| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRF840ASTRLPBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF840LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF840SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF840STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Features of semiconductor devices: small signal Max. forward voltage: 1V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.2W Manufacturer standard package: 3000pcs. Leakage current: 0.1µA |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
auf Bestellung 1165 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5822-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Manufacturer standard package: 1400pcs. |
auf Bestellung 602 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BYV26C-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Max. forward impulse current: 30A Case: SOD57 Kind of package: Ammo Pack Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV26C-TR | VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Max. forward impulse current: 30A Case: SOD57 Kind of package: 10 inch reel Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns Manufacturer standard package: 5000pcs. |
auf Bestellung 1389 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
auf Bestellung 428 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1095 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF740PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1275 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 1003 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 1802 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE Kind of package: 13 inch reel Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: 13 inch reel |
auf Bestellung 2713 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: Ammo Pack |
auf Bestellung 6645 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Type of diode: Schottky rectifying Case: DO41 Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: 13 inch reel |
auf Bestellung 699 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Type of diode: Schottky rectifying Case: DO41 Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: Ammo Pack |
auf Bestellung 1092 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAV99-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 4.5A Manufacturer standard package: 3000pcs. Max. forward voltage: 1.25V Power dissipation: 0.3W Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel |
auf Bestellung 25135 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 4.5A Manufacturer standard package: 3000pcs. Max. forward voltage: 1.25V Power dissipation: 0.3W Features of semiconductor devices: fast switching; small signal Application: automotive industry Kind of package: 7 inch reel |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 8pF Max. forward impulse current: 30A Case: DO41; DO204AL Kind of package: 13 inch reel Max. forward voltage: 1.1V Manufacturer standard package: 5500pcs. Reverse recovery time: 2µs Features of semiconductor devices: glass passivated |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
auf Bestellung 1320 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.24V Max. load current: 0.3A Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Manufacturer standard package: 2500pcs. |
auf Bestellung 67195 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: 13 inch reel Power dissipation: 0.2W Manufacturer standard package: 10000pcs. Reverse recovery time: 5ns Leakage current: 2µA |
auf Bestellung 28993 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistors Description: Thermistor: NTC; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Type of thermistor: NTC Resistance: 4.7kΩ Mounting: THT Material constant B: 3977K Operating temperature: -40...125°C Power: 0.5W |
auf Bestellung 6253 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
auf Bestellung 793 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Drain-source voltage: 500V Drain current: 16A Case: TO220FP Polarisation: unipolar On-state resistance: 0.145Ω Pulsed drain current: 50A Power dissipation: 35W Kind of channel: enhancement Gate charge: 86nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Drain-source voltage: 500V Drain current: 16A Case: D2PAK; TO263 Polarisation: unipolar On-state resistance: 0.145Ω Pulsed drain current: 50A Power dissipation: 250W Kind of channel: enhancement Gate charge: 86nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHG25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC Drain-source voltage: 500V Drain current: 16A Case: TO247AC Polarisation: unipolar On-state resistance: 0.145Ω Pulsed drain current: 50A Power dissipation: 250W Kind of channel: enhancement Gate charge: 86nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SIHP25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB Drain-source voltage: 500V Drain current: 16A Case: TO220AB Polarisation: unipolar On-state resistance: 0.145Ω Pulsed drain current: 50A Power dissipation: 250W Kind of channel: enhancement Gate charge: 86nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MBR10100-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 150A Kind of package: tube Manufacturer standard package: 50pcs. Max. forward voltage: 0.65V |
auf Bestellung 606 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX85C12-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 14470 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX85C5V1-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 7376 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF540PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TLLR4400 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC Wavelength: 612...625nm Viewing angle: 50° Type of diode: LED Number of terminals: 2 Luminosity: 0.63...1.2mcd LED diameter: 3mm LED lens: diffused; red LED colour: red Operating voltage: 1.9...2.4V DC LED current: 2mA Front: convex Terminal pitch: 2.54mm Mounting: THT |
auf Bestellung 4117 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TLLR4400-AS12Z | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC Wavelength: 612...625nm Viewing angle: 25° Type of diode: LED Number of terminals: 2 Luminosity: 0.63...1.2mcd LED diameter: 3mm LED lens: diffused; red LED colour: red Operating voltage: 1.9...2.4V DC LED current: 2mA Front: convex Terminal pitch: 2.54mm Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TLLR4401 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2 Wavelength: 612...625nm Viewing angle: 50° Type of diode: LED Number of terminals: 2 Luminosity: 1...2mcd LED diameter: 3mm LED lens: diffused; red LED colour: red Operating voltage: 1.9...2.4V DC LED current: 2mA Front: convex Terminal pitch: 2.54mm Mounting: THT |
auf Bestellung 2090 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C8V2-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 15920 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206G107MXYTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206 Type of capacitor: ceramic Capacitance: 100µF Operating voltage: 6.3V Dielectric: X5R Tolerance: ±20% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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B340A-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 65A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. |
Produkt ist nicht verfügbar |
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SS12-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.5V Max. off-state voltage: 20V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying |
auf Bestellung 2372 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ24A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® |
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SMBJ24A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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US1M-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 13 inch reel Manufacturer standard package: 7500pcs. Leakage current: 50µA |
auf Bestellung 7645 Stücke: Lieferzeit 14-21 Tag (e) |
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US1M-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. |
auf Bestellung 5087 Stücke: Lieferzeit 14-21 Tag (e) |
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US1MHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. Application: automotive industry Leakage current: 50µA |
auf Bestellung 727 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 892 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1645-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Max. forward impulse current: 150A Kind of package: tube Manufacturer standard package: 50pcs. |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5408-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: DO201AD Kind of package: 13 inch reel Max. forward voltage: 1V Reverse recovery time: 75ns Manufacturer standard package: 1400pcs. |
auf Bestellung 3863 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C15-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 19416 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C15-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; DO35; single diode; 14 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Case: DO35 Mounting: THT Tolerance: ±6% Semiconductor structure: single diode Kind of package: 14 inch reel Manufacturer standard package: 10000pcs. |
auf Bestellung 7674 Stücke: Lieferzeit 14-21 Tag (e) |
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DG390BDJ-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube Mounting: THT Supply voltage: -15...15V Type of integrated circuit: analog switch Kind of package: tube Output configuration: SPDT Case: DIP16 Number of channels: 2 |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4148W-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Leakage current: 0.1mA Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. |
auf Bestellung 66111 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF840ASTRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF840LCPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF840SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF840STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS40-05-E3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 3000pcs.
Leakage current: 0.1µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 3000pcs.
Leakage current: 0.1µA
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE27CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
auf Bestellung 1165 Stücke:
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| 1N5822-E3/54 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV26C-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
| BYV26C-TR |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
auf Bestellung 1389 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE400A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF740APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF740ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF740LCPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF740PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1275 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF740SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF740STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| 1.5KE18CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE180CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1802 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE18A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE200A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: 13 inch reel
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5817-E3/54 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 2713 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5817-E3/73 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 6645 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5819-E3/54 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5819-E3/73 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Case: DO41
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 1092 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV99-E3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
auf Bestellung 25135 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV99-HE3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Application: automotive industry
Kind of package: 7 inch reel
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 4.5A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Features of semiconductor devices: fast switching; small signal
Application: automotive industry
Kind of package: 7 inch reel
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4007GP-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41; DO204AL
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Manufacturer standard package: 5500pcs.
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| VJ1206A100KXAAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS85-GS08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 2500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 2500pcs.
auf Bestellung 67195 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS85-GS18 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 13 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 10000pcs.
Reverse recovery time: 5ns
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: 13 inch reel
Power dissipation: 0.2W
Manufacturer standard package: 10000pcs.
Reverse recovery time: 5ns
Leakage current: 2µA
auf Bestellung 28993 Stücke:
Lieferzeit 14-21 Tag (e)
| NTCLE100E3472JB0 |
|
Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: Thermistor: NTC; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of thermistor: NTC
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
Category: THT measurement NTC thermistors
Description: Thermistor: NTC; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of thermistor: NTC
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
auf Bestellung 6253 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE47CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHA25N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Drain-source voltage: 500V
Drain current: 16A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 35W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Drain-source voltage: 500V
Drain current: 16A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 35W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB25N50E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Drain-source voltage: 500V
Drain current: 16A
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 250W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Drain-source voltage: 500V
Drain current: 16A
Case: D2PAK; TO263
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 250W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG25N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Drain-source voltage: 500V
Drain current: 16A
Case: TO247AC
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 250W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Drain-source voltage: 500V
Drain current: 16A
Case: TO247AC
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 250W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP25N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Drain-source voltage: 500V
Drain current: 16A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 250W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Drain-source voltage: 500V
Drain current: 16A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.145Ω
Pulsed drain current: 50A
Power dissipation: 250W
Kind of channel: enhancement
Gate charge: 86nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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Im Einkaufswagen
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| MBR10100-E3/4W |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward voltage: 0.65V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward voltage: 0.65V
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| BZX85C12-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
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| BZX85C5V1-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 7376 Stücke:
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| IRF540PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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| IRF540SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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| TLLR4400 |
|
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
auf Bestellung 4117 Stücke:
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| TLLR4400-AS12Z |
|
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 25°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Wavelength: 612...625nm
Viewing angle: 25°
Type of diode: LED
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
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| TLLR4401 |
|
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 1...2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Category: THT LEDs Round
Description: LED; 3mm; red; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Wavelength: 612...625nm
Viewing angle: 50°
Type of diode: LED
Number of terminals: 2
Luminosity: 1...2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
auf Bestellung 2090 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX55C8V2-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 15920 Stücke:
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| VJ1206G107MXYTW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±20%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±20%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...85°C
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| B340A-E3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 65A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 65A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
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| SS12-E3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 2372 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBJ24A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
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| SMBJ24A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Technology: TransZorb®
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| US1M-E3/5AT |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Leakage current: 50µA
auf Bestellung 7645 Stücke:
Lieferzeit 14-21 Tag (e)
| US1M-E3/61T |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
auf Bestellung 5087 Stücke:
Lieferzeit 14-21 Tag (e)
| US1MHE3_A/H |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Application: automotive industry
Leakage current: 50µA
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFZ44PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 892 Stücke:
Lieferzeit 14-21 Tag (e)
| MBR1645-E3/45 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
| UF5408-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1V
Reverse recovery time: 75ns
Manufacturer standard package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1V
Reverse recovery time: 75ns
Manufacturer standard package: 1400pcs.
auf Bestellung 3863 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX55C15-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 19416 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX55C15-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; 14 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer standard package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; DO35; single diode; 14 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer standard package: 10000pcs.
auf Bestellung 7674 Stücke:
Lieferzeit 14-21 Tag (e)
| DG390BDJ-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube
Mounting: THT
Supply voltage: -15...15V
Type of integrated circuit: analog switch
Kind of package: tube
Output configuration: SPDT
Case: DIP16
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube
Mounting: THT
Supply voltage: -15...15V
Type of integrated circuit: analog switch
Kind of package: tube
Output configuration: SPDT
Case: DIP16
Number of channels: 2
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4148W-E3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
auf Bestellung 66111 Stücke:
Lieferzeit 14-21 Tag (e)