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CYW20702A1KWFBGT CYW20702A1KWFBGT Infineon Technologies Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20732E CYW20732E Infineon Technologies CYW20732E_Web.pdf Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 622 Stücke:
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3+6.90 EUR
Mindestbestellmenge: 3
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CYW20732E CYW20732E Infineon Technologies CYW20732E_Web.pdf Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP0400N IPP0400N Infineon Technologies Description: IPP0400N
Packaging: Bulk
auf Bestellung 72000 Stücke:
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544+0.92 EUR
Mindestbestellmenge: 544
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T2180N14TOFVTXPSA1 T2180N14TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1800V 4460A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 FP30R06KE3BPSA1 Infineon Technologies Infineon-FP30R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43328f05a7f Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
auf Bestellung 1 Stücke:
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1+212.52 EUR
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IPT014N08NM5ATMA1 IPT014N08NM5ATMA1 Infineon Technologies Infineon-IPT014N08NM5-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177b7718ecc5c69 Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Produkt ist nicht verfügbar
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IPT014N08NM5ATMA1 IPT014N08NM5ATMA1 Infineon Technologies Infineon-IPT014N08NM5-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177b7718ecc5c69 Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
auf Bestellung 2194 Stücke:
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2+11.35 EUR
10+7.66 EUR
100+5.57 EUR
500+4.79 EUR
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IPT010N08NM5ATMA1 IPT010N08NM5ATMA1 Infineon Technologies Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
Produkt ist nicht verfügbar
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IPT010N08NM5ATMA1 IPT010N08NM5ATMA1 Infineon Technologies Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
auf Bestellung 893 Stücke:
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2+12.83 EUR
10+9.07 EUR
100+6.67 EUR
500+6.28 EUR
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IPT063N15N5ATMA1 IPT063N15N5ATMA1 Infineon Technologies Infineon-IPT063N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb2293bc6ca2 Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
Produkt ist nicht verfügbar
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IPT063N15N5ATMA1 IPT063N15N5ATMA1 Infineon Technologies Infineon-IPT063N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb2293bc6ca2 Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
auf Bestellung 172 Stücke:
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3+8.15 EUR
10+5.43 EUR
100+3.88 EUR
Mindestbestellmenge: 3
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IPT026N10N5ATMA1 IPT026N10N5ATMA1 Infineon Technologies Infineon-IPT026N10N5-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016ac029615332f7 Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 4000 Stücke:
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2000+2.48 EUR
Mindestbestellmenge: 2000
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IPT026N10N5ATMA1 IPT026N10N5ATMA1 Infineon Technologies Infineon-IPT026N10N5-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016ac029615332f7 Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 5612 Stücke:
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3+7.15 EUR
10+4.71 EUR
100+3.33 EUR
500+2.73 EUR
1000+2.54 EUR
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FZ3600R12HP4PHPSA1 FZ3600R12HP4PHPSA1 Infineon Technologies Description: IGBT MOD 1200V 4930A AGIHMB190-2
auf Bestellung 54 Stücke:
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1+2324.43 EUR
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IPI65R110CFD IPI65R110CFD Infineon Technologies INFNS16577-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 430 Stücke:
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119+4.47 EUR
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FP25R12W2T4PB11BPSA1 FP25R12W2T4PB11BPSA1 Infineon Technologies Infineon-FP25R12W2T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfc4875967263 Description: IGBT MOD 1200V 50A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 11 Stücke:
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6+99.51 EUR
Mindestbestellmenge: 6
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IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Infineon Technologies Infineon-IPDQ60R040S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06c46227157c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 750 Stücke:
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750+7.17 EUR
Mindestbestellmenge: 750
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IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Infineon Technologies Infineon-IPDQ60R040S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06c46227157c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.06 EUR
10+9.30 EUR
25+8.61 EUR
100+7.86 EUR
250+7.50 EUR
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IPDQ60R065S7XTMA1 IPDQ60R065S7XTMA1 Infineon Technologies Infineon-IPDQ60R065S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06d6b13a15c6 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60R065S7XTMA1 IPDQ60R065S7XTMA1 Infineon Technologies Infineon-IPDQ60R065S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06d6b13a15c6 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.66 EUR
10+6.61 EUR
25+6.09 EUR
100+5.53 EUR
250+5.26 EUR
Mindestbestellmenge: 3
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BSM25GP120B2BOSA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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TLE4263GM TLE4263GM Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR VOLT TLE4263
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.3 mA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Produkt ist nicht verfügbar
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IPB100P03P3L-04 IPB100P03P3L-04 Infineon Technologies INFNS11433-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 475µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V
Produkt ist nicht verfügbar
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IPB60R120C7ATMA1 IPB60R120C7ATMA1 Infineon Technologies Infineon-IPB60R120C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac3d3b5ea3 Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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SH100G3016A1 Infineon Technologies Description: SH100G3 - GATE ARRAY
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PEF22822FV1.2 Infineon Technologies Description: IC DIGITAL CHIP 10 BASES
Packaging: Bulk
auf Bestellung 360 Stücke:
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IPP80R900P7XKSA1 IPP80R900P7XKSA1 Infineon Technologies Infineon-IPP80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b431a6d634099 Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
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FS3L40R07W2H5FB11BOMA1 FS3L40R07W2H5FB11BOMA1 Infineon Technologies Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5 Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BTS3125TFDEMOBOARDTOBO1 BTS3125TFDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_Description_BTS3XXXTF-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40e2420320 Description: BTS3125TF DEMOBOARD
Packaging: Box
Supplied Contents: Board(s)
Part Status: Active
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IAUA250N04S6N008AUMA1 IAUA250N04S6N008AUMA1 Infineon Technologies Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b Description: OPTIMOS POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IAUA250N04S6N008AUMA1 IAUA250N04S6N008AUMA1 Infineon Technologies Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b Description: OPTIMOS POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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10+3.20 EUR
100+2.33 EUR
500+1.96 EUR
1000+1.81 EUR
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TLE6281G TLE6281G Infineon Technologies tle6281g_ds_rev2.3.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 850mA
Interface: PWM, Step/Direction
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 7.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 10V
Supplier Device Package: PG-DSO-20
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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PXM1310CDMG023XTMA1 PXM1310CDMG023XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PXM1310CDM - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40
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FS100R12W3T7B11BPSA1 FS100R12W3T7B11BPSA1 Infineon Technologies Infineon-FS100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b19326390c Description: LOW POWER EASY AG-EASY3B-711
Packaging: Tray
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BGS14WMA9E6327XTSA1 BGS14WMA9E6327XTSA1 Infineon Technologies Infineon-BGS14WMA9-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b89d2bb34472a Description: IC RF SWITCH SP4T 6GHZ ATSLP9-50
Packaging: Tape & Reel (TR)
Package / Case: 9-UFLGA
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.15dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 25dB
Supplier Device Package: PG-ATSLP-9-50
IIP3: 65dBm
Part Status: Active
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BGS14WMA9E6327XTSA1 BGS14WMA9E6327XTSA1 Infineon Technologies Infineon-BGS14WMA9-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b89d2bb34472a Description: IC RF SWITCH SP4T 6GHZ ATSLP9-50
Packaging: Cut Tape (CT)
Package / Case: 9-UFLGA
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.15dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 25dB
Supplier Device Package: PG-ATSLP-9-50
IIP3: 65dBm
Part Status: Active
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IRFS7540TRLPBF IRFS7540TRLPBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
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TT162N16KOFHPSA2 TT162N16KOFHPSA2 Infineon Technologies Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.6KV 260A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.6 kV
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TT162N12KOFHPSA1 TT162N12KOFHPSA1 Infineon Technologies TT162N.pdf Description: SCR MODULE 1.2KV 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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TT162N08KOFKHPSA1 TT162N08KOFKHPSA1 Infineon Technologies TT162N.pdf Description: SCR MODULE VDRM 800V 260A MODULE
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TT162N08KOFHPSA1 TT162N08KOFHPSA1 Infineon Technologies TT162N.pdf Description: SCR MODULE VDRM 800V 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 800 V
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TT162N12KOFKHPSA1 TT162N12KOFKHPSA1 Infineon Technologies TT162N.pdf Description: SCR MODULE 1.2KV 260A MODULE
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TT250N14KOFHPSA1 TT250N14KOFHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1.4KV MODULE
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SIPC69SN60C3X2SA1 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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CY14B102NS-BA45XCT CY14B102NS-BA45XCT Infineon Technologies 5047 Description: IC NVSRAM 2MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1990 Stücke:
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IDL08G65C5XUMA2 IDL08G65C5XUMA2 Infineon Technologies Infineon-IDL08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304f77a235be9 Description: DIODE SIL CARBIDE 650V 8A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
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IDL08G65C5XUMA2 IDL08G65C5XUMA2 Infineon Technologies Infineon-IDL08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304f77a235be9 Description: DIODE SIL CARBIDE 650V 8A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
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TLE75602ESDXUMA1 TLE75602ESDXUMA1 Infineon Technologies Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLE75602ESDXUMA1 TLE75602ESDXUMA1 Infineon Technologies Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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250+2.23 EUR
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1000+2.09 EUR
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IPP21N03L G IPP21N03L G Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TO220-3
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F4150R17N3P4B58BPSA1 F4150R17N3P4B58BPSA1 Infineon Technologies Infineon-F4-150R17N3P4_B58-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e8ba3ca7d76e6 Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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TLS4120ADJBOARDLTOBO1 TLS4120ADJBOARDLTOBO1 Infineon Technologies Description: EVAL BOARD TLS4120 ADJ LO FREQ
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TLS41255VBOARDHTOBO1 TLS41255VBOARDHTOBO1 Infineon Technologies Description: EVAL BOARD TLS4125 5V HI FREQ
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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TLS41255VBOARDLTOBO1 TLS41255VBOARDLTOBO1 Infineon Technologies Description: EVAL BOARD TLS4125 5V LO FREQ
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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TLS4120ADJBOARDHTOBO1 TLS4120ADJBOARDHTOBO1 Infineon Technologies Description: EVAL BOARD TLS4120 ADJ HI FREQ
Produkt ist nicht verfügbar
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2EDB8259YXUMA1 2EDB8259YXUMA1 Infineon Technologies Infineon-2EDB8259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef7a231144 Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
Produkt ist nicht verfügbar
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2EDB8259YXUMA1 2EDB8259YXUMA1 Infineon Technologies Infineon-2EDB8259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef7a231144 Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
10+1.93 EUR
25+1.75 EUR
100+1.56 EUR
250+1.47 EUR
500+1.41 EUR
1000+1.37 EUR
Mindestbestellmenge: 7
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TLE49662GHTSA1 TLE49662GHTSA1 Infineon Technologies Infineon-TLE4966-2G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b511123480c28 Description: MAG SWITCH SPEC PURP TSOP6-6-9
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: Either
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Part Status: Active
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
18+0.98 EUR
19+0.93 EUR
25+0.87 EUR
50+0.83 EUR
100+0.79 EUR
500+0.71 EUR
1000+0.68 EUR
Mindestbestellmenge: 16
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TLE4955CE41184XAMA1 TLE4955CE41184XAMA1 Infineon Technologies Infineon-TLE4955C+E41184-DataSheet-v01_10-EN.pdf?fileId=5546d4626cb27db2016d5e59d0850619 Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Supply (Max): 16mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Part Status: Active
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.71 EUR
5+6.49 EUR
10+6.03 EUR
25+5.47 EUR
50+5.09 EUR
100+4.73 EUR
500+3.99 EUR
Mindestbestellmenge: 3
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CYW20702A1KWFBGT Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20702A1KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20732E CYW20732E_Web.pdf
CYW20732E
Hersteller: Infineon Technologies
Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.90 EUR
Mindestbestellmenge: 3
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CYW20732E CYW20732E_Web.pdf
CYW20732E
Hersteller: Infineon Technologies
Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP0400N
IPP0400N
Hersteller: Infineon Technologies
Description: IPP0400N
Packaging: Bulk
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
544+0.92 EUR
Mindestbestellmenge: 544
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T2180N14TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N14TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 4460A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 Infineon-FP30R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43328f05a7f
FP30R06KE3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 37 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+212.52 EUR
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IPT014N08NM5ATMA1 Infineon-IPT014N08NM5-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177b7718ecc5c69
IPT014N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Produkt ist nicht verfügbar
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IPT014N08NM5ATMA1 Infineon-IPT014N08NM5-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177b7718ecc5c69
IPT014N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
auf Bestellung 2194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.35 EUR
10+7.66 EUR
100+5.57 EUR
500+4.79 EUR
Mindestbestellmenge: 2
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IPT010N08NM5ATMA1 Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e
IPT010N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
Produkt ist nicht verfügbar
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IPT010N08NM5ATMA1 Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e
IPT010N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.83 EUR
10+9.07 EUR
100+6.67 EUR
500+6.28 EUR
Mindestbestellmenge: 2
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IPT063N15N5ATMA1 Infineon-IPT063N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb2293bc6ca2
IPT063N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
Produkt ist nicht verfügbar
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IPT063N15N5ATMA1 Infineon-IPT063N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb2293bc6ca2
IPT063N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.15 EUR
10+5.43 EUR
100+3.88 EUR
Mindestbestellmenge: 3
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IPT026N10N5ATMA1 Infineon-IPT026N10N5-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016ac029615332f7
IPT026N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.48 EUR
Mindestbestellmenge: 2000
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IPT026N10N5ATMA1 Infineon-IPT026N10N5-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016ac029615332f7
IPT026N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 5612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+4.71 EUR
100+3.33 EUR
500+2.73 EUR
1000+2.54 EUR
Mindestbestellmenge: 3
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FZ3600R12HP4PHPSA1
FZ3600R12HP4PHPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 4930A AGIHMB190-2
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2324.43 EUR
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IPI65R110CFD INFNS16577-1.pdf?t.download=true&u=5oefqw
IPI65R110CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
119+4.47 EUR
Mindestbestellmenge: 119
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FP25R12W2T4PB11BPSA1 Infineon-FP25R12W2T4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625bd71aa0015bfc4875967263
FP25R12W2T4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+99.51 EUR
Mindestbestellmenge: 6
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IPDQ60R040S7XTMA1 Infineon-IPDQ60R040S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06c46227157c
IPDQ60R040S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+7.17 EUR
Mindestbestellmenge: 750
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IPDQ60R040S7XTMA1 Infineon-IPDQ60R040S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06c46227157c
IPDQ60R040S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.06 EUR
10+9.30 EUR
25+8.61 EUR
100+7.86 EUR
250+7.50 EUR
Mindestbestellmenge: 2
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IPDQ60R065S7XTMA1 Infineon-IPDQ60R065S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06d6b13a15c6
IPDQ60R065S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60R065S7XTMA1 Infineon-IPDQ60R065S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06d6b13a15c6
IPDQ60R065S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.66 EUR
10+6.61 EUR
25+6.09 EUR
100+5.53 EUR
250+5.26 EUR
Mindestbestellmenge: 3
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BSM25GP120B2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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TLE4263GM Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GM
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE4263
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.3 mA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Produkt ist nicht verfügbar
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IPB100P03P3L-04 INFNS11433-1.pdf?t.download=true&u=5oefqw
IPB100P03P3L-04
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 475µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V
Produkt ist nicht verfügbar
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IPB60R120C7ATMA1 Infineon-IPB60R120C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac3d3b5ea3
IPB60R120C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 40659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
148+3.44 EUR
Mindestbestellmenge: 148
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SH100G3016A1
Hersteller: Infineon Technologies
Description: SH100G3 - GATE ARRAY
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+195.08 EUR
Mindestbestellmenge: 3
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PEF22822FV1.2
Hersteller: Infineon Technologies
Description: IC DIGITAL CHIP 10 BASES
Packaging: Bulk
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+22.02 EUR
Mindestbestellmenge: 23
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IPP80R900P7XKSA1 Infineon-IPP80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b431a6d634099
IPP80R900P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 7547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
474+1.06 EUR
Mindestbestellmenge: 474
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FS3L40R07W2H5FB11BOMA1 Infineon-FS3L40R07W2H5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c850552697db5
FS3L40R07W2H5FB11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 18 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+164.45 EUR
Mindestbestellmenge: 3
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BTS3125TFDEMOBOARDTOBO1 Infineon-Demoboard_Description_BTS3XXXTF-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40e2420320
BTS3125TFDEMOBOARDTOBO1
Hersteller: Infineon Technologies
Description: BTS3125TF DEMOBOARD
Packaging: Box
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+65.65 EUR
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IAUA250N04S6N008AUMA1 Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b
IAUA250N04S6N008AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUA250N04S6N008AUMA1 Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b
IAUA250N04S6N008AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 100A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7088 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.20 EUR
100+2.33 EUR
500+1.96 EUR
1000+1.81 EUR
Mindestbestellmenge: 4
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TLE6281G tle6281g_ds_rev2.3.pdf?t.download=true&u=5oefqw
TLE6281G
Hersteller: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 850mA
Interface: PWM, Step/Direction
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 7.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 10V
Supplier Device Package: PG-DSO-20
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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PXM1310CDMG023XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXM1310CDMG023XTMA1
Hersteller: Infineon Technologies
Description: PXM1310CDM - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40
auf Bestellung 27935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+6.59 EUR
Mindestbestellmenge: 72
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FS100R12W3T7B11BPSA1 Infineon-FS100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b19326390c
FS100R12W3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-711
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+174.26 EUR
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BGS14WMA9E6327XTSA1 Infineon-BGS14WMA9-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b89d2bb34472a
BGS14WMA9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP9-50
Packaging: Tape & Reel (TR)
Package / Case: 9-UFLGA
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.15dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 25dB
Supplier Device Package: PG-ATSLP-9-50
IIP3: 65dBm
Part Status: Active
Produkt ist nicht verfügbar
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BGS14WMA9E6327XTSA1 Infineon-BGS14WMA9-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b89d2bb34472a
BGS14WMA9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP9-50
Packaging: Cut Tape (CT)
Package / Case: 9-UFLGA
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.15dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 25dB
Supplier Device Package: PG-ATSLP-9-50
IIP3: 65dBm
Part Status: Active
Produkt ist nicht verfügbar
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IRFS7540TRLPBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFS7540TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.22 EUR
100+2.19 EUR
Mindestbestellmenge: 5
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TT162N16KOFHPSA2 Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.6 kV
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+243.13 EUR
16+216.69 EUR
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TT162N12KOFHPSA1 TT162N.pdf
TT162N12KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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TT162N08KOFKHPSA1 TT162N.pdf
TT162N08KOFKHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 800V 260A MODULE
Produkt ist nicht verfügbar
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TT162N08KOFHPSA1 TT162N.pdf
TT162N08KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 800V 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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TT162N12KOFKHPSA1 TT162N.pdf
TT162N12KOFKHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 260A MODULE
Produkt ist nicht verfügbar
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TT250N14KOFHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TT250N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV MODULE
Produkt ist nicht verfügbar
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SIPC69SN60C3X2SA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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CY14B102NS-BA45XCT 5047
CY14B102NS-BA45XCT
Hersteller: Infineon Technologies
Description: IC NVSRAM 2MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.23 EUR
Mindestbestellmenge: 2
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IDL08G65C5XUMA2 Infineon-IDL08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304f77a235be9
IDL08G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 8A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Produkt ist nicht verfügbar
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IDL08G65C5XUMA2 Infineon-IDL08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304f77a235be9
IDL08G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 8A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
10+6.85 EUR
Mindestbestellmenge: 3
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TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
TLE75602ESDXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.01 EUR
6000+1.97 EUR
Mindestbestellmenge: 3000
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TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
TLE75602ESDXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 10529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.89 EUR
25+2.64 EUR
100+2.37 EUR
250+2.23 EUR
500+2.15 EUR
1000+2.09 EUR
Mindestbestellmenge: 5
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IPP21N03L G fundamentals-of-power-semiconductors
IPP21N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TO220-3
Produkt ist nicht verfügbar
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F4150R17N3P4B58BPSA1 Infineon-F4-150R17N3P4_B58-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e8ba3ca7d76e6
F4150R17N3P4B58BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+223.33 EUR
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TLS4120ADJBOARDLTOBO1
TLS4120ADJBOARDLTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD TLS4120 ADJ LO FREQ
Produkt ist nicht verfügbar
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TLS41255VBOARDHTOBO1
TLS41255VBOARDHTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD TLS4125 5V HI FREQ
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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TLS41255VBOARDLTOBO1
TLS41255VBOARDLTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD TLS4125 5V LO FREQ
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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TLS4120ADJBOARDHTOBO1
TLS4120ADJBOARDHTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD TLS4120 ADJ HI FREQ
Produkt ist nicht verfügbar
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2EDB8259YXUMA1 Infineon-2EDB8259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef7a231144
2EDB8259YXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
Produkt ist nicht verfügbar
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2EDB8259YXUMA1 Infineon-2EDB8259Y-DataSheet-v01_04-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef7a231144
2EDB8259YXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+1.93 EUR
25+1.75 EUR
100+1.56 EUR
250+1.47 EUR
500+1.41 EUR
1000+1.37 EUR
Mindestbestellmenge: 7
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TLE49662GHTSA1 Infineon-TLE4966-2G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b511123480c28
TLE49662GHTSA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP TSOP6-6-9
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: Either
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Part Status: Active
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.98 EUR
19+0.93 EUR
25+0.87 EUR
50+0.83 EUR
100+0.79 EUR
500+0.71 EUR
1000+0.68 EUR
Mindestbestellmenge: 16
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TLE4955CE41184XAMA1 Infineon-TLE4955C+E41184-DataSheet-v01_10-EN.pdf?fileId=5546d4626cb27db2016d5e59d0850619
TLE4955CE41184XAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Supply (Max): 16mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Part Status: Active
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
5+6.49 EUR
10+6.03 EUR
25+5.47 EUR
50+5.09 EUR
100+4.73 EUR
500+3.99 EUR
Mindestbestellmenge: 3
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