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CY8C4126AZQ-S423 CY8C4126AZQ-S423 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69 Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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58+15.35 EUR
Mindestbestellmenge: 58
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IR3565AMCP01TRP IR3565AMCP01TRP Infineon Technologies IR3565A_PB_v3.04_10-1-13.pdf Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 4
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 XMC1201Q040F0200ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 XMC1201Q040F0200ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSM35GD120DN2E3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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BSM35GD120DLCE3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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F1235R12KT4GBOSA1 F1235R12KT4GBOSA1 Infineon Technologies F12-35R12KT4G_Rev2_2013-11-04.pdf Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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TLS41205VCOREBOARDTOBO1 TLS41205VCOREBOARDTOBO1 Infineon Technologies Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f Description: TLS4120 5V CORE-BOARD
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FP100R12N2T7B11BPSA1 FP100R12N2T7B11BPSA1 Infineon Technologies Infineon-FP100R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c80027ecd0180a8df007a1d22 Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS100R12N2T7B15BPSA1 FS100R12N2T7B15BPSA1 Infineon Technologies Infineon-FS100R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083afca973005 Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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1+141.49 EUR
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TLE4966V1GHTSA1 TLE4966V1GHTSA1 Infineon Technologies Infineon-TLE4966V-1G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b512464fc0e06 Description: MAGNETIC SWITCH LATCH TSOP6-6-9
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Polarization: Either
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.5V ~ 32V
Technology: Hall Effect
Sensing Range: -4.1mT Trip, 4.1mT Release
Current - Output (Max): 10mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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12+1.58 EUR
13+1.39 EUR
14+1.32 EUR
25+1.23 EUR
50+1.18 EUR
100+1.12 EUR
500+1.02 EUR
1000+0.98 EUR
Mindestbestellmenge: 12
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TLE4955CXAMA1 TLE4955CXAMA1 Infineon Technologies Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56 Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Supply (Max): 16mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Part Status: Active
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5+3.56 EUR
6+3.16 EUR
10+3.01 EUR
25+2.84 EUR
50+2.72 EUR
100+2.61 EUR
500+2.39 EUR
Mindestbestellmenge: 5
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TLE4955CXAMA1 TLE4955CXAMA1 Infineon Technologies Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56 Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Supply (Max): 16mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Part Status: Active
Produkt ist nicht verfügbar
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FP50R06KE3BPSA1 FP50R06KE3BPSA1 Infineon Technologies Infineon-FP50R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4332c9b5a83 Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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DD241S12KHPSA1 Infineon Technologies DD241S.pdf Description: DIODE MOD GP 1200V 261A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 261A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
Current - Reverse Leakage @ Vr: 200 mA @ 1200 V
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3+250.71 EUR
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TC397XP256F300SBCLXUMA1 TC397XP256F300SBCLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TC399XX256F300SBCLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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TC399XP256F300SBCKXUMA1 TC399XP256F300SBCKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 100x12b
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XP256F300SBCLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS03MR12A6MA1LBBPSA1 FS03MR12A6MA1LBBPSA1 Infineon Technologies Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011 Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
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1+3358.36 EUR
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FS03MR12A6MA1LB Infineon Technologies Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011 Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Produkt ist nicht verfügbar
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IRF5810 IRF5810 Infineon Technologies irf5810.pdf Description: MOSFET 2P-CH 20V 2.9A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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FP75R12N2T7PB11BPSA1 FP75R12N2T7PB11BPSA1 Infineon Technologies Infineon-FP75R12N2T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a44b232e23 Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 1 Stücke:
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1+203.49 EUR
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FS75R12N2T7B15BPSA2 FS75R12N2T7B15BPSA2 Infineon Technologies Infineon-FS75R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4c9cf2e2f Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
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1+125.05 EUR
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FS50R12KE3BPSA1 FS50R12KE3BPSA1 Infineon Technologies Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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BSC130P03LSGAUMA1 BSC130P03LSGAUMA1 Infineon Technologies BSC130P03LSG.pdf Description: MOSFET P-CH 30V 12A/22.5A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V
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FS150R12N2T7B54BPSA1 FS150R12N2T7B54BPSA1 Infineon Technologies Infineon-FS150R12N2T7_B54-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083b68852300b Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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FS150R12N2T7B15BPSA1 FS150R12N2T7B15BPSA1 Infineon Technologies Infineon-FS150R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083b667283008 Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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MA5332MXUMA1 Infineon Technologies Description: AUDIO IC PG-IQFN-42
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BSM30GP60BOSA1 Infineon Technologies Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 300 nA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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BSM30GP60B2BOSA1 Infineon Technologies Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
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XDPL8218XUMA1 XDPL8218XUMA1 Infineon Technologies Infineon-XDPL8218-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301670d686dc33676 Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 66MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-51
Dimming: PWM
Voltage - Supply (Max): 24V
Part Status: Obsolete
auf Bestellung 539 Stücke:
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9+2.04 EUR
12+1.49 EUR
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250+1.12 EUR
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TLE4988CXTNM28HAMA1 TLE4988CXTNM28HAMA1 Infineon Technologies Infineon-TLE4988C_CamshaftSensor_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462712ef9b7017154c3311563f9 Description: SPEED & CURRENT SENSORS PG-SSO-3
Packaging: Tape & Reel (TR)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 195°C (TJ)
Voltage - Supply: 4V ~ 24V
Technology: Hall Effect
Sensing Range: -31.1mT ~ 134.6mT
Current - Output (Max): 15mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-3-52
Part Status: Active
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TLE4988CXTNM28HAMA1 TLE4988CXTNM28HAMA1 Infineon Technologies Infineon-TLE4988C_CamshaftSensor_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462712ef9b7017154c3311563f9 Description: SPEED & CURRENT SENSORS PG-SSO-3
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 195°C (TJ)
Voltage - Supply: 4V ~ 24V
Technology: Hall Effect
Sensing Range: -31.1mT ~ 134.6mT
Current - Output (Max): 15mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-3-52
Part Status: Active
auf Bestellung 1484 Stücke:
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6+3.47 EUR
10+3.31 EUR
25+3.12 EUR
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CY90F428GAPF-GSE1 CY90F428GAPF-GSE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 100QFP
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CY90F428GCPMC-GE1 CY90F428GCPMC-GE1 Infineon Technologies Description: IC MCU 16BIT 128KB FLASH 100LQFP
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IR3567AMGB08TRP IR3567AMGB08TRP Infineon Technologies IR3567A_PB_v3.04_10-1-13.pdf Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
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FS150R12N3T7BPSA1 FS150R12N3T7BPSA1 Infineon Technologies Infineon-FS150R12N3T7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083b6a995300e Description: LOW POWER ECONO AG-ECONO3B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 2 Stücke:
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1+178.09 EUR
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FS150R12W3T7B11BPSA1 FS150R12W3T7B11BPSA1 Infineon Technologies Infineon-FS150R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b35289393d Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1.2 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 1 Stücke:
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IMC101TT038XUMA1 IMC101TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
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IMC101TT038XUMA1 IMC101TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.46 EUR
10+4.93 EUR
100+3.49 EUR
500+2.87 EUR
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BAS70-07E6327 BAS70-07E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT143-4
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BAS70-07WE6327 BAS70-07WE6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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TLE5309EVALKITTOBO1 TLE5309EVALKITTOBO1 Infineon Technologies Infineon-TLE5x09A16(D)-Eval_Kit-UserManual-v01_00-EN.pdf?fileId=5546d46274b9648d0174baccfbbe52b4 Description: TLE5309 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Utilized IC / Part: TLE5309, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
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IPD70N12S311ATMA1 IPD70N12S311ATMA1 Infineon Technologies Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6 Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+1.38 EUR
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IPD70N12S311ATMA1 IPD70N12S311ATMA1 Infineon Technologies Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6 Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
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5+3.85 EUR
10+2.78 EUR
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500+1.72 EUR
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IPD50N08S413ATMA1 IPD50N08S413ATMA1 Infineon Technologies PdfFile_624492.pdf Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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2500+0.73 EUR
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IPD50N08S413ATMA1 IPD50N08S413ATMA1 Infineon Technologies PdfFile_624492.pdf Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4114 Stücke:
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IPD50N04S4-08 IPD50N04S4-08 Infineon Technologies INFNS15018-1.pdf?t.download=true&u=5oefqw Description: IPD50N04 - 20V-40V N-CHANNEL AUT
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IPD50N12S3L15ATMA1 IPD50N12S3L15ATMA1 Infineon Technologies Infineon-IPD50N12S3L-15-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf088407fe3 Description: MOSFET N-CHANNEL_100+
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IPA50R399CP IPA50R399CP Infineon Technologies INFNS15800-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPAN60R210PFD7SXKSA1 IPAN60R210PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e Description: MOSFET N-CH 650V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 781 Stücke:
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5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
500+1.49 EUR
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IPAN60R280PFD7SXKSA1 IPAN60R280PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926 Description: CONSUMER PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
auf Bestellung 2779 Stücke:
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6+2.99 EUR
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500+1.17 EUR
1000+1.04 EUR
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Mindestbestellmenge: 6
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ESD230B1W0201E6327XTSA1 ESD230B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934 Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
3+215.49 EUR
Mindestbestellmenge: 3
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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IPW90R800C3 IPW90R800C3 Infineon Technologies INFNS14343-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPA90R800C3 IPA90R800C3 Infineon Technologies INFNS12359-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 900V 6.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPS60R800CEAKMA1 IPS60R800CEAKMA1 Infineon Technologies Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
899+0.52 EUR
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IPW90R800C3FKSA1 IPW90R800C3FKSA1 Infineon Technologies IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095 Description: MOSFET N-CH 900V 6.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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CY8C4126AZQ-S423 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69
CY8C4126AZQ-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
58+15.35 EUR
Mindestbestellmenge: 58
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IR3565AMCP01TRP IR3565A_PB_v3.04_10-1-13.pdf
IR3565AMCP01TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 4
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t
XMC1201Q040F0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 Infineon-xmc1200_AB-DS-v01_06-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0&ack=t
XMC1201Q040F0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSM35GD120DN2E3224BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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BSM35GD120DLCE3224BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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F1235R12KT4GBOSA1 F12-35R12KT4G_Rev2_2013-11-04.pdf
F1235R12KT4GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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TLS41205VCOREBOARDTOBO1 Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f
TLS41205VCOREBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4120 5V CORE-BOARD
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.07 EUR
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FP100R12N2T7B11BPSA1 Infineon-FP100R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c80027ecd0180a8df007a1d22
FP100R12N2T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+302.83 EUR
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FS100R12N2T7B15BPSA1 Infineon-FS100R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083afca973005
FS100R12N2T7B15BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+141.49 EUR
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TLE4966V1GHTSA1 Infineon-TLE4966V-1G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b512464fc0e06
TLE4966V1GHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TSOP6-6-9
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Polarization: Either
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.5V ~ 32V
Technology: Hall Effect
Sensing Range: -4.1mT Trip, 4.1mT Release
Current - Output (Max): 10mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
13+1.39 EUR
14+1.32 EUR
25+1.23 EUR
50+1.18 EUR
100+1.12 EUR
500+1.02 EUR
1000+0.98 EUR
Mindestbestellmenge: 12
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TLE4955CXAMA1 Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56
TLE4955CXAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Supply (Max): 16mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Part Status: Active
auf Bestellung 1493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
6+3.16 EUR
10+3.01 EUR
25+2.84 EUR
50+2.72 EUR
100+2.61 EUR
500+2.39 EUR
Mindestbestellmenge: 5
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TLE4955CXAMA1 Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56
TLE4955CXAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Supply (Max): 16mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Part Status: Active
Produkt ist nicht verfügbar
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FP50R06KE3BPSA1 Infineon-FP50R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4332c9b5a83
FP50R06KE3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+212.52 EUR
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DD241S12KHPSA1 DD241S.pdf
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 261A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 261A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
Current - Reverse Leakage @ Vr: 200 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+250.71 EUR
Mindestbestellmenge: 3
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TC397XP256F300SBCLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC397XP256F300SBCLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XX256F300SBCLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XP256F300SBCKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC399XP256F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 100x12b
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XP256F300SBCLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS03MR12A6MA1LBBPSA1 Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011
FS03MR12A6MA1LBBPSA1
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3358.36 EUR
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FS03MR12A6MA1LB Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Produkt ist nicht verfügbar
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IRF5810 irf5810.pdf
IRF5810
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.9A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
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FP75R12N2T7PB11BPSA1 Infineon-FP75R12N2T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a44b232e23
FP75R12N2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+203.49 EUR
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FS75R12N2T7B15BPSA2 Infineon-FS75R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4c9cf2e2f
FS75R12N2T7B15BPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+125.05 EUR
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FS50R12KE3BPSA1 Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c
FS50R12KE3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+129.18 EUR
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BSC130P03LSGAUMA1 BSC130P03LSG.pdf
BSC130P03LSGAUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12A/22.5A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V
Produkt ist nicht verfügbar
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FS150R12N2T7B54BPSA1 Infineon-FS150R12N2T7_B54-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083b68852300b
FS150R12N2T7B54BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+163.64 EUR
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FS150R12N2T7B15BPSA1 Infineon-FS150R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083b667283008
FS150R12N2T7B15BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Produkt ist nicht verfügbar
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MA5332MXUMA1
Hersteller: Infineon Technologies
Description: AUDIO IC PG-IQFN-42
Produkt ist nicht verfügbar
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BSM30GP60BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 300 nA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Produkt ist nicht verfügbar
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BSM30GP60B2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Produkt ist nicht verfügbar
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XDPL8218XUMA1 Infineon-XDPL8218-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301670d686dc33676
XDPL8218XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 66MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-51
Dimming: PWM
Voltage - Supply (Max): 24V
Part Status: Obsolete
auf Bestellung 539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
12+1.49 EUR
25+1.35 EUR
100+1.19 EUR
250+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 9
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TLE4988CXTNM28HAMA1 Infineon-TLE4988C_CamshaftSensor_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462712ef9b7017154c3311563f9
TLE4988CXTNM28HAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-3
Packaging: Tape & Reel (TR)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 195°C (TJ)
Voltage - Supply: 4V ~ 24V
Technology: Hall Effect
Sensing Range: -31.1mT ~ 134.6mT
Current - Output (Max): 15mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Produkt ist nicht verfügbar
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TLE4988CXTNM28HAMA1 Infineon-TLE4988C_CamshaftSensor_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462712ef9b7017154c3311563f9
TLE4988CXTNM28HAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-3
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 195°C (TJ)
Voltage - Supply: 4V ~ 24V
Technology: Hall Effect
Sensing Range: -31.1mT ~ 134.6mT
Current - Output (Max): 15mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-3-52
Part Status: Active
auf Bestellung 1484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
6+3.47 EUR
10+3.31 EUR
25+3.12 EUR
50+2.99 EUR
100+2.87 EUR
500+2.63 EUR
Mindestbestellmenge: 5
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CY90F428GAPF-GSE1
CY90F428GAPF-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Produkt ist nicht verfügbar
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CY90F428GCPMC-GE1
CY90F428GCPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Produkt ist nicht verfügbar
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IR3567AMGB08TRP IR3567A_PB_v3.04_10-1-13.pdf
IR3567AMGB08TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Produkt ist nicht verfügbar
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FS150R12N3T7BPSA1 Infineon-FS150R12N3T7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083b6a995300e
FS150R12N3T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+178.09 EUR
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FS150R12W3T7B11BPSA1 Infineon-FS150R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b35289393d
FS150R12W3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1.2 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+133.58 EUR
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IMC101TT038XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TT038XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
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IMC101TT038XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TT038XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.46 EUR
10+4.93 EUR
100+3.49 EUR
500+2.87 EUR
1000+2.67 EUR
Mindestbestellmenge: 3
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BAS70-07E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-07E6327
Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT143-4
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-07WE6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-07WE6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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TLE5309EVALKITTOBO1 Infineon-TLE5x09A16(D)-Eval_Kit-UserManual-v01_00-EN.pdf?fileId=5546d46274b9648d0174baccfbbe52b4
TLE5309EVALKITTOBO1
Hersteller: Infineon Technologies
Description: TLE5309 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Utilized IC / Part: TLE5309, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+92.54 EUR
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IPD70N12S311ATMA1 Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6
IPD70N12S311ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.38 EUR
Mindestbestellmenge: 2500
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IPD70N12S311ATMA1 Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6
IPD70N12S311ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.78 EUR
100+2.12 EUR
500+1.72 EUR
1000+1.69 EUR
Mindestbestellmenge: 5
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IPD50N08S413ATMA1 PdfFile_624492.pdf
IPD50N08S413ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.73 EUR
Mindestbestellmenge: 2500
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IPD50N08S413ATMA1 PdfFile_624492.pdf
IPD50N08S413ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+1.77 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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IPD50N04S4-08 INFNS15018-1.pdf?t.download=true&u=5oefqw
IPD50N04S4-08
Hersteller: Infineon Technologies
Description: IPD50N04 - 20V-40V N-CHANNEL AUT
Produkt ist nicht verfügbar
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IPD50N12S3L15ATMA1 Infineon-IPD50N12S3L-15-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf088407fe3
IPD50N12S3L15ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Produkt ist nicht verfügbar
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IPA50R399CP INFNS15800-1.pdf?t.download=true&u=5oefqw
IPA50R399CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
388+1.24 EUR
Mindestbestellmenge: 388
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IPAN60R210PFD7SXKSA1 Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e
IPAN60R210PFD7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
500+1.49 EUR
Mindestbestellmenge: 5
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IPAN60R280PFD7SXKSA1 Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926
IPAN60R280PFD7SXKSA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
auf Bestellung 2779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
50+1.59 EUR
100+1.47 EUR
500+1.17 EUR
1000+1.04 EUR
2000+1.01 EUR
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ESD230B1W0201E6327XTSA1 Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934
ESD230B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
DF400R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+215.49 EUR
Mindestbestellmenge: 3
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DF400R12KE3HOSA1 Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
DF400R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
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IPW90R800C3 INFNS14343-1.pdf?t.download=true&u=5oefqw
IPW90R800C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPA90R800C3 INFNS12359-1.pdf?t.download=true&u=5oefqw
IPA90R800C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPS60R800CEAKMA1 Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590
IPS60R800CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
899+0.52 EUR
Mindestbestellmenge: 899
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IPW90R800C3FKSA1 IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095
IPW90R800C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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