Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| DMN2710UDW-7 | DIODES INC. | Description: DIODES INC. - DMN2710UDW-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.15 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 800mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.15ohm Verlustleistung, p-Kanal: 490mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.15ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 490mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UDW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT363 T&R 3K | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UDW-7 | DIODES INC. | Description: DIODES INC. - DMN2710UDW-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.15 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 800mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.15ohm Verlustleistung, p-Kanal: 490mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.15ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 490mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 273 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.8A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 360mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UDW-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.8A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 360mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UDWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.8A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 360mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UDWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT363 T&R 3K | auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UDWQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.8A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 360mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 48000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UFB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K | auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UFB-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Bulk Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 81000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UFB-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UFB-7B | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Bulk Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 80000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UFBQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 2660 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UFBQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K | auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UFBQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UFBQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2710UFBQ-7B | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT523 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UT-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 870mA; 520mW; SOT523 Power dissipation: 0.52W Gate charge: 0.6nC Polarisation: unipolar Drain current: 870mA Drain-source voltage: 20V Type of transistor: N-MOSFET Case: SOT523 On-state resistance: 0.45Ω Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UT-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UT-13 | DIODES INC. | Description: DIODES INC. - DMN2710UT-13 - Leistungs-MOSFET, n-Kanal, 20 V, 870 mA, 0.14 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 870mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 520mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 520mW Bauform - Transistor: SOT-523 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.14ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.14ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7435 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2710UT-13 | DIODES INC. | Description: DIODES INC. - DMN2710UT-13 - Leistungs-MOSFET, n-Kanal, 20 V, 870 mA, 0.14 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 870mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 520mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.14ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7435 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2710UT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT523 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Kind of package: 7 inch reel; tape Pulsed drain current: 5.6A Power dissipation: 0.52W Gate charge: 0.6nC Polarisation: unipolar Drain current: 0.7A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±6V Case: SOT523 On-state resistance: 0.75Ω Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 45000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UTQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT523 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UTQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 50000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UTQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UTQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 870mA; 320mW Power dissipation: 0.32W Gate charge: 0.6nC Polarisation: unipolar Drain current: 870mA Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET On-state resistance: 0.45Ω Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UTQ-7 | DIODES INC. | Description: DIODES INC. - DMN2710UTQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 870 mA, 0.14 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 870mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 520mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.14ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1044 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2710UTQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT523 T&R Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3756 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UTQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 3K | auf Bestellung 31630 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UTQ-7 | DIODES INC. | Description: DIODES INC. - DMN2710UTQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 870 mA, 0.14 ohm, SOT-523, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 870mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 520mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.14ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1044 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2710UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UVQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 11441 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UVQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 3K | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 80000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | auf Bestellung 5814 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K | auf Bestellung 2610 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 10K | auf Bestellung 9700 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 70000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2710UWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K | auf Bestellung 2575 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.45A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 6333460 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.45A 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UDJ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.45A SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 6330000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT963,10K | auf Bestellung 52540 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.45A 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UDJ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.45A 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UDJQ-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UDJQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 0.45A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 134877 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 0.45A SOT963 Supplier Device Package: SOT-963 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) | auf Bestellung 130000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJQ-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.45A Automotive 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UFA-7B | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.33A; 0.4W; X2-DFN0806-3; ESD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UFA-7B | DIODES INC. | Description: DIODES INC. - DMN2990UFA-7B - Leistungs-MOSFET, n-Kanal, 20 V, 510 mA, 0.99 ohm, X2-DFN0806, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 510mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 400mW Bauform - Transistor: X2-DFN0806 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.99ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UFA-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 510MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 510mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFA-7B | DIODES INC. | Description: DIODES INC. - DMN2990UFA-7B - Leistungs-MOSFET, n-Kanal, 20 V, 510 mA, 0.99 ohm, X2-DFN0806, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 510mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: - usEccn: EAR99 Verlustleistung Pd: 400mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 400mW Bauform - Transistor: X2-DFN0806 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.6ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.99ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UFA-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | auf Bestellung 17284 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFA-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 510MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 510mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V | auf Bestellung 104957 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFB-7B | Diodes Incorporated | MOSFET MOSFET | auf Bestellung 6800 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFB-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 780MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 780mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250A Supplier Device Package: X1-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 2318899 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFB-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 780MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 780mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250A Supplier Device Package: X1-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 2310000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFO-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 750MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0604-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V | auf Bestellung 2990000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFO-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 750MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0604-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V | auf Bestellung 2990880 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFO-7B | Diodes Incorporated | MOSFETs MOSFETBVDSS: 8V-24V | auf Bestellung 6793 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFZ-7B | Diodes Zetex | Trans MOSFET N-CH 20V 0.25A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UFZ-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 250MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V | auf Bestellung 1640000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFZ-7B | Diodes Incorporated | MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF | auf Bestellung 29167 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFZ-7B | Diodes Zetex | Trans MOSFET N-CH 20V 0.25A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2990UFZ-7B | Diodes Zetex | Trans MOSFET N-CH 20V 0.25A 3-Pin X2-DFN T/R | auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2990UFZ-7B | Diodes Incorporated | Description: MOSFET N-CH 20V 250MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: X2-DFN0606-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) | auf Bestellung 1650325 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDA-7B | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.45A 6DFN Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 310mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: X2-DFN0806-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V | auf Bestellung 2678551 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDA-7B | DIODES INC. | Description: DIODES INC. - DMN2991UDA-7B - Dual-MOSFET, n-Kanal, 20 V, 20 V, 450 mA, 450 mA, 0.99 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 450mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 450mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN0806 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.99ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 310mW Betriebstemperatur, max.: 150°C | auf Bestellung 3517 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2991UDA-7B | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.45A 6DFN Part Status: Active Supplier Device Package: X2-DFN0806-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 310mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Packaging: Tape & Reel (TR) | auf Bestellung 2670000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDA-7B | DIODES INC. | Description: DIODES INC. - DMN2991UDA-7B - Dual-MOSFET, n-Kanal, 20 V, 20 V, 450 mA, 450 mA, 0.99 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 450mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 450mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN0806 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.99ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 310mW Betriebstemperatur, max.: 150°C | auf Bestellung 3517 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN2991UDJ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT963 T&R 10K | auf Bestellung 18447 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDJ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.52A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 235566 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDJ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 308mA; Idm: 1.4A; 400mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2991UDJ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.52A SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 220000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDJ-7A | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT963 T&R 10K | auf Bestellung 10979 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDR4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1010-6 T&R 5K | auf Bestellung 5680 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDR4-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.5A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) | auf Bestellung 3090 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDR4-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2991UDR4-7R | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) | auf Bestellung 1665000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDR4-7R | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.5A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) | auf Bestellung 1667476 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UDR4-7R | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V X2-DFN1010-6 T&R 5K | auf Bestellung 14413 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UFA-7B | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN0806- Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2991UFA-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V X2-DFN0806-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMN2991UFB4-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | auf Bestellung 15131 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2991UFB4-7B | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN1006- | auf Bestellung 9900 Stücke: Lieferzeit 10-14 Tag (e) |
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