Produkte > DI1

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DI100N04D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 450A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 63A
Pulsed drain current: 450A
Power dissipation: 69W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI100N04D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 450A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 63A
Pulsed drain current: 450A
Power dissipation: 69W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI100N04D1Diotec SemiconductorDiotec Semiconductor MOSFET, DPAK, 40V, 100A, 150C, N
Produkt ist nicht verfügbar
DI100N04D1-AQDiotec SemiconductorMOSFET MOSFET, DPAK, 40V, 100A, 150C, N, AEC-Q101
Produkt ist nicht verfügbar
DI100N04D1-AQDiotec SemiconductorMOSFET, DPAK, 40V, 100A, N, 69W
Produkt ist nicht verfügbar
DI100N04D1-AQDiotec SemiconductorDescription: MOSFET, DPAK, 40V, 100A, 0, 69W
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Power Dissipation (Max): 69W
Supplier Device Package: TO-252 (DPAK)
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.62 EUR
Mindestbestellmenge: 2500
DI100N04D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 450A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 450A
Power dissipation: 69W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DI100N04D1-AQDiotec SemiconductorDescription: MOSFET, DPAK, 40V, 100A, 0, 69W
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Power Dissipation (Max): 69W
Supplier Device Package: TO-252 (DPAK)
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.2 EUR
100+ 2.49 EUR
500+ 2.11 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
DI100N04D1-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 450A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 450A
Power dissipation: 69W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI100N04PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 100A, 150C, N, AEC-Q101
auf Bestellung 4915 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.24 EUR
16+ 3.3 EUR
100+ 1.99 EUR
500+ 1.97 EUR
1000+ 1.9 EUR
2500+ 1.68 EUR
5000+ 1.58 EUR
Mindestbestellmenge: 13
DI100N10PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 400A; 250W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 400A
Power dissipation: 250W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4836 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
51+ 1.42 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 46
DI100N10PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 100V, 80A, 150C, N
auf Bestellung 3458 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.64 EUR
10+ 5.98 EUR
100+ 3.59 EUR
500+ 3.54 EUR
1000+ 3.43 EUR
2500+ 3.02 EUR
5000+ 2.28 EUR
Mindestbestellmenge: 7
DI100N10PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 400A; 250W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 400A
Power dissipation: 250W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4836 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
51+ 1.42 EUR
66+ 1.09 EUR
70+ 1.03 EUR
Mindestbestellmenge: 46
DI100N10PQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 100V 0.0045OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
DI100N10PQDiotec SemiconductorMOSFET, PowerQFN 5x6, 100V, 100A, 0, 250W
Produkt ist nicht verfügbar
DI100N10PQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 100V 0.0045OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
DI100N10PQ-AQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 100V 0.0045OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
DI100N10PQ-AQDiotec SemiconductorMOSFET, PowerQFN 5x6, 100V, 100A, 0, 250WAutomotive AEC-Q101 qualification
Produkt ist nicht verfügbar
DI100N10PQ-AQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 100V 0.0045OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
DI100N10PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 100V, 80A, 150C, N, AEC-Q101
auf Bestellung 4980 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.39 EUR
10+ 7.36 EUR
100+ 4.39 EUR
500+ 4.34 EUR
1000+ 4.21 EUR
2500+ 3.72 EUR
5000+ 3.51 EUR
Mindestbestellmenge: 6
DI100SPANJIT09+
auf Bestellung 9018 Stücke:
Lieferzeit 21-28 Tag (e)
DI100SPANJIT
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
DI100S_R2_00001PanjitBridge Rectifiers PEC/DI100S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI100S_T0_00001PanjitBridge Rectifiers PEC/DI100S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI1010SPANJIT08+ TQFP68
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
DI1010ST/PPanjitДиодный мост SDIP-4 U=1000V I=1A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+0.56 EUR
10+ 0.52 EUR
DI1010S_R2_00001PanJit SemiconductorDI1010S-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
DI1010S_R2_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Produkt ist nicht verfügbar
DI1010S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Produkt ist nicht verfügbar
DI1010S_T0_00001PanJit SemiconductorCategory: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Case: SDIP 4L
Kind of package: tube
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 30A
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
165+0.43 EUR
Mindestbestellmenge: 165
DI1010S_T0_00001PanJit SemiconductorCategory: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Case: SDIP 4L
Kind of package: tube
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 30A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)
165+0.43 EUR
335+ 0.21 EUR
Mindestbestellmenge: 165
DI1010_T0_00001Panjit International Inc.Description: DIP, GENERAL
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SDIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
50+ 0.88 EUR
100+ 0.55 EUR
Mindestbestellmenge: 22
DI1010_T0_00001PanjitBridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Produkt ist nicht verfügbar
DI101S_R2_00001PanjitBridge Rectifiers PEC/DI101S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI101S_T0_00001PanjitBridge Rectifiers PEC/DI101S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI102S_R2_00001PanjitBridge Rectifiers PEC/DI102S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI102S_T0_00001PanjitBridge Rectifiers PEC/DI102S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI102_T0_00001PanjitBridge Rectifiers PEC/DI102/TP//HF/0.05K/DIP/GPP/BRIDGE/LGDI-10H/DI10-QI27/PJ///
Produkt ist nicht verfügbar
DI1040-3000 (84200411-Bopla)
Produktcode: 81588		BoplaGehäuse, Halter, Montage- und Installationselemente > Gehäuse
Beschreibung: Verdichter
Reihe, Typ, Gruppe: Корпусні елемети
Farbe: rot
Abmessungen, LхBхH: 109x45mm
auf Bestellung 20 Stück:
Lieferzeit 21-28 Tag (e)
1+0.25 EUR
10+ 0.19 EUR
DI104S_R2_00001PanjitBridge Rectifiers PEC/DI104S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI104S_T0_00001PanjitBridge Rectifiers PEC/DI104S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-10SH/DI10S-QI17/PJ///
Produkt ist nicht verfügbar
DI105N04PQ-AQDiotec SemiconductorMOSFET, PowerQFN 5x6, 40V, 110A, 0, 56W Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
DI105N04PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 520A; 83W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 520A
Power dissipation: 83W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DI105N04PQ-AQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 40V 0.0026OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3033 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.24 EUR
15+ 1.82 EUR
100+ 1.42 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
2000+ 0.92 EUR
Mindestbestellmenge: 12
DI105N04PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 520A; 83W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 520A
Power dissipation: 83W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI105N04PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101
auf Bestellung 4489 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.69 EUR
19+ 2.89 EUR
100+ 1.73 EUR
500+ 1.72 EUR
1000+ 1.66 EUR
2500+ 1.47 EUR
5000+ 1.1 EUR
Mindestbestellmenge: 15
DI105N04PQ-AQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 40V 0.0026OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3033 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.88 EUR
Mindestbestellmenge: 5000
DI106PanJitДіодний міст вивідний; Uзвор, В = 600; Ir = 5 мкА; If, A = 1; Uf, В = 1,1; Тексп, °С = -55...+150; Тип мосту = однофазний; DIP-4
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+3.35 EUR
10+ 0.62 EUR
100+ 0.22 EUR
Mindestbestellmenge: 2
DI106S R2 00001PanjitBridge Rectifiers PAN-JIT AMERICAS
Produkt ist nicht verfügbar
DI106S-R2-00001PanjitBridge Rectifiers
Produkt ist nicht verfügbar
DI106S_R2_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Produkt ist nicht verfügbar
DI106S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Produkt ist nicht verfügbar
DI106_T0_00001PanjitBridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
auf Bestellung 19 Stücke:
Lieferzeit 14-28 Tag (e)
55+0.96 EUR
68+ 0.77 EUR
100+ 0.53 EUR
500+ 0.4 EUR
1000+ 0.29 EUR
2500+ 0.27 EUR
5000+ 0.25 EUR
Mindestbestellmenge: 55
DI106_T0_00001PanJit SemiconductorCategory: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DIP4
Case: DIP4
Max. off-state voltage: 0.6kV
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Load current: 1A
Max. forward voltage: 1.1V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DI106_T0_00001PanJit SemiconductorCategory: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DIP4
Case: DIP4
Max. off-state voltage: 0.6kV
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Load current: 1A
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
DI108 _T0 _10001PanJitДіодний міст вивідний; Uзвор, В = 800; Ir = 5 мкА; If, A = 1; Uf, В = 1,1; Тексп, °С = -55...+150; Тип мосту = однофазний; DIP-4
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
16+0.44 EUR
18+ 0.36 EUR
100+ 0.3 EUR
Mindestbestellmenge: 16
DI108-T0-00001PanjitPanjit
Produkt ist nicht verfügbar
DI108S-R2-00001PanjitPanjit SDIP/GPP/BRIDGE/LGDI-10SH
Produkt ist nicht verfügbar
DI108S-T0-00001PanjitPanjit SDIP/GPP/BRIDGE/LGDI-10SH
Produkt ist nicht verfügbar
DI108S_R2_00001Panjit International Inc.Description: SURFACE MOUNT GLASS PASSIVATED S
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
DI108S_R2_00001Panjit International Inc.Description: SURFACE MOUNT GLASS PASSIVATED S
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1234 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
30+ 0.87 EUR
100+ 0.52 EUR
500+ 0.49 EUR
Mindestbestellmenge: 24
DI108S_R2_00001PanJit SemiconductorDI108S-R2 SMD/THT sing. phase diode bridge rectif.
Produkt ist nicht verfügbar
DI108S_R2_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER 800V 1A SDIP
auf Bestellung 5803 Stücke:
Lieferzeit 14-28 Tag (e)
45+1.16 EUR
59+ 0.89 EUR
100+ 0.54 EUR
500+ 0.5 EUR
1000+ 0.34 EUR
1500+ 0.31 EUR
9000+ 0.27 EUR
Mindestbestellmenge: 45
DI108S_T0_00001Panjit International Inc.Description: SURFACE MOUNT GLASS PASSIVATED S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
50+ 0.84 EUR
Mindestbestellmenge: 24
DI108S_T0_00001PanJit SemiconductorCategory: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DI108S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER 800V 1A SDIP
Produkt ist nicht verfügbar
DI108S_T0_00001PanJit SemiconductorCategory: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DI108_T0_00001PanjitBridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTITFIER
Produkt ist nicht verfügbar
DI108_T0_00001Panjit International Inc.Description: DIP, GENERAL
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 27 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
Mindestbestellmenge: 24
DI110N03PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 74A; Idm: 92A; 56W; QFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 56W
Pulsed drain current: 92A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 74A
On-state resistance: 2.65mΩ
Gate charge: 14nC
Case: QFN5x6
Produkt ist nicht verfügbar
DI110N03PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 74A; Idm: 92A; 56W; QFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 56W
Pulsed drain current: 92A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 74A
On-state resistance: 2.65mΩ
Gate charge: 14nC
Case: QFN5x6
Produkt ist nicht verfügbar
DI110N03PQDiotec SemiconductorDescription: MOSFET, 30V, 110A, 56W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7462 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
1250+5.56 EUR
2500+ 3.5 EUR
5000+ 2.41 EUR
Mindestbestellmenge: 1250
DI110N03PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N
Produkt ist nicht verfügbar
DI110N03PQ-AQDiotec SemiconductorDiotec Semiconductor MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N, AEC-Q101
Produkt ist nicht verfügbar
DI110N03PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 35W
Pulsed drain current: 420A
Gate-source voltage: ±20V
Application: automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 2.5mΩ
Gate charge: 163nC
Case: QFN5x6
Produkt ist nicht verfügbar
DI110N03PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 35W
Pulsed drain current: 420A
Gate-source voltage: ±20V
Application: automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 2.5mΩ
Gate charge: 163nC
Case: QFN5x6
Produkt ist nicht verfügbar
DI110N03PQ-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 30V, 110A,
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+3.22 EUR
Mindestbestellmenge: 5000
DI110N04PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 42W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI110N04PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 42W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI110N04PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Produkt ist nicht verfügbar
DI110N04PQDiotec SemiconductorMOSFET, PowerQFN 5x6, 40V, 110A, 0, 42W
Produkt ist nicht verfügbar
DI110N04PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N
Produkt ist nicht verfügbar
DI110N04PQ-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 110A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4842 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.26 EUR
15+ 1.85 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 0.99 EUR
2000+ 0.93 EUR
Mindestbestellmenge: 12
DI110N04PQ-AQDiotec SemiconductorN-Channel Power MOSFET
Produkt ist nicht verfügbar
DI110N04PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N, AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.74 EUR
18+ 2.94 EUR
100+ 1.76 EUR
500+ 1.74 EUR
1000+ 1.68 EUR
2500+ 1.49 EUR
5000+ 1.4 EUR
Mindestbestellmenge: 14
DI110N04PQ-AQDiotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 110A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DI110N04PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 42W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI110N04PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 42W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DI110N06D1Diotec SemiconductorMOSFET MOSFET, DPAK, 65V, 110A, 150C, N
Produkt ist nicht verfügbar
DI110N06D1Diotec Semiconductor AGDescription: MOSFET, DPAK, N, 65V, 110A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V
Produkt ist nicht verfügbar
DI110N06D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 70A; Idm: 550A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 70A
Pulsed drain current: 550A
Power dissipation: 71W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI110N06D1DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 70A; Idm: 550A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 70A
Pulsed drain current: 550A
Power dissipation: 71W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI110N06D1-AQDiotec SemiconductorN-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification
Produkt ist nicht verfügbar
DI110N06D2Diotec SemiconductorMOSFET MOSFET, D2PAK, 60V, 110A, 150C, N
auf Bestellung 800 Stücke:
Lieferzeit 14-28 Tag (e)
9+5.85 EUR
10+ 5.72 EUR
25+ 5.38 EUR
100+ 4.39 EUR
500+ 3.48 EUR
800+ 3.28 EUR
Mindestbestellmenge: 9
DI110N06D2Diotec Semiconductor AGDescription: MOSFET, D2PAK, N, 60V, 110A
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
Produkt ist nicht verfügbar
DI110N06D2DIOTEC SEMICONDUCTORDI110N06D2-DIO SMD N channel transistors
Produkt ist nicht verfügbar
DI110N15PQDiotec SemiconductorDescription: MOSFET N-CH 150V 110A 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
DI110N15PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 56W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 56W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI110N15PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N
Produkt ist nicht verfügbar
DI110N15PQDiotec SemiconductorMOSFET, PowerQFN 5x6, 150V, 110A, 0, 56W
Produkt ist nicht verfügbar
DI110N15PQDiotec SemiconductorDescription: MOSFET, 150V, 110A, 56W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 75 V
Produkt ist nicht verfügbar
DI110N15PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 56W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 56W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI110N15PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI110N15PQ-AQDiotec SemiconductorDescription: MOSFET, PowerQFN 5x6, 150V, 110A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 75 V
Produkt ist nicht verfügbar
DI110N15PQ-AQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DI110N15PQ-AQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N, AEC-Q101
Produkt ist nicht verfügbar
DI110N15PQ-QDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DI110N15PQ-QDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI114N06PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 63.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V
Produkt ist nicht verfügbar
DI114N06PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72.5A
Pulsed drain current: 480A
Power dissipation: 63.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI114N06PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72.5A
Pulsed drain current: 480A
Power dissipation: 63.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI13001Diotec SemiconductorBipolar Transistors - BJT BJT, SOT-23, 700V, 250mA, NPN
auf Bestellung 2858 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
70+ 0.74 EUR
101+ 0.52 EUR
500+ 0.46 EUR
1000+ 0.42 EUR
3000+ 0.31 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 50
DI13001DIOTEC SEMICONDUCTORCategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; 700V; 0.25A; 0.8W; SOT23
Polarisation: bipolar
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Collector-emitter voltage: 700V
Current gain: 10...40
Collector current: 0.25A
Type of transistor: NPN
Power dissipation: 0.8W
Produkt ist nicht verfügbar
DI13001Diotec SemiconductorTrans GP BJT NPN 450V 0.25A 800mW T/R
Produkt ist nicht verfügbar
DI13001Diotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
DI13001DIOTEC SEMICONDUCTORCategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; 700V; 0.25A; 0.8W; SOT23
Polarisation: bipolar
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Collector-emitter voltage: 700V
Current gain: 10...40
Collector current: 0.25A
Type of transistor: NPN
Power dissipation: 0.8W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DI150N03PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 30V, 150A, 150C, N
Produkt ist nicht verfügbar
DI150N03PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 350A; 80W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 350A
Power dissipation: 80W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 1607nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DI150N03PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V
Produkt ist nicht verfügbar
DI150N03PQDIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 350A; 80W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 350A
Power dissipation: 80W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 1607nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DI150N04PQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 40V 0.0014OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DI150N04PQDiotec SemiconductorMOSFET MOSFET, PowerQFN 5x6, 40V, 150A, 150C, N
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
7+8.09 EUR
10+ 6.32 EUR
100+ 3.77 EUR
500+ 3.74 EUR
1000+ 3.64 EUR
2500+ 3.2 EUR
5000+ 3.02 EUR
Mindestbestellmenge: 7
DI150N04PQDiotec SemiconductorDescription: MOSFET PWRQFN 5X6 40V 0.0014OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DI150S_R2_00001PanjitBridge Rectifiers PEC/DI150S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-15SH/DI15S-QI07/PJ///
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DI150S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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DI1510S
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
DI1510S-R2-00001PanjitBridge Rectifiers
Produkt ist nicht verfügbar
DI1510S_R2_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
auf Bestellung 142 Stücke:
Lieferzeit 14-28 Tag (e)
47+1.11 EUR
56+ 0.94 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
1500+ 0.37 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 47
DI1510S_R2_00001PanJit SemiconductorDI1510S-R2 SMD/THT sing. phase diode bridge rectif.
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DI1510S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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DI1510_T0_00001Panjit International Inc.Description: DIP, GENERAL
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 305 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.92 EUR
100+ 0.64 EUR
Mindestbestellmenge: 25
DI1510_T0_00001PanjitBridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
48+1.09 EUR
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500+ 0.51 EUR
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2500+ 0.35 EUR
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Mindestbestellmenge: 48
DI151S_R2_00001PanjitBridge Rectifiers PEC/DI151S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-15SH/DI15S-QI07/PJ///
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DI151S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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DI152S_R2_00001PanjitBridge Rectifiers PEC/DI152S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-15SH/DI15S-QI07/PJ///
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DI154SPANJIT09+ sop
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
DI154S-LPANJIT0829+
auf Bestellung 542 Stücke:
Lieferzeit 21-28 Tag (e)
DI154S-LPANJIT08+ SOP
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
DI154S_R2_00001PanjitBridge Rectifiers Surface Mount Glass Passivated Single-Phase Bridge Rectifier
auf Bestellung 980 Stücke:
Lieferzeit 14-28 Tag (e)
52+1.02 EUR
61+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
1500+ 0.34 EUR
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Mindestbestellmenge: 52
DI154S_R2_00001PanJit SemiconductorDI154S-R2 SMD/THT sing. phase diode bridge rectif.
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DI154_T0_00001PanjitBridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTITFIER
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DI15530-9HARRISDIP
auf Bestellung 106 Stücke:
Lieferzeit 21-28 Tag (e)
DI156PanJitДіодний міст вивідний; Uзвор, В = 600; Ir = 5 мкА; If, A = 1,5; Uf, В = 1,1; Тексп, °С = -55...+125; Тип мосту = однофазний; DIP-4
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+2.23 EUR
10+ 0.62 EUR
100+ 0.29 EUR
Mindestbestellmenge: 3
DI156S-AU_R2_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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DI156S_R2_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
auf Bestellung 724 Stücke:
Lieferzeit 14-28 Tag (e)
52+1.02 EUR
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500+ 0.47 EUR
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1500+ 0.34 EUR
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Mindestbestellmenge: 52
DI156S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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DI158S_R2_00001PanJit SemiconductorDI158S-R2 SMD/THT sing. phase diode bridge rectif.
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DI158S_T0_00001PanjitBridge Rectifiers SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
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DI158_T0_00001PanjitBridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTITFIER
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DI170N03PQDiotec SemiconductorDescription: IC
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
Produkt ist nicht verfügbar