Die Produkte vishay general semiconductor - diodes division

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VS-43CTQ100PBF VS-43CTQ100PBF 43CTQ100PbF.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 100V TO220
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 810mV @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Packaging: Tube
Part Status: Obsolete
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VS-MBR6045WTPBF VS-MBR6045WTPBF vs-mbr6045wt-n3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 45V TO247AC
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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BAS70-05-E3-08 BAS70-05-E3-08 bas70.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 70V SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 5 ns
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SS10P2CL-M3/86A SS10P2CL-M3/86A ss10p3cl.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY SCHOTTKY 20V TO277A
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 850 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
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SMBJ20CD-M3/H SMBJ20CD-M3/H smbj5cdthrusmbj120cd.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 20VWM 32VC DO214AA
Voltage - Clamping (Max) @ Ipp: 32V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
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27+ 0.99 EUR
32+ 0.81 EUR
100+ 0.56 EUR
RS07G-M-08 RS07G-M-08 rs07bm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GP 400V 500MA DO219AB
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS07
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
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BZT52B24-E3-08 BZT52B24-E3-08 bzt52.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 24V 410MW SOD123
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100nA @ 18V
Impedance (Max) (Zzt): 28 Ohms
Power - Max: 410mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: BZT52B24
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SMBJ7.5D-M3/I SMBJ7.5D-M3/I smbj5cdthrusmbj120cd.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 7.5VWM 12.7VC DO214AA
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 47.2A
Voltage - Clamping (Max) @ Ipp: 12.7V
Voltage - Breakdown (Min): 8.46V
Voltage - Reverse Standoff (Typ): 7.5V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SS2FH10-M3/H SS2FH10-M3/H ss2fh10.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 2A DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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VT5202-M3/4W VT5202-M3/4W vt5202-m3.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 5A TO220AC
Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: VT5202
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Capacitance @ Vr, F: 1216pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
1N4148-TAP 1N4148-TAP 1n4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 300MA DO35
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
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10000+ 0.035 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 300MA DO35
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
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112+ 0.23 EUR
207+ 0.13 EUR
500+ 0.077 EUR
1000+ 0.053 EUR
2000+ 0.045 EUR
1N4148TR 1N4148TR 1n4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 300MA DO35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Reverse Recovery Time (trr): 8 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Packaging: Tape & Reel (TR)
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10000+ 0.035 EUR
30000+ 0.032 EUR
50000+ 0.028 EUR
100000+ 0.026 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 300MA DO35
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 300mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
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207+ 0.13 EUR
500+ 0.077 EUR
1000+ 0.053 EUR
2000+ 0.045 EUR
5000+ 0.041 EUR
1N4151TR 1N4151TR 1n4151.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA DO35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Supplier Device Package: DO-35 (DO-204AH)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA DO35
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
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67+ 0.39 EUR
75+ 0.35 EUR
137+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.08 EUR
2000+ 0.068 EUR
1N914TR 1N914TR 1n914.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 200MA DO35
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 200MA DO35
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-35 (DO-204AH)
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75+ 0.35 EUR
137+ 0.19 EUR
500+ 0.12 EUR
BAV21-TR BAV21-TR bav17.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 250MA DO35
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
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10000+ 0.064 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 250MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
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63+ 0.42 EUR
114+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.082 EUR
5000+ 0.074 EUR
1N4150TR 1N4150TR 1n4150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 300MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Current - Average Rectified (Io): 300mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Packaging: Tape & Reel (TR)
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10000+ 0.064 EUR
30000+ 0.058 EUR
50000+ 0.051 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 300MA DO35
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
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56+ 0.47 EUR
63+ 0.42 EUR
114+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.082 EUR
5000+ 0.074 EUR
LL4148-GS08 LL4148-GS08 ll4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 300MA SOD80
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA (DC)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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LS4148-GS08 LS4148-GS08 ls4148.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD80
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
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2500+ 0.078 EUR
5000+ 0.07 EUR
12500+ 0.061 EUR
25000+ 0.055 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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59+ 0.44 EUR
65+ 0.4 EUR
120+ 0.22 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
LL4150GS08 LL4150GS08 ll4150.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 300MA SOD80
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4002-E3/54 1N4002-E3/54 1n4001.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4003-E3/54 1N4003-E3/54 1n4001.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004-E3/54 1N4004-E3/54 1n4001.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5392-E3/54 1N5392-E3/54 1n5391.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1.5A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
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5500+ 0.15 EUR
11000+ 0.12 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1.5A DO204AL
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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Lieferzeit 21-28 Tag (e)
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34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N5395-E3/54 1N5395-E3/54 1n5391.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO204AL
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO204AL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1N5399-E3/54 1N5399-E3/54 1n5391.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1.5A DO204
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1.5A DO204
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
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Lieferzeit 21-28 Tag (e)
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28+ 0.94 EUR
34+ 0.78 EUR
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500+ 0.27 EUR
1N5397-E3/54 1N5397-E3/54 1n5221.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1.5A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
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Lieferzeit 21-28 Tag (e)
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28+ 0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N5393-E3/54 1N5393-E3/54 1n5391.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1.5A DO204AL
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1.5A DO204AL
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
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Lieferzeit 21-28 Tag (e)
28+ 0.94 EUR
34+ 0.78 EUR
1N5398-E3/54 1N5398-E3/54 1n5391.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 800V 1.5A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV103-GS08 BAV103-GS08 bav100.pdf техническая информация Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 250MA SOD80
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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BAV100-GS08 BAV100-GS08 bav100.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 250MA SOD80
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Diode Type: Standard
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 250MA SOD80
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 MiniMELF
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Lieferzeit 21-28 Tag (e)
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48+ 0.55 EUR
MMBD914-E3-08 MMBD914-E3-08 mmbd914.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 200MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004-E3/73 1N4004-E3/73 1n4001.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4003-E3/73 1N4003-E3/73 1n4001.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16-E3-08 BAS16-E3-08 bas16.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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IMBD4148-E3-08 IMBD4148-E3-08 imbd4148.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOT23
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N4934-E3/54 1N4934-E3/54 1n4933.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
30+ 0.88 EUR
40+ 0.65 EUR
100+ 0.37 EUR
1N4936-E3/54 1N4936-E3/54 1n4933.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4937-E3/54 1N4937-E3/54 1n4933.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4933-E3/54 1N4933-E3/54 1n4933.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 11000 Stücke
Lieferzeit 21-28 Tag (e)
5500+ 0.15 EUR
11000+ 0.13 EUR
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 1A DO204AL
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 14052 Stücke
Lieferzeit 21-28 Tag (e)
29+ 0.91 EUR
39+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N4935-E3/54 1N4935-E3/54 1n4933.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 49500 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
auf Bestellung 46 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49500 Stücke - Preis und Lieferfrist anzeigen
29+ 0.91 EUR
39+ 0.67 EUR
BA158-E3/54 BA158-E3/54 ba157.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 9290 Stücke
Lieferzeit 21-28 Tag (e)
BA159-E3/54 BA159-E3/54 ba157.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5395-E3/73 1N5395-E3/73 1n5391.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1.5A DO204AL
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148WS-E3-08 1N4148WS-E3-08 1n4148ws.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD323
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 124321 Stücke - Preis und Lieferfrist anzeigen
S1M-E3/5AT S1M-E3/5AT s1.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100874 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 2307 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100874 Stücke - Preis und Lieferfrist anzeigen
27+ 0.99 EUR
33+ 0.81 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N4150W-E3-08 1N4150W-E3-08 1n4150w.pdf Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7448 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
auf Bestellung 1689 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7448 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.54 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
SD101C-TR SD101C-TR sd101a.pdf Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 30MA DO35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 30V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Current - Average Rectified (Io): 30mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SD101
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 30MA DO35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 30V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Current - Average Rectified (Io): 30mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SD101
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 23098 Stücke
Lieferzeit 21-28 Tag (e)
GSOT36-HE3-08 GSOT36-HE3-08 gsot03.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 36VWM 71VC SOT23
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 248W
Voltage - Clamping (Max) @ Ipp: 71V
Voltage - Breakdown (Min): 39V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 52pF @ 1MHz
Applications: Automotive
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13238 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.23 EUR
6000+ 0.21 EUR
BZX84C24-E3-08 BZX84C24-E3-08 bzx84v.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 24V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 636 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7759 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
54+ 0.49 EUR
101+ 0.26 EUR
500+ 0.17 EUR
BZD27C30P-E3-08 BZD27C30P-E3-08 bzd27series.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 30V 800MW DO219AB
Base Part Number: BZD27C30
Current - Reverse Leakage @ Vr: 1µA @ 22V
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 800mW
Voltage - Zener (Nom) (Vz): 30V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
auf Bestellung 3336 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3060 Stücke - Preis und Lieferfrist anzeigen
SMBJ33AHE3/52 SMBJ33AHE3/52 smbj.pdf Vishay General Semiconductor - Diodes Division Description: TVS DIODE 33V 53.3V DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.3A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1151 Stücke - Preis und Lieferfrist anzeigen
1N5223B-TR 1N5223B-TR 1n5221.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 2.7V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
auf Bestellung 43171 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
TZM5242B-GS08 TZM5242B-GS08 tzq5221b.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 500MW SOD80
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZM5242
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19602 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 500MW SOD80
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZM5242
auf Bestellung 866 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19602 Stücke - Preis und Lieferfrist anzeigen
TZM5230B-GS08 TZM5230B-GS08 tzm5221.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.7V 500MW SOD80
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 37351 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.7V 500MW SOD80
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
auf Bestellung 1803 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37351 Stücke - Preis und Lieferfrist anzeigen
46+ 0.57 EUR
54+ 0.48 EUR
102+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
TZM5232B-GS08 TZM5232B-GS08 tzm5221.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 45061 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 5.6V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 2795 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 45061 Stücke - Preis und Lieferfrist anzeigen
TZM5234B-GS08 TZM5234B-GS08 tzm5221.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 6.2V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 102500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11571 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 6.2V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 103969 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11571 Stücke - Preis und Lieferfrist anzeigen
TZMC12-GS08 TZMC12-GS08 tzm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 500MW SOD80
Base Part Number: TZMC12
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 9.1V
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 45000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 206901 Stücke - Preis und Lieferfrist anzeigen
Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 500MW SOD80
Base Part Number: TZMC12
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 9.1V
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 46035 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 206901 Stücke - Preis und Lieferfrist anzeigen
TZMC3V3-GS08 TZMC3V3-GS08 tzm.pdf Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 180811 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.11 EUR
5000+ 0.091 EUR
12500+ 0.078 EUR
VS-43CTQ100PBF 43CTQ100PbF.pdf
VS-43CTQ100PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO220
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 1mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 810mV @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
VS-MBR6045WTPBF vs-mbr6045wt-n3.pdf
VS-MBR6045WTPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO247AC
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS70-05-E3-08 bas70.pdf
BAS70-05-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 70V SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 5 ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46725 Stücke - Preis und Lieferfrist anzeigen
SS10P2CL-M3/86A ss10p3cl.pdf
SS10P2CL-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 20V TO277A
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 850 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2387 Stücke - Preis und Lieferfrist anzeigen
SMBJ20CD-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ20CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32VC DO214AA
Voltage - Clamping (Max) @ Ipp: 32V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 18.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
auf Bestellung 7616 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14396 Stücke - Preis und Lieferfrist anzeigen
27+ 0.99 EUR
32+ 0.81 EUR
100+ 0.56 EUR
RS07G-M-08 rs07bm.pdf
RS07G-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 500MA DO219AB
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS07
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
auf Bestellung 8038 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 87719 Stücke - Preis und Lieferfrist anzeigen
BZT52B24-E3-08 bzt52.pdf
BZT52B24-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 410MW SOD123
Operating Temperature: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 100nA @ 18V
Impedance (Max) (Zzt): 28 Ohms
Power - Max: 410mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 24V
Part Status: Active
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: BZT52B24
auf Bestellung 21249 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23460 Stücke - Preis und Lieferfrist anzeigen
SMBJ7.5D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ7.5D-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.7VC DO214AA
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 47.2A
Voltage - Clamping (Max) @ Ipp: 12.7V
Voltage - Breakdown (Min): 8.46V
Voltage - Reverse Standoff (Typ): 7.5V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 9460 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6400 Stücke - Preis und Lieferfrist anzeigen
SS2FH10-M3/H ss2fh10.pdf
SS2FH10-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14719 Stücke - Preis und Lieferfrist anzeigen
VT5202-M3/4W vt5202-m3.pdf
VT5202-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO220AC
Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Part Status: Active
Packaging: Tube
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: VT5202
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Package / Case: TO-220-2
Mounting Type: Through Hole
Capacitance @ Vr, F: 1216pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 150µA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1N4148-TAP 1n4148.pdf
1N4148-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA DO35
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 365869 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.035 EUR
1N4148-TAP 1n4148.pdf
1N4148-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA DO35
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Diode Type: Standard
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
auf Bestellung 2949 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 382920 Stücke - Preis und Lieferfrist anzeigen
112+ 0.23 EUR
207+ 0.13 EUR
500+ 0.077 EUR
1000+ 0.053 EUR
2000+ 0.045 EUR
1N4148TR 1n4148.pdf
1N4148TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA DO35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Reverse Recovery Time (trr): 8 ns
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Packaging: Tape & Reel (TR)
auf Bestellung 298918 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3306263 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.035 EUR
30000+ 0.032 EUR
50000+ 0.028 EUR
100000+ 0.026 EUR
1N4148TR 1n4148.pdf
1N4148TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA DO35
Reverse Recovery Time (trr): 8 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 300mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
auf Bestellung 298918 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3306263 Stücke - Preis und Lieferfrist anzeigen
112+ 0.23 EUR
207+ 0.13 EUR
500+ 0.077 EUR
1000+ 0.053 EUR
2000+ 0.045 EUR
5000+ 0.041 EUR
1N4151TR 1n4151.pdf
1N4151TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA DO35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 358582 Stücke - Preis und Lieferfrist anzeigen
1N4151TR 1n4151.pdf
1N4151TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA DO35
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
auf Bestellung 3482 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 355100 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
75+ 0.35 EUR
137+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.08 EUR
2000+ 0.068 EUR
1N914TR 1n914.pdf
1N914TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA DO35
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 231013 Stücke - Preis und Lieferfrist anzeigen
1N914TR 1n914.pdf
1N914TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA DO35
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 781 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 230232 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
75+ 0.35 EUR
137+ 0.19 EUR
500+ 0.12 EUR
BAV21-TR bav17.pdf
BAV21-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA DO35
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23872 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.064 EUR
BAV21-TR bav17.pdf
BAV21-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
auf Bestellung 23872 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
56+ 0.47 EUR
63+ 0.42 EUR
114+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.082 EUR
5000+ 0.074 EUR
1N4150TR 1n4150.pdf
1N4150TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Current - Average Rectified (Io): 300mA (DC)
Supplier Device Package: DO-35 (DO-204AH)
Packaging: Tape & Reel (TR)
auf Bestellung 60000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 72125 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.064 EUR
30000+ 0.058 EUR
50000+ 0.051 EUR
1N4150TR 1n4150.pdf
1N4150TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA DO35
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 300mA (DC)
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
auf Bestellung 64242 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67883 Stücke - Preis und Lieferfrist anzeigen
56+ 0.47 EUR
63+ 0.42 EUR
114+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.082 EUR
5000+ 0.074 EUR
LL4148-GS08 ll4148.pdf
LL4148-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA SOD80
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA (DC)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3625656 Stücke - Preis und Lieferfrist anzeigen
LS4148-GS08 техническая информация ls4148.pdf
LS4148-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD80
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
auf Bestellung 44984 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 142404 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.078 EUR
5000+ 0.07 EUR
12500+ 0.061 EUR
25000+ 0.055 EUR
LS4148-GS08 техническая информация ls4148.pdf
LS4148-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD80
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 45593 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 141795 Stücke - Preis und Lieferfrist anzeigen
59+ 0.44 EUR
65+ 0.4 EUR
120+ 0.22 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
LL4150GS08 ll4150.pdf
LL4150GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA SOD80
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30646 Stücke - Preis und Lieferfrist anzeigen
1N4002-E3/54 1n4001.pdf
1N4002-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4003-E3/54 1n4001.pdf
1N4003-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004-E3/54 1n4001.pdf
1N4004-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5392-E3/54 1n5391.pdf
1N5392-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 22000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22561 Stücke - Preis und Lieferfrist anzeigen
5500+ 0.15 EUR
11000+ 0.12 EUR
1N5392-E3/54 1n5391.pdf
1N5392-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AL
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 22561 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22000 Stücke - Preis und Lieferfrist anzeigen
28+ 0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N5395-E3/54 1n5391.pdf
1N5395-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AL
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 982 Stücke - Preis und Lieferfrist anzeigen
1N5395-E3/54 1n5391.pdf
1N5395-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 982 Stücke
Lieferzeit 21-28 Tag (e)
28+ 0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1N5399-E3/54 1n5391.pdf
1N5399-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 570 Stücke - Preis und Lieferfrist anzeigen
1N5399-E3/54 1n5391.pdf
1N5399-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
auf Bestellung 569 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
28+ 0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1N5397-E3/54 1n5221.pdf
1N5397-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8861 Stücke - Preis und Lieferfrist anzeigen
1N5397-E3/54 1n5221.pdf
1N5397-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AL
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Part Status: Active
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
auf Bestellung 8557 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 304 Stücke - Preis und Lieferfrist anzeigen
28+ 0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N5393-E3/54 1n5391.pdf
1N5393-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO204AL
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 37 Stücke - Preis und Lieferfrist anzeigen
1N5393-E3/54 1n5391.pdf
1N5393-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO204AL
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
auf Bestellung 37 Stücke
Lieferzeit 21-28 Tag (e)
28+ 0.94 EUR
34+ 0.78 EUR
1N5398-E3/54 1n5391.pdf
1N5398-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1.5A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAV103-GS08 техническая информация bav100.pdf
BAV103-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 250MA SOD80
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1071455 Stücke - Preis und Lieferfrist anzeigen
BAV100-GS08 bav100.pdf
BAV100-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Diode Type: Standard
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 250mA (DC)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35593 Stücke - Preis und Lieferfrist anzeigen
BAV100-GS08 bav100.pdf
BAV100-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 250MA SOD80
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA (DC)
Supplier Device Package: SOD-80 MiniMELF
auf Bestellung 53 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 35540 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
MMBD914-E3-08 mmbd914.pdf
MMBD914-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 200MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4004-E3/73 1n4001.pdf
1N4004-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4003-E3/73 1n4001.pdf
1N4003-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS16-E3-08 bas16.pdf
BAS16-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46159 Stücke - Preis und Lieferfrist anzeigen
BAS16-E3-08 bas16.pdf
BAS16-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 46077 Stücke - Preis und Lieferfrist anzeigen
IMBD4148-E3-08 imbd4148.pdf
IMBD4148-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45711 Stücke - Preis und Lieferfrist anzeigen
1N4934-E3/54 1n4933.pdf
1N4934-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 101 Stücke - Preis und Lieferfrist anzeigen
1N4934-E3/54 1n4933.pdf
1N4934-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Packaging: Cut Tape (CT)
auf Bestellung 101 Stücke
Lieferzeit 21-28 Tag (e)
30+ 0.88 EUR
40+ 0.65 EUR
100+ 0.37 EUR
1N4936-E3/54 1n4933.pdf
1N4936-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4937-E3/54 1n4933.pdf
1N4937-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4933-E3/54 1n4933.pdf
1N4933-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 11000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14052 Stücke - Preis und Lieferfrist anzeigen
5500+ 0.15 EUR
11000+ 0.13 EUR
1N4933-E3/54 1n4933.pdf
1N4933-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 200 ns
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 14052 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11000 Stücke - Preis und Lieferfrist anzeigen
29+ 0.91 EUR
39+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N4935-E3/54 1n4933.pdf
1N4935-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Diode Type: Standard
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 49546 Stücke - Preis und Lieferfrist anzeigen
1N4935-E3/54 1n4933.pdf
1N4935-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
auf Bestellung 46 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49500 Stücke - Preis und Lieferfrist anzeigen
29+ 0.91 EUR
39+ 0.67 EUR
BA158-E3/54 ba157.pdf
BA158-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9290 Stücke - Preis und Lieferfrist anzeigen
BA158-E3/54 ba157.pdf
BA158-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 9290 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5500 Stücke - Preis und Lieferfrist anzeigen
BA159-E3/54 ba157.pdf
BA159-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5395-E3/73 1n5391.pdf
1N5395-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AL
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4148WS-E3-08 1n4148ws.pdf
1N4148WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD323
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 124321 Stücke - Preis und Lieferfrist anzeigen
S1M-E3/5AT s1.pdf
S1M-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 103181 Stücke - Preis und Lieferfrist anzeigen
S1M-E3/5AT s1.pdf
S1M-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 2307 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100874 Stücke - Preis und Lieferfrist anzeigen
27+ 0.99 EUR
33+ 0.81 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
1N4150W-E3-08 1n4150w.pdf
1N4150W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9137 Stücke - Preis und Lieferfrist anzeigen
1N4150W-E3-08 1n4150w.pdf
1N4150W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
auf Bestellung 1689 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7448 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.54 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
SD101C-TR sd101a.pdf
SD101C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA DO35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 30V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Current - Average Rectified (Io): 30mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SD101
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23098 Stücke - Preis und Lieferfrist anzeigen
SD101C-TR sd101a.pdf
SD101C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA DO35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 30V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Current - Average Rectified (Io): 30mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Base Part Number: SD101
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-35 (DO-204AH)
auf Bestellung 23098 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
GSOT36-HE3-08 gsot03.pdf
GSOT36-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 71VC SOT23
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 248W
Voltage - Clamping (Max) @ Ipp: 71V
Voltage - Breakdown (Min): 39V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 52pF @ 1MHz
Applications: Automotive
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13238 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.23 EUR
6000+ 0.21 EUR
BZX84C24-E3-08 bzx84v.pdf
BZX84C24-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 636 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7759 Stücke - Preis und Lieferfrist anzeigen
44+ 0.6 EUR
54+ 0.49 EUR
101+ 0.26 EUR
500+ 0.17 EUR
BZD27C30P-E3-08 bzd27series.pdf
BZD27C30P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 800MW DO219AB
Base Part Number: BZD27C30
Current - Reverse Leakage @ Vr: 1µA @ 22V
Impedance (Max) (Zzt): 15 Ohms
Power - Max: 800mW
Voltage - Zener (Nom) (Vz): 30V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
Supplier Device Package: DO-219AB (SMF)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
auf Bestellung 3336 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3060 Stücke - Preis und Lieferfrist anzeigen
SMBJ33AHE3/52 smbj.pdf
SMBJ33AHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33V 53.3V DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.3A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1151 Stücke - Preis und Lieferfrist anzeigen
1N5223B-TR 1n5221.pdf
1N5223B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Packaging: Cut Tape (CT)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
auf Bestellung 43171 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
TZM5242B-GS08 tzq5221b.pdf
TZM5242B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZM5242
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20468 Stücke - Preis und Lieferfrist anzeigen
TZM5242B-GS08 tzq5221b.pdf
TZM5242B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Manufacturer: Vishay General Semiconductor - Diodes Division
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZM5242
auf Bestellung 866 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19602 Stücke - Preis und Lieferfrist anzeigen
TZM5230B-GS08 tzm5221.pdf
TZM5230B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW SOD80
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 39154 Stücke - Preis und Lieferfrist anzeigen
TZM5230B-GS08 tzm5221.pdf
TZM5230B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW SOD80
Part Status: Active
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
auf Bestellung 1803 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37351 Stücke - Preis und Lieferfrist anzeigen
46+ 0.57 EUR
54+ 0.48 EUR
102+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
TZM5232B-GS08 tzm5221.pdf
TZM5232B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47856 Stücke - Preis und Lieferfrist anzeigen
TZM5232B-GS08 tzm5221.pdf
TZM5232B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 2795 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47561 Stücke - Preis und Lieferfrist anzeigen
TZM5234B-GS08 tzm5221.pdf
TZM5234B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 102500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 115540 Stücke - Preis und Lieferfrist anzeigen
TZM5234B-GS08 tzm5221.pdf
TZM5234B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 103969 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 114071 Stücke - Preis und Lieferfrist anzeigen
TZMC12-GS08 tzm.pdf
TZMC12-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Base Part Number: TZMC12
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 9.1V
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 45000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 252936 Stücke - Preis und Lieferfrist anzeigen
TZMC12-GS08 tzm.pdf
TZMC12-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Base Part Number: TZMC12
Supplier Device Package: SOD-80 MiniMELF
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 9.1V
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay General Semiconductor - Diodes Division
auf Bestellung 46035 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 251901 Stücke - Preis und Lieferfrist anzeigen
TZMC3V3-GS08 tzm.pdf
TZMC3V3-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 180811 Stücke - Preis und Lieferfrist anzeigen
2500+ 0.11 EUR
5000+ 0.091 EUR
12500+ 0.078 EUR
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