Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (4209) > Seite 41 nach 71
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR40045CTR | GeneSiC Semiconductor |
Diode Modules 45V 400A Schottky Recovery |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR40045CTRL | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 45V 400A Reverse |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR40045CTS | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 400A SOT227Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 400A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Current - Reverse Leakage @ Vr: 5 µA @ 36 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR40060CT | GeneSiC Semiconductor |
Diode Modules 60V 400A Schottky Recovery |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR40060CT | GeneSiC Semiconductor |
Diode Schottky 60V 400A 3-Pin Twin Tower |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR40060CTR | GeneSiC Semiconductor |
Diode Modules 60V 400A Schottky Recovery |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR40080CT | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56R |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR40080CTR | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500100CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500100CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500100CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500100CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500150CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500150CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 150V 500A Forward |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500150CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500150CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 150V 500A Reverse |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500200CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 200V 500A Forward |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500200CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 200V 500A Reverse |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR500200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50020CT | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 20P/14R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50020CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50020CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MBR50020CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 20P/14R |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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MBR50030CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 30P/21R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50030CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50030CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MBR50030CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 30P/21R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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MBR50035CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50035CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50035CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50035CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50040CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 40P/28R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50040CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50040CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 40V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50040CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 40P/28R |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50045CT | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50045CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50045CT | GeneSiC Semiconductor |
Diode Schottky 45V 500A 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50045CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 45V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50045CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50060CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 600V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50060CT | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50060CTR | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50060CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 600V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50080CT | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50080CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50080CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 250A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR50080CTR | GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600100CT | GeneSiC Semiconductor |
Diode Schottky 100V 600A 3-Pin Twin Tower |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600100CT | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70 |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR600100CTR | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600150CT | GeneSiC Semiconductor |
Diode Modules 150V 600A Forward |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600150CTR | GeneSiC Semiconductor |
Diode Modules 150V 600A Reverse |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600200CT | GeneSiC Semiconductor |
Diode Modules 150V 600A Forward |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600200CTR | GeneSiC Semiconductor |
Diode Modules 150V 600A Reverse |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR600200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR60020CT | GeneSiC Semiconductor |
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A 20P/14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR60020CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MBR40045CTR |
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Hersteller: GeneSiC Semiconductor
Diode Modules 45V 400A Schottky Recovery
Diode Modules 45V 400A Schottky Recovery
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 155.83 EUR |
| 10+ | 136.68 EUR |
| 25+ | 129.73 EUR |
| 120+ | 129.62 EUR |
| MBR40045CTRL |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 45V 400A Reverse
Schottky Diodes & Rectifiers 45V 400A Reverse
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR40045CTS |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 400A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Description: DIODE MOD SCHOTT 45V 400A SOT227
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR40060CT |
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Hersteller: GeneSiC Semiconductor
Diode Modules 60V 400A Schottky Recovery
Diode Modules 60V 400A Schottky Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR40060CT |
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Hersteller: GeneSiC Semiconductor
Diode Schottky 60V 400A 3-Pin Twin Tower
Diode Schottky 60V 400A 3-Pin Twin Tower
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 214.72 EUR |
| 2+ | 199.63 EUR |
| 3+ | 186.18 EUR |
| 5+ | 174.05 EUR |
| 10+ | 162.99 EUR |
| MBR40060CTR |
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Hersteller: GeneSiC Semiconductor
Diode Modules 60V 400A Schottky Recovery
Diode Modules 60V 400A Schottky Recovery
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR40080CT |
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Hersteller: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56R
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56R
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 155.83 EUR |
| 10+ | 137.03 EUR |
| 25+ | 129.62 EUR |
| MBR40080CTR |
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Hersteller: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56R
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500100CT |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MBR500100CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500100CTR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500100CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A100P/70R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500150CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500150CT |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 150V 500A Forward
Schottky Diodes & Rectifiers 150V 500A Forward
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500150CTR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500150CTR |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 150V 500A Reverse
Schottky Diodes & Rectifiers 150V 500A Reverse
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500200CT |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 200V 500A Forward
Schottky Diodes & Rectifiers 200V 500A Forward
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500200CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500200CTR |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 200V 500A Reverse
Schottky Diodes & Rectifiers 200V 500A Reverse
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR500200CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50020CT |
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Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 20P/14R
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 20P/14R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50020CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50020CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50020CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 20P/14R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 20P/14R
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MBR50030CT |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 30P/21R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 30P/21R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50030CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50030CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50030CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 30P/21R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 30P/21R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50035CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50035CT |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50035CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50035CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50040CT |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 40P/28R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 40P/28R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50040CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50040CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50040CTR |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 40P/28R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 40P/28R
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MBR50045CT |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MBR50045CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50045CT |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Schottky 45V 500A 3-Pin Twin Tower
Diode Schottky 45V 500A 3-Pin Twin Tower
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50045CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50045CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50060CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50060CT |
![]() |
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MBR50060CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MBR50060CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50080CT |
![]() |
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50080CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50080CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR50080CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600100CT |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Schottky 100V 600A 3-Pin Twin Tower
Diode Schottky 100V 600A 3-Pin Twin Tower
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600100CT |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 199.81 EUR |
| 10+ | 177.41 EUR |
| 25+ | 169.7 EUR |
| MBR600100CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A100P/70
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600150CT |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules 150V 600A Forward
Diode Modules 150V 600A Forward
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600150CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules 150V 600A Reverse
Diode Modules 150V 600A Reverse
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600200CT |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules 150V 600A Forward
Diode Modules 150V 600A Forward
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600200CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600200CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules 150V 600A Reverse
Diode Modules 150V 600A Reverse
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR600200CTR |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR60020CT |
![]() |
Hersteller: GeneSiC Semiconductor
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A 20P/14
Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 600A 20P/14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR60020CT |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




