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TLP293-4(MBGBTPE TLP293-4(MBGBTPE Toshiba Semiconductor and Storage docget.jsp?did=15287&prodName=TLP293-4 Description: OPTOISOLATOR 3.75KV TRANS SO16
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TLP293-4(MBHATLE TLP293-4(MBHATLE Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TLP293-4 Description: OPTOISOLATOR 3.75KV TRANS SO16
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TLP293-4(TP,E TLP293-4(TP,E Toshiba Semiconductor and Storage docget.jsp?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 81692 Stücke:
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100+1.7 EUR
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TLP293-4(TPR,E TLP293-4(TPR,E Toshiba Semiconductor and Storage TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3805 Stücke:
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TLP293-4(V4GBTPE TLP293-4(V4GBTPE Toshiba Semiconductor and Storage docget.jsp?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP293-4(V4GBTRE TLP293-4(V4GBTRE Toshiba Semiconductor and Storage TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2175 Stücke:
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10+2.2 EUR
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TLP293-4(V4LATPE TLP293-4(V4LATPE Toshiba Semiconductor and Storage docget.jsp?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3946 Stücke:
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10+2.26 EUR
100+1.7 EUR
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TLP293-4(V4LATRE TLP293-4(V4LATRE Toshiba Semiconductor and Storage TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP293-4(V4-TP,E TLP293-4(V4-TP,E Toshiba Semiconductor and Storage docget.jsp?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5750 Stücke:
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10+2.2 EUR
100+1.67 EUR
500+1.43 EUR
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TLP293-4(V4-TR,E TLP293-4(V4-TR,E Toshiba Semiconductor and Storage TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4 Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6473 Stücke:
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100+1.67 EUR
500+1.43 EUR
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TLP293-4(MBHATLE TLP293-4(MBHATLE Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TLP293-4 Description: OPTOISOLATOR 3.75KV TRANS SO16
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TH58NVG3S0HTAI0 TH58NVG3S0HTAI0 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TH58NVG3S0HTAI0 Description: IC EEPROM 8GBIT 25NS 48TSOP
auf Bestellung 89 Stücke:
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TB62781FNG,C8,EL TB62781FNG,C8,EL Toshiba Semiconductor and Storage TB62781FNG.pdf Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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TJ20A10M3(STA4,Q,M TJ20A10M3(STA4,Q,M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TJ20A10M3 Description: MOSFET P-CH 100V 20A TO220SIS-3
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TJ9A10M3,S4Q(M TJ9A10M3,S4Q(M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TJ9A10M3 Description: MOSFET P-CH 100V 9A TO220SIS-3
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TJ11A10M3,S5Q(M TJ11A10M3,S5Q(M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TJ11A10M3 Description: MOSFET P-CH 100V 11A TO220SIS-3
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TB2941HQ(O) TB2941HQ(O) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB2941HQ Description: IC AMP BTL AUDIO 4CH
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TB62781FNG,C8,EL TB62781FNG,C8,EL Toshiba Semiconductor and Storage TB62781FNG.pdf Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5625 Stücke:
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10+3.37 EUR
25+3.18 EUR
100+2.7 EUR
250+2.53 EUR
500+2.23 EUR
1000+1.84 EUR
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1SS427,L3M 1SS427,L3M Toshiba Semiconductor and Storage docget.jsp?did=11149&prodName=1SS427 Description: DIODE STANDARD 80V 100MA SOD923
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
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10000+0.05 EUR
30000+0.049 EUR
50000+0.045 EUR
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CBS10S30,L3F CBS10S30,L3F Toshiba Semiconductor and Storage docget.jsp?did=14076&prodName=CBS10S30 Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40,L3F Toshiba Semiconductor and Storage CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40 Description: DIODE SCHOTTKY 40V 1A CST2B
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: CST2B
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F DF2B12M2SC,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 10 Stücke:
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SSM3K15ACT,L3F SSM3K15ACT,L3F Toshiba Semiconductor and Storage docget.jsp?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6K403TU,LF SSM6K403TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10947&prodName=SSM6K403TU Description: MOSFET N-CH 20V 4.2A UF6
Produkt ist nicht verfügbar
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T2N7002AK,LM T2N7002AK,LM Toshiba Semiconductor and Storage docget.jsp?did=29712&prodName=T2N7002AK Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 371240 Stücke:
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3000+0.057 EUR
6000+0.05 EUR
9000+0.048 EUR
15000+0.044 EUR
21000+0.042 EUR
30000+0.039 EUR
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TC4W53FU,LF TC4W53FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20175&prodName=TC4W53FU Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
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3000+0.23 EUR
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TCR5AM10,LF TCR5AM10,LF Toshiba Semiconductor and Storage TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS427,L3M 1SS427,L3M Toshiba Semiconductor and Storage docget.jsp?did=11149&prodName=1SS427 Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 81387 Stücke:
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67+0.31 EUR
96+0.21 EUR
137+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
5000+0.075 EUR
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CBS10S30,L3F CBS10S30,L3F Toshiba Semiconductor and Storage docget.jsp?did=14076&prodName=CBS10S30 Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40,L3F Toshiba Semiconductor and Storage CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40 Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F DF2B12M2SC,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC Description: TVS DIODE 8VWM 18VC SC2
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SSM3K15ACT,L3F SSM3K15ACT,L3F Toshiba Semiconductor and Storage docget.jsp?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
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SSM6K403TU,LF SSM6K403TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10947&prodName=SSM6K403TU Description: MOSFET N-CH 20V 4.2A UF6
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SSM6K411TU(TE85L,F SSM6K411TU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU Description: MOSFET N-CH 20V 10A
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T2N7002AK,LM T2N7002AK,LM Toshiba Semiconductor and Storage docget.jsp?did=29712&prodName=T2N7002AK Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
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192+0.11 EUR
500+0.08 EUR
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TC4W53FU,LF TC4W53FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20175&prodName=TC4W53FU Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
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TCR5AM10,LF TCR5AM10,LF Toshiba Semiconductor and Storage TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F DF2B12M2SC,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC Description: TVS DIODE 8VWM 18VC SC2
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SSM6K411TU(TE85L,F SSM6K411TU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU Description: MOSFET N-CH 20V 10A
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SSM6K411TU(TE85L,F SSM6K411TU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU Description: MOSFET N-CH 20V 10A
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TPH1R712MD,L1Q TPH1R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14889&prodName=TPH1R712MD Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
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TPN4R712MD,L1Q TPN4R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=28741&prodName=TPN4R712MD Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
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TPH1R712MD,L1Q TPH1R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14889&prodName=TPH1R712MD Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 28063 Stücke:
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5+4.46 EUR
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TPN4R712MD,L1Q TPN4R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=28741&prodName=TPN4R712MD Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 9110 Stücke:
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10+2.32 EUR
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B Toshiba Semiconductor and Storage TL1L4-DW0,L4A5B.pdf Description: POWER LED WHT 6500K 3535
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B Toshiba Semiconductor and Storage TL1L4-NT0,L4A5B.pdf Description: POWER LED WHT 5700K 3535
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B Toshiba Semiconductor and Storage TL1L4-NW0,L4A5B.pdf Description: POWER LED WHT 5000K 3535
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B Toshiba Semiconductor and Storage TL1L4-WH0,L4A5B.pdf Description: POWER LED WHT 4000K 3535
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TL2WU-DWJ,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L Description: LED WHITE 65MW CSP 0603
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B Toshiba Semiconductor and Storage TL1L4-DW0,L4A5B.pdf Description: POWER LED WHT 6500K 3535
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B Toshiba Semiconductor and Storage TL1L4-NT0,L4A5B.pdf Description: POWER LED WHT 5700K 3535
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B Toshiba Semiconductor and Storage TL1L4-NW0,L4A5B.pdf Description: POWER LED WHT 5000K 3535
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B Toshiba Semiconductor and Storage TL1L4-WH0,L4A5B.pdf Description: POWER LED WHT 4000K 3535
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TL2WU-DWJ,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L Description: LED WHITE 65MW CSP 0603
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B Toshiba Semiconductor and Storage TL1L4-DW0,L4A5B.pdf Description: POWER LED WHT 6500K 3535
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B Toshiba Semiconductor and Storage TL1L4-NT0,L4A5B.pdf Description: POWER LED WHT 5700K 3535
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B Toshiba Semiconductor and Storage TL1L4-NW0,L4A5B.pdf Description: POWER LED WHT 5000K 3535
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B Toshiba Semiconductor and Storage TL1L4-WH0,L4A5B.pdf Description: POWER LED WHT 4000K 3535
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TL2WU-DWJ,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L Description: LED WHITE 65MW CSP 0603
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2SC4117-BL,LF 2SC4117-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19294&prodName=2SC4117 Description: TRANS NPN 120V 0.1A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 66000 Stücke:
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6000+0.063 EUR
9000+0.06 EUR
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TLP293-4(MBGBTPE docget.jsp?did=15287&prodName=TLP293-4
TLP293-4(MBGBTPE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
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TLP293-4(MBHATLE docget.jsp?type=datasheet&lang=en&pid=TLP293-4
TLP293-4(MBHATLE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
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TLP293-4(TP,E docget.jsp?did=15287&prodName=TLP293-4
TLP293-4(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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7+3.19 EUR
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100+1.7 EUR
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TLP293-4(TPR,E TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4
TLP293-4(TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3805 Stücke:
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7+3.09 EUR
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TLP293-4(V4GBTPE docget.jsp?did=15287&prodName=TLP293-4
TLP293-4(V4GBTPE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 24675 Stücke:
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7+3.19 EUR
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100+1.7 EUR
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TLP293-4(V4GBTRE TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4
TLP293-4(V4GBTRE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2175 Stücke:
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7+3.09 EUR
10+2.2 EUR
100+1.67 EUR
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TLP293-4(V4LATPE docget.jsp?did=15287&prodName=TLP293-4
TLP293-4(V4LATPE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3946 Stücke:
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AnzahlPrivatkunde
7+3.19 EUR
10+2.26 EUR
100+1.7 EUR
500+1.46 EUR
1000+1.38 EUR
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TLP293-4(V4LATRE TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4
TLP293-4(V4LATRE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
7+3.09 EUR
10+2.2 EUR
100+1.67 EUR
500+1.43 EUR
1000+1.36 EUR
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TLP293-4(V4-TP,E docget.jsp?did=15287&prodName=TLP293-4
TLP293-4(V4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
10+2.2 EUR
100+1.67 EUR
500+1.43 EUR
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TLP293-4(V4-TR,E TLP293-4_datasheet_en_20190520.pdf?did=15287&prodName=TLP293-4
TLP293-4(V4-TR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6473 Stücke:
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7+3.09 EUR
10+2.2 EUR
100+1.67 EUR
500+1.43 EUR
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TLP293-4(MBHATLE docget.jsp?type=datasheet&lang=en&pid=TLP293-4
TLP293-4(MBHATLE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
auf Bestellung 5026 Stücke:
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TH58NVG3S0HTAI0 docget.jsp?type=datasheet&lang=en&pid=TH58NVG3S0HTAI0
TH58NVG3S0HTAI0
Hersteller: Toshiba Semiconductor and Storage
Description: IC EEPROM 8GBIT 25NS 48TSOP
auf Bestellung 89 Stücke:
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TB62781FNG,C8,EL TB62781FNG.pdf
TB62781FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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2000+1.71 EUR
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TJ20A10M3(STA4,Q,M docget.jsp?type=datasheet&lang=en&pid=TJ20A10M3
TJ20A10M3(STA4,Q,M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 20A TO220SIS-3
Produkt ist nicht verfügbar
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TJ9A10M3,S4Q(M docget.jsp?type=datasheet&lang=en&pid=TJ9A10M3
TJ9A10M3,S4Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 9A TO220SIS-3
Produkt ist nicht verfügbar
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TJ11A10M3,S5Q(M docget.jsp?type=datasheet&lang=en&pid=TJ11A10M3
TJ11A10M3,S5Q(M
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 11A TO220SIS-3
Produkt ist nicht verfügbar
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TB2941HQ(O) docget.jsp?type=datasheet&lang=en&pid=TB2941HQ
TB2941HQ(O)
Hersteller: Toshiba Semiconductor and Storage
Description: IC AMP BTL AUDIO 4CH
auf Bestellung 846 Stücke:
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TB62781FNG,C8,EL TB62781FNG.pdf
TB62781FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 20-SSOP
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 9
Mounting Type: Surface Mount
Voltage - Output: 28V
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5625 Stücke:
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6+3.75 EUR
10+3.37 EUR
25+3.18 EUR
100+2.7 EUR
250+2.53 EUR
500+2.23 EUR
1000+1.84 EUR
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1SS427,L3M docget.jsp?did=11149&prodName=1SS427
1SS427,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SOD923
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.05 EUR
30000+0.049 EUR
50000+0.045 EUR
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CBS10S30,L3F docget.jsp?did=14076&prodName=CBS10S30
CBS10S30,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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CBS10S40,L3F CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40
CBS10S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: CST2B
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DF2B12M2SC,L3F docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC
DF2B12M2SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 10 Stücke:
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Mindestbestellmenge: 10 Stücke
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SSM3K15ACT,L3F docget.jsp?did=5867&prodName=SSM3K15ACT
SSM3K15ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6K403TU,LF docget.jsp?did=10947&prodName=SSM6K403TU
SSM6K403TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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T2N7002AK,LM docget.jsp?did=29712&prodName=T2N7002AK
T2N7002AK,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 371240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.057 EUR
6000+0.05 EUR
9000+0.048 EUR
15000+0.044 EUR
21000+0.042 EUR
30000+0.039 EUR
Mindestbestellmenge: 3000 Stücke
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TC4W53FU,LF docget.jsp?did=20175&prodName=TC4W53FU
TC4W53FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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TCR5AM10,LF TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12
TCR5AM10,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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1SS427,L3M docget.jsp?did=11149&prodName=1SS427
1SS427,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 81387 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
96+0.21 EUR
137+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
2000+0.087 EUR
5000+0.075 EUR
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CBS10S30,L3F docget.jsp?did=14076&prodName=CBS10S30
CBS10S30,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40
CBS10S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC
DF2B12M2SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 9850 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K15ACT,L3F docget.jsp?did=5867&prodName=SSM3K15ACT
SSM3K15ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 4746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
68+0.31 EUR
109+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 42 Stücke
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SSM6K403TU,LF docget.jsp?did=10947&prodName=SSM6K403TU
SSM6K403TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
auf Bestellung 13 Stücke:
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SSM6K411TU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU
SSM6K411TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
auf Bestellung 5509 Stücke:
Lieferzeit 10-14 Tag (e)
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T2N7002AK,LM docget.jsp?did=29712&prodName=T2N7002AK
T2N7002AK,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 371296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
118+0.18 EUR
192+0.11 EUR
500+0.08 EUR
1000+0.069 EUR
Mindestbestellmenge: 72 Stücke
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TC4W53FU,LF docget.jsp?did=20175&prodName=TC4W53FU
TC4W53FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
auf Bestellung 33895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
56+0.38 EUR
63+0.33 EUR
100+0.29 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 39 Stücke
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TCR5AM10,LF TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12
TCR5AM10,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Current - Supply (Max): 68 µA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC
DF2B12M2SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 9850 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6K411TU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU
SSM6K411TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
auf Bestellung 5509 Stücke:
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SSM6K411TU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU
SSM6K411TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
auf Bestellung 3000 Stücke:
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Mindestbestellmenge: 3000 Stücke
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TPH1R712MD,L1Q docget.jsp?did=14889&prodName=TPH1R712MD
TPH1R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.2 EUR
10000+1.14 EUR
Mindestbestellmenge: 5000 Stücke
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TPN4R712MD,L1Q docget.jsp?did=28741&prodName=TPN4R712MD
TPN4R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.56 EUR
Mindestbestellmenge: 5000 Stücke
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TPH1R712MD,L1Q docget.jsp?did=14889&prodName=TPH1R712MD
TPH1R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 28063 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.46 EUR
10+2.86 EUR
100+1.94 EUR
500+1.55 EUR
1000+1.43 EUR
2000+1.4 EUR
Mindestbestellmenge: 5 Stücke
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TPN4R712MD,L1Q docget.jsp?did=28741&prodName=TPN4R712MD
TPN4R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 9110 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
2000+0.62 EUR
Mindestbestellmenge: 10 Stücke
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B.pdf
TL1L4-DW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B.pdf
TL1L4-NT0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B.pdf
TL1L4-NW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B.pdf
TL1L4-WH0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
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TL2WU-DWJ,L docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B.pdf
TL1L4-DW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B.pdf
TL1L4-NT0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B.pdf
TL1L4-NW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B.pdf
TL1L4-WH0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
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TL2WU-DWJ,L docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B.pdf
TL1L4-DW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B.pdf
TL1L4-NT0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B.pdf
TL1L4-NW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B.pdf
TL1L4-WH0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TL2WU-DWJ,L docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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2SC4117-BL,LF docget.jsp?did=19294&prodName=2SC4117
2SC4117-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.07 EUR
6000+0.063 EUR
9000+0.06 EUR
15000+0.055 EUR
21000+0.052 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000 Stücke
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