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CHL8103-04CRT CHL8103-04CRT Infineon Technologies CHL8102_03_04_13_PB_V1.09_8-28-13.pdf Description: IC REG BUCK 40VQFN
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CHL8104-01CRT CHL8104-01CRT Infineon Technologies CHL8102_03_04_13_PB_V1.09_8-28-13.pdf Description: IC REG BUCK 40VQFN
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CHL8104-10CRT CHL8104-10CRT Infineon Technologies CHL8102_03_04_13_PB_V1.09_8-28-13.pdf Description: IC REG BUCK 40VQFN
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CHL8112A-09CRT CHL8112A-09CRT Infineon Technologies CHL8112A_B_Prelim_PB_Rev0.04_8-25-10.pdf Description: IC REG BUCK 40VQFN
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 5
Clock Sync: No
Output Phases: 5
Serial Interfaces: I²C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-40-902
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TDA38840AUMA1 TDA38840AUMA1 Infineon Technologies Infineon-TDA38840-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7d718a49017da1f639371ecb&ack=t Description: IC REG BUCK ADJ 40A IQFN-36
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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CHL8326-19CRT CHL8326-19CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG BUCK 48VQFN
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SSIS62F220S02PRXPSA1 Infineon Technologies Description: SCR MODULE
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S29GL256P10TFI010 S29GL256P10TFI010 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 256MBIT PARALLEL 56TSOP
Memory Organization: 32M x 8
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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KP253HP KP253HP Infineon Technologies INFN-S-A0002512139-1.pdf?t.download=true&u=5oefqw Description: SENSOR 10BIT DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Medical Ventilation
Voltage - Supply: 4.75V ~ 5.25V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.15PSI (±1.03kPa)
Pressure Type: Absolute
Output: 10 b
Mounting Type: Surface Mount
Output Type: SPI
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
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REF5QR1680BG30W1TOBO1 REF5QR1680BG30W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5QR1680BG_30W1-ApplicationNotes-v01_01-EN.pdf?fileId=8ac78c8c821f3890018248ef6af37ffe Description: EVAL BOARD FOR ICE5QR1680BG
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 2.2A, 200mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QR1680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 30W
Contents: Board(s)
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D1230N12TXPSA1 Infineon Technologies Infineon-D1230N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a621e45394 Description: DIODE GEN PURP 1.2KV 1230A
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CY7C1069GN30-10ZSXI CY7C1069GN30-10ZSXI Infineon Technologies Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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DF400R07PE4RB6BOSA1 Infineon Technologies INFNS28138-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 650V 450A AG-ECONO4-1-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FZ2400R17HE4B9NPSA1 Infineon Technologies INFNS28642-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
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FZ2400R12KE3B9NOSA1 Infineon Technologies INFNS28640-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Current - Collector Cutoff (Max): 5 mA
Power - Max: 11500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3200 A
Part Status: Active
Supplier Device Package: AG-IHM190-2-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 170 nF @ 25 V
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SP000089223 SP000089223 Infineon Technologies INFNS19475-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
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S29GL01GT11FHIV10 S29GL01GT11FHIV10 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL01GT11DHIV10 S29GL01GT11DHIV10 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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S29GL256S90TFI023 S29GL256S90TFI023 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
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S29GL01GT11DHIV20 S29GL01GT11DHIV20 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL01GT11DHV010 S29GL01GT11DHV010 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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BFP640H6327 BFP640H6327 Infineon Technologies INFN-S-A0001299346-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
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ESD132B1W0201E6327XTSA1 ESD132B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD132-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb4836a6f2ca2 Description: TVS DIODES
Packaging: Tape & Reel (TR)
Part Status: Active
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ESD132B1W0201E6327XTSA1 ESD132B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD132-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb4836a6f2ca2 Description: TVS DIODES
Packaging: Cut Tape (CT)
Part Status: Active
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121+0.18 EUR
224+0.094 EUR
500+0.088 EUR
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2000+0.08 EUR
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S25FL256SAGMFV011 S25FL256SAGMFV011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
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S25FL256SAGMFV011 S25FL256SAGMFV011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
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S25FL256SAGMFBG00 S25FL256SAGMFBG00 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
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IRG4BC20SPBFXKMA1 IRG4BC20SPBFXKMA1 Infineon Technologies Description: IGBT 600V 19A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 10A, 50Ohm, 15V
Switching Energy: 120µJ (on), 2.05mJ (off)
Td (on/off) @ 25°C: 27ns/540ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IFX25001TSV10AKSA1 IFX25001TSV10AKSA1 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: PG-TO220-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
Current - Supply (Max): 30 mA
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IFX25001TCV10ATMA1 IFX25001TCV10ATMA1 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
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IFX25001TCV85 IFX25001TCV85 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Bulk
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IFX25001TCV10 IFX25001TCV10 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 10V
Supplier Device Package: PG-TO263-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Packaging: Bulk
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IFX25001TCV85ATMA1 IFX25001TCV85ATMA1 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 8.5V 400MA TO263-3-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Bulk
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TLE4274GV85-2 TLE4274GV85-2 Infineon Technologies Infineon-TLE42744-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e563c1f86 Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Packaging: Bulk
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IFX25001TC IFX25001TC Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Bulk
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TLF2931G V50 TLF2931G V50 Infineon Technologies tlf2931_ds_101.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 5V 100MA 8DSO
Voltage Dropout (Max): 0.6V @ 100mA
PSRR: 80dB (120Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 28V
Current - Quiescent (Iq): 1 mA
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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SMBTA56E6433HTMA1 SMBTA56E6433HTMA1 Infineon Technologies smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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SMBTA56E6327HTSA1 SMBTA56E6327HTSA1 Infineon Technologies smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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BGA751N7E6327XTSA1 BGA751N7E6327XTSA1 Infineon Technologies BGA751N7.pdf Description: IC AMP CELLULAR 850MHZ TSNP7-1
Supplier Device Package: TSNP-7-1
Test Frequency: 850MHz
Noise Figure: 1.1dB
Current - Supply: 3.3mA
Gain: 15.3dB
Voltage - Supply: 2.6V ~ 3V
RF Type: Cellular
Frequency: 850MHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
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IAUS300N08S5N014ATMA1 IAUS300N08S5N014ATMA1 Infineon Technologies IAUS300N08S5N014.pdf Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
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IAUS300N08S5N014ATMA1 IAUS300N08S5N014ATMA1 Infineon Technologies IAUS300N08S5N014.pdf Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
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IAUS300N08S5N011ATMA1 IAUS300N08S5N011ATMA1 Infineon Technologies Infineon-IAUS300N08S5N011-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c14610467a Description: MOSFET_(75V 120V( PG-HSOG-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 Infineon Technologies infineon-iaut300n08s5n011-datasheet-en.pdf Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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IPTC011N08NM5ATMA1 IPTC011N08NM5ATMA1 Infineon Technologies Infineon-IPTC011N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e988ff2f7436 Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Produkt ist nicht verfügbar
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IPTC011N08NM5ATMA1 IPTC011N08NM5ATMA1 Infineon Technologies Infineon-IPTC011N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e988ff2f7436 Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
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KITLGPWRBOM003TOBO1 KITLGPWRBOM003TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL BOARD FOR IPT012N08N5
Secondary Attributes: On-Board Test Points
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Part Status: Active
Embedded: No
Primary Attributes: 48V Supply
Supplied Contents: Board(s)
Utilized IC / Part: IPT012N08N5
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IPT012N08NF2SATMA1 IPT012N08NF2SATMA1 Infineon Technologies Infineon-IPT012N08NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183ef4b081b20f7 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Produkt ist nicht verfügbar
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IPT012N08NF2SATMA1 IPT012N08NF2SATMA1 Infineon Technologies Infineon-IPT012N08NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183ef4b081b20f7 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
auf Bestellung 1026 Stücke:
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XMC1402T038X0032AAXUMA1 XMC1402T038X0032AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1402T038X0032AAXUMA1 XMC1402T038X0032AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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10+3.69 EUR
25+3.37 EUR
100+3.02 EUR
250+2.86 EUR
500+2.76 EUR
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IPD50R950CEAUMA1 IPD50R950CEAUMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD50R950CEAUMA1 IPD50R950CEAUMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: CONSUMER
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
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500+0.5 EUR
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IRLR3802TRPBF IRLR3802TRPBF Infineon Technologies irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5 Description: MOSFET N-CH 12V 84A DPAK
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Produkt ist nicht verfügbar
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IPS60R1K0CEAKMA1 Infineon Technologies Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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IPS60R3K4CEAKMA1 IPS60R3K4CEAKMA1 Infineon Technologies Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
FET Type: N-Channel
Produkt ist nicht verfügbar
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IPS60R280PFD7SAKMA1 IPS60R280PFD7SAKMA1 Infineon Technologies Infineon-IPS60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed5dc2db339cc Description: CONSUMER PG-TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRAM136-1061A IRAM136-1061A Infineon Technologies IRAM136-1061A.pdf Description: IGBT IPM 600V 12A 29-PWRSSIP MOD
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGP30N65H5XKSA1 IGP30N65H5XKSA1 Infineon Technologies Infineon-IGP30N65H5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a4dca9be6ccd Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
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1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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2500+1.76 EUR
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1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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1000+1.82 EUR
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CHL8103-04CRT CHL8102_03_04_13_PB_V1.09_8-28-13.pdf
CHL8103-04CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
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CHL8104-01CRT CHL8102_03_04_13_PB_V1.09_8-28-13.pdf
CHL8104-01CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
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CHL8104-10CRT CHL8102_03_04_13_PB_V1.09_8-28-13.pdf
CHL8104-10CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
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CHL8112A-09CRT CHL8112A_B_Prelim_PB_Rev0.04_8-25-10.pdf
CHL8112A-09CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 5
Clock Sync: No
Output Phases: 5
Serial Interfaces: I²C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-40-902
Produkt ist nicht verfügbar
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TDA38840AUMA1 Infineon-TDA38840-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7d718a49017da1f639371ecb&ack=t
TDA38840AUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 40A IQFN-36
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar
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CHL8326-19CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8326-19CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Produkt ist nicht verfügbar
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SSIS62F220S02PRXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE
Produkt ist nicht verfügbar
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S29GL256P10TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P10TFI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Memory Organization: 32M x 8
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
auf Bestellung 851 Stücke:
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2+18.28 EUR
10+16.98 EUR
25+16.46 EUR
91+15.72 EUR
182+15.34 EUR
273+15.11 EUR
546+14.73 EUR
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KP253HP INFN-S-A0002512139-1.pdf?t.download=true&u=5oefqw
KP253HP
Hersteller: Infineon Technologies
Description: SENSOR 10BIT DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Medical Ventilation
Voltage - Supply: 4.75V ~ 5.25V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.15PSI (±1.03kPa)
Pressure Type: Absolute
Output: 10 b
Mounting Type: Surface Mount
Output Type: SPI
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
auf Bestellung 3889 Stücke:
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105+5.11 EUR
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REF5QR1680BG30W1TOBO1 Infineon-Reference_board_REF_5QR1680BG_30W1-ApplicationNotes-v01_01-EN.pdf?fileId=8ac78c8c821f3890018248ef6af37ffe
REF5QR1680BG30W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5QR1680BG
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 2.2A, 200mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QR1680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 30W
Contents: Board(s)
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1+254.42 EUR
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D1230N12TXPSA1 Infineon-D1230N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a621e45394
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 1230A
Produkt ist nicht verfügbar
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CY7C1069GN30-10ZSXI Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1069GN30-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DF400R07PE4RB6BOSA1 INFNS28138-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 450A AG-ECONO4-1-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 210 Stücke:
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2+315.66 EUR
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FZ2400R17HE4B9NPSA1 INFNS28642-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
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1+1949.39 EUR
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FZ2400R12KE3B9NOSA1 INFNS28640-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Current - Collector Cutoff (Max): 5 mA
Power - Max: 11500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3200 A
Part Status: Active
Supplier Device Package: AG-IHM190-2-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 170 nF @ 25 V
auf Bestellung 14 Stücke:
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1+2455.74 EUR
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SP000089223 INFNS19475-1.pdf?t.download=true&u=5oefqw
SP000089223
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
auf Bestellung 3000 Stücke:
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1501+0.42 EUR
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S29GL01GT11FHIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11FHIV10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
auf Bestellung 80 Stücke:
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1+27.54 EUR
10+25.55 EUR
25+24.75 EUR
50+24.15 EUR
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S29GL01GT11DHIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11DHIV10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256S90TFI023 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S90TFI023
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 16M x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL01GT11DHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11DHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GT11DHV010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11DHV010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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BFP640H6327 INFN-S-A0001299346-1.pdf?t.download=true&u=5oefqw
BFP640H6327
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
auf Bestellung 2848 Stücke:
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AnzahlPrivatkunde
1866+0.35 EUR
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ESD132B1W0201E6327XTSA1 Infineon-ESD132-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb4836a6f2ca2
ESD132B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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ESD132B1W0201E6327XTSA1 Infineon-ESD132-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb4836a6f2ca2
ESD132B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 6761 Stücke:
Lieferzeit 10-14 Tag (e)
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67+0.31 EUR
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500+0.088 EUR
1000+0.081 EUR
2000+0.08 EUR
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S25FL256SAGMFV011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGMFV011
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
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S25FL256SAGMFV011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGMFV011
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
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S25FL256SAGMFBG00 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGMFBG00
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
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IRG4BC20SPBFXKMA1
IRG4BC20SPBFXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 19A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 10A, 50Ohm, 15V
Switching Energy: 120µJ (on), 2.05mJ (off)
Td (on/off) @ 25°C: 27ns/540ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IFX25001TSV10AKSA1 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TSV10AKSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: PG-TO220-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
Current - Supply (Max): 30 mA
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IFX25001TCV10ATMA1 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TCV10ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
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IFX25001TCV85 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TCV85
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Bulk
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IFX25001TCV10 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TCV10
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 10V
Supplier Device Package: PG-TO263-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Packaging: Bulk
Produkt ist nicht verfügbar
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IFX25001TCV85ATMA1 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TCV85ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Bulk
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TLE4274GV85-2 Infineon-TLE42744-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e563c1f86
TLE4274GV85-2
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Packaging: Bulk
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IFX25001TC INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TC
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
PSRR: 60dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 8.5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Packaging: Bulk
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TLF2931G V50 tlf2931_ds_101.pdf?t.download=true&u=5oefqw
TLF2931G V50
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Voltage Dropout (Max): 0.6V @ 100mA
PSRR: 80dB (120Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 28V
Current - Quiescent (Iq): 1 mA
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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SMBTA56E6433HTMA1 smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c
SMBTA56E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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SMBTA56E6327HTSA1 smbta56_mmbta56.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fad71671d8c
SMBTA56E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BGA751N7E6327XTSA1 BGA751N7.pdf
BGA751N7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Supplier Device Package: TSNP-7-1
Test Frequency: 850MHz
Noise Figure: 1.1dB
Current - Supply: 3.3mA
Gain: 15.3dB
Voltage - Supply: 2.6V ~ 3V
RF Type: Cellular
Frequency: 850MHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
auf Bestellung 13991 Stücke:
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742+0.8 EUR
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IAUS300N08S5N014ATMA1 IAUS300N08S5N014.pdf
IAUS300N08S5N014ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUS300N08S5N014ATMA1 IAUS300N08S5N014.pdf
IAUS300N08S5N014ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 185 Stücke:
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IAUS300N08S5N011ATMA1 Infineon-IAUS300N08S5N011-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c14610467a
IAUS300N08S5N011ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOG-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUT300N08S5N011ATMA1 infineon-iaut300n08s5n011-datasheet-en.pdf
IAUT300N08S5N011ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
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2000+4.39 EUR
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IPTC011N08NM5ATMA1 Infineon-IPTC011N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e988ff2f7436
IPTC011N08NM5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Produkt ist nicht verfügbar
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IPTC011N08NM5ATMA1 Infineon-IPTC011N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e988ff2f7436
IPTC011N08NM5ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
auf Bestellung 135 Stücke:
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2+13.47 EUR
10+9.03 EUR
100+6.51 EUR
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KITLGPWRBOM003TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM003TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IPT012N08N5
Secondary Attributes: On-Board Test Points
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Part Status: Active
Embedded: No
Primary Attributes: 48V Supply
Supplied Contents: Board(s)
Utilized IC / Part: IPT012N08N5
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+106.04 EUR
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IPT012N08NF2SATMA1 Infineon-IPT012N08NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183ef4b081b20f7
IPT012N08NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Produkt ist nicht verfügbar
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IPT012N08NF2SATMA1 Infineon-IPT012N08NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183ef4b081b20f7
IPT012N08NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
auf Bestellung 1026 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.86 EUR
10+7.25 EUR
100+5.2 EUR
500+4.71 EUR
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XMC1402T038X0032AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0032AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1402T038X0032AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0032AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
10+3.69 EUR
25+3.37 EUR
100+3.02 EUR
250+2.86 EUR
500+2.76 EUR
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IPD50R950CEAUMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPD50R950CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD50R950CEAUMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPD50R950CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
auf Bestellung 1214 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
22+0.95 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
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IRLR3802TRPBF irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5
IRLR3802TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 12V 84A DPAK
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Produkt ist nicht verfügbar
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IPS60R1K0CEAKMA1 Infineon-IPS60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c943d7224
Hersteller: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1039+0.56 EUR
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IPS60R3K4CEAKMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
IPS60R3K4CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPS60R280PFD7SAKMA1 Infineon-IPS60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed5dc2db339cc
IPS60R280PFD7SAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IRAM136-1061A IRAM136-1061A.pdf
IRAM136-1061A
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 12A 29-PWRSSIP MOD
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGP30N65H5XKSA1 Infineon-IGP30N65H5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a4dca9be6ccd
IGP30N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.12 EUR
50+2.53 EUR
100+2.28 EUR
500+1.84 EUR
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1ED3127MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3127MU12FXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.76 EUR
5000+1.73 EUR
Mindestbestellmenge: 2500 Stücke
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1ED3127MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3127MU12FXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 5299 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.07 EUR
250+1.95 EUR
500+1.88 EUR
1000+1.82 EUR
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