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GCMS007C120S1-E1SemiQ Gen3 1200V 7mO SiC MOSFET Co-Pack, SOT-227
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GCMS007C120S1-E1SemiQDescription: GEN3 1200V 7M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 18V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 13094 pF @ 1000 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+72.73 EUR
10+54.36 EUR
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GCMS008A120B1B1SemiQDescription: SIC MOSFET/SBD HALF BRIDGE MODUL
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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GCMS008C120S1-E1SemiQDescription: GEN3 1200V 8M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
1+98.9 EUR
10+74.8 EUR
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GCMS008C120S1-E1SemiQMOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
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GCMS010B120S1-E1SemiQDescription: 1700V, 15M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 416 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10878 pF @ 1000 V
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
1+125.25 EUR
10+96.18 EUR
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GCMS014C120S1-E1SemiQDescription: GEN3 1200V 14M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6331 pF @ 1000 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+73.35 EUR
10+54.51 EUR
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GCMS016C120S1-E1SemiQDescription: GEN3 1200V 16M SIC MOSFET & SBD
auf Bestellung 26 Stücke:
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1+73.3 EUR
10+54.48 EUR
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GCMS020A120S1-E1SemiQDescription: SIC MOSFET/ SBD MODULE SOT-227 C
auf Bestellung 2 Stücke:
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GCMS020A120S1-E1SemiQDiscrete Semiconductor Modules SiC MOSFET/ SBD Module SOT-227 Copak 1200V 20 mohm
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+253.86 EUR
10+227.18 EUR
20+223.58 EUR
50+218.03 EUR
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GCMS020B120S1-E1SemiQDiscrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227
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GCMS020B120S1-E1SemiQDescription: SIC 1200V 20M MOSFET & 50A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5279 pF @ 1000 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
1+87.22 EUR
10+65.56 EUR
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GCMS034C120S1-E1SemiQDescription: GEN3 1200V 34M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 18V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 1000 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.51 EUR
10+42.91 EUR
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GCMS040A120B1H1SemiQDescription: SIC MOSFET FULL BRIDGE MODULE B1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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GCMS040A120B3C1SemiQDescription: SIC MOSFET 6-PACK MODULE B2_EASY
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 Mindestbestellmenge: 10 Stücke
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GCMS040A120S1-E1SemiQDescription: SIC MOSFET/ SBD MODULE SOT-227 C
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 Mindestbestellmenge: 6 Stücke
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GCMS040A120S1-E1SemiQDiscrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 40 mohm
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GCMS040B120S1-E1SemiQMOSFET Modules 1200V SiC COPACK Power Module
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.53 EUR
10+39.9 EUR
100+35.03 EUR
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GCMS040B120S1-E1SemiQDescription: SIC 1200V 40M MOSFET & 15A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 1000 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.3 EUR
10+43.51 EUR
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GCMS040C120S1-E1SemiQDescription: GEN3 1200V 40M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 1000 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
1+57.89 EUR
10+42.42 EUR
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GCMS080A120B3C1Global Power Technologies GroupDescription: SIC MOSFET 6-PACK MODULE B2_EASY
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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GCMS080A120S1-E1SemiQDiscrete Semiconductor Modules SiC MOSFET/SBD Module SOT-227 Copak 1200V 80 mohm
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GCMS080B120S1-E1SemiQDiscrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.19 EUR
10+29.16 EUR
100+28.32 EUR
1000+24.53 EUR
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GCMS080B120S1-E1SemiQDescription: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
1+53.13 EUR
10+38.79 EUR
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GCMS080C120S1-E1SemiQMOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GCMS080C120S1-E1SemiQDescription: GEN3 1200V 80M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1332 pF @ 1000 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.3 EUR
10+38.08 EUR
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GCMX003A120S3B1-NSemiQMOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+469.72 EUR
10+400.33 EUR
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GCMX003A120S3B1-NSemiQDescription: 1200V, 3M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2113W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 625A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+454.7 EUR
15+409.32 EUR
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GCMX003A120S7B1SemiQDescription: 1200V 3M SIC HALF BRIDGE 62MM MO
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.546kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Vgs(th) (Max) @ Id: 4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs: 1326nC @ 20V
Rds On (Max) @ Id, Vgs: 6mOhm @ 300A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 37200pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Produkt ist nicht verfügbar
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GCMX005A120S3B1-NSemiQDescription: 1200V, 5M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.531kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 424A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 26400pF @ 800V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 901nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+346.92 EUR
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GCMX005A170S3B1-NSemiQDescription: SIC MOSFET MOD
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2113W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 397A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 43600pF @ 1200V
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1416nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+561.51 EUR
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GCMX007C120S1-E1SemiQDescription: GEN3 1200V 7M SIC MOSFET MODULE,
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 12952 pF @ 1000 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.71 EUR
10+46.96 EUR
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GCMX008C120S1-E1SemiQDescription: GEN3 1200V 8M SIC MOSFET MODULE,
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14067 pF @ 1000 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.3 EUR
10+46.71 EUR
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GCMX010A120B2B1PSemiQMOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
Produkt ist nicht verfügbar
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GCMX010A120B2B1PSemiQDescription: MOSFET 2N-CH 1200V 214A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 750W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
1+156.34 EUR
10+121.81 EUR
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GCMX010A120B3B1PSemiQMOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
Produkt ist nicht verfügbar
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GCMX010A120B3B1PSemiQDescription: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 577W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+191.69 EUR
10+157.88 EUR
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GCMX010A120B3H1PSemiQMOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module
Produkt ist nicht verfügbar
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GCMX010B120S1-E1SemiQDescription: 1200V, 10M SIC MOSFET MODULE, SO
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 418 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 10864 pF @ 1000 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
1+102.54 EUR
10+77.73 EUR
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GCMX014C120S1-E1SemiQDescription: GEN3 1200V 14M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6288 pF @ 1000 V
auf Bestellung 12 Stücke:
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1+60.34 EUR
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GCMX015A170S1-E1SemiQDescription: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12803 pF @ 1200 V
auf Bestellung 20 Stücke:
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1+111.4 EUR
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GCMX016C120S1-E1SemiQDescription: GEN3 1200V 16M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 248 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6822 pF @ 1000 V
auf Bestellung 39 Stücke:
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GCMX020A120B2B1PSemiQDescription: MOSFET 2N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 241nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
auf Bestellung 11 Stücke:
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GCMX020A120B2B1PSemiQMOSFET Modules SiC 1200V 20mohm MOSFET Half-Bridge Module
auf Bestellung 18 Stücke:
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GCMX020A120B2H1PSemiQDescription: MOSFET 4N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
auf Bestellung 10 Stücke:
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GCMX020A120B2H1PSemiQMOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
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GCMX020A120B2H2PSemiQDescription: 1200V, 20M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
auf Bestellung 34 Stücke:
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GCMX020A120B2H2PSemiQMOSFET Modules 1200V, 20mohm SiC MOSFET Full Bridge Module
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GCMX020A120B3H1PSemiQMOSFET Modules SiC 1200V 20mohm MOSFET Full-Bridge Module
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GCMX020B120S1-E1SemiQMOSFET Modules SiC 1200V 20mohm MOSFET SOT-227
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GCMX020B120S1-E1SemiQDescription: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 172 Stücke:
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1+73.8 EUR
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GCMX030A170S1-E1SemiQDescription: SIC MOSFET MOD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 50A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6333 pF @ 1.2 kV
auf Bestellung 6 Stücke:
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1+68.54 EUR
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GCMX034B120B2H2PSemiQDescription: GEN3 1200V 34M SIC MOSFET FULL B
auf Bestellung 40 Stücke:
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1+84 EUR
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GCMX034B120B2T1PSemiQDescription: GEN3 1200V 34M SIC MOSFET SIX-PA
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GCMX034C120S1-E1SemiQDescription: GEN3 1200V 34M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 1000 V
auf Bestellung 20 Stücke:
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1+53.22 EUR
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GCMX040A120B2B1PSemiQDescription: 1200V, 40M SIC MOSFET HALF BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 40 Stücke:
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1+98.83 EUR
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GCMX040A120B2B1PSemiQMOSFET Modules 1200V, 40mohm SiC MOSFET Half Bridge Module
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GCMX040A120B2H1PSemiQDescription: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
Produkt ist nicht verfügbar
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GCMX040A120B2H1PSemiQMOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
Produkt ist nicht verfügbar
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GCMX040A120B2H2PSemiQMOSFET Modules 1200V, 40mohm SiC MOSFET Full Bridge Module
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GCMX040A120B2T1PSemiQMOSFET Modules 1200V 40ohm SiC MOSFET Six-Pack Module
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GCMX040A120B2T1PSemiQDescription: 1200V 40 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 160W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 5 Stücke:
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1+98.21 EUR
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GCMX040A120B3H1PSemiQMOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module
auf Bestellung 31 Stücke:
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1+103.9 EUR
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100+77.39 EUR
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GCMX040B120S1-E1SemiQDescription: SIC 1200V 40M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 1000 V
auf Bestellung 158 Stücke:
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GCMX040B120S1-E1SemiQMOSFET Modules 1200V SiC MOSFET Power Module
auf Bestellung 36 Stücke:
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1+42.46 EUR
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GCMX040C120S1-E1SemiQMOSFET Modules Gen3 1200V 40mohm SiC MOSFET Module, SOT-227
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GCMX040C120S1-E1SemiQDescription: GEN3 1200V 40M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 1000 V
auf Bestellung 17 Stücke:
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1+51.94 EUR
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GCMX080A120B2H1PSemiQMOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
auf Bestellung 36 Stücke:
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GCMX080A120B2H1PSemiQDescription: MOSFET 4N-CH 1200V 27A
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 119W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 8 Stücke:
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1+78.48 EUR
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GCMX080A120B2H2PSemiQDescription: 1200V, 80M SIC MOSFET FULL BRIDG
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 40 Stücke:
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GCMX080A120B2H2PSemiQMOSFET Modules 1200V, 80mohm SiC MOSFET Full Bridge Module
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GCMX080A120B2T1PSemiQMOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
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GCMX080A120B2T1PSemiQDescription: 1200V 80 SIC MOSFET SIX-PACK MOD
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 103W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Configuration: 6 N-Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 13 Stücke:
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1+66.91 EUR
10+49.74 EUR
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GCMX080B120S1-E1SemiQDescription: SIC 1200V 80M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
auf Bestellung 47 Stücke:
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1+49.97 EUR
10+36.33 EUR
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GCMX080B120S1-E1SemiQMOSFET Modules SiC 1200V 80mO MOSFET SOT-227
auf Bestellung 57 Stücke:
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1+36.57 EUR
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GCMX080C120S1-E1SemiQMOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
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GCMX080C120S1-E1SemiQDescription: GEN3 1200V 80M SIC MOSFET MODULE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 1000 V
auf Bestellung 30 Stücke:
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1+49.05 EUR
10+35.59 EUR
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GCMX2P3B120S3B1-NSemiQDescription: GEN3 1200V 2.4M SIC 62MM HALF BR
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1705W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 608A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 42900pF @ 800V
Rds On (Max) @ Id, Vgs: 3mOhm @ 300A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1566nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 120mA
auf Bestellung 8 Stücke:
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1+299.12 EUR
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