Produkte > BXT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| BXT030N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PDFN56 Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Drain-source voltage: 30V Drain current: 59A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 44.6W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT030N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PDFN56 Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Drain-source voltage: 30V Drain current: 59A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 44.6W | Produkt ist nicht verfügbar | |||||||||||||||
| BXT040N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT040N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXT047N03E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; PDFN33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Case: PDFN33 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT047N03E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; PDFN33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Case: PDFN33 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXT071N04E | BRIDGELUX | BXT071N04E SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| BXT090N06B | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 68A Power dissipation: 4.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT090N06B | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 68A Power dissipation: 4.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXT1000N06M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Mounting: SMD Case: SOT23-3 Drain current: 2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Drain-source voltage: 60V | auf Bestellung 3150 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT1000N06M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Mounting: SMD Case: SOT23-3 Drain current: 2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Drain-source voltage: 60V Anzahl je Verpackung: 10 Stücke | auf Bestellung 3150 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT1150N10D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT1150N10D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXT1150N10J | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 32A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT1150N10J | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 32A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXT1700P06M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Mounting: SMD Polarisation: unipolar Case: SOT23-3 Power dissipation: 1.5W Gate charge: 22nC Drain current: -2.8A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.17Ω Pulsed drain current: -16A | auf Bestellung 6285 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT1700P06M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Mounting: SMD Polarisation: unipolar Case: SOT23-3 Power dissipation: 1.5W Gate charge: 22nC Drain current: -2.8A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.17Ω Pulsed drain current: -16A Anzahl je Verpackung: 5 Stücke | auf Bestellung 6285 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT170N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 200A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT170N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 200A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXT230P03B | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOP8 Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -7A On-state resistance: 34mΩ Type of transistor: P-MOSFET Power dissipation: 3.9W | auf Bestellung 3420 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT230P03B | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOP8 Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -7A On-state resistance: 34mΩ Type of transistor: P-MOSFET Power dissipation: 3.9W Anzahl je Verpackung: 5 Stücke | auf Bestellung 3420 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT270N02M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 44mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1223 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT270N02M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 44mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1223 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT2800N10M | BRIDGELUX | BXT2800N10M SMD N channel transistors | auf Bestellung 5409 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT280N02B | BRIDGELUX | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Case: SOP8 Drain-source voltage: 20V Drain current: 4A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD | auf Bestellung 3060 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT280N02B | BRIDGELUX | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Case: SOP8 Drain-source voltage: 20V Drain current: 4A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD Anzahl je Verpackung: 5 Stücke | auf Bestellung 3060 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT2N7002BK | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 19810 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT2N7002BK | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 19810 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT330N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: TO252 Gate charge: 24.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Drain current: 14A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 27.8W | Produkt ist nicht verfügbar | |||||||||||||||
| BXT330N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: TO252 Gate charge: 24.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Drain current: 14A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 27.8W Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT330N06D Produktcode: 197512 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
| BXT3800P06M | BRIDGELUX | BXT3800P06M SMD P channel transistors | auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT420N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Mounting: SMD Kind of package: reel; tape Gate charge: 2.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Drain-source voltage: 30V Drain current: 2.6A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Case: SOT23-3 Polarisation: unipolar | auf Bestellung 5880 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT420N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Mounting: SMD Kind of package: reel; tape Gate charge: 2.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Drain-source voltage: 30V Drain current: 2.6A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Case: SOT23-3 Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 5880 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT520P02M | BRIDGELUX | BXT520P02M SMD P channel transistors | auf Bestellung 2930 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT55C10-GS08 | VISHAY | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| BXT600P03M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOT23-3 Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16.4A Drain-source voltage: -30V Anzahl je Verpackung: 20 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| BXT600P03M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOT23-3 Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16.4A Drain-source voltage: -30V | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BXT848 | Omron Automation and Safety | Description: DNJ CABLE | Produkt ist nicht verfügbar | |||||||||||||||
| BXT900P06D | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| BXT900P06D | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| BXTM-26747-D53 | Knowles | Description: MIC COND ANALOG OMNI -55.5DB | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| BXTM-26747-D53 | Knowles | Microphones MICROPHONE | Produkt ist nicht verfügbar | |||||||||||||||
| BXTS13A | Intel | Heat Sinks | Produkt ist nicht verfügbar | |||||||||||||||
| BXTS13A 937425 | Intel | Thermal Solution BXTS13A, Retail Box | Produkt ist nicht verfügbar | |||||||||||||||
| BXTS13A 937425 | Intel | Heat Sinks BOXED THERMAL | Produkt ist nicht verfügbar | |||||||||||||||
| BXTS13X | Intel | Heat Sinks | Produkt ist nicht verfügbar | |||||||||||||||
| BXTS15A | Intel | CPU & Chip Coolers Intel Thermal Solution BXTS15A, Retail Box | auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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| BXTSRS1 | Intel | Intel Intel Laminar RS1 Cooler, Bulk | Produkt ist nicht verfügbar |