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BSC0503NSIATMA1 BSC0503NSIATMA1 Infineon Technologies Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73 Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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11+1.76 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.78 EUR
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BSC883N03MSG BSC883N03MSG Infineon Technologies INFNS16416-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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BSC883N03LSG BSC883N03LSG Infineon Technologies INFNS16415-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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TLE94104EPXUMA1 TLE94104EPXUMA1 Infineon Technologies Infineon-TLE94104EP-DS-v01_00-EN.pdf?fileId=5546d4626176435901618f12747668cf Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
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250+1.83 EUR
500+1.76 EUR
1000+1.7 EUR
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SAB-C501G-1EM Infineon Technologies SIEMS040-1.pdf?t.download=true&u=5oefqw Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
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CYW170-01SXC CYW170-01SXC Infineon Technologies Description: IC CLK ZDB 133MHZ 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Input: Clock
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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BFP420H6740XTSA1 BFP420H6740XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP420H6740XTSA1 BFP420H6740XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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IRGS4615DTRRPBF IRGS4615DTRRPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Current - Collector (Ic) (Max): 23 A
Gate Charge: 19 nC
Test Condition: 400V, 8A, 47Ohm, 15V
Switching Energy: 70µJ (on), 145µJ (off)
Td (on/off) @ 25°C: 30ns/95ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 99 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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IPW90R120C3FKSA1 IPW90R120C3FKSA1 Infineon Technologies IPW90R120C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043183a955501185000e1d254f2 Description: MOSFET N-CH 900V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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DEMOBGT60TR13CTOBO1 DEMOBGT60TR13CTOBO1 Infineon Technologies Infineon-BGT60TR13C_Shield-ApplicationNotes-v02_02-EN.pdf?fileId=8ac78c8c7d0d8da4017d3318e31c2ad6 Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Supplied Contents: Board(s)
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10+338.77 EUR
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BSL716SNH6327XTSA1 BSL716SNH6327XTSA1 Infineon Technologies BSL716SN.pdf Description: MOSFET N-CH 75V 2.5A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSL373SNH6327XTSA1 BSL373SNH6327XTSA1 Infineon Technologies BSL373SN.pdf Description: MOSFET N-CH 100V 2A TSOP-6
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BSL806NH6327XTSA1 BSL806NH6327XTSA1 Infineon Technologies Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1 Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Produkt ist nicht verfügbar
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BSZ011NE2LS5IATMA1 BSZ011NE2LS5IATMA1 Infineon Technologies Infineon-BSZ011NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6f66852a4 Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
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100+2.01 EUR
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ISK024NE2LM5AULA1 ISK024NE2LM5AULA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V PG-VSON-6
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Supplier Device Package: 6-PQFN Dual (2x2)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
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3000+0.47 EUR
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ISK024NE2LM5AULA1 ISK024NE2LM5AULA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V PG-VSON-6
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Supplier Device Package: 6-PQFN Dual (2x2)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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500+0.59 EUR
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DDB6U144N16RBPSA1 DDB6U144N16RBPSA1 Infineon Technologies Infineon-DDB6U144N16R-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431590a5413 Description: LOW POWER ECONO AG-ECONO2A-8111
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Average Rectified (Io): 100 A
Voltage - Peak Reverse (Max): 1.6 kV
Part Status: Active
Supplier Device Package: AG-ECONO2A
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BSC037N08NS5TATMA1 BSC037N08NS5TATMA1 Infineon Technologies Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23 Description: MOSFET N-CH 80V 22A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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BAT165E6874HTMA1 BAT165E6874HTMA1 Infineon Technologies bat165series.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313d846880113df01f69804d6 Description: DIODE SCHOTT 40V 750MA PGSOD3232
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 750mA
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD24VL1B-02LRHE6327 ESD24VL1B-02LRHE6327 Infineon Technologies INFN-S-A0000037316-1.pdf?t.download=true&u=5oefqw Description: MULTI-PURPOSE ESD DEVICE
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Voltage - Breakdown (Min): 24.3V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 2.5pF @ 1MHz
Applications: USB
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Part Status: Active
Power Line Protection: No
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ESD24VL1B02LRHE6327XTSA1 ESD24VL1B02LRHE6327XTSA1 Infineon Technologies INFN-S-A0000037316-1.pdf?t.download=true&u=5oefqw Description: MULTI-PURPOSE ESD DEVICE
Voltage - Breakdown (Min): 24.3V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 2.5pF @ 1MHz
Applications: USB
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
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BAS4002S-02LRHE6327 BAS4002S-02LRHE6327 Infineon Technologies INFNS15529-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 200MA PGTSLP217
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-TSLP-2-17
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
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ESD3V3U1U02LRHE6327XTSA1 ESD3V3U1U02LRHE6327XTSA1 Infineon Technologies INFNS15393-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Produkt ist nicht verfügbar
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ESD300B102LRHE6327XTSA1 ESD300B102LRHE6327XTSA1 Infineon Technologies ESD300-B1-02LRH.pdf Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 260W
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Capacitance @ Frequency: 1.2pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
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ESD300B102LRHE6327XTSA1 ESD300B102LRHE6327XTSA1 Infineon Technologies ESD300-B1-02LRH.pdf Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Capacitance @ Frequency: 1.2pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 260W
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
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BAS3005S02LRHE6327XTSA1 BAS3005S02LRHE6327XTSA1 Infineon Technologies bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0 Description: DIODE SCHOTT 30V 500MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
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SAKXC2733X20F66LAAKXUMA1 SAKXC2733X20F66LAAKXUMA1 Infineon Technologies INFNS16642-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Produkt ist nicht verfügbar
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SAKXC2734X40F80LAAKXUMA1 SAKXC2734X40F80LAAKXUMA1 Infineon Technologies INFNS28091-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAFXE162FN40F80LAAFXQSA1 Infineon Technologies INFNS17110-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-XC2734X40F80LAAKXUMA1 SAK-XC2734X40F80LAAKXUMA1 Infineon Technologies INFNS28091-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAKXC2733X20F66LRAAKXUMA1 SAKXC2733X20F66LRAAKXUMA1 Infineon Technologies INFNS16642-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAF-XE162FN40F80LAAFXQSA1 Infineon Technologies INFNS17110-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Produkt ist nicht verfügbar
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REFILD8150DC15ASMDTOBO1 REFILD8150DC15ASMDTOBO1 Infineon Technologies Infineon-Reference_design_REF_ILD8150_DC_1.5A_high_frequency_operation-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f768f820ae Description: EVAL BOARD FOR ILD8150
Packaging: Bulk
Features: Dimmable
Voltage - Input: 8V ~ 80V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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IRF6722STR1PBF IRF6722STR1PBF Infineon Technologies IRF6722S(TR)PBF.pdf Description: MOSFET N-CH 30V 13A DIRECTFET
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IRF6712STR1PBF IRF6712STR1PBF Infineon Technologies irf6712spbf.pdf?fileId=5546d462533600a4015355ecf4331a7c Description: MOSFET N-CH 25V 17A DIRECTFET
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IRF6729MTRPBF IRF6729MTRPBF Infineon Technologies IRF6729M%28TR%29PBF.pdf Description: MOSFET N-CH 30V 31A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Cut Tape (CT)
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IRF6714MTR1PBF IRF6714MTR1PBF Infineon Technologies irf6714mpbf.pdf?fileId=5546d462533600a4015355ed04be1a80 Description: MOSFET N-CH 25V 29A DIRECTFET
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IRF6715MTR1PBF IRF6715MTR1PBF Infineon Technologies irf6715mpbf.pdf?fileId=5546d462533600a4015355ed0d221a82 Description: MOSFET N-CH 25V 34A DIRECTFET
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IRF6720S2TR1PBF IRF6720S2TR1PBF Infineon Technologies IRF6720S2TR(1)PBF.pdf Description: MOSFET N-CH 30V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BB644E7904 Infineon Technologies Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
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PSB2186PV1.1 PSB2186PV1.1 Infineon Technologies SIEMS00944-1.pdf?t.download=true&u=5oefqw Description: ISAC-S TE ISDN ACCESS CONTROLLER
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-DIP-40-2
Current - Supply: 17mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: 4-Wire, IOM-2
Function: ISDN
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB120N08S403ATMA1 IPB120N08S403ATMA1 Infineon Technologies IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512 Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB120N08S403ATMA1 IPB120N08S403ATMA1 Infineon Technologies IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512 Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
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BGSX22G6U10E6327XTSA1 BGSX22G6U10E6327XTSA1 Infineon Technologies Infineon-BGSX22G6U10-DataSheet-v02_01-EN.pdf?fileId=5546d4627a0b0c7b017a2d9e9ec16100 Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSX22G6U10E6327XTSA1 BGSX22G6U10E6327XTSA1 Infineon Technologies Infineon-BGSX22G6U10-DataSheet-v02_01-EN.pdf?fileId=5546d4627a0b0c7b017a2d9e9ec16100 Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Cut Tape (CT)
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20+0.92 EUR
23+0.78 EUR
25+0.74 EUR
100+0.68 EUR
250+0.64 EUR
500+0.61 EUR
1000+0.59 EUR
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 Infineon Technologies Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
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1000+2.39 EUR
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 Infineon Technologies Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
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100+3.13 EUR
500+2.69 EUR
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XMC1301T038F0032ABXUMA1 XMC1301T038F0032ABXUMA1 Infineon Technologies infineon-xmc1300-ab-datasheet-en.pdf Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 1947 Stücke:
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5+3.57 EUR
10+2.66 EUR
25+2.43 EUR
100+2.17 EUR
250+2.05 EUR
500+1.98 EUR
1000+1.92 EUR
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IPB50R299CPATMA1 IPB50R299CPATMA1 Infineon Technologies IPB50R299CP.pdf Description: MOSFET N-CH 550V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB50R250CPATMA1 IPB50R250CPATMA1 Infineon Technologies IPB50R250CP.pdf Description: MOSFET N-CH 550V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IMZA65R039M1HXKSA1 IMZA65R039M1HXKSA1 Infineon Technologies Infineon-IMZA65R039M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c5f3b3c68 Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 91 Stücke:
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30+15.55 EUR
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FD600R06ME3_B11_S2 Infineon Technologies FD600R06ME3_B11_S2.pdf Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 Infineon Technologies Infineon-FF300R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b981ab7e0010 Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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T720N16TOFXPSA1 T720N16TOFXPSA1 Infineon Technologies Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
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T720N14TOFXPSA1 T720N14TOFXPSA1 Infineon Technologies Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee Description: SCR MODULE 1.8KV 1500A DO-200AB
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94-2518PBF Infineon Technologies Description: IC MOSFET
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F3L200R07PE4 Infineon Technologies INFNS28259-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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SPP04N50C3XKSA1 SPP04N50C3XKSA1 Infineon Technologies Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4 Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BF 775 E6327 BF 775 E6327 Infineon Technologies BF775.pdf Description: RF TRANS NPN 15V 5GHZ SOT23-3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 45mA
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Produkt ist nicht verfügbar
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BSC0503NSIATMA1 Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73
BSC0503NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 9378 Stücke:
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7+2.76 EUR
11+1.76 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.78 EUR
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BSC883N03MSG INFNS16416-1.pdf?t.download=true&u=5oefqw
BSC883N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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799+0.63 EUR
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BSC883N03LSG INFNS16415-1.pdf?t.download=true&u=5oefqw
BSC883N03LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 14999 Stücke:
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TLE94104EPXUMA1 Infineon-TLE94104EP-DS-v01_00-EN.pdf?fileId=5546d4626176435901618f12747668cf
TLE94104EPXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 2980 Stücke:
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6+3.24 EUR
10+2.39 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.7 EUR
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SAB-C501G-1EM SIEMS040-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
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AnzahlPreis
61+7.47 EUR
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CYW170-01SXC
CYW170-01SXC
Hersteller: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Input: Clock
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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BFP420H6740XTSA1 BFP420_Rev2013.pdf
BFP420H6740XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP420H6740XTSA1 BFP420_Rev2013.pdf
BFP420H6740XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.88 EUR
29+0.62 EUR
32+0.56 EUR
100+0.48 EUR
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IRGS4615DTRRPBF IRGx4615DPbF.pdf
IRGS4615DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Current - Collector (Ic) (Max): 23 A
Gate Charge: 19 nC
Test Condition: 400V, 8A, 47Ohm, 15V
Switching Energy: 70µJ (on), 145µJ (off)
Td (on/off) @ 25°C: 30ns/95ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 99 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IPW90R120C3FKSA1 IPW90R120C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043183a955501185000e1d254f2
IPW90R120C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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DEMOBGT60TR13CTOBO1 Infineon-BGT60TR13C_Shield-ApplicationNotes-v02_02-EN.pdf?fileId=8ac78c8c7d0d8da4017d3318e31c2ad6
DEMOBGT60TR13CTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Supplied Contents: Board(s)
auf Bestellung 42 Stücke:
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AnzahlPreis
1+339.56 EUR
10+338.77 EUR
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BSL716SNH6327XTSA1 BSL716SN.pdf
BSL716SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL373SNH6327XTSA1 BSL373SN.pdf
BSL373SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
Produkt ist nicht verfügbar
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BSL806NH6327XTSA1 Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1
BSL806NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Produkt ist nicht verfügbar
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BSZ011NE2LS5IATMA1 Infineon-BSZ011NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6f66852a4
BSZ011NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 6131 Stücke:
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AnzahlPreis
7+2.68 EUR
10+2.32 EUR
25+2.19 EUR
100+2.01 EUR
250+1.9 EUR
500+1.82 EUR
1000+1.75 EUR
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ISK024NE2LM5AULA1 Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AULA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Supplier Device Package: 6-PQFN Dual (2x2)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.47 EUR
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ISK024NE2LM5AULA1 Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AULA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Supplier Device Package: 6-PQFN Dual (2x2)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.85 EUR
16+1.15 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
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DDB6U144N16RBPSA1 Infineon-DDB6U144N16R-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431590a5413
DDB6U144N16RBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-8111
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Average Rectified (Io): 100 A
Voltage - Peak Reverse (Max): 1.6 kV
Part Status: Active
Supplier Device Package: AG-ECONO2A
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BSC037N08NS5TATMA1 Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23
BSC037N08NS5TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BAT165E6874HTMA1 bat165series.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313d846880113df01f69804d6
BAT165E6874HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA PGSOD3232
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 750mA
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD24VL1B-02LRHE6327 INFN-S-A0000037316-1.pdf?t.download=true&u=5oefqw
ESD24VL1B-02LRHE6327
Hersteller: Infineon Technologies
Description: MULTI-PURPOSE ESD DEVICE
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Voltage - Breakdown (Min): 24.3V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 2.5pF @ 1MHz
Applications: USB
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Part Status: Active
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4501+0.12 EUR
Mindestbestellmenge: 4501 Stücke
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ESD24VL1B02LRHE6327XTSA1 INFN-S-A0000037316-1.pdf?t.download=true&u=5oefqw
ESD24VL1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: MULTI-PURPOSE ESD DEVICE
Voltage - Breakdown (Min): 24.3V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 2.5pF @ 1MHz
Applications: USB
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4157+0.11 EUR
Mindestbestellmenge: 4157 Stücke
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BAS4002S-02LRHE6327 INFNS15529-1.pdf?t.download=true&u=5oefqw
BAS4002S-02LRHE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-TSLP-2-17
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 9920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3406+0.15 EUR
Mindestbestellmenge: 3406 Stücke
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ESD3V3U1U02LRHE6327XTSA1 INFNS15393-1.pdf?t.download=true&u=5oefqw
ESD3V3U1U02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Produkt ist nicht verfügbar
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ESD300B102LRHE6327XTSA1 ESD300-B1-02LRH.pdf
ESD300B102LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 260W
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Capacitance @ Frequency: 1.2pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD300B102LRHE6327XTSA1 ESD300-B1-02LRH.pdf
ESD300B102LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Capacitance @ Frequency: 1.2pF @ 1MHz
Applications: Ethernet
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 260W
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Produkt ist nicht verfügbar
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BAS3005S02LRHE6327XTSA1 bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0
BAS3005S02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
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SAKXC2733X20F66LAAKXUMA1 INFNS16642-1.pdf?t.download=true&u=5oefqw
SAKXC2733X20F66LAAKXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Produkt ist nicht verfügbar
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SAKXC2734X40F80LAAKXUMA1 INFNS28091-1.pdf?t.download=true&u=5oefqw
SAKXC2734X40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAFXE162FN40F80LAAFXQSA1 INFNS17110-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-XC2734X40F80LAAKXUMA1 INFNS28091-1.pdf?t.download=true&u=5oefqw
SAK-XC2734X40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAKXC2733X20F66LRAAKXUMA1 INFNS16642-1.pdf?t.download=true&u=5oefqw
SAKXC2733X20F66LRAAKXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-LQFP-64-24
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 19x8/10/12b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAF-XE162FN40F80LAAFXQSA1 INFNS17110-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 40
Part Status: Active
Supplier Device Package: PG-LQFP-64-22
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 9x8/10b SAR
Core Processor: C166SV2
Produkt ist nicht verfügbar
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REFILD8150DC15ASMDTOBO1 Infineon-Reference_design_REF_ILD8150_DC_1.5A_high_frequency_operation-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d73f768f820ae
REFILD8150DC15ASMDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Packaging: Bulk
Features: Dimmable
Voltage - Input: 8V ~ 80V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+108.12 EUR
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IRF6722STR1PBF IRF6722S(TR)PBF.pdf
IRF6722STR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
Produkt ist nicht verfügbar
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IRF6712STR1PBF irf6712spbf.pdf?fileId=5546d462533600a4015355ecf4331a7c
IRF6712STR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Produkt ist nicht verfügbar
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IRF6729MTRPBF IRF6729M%28TR%29PBF.pdf
IRF6729MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF6714MTR1PBF irf6714mpbf.pdf?fileId=5546d462533600a4015355ed04be1a80
IRF6714MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A DIRECTFET
Produkt ist nicht verfügbar
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IRF6715MTR1PBF irf6715mpbf.pdf?fileId=5546d462533600a4015355ed0d221a82
IRF6715MTR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Produkt ist nicht verfügbar
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IRF6720S2TR1PBF IRF6720S2TR(1)PBF.pdf
IRF6720S2TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DirectFET™ Isometric S1
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric S1
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BB644E7904
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
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PSB2186PV1.1 SIEMS00944-1.pdf?t.download=true&u=5oefqw
PSB2186PV1.1
Hersteller: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Number of Circuits: 1
Part Status: Active
Supplier Device Package: P-DIP-40-2
Current - Supply: 17mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: 4-Wire, IOM-2
Function: ISDN
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB120N08S403ATMA1 IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512
IPB120N08S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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IPB120N08S403ATMA1 IPP_B_I120N08S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a014763906e790512
IPB120N08S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BGSX22G6U10E6327XTSA1 Infineon-BGSX22G6U10-DataSheet-v02_01-EN.pdf?fileId=5546d4627a0b0c7b017a2d9e9ec16100
BGSX22G6U10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSX22G6U10E6327XTSA1 Infineon-BGSX22G6U10-DataSheet-v02_01-EN.pdf?fileId=5546d4627a0b0c7b017a2d9e9ec16100
BGSX22G6U10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SW DPDT 7.125GHZ ULGA10
Supplier Device Package: PG-ULGA-10-1
Isolation: 20dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 0.85dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Circuit: DPDT
Mounting Type: Surface Mount
Package / Case: 10-UFLGA
Packaging: Cut Tape (CT)
auf Bestellung 3426 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.92 EUR
23+0.78 EUR
25+0.74 EUR
100+0.68 EUR
250+0.64 EUR
500+0.61 EUR
1000+0.59 EUR
Mindestbestellmenge: 20 Stücke
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IKB30N65ES5ATMA1 Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d
IKB30N65ES5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+2.39 EUR
Mindestbestellmenge: 1000 Stücke
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IKB30N65ES5ATMA1 Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d
IKB30N65ES5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
auf Bestellung 1269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.72 EUR
10+4.43 EUR
100+3.13 EUR
500+2.69 EUR
Mindestbestellmenge: 3 Stücke
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XMC1301T038F0032ABXUMA1 infineon-xmc1300-ab-datasheet-en.pdf
XMC1301T038F0032ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.57 EUR
10+2.66 EUR
25+2.43 EUR
100+2.17 EUR
250+2.05 EUR
500+1.98 EUR
1000+1.92 EUR
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IPB50R299CPATMA1 IPB50R299CP.pdf
IPB50R299CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB50R250CPATMA1 IPB50R250CP.pdf
IPB50R250CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IMZA65R039M1HXKSA1 Infineon-IMZA65R039M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c5f3b3c68
IMZA65R039M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+19.48 EUR
30+15.55 EUR
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FD600R06ME3_B11_S2 FD600R06ME3_B11_S2.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 Infineon-FF300R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b981ab7e0010
FF300R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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T720N16TOFXPSA1 Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee
T720N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
auf Bestellung 6 Stücke:
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AnzahlPreis
1+267.68 EUR
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T720N14TOFXPSA1 Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee
T720N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Produkt ist nicht verfügbar
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94-2518PBF
Hersteller: Infineon Technologies
Description: IC MOSFET
Produkt ist nicht verfügbar
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F3L200R07PE4 INFNS28259-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3432 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+288.71 EUR
Mindestbestellmenge: 2 Stücke
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SPP04N50C3XKSA1 Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4
SPP04N50C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 560 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BF 775 E6327 BF775.pdf
BF 775 E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 45mA
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Produkt ist nicht verfügbar
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