Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (162377) > Seite 2662 nach 2707
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| TSC211ICT | STMicroelectronics |
 Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 8kHz; Ch: 1; SC70-5; reel,tape Case: SC70-5 Mounting: SMT Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 35µA Voltage supply range: 2.7...26V DC Type of integrated circuit: instrumentation amplifier Number of channels: 1 Bandwidth: 8kHz Slew rate: 75mV/μs Kind of integrated circuit: current sense Input offset current: 20nA |
Produkt ist nicht verfügbar |
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| TSC211IYCT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 8kHz; Ch: 1; SC70-6; Iquiesc: 115uA Case: SC70-6 Mounting: SMT Operating temperature: -40...125°C Application: automotive industry Input bias current: 35µA Voltage supply range: 2.7...26V DC Type of integrated circuit: instrumentation amplifier Number of channels: 1 Bandwidth: 8kHz Quiescent current: 115µA Input offset voltage: 4.5mV Slew rate: 75mV/μs Kind of integrated circuit: current sense Input offset current: 20nA |
Produkt ist nicht verfügbar |
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| STGF10NC60KD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| STGB10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STM32L452RET6P | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; 512kBFLASH Type of integrated circuit: ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 1 |
Produkt ist nicht verfügbar |
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| STM32L452RET6TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; 512kBFLASH Type of integrated circuit: ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 1 |
Produkt ist nicht verfügbar |
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| STGD5H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 83W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 83W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGD10HF60KD | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62.5W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: ignition systems |
Produkt ist nicht verfügbar |
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| STGD19N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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| STGD20N40LZ | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems |
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| STGD20N45LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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| STGD25N36LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 350V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 350V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 25.7nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems |
Produkt ist nicht verfügbar |
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| STGD25N40LZAG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 150W Case: DPAK Pulsed collector current: 50A Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems |
Produkt ist nicht verfügbar |
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| STGD3HF60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4.5A Power dissipation: 38W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGD3NB60SDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 3A; 48W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3A Power dissipation: 48W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 25A Mounting: SMD Gate charge: 18nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STGD4H60DF | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGD4M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 68W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGD6M65DF2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGD6NC60H-1 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 62.5W Case: IPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Kind of package: tube |
Produkt ist nicht verfügbar |
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STGD7NB60ST4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 7A; 55W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 55W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 33nC Kind of package: reel; tape |
auf Bestellung 2464 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGD7NC60HT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 14A; 70W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 14A Power dissipation: 70W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: SMD Gate charge: 35nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STGD8NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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NUCLEO-L4R5ZI | STMicroelectronics |
Category: STM development kits Description: Dev.kit: STM32; base board; Comp: STM32L4R5ZIT6 Type of development kit: STM32 Kit contents: base board Components: STM32L4R5ZIT6 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kind of connector: Morpho plug; pin strips; pin strips; USB B micro |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T68A | STMicroelectronics |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 4812 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T68AY | STMicroelectronics |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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| VND5E160AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuits Description: IC: power switch; high-side; 10A; PowerSSO12; 4.5÷28V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Mounting: SMD Supply voltage: 4.5...28V Number of channels: 2 Case: PowerSSO12 Kind of package: reel; tape On-state resistance: 0.16Ω |
Produkt ist nicht verfügbar |
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| VND5E160JTR-E | STMicroelectronics |
Category: Drivers - integrated circuits Description: IC: power switch; high-side; 10A; PowerSSO12; 4.5÷28V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Mounting: SMD Supply voltage: 4.5...28V Number of channels: 2 Case: PowerSSO12 Kind of package: reel; tape On-state resistance: 0.16Ω |
Produkt ist nicht verfügbar |
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| STGW40NC60KD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 38A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 220A Mounting: THT Gate charge: 135nC Kind of package: tube |
Produkt ist nicht verfügbar |
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LMV824AIDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.9V/μs Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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LMV824AIPT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14 Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 1.9V/μs Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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LMV824AIYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.9V/μs Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Application: automotive industry Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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LMV824AIYPT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14 Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 1.9V/μs Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Application: automotive industry Operating voltage: 2.5...5.5V |
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LMV824IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Open-loop gain: 100dB Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.7V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Operating voltage: 2.5...5.5V |
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LMV824IPT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14 Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 1.9V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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LMV824IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.9V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.18µA Input offset current: 50nA Application: automotive industry Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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STPS80150CW | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 40Ax2; TO247; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 40A x2 Semiconductor structure: common cathode; double Case: TO247 Kind of package: tube Max. forward impulse current: 0.5kA Max. forward voltage: 0.68V |
Produkt ist nicht verfügbar |
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| STPS8H100DEE-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 8A; PowerFLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 8A Max. load current: 15A Semiconductor structure: single diode Case: PowerFLAT Max. forward voltage: 0.9V Max. forward impulse current: 100A Leakage current: 6mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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STPS8H100FP | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220FP-2; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Max. load current: 30A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 250A Max. forward voltage: 0.56V |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS8L30B-TR | STMicroelectronics |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 30V; 8A; DPAK; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: DPAK Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.35V Max. off-state voltage: 30V Load current: 8A |
auf Bestellung 9001 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPS8L30BY-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 8A; DPAK; reel,tape Application: automotive industry Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 40mA Case: DPAK Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.63V Max. off-state voltage: 30V Load current: 8A |
Produkt ist nicht verfügbar |
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| STPS8L30DEE-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 8A; PowerFLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 8A Max. load current: 15A Semiconductor structure: single diode Case: PowerFLAT Max. forward voltage: 0.57V Max. forward impulse current: 100A Leakage current: 140mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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STPSC8H065G | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; D2PAK; tube Mounting: SMD Max. load current: 33A Kind of package: tube Semiconductor structure: single diode Case: D2PAK Type of diode: Schottky rectifying Max. forward impulse current: 420A Max. forward voltage: 2.5V Technology: SiC Max. off-state voltage: 650V Load current: 8A |
Produkt ist nicht verfügbar |
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| STPSC8H065G-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape Mounting: SMD Max. load current: 33A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 335µA Case: D2PAK Type of diode: Schottky rectifying Max. forward impulse current: 420A Max. forward voltage: 2.5V Max. off-state voltage: 650V Load current: 8A |
Produkt ist nicht verfügbar |
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| STPSC8H065G2Y-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape Application: automotive industry Mounting: SMD Max. load current: 33A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 335µA Case: D2PAK Type of diode: Schottky rectifying Max. forward impulse current: 420A Max. forward voltage: 2.05V Max. off-state voltage: 650V Load current: 8A |
Produkt ist nicht verfügbar |
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STPSC8TH13TI | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO220AB; tube Mounting: THT Max. load current: 33A Kind of package: tube Semiconductor structure: double series Case: TO220AB Type of diode: Schottky rectifying Max. forward impulse current: 69A Max. forward voltage: 1.98V Technology: SiC Max. off-state voltage: 650V Heatsink thickness: 1.23...1.32mm Load current: 8A x2 |
Produkt ist nicht verfügbar |
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STPS30M80CT | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 15Ax2; TO220AB; tube Mounting: THT Max. load current: 30A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying Max. forward impulse current: 220A Max. forward voltage: 0.49V Max. off-state voltage: 80V Heatsink thickness: 1.23...1.32mm Load current: 15A x2 |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS30SM80CFP | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 15Ax2; TO220FP; tube; Ir: 20mA Mounting: THT Max. load current: 30A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 20mA Case: TO220FP Type of diode: Schottky rectifying Max. forward impulse current: 220A Max. forward voltage: 0.965V Max. off-state voltage: 80V Load current: 15A x2 |
Produkt ist nicht verfügbar |
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| STGWA60V60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGWT60V60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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STTH1R02Q | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1.5A; Ammo Pack; Ifsm: 60A; DO15; 15ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO15 Max. forward voltage: 0.7V Max. forward impulse current: 60A Kind of package: Ammo Pack |
auf Bestellung 1587 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH1R02QRL | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1.5A; reel; Ifsm: 60A; DO15; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO15 Max. forward voltage: 1V Max. forward impulse current: 60A Leakage current: 20µA Kind of package: reel |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH1R02RL | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1.5A; reel,tape; Ifsm: 60A; DO41; 15ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1.5A Max. load current: 30A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO41 Max. forward voltage: 0.7V Max. forward impulse current: 60A Kind of package: reel; tape |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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STSPIN220 | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10V Type of integrated circuit: driver Output current: 1.3A Case: VFQFPN16 Mounting: SMD Kind of integrated circuit: stepper motor controller Operating temperature: -40...150°C Kind of package: in-tray On-state resistance: 0.4Ω Operating voltage: 1.8...10V |
auf Bestellung 886 Stücke: Lieferzeit 14-21 Tag (e) |
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| STM1816SWX7F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC Case: SOT23-3 Threshold on-voltage: 2.88V Mounting: SMD Operating temperature: -40...105°C Supply voltage: 1.2...5.5V DC Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Type of integrated circuit: Supervisor Integrated Circuit |
Produkt ist nicht verfügbar |
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| STM1818SWX7F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC Case: SOT23-3 Threshold on-voltage: 2.88V Mounting: SMD Operating temperature: -40...105°C Supply voltage: 1.2...5.5V DC Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: power on reset monitor (PoR) Type of integrated circuit: Supervisor Integrated Circuit |
Produkt ist nicht verfügbar |
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| STM6321SWY6F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain; push-pull Active logical level: high; low Supply voltage: 1.2...5.5V DC Case: SOT23-5 Operating temperature: -40...85°C Mounting: SMD Threshold on-voltage: 2.93V Integrated circuit features: watchdog |
Produkt ist nicht verfügbar |
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STEVAL-MKI193V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; ASM330LHH; pin strips; Interface: I2C,SPI Type of development kit: evaluation Components: ASM330LHH Kind of connector: pin strips Interface: I2C; SPI Additional functions: integrated accelerometer; integrated gyroscope; temperature sensor Operating voltage: 2...3.6V DC Kit contents: prototype board Number of channels: 7 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| STLQ020C18R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; SOT323-5L Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 1.8V Output current: 0.2A Case: SOT323-5L Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: STLQ020 |
Produkt ist nicht verfügbar |
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| STLQ020C28R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT323-5L Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 2.8V Output current: 0.2A Case: SOT323-5L Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: STLQ020 |
Produkt ist nicht verfügbar |
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| STLQ020C33R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT323-5L Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 3.3V Output current: 0.2A Case: SOT323-5L Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: STLQ020 |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSC211ICT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 8kHz; Ch: 1; SC70-5; reel,tape
Case: SC70-5
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 35µA
Voltage supply range: 2.7...26V DC
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Bandwidth: 8kHz
Slew rate: 75mV/μs
Kind of integrated circuit: current sense
Input offset current: 20nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 8kHz; Ch: 1; SC70-5; reel,tape
Case: SC70-5
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 35µA
Voltage supply range: 2.7...26V DC
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Bandwidth: 8kHz
Slew rate: 75mV/μs
Kind of integrated circuit: current sense
Input offset current: 20nA
Produkt ist nicht verfügbar
| TSC211IYCT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 8kHz; Ch: 1; SC70-6; Iquiesc: 115uA
Case: SC70-6
Mounting: SMT
Operating temperature: -40...125°C
Application: automotive industry
Input bias current: 35µA
Voltage supply range: 2.7...26V DC
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Bandwidth: 8kHz
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 75mV/μs
Kind of integrated circuit: current sense
Input offset current: 20nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 8kHz; Ch: 1; SC70-6; Iquiesc: 115uA
Case: SC70-6
Mounting: SMT
Operating temperature: -40...125°C
Application: automotive industry
Input bias current: 35µA
Voltage supply range: 2.7...26V DC
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Bandwidth: 8kHz
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 75mV/μs
Kind of integrated circuit: current sense
Input offset current: 20nA
Produkt ist nicht verfügbar
| STGF10NC60KD |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGB10NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STM32L452RET6P |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; 512kBFLASH
Type of integrated circuit: ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Category: ST microcontrollers
Description: IC: ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; 512kBFLASH
Type of integrated circuit: ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Produkt ist nicht verfügbar
| STM32L452RET6TR |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; 512kBFLASH
Type of integrated circuit: ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Category: ST microcontrollers
Description: IC: ARM microcontroller; 80MHz; LQFP64; 1.71÷3.6VDC; 512kBFLASH
Type of integrated circuit: ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Produkt ist nicht verfügbar
| STGD5H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 83W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 83W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGD10HF60KD |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62.5W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62.5W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: ignition systems
Produkt ist nicht verfügbar
| STGD19N40LZ |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Produkt ist nicht verfügbar
| STGD20N40LZ |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 25A
Power dissipation: 125W
Case: DPAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Produkt ist nicht verfügbar
| STGD20N45LZAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Produkt ist nicht verfügbar
| STGD25N36LZAG |
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Produkt ist nicht verfügbar
| STGD25N40LZAG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
Produkt ist nicht verfügbar
| STGD3HF60HDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGD3NB60SDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 3A; 48W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3A
Power dissipation: 48W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 3A; 48W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3A
Power dissipation: 48W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
| STGD4H60DF |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGD4M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGD6M65DF2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGD6NC60H-1 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: IPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: IPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGD7NB60ST4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.62 EUR |
| 31+ | 2.35 EUR |
| 41+ | 1.77 EUR |
| 43+ | 1.67 EUR |
| STGD7NC60HT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 70W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 70W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 70W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 70W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
| STGD8NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 62W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 62W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| NUCLEO-L4R5ZI |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L4R5ZIT6
Type of development kit: STM32
Kit contents: base board
Components: STM32L4R5ZIT6
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L4R5ZIT6
Type of development kit: STM32
Kit contents: base board
Components: STM32L4R5ZIT6
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 36.68 EUR |
| 3+ | 35.75 EUR |
| SM6T68A |
|
Hersteller: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4812 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 92+ | 0.79 EUR |
| 123+ | 0.58 EUR |
| 133+ | 0.54 EUR |
| 164+ | 0.44 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| SM6T68AY |
|
Hersteller: STMicroelectronics
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 68V; 6.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.97 EUR |
| 100+ | 0.72 EUR |
| 108+ | 0.66 EUR |
| 134+ | 0.54 EUR |
| 468+ | 0.15 EUR |
| 496+ | 0.14 EUR |
| VND5E160AJTR-E |
|
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 10A; PowerSSO12; 4.5÷28V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Mounting: SMD
Supply voltage: 4.5...28V
Number of channels: 2
Case: PowerSSO12
Kind of package: reel; tape
On-state resistance: 0.16Ω
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 10A; PowerSSO12; 4.5÷28V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Mounting: SMD
Supply voltage: 4.5...28V
Number of channels: 2
Case: PowerSSO12
Kind of package: reel; tape
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
| VND5E160JTR-E |
|
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 10A; PowerSSO12; 4.5÷28V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Mounting: SMD
Supply voltage: 4.5...28V
Number of channels: 2
Case: PowerSSO12
Kind of package: reel; tape
On-state resistance: 0.16Ω
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 10A; PowerSSO12; 4.5÷28V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Mounting: SMD
Supply voltage: 4.5...28V
Number of channels: 2
Case: PowerSSO12
Kind of package: reel; tape
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
| STGW40NC60KD |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Produkt ist nicht verfügbar
| LMV824AIDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| LMV824AIPT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| LMV824AIYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Application: automotive industry
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Application: automotive industry
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| LMV824AIYPT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Application: automotive industry
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Application: automotive industry
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| LMV824IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.7V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.7V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| LMV824IPT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| LMV824IYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Application: automotive industry
Operating voltage: 2.5...5.5V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; 2.5÷5.5V; Ch: 4; SO14; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.9V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.18µA
Input offset current: 50nA
Application: automotive industry
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| STPS80150CW |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 40Ax2; TO247; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247
Kind of package: tube
Max. forward impulse current: 0.5kA
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 40Ax2; TO247; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247
Kind of package: tube
Max. forward impulse current: 0.5kA
Max. forward voltage: 0.68V
Produkt ist nicht verfügbar
| STPS8H100DEE-TR |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; PowerFLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Max. load current: 15A
Semiconductor structure: single diode
Case: PowerFLAT
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 6mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; PowerFLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Max. load current: 15A
Semiconductor structure: single diode
Case: PowerFLAT
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 6mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| STPS8H100FP |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Max. load current: 30A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.56V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Max. load current: 30A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 250A
Max. forward voltage: 0.56V
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 81+ | 0.89 EUR |
| 91+ | 0.79 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| STPS8L30B-TR | |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DPAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.35V
Max. off-state voltage: 30V
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DPAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.35V
Max. off-state voltage: 30V
Load current: 8A
auf Bestellung 9001 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.05 EUR |
| 104+ | 0.69 EUR |
| 115+ | 0.62 EUR |
| 154+ | 0.47 EUR |
| 163+ | 0.44 EUR |
| STPS8L30BY-TR |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DPAK; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40mA
Case: DPAK
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.63V
Max. off-state voltage: 30V
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DPAK; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40mA
Case: DPAK
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.63V
Max. off-state voltage: 30V
Load current: 8A
Produkt ist nicht verfügbar
| STPS8L30DEE-TR |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; PowerFLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 15A
Semiconductor structure: single diode
Case: PowerFLAT
Max. forward voltage: 0.57V
Max. forward impulse current: 100A
Leakage current: 140mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; PowerFLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 15A
Semiconductor structure: single diode
Case: PowerFLAT
Max. forward voltage: 0.57V
Max. forward impulse current: 100A
Leakage current: 140mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| STPSC8H065G |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; D2PAK; tube
Mounting: SMD
Max. load current: 33A
Kind of package: tube
Semiconductor structure: single diode
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; D2PAK; tube
Mounting: SMD
Max. load current: 33A
Kind of package: tube
Semiconductor structure: single diode
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Produkt ist nicht verfügbar
| STPSC8H065G-TR |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Max. off-state voltage: 650V
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Max. off-state voltage: 650V
Load current: 8A
Produkt ist nicht verfügbar
| STPSC8H065G2Y-TR |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape
Application: automotive industry
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.05V
Max. off-state voltage: 650V
Load current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape
Application: automotive industry
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.05V
Max. off-state voltage: 650V
Load current: 8A
Produkt ist nicht verfügbar
| STPSC8TH13TI |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO220AB; tube
Mounting: THT
Max. load current: 33A
Kind of package: tube
Semiconductor structure: double series
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward impulse current: 69A
Max. forward voltage: 1.98V
Technology: SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.23...1.32mm
Load current: 8A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO220AB; tube
Mounting: THT
Max. load current: 33A
Kind of package: tube
Semiconductor structure: double series
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward impulse current: 69A
Max. forward voltage: 1.98V
Technology: SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.23...1.32mm
Load current: 8A x2
Produkt ist nicht verfügbar
| STPS30M80CT |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 15Ax2; TO220AB; tube
Mounting: THT
Max. load current: 30A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward impulse current: 220A
Max. forward voltage: 0.49V
Max. off-state voltage: 80V
Heatsink thickness: 1.23...1.32mm
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 15Ax2; TO220AB; tube
Mounting: THT
Max. load current: 30A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward impulse current: 220A
Max. forward voltage: 0.49V
Max. off-state voltage: 80V
Heatsink thickness: 1.23...1.32mm
Load current: 15A x2
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| STPS30SM80CFP |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 15Ax2; TO220FP; tube; Ir: 20mA
Mounting: THT
Max. load current: 30A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 20mA
Case: TO220FP
Type of diode: Schottky rectifying
Max. forward impulse current: 220A
Max. forward voltage: 0.965V
Max. off-state voltage: 80V
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 15Ax2; TO220FP; tube; Ir: 20mA
Mounting: THT
Max. load current: 30A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 20mA
Case: TO220FP
Type of diode: Schottky rectifying
Max. forward impulse current: 220A
Max. forward voltage: 0.965V
Max. off-state voltage: 80V
Load current: 15A x2
Produkt ist nicht verfügbar
| STGWA60V60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGWT60V60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 334nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STTH1R02Q |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; Ammo Pack; Ifsm: 60A; DO15; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO15
Max. forward voltage: 0.7V
Max. forward impulse current: 60A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; Ammo Pack; Ifsm: 60A; DO15; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO15
Max. forward voltage: 0.7V
Max. forward impulse current: 60A
Kind of package: Ammo Pack
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 374+ | 0.19 EUR |
| 550+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| STTH1R02QRL |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; reel; Ifsm: 60A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO15
Max. forward voltage: 1V
Max. forward impulse current: 60A
Leakage current: 20µA
Kind of package: reel
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; reel; Ifsm: 60A; DO15; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO15
Max. forward voltage: 1V
Max. forward impulse current: 60A
Leakage current: 20µA
Kind of package: reel
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 0.21 EUR |
| 500+ | 0.14 EUR |
| 625+ | 0.11 EUR |
| STTH1R02RL |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; reel,tape; Ifsm: 60A; DO41; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Max. load current: 30A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO41
Max. forward voltage: 0.7V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1.5A; reel,tape; Ifsm: 60A; DO41; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1.5A
Max. load current: 30A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO41
Max. forward voltage: 0.7V
Max. forward impulse current: 60A
Kind of package: reel; tape
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 425+ | 0.17 EUR |
| 480+ | 0.15 EUR |
| 535+ | 0.13 EUR |
| STSPIN220 |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10V
Type of integrated circuit: driver
Output current: 1.3A
Case: VFQFPN16
Mounting: SMD
Kind of integrated circuit: stepper motor controller
Operating temperature: -40...150°C
Kind of package: in-tray
On-state resistance: 0.4Ω
Operating voltage: 1.8...10V
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10V
Type of integrated circuit: driver
Output current: 1.3A
Case: VFQFPN16
Mounting: SMD
Kind of integrated circuit: stepper motor controller
Operating temperature: -40...150°C
Kind of package: in-tray
On-state resistance: 0.4Ω
Operating voltage: 1.8...10V
auf Bestellung 886 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.99 EUR |
| 27+ | 2.72 EUR |
| 35+ | 2.07 EUR |
| 37+ | 1.96 EUR |
| STM1816SWX7F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC
Case: SOT23-3
Threshold on-voltage: 2.88V
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.2...5.5V DC
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: Supervisor Integrated Circuit
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC
Case: SOT23-3
Threshold on-voltage: 2.88V
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.2...5.5V DC
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: Supervisor Integrated Circuit
Produkt ist nicht verfügbar
| STM1818SWX7F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC
Case: SOT23-3
Threshold on-voltage: 2.88V
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.2...5.5V DC
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: Supervisor Integrated Circuit
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC
Case: SOT23-3
Threshold on-voltage: 2.88V
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.2...5.5V DC
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Type of integrated circuit: Supervisor Integrated Circuit
Produkt ist nicht verfügbar
| STM6321SWY6F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain; push-pull
Active logical level: high; low
Supply voltage: 1.2...5.5V DC
Case: SOT23-5
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 2.93V
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain; push-pull
Active logical level: high; low
Supply voltage: 1.2...5.5V DC
Case: SOT23-5
Operating temperature: -40...85°C
Mounting: SMD
Threshold on-voltage: 2.93V
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
| STEVAL-MKI193V1 |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; ASM330LHH; pin strips; Interface: I2C,SPI
Type of development kit: evaluation
Components: ASM330LHH
Kind of connector: pin strips
Interface: I2C; SPI
Additional functions: integrated accelerometer; integrated gyroscope; temperature sensor
Operating voltage: 2...3.6V DC
Kit contents: prototype board
Number of channels: 7
Category: STM development kits
Description: Dev.kit: evaluation; ASM330LHH; pin strips; Interface: I2C,SPI
Type of development kit: evaluation
Components: ASM330LHH
Kind of connector: pin strips
Interface: I2C; SPI
Additional functions: integrated accelerometer; integrated gyroscope; temperature sensor
Operating voltage: 2...3.6V DC
Kit contents: prototype board
Number of channels: 7
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| STLQ020C18R |
|
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; SOT323-5L
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.2A
Case: SOT323-5L
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; SOT323-5L
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.2A
Case: SOT323-5L
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Produkt ist nicht verfügbar
| STLQ020C28R |
|
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT323-5L
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.2A
Case: SOT323-5L
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT323-5L
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.2A
Case: SOT323-5L
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Produkt ist nicht verfügbar
| STLQ020C33R |
|
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT323-5L
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT323-5L
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT323-5L
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT323-5L
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 155+ | 0.46 EUR |
| 164+ | 0.44 EUR |