| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SS34-E3/9AT | VISHAY |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Case: SMC Mounting: SMD Max. forward impulse current: 100A Manufacturer standard package: 3500pcs. Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 3A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 20mA Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube Manufacturer standard package: 50pcs. Heatsink thickness: 1.14...1.39mm |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
auf Bestellung 2917 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
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SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
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Im Einkaufswagen Stück im Wert von UAH |
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SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
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SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 5mA Type of diode: Schottky rectifying Max. forward impulse current: 40A Manufacturer standard package: 7500pcs. Max. forward voltage: 0.75V |
auf Bestellung 7093 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SS16-E3/61T | VISHAY |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.75V |
auf Bestellung 5034 Stücke: Lieferzeit 14-21 Tag (e) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Case: SMA Mounting: SMD Application: automotive industry Max. off-state voltage: 60V Load current: 1A Kind of package: 7 inch reel Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.75V |
auf Bestellung 3865 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; Ø16x25mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Body dimensions: Ø16x25mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF530PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 847 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF530SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX55C10-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 7670 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BZX55C12-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 7894 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MUR460-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 4A; Ifsm: 150A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Case: DO201AD Kind of package: 13 inch reel Reverse recovery time: 50ns Manufacturer standard package: 1400pcs. Max. forward voltage: 1.05V Features of semiconductor devices: ultrafast switching Semiconductor structure: single diode Max. forward impulse current: 150A |
auf Bestellung 602 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N4007-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V Case: DO41; DO204AL Mounting: THT Max. forward impulse current: 30A Manufacturer standard package: 5500pcs. Max. forward voltage: 1.1V Max. off-state voltage: 1kV Load current: 1A Kind of package: 13 inch reel Semiconductor structure: single diode Capacitance: 15pF Type of diode: rectifying |
auf Bestellung 21240 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N4007-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack Case: DO41; DO204AL Mounting: THT Max. forward impulse current: 30A Manufacturer standard package: 3000pcs. Max. forward voltage: 1.1V Max. off-state voltage: 1kV Load current: 1A Kind of package: Ammo Pack Semiconductor structure: single diode Capacitance: 15pF Type of diode: rectifying |
auf Bestellung 12445 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
auf Bestellung 24461 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206Y104KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
auf Bestellung 26923 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N4148-TAP | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: DO35 Kind of package: Ammo Pack Reverse recovery time: 8ns Max. load current: 0.5A Max. forward impulse current: 2A |
auf Bestellung 48563 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 53A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHJ7N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement Pulsed drain current: 17A Power dissipation: 96W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CRCW12060000Z0TABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 0Ω Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 140203 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAV70-E3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: 7 inch reel Manufacturer standard package: 3000pcs. Power dissipation: 0.35W Leakage current: 50µA Capacitance: 1.5pF Max. forward impulse current: 2A |
auf Bestellung 17627 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAV70-G3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.35W Kind of package: 7 inch reel Max. forward impulse current: 2A Manufacturer standard package: 3000pcs. Leakage current: 50µA Capacitance: 1.5pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LL4148-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Manufacturer standard package: 2500pcs. |
auf Bestellung 673990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LL4148-GS18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Manufacturer standard package: 10000pcs. |
auf Bestellung 8011 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GRC00JS4721E00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; Ø16x31.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Body dimensions: Ø16x31.5mm Operating temperature: -40...105°C Tolerance: ±20% Service life: 2000h |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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293D106X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 50V DC Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Mounting: SMD Manufacturer series: Tantamount Operating temperature: -55...125°C |
auf Bestellung 3337 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D475X0050D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D475X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±10% Manufacturer series: Tantamount Mounting: SMD Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Roll diameter max.: 178mm |
auf Bestellung 1877 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D475X9025B2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: B Case - inch: 1411 Case - mm: 3528 Manufacturer series: Tantamount |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D475X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Manufacturer series: Tantamount Mounting: SMD Operating temperature: -55...125°C Case: C Case - inch: 2312 Case - mm: 6032 Roll diameter max.: 178mm |
auf Bestellung 5442 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SIHA240N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Power dissipation: 31W Case: TO220FP Mounting: THT Gate charge: 23nC Kind of package: tube Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 30A Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIHD240N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Power dissipation: 78W Case: DPAK; TO252 Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 30A Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X0016D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
auf Bestellung 4714 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Operating voltage: 10V DC Mounting: SMD Case: C Operating temperature: -55...125°C Manufacturer series: Tantamount Type of capacitor: tantalum Capacitance: 47µF Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% |
auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Operating voltage: 16V DC Mounting: SMD Case: C Operating temperature: -55...125°C Manufacturer series: Tantamount Type of capacitor: tantalum Capacitance: 47µF Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% |
auf Bestellung 12693 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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293D476X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
auf Bestellung 17209 Stücke: Lieferzeit 14-21 Tag (e) |
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293D476X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
auf Bestellung 1206 Stücke: Lieferzeit 14-21 Tag (e) |
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293D476X96R3B2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 6.3V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: B Case - inch: 1411 Case - mm: 3528 Manufacturer series: Tantamount |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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293D477X96R3D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: 293D ESR value: 0.5Ω |
auf Bestellung 1894 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO201AD Kind of package: 13 inch reel Max. forward voltage: 1.2V Leakage current: 0.5mA Manufacturer standard package: 1400pcs. Capacitance: 30pF |
auf Bestellung 5580 Stücke: Lieferzeit 14-21 Tag (e) |
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2W10G-E4/51 | VISHAY |
Category: Round single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round Version: round Features of semiconductor devices: glass passivated Leads: wire Ø 0.75mm Max. off-state voltage: 1kV Electrical mounting: THT Load current: 2A Kind of package: bulk Case: WOG Type of bridge rectifier: single-phase Max. forward impulse current: 60A Max. forward voltage: 1.1V |
auf Bestellung 5669 Stücke: Lieferzeit 14-21 Tag (e) |
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GRC00JE1021H00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x20mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x20mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL215031102E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x25mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Height: 25mm Diameter: 16mm |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
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ZRC00JG1021H00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x25mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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SI7852DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS26S-E3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 7500pcs. Max. forward voltage: 0.62V Max. off-state voltage: 60V Load current: 2A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 10mA Case: SMA Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS26S-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Max. forward impulse current: 40A Manufacturer standard package: 1800pcs. Max. forward voltage: 0.62V Max. off-state voltage: 60V Load current: 2A Kind of package: 7 inch reel Semiconductor structure: single diode Leakage current: 10mA Case: SMA Type of diode: Schottky rectifying |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRF840APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS34-E3/9AT |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Case: SMC
Mounting: SMD
Max. forward impulse current: 100A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 20mA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Case: SMC
Mounting: SMD
Max. forward impulse current: 100A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 20mA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR20100CT-E3/4W |
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Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
Heatsink thickness: 1.14...1.39mm
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N7002K-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
auf Bestellung 2917 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHB15N65E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHF15N65E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP15N65E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS16-E3/5AT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.75V
auf Bestellung 7093 Stücke:
Lieferzeit 14-21 Tag (e)
| SS16-E3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
auf Bestellung 5034 Stücke:
Lieferzeit 14-21 Tag (e)
| SS16HE3_B/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Case: SMA
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 60V
Load current: 1A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.75V
auf Bestellung 3865 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF840PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)
| GRC00JG3321E00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; Ø16x25mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; Ø16x25mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF530PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF530SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX55C10-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 7670 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX55C12-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 7894 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR460-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Case: DO201AD
Kind of package: 13 inch reel
Reverse recovery time: 50ns
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.05V
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Max. forward impulse current: 150A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; Ifsm: 150A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Case: DO201AD
Kind of package: 13 inch reel
Reverse recovery time: 50ns
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.05V
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Max. forward impulse current: 150A
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4007-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Case: DO41; DO204AL
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 5500pcs.
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Capacitance: 15pF
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ufmax: 1.1V
Case: DO41; DO204AL
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 5500pcs.
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Capacitance: 15pF
Type of diode: rectifying
auf Bestellung 21240 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4007-E3/73 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack
Case: DO41; DO204AL
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Capacitance: 15pF
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO204AL,DO41; Ammo Pack
Case: DO41; DO204AL
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 3000pcs.
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Capacitance: 15pF
Type of diode: rectifying
auf Bestellung 12445 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X0025D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X9025D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 24461 Stücke:
Lieferzeit 14-21 Tag (e)
| VJ1206Y104KXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 26923 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4148-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 8ns
Max. load current: 0.5A
Max. forward impulse current: 2A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 8ns
Max. load current: 0.5A
Max. forward impulse current: 2A
auf Bestellung 48563 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHA20N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB20N50E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG20N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| SiHH20N50E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 53A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 53A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHP20N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHJ7N65E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Pulsed drain current: 17A
Power dissipation: 96W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Pulsed drain current: 17A
Power dissipation: 96W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRCW12060000Z0TABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 140203 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV70-E3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Power dissipation: 0.35W
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Power dissipation: 0.35W
Leakage current: 50µA
Capacitance: 1.5pF
Max. forward impulse current: 2A
auf Bestellung 17627 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV70-G3-08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: 7 inch reel
Max. forward impulse current: 2A
Manufacturer standard package: 3000pcs.
Leakage current: 50µA
Capacitance: 1.5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: 7 inch reel
Max. forward impulse current: 2A
Manufacturer standard package: 3000pcs.
Leakage current: 50µA
Capacitance: 1.5pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LL4148-GS08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
auf Bestellung 673990 Stücke:
Lieferzeit 14-21 Tag (e)
| LL4148-GS18 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Manufacturer standard package: 10000pcs.
auf Bestellung 8011 Stücke:
Lieferzeit 14-21 Tag (e)
| GRC00JS4721E00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; Ø16x31.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Body dimensions: Ø16x31.5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; Ø16x31.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Body dimensions: Ø16x31.5mm
Operating temperature: -40...105°C
Tolerance: ±20%
Service life: 2000h
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D106X9050D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Mounting: SMD
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Mounting: SMD
Manufacturer series: Tantamount
Operating temperature: -55...125°C
auf Bestellung 3337 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D475X0050D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D475X9050D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Roll diameter max.: 178mm
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Roll diameter max.: 178mm
auf Bestellung 1877 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D475X9025B2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D475X9025C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Roll diameter max.: 178mm
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Mounting: SMD
Operating temperature: -55...125°C
Case: C
Case - inch: 2312
Case - mm: 6032
Roll diameter max.: 178mm
auf Bestellung 5442 Stücke:
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| SIHA240N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHD240N60E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 78W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Power dissipation: 78W
Case: DPAK; TO252
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 293D476X0016D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X9010B2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
auf Bestellung 4714 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X9010C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 10V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 10V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
auf Bestellung 401 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X9016C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 16V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Operating voltage: 16V DC
Mounting: SMD
Case: C
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Type of capacitor: tantalum
Capacitance: 47µF
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
auf Bestellung 12693 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X9016D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 17209 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X9020D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
auf Bestellung 1206 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D476X96R3B2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: B
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| 293D477X96R3D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: 293D
ESR value: 0.5Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: 293D
ESR value: 0.5Ω
auf Bestellung 1894 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5408-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Manufacturer standard package: 1400pcs.
Capacitance: 30pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO201AD
Kind of package: 13 inch reel
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Manufacturer standard package: 1400pcs.
Capacitance: 30pF
auf Bestellung 5580 Stücke:
Lieferzeit 14-21 Tag (e)
| 2W10G-E4/51 |
|
Hersteller: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 2A
Kind of package: bulk
Case: WOG
Type of bridge rectifier: single-phase
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Version: round
Features of semiconductor devices: glass passivated
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 2A
Kind of package: bulk
Case: WOG
Type of bridge rectifier: single-phase
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
auf Bestellung 5669 Stücke:
Lieferzeit 14-21 Tag (e)
| GRC00JE1021H00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
| MAL215031102E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Height: 25mm
Diameter: 16mm
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
| ZRC00JG1021H00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI7852DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS26S-E3/5AT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS26S-E3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF840ALPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF840ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)