Produkte > UJ4
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| UJ40-C-H-G-L1-SMT-TR | CUI Devices | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Horizontal Gold Flash Surface Mount USB | auf Bestellung 1399 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-L1-SMT-TR | CUI DEVICES | Conn USB 4.0 Type C RCP 24 POS 0.25mm Solder RA SMD 24 Terminal 1 Port T/R | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ40-C-H-G-L1-SMT-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Cut Tape (CT) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Right Angle; Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Horizontal, Mid Mount Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-L1-SMT-TR | Same Sky | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Horizontal Gold Flash Surface Mount USB | auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-L1-SMT-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Tape & Reel (TR) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Right Angle; Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Horizontal, Mid Mount Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-2-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Tape & Reel (TR) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Board Edge, Cutout; Surface Mount; Through Hole, Right Angle Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Horizontal, Mid Mount Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-2-TR | CUI Devices | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Horizontal Gold Flash Mid Mount SMT USB | auf Bestellung 4342 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-2-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Cut Tape (CT) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Board Edge, Cutout; Surface Mount; Through Hole, Right Angle Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Horizontal, Mid Mount Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 2051 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-2-TR | CUI DEVICES | Conn USB 4.0 Type C RCP 24 POS 0.25mm Solder RA SMD 24 Terminal 1 Port T/R | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ40-C-H-G-MSMT-2-TR | Same Sky | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Horizontal Gold Flash Mid Mount SMT USB | auf Bestellung 4327 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-TR | Same Sky | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Horizontal Gold Flash Mid Mount SMT USB | auf Bestellung 1237 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Tape & Reel (TR) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Board Edge, Cutout; Surface Mount; Through Hole, Right Angle Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Horizontal, Mid Mount Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-TR | CUI DEVICES | Conn USB 4.0 Type C RCP 24 POS 0.5mm/(0.45mm/0.8)mm Solder RA SMD/Thru-Hole 24 Terminal 1 Port T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ40-C-H-G-MSMT-TR | CUI Devices | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Horizontal Gold Flash Mid Mount SMT USB | auf Bestellung 689 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-MSMT-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Cut Tape (CT) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Board Edge, Cutout; Surface Mount; Through Hole, Right Angle Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Horizontal, Mid Mount Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 1256 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-SMT-P24-TR | Same Sky | USB Connectors Type C, 4.0, Horizontal, Gold Plated 3u, Surface Mount, 24 pin, T&R | auf Bestellung 659 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-SMT-P24-TR | CUI Devices | USB Connectors Type C, 4.0, Horizontal, Gold Plated 3u, Surface Mount, 24 pin, T&R | auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-H-G-SMT-TR | CUI DEVICES | UJ40-C-H-G-SMT-TR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ40-C-MSMT-TR-68 | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 20 VDC, 5 Packaging: Cut Tape (CT) Voltage - Rated: 20VDC Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Right Angle; Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Ingress Protection: IP68 - Dust Tight, Waterproof Mounting Feature: Horizontal Mating Cycles: 10000 Number of Ports: 1 | auf Bestellung 1884 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-MSMT-TR-68 | Same Sky | USB Connectors | auf Bestellung 2797 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-MSMT-TR-68 | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 20 VDC, 5 Packaging: Tape & Reel (TR) Voltage - Rated: 20VDC Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Right Angle; Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Ingress Protection: IP68 - Dust Tight, Waterproof Mounting Feature: Horizontal Mating Cycles: 10000 Number of Ports: 1 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-MSMT-TR-68 | CUI Devices | USB Connectors | auf Bestellung 2860 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-G-SMT-TR | CUI Devices | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Vertical Gold Flash Surface Mount USB | auf Bestellung 1639 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-G-SMT-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Cut Tape (CT) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Vertical Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 2408 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-G-SMT-TR | Same Sky | USB Connectors Type C USB4 40 Gbps 48 Vac 5 A Vertical Gold Flash Surface Mount USB | auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-G-SMT-TR | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 48 VAC, 5 Packaging: Tape & Reel (TR) Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Mounting Feature: Vertical Mating Cycles: 10000 Part Status: Active Number of Ports: 1 | auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-G-SMT-TR | CUI DEVICES | UJ40-C-V-G-SMT-TR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ40-C-V-SMT-TR-68 | CUI Devices | USB Connectors | auf Bestellung 4482 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-SMT-TR-68 | CUI DEVICES | USB TypeC Receptacle | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ40-C-V-SMT-TR-68 | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 20 VDC, 5 Packaging: Cut Tape (CT) Voltage - Rated: 20VDC Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Ingress Protection: IP68 - Dust Tight, Waterproof Mounting Feature: Vertical Mating Cycles: 10000 Number of Ports: 1 | auf Bestellung 2867 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-SMT-TR-68 | Same Sky (Formerly CUI Devices) | Description: TYPE C, USB4, 40 GBPS, 20 VDC, 5 Packaging: Tape & Reel (TR) Voltage - Rated: 20VDC Number of Contacts: 24 Connector Type: USB-C (USB TYPE-C) Gender: Receptacle Current Rating (Amps): 0.25A, 1.25A, 5A Mounting Type: Surface Mount, Through Hole Shielding: Shielded Operating Temperature: -40°C ~ 85°C Specifications: USB 4.0 Termination: Solder Ingress Protection: IP68 - Dust Tight, Waterproof Mounting Feature: Vertical Mating Cycles: 10000 Number of Ports: 1 | auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ40-C-V-SMT-TR-68 | Same Sky | USB Connectors USB Jack, Type C, 4.0, Vertical, IP68, T&R | auf Bestellung 4073 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ46 | auf Bestellung 797 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| UJ460121 | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| UJ460275 | auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| UJ460291 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| UJ460372 | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| UJ460387B | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| UJ4B | Switchcraft Inc. | Description: CONN JACK STEREO 4.39MM PNL MNT Packaging: Bulk Features: Mounting Hardware, Thread Lock Connector Type: Phone Jack Gender: Female Mounting Type: Panel Mount Shielding: Unshielded Number of Positions/Contacts: 3 Conductors, 5 Contacts Internal Switch(s): Two Switches Signal Lines: Stereo (3 Conductor, TRS) Termination: Solder Eyelet(s) Actual Diameter: 0.177" (4.48mm) Industry Recognized Mating Diameter: 4.39mm (0.173") Part Status: Active | auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4B | Switchcraft | Conn Phone Jack F 3 POS Solder ST Panel Mount 3 Terminal 1 Port | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4B | Switchcraft | Conn Phone Jack F 3 POS Solder ST Panel Mount 3 Terminal 1 Port | auf Bestellung 692 Stücke: Lieferzeit 14-21 Tag (e) |
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| UJ4B | Switchcraft | Conn Phone Jack F 3 POS Solder ST Panel Mount 3 Terminal 1 Port | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075018K3S | QORVO | Description: QORVO - UJ4C075018K3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 81 A, 750 V, 18 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 81A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 385W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 18mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 301 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075018K3S | onsemi | SiC MOSFETs 750V/18MOSICFETG4TO247-3 | auf Bestellung 303 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075018K3S | Qorvo | SiC MOSFETs 750V/18mO,SICFET,G4,TO247-3 | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075018K3S | United Silicon Carbide | UJ4C075018K3S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075018K3S | onsemi | Description: SICFET N-CH 750V 81A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V | auf Bestellung 5111 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075018K4S | United Silicon Carbide | UJ4C075018K4S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075018K4S | onsemi | Description: SICFET N-CH 750V 81A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075018K4S | Qorvo | SiC MOSFETs 750V/18mO,SICFET,G4,TO247-4 | auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075018K4S | ONSEMI | Description: ONSEMI - UJ4C075018K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 81 A, 750 V, 18 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 81A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 385W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 18mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075018K4S | Qorvo / UnitedSiC | JFET 750V/18mOhm, N-Off SiC CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 815 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075018K4S | onsemi | SiC MOSFETs 750V/18MOSICFETG4TO247-4 | auf Bestellung 782 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023B7S | onsemi | SiC MOSFETs 750V/23MOSICFETG4TO263-7 | auf Bestellung 812 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023B7S | QORVO | Description: QORVO - UJ4C075023B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 64 A, 750 V, 23 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 278W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 23mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 543 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023B7S | Qorvo | SiC MOSFETs 750V/23mO,SICFET,G4,TO263-7 | auf Bestellung 206 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023B7S | Qorvo | Description: 750V/23MOHM, N-OFF SIC CASCODE, Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023B7S | United Silicon Carbide | UJ4C075023B7S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023B7S | Qorvo | Description: 750V/23MOHM, N-OFF SIC CASCODE, Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023K3S | onsemi | Description: 750V/23MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023K3S | Qorvo / UnitedSiC | JFET 750V/23mOhm, N-Off SiC CASCODE, G4, TO-247-3L, REDUCED RTH | auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023K3S | United Silicon Carbide | UJ4C075023K3S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023K3S | Qorvo | SiC MOSFETs 750V/23mO,SICFET,G4,TO247-3 | auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023K3S | QORVO | Description: QORVO - UJ4C075023K3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 66 A, 750 V, 23 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 66A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 306W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 23mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023K4S | Qorvo / UnitedSiC | JFET 750V/23mOhm, N-Off SiC CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 2088 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023K4S | ONSEMI | Description: ONSEMI - UJ4C075023K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 66 A, 750 V, 23 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 66A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 306W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 23mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 357 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023K4S | onsemi | Description: 750V/23MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 1133 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023K4S | Qorvo | SiC MOSFETs 750V/23mO,SICFET,G4,TO247-4 | auf Bestellung 933 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023K4S | United Silicon Carbide | UJ4C075023K4S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023K4S | onsemi | SiC MOSFETs 750V/23MOSICFETG4TO247-4 | auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023L8S | Qorvo | Description: 750V/23MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023L8S | Qorvo | SiC MOSFETs UJ4C075023L8S | auf Bestellung 1412 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075023L8SSB | Qorvo | Description: 750V/23MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075023L8SSR | Qorvo | Description: 750V/23MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033B7S | Qorvo | MOSFETs 750V/33mOhms,SICFET,G4,TO263-7 | auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033B7S | onsemi | Description: 750V/33MOHM, N-OFF SIC CASCODE, Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 511 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033B7S | onsemi | Description: 750V/33MOHM, N-OFF SIC CASCODE, Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033K3S | ONSEMI | Description: ONSEMI - UJ4C075033K3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 750 V, 33 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 242W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 33mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033K3S | onsemi | Description: 750V/33MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 793 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K3S | Qorvo | SiC MOSFETs 750V/33mO,SICFET,G4,TO247-3 | auf Bestellung 1959 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K3S | United Silicon Carbide | UJ4C075033K3S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033K3S | onsemi | SiC MOSFETs 750V/33MOSICFETG4TO247-3 | auf Bestellung 543 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K3S | UnitedSiC | JFET 750V/33mOhm, N-Off SiC CASCODE, G4, TO-247-3L, REDUCED RTH | auf Bestellung 1015 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K3S | Qorvo / UnitedSiC | JFET 750V/33mOhm, N-Off SiC CASCODE, G4, TO-247-3L, REDUCED RTH | auf Bestellung 2268 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K4S | United Silicon Carbide | UJ4C075033K4S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033K4S | Qorvo | SiC MOSFETs 750V/33mO,SICFET,G4,TO247-4 | auf Bestellung 2479 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K4S | ONSEMI | Description: ONSEMI - UJ4C075033K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 750 V, 33 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 242W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 33mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1071 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033K4S | Qorvo / UnitedSiC | JFET 750V/33mOhm, N-Off SiC CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033K4S | onsemi | Description: 750V/33MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033L8S | Qorvo | SiC MOSFETs UJ4C075033L8S | auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033L8S | Qorvo | Description: 750V/33MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033L8S | onsemi | SiC MOSFETs 750V/33MOSICFETG4TOLL | auf Bestellung 2823 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075033L8SSB | Qorvo | Description: 750V/33MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tj) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075033L8SSR | Qorvo | Description: 750V/33MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tj) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044B7S | Qorvo | MOSFET 750V/44mO,SICFET,G4,TO263-7 | auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044B7S | Qorvo | Description: 750V/44MOHM, N-OFF SIC CASCODE, Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044B7S | Qorvo / UnitedSiC | JFET | auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044B7S | onsemi | SiC MOSFETs 750V/44MOSICFETG4TO263-7 | auf Bestellung 778 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044B7S | Qorvo | Description: 750V/44MOHM, N-OFF SIC CASCODE, Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 3155 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044K3S | QORVO | Description: QORVO - UJ4C075044K3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 37.4 A, 750 V, 44 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 37.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 203W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 44mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 436 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044K3S | Qorvo / UnitedSiC | JFET 750V/44mOhm, N-Off SiC CASCODE, G4, TO-247-3L, REDUCED RTH | auf Bestellung 637 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044K3S | onsemi | Description: 750V/44MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.4A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 203W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 660 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044K3S | onsemi | SiC MOSFETs 750V/44MOSICFETG4TO247-3 | auf Bestellung 583 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044K3S | United Silicon Carbide | UJ4C075044K3S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044K3S | Qorvo | SiC MOSFETs 750V/44mO,SICFET,G4,TO247-3 | auf Bestellung 589 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044K4S | Qorvo | SiC MOSFETs 750V/44mO,SICFET,G4,TO247-4 | auf Bestellung 1593 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044K4S | United Silicon Carbide | UJ4C075044K4S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044K4S | ONSEMI | Description: ONSEMI - UJ4C075044K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 37.4 A, 750 V, 44 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 37.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 203W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 44mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044K4S | onsemi | Description: 750V/44MOHM, SIC, CASCODE, G4, T Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.4A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 203W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044L8S | Qorvo | Description: 750V/44MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044L8S | Qorvo | SiC MOSFETs UJ4C075044L8S | auf Bestellung 1117 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075044L8SSB | Qorvo | Description: 750V/44MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075044L8SSR | Qorvo | Description: 750V/44MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060B7S | Qorvo | SiC MOSFETs 750V/60mOhms,SICFET,G4,TO263-7 | auf Bestellung 1185 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060B7S | onsemi | Description: 750V/60MOHM, N-OFF SIC CASCODE, Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060B7S | ONSEMI | Description: ONSEMI - UJ4C075060B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 25.8 A, 750 V, 58 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 25.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 128W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 58mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060B7S | onsemi | SiC MOSFETs 750V/60MOSICFETG4TO263-7 | auf Bestellung 1109 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060B7S | onsemi | Description: 750V/60MOHM, N-OFF SIC CASCODE, Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V | auf Bestellung 532 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060K3S | onsemi | SiC MOSFETs 750V/60MOSICFETG4TO247-3 | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060K3S | Qorvo | SiC MOSFETs 750V/60mO,SICFET,G4,TO247-3 | auf Bestellung 2618 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060K3S | onsemi | Description: SICFET N-CH 750V 28A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V | auf Bestellung 14453 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060K3S | United Silicon Carbide | UJ4C075060K3S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060K3S | ONSEMI | Description: ONSEMI - UJ4C075060K3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 28 A, 750 V, 58 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 155W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 58mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060K4S | onsemi | Description: SICFET N-CH 750V 28A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V | auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060K4S | onsemi | SiC MOSFETs 750V/60MOSICFETG4TO247-4 | auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060K4S | United Silicon Carbide | UJ4C075060K4S | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060K4S | ONSEMI | Description: ONSEMI - UJ4C075060K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 28 A, 750 V, 58 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 155W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 58mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 598 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060K4S | Qorvo | SiC MOSFETs 750V/60mO,SICFET,G4,TO247-4 | auf Bestellung 544 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060L8S | Qorvo | Description: 750V/60MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060L8S | Qorvo | SiC MOSFETs UJ4C075060L8S | auf Bestellung 1698 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4C075060L8SSB | Qorvo | Description: 750V/60MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4C075060L8SSR | Qorvo | Description: 750V/60MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4N075004L8S | onsemi | JFETs UJ4N075004L8S | auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4N075004L8S | Qorvo | JFETs 750V/4mO, G4, N-On JFET in TOLL | auf Bestellung 598 Stücke: Lieferzeit 318-322 Tag (e) |
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| UJ4N075005K4S | onsemi | JFETs UJ4N075005K4S | auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075005L8S | onsemi | Description: SICFET N-CH 750V 120A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V Power Dissipation (Max): 1153W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V | auf Bestellung 787 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075005L8S | Qorvo | SiC MOSFETs UJ4SC075005L8S | auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075005L8S | onsemi | Description: SICFET N-CH 750V 120A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V Power Dissipation (Max): 1153W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075006K4S | ONSEMI | Description: ONSEMI - UJ4SC075006K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 120 A, 750 V, 5.9 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 714W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 5.9mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075006K4S | Qorvo | SiC MOSFETs 750V/6mO,SICFET,G4,TO247-4 | auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075006K4S | onsemi | SiC MOSFETs 750V/6MOSICFETG4TO247-4 | auf Bestellung 649 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075006K4S | onsemi | Description: 750V/6MOHM, SIC, STACKED CASCODE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V | auf Bestellung 606 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075006K4S | UnitedSiC | JFET 750V/6mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075006K4S | Qorvo / UnitedSiC | JFET 750V/6mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 656 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075008L8S | Qorvo / UnitedSiC | MOSFET 750V/8mO,SICFET,G4,TOLL | auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075008L8S | Qorvo | Description: SICFET N-CH 750V 106A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 70A, 12V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075008L8S | onsemi | SiC MOSFETs 750V/8MOSICFETG4TOLL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075008L8S | Qorvo | SiC MOSFETs 750V/8mOhms,SICFET,G4,TOLL | auf Bestellung 1879 Stücke: Lieferzeit 318-322 Tag (e) |
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| UJ4SC075008L8S | Qorvo | Description: SICFET N-CH 750V 106A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 70A, 12V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V | auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009B7S | United Silicon Carbide | Trans MOSFET N-CH SiC 750V 106A 8-Pin(7+Tab) D2PAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075009B7S | onsemi | Description: 750V/9MOHM, N-OFF SIC STACK CASC Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009B7S | Qorvo / UnitedSiC | JFET | auf Bestellung 1071 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009B7S | onsemi | Description: 750V/9MOHM, N-OFF SIC STACK CASC Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009B7S | Qorvo | SiC MOSFETs 750V/9mO,SICFET,G4,TO263-7 | auf Bestellung 1039 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009B7S | onsemi | SiC MOSFETs 750V/9MOSICFETG4TO263-7 | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009B7S | QORVO | Description: QORVO - UJ4SC075009B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 106 A, 750 V, 9 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 106A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 375W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075009B7S | UnitedSiC | JFET | auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009K4S | Qorvo | SiC MOSFETs 750V/9mO,SICFET,G4,TO247-4 | auf Bestellung 208 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009K4S | ONSEMI | Description: ONSEMI - UJ4SC075009K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 106 A, 750 V, 9 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 106A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075009K4S | onsemi | Description: 750V/9MOHM, SIC, STACKED CASCODE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075009K4S | Qorvo / UnitedSiC | JFET 750V/9mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 474 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075010L8S | Qorvo | Description: 750V/10MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V FET Feature: Depletion Mode Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075010L8SSB | Qorvo | Description: 750V/10MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V FET Feature: Depletion Mode Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075010L8SSR | Qorvo | Description: 750V/10MO,SICFET,G4,TOLL Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V FET Feature: Depletion Mode Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075011B7S | Qorvo / UnitedSiC | JFET | auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075011B7S | Qorvo | SiC MOSFETs 750V/11mO,SICFET,G4,TO263-7 | auf Bestellung 690 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075011B7S | onsemi | Description: 750V/11MOHM, N-OFF SIC STACK CAS Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V | auf Bestellung 670 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075011B7S | QORVO | Description: QORVO - UJ4SC075011B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 104 A, 750 V, 11 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 357W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 11mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075011B7S | onsemi | Description: 750V/11MOHM, N-OFF SIC STACK CAS Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075011K4S | onsemi | Description: 750V/11MOHM, SIC, STACKED CASCOD Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V | auf Bestellung 917 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075011K4S | Qorvo / UnitedSiC | JFET 750V/11mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075011K4S | onsemi | SiC MOSFETs 750V/11MOSICFETG4TO247-4 | auf Bestellung 527 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075011K4S | ONSEMI | Description: ONSEMI - UJ4SC075011K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 104 A, 750 V, 11 mohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 357W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 11mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075011K4S | UnitedSiC | JFET 750V/11mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH | auf Bestellung 868 Stücke: Lieferzeit 415-419 Tag (e) |
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| UJ4SC075011K4S | Qorvo | SiC MOSFETs 750V/11mO,SICFET,G4,TO247-4 | auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075018B7S | onsemi | SiC MOSFETs 750V/18mO,SICFET,G4,TO263-7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075018B7S | QORVO | Description: QORVO - UJ4SC075018B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 72 A, 750 V, 18 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 72A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 259W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 18mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 515 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075018B7S | onsemi | Description: 750V/18MOHM, N-OFF SIC STACK CAS Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V | auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075018B7S | onsemi | Description: 750V/18MOHM, N-OFF SIC STACK CAS Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075018L8S | onsemi | SiC MOSFETs UJ4SC075018L8S | auf Bestellung 2000 Stücke: Lieferzeit 318-322 Tag (e) |
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| UJ4SC075018L8S | Qorvo | Description: SICFET N-CH 750V 53A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V | auf Bestellung 853 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075018L8S | Qorvo | MOSFET 750V/18mO,SICFET,G4,TOLL | auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ4SC075018L8S | QORVO | Description: QORVO - UJ4SC075018L8S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 53 A, 750 V, 18 mohm, MO-299 tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 53A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 349W Bauform - Transistor: MO-299 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 18mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 510 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| UJ4SC075018L8S | Qorvo | Description: SICFET N-CH 750V 53A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |