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PSB21483FV1.7 Infineon Technologies Description: INCA-S CODEC WITH ACOUSTIC ECHO
Packaging: Bulk
auf Bestellung 480 Stücke:
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10+50.71 EUR
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PSB21911NV5.2 PSB21911NV5.2 Infineon Technologies Description: IEC-Q TEISDN ECHO CANCELLATION
Packaging: Bulk
auf Bestellung 100 Stücke:
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28+18.31 EUR
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PEB2091NV5.2 PEB2091NV5.2 Infineon Technologies INFNS03523-1.pdf?t.download=true&u=5oefqw Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of Circuits: 1
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PEF2091NV5.2 Infineon Technologies Description: ISDN ECHO CANCELLER, 1-FUNC
Packaging: Bulk
Produkt ist nicht verfügbar
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PEB20902NV2.3GIEC-TA Infineon Technologies Description: ISDN ECHO-CANCELLATION CIRCUIT-T
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PEB2091NV5.3 PEB2091NV5.3 Infineon Technologies INFNS03523-1.pdf?t.download=true&u=5oefqw Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
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IM73A135V01XTSA1 IM73A135V01XTSA1 Infineon Technologies Infineon-IM73A135-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fadec36b84500 Description: MIC MEMS ANALOG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
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IM73A135V01XTSA1 IM73A135V01XTSA1 Infineon Technologies Infineon-IM73A135-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fadec36b84500 Description: MIC MEMS ANALOG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
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10+2.68 EUR
25+2.44 EUR
50+2.27 EUR
100+2.12 EUR
250+2 EUR
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FS75R12KT4BPSA2 Infineon Technologies Infineon-FS75R12KT4-DataSheet-v03_00-EN.pdf?fileId=5546d4626d82c047016d8c09290f43d9 Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12KT4BPSA1 FS75R12KT4BPSA1 Infineon Technologies Description: GBT MODULE 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-6
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12W2T4PBPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12KT4B11BPSA1 FS75R12KT4B11BPSA1 Infineon Technologies Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130 Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12W2T4PB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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IDK10G120C5XTMA1 IDK10G120C5XTMA1 Infineon Technologies Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41 Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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IDK10G120C5XTMA1 IDK10G120C5XTMA1 Infineon Technologies Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41 Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 729 Stücke:
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10+4.89 EUR
100+3.48 EUR
500+3.28 EUR
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TLE4274DV33ATMA2 TLE4274DV33ATMA2 Infineon Technologies TLE4274%203.3V%2C2.5V.pdf Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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TLE4274DV33ATMA2 TLE4274DV33ATMA2 Infineon Technologies TLE4274%203.3V%2C2.5V.pdf Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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10+1.78 EUR
25+1.62 EUR
100+1.43 EUR
250+1.35 EUR
500+1.3 EUR
1000+1.25 EUR
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TC277T64F200SDBLXUMA2 TC277T64F200SDBLXUMA2 Infineon Technologies Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
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TC277T64F200SDBKXUMA2 TC277T64F200SDBKXUMA2 Infineon Technologies Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PTFA212401E V4 PTFA212401E V4 Infineon Technologies ptfa212401e-f_v4ds_r02.pdf Description: FET RF 65V 2.14GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Produkt ist nicht verfügbar
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PTFA212401E V4 R250 PTFA212401E V4 R250 Infineon Technologies ptfa212401e-f_v4ds_r02.pdf Description: RF MOSFET LDMOS 30V H-36260-2
Packaging: Tape & Reel (TR)
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Produkt ist nicht verfügbar
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FF300R17ME4B11BOSA1 FF300R17ME4B11BOSA1 Infineon Technologies Infineon-FF300R17ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fbf7666953a6f Description: IGBT MOD 1700V 375A 1800W
auf Bestellung 12 Stücke:
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2+276.54 EUR
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KITIM72D128V01FLEXTOBO1 KITIM72D128V01FLEXTOBO1 Infineon Technologies Infineon-IM72D128-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c80027ecd0180612a60277e10 Description: EVAL BOARD FOR IM72D128V01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM72D128V01
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Embedded: No
Part Status: Active
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1+110.7 EUR
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ICE5BR3995BZXKLA1 ICE5BR3995BZXKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
auf Bestellung 1930 Stücke:
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5+3.54 EUR
10+2.52 EUR
50+2.12 EUR
100+1.99 EUR
250+1.86 EUR
500+1.78 EUR
1000+1.71 EUR
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ICE5BR4780BZXKLA1 ICE5BR4780BZXKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
auf Bestellung 1916 Stücke:
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50+1.33 EUR
100+1.26 EUR
150+1.23 EUR
250+1.18 EUR
350+1.16 EUR
500+1.14 EUR
1250+1.09 EUR
Mindestbestellmenge: 50
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ICE5BR4780BZXKLA1 ICE5BR4780BZXKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
auf Bestellung 1916 Stücke:
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EVAL5BR4780BZ450MA1TOBO1 EVAL5BR4780BZ450MA1TOBO1 Infineon Technologies Infineon-Engineering_Report_Evaluation_board_EVAL_5BR4780BZ_450mA1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181868714871520 Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
auf Bestellung 1 Stücke:
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EVAL5BR3995BZBUCK1TOBO1 EVAL5BR3995BZBUCK1TOBO1 Infineon Technologies Infineon-Engineering_Report_Evaluation_board_EVAL_5BR3995BZ_BUCK1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189f5fb11157e Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
auf Bestellung 3 Stücke:
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1+181.26 EUR
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REF5BR3995BZ16W1TOBO1 REF5BR3995BZ16W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5BR3995BZ_16W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181808006705ee1 Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
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1+186.52 EUR
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REF5BR3995CZ16W1TOBO1 REF5BR3995CZ16W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5BR3995CZ_16W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181808002035edd Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
auf Bestellung 3 Stücke:
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1+186.52 EUR
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REF5BR4780BZ15W1TOBO1 REF5BR4780BZ15W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5BR4780BZ_15W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181807ffe115ed9 Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
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IGO60R070D1AUMA1 IGO60R070D1AUMA1 Infineon Technologies Infineon-IGO60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IGO60R070D1AUMA1 IGO60R070D1AUMA1 Infineon Technologies Infineon-IGO60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
auf Bestellung 2153 Stücke:
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IGOT60R070D1AUMA1 IGOT60R070D1AUMA1 Infineon Technologies Infineon-IGOT60R070D1-DS-v02_11-EN.pdf?fileId=5546d46265f064ff016685fa65066523 Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGT60R070D1E8220ATMA1 IGT60R070D1E8220ATMA1 Infineon Technologies infineon-igt60r070d1-datasheet-en.pdf Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT60R070D1E8220AUMA1 Infineon Technologies Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IGO60R070D1E8220AUMA1 IGO60R070D1E8220AUMA1 Infineon Technologies Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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FS800R07A2E3BOSA4 Infineon Technologies Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
Produkt ist nicht verfügbar
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FS770R08A6P2LBBPSA1 FS770R08A6P2LBBPSA1 Infineon Technologies Infineon-FS770R08A6P2LB-DataSheet-v03_00-EN.pdf?fileId=5546d4626b2d8e69016b506d3585089c Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Produkt ist nicht verfügbar
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FS05MR12A6MA1BBPSA1 Infineon Technologies Infineon-FS05MR12A6MA1B-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd01804c356f6d0874&da=t Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Produkt ist nicht verfügbar
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FS380R12A6T4LBBPSA1 FS380R12A6T4LBBPSA1 Infineon Technologies Infineon-FS380R12A6T4LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b52dfdf872556 Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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1+1067.92 EUR
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RX98-3 Infineon Technologies Description: RF TRANSMITTER
auf Bestellung 9245 Stücke:
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402+1.21 EUR
Mindestbestellmenge: 402
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DD170N36KHPSA1 DD170N36KHPSA1 Infineon Technologies Infineon-DD170N36K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c81ae03fc0181cddffdc17df0 Description: DIODE MODULE GP 2500V 98A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 170A
Supplier Device Package: BG-PB34AT-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A
Current - Reverse Leakage @ Vr: 25 mA @ 3600 V
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BSM15GP60BOSA1 Infineon Technologies Description: IGBT MODULE 600V 25A 100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
auf Bestellung 275 Stücke:
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4+126.17 EUR
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XC8664FRA5VBEAXUMA1 XC8664FRA5VBEAXUMA1 Infineon Technologies Infineon-SAA_XC866-DS-v01_05-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f442011690d942dc0119&ack=t Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE7241EXUMA1 TLE7241EXUMA1 Infineon Technologies TLE7241E.pdf Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 240mOhm
Voltage - Load: 9V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-DSO-20-27
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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REFWINLIFTTLE9855TOBO1 REFWINLIFTTLE9855TOBO1 Infineon Technologies Description: EVAL BOARD FOR IPZ40N04S5-3R1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
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TLE5046ICPWMR100HALA1 Infineon Technologies Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
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TLE5046ICPWMR100HALA1 Infineon Technologies Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPA60R280P7XKSA1 IPA60R280P7XKSA1 Infineon Technologies infineon-ipa60r280p7-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 3701 Stücke:
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270+1.66 EUR
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IPD65R660CFD IPD65R660CFD Infineon Technologies INFNS28046-1.pdf?t.download=true&u=5oefqw Description: IPD65R660 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IPA65R600E6 Infineon Technologies INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw Description: IPA65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IP165R660CFD IP165R660CFD Infineon Technologies INFNS28046-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPL65R650C6SE8211ATMA1 Infineon Technologies DS_IPL65R650C6S_2_0.pdf?fileId=5546d4614755559a01475d375b530145 Description: IPL65R650 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 Infineon Technologies Infineon-IPD65R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433efacd9a013f0a0c175b3080 Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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311+1.46 EUR
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T571N65TS16XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO BG-T7626K0
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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FZ1000R33HE3BOSA1 Infineon Technologies Infineon-FZ1000R33HE3-DataSheet-v03_04-EN.pdf?fileId=db3a30431ce5fb52011d760f30227290 Description: IGBT MODULE 3300V 1000A 1600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Produkt ist nicht verfügbar
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T1960N22TOFVTXPSA1 T1960N22TOFVTXPSA1 Infineon Technologies Infineon-T1960N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712b08bb3c403f Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
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DD171N16KHPSA2 DD171N16KHPSA2 Infineon Technologies Infineon-DD171N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE MODULE GEN PURP 1600V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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1+243.92 EUR
16+216.25 EUR
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IDB30E120ATMA1 IDB30E120ATMA1 Infineon Technologies IDB30E120_rev2_2G.pdf?folderId=db3a304412b407950112b43712366746&fileId=db3a304412b407950112b43712b86747 Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+2.07 EUR
100+1.41 EUR
500+1.12 EUR
Mindestbestellmenge: 6
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PSB21483FV1.7
Hersteller: Infineon Technologies
Description: INCA-S CODEC WITH ACOUSTIC ECHO
Packaging: Bulk
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+50.71 EUR
Mindestbestellmenge: 10
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PSB21911NV5.2
PSB21911NV5.2
Hersteller: Infineon Technologies
Description: IEC-Q TEISDN ECHO CANCELLATION
Packaging: Bulk
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+18.31 EUR
Mindestbestellmenge: 28
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PEB2091NV5.2 INFNS03523-1.pdf?t.download=true&u=5oefqw
PEB2091NV5.2
Hersteller: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of Circuits: 1
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+20.85 EUR
Mindestbestellmenge: 25
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PEF2091NV5.2
Hersteller: Infineon Technologies
Description: ISDN ECHO CANCELLER, 1-FUNC
Packaging: Bulk
Produkt ist nicht verfügbar
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PEB20902NV2.3GIEC-TA
Hersteller: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-T
Produkt ist nicht verfügbar
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PEB2091NV5.3 INFNS03523-1.pdf?t.download=true&u=5oefqw
PEB2091NV5.3
Hersteller: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Produkt ist nicht verfügbar
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IM73A135V01XTSA1 Infineon-IM73A135-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fadec36b84500
IM73A135V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS ANALOG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.81 EUR
2000+1.69 EUR
3000+1.63 EUR
Mindestbestellmenge: 1000
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IM73A135V01XTSA1 Infineon-IM73A135-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fadec36b84500
IM73A135V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS ANALOG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
auf Bestellung 13081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.68 EUR
25+2.44 EUR
50+2.27 EUR
100+2.12 EUR
250+2 EUR
Mindestbestellmenge: 6
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FS75R12KT4BPSA2 Infineon-FS75R12KT4-DataSheet-v03_00-EN.pdf?fileId=5546d4626d82c047016d8c09290f43d9
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12KT4BPSA1
FS75R12KT4BPSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-6
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12W2T4PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12KT4B11BPSA1 Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130
FS75R12KT4B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R12W2T4PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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IDK10G120C5XTMA1 Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41
IDK10G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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IDK10G120C5XTMA1 Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41
IDK10G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
10+4.89 EUR
100+3.48 EUR
500+3.28 EUR
Mindestbestellmenge: 3
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TLE4274DV33ATMA2 TLE4274%203.3V%2C2.5V.pdf
TLE4274DV33ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.21 EUR
Mindestbestellmenge: 2500
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TLE4274DV33ATMA2 TLE4274%203.3V%2C2.5V.pdf
TLE4274DV33ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 4013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+1.78 EUR
25+1.62 EUR
100+1.43 EUR
250+1.35 EUR
500+1.3 EUR
1000+1.25 EUR
Mindestbestellmenge: 8
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TC277T64F200SDBLXUMA2
TC277T64F200SDBLXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Produkt ist nicht verfügbar
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TC277T64F200SDBKXUMA2
TC277T64F200SDBKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PTFA212401E V4 ptfa212401e-f_v4ds_r02.pdf
PTFA212401E V4
Hersteller: Infineon Technologies
Description: FET RF 65V 2.14GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Produkt ist nicht verfügbar
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PTFA212401E V4 R250 ptfa212401e-f_v4ds_r02.pdf
PTFA212401E V4 R250
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36260-2
Packaging: Tape & Reel (TR)
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Produkt ist nicht verfügbar
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FF300R17ME4B11BOSA1 Infineon-FF300R17ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fbf7666953a6f
FF300R17ME4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+276.54 EUR
Mindestbestellmenge: 2
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KITIM72D128V01FLEXTOBO1 Infineon-IM72D128-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c80027ecd0180612a60277e10
KITIM72D128V01FLEXTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM72D128V01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM72D128V01
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Embedded: No
Part Status: Active
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+110.7 EUR
10+110.45 EUR
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ICE5BR3995BZXKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR3995BZXKLA1
Hersteller: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.52 EUR
50+2.12 EUR
100+1.99 EUR
250+1.86 EUR
500+1.78 EUR
1000+1.71 EUR
Mindestbestellmenge: 5
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ICE5BR4780BZXKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR4780BZXKLA1
Hersteller: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+1.33 EUR
100+1.26 EUR
150+1.23 EUR
250+1.18 EUR
350+1.16 EUR
500+1.14 EUR
1250+1.09 EUR
Mindestbestellmenge: 50
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ICE5BR4780BZXKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR4780BZXKLA1
Hersteller: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
12+1.57 EUR
25+1.42 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
EVAL5BR4780BZ450MA1TOBO1 Infineon-Engineering_Report_Evaluation_board_EVAL_5BR4780BZ_450mA1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181868714871520
EVAL5BR4780BZ450MA1TOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+178.73 EUR
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EVAL5BR3995BZBUCK1TOBO1 Infineon-Engineering_Report_Evaluation_board_EVAL_5BR3995BZ_BUCK1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189f5fb11157e
EVAL5BR3995BZBUCK1TOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+181.26 EUR
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REF5BR3995BZ16W1TOBO1 Infineon-Reference_board_REF_5BR3995BZ_16W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181808006705ee1
REF5BR3995BZ16W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+186.52 EUR
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REF5BR3995CZ16W1TOBO1 Infineon-Reference_board_REF_5BR3995CZ_16W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181808002035edd
REF5BR3995CZ16W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+186.52 EUR
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REF5BR4780BZ15W1TOBO1 Infineon-Reference_board_REF_5BR4780BZ_15W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290181807ffe115ed9
REF5BR4780BZ15W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+178.25 EUR
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IGO60R070D1AUMA1 Infineon-IGO60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IGO60R070D1AUMA1 Infineon-IGO60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
auf Bestellung 2153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+29.11 EUR
Mindestbestellmenge: 16
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IGOT60R070D1AUMA1 Infineon-IGOT60R070D1-DS-v02_11-EN.pdf?fileId=5546d46265f064ff016685fa65066523
IGOT60R070D1AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+27.51 EUR
Mindestbestellmenge: 18
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IGT60R070D1E8220ATMA1 infineon-igt60r070d1-datasheet-en.pdf
IGT60R070D1E8220ATMA1
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT60R070D1E8220AUMA1
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IGO60R070D1E8220AUMA1
IGO60R070D1E8220AUMA1
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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FS800R07A2E3BOSA4
Hersteller: Infineon Technologies
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
Produkt ist nicht verfügbar
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FS770R08A6P2LBBPSA1 Infineon-FS770R08A6P2LB-DataSheet-v03_00-EN.pdf?fileId=5546d4626b2d8e69016b506d3585089c
FS770R08A6P2LBBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Produkt ist nicht verfügbar
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FS05MR12A6MA1BBPSA1 Infineon-FS05MR12A6MA1B-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd01804c356f6d0874&da=t
Hersteller: Infineon Technologies
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Produkt ist nicht verfügbar
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FS380R12A6T4LBBPSA1 Infineon-FS380R12A6T4LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b52dfdf872556
FS380R12A6T4LBBPSA1
Hersteller: Infineon Technologies
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1067.92 EUR
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RX98-3
Hersteller: Infineon Technologies
Description: RF TRANSMITTER
auf Bestellung 9245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
402+1.21 EUR
Mindestbestellmenge: 402
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DD170N36KHPSA1 Infineon-DD170N36K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c81ae03fc0181cddffdc17df0
DD170N36KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2500V 98A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 170A
Supplier Device Package: BG-PB34AT-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A
Current - Reverse Leakage @ Vr: 25 mA @ 3600 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+365.31 EUR
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BSM15GP60BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 25A 100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+126.17 EUR
Mindestbestellmenge: 4
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XC8664FRA5VBEAXUMA1 Infineon-SAA_XC866-DS-v01_05-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f442011690d942dc0119&ack=t
XC8664FRA5VBEAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE7241EXUMA1 TLE7241E.pdf
TLE7241EXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 240mOhm
Voltage - Load: 9V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-DSO-20-27
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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REFWINLIFTTLE9855TOBO1
REFWINLIFTTLE9855TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IPZ40N04S5-3R1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+497.92 EUR
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TLE5046ICPWMR100HALA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
197+2.69 EUR
Mindestbestellmenge: 197
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TLE5046ICPWMR100HALA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPA60R280P7XKSA1 infineon-ipa60r280p7-datasheet-en.pdf
IPA60R280P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 3701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.66 EUR
Mindestbestellmenge: 270
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IPD65R660CFD INFNS28046-1.pdf?t.download=true&u=5oefqw
IPD65R660CFD
Hersteller: Infineon Technologies
Description: IPD65R660 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
360+1.38 EUR
Mindestbestellmenge: 360
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IPA65R600E6 INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPA65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IP165R660CFD INFNS28046-1.pdf?t.download=true&u=5oefqw
IP165R660CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPL65R650C6SE8211ATMA1 DS_IPL65R650C6S_2_0.pdf?fileId=5546d4614755559a01475d375b530145
Hersteller: Infineon Technologies
Description: IPL65R650 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 Infineon-IPD65R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433efacd9a013f0a0c175b3080
IPD65R600E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
311+1.46 EUR
Mindestbestellmenge: 311
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T571N65TS16XPSA1
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-T7626K0
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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FZ1000R33HE3BOSA1 Infineon-FZ1000R33HE3-DataSheet-v03_04-EN.pdf?fileId=db3a30431ce5fb52011d760f30227290
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A 1600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Produkt ist nicht verfügbar
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T1960N22TOFVTXPSA1 Infineon-T1960N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712b08bb3c403f
T1960N22TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+881.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD171N16KHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
DD171N16KHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GEN PURP 1600V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+243.92 EUR
16+216.25 EUR
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IDB30E120ATMA1 IDB30E120_rev2_2G.pdf?folderId=db3a304412b407950112b43712366746&fileId=db3a304412b407950112b43712b86747
IDB30E120ATMA1
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.07 EUR
100+1.41 EUR
500+1.12 EUR
Mindestbestellmenge: 6
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