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IRF9610 IRF9610
Produktcode: 174702
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Siliconix irf9610-datasheet.pdf Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200 V
Id,A: 1,8 A
Rds(on),Om: 3,0 Ohm
Ciss, pF/Qg, nC: 170/11
/: THT
auf Bestellung 69 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF IRF9610PBF
Produktcode: 35442
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IR irf9610.pdf Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 1.8
Rds(on),Om: 3.0
Ciss, pF/Qg, nC: 170/11
/: THT
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 12 Stück:
1+0.70 EUR
10+0.57 EUR
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IRF9620 IRF9620
Produktcode: 31591
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IR 91082ferfu0934u9ry43.pdf description Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 3.5
Rds(on),Om: 10
Ciss, pF/Qg, nC: 350/22
/: THT
Produkt ist nicht verfügbar
erwartet: 25 Stück
1+0.47 EUR
10+0.39 EUR
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IRF9630 IRF9630
Produktcode: 67392
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IR 91084y97y789t8t86t.pdf Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200
Id,A: 4
Rds(on),Om: 10
Ciss, pF/Qg, nC: 700/29
/: THT
verfügbar: 12 Stück
1+0.55 EUR
10+0.49 EUR
100+0.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF IRF9630PBF
Produktcode: 98685
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IRF9630%2CSiHF9630.pdf Transistoren > Transistoren P-Kanal-Feld
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640PBF
Produktcode: 123234
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Siliconix sihf9640-datasheet.pdf Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200 V
Id,A: 11 А
Rds(on),Om: 0,05 Ohm
Ciss, pF/Qg, nC: 1200/44
/: THT
auf Bestellung 123 Stück:
Lieferzeit 21-28 Tag (e)
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IRF9640PBF IRF9640PBF
Produktcode: 22646
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IR IRF9640PBF.pdf Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 11
Rds(on),Om: 0.5
Ciss, pF/Qg, nC: 1200/44
/: THT
auf Bestellung 173 Stück:
Lieferzeit 21-28 Tag (e)
1+0.75 EUR
10+0.67 EUR
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RF96 трансивер LoRa SX1276 маркований Hope RF
auf Bestellung 40 Stücke:
Lieferzeit 7-21 Tag (e)
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RF9601CK
auf Bestellung 108 Stücke:
Lieferzeit 21-28 Tag (e)
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RF9640
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
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RF9643
auf Bestellung 348 Stücke:
Lieferzeit 21-28 Tag (e)
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A-RF96ABCR Assmann WSW Components ASS_5680_CO.pdf Description: DIN 41612,F,STYLE R,96,2.54,THT,
Packaging: Tray
Connector Type: Receptacle, Female Sockets
Contact Finish: Gold
Mounting Type: Through Hole, Right Angle
Number of Positions: 96
Pitch: 0.100" (2.54mm)
Style: R
Number of Positions Loaded: All
Termination: Solder
Level, Class: 3
Contact Finish Thickness: FLASH
Number of Rows: 3
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.98 EUR
10+9.34 EUR
30+8.64 EUR
60+8.23 EUR
90+8.00 EUR
Mindestbestellmenge: 2
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DRF960-24-1
+1
DRF960-24-1 TDK-LAMBDA DRF.pdf Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+508.77 EUR
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DRF960-24-1
+1
DRF960-24-1 TDK-LAMBDA DRF.pdf Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
1+508.77 EUR
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DRF960-24-1 DRF960-24-1 TDK-Lambda drf_e.pdf Description: AC/DC DIN RAIL SUPPLY 24V 960W
Power (Watts): 960W
Features: Adjustable Output, Load Sharing, PFC, Remote On/Off, Universal Input
Packaging: Box
Size / Dimension: 5.47" L x 4.33" W x 4.86" H (139.0mm x 110.0mm x 123.4mm)
Operating Temperature: -25°C ~ 70°C (With Derating)
Applications: Industrial, ITE (Commercial)
Input Type: AC
Approval Agency: CE
Efficiency: 95%
Current - Output (Max): 40A
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 3 kV
AC Voltage - Input: 180 ~ 264 VAC
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
1+768.68 EUR
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IRF9610 Siliconix 91080.pdf P-MOSFET 1.8A 200V 20W 3Ω IRF9610 TIRF9610
Anzahl je Verpackung: 10 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.26 EUR
Mindestbestellmenge: 30
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IRF9610 International Rectifier/Infineon 91080.pdf P-канальний ПТ; Udss, В = -200; Id = -1,8; Ptot, Вт = 20; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 170 @ -25; Qg, нКл = 11; Rds = 3 Ом; Tексп, °C = -55...+150; Ugs(th) = -3 В; TO-220
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+6.58 EUR
10+0.96 EUR
100+0.84 EUR
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IRF9610PBF IRF9610PBF VISHAY IRF9610PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
104+0.69 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF IRF9610PBF VISHAY IRF9610PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 384 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
104+0.69 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF IRF9610PBF Vishay Siliconix 91080.pdf Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 3087 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
50+1.66 EUR
100+1.61 EUR
500+1.41 EUR
1000+1.30 EUR
2000+1.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF-BE3 IRF9610PBF-BE3 Vishay Siliconix 91080.pdf Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.52 EUR
50+1.41 EUR
100+1.36 EUR
500+1.23 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610SPBF IRF9610SPBF Vishay Siliconix sihf9610.pdf Description: MOSFET P-CH 200V 1.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.82 EUR
10+2.71 EUR
100+2.01 EUR
500+1.61 EUR
1000+1.46 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620 Siliconix 91082.pdf description Transistor P-Channel MOSFET; 200V; 20V; 1,5Ohm; 3,5A; 40W; -55°C ~ 150°C; IRF9620 TIRF9620
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.61 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF IRF9620PBF VISHAY IRF9620PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
58+1.24 EUR
109+0.66 EUR
117+0.61 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF IRF9620PBF VISHAY IRF9620PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)
47+1.54 EUR
58+1.24 EUR
109+0.66 EUR
117+0.61 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF IRF9620PBF Vishay Siliconix 91082.pdf Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3944 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
50+1.63 EUR
100+1.60 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF-BE3 IRF9620PBF-BE3 Vishay Siliconix 91082.pdf Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
50+1.64 EUR
100+1.47 EUR
500+1.43 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620SPBF IRF9620SPBF Vishay Siliconix sihf9620.pdf Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
10+3.01 EUR
100+2.21 EUR
500+1.93 EUR
1000+1.89 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620STRLPBF IRF9620STRLPBF Vishay Siliconix sihf9620.pdf Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
10+2.69 EUR
100+2.03 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620STRLPBF IRF9620STRLPBF Vishay Siliconix sihf9620.pdf Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.89 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IRF9622 IRF9622 Harris Corporation HRISD017-5-80.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1128 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.74 EUR
Mindestbestellmenge: 683
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IRF9622156 IRF9622156 Harris Corporation HRISD017-5-80.pdf?t.download=true&u=5oefqw Description: 3A, 200V, 2.4OHM, P-CHANNEL, POW
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.74 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630 IRF9630 Harris Corporation HRISD017-5-85.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 16310 Stücke:
Lieferzeit 10-14 Tag (e)
211+2.39 EUR
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IRF9630PBF IRF9630PBF VISHAY IRF9630PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
auf Bestellung 202 Stücke:
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42+1.71 EUR
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87+0.83 EUR
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IRF9630PBF IRF9630PBF VISHAY IRF9630PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
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39+1.84 EUR
42+1.71 EUR
82+0.88 EUR
87+0.83 EUR
1000+0.82 EUR
2000+0.80 EUR
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IRF9630PBF IRF9630PBF Vishay Siliconix IRF9630%2CSiHF9630.pdf Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1288 Stücke:
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IRF9630PBF-BE3 IRF9630PBF-BE3 Vishay Siliconix irf9630.pdf Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1795 Stücke:
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IRF9630S Siliconix IRF9630S_SiHF9630S.pdf P-MOSFET 6.5A 200V IRF9630S IRF9630STRL IRF9630S TIRF9630s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
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IRF9630S IR IRF9630S_SiHF9630S.pdf Силовой МОП-транзистор P-канальный Vси = -100 В, Rоткр = 0.8 Ом, Id(25oC) = -6.5 A Корпус D2-Pak
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IRF9630SPBF IRF9630SPBF VISHAY IRF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
auf Bestellung 367 Stücke:
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23+3.23 EUR
55+1.32 EUR
87+0.83 EUR
91+0.79 EUR
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IRF9630SPBF IRF9630SPBF VISHAY IRF9630S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 367 Stücke:
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23+3.23 EUR
55+1.32 EUR
87+0.83 EUR
91+0.79 EUR
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IRF9630SPBF IRF9630SPBF Vishay Siliconix IRF9630S_SiHF9630S.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 3540 Stücke:
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4+4.73 EUR
50+2.45 EUR
100+2.21 EUR
500+1.98 EUR
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IRF9630STRLPBF IRF9630STRLPBF Vishay Siliconix IRF9630S_SiHF9630S.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 321 Stücke:
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4+5.42 EUR
10+3.86 EUR
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IRF9632 IRF9632 Harris Corporation HRISD017-5-85.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 455 Stücke:
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195+2.59 EUR
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IRF9640 International Rectifier IRF9640_SiHF9640.pdf description P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
auf Bestellung 350 Stücke:
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20+2.10 EUR
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IRF9640 Siliconix IRF9640_SiHF9640.pdf description P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
auf Bestellung 35 Stücke:
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IRF9640PBF IRF9640PBF VISHAY IRF9640PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
auf Bestellung 467 Stücke:
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53+1.37 EUR
100+0.72 EUR
105+0.68 EUR
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IRF9640PBF IRF9640PBF VISHAY IRF9640PBF.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 467 Stücke:
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44+1.63 EUR
53+1.37 EUR
100+0.72 EUR
105+0.68 EUR
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IRF9640PBF IRF9640PBF Vishay Siliconix IRF9640_SiHF9640.pdf Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 22858 Stücke:
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50+1.84 EUR
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IRF9640PBF IR IRF9640_SiHF9640.pdf Транз. Пол. БМ P-HEXFET TO220AB Udss=-200V; Id=-11A; Pdmax=125W; Rds=0,5 Ohm
auf Bestellung 307 Stücke:
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1+5.33 EUR
10+4.72 EUR
100+4.29 EUR
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IRF9640PBF-BE3 IRF9640PBF-BE3 Vishay Siliconix irf9640.pdf Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 133 Stücke:
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5+3.84 EUR
50+2.10 EUR
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IRF9640S Siliconix IRF%28SiHF%299640%28S%2CL%29.pdf description P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
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20+2.41 EUR
Mindestbestellmenge: 20
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IRF9640S Siliconix IRF%28SiHF%299640%28S%2CL%29.pdf description P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
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20+2.41 EUR
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IRF9640S2497 IRF9640S2497 Harris Corporation Description: 11A, 200V, 0.500 OHM, P-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 250 Stücke:
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155+3.27 EUR
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IRF9640SPBF IRF9640SPBF VISHAY IRF9640SPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
auf Bestellung 129 Stücke:
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20+3.69 EUR
35+2.06 EUR
65+1.10 EUR
70+1.03 EUR
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IRF9640SPBF IRF9640SPBF VISHAY IRF9640SPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.69 EUR
35+2.06 EUR
65+1.10 EUR
70+1.03 EUR
Mindestbestellmenge: 20
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IRF9640SPBF IRF9640SPBF Vishay Siliconix IRF%28SiHF%299640%28S%2CL%29.pdf Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1499 Stücke:
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4+4.93 EUR
50+3.13 EUR
100+2.86 EUR
500+2.83 EUR
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IRF9640STRLPBF IRF9640STRLPBF Vishay Siliconix IRF%28SiHF%299640%28S%2CL%29.pdf description Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 3484 Stücke:
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4+4.40 EUR
10+3.13 EUR
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IRF9640STRLPBF IRF9640STRLPBF Vishay Siliconix IRF%28SiHF%299640%28S%2CL%29.pdf description Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.83 EUR
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IRF9640STRRPBF IRF9640STRRPBF Vishay Siliconix IRF%28SiHF%299640%28S%2CL%29.pdf Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 4242 Stücke:
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4+4.95 EUR
10+3.43 EUR
100+3.13 EUR
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IRF9610
Produktcode: 174702
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irf9610-datasheet.pdf
IRF9610
Hersteller: Siliconix
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200 V
Id,A: 1,8 A
Rds(on),Om: 3,0 Ohm
Ciss, pF/Qg, nC: 170/11
/: THT
auf Bestellung 69 Stück:
Lieferzeit 21-28 Tag (e)
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IRF9610PBF
Produktcode: 35442
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irf9610.pdf
IRF9610PBF
Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 1.8
Rds(on),Om: 3.0
Ciss, pF/Qg, nC: 170/11
/: THT
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 12 Stück:
Anzahl Preis
1+0.70 EUR
10+0.57 EUR
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IRF9620
Produktcode: 31591
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description 91082ferfu0934u9ry43.pdf
IRF9620
Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 3.5
Rds(on),Om: 10
Ciss, pF/Qg, nC: 350/22
/: THT
Produkt ist nicht verfügbar
erwartet: 25 Stück
Anzahl Preis
1+0.47 EUR
10+0.39 EUR
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IRF9630
Produktcode: 67392
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91084y97y789t8t86t.pdf
IRF9630
Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200
Id,A: 4
Rds(on),Om: 10
Ciss, pF/Qg, nC: 700/29
/: THT
verfügbar: 12 Stück
Anzahl Preis
1+0.55 EUR
10+0.49 EUR
100+0.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF
Produktcode: 98685
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IRF9630%2CSiHF9630.pdf
IRF9630PBF
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)
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IRF9640PBF
Produktcode: 123234
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sihf9640-datasheet.pdf
IRF9640PBF
Hersteller: Siliconix
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200 V
Id,A: 11 А
Rds(on),Om: 0,05 Ohm
Ciss, pF/Qg, nC: 1200/44
/: THT
auf Bestellung 123 Stück:
Lieferzeit 21-28 Tag (e)
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IRF9640PBF
Produktcode: 22646
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IRF9640PBF.pdf
IRF9640PBF
Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 11
Rds(on),Om: 0.5
Ciss, pF/Qg, nC: 1200/44
/: THT
auf Bestellung 173 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+0.75 EUR
10+0.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RF96
трансивер LoRa SX1276 маркований Hope RF
auf Bestellung 40 Stücke:
Lieferzeit 7-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RF9601CK
auf Bestellung 108 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RF9640
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RF9643
auf Bestellung 348 Stücke:
Lieferzeit 21-28 Tag (e)
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A-RF96ABCR ASS_5680_CO.pdf
Hersteller: Assmann WSW Components
Description: DIN 41612,F,STYLE R,96,2.54,THT,
Packaging: Tray
Connector Type: Receptacle, Female Sockets
Contact Finish: Gold
Mounting Type: Through Hole, Right Angle
Number of Positions: 96
Pitch: 0.100" (2.54mm)
Style: R
Number of Positions Loaded: All
Termination: Solder
Level, Class: 3
Contact Finish Thickness: FLASH
Number of Rows: 3
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
10+9.34 EUR
30+8.64 EUR
60+8.23 EUR
90+8.00 EUR
Mindestbestellmenge: 2
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DRF960-24-1 DRF.pdf
Hersteller: TDK-LAMBDA
Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+508.77 EUR
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DRF960-24-1 DRF.pdf
Hersteller: TDK-LAMBDA
Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+508.77 EUR
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DRF960-24-1 drf_e.pdf
DRF960-24-1
Hersteller: TDK-Lambda
Description: AC/DC DIN RAIL SUPPLY 24V 960W
Power (Watts): 960W
Features: Adjustable Output, Load Sharing, PFC, Remote On/Off, Universal Input
Packaging: Box
Size / Dimension: 5.47" L x 4.33" W x 4.86" H (139.0mm x 110.0mm x 123.4mm)
Operating Temperature: -25°C ~ 70°C (With Derating)
Applications: Industrial, ITE (Commercial)
Input Type: AC
Approval Agency: CE
Efficiency: 95%
Current - Output (Max): 40A
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 3 kV
AC Voltage - Input: 180 ~ 264 VAC
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+768.68 EUR
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IRF9610 91080.pdf
Hersteller: Siliconix
P-MOSFET 1.8A 200V 20W 3Ω IRF9610 TIRF9610
Anzahl je Verpackung: 10 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+1.26 EUR
Mindestbestellmenge: 30
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IRF9610 91080.pdf
Hersteller: International Rectifier/Infineon
P-канальний ПТ; Udss, В = -200; Id = -1,8; Ptot, Вт = 20; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 170 @ -25; Qg, нКл = 11; Rds = 3 Ом; Tексп, °C = -55...+150; Ugs(th) = -3 В; TO-220
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+6.58 EUR
10+0.96 EUR
100+0.84 EUR
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IRF9610PBF IRF9610PBF.pdf
IRF9610PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
104+0.69 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF IRF9610PBF.pdf
IRF9610PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 384 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
71+1.02 EUR
104+0.69 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF 91080.pdf
IRF9610PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 3087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
50+1.66 EUR
100+1.61 EUR
500+1.41 EUR
1000+1.30 EUR
2000+1.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610PBF-BE3 91080.pdf
IRF9610PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
50+1.41 EUR
100+1.36 EUR
500+1.23 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9610SPBF sihf9610.pdf
IRF9610SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
10+2.71 EUR
100+2.01 EUR
500+1.61 EUR
1000+1.46 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620 description 91082.pdf
Hersteller: Siliconix
Transistor P-Channel MOSFET; 200V; 20V; 1,5Ohm; 3,5A; 40W; -55°C ~ 150°C; IRF9620 TIRF9620
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.61 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF IRF9620PBF.pdf
IRF9620PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
58+1.24 EUR
109+0.66 EUR
117+0.61 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF IRF9620PBF.pdf
IRF9620PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
47+1.54 EUR
58+1.24 EUR
109+0.66 EUR
117+0.61 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF 91082.pdf
IRF9620PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
50+1.63 EUR
100+1.60 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620PBF-BE3 91082.pdf
IRF9620PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
50+1.64 EUR
100+1.47 EUR
500+1.43 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620SPBF sihf9620.pdf
IRF9620SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+3.01 EUR
100+2.21 EUR
500+1.93 EUR
1000+1.89 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620STRLPBF sihf9620.pdf
IRF9620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+2.69 EUR
100+2.03 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9620STRLPBF sihf9620.pdf
IRF9620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.89 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IRF9622 HRISD017-5-80.pdf?t.download=true&u=5oefqw
IRF9622
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
683+0.74 EUR
Mindestbestellmenge: 683
Im Einkaufswagen  Stück im Wert von  UAH
IRF9622156 HRISD017-5-80.pdf?t.download=true&u=5oefqw
IRF9622156
Hersteller: Harris Corporation
Description: 3A, 200V, 2.4OHM, P-CHANNEL, POW
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.74 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630 HRISD017-5-85.pdf?t.download=true&u=5oefqw
IRF9630
Hersteller: Harris Corporation
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 16310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
211+2.39 EUR
Mindestbestellmenge: 211
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IRF9630PBF IRF9630PBF.pdf
IRF9630PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
42+1.71 EUR
82+0.88 EUR
87+0.83 EUR
Mindestbestellmenge: 39
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IRF9630PBF IRF9630PBF.pdf
IRF9630PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
39+1.84 EUR
42+1.71 EUR
82+0.88 EUR
87+0.83 EUR
1000+0.82 EUR
2000+0.80 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF IRF9630%2CSiHF9630.pdf
IRF9630PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
50+1.84 EUR
100+1.82 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630PBF-BE3 irf9630.pdf
IRF9630PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
50+1.84 EUR
100+1.82 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630S IRF9630S_SiHF9630S.pdf
Hersteller: Siliconix
P-MOSFET 6.5A 200V IRF9630S IRF9630STRL IRF9630S TIRF9630s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.30 EUR
Mindestbestellmenge: 20
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IRF9630S IRF9630S_SiHF9630S.pdf
Hersteller: IR
Силовой МОП-транзистор P-канальный Vси = -100 В, Rоткр = 0.8 Ом, Id(25oC) = -6.5 A Корпус D2-Pak
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+2.73 EUR
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IRF9630SPBF IRF9630S.pdf
IRF9630SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
55+1.32 EUR
87+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630SPBF IRF9630S.pdf
IRF9630SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 367 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.23 EUR
55+1.32 EUR
87+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630SPBF IRF9630S_SiHF9630S.pdf
IRF9630SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 3540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
50+2.45 EUR
100+2.21 EUR
500+1.98 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF9630STRLPBF IRF9630S_SiHF9630S.pdf
IRF9630STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
10+3.86 EUR
100+2.77 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF9632 HRISD017-5-85.pdf?t.download=true&u=5oefqw
IRF9632
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
195+2.59 EUR
Mindestbestellmenge: 195
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640 description IRF9640_SiHF9640.pdf
Hersteller: International Rectifier
P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.10 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640 description IRF9640_SiHF9640.pdf
Hersteller: Siliconix
P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.10 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640PBF.pdf
IRF9640PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
53+1.37 EUR
100+0.72 EUR
105+0.68 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640PBF.pdf
IRF9640PBF
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 467 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.63 EUR
53+1.37 EUR
100+0.72 EUR
105+0.68 EUR
1000+0.66 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640_SiHF9640.pdf
IRF9640PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 22858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
50+1.84 EUR
100+1.75 EUR
500+1.57 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF IRF9640_SiHF9640.pdf
Hersteller: IR
Транз. Пол. БМ P-HEXFET TO220AB Udss=-200V; Id=-11A; Pdmax=125W; Rds=0,5 Ohm
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+5.33 EUR
10+4.72 EUR
100+4.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640PBF-BE3 irf9640.pdf
IRF9640PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
50+2.10 EUR
100+1.95 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640S description IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: Siliconix
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.41 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640S description IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: Siliconix
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.41 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640S2497
IRF9640S2497
Hersteller: Harris Corporation
Description: 11A, 200V, 0.500 OHM, P-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
155+3.27 EUR
Mindestbestellmenge: 155
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640SPBF IRF9640SPBF.pdf
IRF9640SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
35+2.06 EUR
65+1.10 EUR
70+1.03 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640SPBF IRF9640SPBF.pdf
IRF9640SPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.69 EUR
35+2.06 EUR
65+1.10 EUR
70+1.03 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640SPBF IRF%28SiHF%299640%28S%2CL%29.pdf
IRF9640SPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
50+3.13 EUR
100+2.86 EUR
500+2.83 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640STRLPBF description IRF%28SiHF%299640%28S%2CL%29.pdf
IRF9640STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.40 EUR
10+3.13 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF9640STRLPBF description IRF%28SiHF%299640%28S%2CL%29.pdf
IRF9640STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.83 EUR
Mindestbestellmenge: 800
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IRF9640STRRPBF IRF%28SiHF%299640%28S%2CL%29.pdf
IRF9640STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 4242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.95 EUR
10+3.43 EUR
100+3.13 EUR
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