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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRF9610 Produktcode: 174702
zu Favoriten hinzufügen
Lieblingsprodukt
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Siliconix |
![]() Gehäuse: TO-220 Uds,V: 200 V Id,A: 1,8 A Rds(on),Om: 3,0 Ohm Ciss, pF/Qg, nC: 170/11 /: THT |
auf Bestellung 69 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF9610PBF Produktcode: 35442
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() Gehäuse: TO-220 Uds,V: 200 Id,A: 1.8 Rds(on),Om: 3.0 Ciss, pF/Qg, nC: 170/11 /: THT |
auf Bestellung 4 Stück: Lieferzeit 21-28 Tag (e)erwartet 12 Stück: |
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IRF9620 Produktcode: 31591
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() ![]() Gehäuse: TO-220 Uds,V: 200 Id,A: 3.5 Rds(on),Om: 10 Ciss, pF/Qg, nC: 350/22 /: THT |
Produkt ist nicht verfügbar
erwartet:
25 Stück
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IRF9630 Produktcode: 67392
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() Gehäuse: TO-220AB Uds,V: 200 Id,A: 4 Rds(on),Om: 10 Ciss, pF/Qg, nC: 700/29 /: THT |
verfügbar: 12 Stück
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IRF9630PBF Produktcode: 98685
zu Favoriten hinzufügen
Lieblingsprodukt
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auf Bestellung 4 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRF9640PBF Produktcode: 123234
zu Favoriten hinzufügen
Lieblingsprodukt
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Siliconix |
![]() Gehäuse: TO-220AB Uds,V: 200 V Id,A: 11 А Rds(on),Om: 0,05 Ohm Ciss, pF/Qg, nC: 1200/44 /: THT |
auf Bestellung 123 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF9640PBF Produktcode: 22646
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() Gehäuse: TO-220 Uds,V: 200 Id,A: 11 Rds(on),Om: 0.5 Ciss, pF/Qg, nC: 1200/44 /: THT |
auf Bestellung 173 Stück: Lieferzeit 21-28 Tag (e) |
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RF96 | трансивер LoRa SX1276 маркований Hope RF |
auf Bestellung 40 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
RF9601CK |
auf Bestellung 108 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RF9640 |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RF9643 |
auf Bestellung 348 Stücke: Lieferzeit 21-28 Tag (e) |
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A-RF96ABCR | Assmann WSW Components |
![]() Packaging: Tray Connector Type: Receptacle, Female Sockets Contact Finish: Gold Mounting Type: Through Hole, Right Angle Number of Positions: 96 Pitch: 0.100" (2.54mm) Style: R Number of Positions Loaded: All Termination: Solder Level, Class: 3 Contact Finish Thickness: FLASH Number of Rows: 3 |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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DRF960-24-1 | TDK-LAMBDA |
![]() Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C Mounting: for DIN rail mounting Supply voltage: 180...264V AC Operating temperature: -25...70°C Additional functions: adjustable output voltage Protection: anti-overvoltage OVP; over current OCP; overheating OTP Manufacturer series: DRF Kind of power supply: for DIN rail Efficiency: 95% Electrical connection: terminal block Power: 960W Body dimensions: 110x123.4x139mm Output voltage: 24V DC Output current: 40A Indication: LED Type of power supply: switching |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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DRF960-24-1 | TDK-LAMBDA |
![]() Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C Mounting: for DIN rail mounting Supply voltage: 180...264V AC Operating temperature: -25...70°C Additional functions: adjustable output voltage Protection: anti-overvoltage OVP; over current OCP; overheating OTP Manufacturer series: DRF Kind of power supply: for DIN rail Efficiency: 95% Electrical connection: terminal block Power: 960W Body dimensions: 110x123.4x139mm Output voltage: 24V DC Output current: 40A Indication: LED Type of power supply: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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DRF960-24-1 | TDK-Lambda |
![]() Power (Watts): 960W Features: Adjustable Output, Load Sharing, PFC, Remote On/Off, Universal Input Packaging: Box Size / Dimension: 5.47" L x 4.33" W x 4.86" H (139.0mm x 110.0mm x 123.4mm) Operating Temperature: -25°C ~ 70°C (With Derating) Applications: Industrial, ITE (Commercial) Input Type: AC Approval Agency: CE Efficiency: 95% Current - Output (Max): 40A Voltage - Output 1: 24V Part Status: Active Number of Outputs: 1 Voltage - Isolation: 3 kV AC Voltage - Input: 180 ~ 264 VAC |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9610 | Siliconix |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9610 | International Rectifier/Infineon |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9610PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Power dissipation: 20W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9610PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Power dissipation: 20W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 384 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9610PBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 3087 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9610PBF-BE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9610SPBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 1082 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9620 | Siliconix |
![]() ![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9620PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9620PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9620PBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 3944 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9620PBF-BE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 762 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9620SPBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9620STRLPBF | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 1598 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9620STRLPBF | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9622 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 1128 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9622156 | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9630 | Harris Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 16310 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9630PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement Gate charge: 29nC Kind of package: tube |
auf Bestellung 202 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement Gate charge: 29nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 202 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9630PBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 1288 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9630PBF-BE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 1795 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9630S | Siliconix |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9630S | IR |
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auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 29nC Kind of package: tube |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 29nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 367 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9630SPBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 3540 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9630STRLPBF | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 321 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9632 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640 | International Rectifier |
![]() ![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640 | Siliconix |
![]() ![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube |
auf Bestellung 467 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 467 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640PBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 22858 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640PBF | IR |
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auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640PBF-BE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640S | Siliconix |
![]() ![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640S | Siliconix |
![]() ![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640S2497 | Harris Corporation |
Description: 11A, 200V, 0.500 OHM, P-CHANNEL Packaging: Bulk Part Status: Active |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Kind of channel: enhancement Gate charge: 44nC |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Kind of channel: enhancement Gate charge: 44nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 129 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9640SPBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640STRLPBF | Vishay Siliconix |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 3484 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640STRLPBF | Vishay Siliconix |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640STRRPBF | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 4242 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9610 Produktcode: 174702
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: Siliconix
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200 V
Id,A: 1,8 A
Rds(on),Om: 3,0 Ohm
Ciss, pF/Qg, nC: 170/11
/: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200 V
Id,A: 1,8 A
Rds(on),Om: 3,0 Ohm
Ciss, pF/Qg, nC: 170/11
/: THT
auf Bestellung 69 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF9610PBF Produktcode: 35442
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 1.8
Rds(on),Om: 3.0
Ciss, pF/Qg, nC: 170/11
/: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 1.8
Rds(on),Om: 3.0
Ciss, pF/Qg, nC: 170/11
/: THT
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)erwartet 12 Stück:
Anzahl | Preis |
---|---|
1+ | 0.70 EUR |
10+ | 0.57 EUR |
IRF9620 Produktcode: 31591
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 3.5
Rds(on),Om: 10
Ciss, pF/Qg, nC: 350/22
/: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 3.5
Rds(on),Om: 10
Ciss, pF/Qg, nC: 350/22
/: THT
Produkt ist nicht verfügbar
erwartet:
25 Stück
Anzahl | Preis |
---|---|
1+ | 0.47 EUR |
10+ | 0.39 EUR |
IRF9630 Produktcode: 67392
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200
Id,A: 4
Rds(on),Om: 10
Ciss, pF/Qg, nC: 700/29
/: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200
Id,A: 4
Rds(on),Om: 10
Ciss, pF/Qg, nC: 700/29
/: THT
verfügbar: 12 Stück
Anzahl | Preis |
---|---|
1+ | 0.55 EUR |
10+ | 0.49 EUR |
100+ | 0.42 EUR |
IRF9630PBF Produktcode: 98685
zu Favoriten hinzufügen
Lieblingsprodukt
|
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auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF9640PBF Produktcode: 123234
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Siliconix
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200 V
Id,A: 11 А
Rds(on),Om: 0,05 Ohm
Ciss, pF/Qg, nC: 1200/44
/: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220AB
Uds,V: 200 V
Id,A: 11 А
Rds(on),Om: 0,05 Ohm
Ciss, pF/Qg, nC: 1200/44
/: THT
auf Bestellung 123 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRF9640PBF Produktcode: 22646
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 11
Rds(on),Om: 0.5
Ciss, pF/Qg, nC: 1200/44
/: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 200
Id,A: 11
Rds(on),Om: 0.5
Ciss, pF/Qg, nC: 1200/44
/: THT
auf Bestellung 173 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
---|---|
1+ | 0.75 EUR |
10+ | 0.67 EUR |
RF96 |
трансивер LoRa SX1276 маркований Hope RF
auf Bestellung 40 Stücke:
Lieferzeit 7-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
A-RF96ABCR |
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Hersteller: Assmann WSW Components
Description: DIN 41612,F,STYLE R,96,2.54,THT,
Packaging: Tray
Connector Type: Receptacle, Female Sockets
Contact Finish: Gold
Mounting Type: Through Hole, Right Angle
Number of Positions: 96
Pitch: 0.100" (2.54mm)
Style: R
Number of Positions Loaded: All
Termination: Solder
Level, Class: 3
Contact Finish Thickness: FLASH
Number of Rows: 3
Description: DIN 41612,F,STYLE R,96,2.54,THT,
Packaging: Tray
Connector Type: Receptacle, Female Sockets
Contact Finish: Gold
Mounting Type: Through Hole, Right Angle
Number of Positions: 96
Pitch: 0.100" (2.54mm)
Style: R
Number of Positions Loaded: All
Termination: Solder
Level, Class: 3
Contact Finish Thickness: FLASH
Number of Rows: 3
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.98 EUR |
10+ | 9.34 EUR |
30+ | 8.64 EUR |
60+ | 8.23 EUR |
90+ | 8.00 EUR |
DRF960-24-1 |
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Hersteller: TDK-LAMBDA
Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 508.77 EUR |
DRF960-24-1 |
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Hersteller: TDK-LAMBDA
Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
Anzahl je Verpackung: 1 Stücke
Category: Din Rail Mounting Power Supplies
Description: Power supply: switching; for DIN rail; 960W; 24VDC; 40A; -25÷70°C
Mounting: for DIN rail mounting
Supply voltage: 180...264V AC
Operating temperature: -25...70°C
Additional functions: adjustable output voltage
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Manufacturer series: DRF
Kind of power supply: for DIN rail
Efficiency: 95%
Electrical connection: terminal block
Power: 960W
Body dimensions: 110x123.4x139mm
Output voltage: 24V DC
Output current: 40A
Indication: LED
Type of power supply: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 508.77 EUR |
DRF960-24-1 |
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Hersteller: TDK-Lambda
Description: AC/DC DIN RAIL SUPPLY 24V 960W
Power (Watts): 960W
Features: Adjustable Output, Load Sharing, PFC, Remote On/Off, Universal Input
Packaging: Box
Size / Dimension: 5.47" L x 4.33" W x 4.86" H (139.0mm x 110.0mm x 123.4mm)
Operating Temperature: -25°C ~ 70°C (With Derating)
Applications: Industrial, ITE (Commercial)
Input Type: AC
Approval Agency: CE
Efficiency: 95%
Current - Output (Max): 40A
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 3 kV
AC Voltage - Input: 180 ~ 264 VAC
Description: AC/DC DIN RAIL SUPPLY 24V 960W
Power (Watts): 960W
Features: Adjustable Output, Load Sharing, PFC, Remote On/Off, Universal Input
Packaging: Box
Size / Dimension: 5.47" L x 4.33" W x 4.86" H (139.0mm x 110.0mm x 123.4mm)
Operating Temperature: -25°C ~ 70°C (With Derating)
Applications: Industrial, ITE (Commercial)
Input Type: AC
Approval Agency: CE
Efficiency: 95%
Current - Output (Max): 40A
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 3 kV
AC Voltage - Input: 180 ~ 264 VAC
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 768.68 EUR |
IRF9610 |
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auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 1.26 EUR |
IRF9610 |
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Hersteller: International Rectifier/Infineon
P-канальний ПТ; Udss, В = -200; Id = -1,8; Ptot, Вт = 20; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 170 @ -25; Qg, нКл = 11; Rds = 3 Ом; Tексп, °C = -55...+150; Ugs(th) = -3 В; TO-220
P-канальний ПТ; Udss, В = -200; Id = -1,8; Ptot, Вт = 20; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 170 @ -25; Qg, нКл = 11; Rds = 3 Ом; Tексп, °C = -55...+150; Ugs(th) = -3 В; TO-220
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.58 EUR |
10+ | 0.96 EUR |
100+ | 0.84 EUR |
IRF9610PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
104+ | 0.69 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
IRF9610PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; 20W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Power dissipation: 20W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 384 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
104+ | 0.69 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
IRF9610PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 3087 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.89 EUR |
50+ | 1.66 EUR |
100+ | 1.61 EUR |
500+ | 1.41 EUR |
1000+ | 1.30 EUR |
2000+ | 1.21 EUR |
IRF9610PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET P-CH 200V 1.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.52 EUR |
50+ | 1.41 EUR |
100+ | 1.36 EUR |
500+ | 1.23 EUR |
IRF9610SPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET P-CH 200V 1.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.82 EUR |
10+ | 2.71 EUR |
100+ | 2.01 EUR |
500+ | 1.61 EUR |
1000+ | 1.46 EUR |
IRF9620 | ![]() |
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Hersteller: Siliconix
Transistor P-Channel MOSFET; 200V; 20V; 1,5Ohm; 3,5A; 40W; -55°C ~ 150°C; IRF9620 TIRF9620
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 200V; 20V; 1,5Ohm; 3,5A; 40W; -55°C ~ 150°C; IRF9620 TIRF9620
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 1.61 EUR |
IRF9620PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
58+ | 1.24 EUR |
109+ | 0.66 EUR |
117+ | 0.61 EUR |
IRF9620PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
58+ | 1.24 EUR |
109+ | 0.66 EUR |
117+ | 0.61 EUR |
IRF9620PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3944 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.68 EUR |
50+ | 1.63 EUR |
100+ | 1.60 EUR |
IRF9620PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 200V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.24 EUR |
50+ | 1.64 EUR |
100+ | 1.47 EUR |
500+ | 1.43 EUR |
IRF9620SPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.78 EUR |
10+ | 3.01 EUR |
100+ | 2.21 EUR |
500+ | 1.93 EUR |
1000+ | 1.89 EUR |
IRF9620STRLPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.33 EUR |
10+ | 2.69 EUR |
100+ | 2.03 EUR |
IRF9620STRLPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.89 EUR |
IRF9622 |
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Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1128 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
683+ | 0.74 EUR |
IRF9622156 |
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Hersteller: Harris Corporation
Description: 3A, 200V, 2.4OHM, P-CHANNEL, POW
Packaging: Bulk
Part Status: Active
Description: 3A, 200V, 2.4OHM, P-CHANNEL, POW
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 0.74 EUR |
IRF9630 |
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Hersteller: Harris Corporation
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 16310 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
211+ | 2.39 EUR |
IRF9630PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
42+ | 1.71 EUR |
82+ | 0.88 EUR |
87+ | 0.83 EUR |
IRF9630PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
42+ | 1.71 EUR |
82+ | 0.88 EUR |
87+ | 0.83 EUR |
1000+ | 0.82 EUR |
2000+ | 0.80 EUR |
IRF9630PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.34 EUR |
50+ | 1.84 EUR |
100+ | 1.82 EUR |
IRF9630PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1795 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.39 EUR |
50+ | 1.84 EUR |
100+ | 1.82 EUR |
IRF9630S |
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Hersteller: Siliconix
P-MOSFET 6.5A 200V IRF9630S IRF9630STRL IRF9630S TIRF9630s
Anzahl je Verpackung: 10 Stücke
P-MOSFET 6.5A 200V IRF9630S IRF9630STRL IRF9630S TIRF9630s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.30 EUR |
IRF9630S |
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Hersteller: IR
Силовой МОП-транзистор P-канальный Vси = -100 В, Rоткр = 0.8 Ом, Id(25oC) = -6.5 A Корпус D2-Pak
Силовой МОП-транзистор P-канальный Vси = -100 В, Rоткр = 0.8 Ом, Id(25oC) = -6.5 A Корпус D2-Pak
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 2.73 EUR |
IRF9630SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
55+ | 1.32 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
IRF9630SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 29nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 367 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
55+ | 1.32 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
IRF9630SPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 3540 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.73 EUR |
50+ | 2.45 EUR |
100+ | 2.21 EUR |
500+ | 1.98 EUR |
IRF9630STRLPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.42 EUR |
10+ | 3.86 EUR |
100+ | 2.77 EUR |
IRF9632 |
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Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
195+ | 2.59 EUR |
IRF9640 | ![]() |
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Hersteller: International Rectifier
P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.10 EUR |
IRF9640 | ![]() |
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Hersteller: Siliconix
P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
P-MOSFET 11A 200V 125W 0.5Ω IRF9640 TIRF9640
Anzahl je Verpackung: 10 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.10 EUR |
IRF9640PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
53+ | 1.37 EUR |
100+ | 0.72 EUR |
105+ | 0.68 EUR |
IRF9640PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 467 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
53+ | 1.37 EUR |
100+ | 0.72 EUR |
105+ | 0.68 EUR |
1000+ | 0.66 EUR |
IRF9640PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 22858 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.06 EUR |
50+ | 1.84 EUR |
100+ | 1.75 EUR |
500+ | 1.57 EUR |
IRF9640PBF |
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Hersteller: IR
Транз. Пол. БМ P-HEXFET TO220AB Udss=-200V; Id=-11A; Pdmax=125W; Rds=0,5 Ohm
Транз. Пол. БМ P-HEXFET TO220AB Udss=-200V; Id=-11A; Pdmax=125W; Rds=0,5 Ohm
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 5.33 EUR |
10+ | 4.72 EUR |
100+ | 4.29 EUR |
IRF9640PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.84 EUR |
50+ | 2.10 EUR |
100+ | 1.95 EUR |
IRF9640S | ![]() |
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Hersteller: Siliconix
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.41 EUR |
IRF9640S | ![]() |
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Hersteller: Siliconix
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
P-MOSFET 11A 200V 125W 0.5Ω IRF9640S IRF9640STRL IRF9640STRR IRF9640S TIRF9640s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.41 EUR |
IRF9640S2497 |
Hersteller: Harris Corporation
Description: 11A, 200V, 0.500 OHM, P-CHANNEL
Packaging: Bulk
Part Status: Active
Description: 11A, 200V, 0.500 OHM, P-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
155+ | 3.27 EUR |
IRF9640SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.69 EUR |
35+ | 2.06 EUR |
65+ | 1.10 EUR |
70+ | 1.03 EUR |
IRF9640SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; 125W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.69 EUR |
35+ | 2.06 EUR |
65+ | 1.10 EUR |
70+ | 1.03 EUR |
IRF9640SPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.93 EUR |
50+ | 3.13 EUR |
100+ | 2.86 EUR |
500+ | 2.83 EUR |
IRF9640STRLPBF | ![]() |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 3484 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.40 EUR |
10+ | 3.13 EUR |
IRF9640STRLPBF | ![]() |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 2.83 EUR |
IRF9640STRRPBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 4242 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.95 EUR |
10+ | 3.43 EUR |
100+ | 3.13 EUR |
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