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BSF134N10NJ3G Infineon Technologies INFNS28779-1.pdf?t.download=true&u=5oefqw Description: BSF134N10 - 12V-300V N-CHANNEL P
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IST015N06NM5AUMA1 IST015N06NM5AUMA1 Infineon Technologies Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9 Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
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IST015N06NM5AUMA1 IST015N06NM5AUMA1 Infineon Technologies Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9 Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
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IRF9910TRPBF-1 IRF9910TRPBF-1 Infineon Technologies IRF9910TRPbF-1_10-16-14.pdf Description: MOSFET 2N-CH 20V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SLB9660TT12FW443XUMA2 SLB9660TT12FW443XUMA2 Infineon Technologies Description: SLB9660 - OPTIGA EMBEDDED SECURI
DigiKey Programmable: Not Verified
Number of I/O: 1
Part Status: Active
Supplier Device Package: PG-TSSOP-28-2
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: LPC
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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IR3590BMTRPBF Infineon Technologies pb-ir3590b.pdf?fileId=5546d462533600a4015356807f7a2901 Description: IC REG CTLR BUCK I2C 40QFN
Number of Outputs: 6
Clock Sync: No
Output Phases: 6
Serial Interfaces: I2C
Synchronous Rectifier: No
Supplier Device Package: 40-QFN (5x5)
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM Signal
Packaging: Bulk
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IR3590MIB01TRP IR3590MIB01TRP Infineon Technologies IR3590_v2.05_2-4-14.pdf Description: IC REG BUCK 40VQFN
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FS450R17KE3BOSA1 FS450R17KE3BOSA1 Infineon Technologies Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54 Description: IGBT MOD 1700V 605A 2250W
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FS450R17KE3BOSA1 FS450R17KE3BOSA1 Infineon Technologies Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54 Description: IGBT MOD 1700V 605A 2250W
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EB01FS450R17KE3NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
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D1800N44TVFXPSA1 D1800N44TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE GEN PURP 4400V 1800A
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D1800N44TVFXPSA1 D1800N44TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE GEN PURP 4400V 1800A
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D690S20TXPSA1 D690S20TXPSA1 Infineon Technologies Infineon-D690S-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a2b364b4794 Description: DIODE GEN PURP 2KV 690A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Technology: Standard
Current - Average Rectified (Io): 690A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
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TLS850C2TEV33BOARDTOBO1 TLS850C2TEV33BOARDTOBO1 Infineon Technologies Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41 Description: EVAL BOARD FOR TLS850C2TEV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
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AUIRG4BC30SSTRL AUIRG4BC30SSTRL Infineon Technologies auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513 Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IPW50R280CE IPW50R280CE Infineon Technologies INFN-S-A0002263215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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IPW90R1K2C3FKSA1 IPW90R1K2C3FKSA1 Infineon Technologies ipw90r1k2c3_1.0.pdf_folderid=db3a3043156fd5730115c736bcc70ff2&fileid=db3a3043183a955501184ffdc4fc54e2.pdf Description: IPW90R1 - 900V COOLMOS N-CHANNEL
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IMBG65R260M1HXTMA1 IMBG65R260M1HXTMA1 Infineon Technologies Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
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IMBG65R260M1HXTMA1 IMBG65R260M1HXTMA1 Infineon Technologies Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
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10+6.21 EUR
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500+3.87 EUR
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BAT60BE6359HTMA1 BAT60BE6359HTMA1 Infineon Technologies Infineon-BAT60BSERIES-DS-v01_01-en.pdf Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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FS15R06XL4BOMA1 FS15R06XL4BOMA1 Infineon Technologies Description: IGBT MODULE 600V 20A 81W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 675 pF @ 25 V
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2SC0108T2H017HPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
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KP276C1505XTMA1 KP276C1505XTMA1 Infineon Technologies Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182 Description: INTEGRATED PRESSURE SENS
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IPB052N04NGATMA1 IPB052N04NGATMA1 Infineon Technologies IPB052N04N_G.pdf Description: MOSFET N-CH 40V 70A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
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KP276D1505XTMA1 KP276D1505XTMA1 Infineon Technologies Infineon-KP276D1505-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fd7ea482fdd Description: SENSOR 4.35PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 4.35PSI (10kPa ~ 30kPa)
Pressure Type: Absolute
Accuracy: ±1.03%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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BCR35PNH6327XTSA1 BCR35PNH6327XTSA1 Infineon Technologies bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Description: TRANS PREBIAS NPN/PNP 50V SOT363
Current - Collector (Ic) (Max): 100mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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SAK-XE161FU8F40VAAKXUMA1 SAK-XE161FU8F40VAAKXUMA1 Infineon Technologies INFNS17109-1.pdf?t.download=true&u=5oefqw Description: 16 BIT FLASH RISC MICROCONTROLLE
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SAK-XC2723X-20F66VAA SAK-XC2723X-20F66VAA Infineon Technologies INFNS16641-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
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SAK-XE161FL-20F66VAA SAK-XE161FL-20F66VAA Infineon Technologies INFNS17109-1.pdf?t.download=true&u=5oefqw Description: XE161 - 16-BIT FLASH RISC MICROC
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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100+3.47 EUR
250+3.28 EUR
500+3.18 EUR
1000+3.08 EUR
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TLE9879QXW40XUMA2 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9879QXW40XUMA2 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9877QXW40XUMA2 TLE9877QXW40XUMA2 Infineon Technologies PdfFile995992.pdf Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9877QXW40XUMA2 TLE9877QXW40XUMA2 Infineon Technologies PdfFile995992.pdf Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9877QXA40XUMA3 TLE9877QXA40XUMA3 Infineon Technologies PdfFile535425.pdf Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9877QXA40XUMA3 TLE9877QXA40XUMA3 Infineon Technologies PdfFile535425.pdf Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IPI120N06S4H1AKSA2 IPI120N06S4H1AKSA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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IAUA200N04S5N010ATMA1 IAUA200N04S5N010ATMA1 Infineon Technologies Infineon-IAUA200N04S5N010-DS-v01_10-EN.pdf?fileId=5546d462647040d101647051b3671ed1 Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
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BSC200P03LSG BSC200P03LSG Infineon Technologies INFNS16204-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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ISC012N04NM6ATMA1 ISC012N04NM6ATMA1 Infineon Technologies Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
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ISC012N04NM6ATMA1 ISC012N04NM6ATMA1 Infineon Technologies Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
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IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BTS244ZE3043 BTS244ZE3043 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Bulk
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BTS244Z Infineon Technologies INFNS14869-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Part Status: Obsolete
Packaging: Bulk
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BTS244ZAKSA1 Infineon Technologies INFNS14869-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
Produkt ist nicht verfügbar
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CYW4329EKUBGT Infineon Technologies BCM4329_RevF_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLE 182WLBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8DPSK, DQPSK, GFSK
GPIO: 9
Supplier Device Package: 182-WLBGA (6.57x5.62)
Data Rate (Max): 72.2Mbps
Power - Output: 11dBm
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz, 5GHz
Mounting Type: Surface Mount
Sensitivity: -91dBm
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE75602ESHXUMA1 TLE75602ESHXUMA1 Infineon Technologies Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE75602ESHXUMA1 TLE75602ESHXUMA1 Infineon Technologies Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE72722DATMA1 TLE72722DATMA1 Infineon Technologies Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2 Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Qualification: AEC-Q100
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Part Status: Active
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE72722DATMA1 TLE72722DATMA1 Infineon Technologies Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2 Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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100+2.82 EUR
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1000+2.5 EUR
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 Infineon Technologies Infineon-IGB20N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bcaeb2fee Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 Infineon Technologies Infineon-IGB20N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bcaeb2fee Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
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BC 847BT E6327 BC 847BT E6327 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SC75-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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CY7B923-JC CY7B923-JC Infineon Technologies Infineon-CY7B923_CY7B933_HOTLink_Transmitter_Receiver-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbf7e945a7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: TRANSMITTER HOTLINK 28-PLCC
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ICLS6023J ICLS6023J Infineon Technologies INFNS16409-1.pdf?t.download=true&u=5oefqw Description: IC LED DVR OFLN SWITCHER PGDIP86
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 67kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-8-6
Dimming: PWM
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 26V
Part Status: Active
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IPP013N06NF2SAKMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IRF6617TR1PBF IRF6617TR1PBF Infineon Technologies irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17 Description: MOSFET N-CH 30V 14A DIRECTFET
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IKA10N60T IKA10N60T Infineon Technologies INFNS30097-1.pdf?t.download=true&u=5oefqw description Description: IKA10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 160µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 30 W
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BSF134N10NJ3G INFNS28779-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSF134N10 - 12V-300V N-CHANNEL P
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IST015N06NM5AUMA1 Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9
IST015N06NM5AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
Produkt ist nicht verfügbar
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IST015N06NM5AUMA1 Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9
IST015N06NM5AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
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2+12.7 EUR
10+8.53 EUR
100+6.24 EUR
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IRF9910TRPBF-1 IRF9910TRPbF-1_10-16-14.pdf
IRF9910TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SLB9660TT12FW443XUMA2
SLB9660TT12FW443XUMA2
Hersteller: Infineon Technologies
Description: SLB9660 - OPTIGA EMBEDDED SECURI
DigiKey Programmable: Not Verified
Number of I/O: 1
Part Status: Active
Supplier Device Package: PG-TSSOP-28-2
Core Processor: 16-Bit
Applications: Trusted Platform Module (TPM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: LPC
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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IR3590BMTRPBF pb-ir3590b.pdf?fileId=5546d462533600a4015356807f7a2901
Hersteller: Infineon Technologies
Description: IC REG CTLR BUCK I2C 40QFN
Number of Outputs: 6
Clock Sync: No
Output Phases: 6
Serial Interfaces: I2C
Synchronous Rectifier: No
Supplier Device Package: 40-QFN (5x5)
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM Signal
Packaging: Bulk
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77+7.82 EUR
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IR3590MIB01TRP IR3590_v2.05_2-4-14.pdf
IR3590MIB01TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
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FS450R17KE3BOSA1 Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54
FS450R17KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
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1+1994.69 EUR
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FS450R17KE3BOSA1 Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54
FS450R17KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
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EB01FS450R17KE3NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
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D1800N44TVFXPSA1 D1800N.pdf
D1800N44TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4400V 1800A
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1+869.45 EUR
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D1800N44TVFXPSA1 D1800N.pdf
D1800N44TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4400V 1800A
Produkt ist nicht verfügbar
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D690S20TXPSA1 Infineon-D690S-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a2b364b4794
D690S20TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2KV 690A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Technology: Standard
Current - Average Rectified (Io): 690A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
Produkt ist nicht verfügbar
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TLS850C2TEV33BOARDTOBO1 Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41
TLS850C2TEV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS850C2TEV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
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1+110.35 EUR
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AUIRG4BC30SSTRL auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513
AUIRG4BC30SSTRL
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IPW50R280CE INFN-S-A0002263215-1.pdf?t.download=true&u=5oefqw
IPW50R280CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
auf Bestellung 101641 Stücke:
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392+1.52 EUR
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IPW90R1K2C3FKSA1 ipw90r1k2c3_1.0.pdf_folderid=db3a3043156fd5730115c736bcc70ff2&fileid=db3a3043183a955501184ffdc4fc54e2.pdf
IPW90R1K2C3FKSA1
Hersteller: Infineon Technologies
Description: IPW90R1 - 900V COOLMOS N-CHANNEL
Produkt ist nicht verfügbar
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IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
IMBG65R260M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
IMBG65R260M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
auf Bestellung 907 Stücke:
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3+9.38 EUR
10+6.21 EUR
100+4.41 EUR
500+3.87 EUR
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
BAT60BE6359HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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FS15R06XL4BOMA1
FS15R06XL4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 20A 81W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 675 pF @ 25 V
Produkt ist nicht verfügbar
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2SC0108T2H017HPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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KP276C1505XTMA1 Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182
KP276C1505XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
auf Bestellung 1389 Stücke:
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AnzahlPrivatkunde
87+7.57 EUR
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IPB052N04NGATMA1 IPB052N04N_G.pdf
IPB052N04NGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
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KP276D1505XTMA1 Infineon-KP276D1505-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fd7ea482fdd
KP276D1505XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 4.35PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 4.35PSI (10kPa ~ 30kPa)
Pressure Type: Absolute
Accuracy: ±1.03%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BCR35PNH6327XTSA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
BCR35PNH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN/PNP 50V SOT363
Current - Collector (Ic) (Max): 100mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
auf Bestellung 291000 Stücke:
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4116+0.14 EUR
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SAK-XE161FU8F40VAAKXUMA1 INFNS17109-1.pdf?t.download=true&u=5oefqw
SAK-XE161FU8F40VAAKXUMA1
Hersteller: Infineon Technologies
Description: 16 BIT FLASH RISC MICROCONTROLLE
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SAK-XC2723X-20F66VAA INFNS16641-1.pdf?t.download=true&u=5oefqw
SAK-XC2723X-20F66VAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
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SAK-XE161FL-20F66VAA INFNS17109-1.pdf?t.download=true&u=5oefqw
SAK-XE161FL-20F66VAA
Hersteller: Infineon Technologies
Description: XE161 - 16-BIT FLASH RISC MICROC
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XMC1403Q048X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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2500+2.99 EUR
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XMC1403Q048X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 4839 Stücke:
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4+5.63 EUR
10+4.21 EUR
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100+3.47 EUR
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500+3.18 EUR
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TLE9879QXW40XUMA2 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9879QXW40XUMA2 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9877QXW40XUMA2 PdfFile995992.pdf
TLE9877QXW40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
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2500+5.69 EUR
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TLE9877QXW40XUMA2 PdfFile995992.pdf
TLE9877QXW40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9877QXA40XUMA3 PdfFile535425.pdf
TLE9877QXA40XUMA3
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9877QXA40XUMA3 PdfFile535425.pdf
TLE9877QXA40XUMA3
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3741 Stücke:
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3+10.34 EUR
10+7.93 EUR
25+7.32 EUR
100+6.65 EUR
250+6.33 EUR
500+6.14 EUR
1000+5.99 EUR
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IPI120N06S4H1AKSA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPI120N06S4H1AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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IAUA200N04S5N010ATMA1 Infineon-IAUA200N04S5N010-DS-v01_10-EN.pdf?fileId=5546d462647040d101647051b3671ed1
IAUA200N04S5N010ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC200P03LSG INFNS16204-1.pdf?t.download=true&u=5oefqw
BSC200P03LSG
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 13641 Stücke:
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751+0.83 EUR
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ISC012N04NM6ATMA1 Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301
ISC012N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 10000 Stücke:
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5000+1.26 EUR
10000+1.21 EUR
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ISC012N04NM6ATMA1 Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301
ISC012N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 11160 Stücke:
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5+4.58 EUR
10+2.95 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.49 EUR
2000+1.48 EUR
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IPD30N06S223ATMA2 Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t
IPD30N06S223ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD30N06S223ATMA2 Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t
IPD30N06S223ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1971 Stücke:
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7+3.17 EUR
11+2 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
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BTS244ZE3043 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3043
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Bulk
auf Bestellung 4726 Stücke:
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104+5.52 EUR
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BTS244Z INFNS14869-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 3447 Stücke:
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AnzahlPrivatkunde
181+3.47 EUR
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BTS244ZAKSA1 INFNS14869-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
Produkt ist nicht verfügbar
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CYW4329EKUBGT BCM4329_RevF_Sep19%2C2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 182WLBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8DPSK, DQPSK, GFSK
GPIO: 9
Supplier Device Package: 182-WLBGA (6.57x5.62)
Data Rate (Max): 72.2Mbps
Power - Output: 11dBm
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz, 5GHz
Mounting Type: Surface Mount
Sensitivity: -91dBm
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE75602ESHXUMA1 Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe
TLE75602ESHXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2 EUR
6000+1.96 EUR
Mindestbestellmenge: 3000 Stücke
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TLE75602ESHXUMA1 Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe
TLE75602ESHXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6211 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.92 EUR
10+2.9 EUR
25+2.64 EUR
100+2.37 EUR
250+2.23 EUR
500+2.15 EUR
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TLE72722DATMA1 Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2
TLE72722DATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Qualification: AEC-Q100
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Part Status: Active
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE72722DATMA1 Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2
TLE72722DATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.63 EUR
10+3.44 EUR
25+3.14 EUR
100+2.82 EUR
250+2.67 EUR
500+2.57 EUR
1000+2.5 EUR
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IGB20N65S5ATMA1 Infineon-IGB20N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bcaeb2fee
IGB20N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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IGB20N65S5ATMA1 Infineon-IGB20N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec81bcaeb2fee
IGB20N65S5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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BC 847BT E6327 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847BT E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SC75-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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CY7B923-JC Infineon-CY7B923_CY7B933_HOTLink_Transmitter_Receiver-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbf7e945a7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7B923-JC
Hersteller: Infineon Technologies
Description: TRANSMITTER HOTLINK 28-PLCC
auf Bestellung 945 Stücke:
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9+75.67 EUR
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ICLS6023J INFNS16409-1.pdf?t.download=true&u=5oefqw
ICLS6023J
Hersteller: Infineon Technologies
Description: IC LED DVR OFLN SWITCHER PGDIP86
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 67kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-8-6
Dimming: PWM
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 26V
Part Status: Active
auf Bestellung 32000 Stücke:
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IPP013N06NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF6617TR1PBF irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17
IRF6617TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Produkt ist nicht verfügbar
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IKA10N60T description INFNS30097-1.pdf?t.download=true&u=5oefqw
IKA10N60T
Hersteller: Infineon Technologies
Description: IKA10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 160µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 30 W
Produkt ist nicht verfügbar
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