Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149712) > Seite 573 nach 2496
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S29GL512S11DHI020 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1320 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S11DHIV23 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S11DHIV23 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Cut Tape (CT) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 5472 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S11DHI010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Cut Tape (CT) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S10TFI023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10TFI023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Cut Tape (CT) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD3196-24LDXST | Infineon Technologies |
Description: CCG3PAPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Interface: I2C, SPI, UART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 24.5V Program Memory Type: FLASH (64kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYPD3196-24LDXST | Infineon Technologies |
Description: CCG3PAPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Interface: I2C, SPI, UART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 24.5V Program Memory Type: FLASH (64kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S11DHIV20 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 4766 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S11DHB010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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S29GL512S10FHSS63 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHA013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHV013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHA010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHAV10 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHB013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHI023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHAV23 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHIV13 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10TFA010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL512S11DHSS20 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10FHSS43 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10FHSS40 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S11DHSS10 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29GL512S10FHSS60 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9BF112NPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Active Number of I/O: 83 DigiKey Programmable: Not Verified |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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DD340N22SHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 2200V 330A BGPB50SBPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 330A Supplier Device Package: BG-PB50SB-1 Operating Temperature - Junction: -40°C ~ 135°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2200 V Current - Reverse Leakage @ Vr: 1 mA @ 2200 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF2804STRL7P | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF2804STRL7P | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 676 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R360P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 9A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R360CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 140µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPA60R360P7SE8228XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
Produkt ist nicht verfügbar |
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| IPC60R360P7X7SA1 | Infineon Technologies |
Description: MOSFET N-CH DIE Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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CY95F694KPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 20KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 45 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| CY95F694KNPMC-G-SNE2 | Infineon Technologies |
Description: IC MCU MM 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Connectivity: I²C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Obsolete Number of I/O: 45 |
Produkt ist nicht verfügbar |
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| CY95F694KPMC-G-SNE2 | Infineon Technologies |
Description: IC MEM MM MCU 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Connectivity: I²C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Obsolete Number of I/O: 45 |
Produkt ist nicht verfügbar |
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| MB95F694KNPMC1-G-SNE2 | Infineon Technologies |
Description: IC ANALOGPackaging: Bulk Package / Case: 52-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Connectivity: I²C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 52-LQFP (10x10) Part Status: Obsolete Number of I/O: 45 |
Produkt ist nicht verfügbar |
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CYPD3172P-24LQXQT | Infineon Technologies |
Description: EZ-PD CCG3PA-NFETPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: PWM RAM Size: 4K x 8 Controller Series: CYPD3x Program Memory Type: FLASH (64kB) Applications: Power Adaptor Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 6 DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD3174-24LQXQT | Infineon Technologies |
Description: IC USB TYPE-C CONTROLLER 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 24.5V Program Memory Type: FLASH (64kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD3176-24LQXQT | Infineon Technologies |
Description: CCG3PAPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 24.5V Current - Supply: 10mA Protocol: USB Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYPD3176-24LQXQT | Infineon Technologies |
Description: CCG3PAPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 24.5V Current - Supply: 10mA Protocol: USB Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD3171-24LQXQT | Infineon Technologies |
Description: IC USB TYPE-C CONTROLLER 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: I2C, SPI, UART Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 24.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified Mounting Type: Surface Mount RAM Size: 8K x 8 Program Memory Type: FLASH (64kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Number of I/O: 12 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD3171-24LQXQT | Infineon Technologies |
Description: IC USB TYPE-C CONTROLLER 24QFNPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: I2C, SPI, UART Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 24.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified Mounting Type: Surface Mount RAM Size: 8K x 8 Program Memory Type: FLASH (64kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Number of I/O: 12 |
auf Bestellung 7985 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD3176-24LQXQ | Infineon Technologies |
Description: CCG3PAPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 24.5V Current - Supply: 10mA Protocol: USB Supplier Device Package: 24-QFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3159 Stücke: Lieferzeit 10-14 Tag (e) |
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S29AL016J70TFA020 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48TSOPPackaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 532 Stücke: Lieferzeit 10-14 Tag (e) |
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S29AL016J70TFN010 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48TSOPPackaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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S29AL016J70FFI022 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29AL016J70TFN023 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48TSOPPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S29AL016J55BFNR10 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48VFBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-VFBGA (8.15x6.15) Part Status: Obsolete Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S27KL0642DPBHB020 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 166 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 36ns Memory Interface: HyperBus Access Time: 36 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S27KL0642DPBHI020 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 166 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 36ns Memory Interface: HyperBus Access Time: 36 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1571 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65EL5XKSA1 | Infineon Technologies |
Description: IGBT 650V 85A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 33ns/308ns Switching Energy: 470µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 55A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/190ns Switching Energy: 280µJ (on), 100µJ (off) Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 62A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 188 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SPP80P06PHXKSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 80A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 5.5mA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1309 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL7472L1TRPbF | Infineon Technologies |
Description: MOSFET N-CH 40V 375A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL7472L1TRPbF | Infineon Technologies |
Description: MOSFET N-CH 40V 375A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V |
auf Bestellung 8376 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW75N65EH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 90A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 28ns/174ns Switching Energy: 2.3mJ (on), 900µJ (off) Test Condition: 400V, 75A, 8Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
auf Bestellung 1460 Stücke: Lieferzeit 10-14 Tag (e) |
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| S29GL512S11DHI020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1320 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.57 EUR |
| 10+ | 11.68 EUR |
| 25+ | 11.32 EUR |
| 50+ | 11.05 EUR |
| 100+ | 10.78 EUR |
| 260+ | 10.66 EUR |
| S29GL512S11DHIV23 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2200+ | 10.66 EUR |
| S29GL512S11DHIV23 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 5472 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.17 EUR |
| 10+ | 15.02 EUR |
| 25+ | 14.56 EUR |
| 50+ | 14.21 EUR |
| 100+ | 13.86 EUR |
| 250+ | 13.41 EUR |
| 500+ | 13.07 EUR |
| 1000+ | 12.74 EUR |
| S29GL512S11DHI010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10TFI013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10TFI013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.17 EUR |
| 10+ | 15.02 EUR |
| 25+ | 14.56 EUR |
| 50+ | 14.21 EUR |
| 100+ | 13.86 EUR |
| 250+ | 13.41 EUR |
| 500+ | 13.07 EUR |
| S29GL512S10TFI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10TFI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.17 EUR |
| 10+ | 15.02 EUR |
| 25+ | 14.56 EUR |
| 50+ | 14.21 EUR |
| 100+ | 13.86 EUR |
| 250+ | 13.41 EUR |
| 500+ | 13.07 EUR |
| CYPD3196-24LDXST |
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Hersteller: Infineon Technologies
Description: CCG3PA
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: CCG3PA
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYPD3196-24LDXST |
![]() |
Hersteller: Infineon Technologies
Description: CCG3PA
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: CCG3PA
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.76 EUR |
| 10+ | 5.14 EUR |
| 25+ | 4.73 EUR |
| 100+ | 4.28 EUR |
| 250+ | 4.07 EUR |
| 500+ | 3.94 EUR |
| S29GL512S11DHIV20 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4766 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.57 EUR |
| 10+ | 11.68 EUR |
| 25+ | 11.32 EUR |
| 40+ | 11.14 EUR |
| 80+ | 10.87 EUR |
| 260+ | 10.66 EUR |
| S29GL512S11DHB010 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10FHSS63 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHA013 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHV013 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHA010 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHAV10 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHB013 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHAV23 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHIV13 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10TFA010 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S11DHSS20 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10FHSS43 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512S10FHSS40 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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| S29GL512S11DHSS10 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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| S29GL512S10FHSS60 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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| CY9BF112NPMC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.88 EUR |
| 10+ | 10.06 EUR |
| 90+ | 8.62 EUR |
| 180+ | 8.36 EUR |
| DD340N22SHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 142.31 EUR |
| AUIRF2804STRL7P |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRF2804STRL7P |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.82 EUR |
| 10+ | 5.89 EUR |
| 100+ | 4.24 EUR |
| IPP60R360P7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 50+ | 1.49 EUR |
| 100+ | 1.33 EUR |
| IPB60R360CFD7ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
Description: MOSFET N-CH 600V 7A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
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| IPA60R360P7SE8228XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
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| CY95F694KPMC-G-UNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 45
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 45
DigiKey Programmable: Not Verified
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| CY95F694KNPMC-G-SNE2 |
Hersteller: Infineon Technologies
Description: IC MCU MM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 45
Description: IC MCU MM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 45
Produkt ist nicht verfügbar
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| CY95F694KPMC-G-SNE2 |
Hersteller: Infineon Technologies
Description: IC MEM MM MCU 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 45
Description: IC MEM MM MCU 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 45
Produkt ist nicht verfügbar
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| MB95F694KNPMC1-G-SNE2 |
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Hersteller: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Part Status: Obsolete
Number of I/O: 45
Description: IC ANALOG
Packaging: Bulk
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Part Status: Obsolete
Number of I/O: 45
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| CYPD3172P-24LQXQT |
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Hersteller: Infineon Technologies
Description: EZ-PD CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Not Verified
Description: EZ-PD CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 6
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.29 EUR |
| CYPD3174-24LQXQT |
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Hersteller: Infineon Technologies
Description: IC USB TYPE-C CONTROLLER 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC USB TYPE-C CONTROLLER 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.56 EUR |
| CYPD3176-24LQXQT |
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Hersteller: Infineon Technologies
Description: CCG3PA
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: CCG3PA
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYPD3176-24LQXQT |
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Hersteller: Infineon Technologies
Description: CCG3PA
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: CCG3PA
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.48 EUR |
| 25+ | 2.26 EUR |
| 100+ | 2.02 EUR |
| 250+ | 1.91 EUR |
| 500+ | 1.84 EUR |
| CYPD3171-24LQXQT |
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Hersteller: Infineon Technologies
Description: IC USB TYPE-C CONTROLLER 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
RAM Size: 8K x 8
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Number of I/O: 12
Description: IC USB TYPE-C CONTROLLER 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
RAM Size: 8K x 8
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Number of I/O: 12
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.52 EUR |
| CYPD3171-24LQXQT |
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Hersteller: Infineon Technologies
Description: IC USB TYPE-C CONTROLLER 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
RAM Size: 8K x 8
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Number of I/O: 12
Description: IC USB TYPE-C CONTROLLER 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, SPI, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
RAM Size: 8K x 8
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Number of I/O: 12
auf Bestellung 7985 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.29 EUR |
| 10+ | 2.43 EUR |
| 25+ | 2.21 EUR |
| 100+ | 1.98 EUR |
| 250+ | 1.86 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.74 EUR |
| CYPD3176-24LQXQ |
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Hersteller: Infineon Technologies
Description: CCG3PA
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: CCG3PA
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 24.5V
Current - Supply: 10mA
Protocol: USB
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3159 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.48 EUR |
| 25+ | 2.26 EUR |
| 100+ | 2.02 EUR |
| 490+ | 1.84 EUR |
| 980+ | 1.79 EUR |
| 1470+ | 1.76 EUR |
| 2940+ | 1.72 EUR |
| S29AL016J70TFA020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 5.04 EUR |
| 25+ | 4.89 EUR |
| 50+ | 4.78 EUR |
| 192+ | 4.56 EUR |
| 384+ | 4.45 EUR |
| S29AL016J70TFN010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.98 EUR |
| 10+ | 4.65 EUR |
| 25+ | 4.51 EUR |
| 50+ | 4.41 EUR |
| S29AL016J70FFI022 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29AL016J70TFN023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29AL016J55BFNR10 |
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Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S27KL0642DPBHB020 |
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Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S27KL0642DPBHI020 |
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Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1571 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.72 EUR |
| 10+ | 5.33 EUR |
| 25+ | 5.17 EUR |
| 50+ | 5.06 EUR |
| 100+ | 4.94 EUR |
| 338+ | 4.73 EUR |
| 676+ | 4.61 EUR |
| 1014+ | 4.54 EUR |
| IKW30N65EL5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
Description: IGBT 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 33ns/308ns
Switching Energy: 470µJ (on), 1.35mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 227 W
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.83 EUR |
| IKW30N65H5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/190ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Description: IGBT TRENCH 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/190ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 5.97 EUR |
| 30+ | 3.27 EUR |
| 120+ | 2.68 EUR |
| 510+ | 2.24 EUR |
| IKW30N65ES5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 62A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
Description: IGBT TRENCH 650V 62A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPP80P06PHXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1309 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.53 EUR |
| 50+ | 3.35 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.33 EUR |
| IRL7472L1TRPbF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 3.1 EUR |
| IRL7472L1TRPbF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
auf Bestellung 8376 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 4.16 EUR |
| 100+ | 3.93 EUR |
| 500+ | 3.8 EUR |
| IKW75N65EH5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.3mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH 650V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.3mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.5 EUR |
| 30+ | 5.4 EUR |
| 120+ | 4.5 EUR |
| 510+ | 3.84 EUR |
| 1020+ | 3.75 EUR |



















