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STF5N95K5 STMicroelectronics en.DM00084492.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STI4N62K3 STI4N62K3 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E95A3DC85EE745&compId=STD4N62K3.pdf?ci_sign=6dfa425ea571eea9705ad043b988cf974ef7f395 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
auf Bestellung 186 Stücke:
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122+0.59 EUR
186+0.39 EUR
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STD4N62K3 STD4N62K3 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E95A3DC85EE745&compId=STD4N62K3.pdf?ci_sign=6dfa425ea571eea9705ad043b988cf974ef7f395 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
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STU4N62K3 STMicroelectronics en.CD00274723.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance:
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
auf Bestellung 1100 Stücke:
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150+0.62 EUR
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2STR2230 2STR2230 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B98AFEB92100D2&compId=2str2230.pdf?ci_sign=215c923424f91d3a397c37a8d71d0ed36c3e33d4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 70...560
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 933 Stücke:
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161+0.45 EUR
235+0.3 EUR
278+0.26 EUR
500+0.18 EUR
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STD4NK60Z-1 STD4NK60Z-1 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A6450DF300D2&compId=std4nk60z-1.pdf?ci_sign=edabe8b3b66fc66c2e6cad4089c2a28265b7d778 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
auf Bestellung 318 Stücke:
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111+0.64 EUR
149+0.48 EUR
164+0.44 EUR
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STB4NK60Z-1 STMicroelectronics en.CD00003002.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
150+0.71 EUR
Mindestbestellmenge: 150
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TCPP01-M12 STMicroelectronics dm00595160.pdf Category: Unclassified
Description: TCPP01-M12
auf Bestellung 3000 Stücke:
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3000+0.7 EUR
Mindestbestellmenge: 3000
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STP17NK40ZFP STP17NK40ZFP STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AB42C1D3450C745&compId=STP17NK40ZFP.pdf?ci_sign=44e4e0320e547af0d7238266f8a799022b326249 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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20+3.65 EUR
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STP19NF20 STP19NF20 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D6DF3DB004A745&compId=STB19NF20.pdf?ci_sign=4c18bb9b395d1f32d3f234a4baa51d6f20ae8937 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
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59+1.22 EUR
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DALC208SC6 DALC208SC6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBA869557E9B3E28&compId=DALC208.pdf?ci_sign=27290afdc3d57c4f6f0e6918d622c1c1beee2b0c Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
auf Bestellung 3598 Stücke:
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162+0.44 EUR
193+0.37 EUR
218+0.33 EUR
302+0.24 EUR
345+0.21 EUR
414+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
1500+0.13 EUR
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STP5NK60Z STP5NK60Z STMicroelectronics en.CD00003042.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 170 Stücke:
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81+0.89 EUR
89+0.81 EUR
96+0.75 EUR
100+0.72 EUR
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SM6T33CA SM6T33CA STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 11084 Stücke:
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148+0.49 EUR
182+0.39 EUR
204+0.35 EUR
269+0.27 EUR
305+0.23 EUR
363+0.2 EUR
500+0.17 EUR
1000+0.15 EUR
2500+0.12 EUR
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SM6T36A SM6T36A STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 900 Stücke:
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264+0.27 EUR
300+0.24 EUR
321+0.22 EUR
343+0.21 EUR
368+0.19 EUR
400+0.18 EUR
500+0.17 EUR
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SM6T33CAY SM6T33CAY STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB82531ED9A5CBFC6AB36D3820&compId=SM6TxxY.pdf?ci_sign=d7cb0a2306b640a208529662b96dbcd1761813a9 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 22695 Stücke:
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167+0.43 EUR
205+0.35 EUR
247+0.29 EUR
265+0.27 EUR
500+0.26 EUR
1000+0.24 EUR
2500+0.22 EUR
5000+0.21 EUR
Mindestbestellmenge: 167
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SM6T36CA SM6T36CA STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C98DF88C6F8469&compId=SM6T150CA.pdf?ci_sign=34df2426849dc9a7f94977dfc3c17d2f2f871415 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1519 Stücke:
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125+0.57 EUR
148+0.48 EUR
202+0.35 EUR
225+0.32 EUR
247+0.29 EUR
500+0.23 EUR
1000+0.21 EUR
1500+0.16 EUR
Mindestbestellmenge: 125
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SM6T24A SM6T24A STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
auf Bestellung 936 Stücke:
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120+0.6 EUR
161+0.45 EUR
233+0.31 EUR
274+0.26 EUR
334+0.21 EUR
500+0.18 EUR
Mindestbestellmenge: 120
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SM6T200A SM6T200A STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4682 Stücke:
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120+0.6 EUR
143+0.5 EUR
158+0.45 EUR
204+0.35 EUR
230+0.31 EUR
272+0.26 EUR
500+0.23 EUR
1000+0.2 EUR
2500+0.17 EUR
Mindestbestellmenge: 120
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SM6T12CA SM6T12CA STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C98DF88C6F8469&compId=SM6T150CA.pdf?ci_sign=34df2426849dc9a7f94977dfc3c17d2f2f871415 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
211+0.34 EUR
234+0.31 EUR
304+0.24 EUR
343+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 167
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SM6T220A SM6T220A STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4793 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
205+0.35 EUR
226+0.32 EUR
281+0.25 EUR
307+0.23 EUR
343+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
2500+0.17 EUR
Mindestbestellmenge: 167
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SM6T36CAY SM6T36CAY STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9ACB9DA622F87C0C2&compId=SM6T36CAY.pdf?ci_sign=1c3f690ab0b5e9e3862bf1cd0693369452dfd1eb Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2175 Stücke:
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114+0.63 EUR
127+0.56 EUR
139+0.52 EUR
161+0.44 EUR
199+0.36 EUR
250+0.33 EUR
Mindestbestellmenge: 114
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STP65N045M9 STMicroelectronics pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8CEB184FFF480D4&compId=stp65n045m9.pdf?ci_sign=e3545100f8460ef4bece0288baa21d3caa03066d Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP65N150M9 STMicroelectronics pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8CEAE88C405A0D4&compId=stp65n150m9.pdf?ci_sign=554d7d0395316ed43778a26e6b03b6f61597a360 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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LM2903WHYST STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B99F7A85CA00D2&compId=lm2903wh.pdf?ci_sign=a5954f8e83234ef1c7f4ed7a26ca2f61ede6a9e1 Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
Produkt ist nicht verfügbar
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TSV912HYDT TSV912HYDT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9CBED9AF960D2&compId=tsv912h.pdf?ci_sign=8401448b75c3fa76d22032a2106f742a9304054c Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
Produkt ist nicht verfügbar
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STM32F413MHY6TR STMicroelectronics en.DM00282249.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F423MHY3TR STMicroelectronics stm32f423mh.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
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STM32F423MHY6TR STMicroelectronics en.DM00282247.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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T1010H-6G T1010H-6G STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B5929F26E612A0C4&compId=T1010H-6G.pdf?ci_sign=47562eabfe72ff0f77f92f34bf9a274ffc3c04c8 Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Produkt ist nicht verfügbar
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T1010H-6G-TR STMicroelectronics en.CD00235248.pdf Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Produkt ist nicht verfügbar
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STD85N10F7AG STMicroelectronics en.DM00136911.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
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TMBYV10-60FILM TMBYV10-60FILM STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B9C2A45CA0D2&compId=tmbyv10-60.pdf?ci_sign=940b6944878f7e56a7c53d22b4d29a6a109ff764 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 594 Stücke:
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254+0.28 EUR
365+0.2 EUR
443+0.16 EUR
532+0.13 EUR
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STGB10NB40LZT4 STMicroelectronics en.DM00372350.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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VNS14NV04PTR-E VNS14NV04PTR-E STMicroelectronics en.CD00230007.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
Produkt ist nicht verfügbar
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M95P32-IXMNT/E M95P32-IXMNT/E STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818C19FB86B5E0D5&compId=m95p32-i.pdf?ci_sign=5e683c88528417a5423fab1f6c6ee95627f3b4e8 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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ST25R3920B-AQWT STMicroelectronics st25r3920b.pdf Category: Unclassified
Description: ST25R3920B-AQWT
auf Bestellung 11963 Stücke:
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T1635H-6T T1635H-6T STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B59309BAC2E820C4&compId=T1635H-6T.pdf?ci_sign=0082dedc284ca9f2c7f0ac85cb310357ea1b7347 Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
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52+1.4 EUR
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T1635H-6G T1635H-6G STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EA802CACE43E745&compId=T1635H%2CT1650H.pdf?ci_sign=7d34359e016bcc7f3c8bbc269aa5ed60c93a7f25 Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
Produkt ist nicht verfügbar
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T1635H-6G-TR STMicroelectronics en.CD00161188.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Produkt ist nicht verfügbar
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T1635H-6I STMicroelectronics en.CD00161188.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Produkt ist nicht verfügbar
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T1635H-8G-TR STMicroelectronics t1635h-8g.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Produkt ist nicht verfügbar
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T1635H-8G STMicroelectronics t1635h-8g.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Produkt ist nicht verfügbar
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T1635H-8I STMicroelectronics t1635h-8i.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 160A
Mounting: THT
Max. forward voltage: 1.3V
auf Bestellung 1000 Stücke:
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T3050H-6T T3050H-6T STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EA7D1B524704745&compId=T3035H%2CT3050H.pdf?ci_sign=027e7b4d9a67bc33ebd5c03c7d6cd3e85eff4cb6 Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Technology: Snubberless™
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25+2.92 EUR
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42+1.72 EUR
50+1.66 EUR
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T3050H-6I STMicroelectronics en.CD00263568.pdf Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: TO220ABIns
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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T3050H-6G STMicroelectronics en.CD00263568.pdf Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
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T3050H-6G-TR STMicroelectronics en.CD00263568.pdf Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BULD118D-1 BULD118D-1 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2E13820&compId=buld118d.pdf?ci_sign=b2b836be69c3ae4ca3045ac9114405f7887516e2 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 2A
Power dissipation: 20W
Case: TO251
Mounting: THT
Kind of package: tube
Current gain: 50
auf Bestellung 108 Stücke:
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69+1.04 EUR
88+0.82 EUR
102+0.71 EUR
108+0.66 EUR
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SM6T220CA SM6T220CA STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 2A
Tolerance: ±5%
Max. off-state voltage: 188V
Breakdown voltage: 220V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
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500+0.25 EUR
1000+0.22 EUR
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STM32H725ZET6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8D9EAA63B03440D5&compId=stm32h725ae.pdf?ci_sign=5ba11f101f06dea6e568917729e9454378aa3767 Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 512kB FLASH; 564kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
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STM32H733ZGT6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8D9EB13DEACCA0D5&compId=stm32h733vg.pdf?ci_sign=fa7fae75888b4cc1028c4e6ff16d62fc27e78d87 Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32H733VGH6 STM32H733VGH6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8D9EB13DEACCA0D5&compId=stm32h733vg.pdf?ci_sign=fa7fae75888b4cc1028c4e6ff16d62fc27e78d87 Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; TFBGA129; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: TFBGA129
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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TS3431AILT TS3431AILT STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BD3A904EE0D2&compId=ts3431.pdf?ci_sign=d02285065027950a6a606c9ab52566bd4839d25c Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 1.24...24V
Kind of package: reel; tape
Maximum output current: 0.1A
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218+0.33 EUR
313+0.23 EUR
353+0.2 EUR
404+0.18 EUR
432+0.17 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 218
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SMBJ154A-TR STMicroelectronics cd00001366.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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385+0.19 EUR
414+0.17 EUR
455+0.16 EUR
500+0.14 EUR
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LSM6DSO32TR STMicroelectronics lsm6dso32.pdf Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; SMD,SMT; -40÷85°C
Operating temperature: -40...85°C
Type of sensor: accelerometer
Mounting: SMD; SMT
auf Bestellung 15808 Stücke:
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5000+3.75 EUR
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TN22-1500H TN22-1500H STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BAB40C7AE0D2&compId=tn22.pdf?ci_sign=3a8429a94c6899bc1315e89b79c629635111afa4 Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 2A; 1.8A; Igt: 1.5mA; IPAK; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 2A
Load current: 1.8A
Gate current: 1.5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
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29+2.5 EUR
45+1.6 EUR
75+1.15 EUR
150+1.04 EUR
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ESDCAN01-2BLY ESDCAN01-2BLY STMicroelectronics en.DM00207446.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 30pF
Application: automotive industry
Version: ESD
auf Bestellung 1238 Stücke:
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625+0.11 EUR
758+0.094 EUR
908+0.079 EUR
1007+0.071 EUR
1073+0.067 EUR
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STB12NM50T4 STMicroelectronics en.CD00002079.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 550V; 12A; 160W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
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1000+2.19 EUR
Mindestbestellmenge: 1000
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ESDA7P60-1U1M STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B98CC57AE7E0D2&compId=esda7p60-1u1m.pdf?ci_sign=113b0ee0a71d1ec3b8a0a2f1d4ab03ee013ffa79 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 700W; 6.8V; 60A; unidirectional; QFN1610; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 700W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Case: QFN1610
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE250A 1.5KE250A STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE588AB71DE5CABC469&compId=1.5KE100A.pdf?ci_sign=1c2df97ff47c44e9d04a40563cb02cd29cfa5687 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 250V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 213V
Breakdown voltage: 250V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
88+0.82 EUR
122+0.59 EUR
Mindestbestellmenge: 70
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STF5N95K5 en.DM00084492.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STI4N62K3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E95A3DC85EE745&compId=STD4N62K3.pdf?ci_sign=6dfa425ea571eea9705ad043b988cf974ef7f395
STI4N62K3
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
186+0.39 EUR
Mindestbestellmenge: 122
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STD4N62K3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E95A3DC85EE745&compId=STD4N62K3.pdf?ci_sign=6dfa425ea571eea9705ad043b988cf974ef7f395
STD4N62K3
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STU4N62K3 en.CD00274723.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance:
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.62 EUR
Mindestbestellmenge: 150
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2STR2230 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B98AFEB92100D2&compId=2str2230.pdf?ci_sign=215c923424f91d3a397c37a8d71d0ed36c3e33d4
2STR2230
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 70...560
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
161+0.45 EUR
235+0.3 EUR
278+0.26 EUR
500+0.18 EUR
Mindestbestellmenge: 117
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STD4NK60Z-1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A6450DF300D2&compId=std4nk60z-1.pdf?ci_sign=edabe8b3b66fc66c2e6cad4089c2a28265b7d778
STD4NK60Z-1
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
111+0.64 EUR
149+0.48 EUR
164+0.44 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
STB4NK60Z-1 en.CD00003002.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.71 EUR
Mindestbestellmenge: 150
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TCPP01-M12 dm00595160.pdf
Hersteller: STMicroelectronics
Category: Unclassified
Description: TCPP01-M12
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
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STP17NK40ZFP pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AB42C1D3450C745&compId=STP17NK40ZFP.pdf?ci_sign=44e4e0320e547af0d7238266f8a799022b326249
STP17NK40ZFP
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
20+3.65 EUR
Mindestbestellmenge: 16
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STP19NF20 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D6DF3DB004A745&compId=STB19NF20.pdf?ci_sign=4c18bb9b395d1f32d3f234a4baa51d6f20ae8937
STP19NF20
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
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DALC208SC6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBA869557E9B3E28&compId=DALC208.pdf?ci_sign=27290afdc3d57c4f6f0e6918d622c1c1beee2b0c
DALC208SC6
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
auf Bestellung 3598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
193+0.37 EUR
218+0.33 EUR
302+0.24 EUR
345+0.21 EUR
414+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 162
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STP5NK60Z en.CD00003042.pdf
STP5NK60Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
89+0.81 EUR
96+0.75 EUR
100+0.72 EUR
Mindestbestellmenge: 81
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SM6T33CA pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a
SM6T33CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 11084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
182+0.39 EUR
204+0.35 EUR
269+0.27 EUR
305+0.23 EUR
363+0.2 EUR
500+0.17 EUR
1000+0.15 EUR
2500+0.12 EUR
Mindestbestellmenge: 148
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SM6T36A pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a
SM6T36A
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
300+0.24 EUR
321+0.22 EUR
343+0.21 EUR
368+0.19 EUR
400+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 264
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SM6T33CAY pVersion=0046&contRep=ZT&docId=005056AB82531ED9A5CBFC6AB36D3820&compId=SM6TxxY.pdf?ci_sign=d7cb0a2306b640a208529662b96dbcd1761813a9
SM6T33CAY
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 22695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
205+0.35 EUR
247+0.29 EUR
265+0.27 EUR
500+0.26 EUR
1000+0.24 EUR
2500+0.22 EUR
5000+0.21 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SM6T36CA pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C98DF88C6F8469&compId=SM6T150CA.pdf?ci_sign=34df2426849dc9a7f94977dfc3c17d2f2f871415
SM6T36CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1519 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
148+0.48 EUR
202+0.35 EUR
225+0.32 EUR
247+0.29 EUR
500+0.23 EUR
1000+0.21 EUR
1500+0.16 EUR
Mindestbestellmenge: 125
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SM6T24A pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a
SM6T24A
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
161+0.45 EUR
233+0.31 EUR
274+0.26 EUR
334+0.21 EUR
500+0.18 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
SM6T200A pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a
SM6T200A
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
143+0.5 EUR
158+0.45 EUR
204+0.35 EUR
230+0.31 EUR
272+0.26 EUR
500+0.23 EUR
1000+0.2 EUR
2500+0.17 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
SM6T12CA pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C98DF88C6F8469&compId=SM6T150CA.pdf?ci_sign=34df2426849dc9a7f94977dfc3c17d2f2f871415
SM6T12CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
211+0.34 EUR
234+0.31 EUR
304+0.24 EUR
343+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SM6T220A pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a
SM6T220A
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
205+0.35 EUR
226+0.32 EUR
281+0.25 EUR
307+0.23 EUR
343+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
2500+0.17 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SM6T36CAY pVersion=0046&contRep=ZT&docId=005056AB90B41ED9ACB9DA622F87C0C2&compId=SM6T36CAY.pdf?ci_sign=1c3f690ab0b5e9e3862bf1cd0693369452dfd1eb
SM6T36CAY
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
127+0.56 EUR
139+0.52 EUR
161+0.44 EUR
199+0.36 EUR
250+0.33 EUR
Mindestbestellmenge: 114
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STP65N045M9 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8CEB184FFF480D4&compId=stp65n045m9.pdf?ci_sign=e3545100f8460ef4bece0288baa21d3caa03066d
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP65N150M9 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8CEAE88C405A0D4&compId=stp65n150m9.pdf?ci_sign=554d7d0395316ed43778a26e6b03b6f61597a360
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM2903WHYST pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B99F7A85CA00D2&compId=lm2903wh.pdf?ci_sign=a5954f8e83234ef1c7f4ed7a26ca2f61ede6a9e1
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSV912HYDT pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9CBED9AF960D2&compId=tsv912h.pdf?ci_sign=8401448b75c3fa76d22032a2106f742a9304054c
TSV912HYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
Produkt ist nicht verfügbar
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STM32F413MHY6TR en.DM00282249.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F423MHY3TR stm32f423mh.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F423MHY6TR en.DM00282247.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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T1010H-6G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B5929F26E612A0C4&compId=T1010H-6G.pdf?ci_sign=47562eabfe72ff0f77f92f34bf9a274ffc3c04c8
T1010H-6G
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Produkt ist nicht verfügbar
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T1010H-6G-TR en.CD00235248.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Produkt ist nicht verfügbar
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STD85N10F7AG en.DM00136911.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.19 EUR
Mindestbestellmenge: 2500
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TMBYV10-60FILM pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B9C2A45CA0D2&compId=tmbyv10-60.pdf?ci_sign=940b6944878f7e56a7c53d22b4d29a6a109ff764
TMBYV10-60FILM
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
232+0.31 EUR
254+0.28 EUR
365+0.2 EUR
443+0.16 EUR
532+0.13 EUR
Mindestbestellmenge: 200
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STGB10NB40LZT4 en.DM00372350.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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VNS14NV04PTR-E en.CD00230007.pdf
VNS14NV04PTR-E
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
Produkt ist nicht verfügbar
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M95P32-IXMNT/E pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818C19FB86B5E0D5&compId=m95p32-i.pdf?ci_sign=5e683c88528417a5423fab1f6c6ee95627f3b4e8
M95P32-IXMNT/E
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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ST25R3920B-AQWT st25r3920b.pdf
Hersteller: STMicroelectronics
Category: Unclassified
Description: ST25R3920B-AQWT
auf Bestellung 11963 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+5.53 EUR
Mindestbestellmenge: 4000
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T1635H-6T pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B59309BAC2E820C4&compId=T1635H-6T.pdf?ci_sign=0082dedc284ca9f2c7f0ac85cb310357ea1b7347
T1635H-6T
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
52+1.4 EUR
57+1.26 EUR
Mindestbestellmenge: 40
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T1635H-6G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EA802CACE43E745&compId=T1635H%2CT1650H.pdf?ci_sign=7d34359e016bcc7f3c8bbc269aa5ed60c93a7f25
T1635H-6G
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
Produkt ist nicht verfügbar
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T1635H-6G-TR en.CD00161188.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Produkt ist nicht verfügbar
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T1635H-6I en.CD00161188.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Produkt ist nicht verfügbar
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T1635H-8G-TR t1635h-8g.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Produkt ist nicht verfügbar
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T1635H-8G t1635h-8g.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Produkt ist nicht verfügbar
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T1635H-8I t1635h-8i.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 160A
Mounting: THT
Max. forward voltage: 1.3V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.02 EUR
Mindestbestellmenge: 100
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T3050H-6T pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EA7D1B524704745&compId=T3035H%2CT3050H.pdf?ci_sign=027e7b4d9a67bc33ebd5c03c7d6cd3e85eff4cb6
T3050H-6T
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Technology: Snubberless™
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
29+2.52 EUR
36+2.03 EUR
42+1.72 EUR
50+1.66 EUR
Mindestbestellmenge: 25
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T3050H-6I en.CD00263568.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: TO220ABIns
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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T3050H-6G en.CD00263568.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
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T3050H-6G-TR en.CD00263568.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BULD118D-1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2E13820&compId=buld118d.pdf?ci_sign=b2b836be69c3ae4ca3045ac9114405f7887516e2
BULD118D-1
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 2A
Power dissipation: 20W
Case: TO251
Mounting: THT
Kind of package: tube
Current gain: 50
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
88+0.82 EUR
102+0.71 EUR
108+0.66 EUR
Mindestbestellmenge: 69
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SM6T220CA pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F5A80ED0FF2469&compId=SM6T.pdf?ci_sign=b4cc37de6a9ab7836259fa8b0bf5d2b83035cd4a
SM6T220CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 2A
Tolerance: ±5%
Max. off-state voltage: 188V
Breakdown voltage: 220V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
auf Bestellung 2012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
129+0.56 EUR
144+0.5 EUR
191+0.38 EUR
216+0.33 EUR
256+0.28 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 105
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STM32H725ZET6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8D9EAA63B03440D5&compId=stm32h725ae.pdf?ci_sign=5ba11f101f06dea6e568917729e9454378aa3767
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 512kB FLASH; 564kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32H733ZGT6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8D9EB13DEACCA0D5&compId=stm32h733vg.pdf?ci_sign=fa7fae75888b4cc1028c4e6ff16d62fc27e78d87
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32H733VGH6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8D9EB13DEACCA0D5&compId=stm32h733vg.pdf?ci_sign=fa7fae75888b4cc1028c4e6ff16d62fc27e78d87
STM32H733VGH6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; TFBGA129; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 80
Case: TFBGA129
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Produkt ist nicht verfügbar
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TS3431AILT pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BD3A904EE0D2&compId=ts3431.pdf?ci_sign=d02285065027950a6a606c9ab52566bd4839d25c
TS3431AILT
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 1.24...24V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
313+0.23 EUR
353+0.2 EUR
404+0.18 EUR
432+0.17 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 218
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SMBJ154A-TR cd00001366.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 180V; 2.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
385+0.19 EUR
414+0.17 EUR
455+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 334
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LSM6DSO32TR lsm6dso32.pdf
Hersteller: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; SMD,SMT; -40÷85°C
Operating temperature: -40...85°C
Type of sensor: accelerometer
Mounting: SMD; SMT
auf Bestellung 15808 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+3.75 EUR
Mindestbestellmenge: 5000
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TN22-1500H pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9BAB40C7AE0D2&compId=tn22.pdf?ci_sign=3a8429a94c6899bc1315e89b79c629635111afa4
TN22-1500H
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 2A; 1.8A; Igt: 1.5mA; IPAK; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 2A
Load current: 1.8A
Gate current: 1.5mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
45+1.6 EUR
75+1.15 EUR
150+1.04 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
ESDCAN01-2BLY en.DM00207446.pdf
ESDCAN01-2BLY
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; SOT23; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 30pF
Application: automotive industry
Version: ESD
auf Bestellung 1238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
908+0.079 EUR
1007+0.071 EUR
1073+0.067 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
STB12NM50T4 en.CD00002079.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 550V; 12A; 160W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MDmesh™
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.19 EUR
Mindestbestellmenge: 1000
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ESDA7P60-1U1M pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B98CC57AE7E0D2&compId=esda7p60-1u1m.pdf?ci_sign=113b0ee0a71d1ec3b8a0a2f1d4ab03ee013ffa79
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 700W; 6.8V; 60A; unidirectional; QFN1610; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 700W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Case: QFN1610
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE250A pVersion=0046&contRep=ZT&docId=005056AB752F1EE588AB71DE5CABC469&compId=1.5KE100A.pdf?ci_sign=1c2df97ff47c44e9d04a40563cb02cd29cfa5687
1.5KE250A
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 250V; 5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 213V
Breakdown voltage: 250V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
88+0.82 EUR
122+0.59 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
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