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| Foto | Bezeichnung | Hersteller | Beschreibung |
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SPA17N80C3 Produktcode: 29151 |
Infineon |
  Transistoren > MOSFET N-CHUds,V: 800 V Idd,A: 17 A Rds(on), Ohm: 0,29 Ohm Ciss, pF/Qg, nC: 2320/91 JHGF: THT |
auf Bestellung 16 Stück: Lieferzeit 21-28 Tag (e) |
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SPB17N80C3 Produktcode: 37324 |
Infineon |
Transistoren > MOSFET N-CH Gehäuse: D2Pak Uds,V: 800 Idd,A: 11 Rds(on), Ohm: 0.25 Ciss, pF/Qg, nC: 2300/88 JHGF: SMD |
auf Bestellung 30 Stück: Lieferzeit 21-28 Tag (e) |
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167N80 | Hammond Manufacturing |
Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA7N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA7N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP7N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP7N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP7N80P | IXYS |
MOSFETs 7 Amps 800V 1.44 Rds |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX27N80Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX27N80Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 133 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHA17N80AE-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 7A N-CH MOSFET |
auf Bestellung 1562 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA17N80E-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 15A N-CH MOSFET |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB17N80AE-GE3 | Vishay / Siliconix |
MOSFETs TO263 800V 15A N-CH MOSFET |
auf Bestellung 9885 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB17N80E-GE3 | Vishay Semiconductors |
MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 7459 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG17N80AE-GE3 | Vishay / Siliconix |
MOSFETs TO247 800V 15A N-CH MOSFET |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG17N80AEF-GE3 | Vishay / Siliconix |
MOSFETs TO247 800V 15A N-CH MOSFET |
auf Bestellung 1435 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG17N80E-GE3 | Vishay / Siliconix |
MOSFETs 800V Vds 30V Vgs TO-247AC |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP17N80AE-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 15A N-CH MOSFET |
auf Bestellung 1018 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP17N80AEF-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 15A N-CH MOSFET |
auf Bestellung 1895 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP17N80E-BE3 | Vishay / Siliconix |
MOSFETs TO220 800V 15A N-CH MOSFET |
auf Bestellung 3948 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP17N80E-GE3 | Vishay / Siliconix |
MOSFETs 800V Vds 30V Vgs TO-220AB |
auf Bestellung 2472 Stücke: Lieferzeit 10-14 Tag (e) |
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SPA17N80C3 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3 |
auf Bestellung 3912 Stücke: Lieferzeit 10-14 Tag (e) |
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SPA17N80C3XK | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3 |
auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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SPA17N80C3XKSA1 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3 |
auf Bestellung 918 Stücke: Lieferzeit 10-14 Tag (e) |
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SPB17N80C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 227W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPB17N80C3 | Infineon |
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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SPB17N80C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 227W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 470 Stücke: Lieferzeit 7-14 Tag (e) |
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SPB17N80C3 | Infineon Technologies |
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3 |
auf Bestellung 7577 Stücke: Lieferzeit 10-14 Tag (e) |
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SPB17N80C3ATMA1 | Infineon Technologies |
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3 |
auf Bestellung 4913 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPP17N80C3 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3 |
auf Bestellung 1353 Stücke: Lieferzeit 10-14 Tag (e) |
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SPP17N80C3XKSA1 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3 |
auf Bestellung 1056 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 227W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 227W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 228 Stücke: Lieferzeit 7-14 Tag (e) |
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SPW17N80C3 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3 |
auf Bestellung 603 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPW17N80C3A | Infineon |
MOSFET N-Channel 800V 17A (Tc) TO-247AD |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW17N80C3FKSA1 | Infineon Technologies |
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3 |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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STB17N80K5 | STMicroelectronics |
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N80K5 | STMicroelectronics |
MOSFETs N-Ch 800V 0.95 Ohm 6A MDmesh K5 |
auf Bestellung 2948 Stücke: Lieferzeit 10-14 Tag (e) |
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STF17N80K5 | STMicroelectronics |
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET |
auf Bestellung 311 Stücke: Lieferzeit 10-14 Tag (e) |
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STF7N80K5 | STMicroelectronics |
MOSFETs N-Ch 800V 0.95Ohm 6A MDmesh K5 |
auf Bestellung 1879 Stücke: Lieferzeit 10-14 Tag (e) |
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STL7N80K5 | STMicroelectronics |
MOSFETs N-Ch 800V .95Ohm typ 3.6A Zener-protected |
auf Bestellung 4338 Stücke: Lieferzeit 10-14 Tag (e) |
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STP17N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 56A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP17N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 56A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STP17N80K5 | STMicroelectronics |
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET |
auf Bestellung 739 Stücke: Lieferzeit 10-14 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP7N80K5 | ST |
Trans MOSFET N-CH 800V 6A STP7N80K5 TSTP7N80K5 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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STU7N80K5 | STMicroelectronics |
MOSFETs N-Ch 800 V 0.95 Ohm 6 A Zener-protecte |
auf Bestellung 1841 Stücke: Lieferzeit 10-14 Tag (e) |
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WML07N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 26W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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WML07N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 26W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 121 Stücke: Lieferzeit 7-14 Tag (e) |
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| 17N80C3 | INFINEON | 09+ 3/TO220 |
auf Bestellung 2048 Stücke: Lieferzeit 21-28 Tag (e) |
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| APT17N80BC3 | APT |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| APT17N80SC3 |
auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQA7N80 | Fairchild |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N80 | FAIRCHILD |
auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N80 | FAIRCHILD | 07+ SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N80 | FAIRCHILD | SOT-263 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N80 | FAIRC | 09+ DIP16 |
auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB7N80 | fairchild | to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
| SPA17N80C3 Produktcode: 29151 |
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Hersteller: Infineon
Transistoren > MOSFET N-CH
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
Transistoren > MOSFET N-CH
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 16 Stück:
Lieferzeit 21-28 Tag (e)| SPB17N80C3 Produktcode: 37324 |
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Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 30 Stück:
Lieferzeit 21-28 Tag (e)| 167N80 |
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Hersteller: Hammond Manufacturing
Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 183.18 EUR |
| 10+ | 177.36 EUR |
| 25+ | 175.7 EUR |
| 50+ | 171.93 EUR |
| 100+ | 152.89 EUR |
| IXFA7N80P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.51 EUR |
| IXFA7N80P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.51 EUR |
| 17+ | 4.2 EUR |
| 50+ | 2.62 EUR |
| IXFP7N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.19 EUR |
| 20+ | 3.76 EUR |
| 21+ | 3.56 EUR |
| IXFP7N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.19 EUR |
| 20+ | 3.76 EUR |
| 21+ | 3.56 EUR |
| 500+ | 3.46 EUR |
| IXFP7N80P |
|
Hersteller: IXYS
MOSFETs 7 Amps 800V 1.44 Rds
MOSFETs 7 Amps 800V 1.44 Rds
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5 EUR |
| 50+ | 4.35 EUR |
| IXFX27N80Q |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.3 EUR |
| 10+ | 24.87 EUR |
| 30+ | 24.32 EUR |
| IXFX27N80Q |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.3 EUR |
| 10+ | 24.87 EUR |
| 30+ | 24.32 EUR |
| SIHA17N80AE-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 7A N-CH MOSFET
MOSFETs TO220 800V 7A N-CH MOSFET
auf Bestellung 1562 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.15 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.97 EUR |
| 1000+ | 1.95 EUR |
| 5000+ | 1.9 EUR |
| SIHA17N80E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.64 EUR |
| 10+ | 6.42 EUR |
| 25+ | 6.35 EUR |
| 100+ | 5.21 EUR |
| 250+ | 5.14 EUR |
| 500+ | 4.63 EUR |
| 1000+ | 3.94 EUR |
| SIHB17N80AE-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO263 800V 15A N-CH MOSFET
MOSFETs TO263 800V 15A N-CH MOSFET
auf Bestellung 9885 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 3.66 EUR |
| 100+ | 2.99 EUR |
| 250+ | 2.89 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.04 EUR |
| 2500+ | 2.02 EUR |
| SIHB17N80E-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)
MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 7459 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.44 EUR |
| 10+ | 5.09 EUR |
| 25+ | 5.02 EUR |
| 100+ | 4.24 EUR |
| SIHG17N80AE-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 15A N-CH MOSFET
MOSFETs TO247 800V 15A N-CH MOSFET
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.91 EUR |
| 10+ | 4.14 EUR |
| 25+ | 3.89 EUR |
| 100+ | 3.34 EUR |
| 250+ | 3.15 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.43 EUR |
| SIHG17N80AEF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 15A N-CH MOSFET
MOSFETs TO247 800V 15A N-CH MOSFET
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.05 EUR |
| 10+ | 4.26 EUR |
| 25+ | 4.14 EUR |
| 100+ | 3.43 EUR |
| 250+ | 3.34 EUR |
| 500+ | 3.13 EUR |
| 1000+ | 2.6 EUR |
| SIHG17N80E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 800V Vds 30V Vgs TO-247AC
MOSFETs 800V Vds 30V Vgs TO-247AC
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.98 EUR |
| 50+ | 4.72 EUR |
| 100+ | 4.28 EUR |
| SIHP17N80AE-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1018 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.12 EUR |
| 10+ | 2.5 EUR |
| 100+ | 2.04 EUR |
| 250+ | 2.02 EUR |
| 500+ | 2.01 EUR |
| SIHP17N80AEF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 3.82 EUR |
| 100+ | 3.03 EUR |
| 250+ | 2.9 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.18 EUR |
| 2500+ | 2.06 EUR |
| SIHP17N80E-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 3948 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.62 EUR |
| 10+ | 6.42 EUR |
| 25+ | 4.95 EUR |
| 100+ | 4.82 EUR |
| 250+ | 4.73 EUR |
| 500+ | 4.61 EUR |
| 1000+ | 3.98 EUR |
| SIHP17N80E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 800V Vds 30V Vgs TO-220AB
MOSFETs 800V Vds 30V Vgs TO-220AB
auf Bestellung 2472 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.62 EUR |
| 10+ | 6.41 EUR |
| 25+ | 6.05 EUR |
| 100+ | 5.19 EUR |
| 250+ | 4.89 EUR |
| 500+ | 4.61 EUR |
| 1000+ | 4.44 EUR |
| SPA17N80C3 | |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 3912 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.37 EUR |
| 10+ | 6.2 EUR |
| 25+ | 5.83 EUR |
| 100+ | 5 EUR |
| 250+ | 4.93 EUR |
| 500+ | 4.17 EUR |
| 1000+ | 3.8 EUR |
| SPA17N80C3XK |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.37 EUR |
| 10+ | 6.2 EUR |
| 25+ | 5.83 EUR |
| 100+ | 5 EUR |
| 250+ | 4.72 EUR |
| 500+ | 4.44 EUR |
| 1000+ | 3.8 EUR |
| SPA17N80C3XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 918 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.41 EUR |
| 10+ | 5.4 EUR |
| 25+ | 4.29 EUR |
| 100+ | 3.7 EUR |
| 250+ | 3.57 EUR |
| SPB17N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.72 EUR |
| 14+ | 5.15 EUR |
| 15+ | 4.88 EUR |
| 250+ | 4.69 EUR |
| SPB17N80C3 |
Hersteller: Infineon
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 8.84 EUR |
| SPB17N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.72 EUR |
| 14+ | 5.15 EUR |
| 15+ | 4.88 EUR |
| 250+ | 4.69 EUR |
| SPB17N80C3 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 7577 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.37 EUR |
| 10+ | 6.2 EUR |
| 25+ | 5.83 EUR |
| 100+ | 5 EUR |
| 250+ | 4.72 EUR |
| 500+ | 4.47 EUR |
| 1000+ | 3.8 EUR |
| SPB17N80C3ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 4913 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.66 EUR |
| 10+ | 5.91 EUR |
| 25+ | 5.9 EUR |
| 100+ | 4.24 EUR |
| 250+ | 4.07 EUR |
| 500+ | 3.57 EUR |
| SPP17N80C3 | |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPP17N80C3 | |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 1353 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.48 EUR |
| 10+ | 6.2 EUR |
| 25+ | 6.02 EUR |
| 100+ | 5.65 EUR |
| 250+ | 5.58 EUR |
| 500+ | 4.75 EUR |
| 1000+ | 4.73 EUR |
| SPP17N80C3XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 1056 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.62 EUR |
| 10+ | 5.91 EUR |
| 25+ | 5.53 EUR |
| 100+ | 4.22 EUR |
| 250+ | 4.21 EUR |
| 500+ | 3.57 EUR |
| SPW17N80C3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.28 EUR |
| 12+ | 5.99 EUR |
| 13+ | 5.68 EUR |
| SPW17N80C3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.28 EUR |
| 12+ | 5.99 EUR |
| 13+ | 5.68 EUR |
| SPW17N80C3 | |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
auf Bestellung 603 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.55 EUR |
| 10+ | 7.18 EUR |
| 25+ | 6.79 EUR |
| 100+ | 5.81 EUR |
| 240+ | 5.49 EUR |
| 480+ | 5.17 EUR |
| 1200+ | 4.42 EUR |
| SPW17N80C3A |
|
Hersteller: Infineon
MOSFET N-Channel 800V 17A (Tc) TO-247AD
MOSFET N-Channel 800V 17A (Tc) TO-247AD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.28 EUR |
| SPW17N80C3FKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.24 EUR |
| 10+ | 6.67 EUR |
| 25+ | 6.53 EUR |
| 100+ | 4.8 EUR |
| 240+ | 4.79 EUR |
| 480+ | 4.17 EUR |
| STB17N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.23 EUR |
| 10+ | 6.07 EUR |
| 25+ | 6 EUR |
| 100+ | 4.91 EUR |
| 250+ | 4.88 EUR |
| 500+ | 4.36 EUR |
| 1000+ | 3.63 EUR |
| STD7N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 800V 0.95 Ohm 6A MDmesh K5
MOSFETs N-Ch 800V 0.95 Ohm 6A MDmesh K5
auf Bestellung 2948 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.19 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.11 EUR |
| 250+ | 1.95 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.52 EUR |
| 2500+ | 1.44 EUR |
| STF17N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 5.6 EUR |
| 25+ | 5.42 EUR |
| 100+ | 4.63 EUR |
| 250+ | 4.38 EUR |
| 500+ | 3.87 EUR |
| 1000+ | 3.4 EUR |
| STF7N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 800V 0.95Ohm 6A MDmesh K5
MOSFETs N-Ch 800V 0.95Ohm 6A MDmesh K5
auf Bestellung 1879 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.36 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.69 EUR |
| 2000+ | 1.62 EUR |
| 5000+ | 1.57 EUR |
| STL7N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 800V .95Ohm typ 3.6A Zener-protected
MOSFETs N-Ch 800V .95Ohm typ 3.6A Zener-protected
auf Bestellung 4338 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.36 EUR |
| 250+ | 2.25 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.69 EUR |
| 3000+ | 1.62 EUR |
| STP17N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 5.96 EUR |
| 18+ | 4.1 EUR |
| 19+ | 3.89 EUR |
| STP17N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 9A; Idm: 56A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 56A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 5.96 EUR |
| 18+ | 4.1 EUR |
| 19+ | 3.89 EUR |
| STP17N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET
MOSFETs N-channel 800 V, 0.29 Ohm typ 14 A MDmesh K5 Power MOSFET
auf Bestellung 739 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.23 EUR |
| 10+ | 6.07 EUR |
| 25+ | 5.74 EUR |
| 100+ | 4.93 EUR |
| 250+ | 4.65 EUR |
| 500+ | 4.36 EUR |
| 1000+ | 3.73 EUR |
| STP7N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.72 EUR |
| 30+ | 2.46 EUR |
| 39+ | 1.87 EUR |
| 41+ | 1.77 EUR |
| STP7N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.72 EUR |
| 30+ | 2.46 EUR |
| 39+ | 1.87 EUR |
| 41+ | 1.77 EUR |
| STP7N80K5 |
|
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.01 EUR |
| STU7N80K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
MOSFETs N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
auf Bestellung 1841 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.27 EUR |
| 100+ | 2.06 EUR |
| 250+ | 1.99 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.65 EUR |
| 3000+ | 1.58 EUR |
| WML07N80M3 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.12 EUR |
| 98+ | 0.73 EUR |
| 113+ | 0.63 EUR |
| 121+ | 0.59 EUR |
| WML07N80M3 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.12 EUR |
| 98+ | 0.73 EUR |
| 113+ | 0.63 EUR |
| 121+ | 0.59 EUR |
| 500+ | 0.54 EUR |
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