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AONS66916
Produktcode: 214186
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Transistoren > MOSFET N-CH
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AONS66916Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 30A 8-Pin DFN EP T/R
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 Mindestbestellmenge: 3000 Stücke
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AONS66916Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS66916TAlpha & Omega Semiconductor Inc.Description: AONS66916T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 184A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS66916TALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 184A; Idm: 670A
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 184A
Pulsed drain current: 670A
Power dissipation: 129W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS66917Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
auf Bestellung 5629 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.09 EUR
10+6.03 EUR
100+4.28 EUR
500+3.75 EUR
Mindestbestellmenge: 3 Stücke
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AONS66917Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 100A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS66917Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.07 EUR
Mindestbestellmenge: 3000 Stücke
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AONS66917TAlpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
Produkt ist nicht verfügbar
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AONS66917TAlpha & Omega SemiconductorN-Channel AlphaSGT
Produkt ist nicht verfügbar
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AONS66919Alpha & Omega Semiconductor Inc.Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66919Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+2.78 EUR
25+2.37 EUR
100+1.9 EUR
250+1.68 EUR
500+1.55 EUR
1000+1.43 EUR
Mindestbestellmenge: 5 Stücke
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AONS66920Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 47226 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+2.51 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.24 EUR
Mindestbestellmenge: 6 Stücke
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AONS66920Alpha & Omega Semiconductor100V N-Channel AlphaSGT
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS66920Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.09 EUR
6000+1.02 EUR
9000+0.99 EUR
15000+0.98 EUR
Mindestbestellmenge: 3000 Stücke
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AONS66920ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 48A; Idm: 125A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 125A
Power dissipation: 22.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: AlphaSGT™
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS66923Alpha & Omega Semiconductor100V N-Channel MOSFET
Produkt ist nicht verfügbar
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AONS66923Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 14765 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.62 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
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AONS66923Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.01 EUR
6000+0.96 EUR
Mindestbestellmenge: 3000 Stücke
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AONS66966Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.79 EUR
10+5.12 EUR
100+3.59 EUR
500+2.94 EUR
1000+2.73 EUR
Mindestbestellmenge: 3 Stücke
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AONS66966Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.62 EUR
Mindestbestellmenge: 3000 Stücke
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AONS67614Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS67614Alpha & Omega Semiconductor60V N-Channel MOSFET
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AONS68520ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 208W; DFN8
Mounting: SMD
Power dissipation: 208W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DFN8
On-state resistance: 9.6mΩ
Produkt ist nicht verfügbar
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AONS850A70Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V
Power Dissipation (Max): 4.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONT21313CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONT32136CAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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AONV070V65G1Alpha & Omega Semiconductor Inc.Description: GAN
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
Produkt ist nicht verfügbar
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AONV110A60Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tube
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AONV110A60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; Idm: 140A; 357W; DFN8x8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 0.11Ω
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 357W
Pulsed drain current: 140A
Drain-source voltage: 600V
Kind of package: reel; tape
Case: DFN8x8
Kind of channel: enhancement
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AONV125A60Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 8.3W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 100 V
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AONV140A60Alpha & Omega Semiconductor Inc.Description: N
Part Status: Active
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 312W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AONV180A60Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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AONV210A60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 208W; DFN8x8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.21Ω
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 208W
Pulsed drain current: 80A
Drain-source voltage: 600V
Kind of package: reel; tape
Case: DFN8x8
Kind of channel: enhancement
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AONV210A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AONV210A60ALPHA&OMEGA600V, A MOS5 TM N-CHANNEL POWER AONV210A60 TAONV210A60
Anzahl je Verpackung: 2 Stücke
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Lieferzeit 7-14 Tag (e)
2+22.71 EUR
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AONV420A70Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 8.3W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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AONX36320Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AONX36324Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AONX38168Alpha & Omega Semiconductor25V Dual Asymmetric N-Channel MOSFET
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AONX38168Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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10+3.52 EUR
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AONX38168ALPHA&OMEGA25V DUAL ASYMMETRIC N-CHANNEL XS AONX38168 Alpha & Omega Semiconductor Inc. TAONX38168
Anzahl je Verpackung: 2 Stücke
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AONX38168Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AONX38320Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 27A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AONX38320ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 42/147A; 9.6/29W; DFN5x6E
Case: DFN5x6E
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.3/1.02mΩ
Power dissipation: 9.6/29W
Gate-source voltage: ±16/±12V
Drain-source voltage: 30V
Drain current: 42/147A
Semiconductor structure: asymmetric
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AONY36304Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AONY36306Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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AONY36352
Produktcode: 190950
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Transistoren > MOSFET N-CH
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AONY36352Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 18.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
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100+1.58 EUR
500+1.25 EUR
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AONY36352ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/72.5A; 8.5/18W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/72.5A
Power dissipation: 8.5/18W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
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AONY36352Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 18.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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AONY36352Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 18.5A/30A 8-Pin DFN-B EP T/R
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AONY36354ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54.5A; 8.5/12.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54.5A
Power dissipation: 8.5/12.5W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.3/2.6mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
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AONY36354Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 49A/85A 8-Pin DFN-D EP T/R
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AONY36354Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 18.5A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Technology: MOSFET (Metal Oxide)
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AONY36354
Produktcode: 187074
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Transistoren > MOSFET N-CH
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AONY36354Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 18.5A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
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AONY36356Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 17.5A/24A 8-Pin DFN-B EP T/R
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AONY36356Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36356Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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7+3.33 EUR
10+2.12 EUR
25+1.8 EUR
100+1.43 EUR
250+1.25 EUR
500+1.14 EUR
1000+1.05 EUR
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AONY36356ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 32A; 8.7/13W; DFN5x6B
Mounting: SMD
Power dissipation: 8.7/13W
Gate charge: 13/30nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: asymmetric
Case: DFN5x6B
On-state resistance: 6.1/3.8mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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