
100+ 2.38 EUR
500+ 2.01 EUR
1000+ 1.71 EUR
Mindestbestellmenge: 5
STD6N80K5 en.DM00085379.pdf
STD6N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.62 EUR
5000+ 1.56 EUR
Mindestbestellmenge: 2500
STD6N80K5 en.DM00085379.pdf
STD6N80K5
Hersteller: STMicroelectronics
MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.57 EUR
10+ 2.97 EUR
100+ 2.38 EUR
250+ 2.36 EUR
500+ 1.99 EUR
1000+ 1.7 EUR
2500+ 1.61 EUR
STF6N80K5 en.DM00085454.pdf
STF6N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.98 EUR
50+ 3.19 EUR
100+ 2.63 EUR
500+ 2.22 EUR
Mindestbestellmenge: 5
STP6N80K5 en.DM00085379.pdf
STP6N80K5
Hersteller: STMicroelectronics
MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.04 EUR
10+ 1.99 EUR
100+ 1.9 EUR
250+ 1.87 EUR
500+ 1.85 EUR
1000+ 1.75 EUR
5000+ 1.69 EUR
Mindestbestellmenge: 2
WMK06N80M3 WMx06N80M3.pdf
WMK06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
63+ 1.14 EUR
79+ 0.91 EUR
144+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 53
WMK06N80M3 WMx06N80M3.pdf
WMK06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
63+ 1.14 EUR
79+ 0.91 EUR
144+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 53
WML06N80M3 WMx06N80M3.pdf
WML06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
96+ 0.75 EUR
108+ 0.66 EUR
114+ 0.63 EUR
120+ 0.6 EUR
Mindestbestellmenge: 72
WML06N80M3 WMx06N80M3.pdf
WML06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 468 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
96+ 0.75 EUR
108+ 0.66 EUR
114+ 0.63 EUR
120+ 0.6 EUR
500+ 0.57 EUR
Mindestbestellmenge: 72
DD106N800K
Hersteller: AEG
05+
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
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