Suchergebnisse für "7n80" : > 60

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SPA17N80C3 SPA17N80C3
Produktcode: 29151 		Infineon datsdheet-spa17n80c3.pdf description Transistoren > MOSFET N-CH
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 37 Stück:
Lieferzeit 21-28 Tag (e)
SPB17N80C3 SPB17N80C3
Produktcode: 37324 		Infineon spb17n80c3_rev25_ratio-48451.pdf Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 18 Stück:
Lieferzeit 21-28 Tag (e)
167N80 167N80 Hammond Manufacturing 167-1390039.pdf Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+182.56 EUR
10+ 177.36 EUR
25+ 170.39 EUR
50+ 162.61 EUR
100+ 152.89 EUR
FQA7N80 FQA7N80 Fairchild Semiconductor FAIRS24241-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)
211+2.34 EUR
Mindestbestellmenge: 211
FQA7N80C FQA7N80C Fairchild Semiconductor FAIRS24235-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 25453 Stücke:
Lieferzeit 10-14 Tag (e)
275+1.8 EUR
Mindestbestellmenge: 275
FQA7N80C-F109 FQA7N80C-F109 onsemi FQA7N80C_F109-D.PDF Description: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 20890 Stücke:
Lieferzeit 10-14 Tag (e)
179+2.77 EUR
Mindestbestellmenge: 179
FQP7N80 FQP7N80 Fairchild Semiconductor FAIRS27698-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 6.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 13035 Stücke:
Lieferzeit 10-14 Tag (e)
143+3.48 EUR
Mindestbestellmenge: 143
FQPF7N80C FQPF7N80C Fairchild Semiconductor FAIRS46447-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
249+1.99 EUR
Mindestbestellmenge: 249
IXFA7N80P IXFA7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.51 EUR
Mindestbestellmenge: 13
IXFA7N80P IXFA7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.51 EUR
17+ 4.2 EUR
50+ 2.62 EUR
Mindestbestellmenge: 13
IXFA7N80P IXFA7N80P Littelfuse Inc. media?resourcetype=datasheets&itemid=B00D4E8D-827B-4A04-B106-292ED53206EE&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 1207 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.28 EUR
50+ 4.98 EUR
100+ 4.27 EUR
500+ 3.79 EUR
1000+ 3.25 EUR
Mindestbestellmenge: 3
IXFK27N80Q IXFK27N80Q Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80q_datasheet.pdf.pdf Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.98 EUR
25+ 39.77 EUR
100+ 37.28 EUR
IXFP7N80P IXFP7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
18+ 4.18 EUR
20+ 3.75 EUR
21+ 3.56 EUR
Mindestbestellmenge: 16
IXFP7N80P IXFP7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.73 EUR
18+ 4.18 EUR
20+ 3.75 EUR
21+ 3.56 EUR
50+ 3.5 EUR
Mindestbestellmenge: 16
IXFP7N80P IXFP7N80P Littelfuse Inc. media?resourcetype=datasheets&itemid=B00D4E8D-827B-4A04-B106-292ED53206EE&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.41 EUR
50+ 6.66 EUR
100+ 5.71 EUR
500+ 5.08 EUR
Mindestbestellmenge: 3
IXFP7N80P IXFP7N80P IXYS media-3322436.pdf MOSFET 7 Amps 800V 1.44 Rds
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.34 EUR
10+ 8.06 EUR
50+ 6.62 EUR
100+ 5.67 EUR
500+ 4.77 EUR
1000+ 4.35 EUR
IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.14 EUR
10+ 24.87 EUR
30+ 24.17 EUR
Mindestbestellmenge: 3
IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
Lieferzeit 7-14 Tag (e)
3+25.14 EUR
10+ 24.87 EUR
30+ 24.17 EUR
Mindestbestellmenge: 3
IXFX27N80Q IXFX27N80Q Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80q_datasheet.pdf.pdf Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.42 EUR
30+ 36 EUR
MSJB17N80-TP MSJB17N80-TP Micro Commercial Co Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 715 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.15 EUR
10+ 6.01 EUR
100+ 4.86 EUR
Mindestbestellmenge: 3
SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay Siliconix siha17n80ae.pdf Description: MOSFET N-CH 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
10+ 3.65 EUR
Mindestbestellmenge: 4
SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay / Siliconix siha17n80ae.pdf MOSFET 800V N-CHANNEL
auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.5 EUR
10+ 3.03 EUR
100+ 2.41 EUR
250+ 2.29 EUR
500+ 2.18 EUR
1000+ 1.99 EUR
2000+ 1.97 EUR
SIHA17N80AEF-GE3 SIHA17N80AEF-GE3 Vishay Siliconix siha17n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.33 EUR
10+ 2.79 EUR
Mindestbestellmenge: 6
SIHA17N80E-E3 SIHA17N80E-E3 Vishay Siliconix siha17n80e.pdf Description: MOSFET N-CHANNEL 800V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.69 EUR
Mindestbestellmenge: 3
SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay Siliconix siha17n80e.pdf Description: N-CHANNEL 800V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.69 EUR
10+ 6.47 EUR
100+ 5.23 EUR
500+ 4.65 EUR
Mindestbestellmenge: 3
SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay Siliconix siha17n80e.pdf Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.98 EUR
Mindestbestellmenge: 1000
SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay / Siliconix siha17n80e.pdf MOSFET N-CHANNEL 800V
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.05 EUR
10+ 8.22 EUR
25+ 7.43 EUR
100+ 7.18 EUR
500+ 6.9 EUR
1000+ 4.45 EUR
SIHB17N80AE-GE3 SIHB17N80AE-GE3 Vishay / Siliconix sihb17n80ae.pdf MOSFET 800V N-CHANNEL
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.65 EUR
10+ 3.8 EUR
100+ 3.08 EUR
500+ 2.6 EUR
1000+ 2.22 EUR
5000+ 2.02 EUR
10000+ 1.99 EUR
SIHB17N80E-GE3 SIHB17N80E-GE3 Vishay Semiconductors sihb17n80e.pdf MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 7459 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.85 EUR
10+ 6 EUR
25+ 5.81 EUR
100+ 5.05 EUR
250+ 4.93 EUR
500+ 4.63 EUR
1000+ 4.24 EUR
SIHB17N80E-GE3 SIHB17N80E-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.11 EUR
10+ 6.81 EUR
100+ 5.51 EUR
500+ 4.9 EUR
Mindestbestellmenge: 3
SIHB17N80E-T1-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.91 EUR
Mindestbestellmenge: 800
SIHB17N80E-T1-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
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3+8.13 EUR
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SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay Siliconix sihg17n80ae.pdf Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 1956 Stücke:
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4+4.95 EUR
25+ 3.92 EUR
100+ 3.36 EUR
500+ 2.99 EUR
1000+ 2.56 EUR
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SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay / Siliconix sihg17n80ae.pdf MOSFET 800V N-CHANNEL
auf Bestellung 644 Stücke:
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1+4.91 EUR
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25+ 4.12 EUR
100+ 3.34 EUR
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1000+ 2.55 EUR
SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Vishay Siliconix sihg17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 296 Stücke:
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4+5.09 EUR
10+ 4.28 EUR
100+ 3.46 EUR
Mindestbestellmenge: 4
SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Vishay / Siliconix sihg17n80aef.pdf MOSFET N-CHANNEL 800V
auf Bestellung 1435 Stücke:
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1+5.05 EUR
10+ 4.26 EUR
25+ 3.96 EUR
100+ 3.43 EUR
250+ 3.4 EUR
500+ 3.27 EUR
1000+ 3.03 EUR
SIHG17N80E-GE3 SIHG17N80E-GE3 Vishay / Siliconix sihg17n80e.pdf MOSFET 800V Vds 30V Vgs TO-247AC
auf Bestellung 187 Stücke:
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1+8.54 EUR
10+ 7.16 EUR
50+ 6.25 EUR
100+ 5.6 EUR
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500+ 5.1 EUR
1000+ 4.4 EUR
SIHG17N80E-GE3 SIHG17N80E-GE3 Vishay Siliconix sihg17n80e.pdf Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
50+ 4.78 EUR
100+ 4.1 EUR
500+ 4.01 EUR
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SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay Siliconix sihp17n80ae.pdf Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
50+ 3.58 EUR
100+ 2.95 EUR
500+ 2.5 EUR
Mindestbestellmenge: 4
SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay / Siliconix sihp17n80ae.pdf MOSFET 800V N-CHANNEL
auf Bestellung 68 Stücke:
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1+4.44 EUR
10+ 3.68 EUR
100+ 2.92 EUR
250+ 2.9 EUR
500+ 2.46 EUR
1000+ 2.13 EUR
2500+ 2.04 EUR
SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay Siliconix sihp17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 918 Stücke:
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4+4.61 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
Mindestbestellmenge: 4
SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay / Siliconix sihp17n80aef.pdf MOSFET N-CHANNEL 800V
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.58 EUR
10+ 3.82 EUR
100+ 3.03 EUR
250+ 2.9 EUR
500+ 2.53 EUR
1000+ 2.18 EUR
2500+ 2.06 EUR
SIHP17N80E-BE3 SIHP17N80E-BE3 Vishay / Siliconix sihp17n80e.pdf MOSFET 800V N-CH MOSFET
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.62 EUR
10+ 6.42 EUR
25+ 5.54 EUR
100+ 5.03 EUR
250+ 4.8 EUR
500+ 4.61 EUR
1000+ 4.12 EUR
SIHP17N80E-GE3 SIHP17N80E-GE3 Vishay Siliconix sihp17n80e.pdf Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
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3+7.67 EUR
10+ 6.45 EUR
100+ 5.22 EUR
500+ 4.64 EUR
1000+ 3.97 EUR
Mindestbestellmenge: 3
SIHP17N80E-GE3 SIHP17N80E-GE3 Vishay / Siliconix sihp17n80e.pdf MOSFET 800V Vds 30V Vgs TO-220AB
auf Bestellung 2515 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.62 EUR
10+ 6.41 EUR
25+ 6.05 EUR
100+ 5.19 EUR
250+ 4.89 EUR
500+ 4.61 EUR
1000+ 4.44 EUR
SPA17N80C3 SPA17N80C3 Infineon Technologies Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf description MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 4437 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.37 EUR
10+ 6.2 EUR
25+ 5.83 EUR
100+ 5 EUR
250+ 4.93 EUR
500+ 4.17 EUR
1000+ 3.8 EUR
SPA17N80C3XK SPA17N80C3XK Infineon Technologies Infineon-SPA17N80C3-DS-v02_08-EN-1226622.pdf MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.37 EUR
10+ 6.2 EUR
25+ 5.83 EUR
100+ 5 EUR
250+ 4.72 EUR
500+ 4.44 EUR
1000+ 3.8 EUR
SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
50+ 5.88 EUR
100+ 5.04 EUR
Mindestbestellmenge: 3
SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.74 EUR
25+ 4.79 EUR
100+ 4.56 EUR
1000+ 3.59 EUR
SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies 2628902905791340infineon-spp_a17n80c3-ds-v02_07-en.pdffolderiddb3a3043163797a6011.pdf Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1181 Stücke:
Lieferzeit 14-21 Tag (e)
SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES SPB17N80C3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.72 EUR
14+ 5.15 EUR
15+ 4.88 EUR
250+ 4.69 EUR
Mindestbestellmenge: 11
SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES SPB17N80C3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 503 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.72 EUR
14+ 5.15 EUR
15+ 4.88 EUR
250+ 4.69 EUR
Mindestbestellmenge: 11
SPB17N80C3 Infineon Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
5+9.72 EUR
Mindestbestellmenge: 5
SPB17N80C3 SPB17N80C3 Infineon Technologies Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 7727 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.37 EUR
10+ 6.2 EUR
25+ 5.83 EUR
100+ 5 EUR
250+ 4.72 EUR
500+ 4.47 EUR
1000+ 3.8 EUR
SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+ 6.23 EUR
100+ 5.04 EUR
500+ 4.48 EUR
Mindestbestellmenge: 3
SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.84 EUR
Mindestbestellmenge: 1000
SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 9096 Stücke:
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1+7.29 EUR
10+ 6.11 EUR
25+ 5.26 EUR
100+ 4.47 EUR
250+ 4.44 EUR
500+ 3.87 EUR
1000+ 3.57 EUR
SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
50+ 4.69 EUR
Mindestbestellmenge: 12
SPP17N80C3 SPP17N80C3 Infineon Technologies Infineon_SPP17N80C3_DS_v02_91_en-3363668.pdf description MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.15 EUR
10+ 6.2 EUR
25+ 6.02 EUR
100+ 5.65 EUR
250+ 5.02 EUR
500+ 4.24 EUR
1000+ 4.15 EUR
SPA17N80C3
Produktcode: 29151		 description datsdheet-spa17n80c3.pdf
SPA17N80C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 37 Stück:
Lieferzeit 21-28 Tag (e)
SPB17N80C3
Produktcode: 37324		 spb17n80c3_rev25_ratio-48451.pdf
SPB17N80C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 18 Stück:
Lieferzeit 21-28 Tag (e)
167N80 167-1390039.pdf
167N80
Hersteller: Hammond Manufacturing
Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+182.56 EUR
10+ 177.36 EUR
25+ 170.39 EUR
50+ 162.61 EUR
100+ 152.89 EUR
FQA7N80 FAIRS24241-1.pdf?t.download=true&u=5oefqw
FQA7N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
211+2.34 EUR
Mindestbestellmenge: 211
FQA7N80C FAIRS24235-1.pdf?t.download=true&u=5oefqw
FQA7N80C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 25453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
275+1.8 EUR
Mindestbestellmenge: 275
FQA7N80C-F109 FQA7N80C_F109-D.PDF
FQA7N80C-F109
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 20890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
179+2.77 EUR
Mindestbestellmenge: 179
FQP7N80 FAIRS27698-1.pdf?t.download=true&u=5oefqw
FQP7N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 6.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 13035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
143+3.48 EUR
Mindestbestellmenge: 143
FQPF7N80C FAIRS46447-1.pdf?t.download=true&u=5oefqw
FQPF7N80C
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
249+1.99 EUR
Mindestbestellmenge: 249
IXFA7N80P IXFA7N80P_IXFP7N80P.pdf
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.51 EUR
Mindestbestellmenge: 13
IXFA7N80P IXFA7N80P_IXFP7N80P.pdf
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.51 EUR
17+ 4.2 EUR
50+ 2.62 EUR
Mindestbestellmenge: 13
IXFA7N80P media?resourcetype=datasheets&itemid=B00D4E8D-827B-4A04-B106-292ED53206EE&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF
IXFA7N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 1207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.28 EUR
50+ 4.98 EUR
100+ 4.27 EUR
500+ 3.79 EUR
1000+ 3.25 EUR
Mindestbestellmenge: 3
IXFK27N80Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80q_datasheet.pdf.pdf
IXFK27N80Q
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+47.98 EUR
25+ 39.77 EUR
100+ 37.28 EUR
IXFP7N80P IXFA7N80P_IXFP7N80P.pdf
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.73 EUR
18+ 4.18 EUR
20+ 3.75 EUR
21+ 3.56 EUR
Mindestbestellmenge: 16
IXFP7N80P IXFA7N80P_IXFP7N80P.pdf
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.73 EUR
18+ 4.18 EUR
20+ 3.75 EUR
21+ 3.56 EUR
50+ 3.5 EUR
Mindestbestellmenge: 16
IXFP7N80P media?resourcetype=datasheets&itemid=B00D4E8D-827B-4A04-B106-292ED53206EE&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF
IXFP7N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.41 EUR
50+ 6.66 EUR
100+ 5.71 EUR
500+ 5.08 EUR
Mindestbestellmenge: 3
IXFP7N80P media-3322436.pdf
IXFP7N80P
Hersteller: IXYS
MOSFET 7 Amps 800V 1.44 Rds
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.34 EUR
10+ 8.06 EUR
50+ 6.62 EUR
100+ 5.67 EUR
500+ 4.77 EUR
1000+ 4.35 EUR
IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+25.14 EUR
10+ 24.87 EUR
30+ 24.17 EUR
Mindestbestellmenge: 3
IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+25.14 EUR
10+ 24.87 EUR
30+ 24.17 EUR
Mindestbestellmenge: 3
IXFX27N80Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80q_datasheet.pdf.pdf
IXFX27N80Q
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+43.42 EUR
30+ 36 EUR
MSJB17N80-TP
MSJB17N80-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.15 EUR
10+ 6.01 EUR
100+ 4.86 EUR
Mindestbestellmenge: 3
SIHA17N80AE-GE3 siha17n80ae.pdf
SIHA17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.4 EUR
10+ 3.65 EUR
Mindestbestellmenge: 4
SIHA17N80AE-GE3 siha17n80ae.pdf
SIHA17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V N-CHANNEL
auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.5 EUR
10+ 3.03 EUR
100+ 2.41 EUR
250+ 2.29 EUR
500+ 2.18 EUR
1000+ 1.99 EUR
2000+ 1.97 EUR
SIHA17N80AEF-GE3 siha17n80aef.pdf
SIHA17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.33 EUR
10+ 2.79 EUR
Mindestbestellmenge: 6
SIHA17N80E-E3 siha17n80e.pdf
SIHA17N80E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 800V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.69 EUR
Mindestbestellmenge: 3
SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.69 EUR
10+ 6.47 EUR
100+ 5.23 EUR
500+ 4.65 EUR
Mindestbestellmenge: 3
SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.98 EUR
Mindestbestellmenge: 1000
SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 800V
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.05 EUR
10+ 8.22 EUR
25+ 7.43 EUR
100+ 7.18 EUR
500+ 6.9 EUR
1000+ 4.45 EUR
SIHB17N80AE-GE3 sihb17n80ae.pdf
SIHB17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V N-CHANNEL
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.65 EUR
10+ 3.8 EUR
100+ 3.08 EUR
500+ 2.6 EUR
1000+ 2.22 EUR
5000+ 2.02 EUR
10000+ 1.99 EUR
SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Semiconductors
MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 7459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.85 EUR
10+ 6 EUR
25+ 5.81 EUR
100+ 5.05 EUR
250+ 4.93 EUR
500+ 4.63 EUR
1000+ 4.24 EUR
SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.11 EUR
10+ 6.81 EUR
100+ 5.51 EUR
500+ 4.9 EUR
Mindestbestellmenge: 3
SIHB17N80E-T1-GE3 sihb17n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+4.91 EUR
Mindestbestellmenge: 800
SIHB17N80E-T1-GE3 sihb17n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.13 EUR
10+ 6.83 EUR
100+ 5.52 EUR
Mindestbestellmenge: 3
SIHG17N80AE-GE3 sihg17n80ae.pdf
SIHG17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.95 EUR
25+ 3.92 EUR
100+ 3.36 EUR
500+ 2.99 EUR
1000+ 2.56 EUR
Mindestbestellmenge: 4
SIHG17N80AE-GE3 sihg17n80ae.pdf
SIHG17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V N-CHANNEL
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.91 EUR
10+ 4.14 EUR
25+ 4.12 EUR
100+ 3.34 EUR
500+ 2.97 EUR
1000+ 2.55 EUR
SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.09 EUR
10+ 4.28 EUR
100+ 3.46 EUR
Mindestbestellmenge: 4
SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 800V
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.05 EUR
10+ 4.26 EUR
25+ 3.96 EUR
100+ 3.43 EUR
250+ 3.4 EUR
500+ 3.27 EUR
1000+ 3.03 EUR
SIHG17N80E-GE3 sihg17n80e.pdf
SIHG17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V Vds 30V Vgs TO-247AC
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.54 EUR
10+ 7.16 EUR
50+ 6.25 EUR
100+ 5.6 EUR
250+ 5.46 EUR
500+ 5.1 EUR
1000+ 4.4 EUR
SIHG17N80E-GE3 sihg17n80e.pdf
SIHG17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.04 EUR
50+ 4.78 EUR
100+ 4.1 EUR
500+ 4.01 EUR
Mindestbestellmenge: 3
SIHP17N80AE-GE3 sihp17n80ae.pdf
SIHP17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
50+ 3.58 EUR
100+ 2.95 EUR
500+ 2.5 EUR
Mindestbestellmenge: 4
SIHP17N80AE-GE3 sihp17n80ae.pdf
SIHP17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V N-CHANNEL
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.44 EUR
10+ 3.68 EUR
100+ 2.92 EUR
250+ 2.9 EUR
500+ 2.46 EUR
1000+ 2.13 EUR
2500+ 2.04 EUR
SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.61 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
Mindestbestellmenge: 4
SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 800V
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.58 EUR
10+ 3.82 EUR
100+ 3.03 EUR
250+ 2.9 EUR
500+ 2.53 EUR
1000+ 2.18 EUR
2500+ 2.06 EUR
SIHP17N80E-BE3 sihp17n80e.pdf
SIHP17N80E-BE3
Hersteller: Vishay / Siliconix
MOSFET 800V N-CH MOSFET
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.62 EUR
10+ 6.42 EUR
25+ 5.54 EUR
100+ 5.03 EUR
250+ 4.8 EUR
500+ 4.61 EUR
1000+ 4.12 EUR
SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.67 EUR
10+ 6.45 EUR
100+ 5.22 EUR
500+ 4.64 EUR
1000+ 3.97 EUR
Mindestbestellmenge: 3
SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFET 800V Vds 30V Vgs TO-220AB
auf Bestellung 2515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.62 EUR
10+ 6.41 EUR
25+ 6.05 EUR
100+ 5.19 EUR
250+ 4.89 EUR
500+ 4.61 EUR
1000+ 4.44 EUR
SPA17N80C3 description Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf
SPA17N80C3
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 4437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.37 EUR
10+ 6.2 EUR
25+ 5.83 EUR
100+ 5 EUR
250+ 4.93 EUR
500+ 4.17 EUR
1000+ 3.8 EUR
SPA17N80C3XK Infineon-SPA17N80C3-DS-v02_08-EN-1226622.pdf
SPA17N80C3XK
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.37 EUR
10+ 6.2 EUR
25+ 5.83 EUR
100+ 5 EUR
250+ 4.72 EUR
500+ 4.44 EUR
1000+ 3.8 EUR
SPA17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.41 EUR
50+ 5.88 EUR
100+ 5.04 EUR
Mindestbestellmenge: 3
SPA17N80C3XKSA1 Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.74 EUR
25+ 4.79 EUR
100+ 4.56 EUR
1000+ 3.59 EUR
SPA17N80C3XKSA1 2628902905791340infineon-spp_a17n80c3-ds-v02_07-en.pdffolderiddb3a3043163797a6011.pdf
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1181 Stücke:
Lieferzeit 14-21 Tag (e)
SPB17N80C3 SPB17N80C3-DTE.pdf
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.72 EUR
14+ 5.15 EUR
15+ 4.88 EUR
250+ 4.69 EUR
Mindestbestellmenge: 11
SPB17N80C3 SPB17N80C3-DTE.pdf
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 503 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.72 EUR
14+ 5.15 EUR
15+ 4.88 EUR
250+ 4.69 EUR
Mindestbestellmenge: 11
SPB17N80C3
Hersteller: Infineon
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+9.72 EUR
Mindestbestellmenge: 5
SPB17N80C3 Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf
SPB17N80C3
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 7727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.37 EUR
10+ 6.2 EUR
25+ 5.83 EUR
100+ 5 EUR
250+ 4.72 EUR
500+ 4.47 EUR
1000+ 3.8 EUR
SPB17N80C3ATMA1 SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.41 EUR
10+ 6.23 EUR
100+ 5.04 EUR
500+ 4.48 EUR
Mindestbestellmenge: 3
SPB17N80C3ATMA1 SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+3.84 EUR
Mindestbestellmenge: 1000
SPB17N80C3ATMA1 Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 9096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.29 EUR
10+ 6.11 EUR
25+ 5.26 EUR
100+ 4.47 EUR
250+ 4.44 EUR
500+ 3.87 EUR
1000+ 3.57 EUR
SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
12+5.96 EUR
Mindestbestellmenge: 12
SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+5.96 EUR
50+ 4.69 EUR
Mindestbestellmenge: 12
SPP17N80C3 description Infineon_SPP17N80C3_DS_v02_91_en-3363668.pdf
SPP17N80C3
Hersteller: Infineon Technologies
MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.15 EUR
10+ 6.2 EUR
25+ 6.02 EUR
100+ 5.65 EUR
250+ 5.02 EUR
500+ 4.24 EUR
1000+ 4.15 EUR
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