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DMN53D0LW-13 DMN53D0LW-13 Diodes Incorporated DMN53D0LW.pdf Description: MOSFET N-CH 50V 360MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DMP2066LVT-13 DMP2066LVT-13 Diodes Incorporated DMP2066LVT.pdf Description: MOSFET P-CH 20V 4.5A TSOT26
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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DMP3017SFG-13 DMP3017SFG-13 Diodes Incorporated DMP3017SFG.pdf Description: MOSFET P-CH 30V 11.5A PWRDI3333
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DMP3025LK3-13-01 DMP3025LK3-13-01 Diodes Incorporated Description: MOSFET P-CH 30V 10.6A TO252
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MBRF30100CT-LJ MBRF30100CT-LJ Diodes Incorporated MBR%28F%2930100CT.pdf Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NIS5132MN2-FN-7 NIS5132MN2-FN-7 Diodes Incorporated NIS5132.pdf Description: IC ELECTRONIC FUSE 10UDFN
Supplier Device Package: U-DFN3030-10
Operating Temperature: -40°C ~ 150°C
Current - Output: 3.6A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLV271IW5-7 TLV271IW5-7 Diodes Incorporated TLV27x.pdf Description: IC CMOS 1 CIRCUIT SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SOT-25
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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ZXCT1109SAQ-7 Diodes Incorporated Description: IC CURR MONITOR HIGH SIDE SOT23
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AP2138R-1.5TRG1 AP2138R-1.5TRG1 Diodes Incorporated AP2138-9.pdf Description: IC REG LINEAR 1.5V 250MA SOT89-3
Protection Features: Over Current
Voltage Dropout (Max): 1.3V @ 250mA
Voltage - Output (Min/Fixed): 1.5V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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DMG301NU-13 DMG301NU-13 Diodes Incorporated DMG301NU.pdf Description: MOSFET N-CH 25V 260MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V
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DMN10H220L-7 DMN10H220L-7 Diodes Incorporated DMN10H220L.pdf Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN2020UFCL-7 DMN2020UFCL-7 Diodes Incorporated DMN2020UFCL.pdf Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
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DMN2990UFZ-7B DMN2990UFZ-7B Diodes Incorporated DMN2990UFZ.pdf Description: MOSFET N-CH 20V 250MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
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DMN30H4D0L-7 DMN30H4D0L-7 Diodes Incorporated DMN30H4D0L.pdf Description: MOSFET N-CH 300V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
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PAM8407DR PAM8407DR Diodes Incorporated PAM8407.pdf Description: IC AMP CLASS D STEREO 2.4W 16SO
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Active
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SBR8U60P5-7 SBR8U60P5-7 Diodes Incorporated SBR8U60P5.pdf Description: DIODE SBR 60V 8A POWERDI5
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
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ZXRE330ASA-7 ZXRE330ASA-7 Diodes Incorporated ZXRE330.pdf Description: IC VREF SHUNT 0.5% SOT23
Current - Output: 5 mA
Current - Cathode: 2 µA
Noise - 10Hz to 10kHz: 55µVrms
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-3
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 150ppm/°C
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
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AP65400SP-13 AP65400SP-13 Diodes Incorporated AP65400.pdf Description: IC REG BUCK ADJUSTABLE 4A 8SO
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AP65500SP-13 AP65500SP-13 Diodes Incorporated AP65500.pdf Description: IC REG BUCK ADJ 5A SYNC 8-SO
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DMG301NU-13 DMG301NU-13 Diodes Incorporated DMG301NU.pdf Description: MOSFET N-CH 25V 260MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMN10H220L-7 DMN10H220L-7 Diodes Incorporated DMN10H220L.pdf Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN2020UFCL-7 DMN2020UFCL-7 Diodes Incorporated DMN2020UFCL.pdf Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1616-6 (Type E)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
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DMN2990UFZ-7B DMN2990UFZ-7B Diodes Incorporated DMN2990UFZ.pdf Description: MOSFET N-CH 20V 250MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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DMN30H4D0L-7 DMN30H4D0L-7 Diodes Incorporated DMN30H4D0L.pdf Description: MOSFET N-CH 300V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMN6140L-7 DMN6140L-7 Diodes Incorporated DMN6140L.pdf Description: MOSFET N-CH 60V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
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PAM8407DR PAM8407DR Diodes Incorporated PAM8407.pdf Description: IC AMP CLASS D STEREO 2.4W 16SO
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Active
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SBR8U60P5-7 SBR8U60P5-7 Diodes Incorporated SBR8U60P5.pdf Description: DIODE SBR 60V 8A POWERDI5
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
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AP65400SP-13 AP65400SP-13 Diodes Incorporated AP65400.pdf Description: IC REG BUCK ADJUSTABLE 4A 8SO
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AP65500SP-13 AP65500SP-13 Diodes Incorporated AP65500.pdf Description: IC REG BUCK ADJ 5A SYNC 8-SO
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DMN6140L-7 DMN6140L-7 Diodes Incorporated DMN6140L.pdf Description: MOSFET N-CH 60V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
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DMN10H220L-13 DMN10H220L-13 Diodes Incorporated DMN10H220L.pdf Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
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DMN6140L-13 DMN6140L-13 Diodes Incorporated DMN6140L.pdf Description: MOSFET N-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
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AL5811EV2 AL5811EV2 Diodes Incorporated AL5811EV2.pdf Description: EVAL BOARD FOR AL5811
Outputs and Type: 1 Non-Isolated Output
Utilized IC / Part: AL5811
Current - Output / Channel: 75mA
Contents: Board(s)
Voltage - Input: 3.5V ~ 60V
Voltage - Output: 1V ~ 60V
Packaging: Box
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AL5812EV2 AL5812EV2 Diodes Incorporated AL5812EV2-UserGuide.pdf Description: EVAL BOARD FOR AL5812
Part Status: Active
Outputs and Type: 1, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: AL5812
Current - Output / Channel: 150mA
Voltage - Input: 3.5V ~ 60V
Voltage - Output: 1V ~ 60V
Packaging: Box
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AL5812EV3 AL5812EV3 Diodes Incorporated AL5812EV3-UserGuide.pdf Description: EVAL BRD LED DRIVER ADJ LINEAR
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AL8807EV1 Diodes Incorporated Description: EVAL BOARD FOR AL8807
Contents: Board(s)
Utilized IC / Part: AL8807
Current - Output / Channel: 1A
Voltage - Input: 6V ~ 36V
Features: Dimmable
Packaging: Box
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
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AL8807EV2 Diodes Incorporated Description: EVAL BOARD FOR AL8807
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: AL8807
Current - Output / Channel: 1A
Voltage - Input: 6V ~ 36V
Features: Dimmable
Packaging: Box
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AL8807EV3 Diodes Incorporated Description: EVAL BOARD FOR AL8807
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: AL8807
Current - Output / Channel: 1A
Voltage - Input: 6V ~ 36V
Features: Dimmable
Packaging: Box
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AP3440FNTR-G1 AP3440FNTR-G1 Diodes Incorporated AP3440.pdf Description: IC REG BUCK ADJ 4A 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: U-QFN3030-16 (Type B)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.803V
Part Status: Obsolete
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AP7176BFN-7 AP7176BFN-7 Diodes Incorporated AP7176B.pdf Description: IC REG LINEAR POS ADJ 3A 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 3.65V
Number of Regulators: 1
Supplier Device Package: U-DFN3030-10
Voltage - Output (Max): 3.12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.53V @ 3A
Protection Features: Over Current, Over Temperature, Power On Reset (POR), Short Circuit, Soft Start
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DMN2011UFDE-7 DMN2011UFDE-7 Diodes Incorporated DMN2011UFDE.pdf Description: MOSFET N-CH 20V 11.7A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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DMN3065LW-13 DMN3065LW-13 Diodes Incorporated DMN3065LW.pdf Description: MOSFET N-CH 30V 4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
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DMP1022UFDF-7 DMP1022UFDF-7 Diodes Incorporated DMP1022UFDF.pdf Description: MOSFET P-CH 12V 9.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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SBRT25U80SLP-13 SBRT25U80SLP-13 Diodes Incorporated Description: DIODE SBR 80V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
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AP65403SP-13 AP65403SP-13 Diodes Incorporated AP65403.pdf Description: IC REG BUCK ADJ 4A 8SO
Voltage - Output (Min/Fixed): 2.5V
Voltage - Input (Min): 4.75V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 750kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT585B10T-7 BZT585B10T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 10V 350MW SOD523
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT585B12T-7 BZT585B12T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 12V 350MW SOD523
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT585B13T-7 BZT585B13T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 13V 350MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT585B15T-7 BZT585B15T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 15V 350MW SOD523
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
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BZT585B16T-7 BZT585B16T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 16V 350MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT585B18T-7 BZT585B18T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 18V 350MW SOD523
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
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BZT585B20T-7 BZT585B20T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 20V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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BZT585B24T-7 BZT585B24T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 24V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
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BZT585B27T-7 BZT585B27T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 27V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
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BZT585B2V4T-7 BZT585B2V4T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 2.4V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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BZT585B2V7T-7 BZT585B2V7T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 2.7V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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15000+0.043 EUR
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BZT585B30T-7 BZT585B30T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 30V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
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BZT585B39T-7 BZT585B39T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 39V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
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BZT585B3V3T-7 BZT585B3V3T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 3.3V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BZT585B3V6T-7 BZT585B3V6T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 3.6V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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DMN53D0LW-13 DMN53D0LW.pdf
DMN53D0LW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 360MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DMP2066LVT-13 DMP2066LVT.pdf
DMP2066LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.5A TSOT26
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Produkt ist nicht verfügbar
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DMP3017SFG-13 DMP3017SFG.pdf
DMP3017SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Produkt ist nicht verfügbar
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DMP3025LK3-13-01
DMP3025LK3-13-01
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.6A TO252
Produkt ist nicht verfügbar
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MBRF30100CT-LJ MBR%28F%2930100CT.pdf
MBRF30100CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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NIS5132MN2-FN-7 NIS5132.pdf
NIS5132MN2-FN-7
Hersteller: Diodes Incorporated
Description: IC ELECTRONIC FUSE 10UDFN
Supplier Device Package: U-DFN3030-10
Operating Temperature: -40°C ~ 150°C
Current - Output: 3.6A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLV271IW5-7 TLV27x.pdf
TLV271IW5-7
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SOT-25
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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3000+0.2 EUR
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ZXCT1109SAQ-7
Hersteller: Diodes Incorporated
Description: IC CURR MONITOR HIGH SIDE SOT23
Produkt ist nicht verfügbar
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AP2138R-1.5TRG1 AP2138-9.pdf
AP2138R-1.5TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.5V 250MA SOT89-3
Protection Features: Over Current
Voltage Dropout (Max): 1.3V @ 250mA
Voltage - Output (Min/Fixed): 1.5V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMG301NU-13 DMG301NU.pdf
DMG301NU-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 260MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V
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10000+0.18 EUR
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DMN10H220L-7 DMN10H220L.pdf
DMN10H220L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN2020UFCL-7 DMN2020UFCL.pdf
DMN2020UFCL-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
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3000+0.25 EUR
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DMN2990UFZ-7B DMN2990UFZ.pdf
DMN2990UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
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10000+0.16 EUR
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DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 300V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
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3000+0.32 EUR
6000+0.3 EUR
9000+0.28 EUR
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PAM8407DR PAM8407.pdf
PAM8407DR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 2.4W 16SO
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Active
Produkt ist nicht verfügbar
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SBR8U60P5-7 SBR8U60P5.pdf
SBR8U60P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
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1500+0.61 EUR
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ZXRE330ASA-7 ZXRE330.pdf
ZXRE330ASA-7
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.5% SOT23
Current - Output: 5 mA
Current - Cathode: 2 µA
Noise - 10Hz to 10kHz: 55µVrms
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-3
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 150ppm/°C
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
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3000+0.55 EUR
6000+0.52 EUR
9000+0.5 EUR
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30000+0.45 EUR
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AP65400SP-13 AP65400.pdf
AP65400SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJUSTABLE 4A 8SO
Produkt ist nicht verfügbar
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AP65500SP-13 AP65500.pdf
AP65500SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 5A SYNC 8-SO
Produkt ist nicht verfügbar
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DMG301NU-13 DMG301NU.pdf
DMG301NU-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 260MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 378782 Stücke:
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24+0.76 EUR
30+0.59 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.22 EUR
2000+0.21 EUR
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DMN10H220L-7 DMN10H220L.pdf
DMN10H220L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN2020UFCL-7 DMN2020UFCL.pdf
DMN2020UFCL-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1616-6 (Type E)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
auf Bestellung 1148299 Stücke:
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19+0.97 EUR
28+0.63 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
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DMN2990UFZ-7B DMN2990UFZ.pdf
DMN2990UFZ-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 1650325 Stücke:
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AnzahlPreis
21+0.84 EUR
28+0.64 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.18 EUR
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DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 300V 250MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 163650 Stücke:
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AnzahlPreis
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
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DMN6140L-7 DMN6140L.pdf
DMN6140L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
auf Bestellung 48091 Stücke:
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28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
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PAM8407DR PAM8407.pdf
PAM8407DR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 2.4W 16SO
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Active
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15+1.25 EUR
20+0.9 EUR
25+0.81 EUR
100+0.71 EUR
250+0.66 EUR
500+0.63 EUR
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SBR8U60P5-7 SBR8U60P5.pdf
SBR8U60P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 95398 Stücke:
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AnzahlPreis
12+1.58 EUR
17+1.1 EUR
100+0.86 EUR
500+0.67 EUR
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AP65400SP-13 AP65400.pdf
AP65400SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJUSTABLE 4A 8SO
Produkt ist nicht verfügbar
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AP65500SP-13 AP65500.pdf
AP65500SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 5A SYNC 8-SO
Produkt ist nicht verfügbar
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DMN6140L-7 DMN6140L.pdf
DMN6140L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
21000+0.1 EUR
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DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Produkt ist nicht verfügbar
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DMN6140L-13 DMN6140L.pdf
DMN6140L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
auf Bestellung 22800 Stücke:
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AnzahlPreis
10000+0.12 EUR
20000+0.11 EUR
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AL5811EV2 AL5811EV2.pdf
AL5811EV2
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5811
Outputs and Type: 1 Non-Isolated Output
Utilized IC / Part: AL5811
Current - Output / Channel: 75mA
Contents: Board(s)
Voltage - Input: 3.5V ~ 60V
Voltage - Output: 1V ~ 60V
Packaging: Box
auf Bestellung 3 Stücke:
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AnzahlPreis
1+94.18 EUR
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AL5812EV2 AL5812EV2-UserGuide.pdf
AL5812EV2
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5812
Part Status: Active
Outputs and Type: 1, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: AL5812
Current - Output / Channel: 150mA
Voltage - Input: 3.5V ~ 60V
Voltage - Output: 1V ~ 60V
Packaging: Box
Produkt ist nicht verfügbar
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AL5812EV3 AL5812EV3-UserGuide.pdf
AL5812EV3
Hersteller: Diodes Incorporated
Description: EVAL BRD LED DRIVER ADJ LINEAR
auf Bestellung 2 Stücke:
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AL8807EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807
Contents: Board(s)
Utilized IC / Part: AL8807
Current - Output / Channel: 1A
Voltage - Input: 6V ~ 36V
Features: Dimmable
Packaging: Box
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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AL8807EV2
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: AL8807
Current - Output / Channel: 1A
Voltage - Input: 6V ~ 36V
Features: Dimmable
Packaging: Box
Produkt ist nicht verfügbar
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AL8807EV3
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: AL8807
Current - Output / Channel: 1A
Voltage - Input: 6V ~ 36V
Features: Dimmable
Packaging: Box
Produkt ist nicht verfügbar
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AP3440FNTR-G1 AP3440.pdf
AP3440FNTR-G1
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 4A 16UQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: U-QFN3030-16 (Type B)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.803V
Part Status: Obsolete
Produkt ist nicht verfügbar
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AP7176BFN-7 AP7176B.pdf
AP7176BFN-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR POS ADJ 3A 10UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 3.65V
Number of Regulators: 1
Supplier Device Package: U-DFN3030-10
Voltage - Output (Max): 3.12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Voltage Dropout (Max): 0.53V @ 3A
Protection Features: Over Current, Over Temperature, Power On Reset (POR), Short Circuit, Soft Start
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
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DMN2011UFDE-7 DMN2011UFDE.pdf
DMN2011UFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.32 EUR
6000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
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DMN3065LW-13 DMN3065LW.pdf
DMN3065LW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.14 EUR
20000+0.13 EUR
30000+0.12 EUR
70000+0.11 EUR
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DMP1022UFDF-7 DMP1022UFDF.pdf
DMP1022UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.28 EUR
Mindestbestellmenge: 3000 Stücke
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SBRT25U80SLP-13
SBRT25U80SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 80V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 25 A
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Produkt ist nicht verfügbar
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AP65403SP-13 AP65403.pdf
AP65403SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 4A 8SO
Voltage - Output (Min/Fixed): 2.5V
Voltage - Input (Min): 4.75V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: 8-SO-EP
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 750kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZT585B10T-7 BZT585BxVxT.pdf
BZT585B10T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 350MW SOD523
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 828000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.065 EUR
6000+0.064 EUR
9000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B12T-7 BZT585BxVxT.pdf
BZT585B12T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 350MW SOD523
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.069 EUR
6000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B13T-7 BZT585BxVxT.pdf
BZT585B13T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 350MW SOD523
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Grade: Automotive
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 204000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B15T-7 BZT585BxVxT.pdf
BZT585B15T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 350MW SOD523
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.052 EUR
6000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B16T-7 BZT585BxVxT.pdf
BZT585B16T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 350MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
auf Bestellung 672000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.047 EUR
6000+0.045 EUR
9000+0.042 EUR
21000+0.039 EUR
30000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B18T-7 BZT585BxVxT.pdf
BZT585B18T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 350MW SOD523
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZT585B20T-7 BZT585BxVxT.pdf
BZT585B20T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
auf Bestellung 246000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.052 EUR
6000+0.048 EUR
9000+0.044 EUR
15000+0.043 EUR
21000+0.042 EUR
75000+0.041 EUR
150000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B24T-7 BZT585BxVxT.pdf
BZT585B24T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 24V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.066 EUR
6000+0.059 EUR
9000+0.055 EUR
15000+0.051 EUR
21000+0.049 EUR
30000+0.047 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B27T-7 BZT585BxVxT.pdf
BZT585B27T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.069 EUR
6000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B2V4T-7 BZT585BxVxT.pdf
BZT585B2V4T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.4V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.05 EUR
6000+0.047 EUR
9000+0.044 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B2V7T-7 BZT585BxVxT.pdf
BZT585B2V7T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.052 EUR
6000+0.048 EUR
9000+0.044 EUR
15000+0.043 EUR
21000+0.042 EUR
75000+0.041 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B30T-7 BZT585BxVxT.pdf
BZT585B30T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
auf Bestellung 387000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.052 EUR
6000+0.048 EUR
9000+0.044 EUR
15000+0.043 EUR
21000+0.042 EUR
75000+0.041 EUR
150000+0.036 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B39T-7 BZT585BxVxT.pdf
BZT585B39T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
auf Bestellung 1242000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.052 EUR
6000+0.048 EUR
9000+0.044 EUR
15000+0.043 EUR
21000+0.042 EUR
75000+0.041 EUR
Mindestbestellmenge: 3000 Stücke
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BZT585B3V3T-7 BZT585BxVxT.pdf
BZT585B3V3T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.044 EUR
6000+0.043 EUR
9000+0.042 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZT585B3V6T-7 BZT585BxVxT.pdf
BZT585B3V6T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.042 EUR
6000+0.041 EUR
9000+0.038 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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