| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS46TR16640ED-15HBLA1 | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Case: TWBGA96 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.5V DC Kind of package: in-tray; tube Access time: 13.5ns Kind of interface: parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS46TR16640ED-15HBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Case: TWBGA96 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 1.5V DC Kind of package: in-tray; tube Access time: 13.5ns Kind of interface: parallel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42SM16400M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 348 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43TR16256B-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.91ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43TR16256B-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: 0...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.75ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43TR16256B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.75ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS29GL064-70TLET | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS29GL064-70TLEU | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS29GL064-70TLEB | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS29GL064-70TLET-TR | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LF51236B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 6.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LF51236B-7.5B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 144 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LF51236B-7.5B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LF51236B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LF51236B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 144 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LPS51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LPS51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS61WV20488BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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| IS61WV204816BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 96 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16160G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16160G-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Case: TFBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Kind of memory: LPDDR; SDRAM Supply voltage: 1.7...1.95V DC Access time: 6ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16160G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16160G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16320C-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Case: TFBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: reel; tape Kind of memory: LPDDR; SDRAM Supply voltage: 1.7...1.95V DC Access time: 6ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16320C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16320C-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16640A-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 5ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16640A-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Mounting: SMD Case: TWBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 16Mx16bitx4 Kind of package: reel; tape Kind of memory: LPDDR; SDRAM Supply voltage: 1.7...1.95V DC Access time: 5ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16800G-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Case: TFBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 128Mb DRAM Kind of interface: parallel Memory organisation: 2Mx16bitx4 Kind of package: reel; tape Kind of memory: LPDDR; SDRAM Supply voltage: 1.7...1.95V DC Access time: 6ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16800G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR16800G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32160C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32160C-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32320B-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 8Mx32bitx4 Clock frequency: 166MHz Case: LFBGA90 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32640A-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Case: WBGA90 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32640A-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Case: WBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32800G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43LR32800G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS62WV12816BLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of interface: parallel Case: TSOP44 II Kind of memory: SRAM Operating temperature: -40...85°C Access time: 45ns Operating voltage: 2.5...3.6V Memory: 2Mb SRAM Memory organisation: 128kx16bit |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61WV12816DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of interface: parallel Case: TSOP44 II Kind of memory: SRAM Operating temperature: -40...85°C Access time: 10ns Operating voltage: 2.4...3.6V Memory: 2Mb SRAM Memory organisation: 128kx16bit |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV2568BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16400J-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32200N-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 166MHz; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 2Mx32bit Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...3.6V |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16400J-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32200L-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32200L-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C5128AS-25QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 5V Access time: 25ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C3216AL-12KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C25616AL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IS65WV1288BLL-55HLA1 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV5128BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61WV5128BLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IS25WP020E-JNLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Operating voltage: 1.65...1.95V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IS62WV2568BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS62WV2568BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 480 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS62WV2568BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IS46TR16640ED-15HBLA1 |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS46TR16640ED-15HBLA2 |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS42SM16400M-75BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 348 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43TR16256B-107MBLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.91ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.91ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43TR16256B-125KBL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43TR16256B-125KBLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS29GL064-70TLET |
|
Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS29GL064-70TLEU |
|
Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS29GL064-70TLEB |
|
Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS29GL064-70TLET-TR |
|
Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-6.5TQLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 6.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 6.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-7.5B3LI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 144 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-7.5B3LI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-7.5TQLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-7.5TQLI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
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| IS61LPS51236B-200B3LI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
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| IS61LPS51236B-200B3LI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
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| IS61LPS51236B-200TQLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Produkt ist nicht verfügbar
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| IS61WV20488BLL-10TLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 42.02 EUR |
| 5+ | 38.41 EUR |
| 25+ | 34.58 EUR |
| 100+ | 32.42 EUR |
| IS61WV204816BLL-10TLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Produkt ist nicht verfügbar
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| IS43LR16160G-6BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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| IS43LR16160G-6BL-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Produkt ist nicht verfügbar
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| IS43LR16160G-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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| IS43LR16160G-6BLI-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| IS43LR16200D-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
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| IS43LR16320C-6BL-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Produkt ist nicht verfügbar
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| IS43LR16320C-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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| IS43LR16320C-6BLI-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IS43LR16640A-5BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 5ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 5ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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| IS43LR16640A-5BL-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 1Gb DRAM
Kind of interface: parallel
Memory organisation: 16Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 5ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IS43LR16800G-6BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IS43LR16800G-6BL-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IS43LR16800G-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IS43LR16800G-6BLI-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IS43LR32160C-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| IS43LR32160C-6BLI-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IS43LR32320B-6BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR32640A-6BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR32640A-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR32800G-6BL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR32800G-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS43LR32800G-6BLI-TR |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS62WV12816BLL-45TLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: TSOP44 II
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 2.5...3.6V
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: TSOP44 II
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 2.5...3.6V
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.77 EUR |
| 32+ | 2.68 EUR |
| 34+ | 2.55 EUR |
| IS61WV12816DBLL-10TLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: TSOP44 II
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 2.4...3.6V
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: TSOP44 II
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 2.4...3.6V
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| IS62WV2568BLL-55HLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.36 EUR |
| 27+ | 3.24 EUR |
| 30+ | 2.88 EUR |
| IS42S16400J-7TL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| IS42S32200N-6BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 166MHz; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 166MHz; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.51 EUR |
| IS42S16400J-5TL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.56 EUR |
| IS42S32200L-7TLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.02 EUR |
| IS42S32200L-6TL |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.74 EUR |
| 14+ | 6.33 EUR |
| 16+ | 5.62 EUR |
| 25+ | 5.11 EUR |
| IS61C5128AS-25QLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.9 EUR |
| 10+ | 11.79 EUR |
| 25+ | 11.48 EUR |
| IS61C3216AL-12KLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| IS61C25616AL-10KLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.02 EUR |
| IS65WV1288BLL-55HLA1 |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.77 EUR |
| 16+ | 5.38 EUR |
| 25+ | 4.52 EUR |
| IS62WV5128BLL-55HLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 10.76 EUR |
| 9+ | 10.16 EUR |
| 10+ | 9.26 EUR |
| 25+ | 8.07 EUR |
| IS61WV5128BLL-10KLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.39 EUR |
| 13+ | 6.97 EUR |
| IS25WP020E-JNLE-TR |
|
Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS62WV2568BLL-55TLI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| IS62WV2568BLL-55BLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 480 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IS62WV2568BLL-55BLI-TR |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH