Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41723) > Seite 357 nach 696
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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VS-85HF40M8 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 400V 85A DO203ABCurrent - Reverse Leakage @ Vr: 9 mA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -65°C ~ 180°C Supplier Device Package: DO-203AB (DO-5) Current - Average Rectified (Io): 85A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Packaging: Bulk |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-FC80NA20 | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 200V 108A SOT227 Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 405W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-GP250SA60S | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 380A 893W SOT-227 Current - Collector Cutoff (Max): 100 µA Power - Max: 893 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 380 A Part Status: Obsolete IGBT Type: PT, Trench Supplier Device Package: SOT-227 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-UFL250AB60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 130A SOT227 Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 130A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 104 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10CTQ150STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO263AB Current - Reverse Leakage @ Vr: 50 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF02STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF02STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF04STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF04STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 480 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 400 V Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF06STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF06STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF10STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 310 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF10STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 310 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETF12STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Reverse Recovery Time (trr): 310 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETS08STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 10A TO263AB Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10ETS10STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO263AB Current - Reverse Leakage @ Vr: 50 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 10A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETS12STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A D2PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10ETS12STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A D2PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10TQ035STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 900pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10TQ035STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 900pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10TTS08STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A DPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-10TTS08STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 10A DPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-12CTQ035STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 6A D2PAK Current - Reverse Leakage @ Vr: 800 µA @ 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-12CTQ045STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 45V 6A TO263AB Current - Reverse Leakage @ Vr: 800 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-12TQ040STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 15A TO263AB Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 900pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-12TQ040STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 15A TO263AB Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 900pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-12TTS08STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 12.5A TO263AB Supplier Device Package: TO-263AB (D²PAK) Current - Off State (Max): 1 mA Voltage - On State (Vtm) (Max): 1.2 V Voltage - Gate Trigger (Vgt) (Max): 1 V Current - On State (It (AV)) (Max): 8 A Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 50Hz Current - Gate Trigger (Igt) (Max): 15 mA Current - Hold (Ih) (Max): 30 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12.5 A Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-12TTS08STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 12.5A TO263AB SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Off State (Max): 1 mA Voltage - On State (Vtm) (Max): 1.2 V Voltage - Gate Trigger (Vgt) (Max): 1 V Current - On State (It (AV)) (Max): 8 A Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 50Hz Current - Gate Trigger (Igt) (Max): 15 mA Current - Hold (Ih) (Max): 30 mA Operating Temperature: -40°C ~ 125°C Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 12.5 A Part Status: Active Supplier Device Package: TO-263AB (D²PAK) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-15CTQ035STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 35V 7.5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A Current - Reverse Leakage @ Vr: 800 µA @ 35 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-15CTQ035STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 35V 7.5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A Current - Reverse Leakage @ Vr: 800 µA @ 35 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-15CTQ045STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 45V 7.5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A Current - Reverse Leakage @ Vr: 800 µA @ 45 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-15CTQ045STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 45V 7.5A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A Current - Reverse Leakage @ Vr: 800 µA @ 45 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16CTQ060STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 60V 8A TO263AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 550 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16CTQ080STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOT 80V 8A TO263AB Current - Reverse Leakage @ Vr: 550 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16CTQ100STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 8A TO263AB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 550 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-16CTQ100STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V 8A TO263AB Current - Reverse Leakage @ Vr: 550 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16TTS08STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 16A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16TTS12STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.2KV 16A TO-263AB (D2PAK) Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 16 A Part Status: Active Supplier Device Package: TO-263AB (D2PAK) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.4 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 10 A Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 150 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16TTS16STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 16A TO263AB Voltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 16 A Supplier Device Package: TO-263AB (D2PAK) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.4 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 10 A Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 150 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-16TTS16STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 1.6KV 16A TO263AB Voltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 16 A Supplier Device Package: TO-263AB (D2PAK) Current - Off State (Max): 10 mA Voltage - On State (Vtm) (Max): 1.4 V Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 10 A Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 150 mA Operating Temperature: -40°C ~ 125°C SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-18TQ035STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 18A TO263AB Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 18A Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-18TQ035STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 18A TO263AB Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 18A Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-18TQ045STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 18A TO263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 18A Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-18TQ045STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 18A TO263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 18A Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-19TQ015STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 19A TO263AB Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A Voltage - DC Reverse (Vr) (Max): 15 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 19A Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20CTQ035STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 35V 10A TO263AB Current - Reverse Leakage @ Vr: 2 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20CTQ035STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 35V 10A TO263AB Current - Reverse Leakage @ Vr: 2 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20CTQ040STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 10A TO263AB Current - Reverse Leakage @ Vr: 2 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20CTQ040STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 40V 10A TO263AB Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 mA @ 40 V Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20CTQ045STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 10A TO263AB Current - Reverse Leakage @ Vr: 2 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20CTQ150STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 150V 10A TO263AB Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| VS-20ETF02STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 20A TO263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| VS-20ETF02STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 20A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| VS-20ETF04STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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VS-20ETF06STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| VS-20ETF08STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| VS-20ETF08STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D²PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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VS-20ETF10STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20ETF10STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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VS-20ETF12STRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VS-85HF40M8 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 85A DO203AB
Current - Reverse Leakage @ Vr: 9 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 85A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Description: DIODE STANDARD 400V 85A DO203AB
Current - Reverse Leakage @ Vr: 9 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 180°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 85A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.31 EUR |
| 10+ | 17.01 EUR |
| 100+ | 12.88 EUR |
| VS-FC80NA20 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 200V 108A SOT227
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Description: MOSFET N-CH 200V 108A SOT227
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-GP250SA60S |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 380A 893W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 893 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 380 A
Part Status: Obsolete
IGBT Type: PT, Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: IGBT MOD 600V 380A 893W SOT-227
Current - Collector Cutoff (Max): 100 µA
Power - Max: 893 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 380 A
Part Status: Obsolete
IGBT Type: PT, Trench
Supplier Device Package: SOT-227
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-UFL250AB60 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 130A SOT227
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 130A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 104 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE GEN PURP 600V 130A SOT227
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 130A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 104 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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| VS-10CTQ150STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-10ETF02STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-10ETF02STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-10ETF04STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-10ETF04STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 480 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 480 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-10ETF06STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-10ETF06STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-10ETF10STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-10ETF10STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-10ETF12STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 310 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-10ETS08STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 10A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Description: DIODE STANDARD 800V 10A TO263AB
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.92 EUR |
| 2400+ | 1.7 EUR |
| VS-10ETS10STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 10A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VS-10ETS12STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A D2PAK
Description: DIODE GEN PURP 1.2KV 10A D2PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| VS-10ETS12STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A D2PAK
Description: DIODE GEN PURP 1.2KV 10A D2PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| VS-10TQ035STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-10TQ035STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-10TTS08STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A DPAK
Description: SCR 800V 10A DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| VS-10TTS08STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A DPAK
Description: SCR 800V 10A DPAK
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| VS-12CTQ035STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 6A D2PAK
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 35V 6A D2PAK
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.69 EUR |
| 1600+ | 1.33 EUR |
| 2400+ | 1.29 EUR |
| VS-12CTQ045STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 6A TO263AB
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOT 45V 6A TO263AB
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-12TQ040STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 15A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-12TQ040STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 15A TO263AB
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-12TTS08STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Current - Off State (Max): 1 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Active
Description: SCR 800V 12.5A TO263AB
Supplier Device Package: TO-263AB (D²PAK)
Current - Off State (Max): 1 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Active
Produkt ist nicht verfügbar
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| VS-12TTS08STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO263AB
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Off State (Max): 1 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Active
Supplier Device Package: TO-263AB (D²PAK)
Description: SCR 800V 12.5A TO263AB
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Off State (Max): 1 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - On State (It (AV)) (Max): 8 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 50Hz
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 12.5 A
Part Status: Active
Supplier Device Package: TO-263AB (D²PAK)
Produkt ist nicht verfügbar
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| VS-15CTQ035STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 35V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Description: DIODE ARR SCHOT 35V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Produkt ist nicht verfügbar
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| VS-15CTQ035STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 35V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Description: DIODE ARR SCHOT 35V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-15CTQ045STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Description: DIODE ARR SCHOT 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-15CTQ045STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Description: DIODE ARR SCHOT 45V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-16CTQ060STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOT 60V 8A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-16CTQ080STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOT 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-16CTQ100STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 8A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 100V 8A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.43 EUR |
| 2400+ | 2.18 EUR |
| VS-16CTQ100STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 100V 8A TO263AB
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-16TTS08STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 16A TO263AB
Description: SCR 800V 16A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| VS-16TTS12STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 16A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: SCR 1.2KV 16A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-16TTS16STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 16A TO263AB
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: SCR 1.6KV 16A TO263AB
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-16TTS16STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 16A TO263AB
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: SCR 1.6KV 16A TO263AB
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 16 A
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-18TQ035STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 18A TO263AB
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 35V 18A TO263AB
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-18TQ035STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 18A TO263AB
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 35V 18A TO263AB
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-18TQ045STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 18A TO263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: DIODE SCHOTTKY 45V 18A TO263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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| VS-18TQ045STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 18A TO263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: DIODE SCHOTTKY 45V 18A TO263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2.5 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 18 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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| VS-19TQ015STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 19A TO263AB
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 15V 19A TO263AB
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 19 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 19A
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20CTQ035STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 35V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20CTQ035STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 35V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20CTQ040STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 40V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20CTQ040STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 10A TO263AB
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARR SCHOTT 40V 10A TO263AB
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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| VS-20CTQ045STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20CTQ150STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 10A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOT 150V 10A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20ETF02STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description: DIODE GEN PURP 200V 20A TO263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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| VS-20ETF02STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| VS-20ETF04STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| VS-20ETF06STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| VS-20ETF08STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-20ETF08STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 800V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-20ETF10STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-20ETF10STRR-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE STANDARD 1000V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| VS-20ETF12STRL-M3 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH