Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (162373) > Seite 2663 nach 2707
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| STLQ020J33R | STMicroelectronics |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; flip chip4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 3.3V Output current: 0.2A Case: flip chip4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: STLQ020 |
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| STLQ020PU19R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.9V; 0.2A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 1.9V Output current: 0.2A Case: DFN6 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: STLQ020 |
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| STLQ020PU28R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 2.8V Output current: 0.2A Case: DFN6 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: STLQ020 |
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| L6598 | STMicroelectronics |
 Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; DIP16; Uoper: 10÷11.4V; 400kHz Type of integrated circuit: driver Kind of integrated circuit: PFC controller Case: DIP16 Supply voltage: 14.6...16.6V DC supply current: 25mA Mounting: THT Operating temperature: -40...125°C Operating voltage: 10...11.4V Frequency: 400kHz |
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| STP2N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W Case: TO220-3 Mounting: THT Kind of package: tube On-state resistance: 4.5Ω Drain current: 1.3A Drain-source voltage: 800V Power dissipation: 42W Polarisation: unipolar Gate charge: 5nC Technology: MDmesh™ K5 Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 8A |
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| STGIB10CH60TS-L | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM 2nd Case: SDIP2B-26L Output current: 10A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18/0...400V Frequency: 20kHz Power dissipation: 66W Collector-emitter voltage: 600V |
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| STGIB10CH60TS-LZ | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver Type of integrated circuit: driver |
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LM317K | STMicroelectronics |
Category: Regulated voltage regulators Description: IC: voltage regulator; adjustable; 1.2÷37V; 1.5A; TO3; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable Output voltage: 1.2...37V Output current: 1.5A Case: TO3 Mounting: THT |
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| STM32F205ZGT6TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C Type of integrated circuit: ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB RAM; 1MB FLASH Operating temperature: -40...85°C |
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| STM32F205ZGT6V | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C Type of integrated circuit: ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB RAM; 1MB FLASH Operating temperature: -40...85°C |
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| STM32F205ZGT6W | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C Type of integrated circuit: ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB RAM; 1MB FLASH Operating temperature: -40...85°C |
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TS3431AILT | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Maximum output current: 0.1A Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±1% Operating voltage: 1.24...24V Reference voltage: 1.24V |
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TS3431BILT | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Maximum output current: 0.1A Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±0.5% Operating voltage: 1.24...24V Reference voltage: 1.24V |
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TS3431ILT | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±2%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Maximum output current: 0.1A Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Operating voltage: 1.24...24V Reference voltage: 1.24V |
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L6926013TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: IC: driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8 Operating temperature: -40...150°C Mounting: SMD Type of integrated circuit: driver Output voltage: 0.6...38V DC Number of channels: 1 Input voltage: 2...5.5V DC Case: TSSOP8 Kind of integrated circuit: DC/DC converter Frequency: 800kHz Topology: buck |
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L6926Q1TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: IC: driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8 Operating temperature: -40...150°C Mounting: SMD Type of integrated circuit: driver Output voltage: 0.6...38V DC Number of channels: 1 Input voltage: 2...5.5V DC Case: TSSOP8 Kind of integrated circuit: DC/DC converter Frequency: 800kHz Topology: buck |
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BU208A | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 1.5kV; 5A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 1.5kV Collector current: 5A Power: 150W Case: TO3 Mounting: THT |
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| STM32F334K4T6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2 Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 25 Case: LQFP32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 2kB SRAM; 16kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STM32F334K6T6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2 Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 25 Case: LQFP32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 2kB SRAM; 32kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STM32F334K6T7 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷105°C; Cmp: 2 Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 25 Case: LQFP32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 2kB SRAM; 32kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STM32F334K8T6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2 Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 25 Case: LQFP32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 2kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STM32F334K8T6TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2 Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 25 Case: LQFP32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 2kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STM32F334K8T7 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷105°C; Cmp: 2 Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 25 Case: LQFP32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 8kB SRAM; 64kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STM32F334K8U6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; -40÷85°C Type of integrated circuit: ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 24 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 8kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 3 |
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| STGP19NC60SD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 130W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 54.5nC Kind of package: tube |
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| STGP10H60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 115W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 57nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP15H60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 30W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 30W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 81nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP15M120F3 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube |
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| STGP15M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 136W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 45nC Kind of package: tube |
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| STGP20H60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 115nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP20H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
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| STGP20M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 63nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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STGP20V60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 116nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGP30H60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 105nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP30H60DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
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| STGP30H65F | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 105nC Kind of package: tube |
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| STGP30V60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 258W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 258W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 163nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP40V60F | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube |
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| STGP4M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 4A Power dissipation: 68W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 16A Mounting: THT Gate charge: 15.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP6M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 21.2nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP7H60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 7A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 28A Mounting: THT Gate charge: 46nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGP8M120DF3 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 32A Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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| STGPL6NC60DI | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 6A; 56W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 56W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 12nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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TSX7192IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 8.5MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape Kind of package: reel; tape Input offset voltage: 0.45mV Slew rate: 2.5V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...125°C Integrated circuit features: precision; rail-to-rail Input bias current: 0.2nA Voltage supply range: 2.7...16V DC Quiescent current: 1mA Input offset current: 0.2nA Case: SO8 Number of channels: 2 Bandwidth: 8.5MHz Mounting: SMT |
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| TSX7192IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 8.5MHz; Ch: 2; miniSO8; 2.7÷16VDC Kind of package: reel; tape Input offset voltage: 0.45mV Slew rate: 2.5V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...125°C Integrated circuit features: precision; rail-to-rail Input bias current: 0.2nA Voltage supply range: 2.7...16V DC Quiescent current: 1mA Input offset current: 0.2nA Case: miniSO8 Number of channels: 2 Bandwidth: 8.5MHz Mounting: SMT |
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TSX7192IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 8.5MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape Kind of package: reel; tape Input offset voltage: 0.45mV Slew rate: 2.5V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...125°C Integrated circuit features: precision; rail-to-rail Input bias current: 0.2nA Application: automotive industry Voltage supply range: 2.7...16V DC Quiescent current: 1mA Input offset current: 0.2nA Case: SO8 Number of channels: 2 Bandwidth: 8.5MHz Mounting: SMT |
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| TSX7192IYST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 8.5MHz; Ch: 2; miniSO8; 2.7÷16VDC Kind of package: reel; tape Input offset voltage: 0.45mV Slew rate: 2.5V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...125°C Integrated circuit features: precision; rail-to-rail Input bias current: 0.2nA Application: automotive industry Voltage supply range: 2.7...16V DC Quiescent current: 1mA Input offset current: 0.2nA Case: miniSO8 Number of channels: 2 Bandwidth: 8.5MHz Mounting: SMT |
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| STGB20H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape |
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| STGB30H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape |
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| STGF20H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 45W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 45W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
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| STGF30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 50W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
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| STGH30H65DFB-2AG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: H2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGWA20H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| STGWA30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| STGWA40H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGWA50H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube |
Produkt ist nicht verfügbar |
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| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGWA80H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STGWA80H65DFBAG | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 535W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 453nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
| STLQ020J33R |
|
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; flip chip4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 3.3V
Output current: 0.2A
Case: flip chip4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; flip chip4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 3.3V
Output current: 0.2A
Case: flip chip4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Produkt ist nicht verfügbar
| STLQ020PU19R |
|
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.9V; 0.2A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.9V
Output current: 0.2A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.9V; 0.2A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.9V
Output current: 0.2A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Produkt ist nicht verfügbar
| STLQ020PU28R |
|
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.2A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.2A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: STLQ020
Produkt ist nicht verfügbar
| L6598 | |
|
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; DIP16; Uoper: 10÷11.4V; 400kHz
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: DIP16
Supply voltage: 14.6...16.6V
DC supply current: 25mA
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 10...11.4V
Frequency: 400kHz
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; DIP16; Uoper: 10÷11.4V; 400kHz
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: DIP16
Supply voltage: 14.6...16.6V
DC supply current: 25mA
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 10...11.4V
Frequency: 400kHz
Produkt ist nicht verfügbar
| STP2N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 4.5Ω
Drain current: 1.3A
Drain-source voltage: 800V
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 5nC
Technology: MDmesh™ K5
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 4.5Ω
Drain current: 1.3A
Drain-source voltage: 800V
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 5nC
Technology: MDmesh™ K5
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 8A
Produkt ist nicht verfügbar
| STGIB10CH60TS-L |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM 2nd
Case: SDIP2B-26L
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V
Frequency: 20kHz
Power dissipation: 66W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM 2nd
Case: SDIP2B-26L
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18/0...400V
Frequency: 20kHz
Power dissipation: 66W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
| STGIB10CH60TS-LZ |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| LM317K |
|
Hersteller: STMicroelectronics
Category: Regulated voltage regulators
Description: IC: voltage regulator; adjustable; 1.2÷37V; 1.5A; TO3; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO3
Mounting: THT
Category: Regulated voltage regulators
Description: IC: voltage regulator; adjustable; 1.2÷37V; 1.5A; TO3; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO3
Mounting: THT
Produkt ist nicht verfügbar
| STM32F205ZGT6TR |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB RAM; 1MB FLASH
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB RAM; 1MB FLASH
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| STM32F205ZGT6V |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB RAM; 1MB FLASH
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB RAM; 1MB FLASH
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| STM32F205ZGT6W |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB RAM; 1MB FLASH
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB RAM; 1MB FLASH
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| TS3431AILT |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Operating voltage: 1.24...24V
Reference voltage: 1.24V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Operating voltage: 1.24...24V
Reference voltage: 1.24V
Produkt ist nicht verfügbar
| TS3431BILT |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±0.5%
Operating voltage: 1.24...24V
Reference voltage: 1.24V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±0.5%
Operating voltage: 1.24...24V
Reference voltage: 1.24V
Produkt ist nicht verfügbar
| TS3431ILT |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Operating voltage: 1.24...24V
Reference voltage: 1.24V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Maximum output current: 0.1A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Operating voltage: 1.24...24V
Reference voltage: 1.24V
Produkt ist nicht verfügbar
| L6926013TR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: driver
Output voltage: 0.6...38V DC
Number of channels: 1
Input voltage: 2...5.5V DC
Case: TSSOP8
Kind of integrated circuit: DC/DC converter
Frequency: 800kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: driver
Output voltage: 0.6...38V DC
Number of channels: 1
Input voltage: 2...5.5V DC
Case: TSSOP8
Kind of integrated circuit: DC/DC converter
Frequency: 800kHz
Topology: buck
Produkt ist nicht verfügbar
| L6926Q1TR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: driver
Output voltage: 0.6...38V DC
Number of channels: 1
Input voltage: 2...5.5V DC
Case: TSSOP8
Kind of integrated circuit: DC/DC converter
Frequency: 800kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: driver
Output voltage: 0.6...38V DC
Number of channels: 1
Input voltage: 2...5.5V DC
Case: TSSOP8
Kind of integrated circuit: DC/DC converter
Frequency: 800kHz
Topology: buck
Produkt ist nicht verfügbar
| BU208A |
|
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 5A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 5A
Power: 150W
Case: TO3
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 5A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 5A
Power: 150W
Case: TO3
Mounting: THT
Produkt ist nicht verfügbar
| STM32F334K4T6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 16kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STM32F334K6T6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STM32F334K6T7 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷105°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷105°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STM32F334K8T6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STM32F334K8T6TR |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷85°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 2kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STM32F334K8T7 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷105°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; LQFP32; 2÷3.6VDC; -40÷105°C; Cmp: 2
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 25
Case: LQFP32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STM32F334K8U6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 24
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Category: ST microcontrollers
Description: IC: ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 24
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 3
Produkt ist nicht verfügbar
| STGP19NC60SD |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 54.5nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 54.5nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP10H60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP15H60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 30W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 30W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP15M120F3 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP15M65DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP20H60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP20H65DFB2 |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP20M65DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP20V60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.76 EUR |
| STGP30H60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP30H60DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP30H65F |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP30V60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP40V60F |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGP4M65DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: THT
Gate charge: 15.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: THT
Gate charge: 15.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP6M65DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 21.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 21.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP7H60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGP8M120DF3 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGPL6NC60DI |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 56W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 56W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 56W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 56W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| TSX7192IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: SO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: SO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Produkt ist nicht verfügbar
| TSX7192IST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; miniSO8; 2.7÷16VDC
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: miniSO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; miniSO8; 2.7÷16VDC
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: miniSO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Produkt ist nicht verfügbar
| TSX7192IYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Application: automotive industry
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: SO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; SO8; 2.7÷16VDC; reel,tape
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Application: automotive industry
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: SO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Produkt ist nicht verfügbar
| TSX7192IYST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; miniSO8; 2.7÷16VDC
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Application: automotive industry
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: miniSO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8.5MHz; Ch: 2; miniSO8; 2.7÷16VDC
Kind of package: reel; tape
Input offset voltage: 0.45mV
Slew rate: 2.5V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Integrated circuit features: precision; rail-to-rail
Input bias current: 0.2nA
Application: automotive industry
Voltage supply range: 2.7...16V DC
Quiescent current: 1mA
Input offset current: 0.2nA
Case: miniSO8
Number of channels: 2
Bandwidth: 8.5MHz
Mounting: SMT
Produkt ist nicht verfügbar
| STGB20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
| STGB30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
| STGF20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGF30H65DFB2 |
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGH30H65DFB-2AG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGWA20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGWA30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGWA40H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGWA50H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Produkt ist nicht verfügbar
| STGWA60H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGWA80H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| STGWA80H65DFBAG |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 535W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 453nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 535W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 453nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar