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SPA04N80C3XKSA1 SPA04N80C3XKSA1 Infineon Technologies SPP_A04N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163851748000c0 Description: MOSFET N-CH 800V 4A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
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SPP100N03S2-03 SPP100N03S2-03 Infineon Technologies SP%28I%2CP%2CB%29100N03S2-03.pdf Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IPU09N03LA G IPU09N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2909N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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IPP03N03LA IPP03N03LA Infineon Technologies IPI%2C%20IPP03N03LA.pdf Description: MOSFET N-CH 25V 80A TO220-3
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
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IPU06N03LAGXK IPU06N03LAGXK Infineon Technologies IP%28D%2CF%2CS%2CU%2906N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Power Dissipation (Max): 83W (Tc)
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IPU07N03LA IPU07N03LA Infineon Technologies IPU07N03LA_Rev1.1.pdf Description: MOSFET N-CH 25V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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SDP20S30 SDP20S30 Infineon Technologies SDP20S30.pdf Description: DIODE ARRAY SCHOTTKY 300V TO220
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IPU13N03LA G IPU13N03LA G Infineon Technologies ipd13n03la_rev2.1_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
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IPP09N03LA IPP09N03LA Infineon Technologies IP%28I%2CP%2909N03LA.pdf Description: MOSFET N-CH 25V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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SDT04S60 SDT04S60 Infineon Technologies SDP_D_T04S60_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b43951af6d69 description Description: DIODE SIL CARB 600V 4A TO220-2-2
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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SDT10S30 SDT10S30 Infineon Technologies SDP10S30,SDT10S30.pdf description Description: DIODE SCHOTTKY 300V 10A TO220-2
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IPP14N03LA IPP14N03LA Infineon Technologies IPP14N03LA_Rev1.7_G.pdf Description: MOSFET N-CH 25V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
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IPP05N03LA IPP05N03LA Infineon Technologies IPP05N03LA_Rev1.2.pdf Description: MOSFET N-CH 25V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP06N03LA IPP06N03LA Infineon Technologies IPP06N03LA_Rev1.2.pdf Description: MOSFET N-CH 25V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
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SPA04N50C3XKSA1 SPA04N50C3XKSA1 Infineon Technologies Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4 Description: MOSFET N-CH 560V 4.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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ICE2A265FKLA1 ICE2A265FKLA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 52 W
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ICE2A0565FKLA1 ICE2A0565FKLA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 23 W
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ICE2A165FKLA1 ICE2A165FKLA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 31 W
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ICE2A180Z ICE2A180Z Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 29 W
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ICE2A365FKLA1 ICE2A365FKLA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8-4
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 67 W
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ICE2A280Z ICE2A280Z Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac description Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 50 W
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IPP04N03LA IPP04N03LA Infineon Technologies IPI04N03LA%2C%20IPP04N03LA.pdf Description: MOSFET N-CH 25V 80A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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ICE2A765PBKSA1 ICE2A765PBKSA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SW FLYBACK TO220-6
Power (Watts): 240 W
Part Status: Obsolete
Voltage - Start Up: 13.5 V
Supplier Device Package: PG-TO220-6-47
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Tube
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
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ICE2B265FKLA1 ICE2B265FKLA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 52 W
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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ICE2B765PCKSA1 ICE2B765PCKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC OFFLINE SW FLYBACK TO220-6
Power (Watts): 240 W
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-6-47
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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SDT12S60 SDT12S60 Infineon Technologies SDT12S60.pdf Description: DIODE SIL CARB 600V 12A PGTO2202
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 450pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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SPP04N50C3HKSA1 SPP04N50C3HKSA1 Infineon Technologies Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4 Description: MOSFET N-CH 560V 4.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP07N60C3XKSA1 SPP07N60C3XKSA1 Infineon Technologies Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 925 Stücke:
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4+5.87 EUR
50+2.93 EUR
100+2.64 EUR
500+2.25 EUR
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SPP20N60C3HKSA1 SPP20N60C3HKSA1 Infineon Technologies SPP_I_A20N60C3_Rev.3.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304318f3fe290119090054e32a20 Description: MOSFET N-CH 600V 20.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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SPP17N80C3XKSA1 SPP17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.28 EUR
50+5.37 EUR
100+4.89 EUR
500+4.06 EUR
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SPP21N50C3HKSA1 SPP21N50C3HKSA1 Infineon Technologies SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Description: MOSFET N-CH 560V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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SPA16N50C3XKSA1 SPA16N50C3XKSA1 Infineon Technologies SPP_I_A16N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637e882e70061 Description: MOSFET N-CH 560V 16A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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SPP02N60C3HKSA1 SPP02N60C3HKSA1 Infineon Technologies Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f Description: MOSFET N-CH 650V 1.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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SPP03N60C3HKSA1 SPP03N60C3HKSA1 Infineon Technologies SPP_A03N60C3_Rev.2.6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dfb1c492b Description: MOSFET N-CH 650V 3.2A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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SPI07N60C3HKSA1 SPI07N60C3HKSA1 Infineon Technologies Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c Description: MOSFET N-CH 650V 7.3A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.9V @ 350µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Produkt ist nicht verfügbar
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SPP16N50C3HKSA1 SPP16N50C3HKSA1 Infineon Technologies SPP_I_A16N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637e882e70061 Description: MOSFET N-CH 560V 16A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
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SPA12N50C3XKSA1 SPA12N50C3XKSA1 Infineon Technologies SPx12N50C3.pdf Description: MOSFET N-CH 560V 11.6A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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SPP12N50C3HKSA1 SPP12N50C3HKSA1 Infineon Technologies SPx12N50C3.pdf Description: MOSFET N-CH 560V 11.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPA04N60C3XKSA1 SPA04N60C3XKSA1 Infineon Technologies SPP_A04N60C3_Rev.3.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900 Description: MOSFET N-CH 650V 4.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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SPP04N60C3HKSA1 SPP04N60C3HKSA1 Infineon Technologies SPP_A04N60C3_Rev.3.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900 Description: MOSFET N-CH 650V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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SPP04N80C3XKSA1 SPP04N80C3XKSA1 Infineon Technologies Infineon-SPP04N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a8f71e205c68 Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.69 EUR
50+1.78 EUR
100+1.61 EUR
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SPA06N80C3XKSA1 SPA06N80C3XKSA1 Infineon Technologies SPP_A06N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163854727600cf Description: MOSFET N-CH 800V 6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 7627 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.94 EUR
50+2.43 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.62 EUR
2000+1.5 EUR
5000+1.38 EUR
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SPA08N50C3XKSA1 SPA08N50C3XKSA1 Infineon Technologies SP%28P%2CI%2CA%2908N50C3.pdf Description: MOSFET N-CH 560V 7.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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SPA08N80C3XKSA1 SPA08N80C3XKSA1 Infineon Technologies SPP_I_A08N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a6011638595c9600e0 Description: MOSFET N-CH 800V 8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.06 EUR
50+3.02 EUR
100+2.73 EUR
500+2.21 EUR
1000+2.05 EUR
2000+1.9 EUR
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SPP11N80C3XKSA1 SPP11N80C3XKSA1 Infineon Technologies Infineon-SPP11N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a9132fee5c9a Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 2505 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.33 EUR
50+3.7 EUR
100+3.36 EUR
500+2.74 EUR
1000+2.55 EUR
2000+2.38 EUR
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TDA21201-S7 TDA21201-S7 Infineon Technologies TDA21201.pdf Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
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BSO201SPNTMA1 BSO201SPNTMA1 Infineon Technologies BSO201SP_211201.pdf Description: MOSFET P-CH 20V 14.9A 8DSO
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
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BSO203PNTMA1 BSO203PNTMA1 Infineon Technologies BSO203P_080102.pdf Description: MOSFET 2P-CH 20V 8.2A 8SOIC
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BSO203SPNTMA1 BSO203SPNTMA1 Infineon Technologies BSO203SP_070102.pdf Description: MOSFET P-CH 20V 9A 8DSO
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BSO211PNTMA1 BSO211PNTMA1 Infineon Technologies BSO211P_220102.pdf Description: MOSFET 2P-CH 20V 4.7A 8DSO
Supplier Device Package: PG-DSO-8
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
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BSO301SPNTMA1 BSO301SPNTMA1 Infineon Technologies BSO301SP_170702.pdf Description: MOSFET P-CH 30V 12.6A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BSO303SPNTMA1 BSO303SPNTMA1 Infineon Technologies BSO303SP_080102.pdf Description: MOSFET P-CH 30V 8.9A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 1754 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
Power Dissipation (Max): 2.35W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BSO4804 BSO4804 Infineon Technologies BSO4804.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
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BSO4822 BSO4822 Infineon Technologies BSO4822_280102.pdf Description: MOSFET N-CH 30V 12.7A 8-SOIC
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BSO612CV BSO612CV Infineon Technologies BSO612CV.pdf Description: MOSFET N/P-CH 60V 3A/2A 8SOIC
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BSS209PW BSS209PW Infineon Technologies BSS209PW_051201.pdf Description: MOSFET P-CH 20V 580MA SOT323-3
Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Power Dissipation (Max): 520mW (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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BSS670S2L BSS670S2L Infineon Technologies BSS670S2L.pdf Description: MOSFET N-CH 55V 540MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BSS83PE6327 BSS83PE6327 Infineon Technologies bss83p.pdf Description: MOSFET P-CH 60V 330MA SOT23-3
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IPD04N03LA G IPD04N03LA G Infineon Technologies IP%28D%2CF%2CS%2CU%2904N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IPD13N03LA G IPD13N03LA G Infineon Technologies ipd13n03la_rev2.1_g.pdf Description: MOSFET N-CH 25V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SPA04N80C3XKSA1 SPP_A04N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163851748000c0
SPA04N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Produkt ist nicht verfügbar
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SPP100N03S2-03 SP%28I%2CP%2CB%29100N03S2-03.pdf
SPP100N03S2-03
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IPU09N03LA G IP%28D%2CF%2CS%2CU%2909N03LA_G.pdf
IPU09N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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IPP03N03LA IPI%2C%20IPP03N03LA.pdf
IPP03N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO220-3
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
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IPU06N03LAGXK IP%28D%2CF%2CS%2CU%2906N03LA_G.pdf
IPU06N03LAGXK
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Power Dissipation (Max): 83W (Tc)
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IPU07N03LA IPU07N03LA_Rev1.1.pdf
IPU07N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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SDP20S30 SDP20S30.pdf
SDP20S30
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 300V TO220
Produkt ist nicht verfügbar
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IPU13N03LA G ipd13n03la_rev2.1_g.pdf
IPU13N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
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IPP09N03LA IP%28I%2CP%2909N03LA.pdf
IPP09N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V
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SDT04S60 description SDP_D_T04S60_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b43951af6d69
SDT04S60
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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SDT10S30 description SDP10S30,SDT10S30.pdf
SDT10S30
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 300V 10A TO220-2
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IPP14N03LA IPP14N03LA_Rev1.7_G.pdf
IPP14N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
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IPP05N03LA IPP05N03LA_Rev1.2.pdf
IPP05N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPP06N03LA IPP06N03LA_Rev1.2.pdf
IPP06N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA04N50C3XKSA1 Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4
SPA04N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 4.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Produkt ist nicht verfügbar
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ICE2A265FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A265FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 52 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2A0565FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A0565FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 23 W
Produkt ist nicht verfügbar
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ICE2A165FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A165FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 31 W
Produkt ist nicht verfügbar
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ICE2A180Z ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A180Z
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 29 W
Produkt ist nicht verfügbar
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ICE2A365FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A365FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8-4
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 67 W
Produkt ist nicht verfügbar
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ICE2A280Z description ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A280Z
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 50 W
Produkt ist nicht verfügbar
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IPP04N03LA IPI04N03LA%2C%20IPP04N03LA.pdf
IPP04N03LA
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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ICE2A765PBKSA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A765PBKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Power (Watts): 240 W
Part Status: Obsolete
Voltage - Start Up: 13.5 V
Supplier Device Package: PG-TO220-6-47
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Tube
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Produkt ist nicht verfügbar
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ICE2B265FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2B265FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 52 W
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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ICE2B765PCKSA1 fundamentals-of-power-semiconductors
ICE2B765PCKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Power (Watts): 240 W
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-6-47
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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SDT12S60 SDT12S60.pdf
SDT12S60
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 12A PGTO2202
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 450pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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SPP04N50C3HKSA1 Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4
SPP04N50C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 4.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP07N60C3XKSA1 Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c
SPP07N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.87 EUR
50+2.93 EUR
100+2.64 EUR
500+2.25 EUR
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SPP20N60C3HKSA1 SPP_I_A20N60C3_Rev.3.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304318f3fe290119090054e32a20
SPP20N60C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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SPP17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPP17N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
50+5.37 EUR
100+4.89 EUR
500+4.06 EUR
Mindestbestellmenge: 3 Stücke
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SPP21N50C3HKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
SPP21N50C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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SPA16N50C3XKSA1 SPP_I_A16N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637e882e70061
SPA16N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 16A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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SPP02N60C3HKSA1 Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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SPP03N60C3HKSA1 SPP_A03N60C3_Rev.2.6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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SPI07N60C3HKSA1 Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c
SPI07N60C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.9V @ 350µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Produkt ist nicht verfügbar
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SPP16N50C3HKSA1 SPP_I_A16N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637e882e70061
SPP16N50C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 16A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Produkt ist nicht verfügbar
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SPA12N50C3XKSA1 SPx12N50C3.pdf
SPA12N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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SPP12N50C3HKSA1 SPx12N50C3.pdf
SPP12N50C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPA04N60C3XKSA1 SPP_A04N60C3_Rev.3.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900
SPA04N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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SPP04N60C3HKSA1 SPP_A04N60C3_Rev.3.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900
SPP04N60C3HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
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SPP04N80C3XKSA1 Infineon-SPP04N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a8f71e205c68
SPP04N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.69 EUR
50+1.78 EUR
100+1.61 EUR
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SPA06N80C3XKSA1 SPP_A06N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163854727600cf
SPA06N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 7627 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.94 EUR
50+2.43 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.62 EUR
2000+1.5 EUR
5000+1.38 EUR
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SPA08N50C3XKSA1 SP%28P%2CI%2CA%2908N50C3.pdf
SPA08N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 7.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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SPA08N80C3XKSA1 SPP_I_A08N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a6011638595c9600e0
SPA08N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.06 EUR
50+3.02 EUR
100+2.73 EUR
500+2.21 EUR
1000+2.05 EUR
2000+1.9 EUR
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SPP11N80C3XKSA1 Infineon-SPP11N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a9132fee5c9a
SPP11N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 2505 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.33 EUR
50+3.7 EUR
100+3.36 EUR
500+2.74 EUR
1000+2.55 EUR
2000+2.38 EUR
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TDA21201-S7 TDA21201.pdf
TDA21201-S7
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
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BSO201SPNTMA1 BSO201SP_211201.pdf
BSO201SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 14.9A 8DSO
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Produkt ist nicht verfügbar
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BSO203PNTMA1 BSO203P_080102.pdf
BSO203PNTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 8.2A 8SOIC
Produkt ist nicht verfügbar
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BSO203SPNTMA1 BSO203SP_070102.pdf
BSO203SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 9A 8DSO
Produkt ist nicht verfügbar
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BSO211PNTMA1 BSO211P_220102.pdf
BSO211PNTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8DSO
Supplier Device Package: PG-DSO-8
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
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BSO301SPNTMA1 BSO301SP_170702.pdf
BSO301SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSO303SPNTMA1 BSO303SP_080102.pdf
BSO303SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 8.9A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 1754 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
Power Dissipation (Max): 2.35W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSO4804 BSO4804.pdf
BSO4804
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8SOIC
Produkt ist nicht verfügbar
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BSO4822 BSO4822_280102.pdf
BSO4822
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12.7A 8-SOIC
Produkt ist nicht verfügbar
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BSO612CV BSO612CV.pdf
BSO612CV
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 60V 3A/2A 8SOIC
Produkt ist nicht verfügbar
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BSS209PW BSS209PW_051201.pdf
BSS209PW
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 580MA SOT323-3
Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Power Dissipation (Max): 520mW (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS670S2L BSS670S2L.pdf
BSS670S2L
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS83PE6327 bss83p.pdf
BSS83PE6327
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IPD04N03LA G IP%28D%2CF%2CS%2CU%2904N03LA_G.pdf
IPD04N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 5199 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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IPD13N03LA G ipd13n03la_rev2.1_g.pdf
IPD13N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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