Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (165011) > Seite 2740 nach 2751
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| STF5N95K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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STI4N62K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of channel: enhancement Version: ESD Polarisation: unipolar Kind of package: tube |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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STD4N62K3 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Version: ESD Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STU4N62K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 620V Drain current: 3.8A Power dissipation: 70W Case: IPAK; TO251 Gate-source voltage: 30V On-state resistance: 2Ω Mounting: THT Gate charge: 22nC Kind of channel: enhancement |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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2STR2230 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector current: 1.5A Power dissipation: 0.5W Collector-emitter voltage: 30V Current gain: 70...560 Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP |
auf Bestellung 933 Stücke: Lieferzeit 14-21 Tag (e) |
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STD4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: IPAK On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC Pulsed drain current: 16A |
auf Bestellung 318 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TCPP01-M12 | STMicroelectronics |
Category: UnclassifiedDescription: TCPP01-M12 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP17NK40ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 9.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP19NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W Type of transistor: N-MOSFET Technology: MESH OVERLAY™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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DALC208SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD Type of diode: diode arrays Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 9V Kind of package: reel; tape Version: ESD Leakage current: 1µA Max. forward impulse current: 6A |
auf Bestellung 3598 Stücke: Lieferzeit 14-21 Tag (e) |
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STP5NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Pulsed drain current: 20A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 11084 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T33CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 22695 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T36CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1519 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T24A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Leakage current: 1µA Tolerance: ±5% Max. forward impulse current: 18A Max. off-state voltage: 20.5V Breakdown voltage: 24V Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Semiconductor structure: unidirectional Case: SMB Mounting: SMD |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T200A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 4682 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T12CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 36A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1463 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T220A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 188V Breakdown voltage: 220V Max. forward impulse current: 2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 4793 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T36CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2175 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP65N045M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 170A Power dissipation: 245W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STP65N150M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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| LM2903WHYST | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape Type of integrated circuit: comparator Mounting: SMT Case: miniSO8 Operating temperature: -40...150°C Input offset voltage: 15mV Kind of package: reel; tape Input bias current: 0.4µA Input offset current: 150nA Kind of comparator: low-power Kind of output: open collector Number of comparators: 2 Operating voltage: 2...36V |
Produkt ist nicht verfügbar |
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TSV912HYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 8MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 4.5V/μs Quiescent current: 1.1mA Operating temperature: -40...150°C Input offset voltage: 7.5mV Voltage supply range: 2.5...5.5V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 5nA Input offset current: 5nA Application: automotive industry |
Produkt ist nicht verfügbar |
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| STM32F413MHY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 60 Case: WLCSP81 Supply voltage: 1.7...3.6V DC Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 320kB SRAM; 1.5MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STM32F423MHY3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 60 Case: WLCSP81 Supply voltage: 1.7...3.6V DC Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 320kB SRAM; 1.5MB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STM32F423MHY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 60 Case: WLCSP81 Supply voltage: 1.7...3.6V DC Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 320kB SRAM; 1.5MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
Produkt ist nicht verfügbar |
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T1010H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Kind of package: tube Mounting: SMD Case: D2PAK Type of thyristor: triac Gate current: 10mA Max. load current: 10A |
Produkt ist nicht verfügbar |
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| T1010H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Kind of package: reel; tape Mounting: SMD Case: D2PAK Type of thyristor: triac Gate current: 10mA Max. load current: 10A |
Produkt ist nicht verfügbar |
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| STD85N10F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 70A Power dissipation: 85W Case: DPAK Gate-source voltage: 20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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TMBYV10-60FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGB10NB40LZT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: internally clamped Application: automotive industry Version: ESD |
Produkt ist nicht verfügbar |
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VNS14NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape Type of integrated circuit: power switch Output current: 12A Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 35mΩ |
Produkt ist nicht verfügbar |
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M95P32-IXMNT/E | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32Mb EEPROM Interface: SPI Memory organisation: 4Mx8bit Operating voltage: 1.6...3.6V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| ST25R3920B-AQWT | STMicroelectronics |
Category: UnclassifiedDescription: ST25R3920B-AQWT |
auf Bestellung 11963 Stücke: Lieferzeit 14-21 Tag (e) |
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T1635H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Max. forward impulse current: 0.168kA Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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T1635H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube Technology: Snubberless™ |
Produkt ist nicht verfügbar |
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| T1635H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| T1635H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220ABIns Max. forward impulse current: 0.168kA Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
Produkt ist nicht verfügbar |
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| T1635H-8G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| T1635H-8G | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
Produkt ist nicht verfügbar |
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| T1635H-8I | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Max. forward impulse current: 160A Mounting: THT Max. forward voltage: 1.3V |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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T3050H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™ Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 50mA Max. load current: 30A Max. forward impulse current: 284A Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Technology: Snubberless™ |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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| T3050H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 30A Case: TO220ABIns Gate current: 50mA Max. forward impulse current: 284A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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| T3050H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 30A Case: D2PAK Gate current: 50mA Max. forward impulse current: 284A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
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| T3050H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 30A Case: D2PAK Gate current: 50mA Max. forward impulse current: 284A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BULD118D-1 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 2A Power dissipation: 20W Case: TO251 Mounting: THT Kind of package: tube Current gain: 50 |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T220CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Case: SMB Mounting: SMD Leakage current: 1µA Max. forward impulse current: 2A Tolerance: ±5% Max. off-state voltage: 188V Breakdown voltage: 220V Semiconductor structure: bidirectional Peak pulse power dissipation: 0.6kW Kind of package: reel; tape |
auf Bestellung 2012 Stücke: Lieferzeit 14-21 Tag (e) |
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| STM32H725ZET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 97 Case: LQFP144 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 512kB FLASH; 564kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
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| STM32H733ZGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 564kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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STM32H733VGH6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; TFBGA129; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 80 Case: TFBGA129 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 564kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TS3431AILT | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23-3 Operating temperature: -40...105°C Operating voltage: 1.24...24V Kind of package: reel; tape Maximum output current: 0.1A |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 2.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2482 Stücke: Lieferzeit 14-21 Tag (e) |
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| LSM6DSO32TR | STMicroelectronics |
Category: Resistive Magnetic SensorsDescription: Sensor: accelerometer; SMD,SMT; -40÷85°C Operating temperature: -40...85°C Type of sensor: accelerometer Mounting: SMD; SMT |
auf Bestellung 15808 Stücke: Lieferzeit 14-21 Tag (e) |
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TN22-1500H | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 2A; 1.8A; Igt: 1.5mA; IPAK; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 2A Load current: 1.8A Gate current: 1.5mA Case: IPAK Mounting: THT Kind of package: tube Max. forward impulse current: 180A |
auf Bestellung 374 Stücke: Lieferzeit 14-21 Tag (e) |
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ESDCAN01-2BLY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25÷30V; 5.5A; bidirectional; SOT23; Ch: 2; ESD Type of diode: TVS array Breakdown voltage: 25...30V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 0.1µA Number of channels: 2 Capacitance: 30pF Application: automotive industry Version: ESD |
auf Bestellung 1238 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB12NM50T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 550V; 12A; 160W; D2PAK,TO263; SMT Type of transistor: N-MOSFET Technology: MDmesh™ Drain-source voltage: 550V Drain current: 12A Power dissipation: 160W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Gate charge: 28nC Electrical mounting: SMT |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESDA7P60-1U1M | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 700W; 6.8V; 60A; unidirectional; QFN1610; reel,tape; ESD Type of diode: TVS Peak pulse power dissipation: 700W Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 60A Semiconductor structure: unidirectional Case: QFN1610 Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1.5KE250A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 250V; 5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Max. off-state voltage: 213V Breakdown voltage: 250V Max. forward impulse current: 5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF5N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STI4N62K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 186+ | 0.39 EUR |
| STD4N62K3 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STU4N62K3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.62 EUR |
| 2STR2230 |
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Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 70...560
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 70...560
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 161+ | 0.45 EUR |
| 235+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 500+ | 0.18 EUR |
| STD4NK60Z-1 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 111+ | 0.64 EUR |
| 149+ | 0.48 EUR |
| 164+ | 0.44 EUR |
| STB4NK60Z-1 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.71 EUR |
| TCPP01-M12 |
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auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.7 EUR |
| STP17NK40ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.49 EUR |
| 20+ | 3.65 EUR |
| STP19NF20 | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| DALC208SC6 |
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Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
auf Bestellung 3598 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 193+ | 0.37 EUR |
| 218+ | 0.33 EUR |
| 302+ | 0.24 EUR |
| 345+ | 0.21 EUR |
| 414+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 1500+ | 0.13 EUR |
| STP5NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 89+ | 0.81 EUR |
| 96+ | 0.75 EUR |
| 100+ | 0.72 EUR |
| SM6T33CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 11084 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 182+ | 0.39 EUR |
| 204+ | 0.35 EUR |
| 269+ | 0.27 EUR |
| 305+ | 0.23 EUR |
| 363+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 2500+ | 0.12 EUR |
| SM6T36A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 300+ | 0.24 EUR |
| 321+ | 0.22 EUR |
| 343+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| SM6T33CAY |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 22695 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 205+ | 0.35 EUR |
| 247+ | 0.29 EUR |
| 265+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2500+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
| SM6T36CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1519 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 148+ | 0.48 EUR |
| 202+ | 0.35 EUR |
| 225+ | 0.32 EUR |
| 247+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 1500+ | 0.16 EUR |
| SM6T24A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 161+ | 0.45 EUR |
| 233+ | 0.31 EUR |
| 274+ | 0.26 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.18 EUR |
| SM6T200A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4682 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 143+ | 0.5 EUR |
| 158+ | 0.45 EUR |
| 204+ | 0.35 EUR |
| 230+ | 0.31 EUR |
| 272+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.17 EUR |
| SM6T12CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 234+ | 0.31 EUR |
| 304+ | 0.24 EUR |
| 343+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| SM6T220A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4793 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 205+ | 0.35 EUR |
| 226+ | 0.32 EUR |
| 281+ | 0.25 EUR |
| 307+ | 0.23 EUR |
| 343+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.17 EUR |
| SM6T36CAY |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2175 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 127+ | 0.56 EUR |
| 139+ | 0.52 EUR |
| 161+ | 0.44 EUR |
| 199+ | 0.36 EUR |
| 250+ | 0.33 EUR |
| STP65N045M9 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP65N150M9 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2903WHYST |
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Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSV912HYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F413MHY6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F423MHY3TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F423MHY6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T1010H-6G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T1010H-6G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD85N10F7AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.19 EUR |
| TMBYV10-60FILM |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 232+ | 0.31 EUR |
| 254+ | 0.28 EUR |
| 365+ | 0.2 EUR |
| 443+ | 0.16 EUR |
| 532+ | 0.13 EUR |
| STGB10NB40LZT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VNS14NV04PTR-E |
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Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95P32-IXMNT/E |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ST25R3920B-AQWT |
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auf Bestellung 11963 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 5.53 EUR |
| T1635H-6T |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 52+ | 1.4 EUR |
| 57+ | 1.26 EUR |
| T1635H-6G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
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| T1635H-6G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| T1635H-6I |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| T1635H-8G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| T1635H-8G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| T1635H-8I |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 160A
Mounting: THT
Max. forward voltage: 1.3V
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 160A
Mounting: THT
Max. forward voltage: 1.3V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 1.02 EUR |
| T3050H-6T |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Technology: Snubberless™
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 29+ | 2.52 EUR |
| 36+ | 2.03 EUR |
| 42+ | 1.72 EUR |
| 50+ | 1.66 EUR |
| T3050H-6I |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: TO220ABIns
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: TO220ABIns
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| T3050H-6G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T3050H-6G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BULD118D-1 |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 2A
Power dissipation: 20W
Case: TO251
Mounting: THT
Kind of package: tube
Current gain: 50
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 2A
Power dissipation: 20W
Case: TO251
Mounting: THT
Kind of package: tube
Current gain: 50
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 88+ | 0.82 EUR |
| 102+ | 0.71 EUR |
| 108+ | 0.66 EUR |
| SM6T220CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 2A
Tolerance: ±5%
Max. off-state voltage: 188V
Breakdown voltage: 220V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 2A
Tolerance: ±5%
Max. off-state voltage: 188V
Breakdown voltage: 220V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
auf Bestellung 2012 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 129+ | 0.56 EUR |
| 144+ | 0.5 EUR |
| 191+ | 0.38 EUR |
| 216+ | 0.33 EUR |
| 256+ | 0.28 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| STM32H725ZET6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 512kB FLASH; 564kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 512kB FLASH; 564kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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| STM32H733ZGT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32H733VGH6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; TFBGA129; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: TFBGA129
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; TFBGA129; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: TFBGA129
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS3431AILT |
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Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 1.24...24V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 1.24...24V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 313+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 432+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| SMBJ154A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| LSM6DSO32TR |
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Hersteller: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; SMD,SMT; -40÷85°C
Operating temperature: -40...85°C
Type of sensor: accelerometer
Mounting: SMD; SMT
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; SMD,SMT; -40÷85°C
Operating temperature: -40...85°C
Type of sensor: accelerometer
Mounting: SMD; SMT
auf Bestellung 15808 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 3.75 EUR |
| TN22-1500H |
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Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 2A; 1.8A; Igt: 1.5mA; IPAK; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 2A
Load current: 1.8A
Gate current: 1.5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 2A; 1.8A; Igt: 1.5mA; IPAK; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 2A
Load current: 1.8A
Gate current: 1.5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 45+ | 1.6 EUR |
| 75+ | 1.15 EUR |
| 150+ | 1.04 EUR |
| ESDCAN01-2BLY |
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Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 30pF
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 30pF
Application: automotive industry
Version: ESD
auf Bestellung 1238 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 758+ | 0.094 EUR |
| 908+ | 0.079 EUR |
| 1007+ | 0.071 EUR |
| 1073+ | 0.067 EUR |
| STB12NM50T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 550V; 12A; 160W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 550V; 12A; 160W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 2.19 EUR |
| ESDA7P60-1U1M |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 700W; 6.8V; 60A; unidirectional; QFN1610; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 700W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Case: QFN1610
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 700W; 6.8V; 60A; unidirectional; QFN1610; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 700W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Case: QFN1610
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE250A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 250V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 213V
Breakdown voltage: 250V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 250V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 213V
Breakdown voltage: 250V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 88+ | 0.82 EUR |
| 122+ | 0.59 EUR |


















