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VS-MBR1535CT-M3 VS-MBR1535CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr1535_45ct-m3.pdf Description: DIODE ARR SCHOT 35V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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VS-MBR1545CT-M3 VS-MBR1545CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr1535_45ct-m3.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
auf Bestellung 7800 Stücke:
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13+1.44 EUR
18+0.99 EUR
100+0.86 EUR
500+0.75 EUR
1000+0.69 EUR
2000+0.67 EUR
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VS-MBR1635-M3 VS-MBR1635-M3 Vishay General Semiconductor - Diodes Division vs-mbr1635-m3.pdf Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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VS-MBR1645-M3 VS-MBR1645-M3 Vishay General Semiconductor - Diodes Division vs-mbr1635-m3.pdf Description: DIODE SCHOTTKY 45V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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2000+0.83 EUR
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VS-MBR2080CT-M3 VS-MBR2080CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr2080_90_100ct-m3.pdf Description: DIODE ARR SCHOTT 80V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Produkt ist nicht verfügbar
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VS-MBR2090CT-M3 VS-MBR2090CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr2080_90_100ct-m3.pdf Description: DIODE ARR SCHOTT 90V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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VS-MBR2535CT-M3 VS-MBR2535CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr2535_45ct-m3.pdf Description: DIODE ARR SCHOTT 35V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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VS-MBR2545CT-M3 VS-MBR2545CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr2535_45ct-m3.pdf Description: DIODE ARR SCHOTT 45V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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VS-MBR3045CT-M3 VS-MBR3045CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr3045ct-m3.pdf Description: DIODE ARR SCHOTT 45V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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VS-MBR4045CT-M3 VS-MBR4045CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr4045ct-m3.pdf Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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VS-MBR745-M3 VS-MBR745-M3 Vishay General Semiconductor - Diodes Division vs-mbr735-m3.pdf Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
auf Bestellung 4843 Stücke:
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VS-MUR1020CT-M3 VS-MUR1020CT-M3 Vishay General Semiconductor - Diodes Division vs-mur1020ct-m3.pdf Description: DIODE ARRAY GP 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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VS-MUR1520-M3 VS-MUR1520-M3 Vishay General Semiconductor - Diodes Division vs-mur1520-m3.pdf Description: DIODE STANDARD 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 7892 Stücke:
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VS-MUR1620CT-M3 VS-MUR1620CT-M3 Vishay General Semiconductor - Diodes Division vs-mur1620ct-m3.pdf Description: DIODE ARRAY GP 200V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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VS-MUR2020CT-M3 VS-MUR2020CT-M3 Vishay General Semiconductor - Diodes Division vs-mur2020ct-m3.pdf Description: DIODE ARRAY GP 200V 10A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 6521 Stücke:
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VS-MUR820-M3 VS-MUR820-M3 Vishay General Semiconductor - Diodes Division vs-mur820-m3.pdf Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3812 Stücke:
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VS-STPS20L15D-M3 VS-STPS20L15D-M3 Vishay General Semiconductor - Diodes Division vs-stps20l15d-m3.pdf Description: DIODE SCHOTTKY 15V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
auf Bestellung 891 Stücke:
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VS-95-9989PBF Vishay General Semiconductor - Diodes Division Description: DIODE GENERAL PURPOSE TO220
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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1N4003E-E3/73 1N4003E-E3/73 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4881 Stücke:
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1N4730A-TAP 1N4730A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 12545 Stücke:
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1N4735A-TAP 1N4735A-TAP Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 6.2V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 14713 Stücke:
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1N5625-TAP 1N5625-TAP Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BY255P-E3/73 BY255P-E3/73 Vishay General Semiconductor - Diodes Division by251p.pdf Description: DIODE STANDARD 1300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 1300
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 978 Stücke:
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BYV28-100-TAP BYV28-100-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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BZT03C15-TAP BZT03C15-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 15V 1.3W SOD57
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 11189 Stücke:
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16+1.14 EUR
19+0.93 EUR
100+0.64 EUR
500+0.52 EUR
1000+0.44 EUR
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BZX55C6V8-TAP BZX55C6V8-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
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BZX85B4V3-TAP BZX85B4V3-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 4.3V 1.3W DO41
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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MPG06GHE3_A/73 MPG06GHE3_A/73 Vishay General Semiconductor - Diodes Division MPG06(A-M).pdf Description: DIODE GEN PURP 400V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TZX18B-TAP TZX18B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
auf Bestellung 11858 Stücke:
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MUR420-E3/73 MUR420-E3/73 Vishay General Semiconductor - Diodes Division mur420.pdf Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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P6KE200A-E3/73 P6KE200A-E3/73 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 171VWM 274VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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RGP02-20E-E3/73 RGP02-20E-E3/73 Vishay General Semiconductor - Diodes Division rgp02.pdf Description: DIODE STD 2000V 500MA DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
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UF5404-E3/73 UF5404-E3/73 Vishay General Semiconductor - Diodes Division uf5400.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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AZ23C22-E3-08 AZ23C22-E3-08 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER 22V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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BAS20-E3-18 BAS20-E3-18 Vishay General Semiconductor - Diodes Division bas19_bas20_bas21.pdf Description: DIODE GP 150V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
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BAT46W-HE3-18 BAT46W-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54S-HE3-08 BAT54S-HE3-08 Vishay General Semiconductor - Diodes Division BAT54_A_C_S_Rev1.9_3-16-16.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54W-G3-08 BAT54W-G3-08 Vishay General Semiconductor - Diodes Division BAT54W-G.pdf Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 14281 Stücke:
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BAV20WS-HE3-08 BAV20WS-HE3-08 Vishay General Semiconductor - Diodes Division bav19ws.pdf Description: DIODE STANDARD 150V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 9406 Stücke:
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BAV21WS-HE3-18 BAV21WS-HE3-18 Vishay General Semiconductor - Diodes Division bav19ws.pdf Description: DIODE STANDARD 200V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 93077 Stücke:
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BAV99-HE3-08 BAV99-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 70V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Qualification: AEC-Q101
auf Bestellung 2005 Stücke:
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56+0.32 EUR
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BYM10-200-E3/96 BYM10-200-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2620 Stücke:
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BYM10-50-E3/97 BYM10-50-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 50V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 7611 Stücke:
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BYVB32-200-E3/81 BYVB32-200-E3/81 Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 498 Stücke:
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BZM55B13-TR BZM55B13-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 13V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
auf Bestellung 12494 Stücke:
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BZM55B16-TR BZM55B16-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 16V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 11605 Stücke:
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BZM55B2V7-TR BZM55B2V7-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 2.7V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 13172 Stücke:
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BZM55C12-TR BZM55C12-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 12V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 11993 Stücke:
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BZM55C20-TR BZM55C20-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 20V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
auf Bestellung 17100 Stücke:
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BZM55C30-TR BZM55C30-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 30V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 8275 Stücke:
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BZM55C3V6-TR3 BZM55C3V6-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 3.6V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 8341 Stücke:
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196+0.09 EUR
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1000+0.07 EUR
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5000+0.06 EUR
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BZT03C10-TR BZT03C10-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 10V 1.3W SOD57
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
auf Bestellung 22680 Stücke:
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BZT52B18-E3-18 BZT52B18-E3-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 18V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 26128 Stücke:
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BZT52C12-E3-08 BZT52C12-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 12V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 26835 Stücke:
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217+0.08 EUR
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BZT52C12-HE3-08 BZT52C12-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 12V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36250 Stücke:
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BZT52C27-E3-08 BZT52C27-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 27V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
auf Bestellung 12522 Stücke:
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62+0.29 EUR
126+0.14 EUR
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BZT52C36-HE3-18 BZT52C36-HE3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 36V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 87 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B10-E3-18 BZX384B10-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 10V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 21192 Stücke:
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40+0.44 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
5000+0.07 EUR
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BZX384B15-G3-08 BZX384B15-G3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 15V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 19882 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
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184+0.10 EUR
500+0.09 EUR
1000+0.09 EUR
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BZX384B2V4-E3-08 BZX384B2V4-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 2.4V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 14753 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
61+0.29 EUR
124+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
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VS-MBR1535CT-M3 vs-mbr1535_45ct-m3.pdf
VS-MBR1535CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 35V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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VS-MBR1545CT-M3 vs-mbr1535_45ct-m3.pdf
VS-MBR1545CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
auf Bestellung 7800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
18+0.99 EUR
100+0.86 EUR
500+0.75 EUR
1000+0.69 EUR
2000+0.67 EUR
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VS-MBR1635-M3 vs-mbr1635-m3.pdf
VS-MBR1635-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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VS-MBR1645-M3 vs-mbr1635-m3.pdf
VS-MBR1645-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 5495 Stücke:
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Anzahl Preis
8+2.41 EUR
50+1.16 EUR
100+1.13 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.83 EUR
Mindestbestellmenge: 8
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VS-MBR2080CT-M3 vs-mbr2080_90_100ct-m3.pdf
VS-MBR2080CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Produkt ist nicht verfügbar
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VS-MBR2090CT-M3 vs-mbr2080_90_100ct-m3.pdf
VS-MBR2090CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Produkt ist nicht verfügbar
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VS-MBR2535CT-M3 vs-mbr2535_45ct-m3.pdf
VS-MBR2535CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Produkt ist nicht verfügbar
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VS-MBR2545CT-M3 vs-mbr2535_45ct-m3.pdf
VS-MBR2545CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 92 Stücke:
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Anzahl Preis
7+2.87 EUR
50+1.41 EUR
Mindestbestellmenge: 7
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VS-MBR3045CT-M3 vs-mbr3045ct-m3.pdf
VS-MBR3045CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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VS-MBR4045CT-M3 vs-mbr4045ct-m3.pdf
VS-MBR4045CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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VS-MBR745-M3 vs-mbr735-m3.pdf
VS-MBR745-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
auf Bestellung 4843 Stücke:
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Anzahl Preis
10+1.78 EUR
50+0.80 EUR
100+0.73 EUR
500+0.65 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 10
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VS-MUR1020CT-M3 vs-mur1020ct-m3.pdf
VS-MUR1020CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 948 Stücke:
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Anzahl Preis
12+1.55 EUR
50+0.80 EUR
100+0.72 EUR
500+0.57 EUR
Mindestbestellmenge: 12
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VS-MUR1520-M3 vs-mur1520-m3.pdf
VS-MUR1520-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 7892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
50+1.18 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.75 EUR
2000+0.71 EUR
5000+0.64 EUR
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VS-MUR1620CT-M3 vs-mur1620ct-m3.pdf
VS-MUR1620CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
50+0.90 EUR
100+0.82 EUR
500+0.74 EUR
1000+0.70 EUR
2000+0.64 EUR
Mindestbestellmenge: 10
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VS-MUR2020CT-M3 vs-mur2020ct-m3.pdf
VS-MUR2020CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 6521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
50+1.19 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.68 EUR
5000+0.65 EUR
Mindestbestellmenge: 10
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VS-MUR820-M3 vs-mur820-m3.pdf
VS-MUR820-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
50+0.71 EUR
100+0.67 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.51 EUR
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VS-STPS20L15D-M3 vs-stps20l15d-m3.pdf
VS-STPS20L15D-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
auf Bestellung 891 Stücke:
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Anzahl Preis
7+2.68 EUR
50+1.41 EUR
100+1.27 EUR
500+1.04 EUR
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VS-95-9989PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GENERAL PURPOSE TO220
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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1N4003E-E3/73 1n4001.pdf
1N4003E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4881 Stücke:
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Anzahl Preis
46+0.39 EUR
68+0.26 EUR
101+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
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1N4730A-TAP 1n4728a.pdf
1N4730A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 12545 Stücke:
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Anzahl Preis
59+0.30 EUR
87+0.20 EUR
157+0.11 EUR
500+0.10 EUR
1000+0.09 EUR
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1N4735A-TAP 1n4728a.pdf
1N4735A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1.3W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
auf Bestellung 14713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
145+0.12 EUR
260+0.07 EUR
Mindestbestellmenge: 100
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1N5625-TAP 1n5624.pdf
1N5625-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 4424 Stücke:
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Anzahl Preis
12+1.57 EUR
14+1.28 EUR
100+0.99 EUR
500+0.84 EUR
1000+0.69 EUR
Mindestbestellmenge: 12
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BY255P-E3/73 by251p.pdf
BY255P-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 1300
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 978 Stücke:
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18+0.99 EUR
24+0.75 EUR
100+0.49 EUR
500+0.38 EUR
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BYV28-100-TAP byv2850.pdf
BYV28-100-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 1611 Stücke:
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Anzahl Preis
8+2.20 EUR
11+1.67 EUR
100+1.20 EUR
500+1.03 EUR
1000+0.87 EUR
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BZT03C15-TAP bzt03.pdf
BZT03C15-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W SOD57
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
auf Bestellung 11189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
19+0.93 EUR
100+0.64 EUR
500+0.52 EUR
1000+0.44 EUR
2000+0.43 EUR
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BZX55C6V8-TAP bzx55.pdf
BZX55C6V8-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
auf Bestellung 18138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
130+0.14 EUR
285+0.06 EUR
500+0.06 EUR
1000+0.06 EUR
2000+0.05 EUR
Mindestbestellmenge: 84
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BZX85B4V3-TAP BZX85_Series.pdf
BZX85B4V3-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 1.3W DO41
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 5688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
59+0.30 EUR
117+0.15 EUR
500+0.12 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 42
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MPG06GHE3_A/73 MPG06(A-M).pdf
MPG06GHE3_A/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TZX18B-TAP tzxserie.pdf
TZX18B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
auf Bestellung 11858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
73+0.24 EUR
149+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 50
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MUR420-E3/73 mur420.pdf
MUR420-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.20 EUR
23+0.79 EUR
100+0.64 EUR
Mindestbestellmenge: 15
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P6KE200A-E3/73 p6ke.pdf
P6KE200A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 171VWM 274VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.60 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 23
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RGP02-20E-E3/73 rgp02.pdf
RGP02-20E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 2000V 500MA DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 2139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
22+0.83 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
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UF5404-E3/73 uf5400.pdf
UF5404-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
18+0.99 EUR
100+0.65 EUR
500+0.56 EUR
Mindestbestellmenge: 13
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AZ23C22-E3-08 az23_series.pdf
AZ23C22-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
40+0.45 EUR
100+0.24 EUR
500+0.16 EUR
Mindestbestellmenge: 33
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BAS20-E3-18 bas19_bas20_bas21.pdf
BAS20-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
auf Bestellung 6741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
157+0.11 EUR
500+0.09 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.05 EUR
Mindestbestellmenge: 53
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BAT46W-HE3-18
BAT46W-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54S-HE3-08 BAT54_A_C_S_Rev1.9_3-16-16.pdf
BAT54S-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54W-G3-08 BAT54W-G.pdf
BAT54W-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 14281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
72+0.24 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 48
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BAV20WS-HE3-08 bav19ws.pdf
BAV20WS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 9406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
93+0.19 EUR
123+0.14 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 63
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BAV21WS-HE3-18 bav19ws.pdf
BAV21WS-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 93077 Stücke:
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Anzahl Preis
56+0.32 EUR
85+0.21 EUR
129+0.14 EUR
500+0.10 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
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BAV99-HE3-08
BAV99-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Qualification: AEC-Q101
auf Bestellung 2005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
94+0.19 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 56
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BYM10-200-E3/96 bym10-xxx.pdf
BYM10-200-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2620 Stücke:
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25+0.70 EUR
32+0.57 EUR
100+0.39 EUR
500+0.29 EUR
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BYM10-50-E3/97 bym10-xxx.pdf
BYM10-50-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 7611 Stücke:
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Anzahl Preis
25+0.72 EUR
37+0.49 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.23 EUR
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BYVB32-200-E3/81 byv32.pdf
BYVB32-200-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 498 Stücke:
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7+2.78 EUR
10+2.51 EUR
100+2.01 EUR
Mindestbestellmenge: 7
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BZM55B13-TR bzm55.pdf
BZM55B13-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
auf Bestellung 12494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
102+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
Mindestbestellmenge: 34
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BZM55B16-TR bzm55.pdf
BZM55B16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 11605 Stücke:
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Anzahl Preis
50+0.35 EUR
71+0.25 EUR
145+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 50
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BZM55B2V7-TR bzm55.pdf
BZM55B2V7-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 13172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
102+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
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BZM55C12-TR bzm55.pdf
BZM55C12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 11993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
102+0.17 EUR
196+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 67
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BZM55C20-TR bzm55.pdf
BZM55C20-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
auf Bestellung 17100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
102+0.17 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 67
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BZM55C30-TR bzm55.pdf
BZM55C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 8275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
102+0.17 EUR
196+0.09 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 67
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BZM55C3V6-TR3 bzm55.pdf
BZM55C3V6-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 8341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
102+0.17 EUR
196+0.09 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 67
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BZT03C10-TR bzt03.pdf
BZT03C10-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.3W SOD57
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
auf Bestellung 22680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
21+0.85 EUR
100+0.64 EUR
500+0.52 EUR
1000+0.44 EUR
2000+0.43 EUR
Mindestbestellmenge: 16
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BZT52B18-E3-18 bzt52_series.pdf
BZT52B18-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 26128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
105+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
2000+0.09 EUR
5000+0.08 EUR
Mindestbestellmenge: 35
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BZT52C12-E3-08 bzt52.pdf
BZT52C12-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 26835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
113+0.16 EUR
217+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 77
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BZT52C12-HE3-08 bzt52.pdf
BZT52C12-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
74+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 46
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BZT52C27-E3-08 bzt52_series.pdf
BZT52C27-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
auf Bestellung 12522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
Mindestbestellmenge: 42
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BZT52C36-HE3-18 bzt52.pdf
BZT52C36-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 87 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX384B10-E3-18 bzx384.pdf
BZX384B10-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
auf Bestellung 21192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
5000+0.07 EUR
Mindestbestellmenge: 40
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BZX384B15-G3-08 bzx384g.pdf
BZX384B15-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 19882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
89+0.20 EUR
184+0.10 EUR
500+0.09 EUR
1000+0.09 EUR
Mindestbestellmenge: 59
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BZX384B2V4-E3-08 bzx384.pdf
BZX384B2V4-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 14753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
61+0.29 EUR
124+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
Mindestbestellmenge: 40
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