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74VHC245D,118 74VHC245D,118 NEXPERIA 74VHC_VHCT245.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,bus transceiver,octal; CMOS; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; bus transceiver; octal
Technology: CMOS
Mounting: SMD
Case: SO20
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
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74VHC245PW,118 74VHC245PW,118 NEXPERIA 74VHC_VHCT245.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,bus transceiver,octal; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; bus transceiver; octal
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
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PDTA143ZU,115 PDTA143ZU,115 NEXPERIA PDTA143ZU.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 100
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PDTA143ZT,215 PDTA143ZT,215 NEXPERIA PDTA143ZT.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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1N4732A,113 1N4732A,113 NEXPERIA 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.7V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.2V
Max. load current: 0.5A
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1N4732A,133 1N4732A,133 NEXPERIA 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.7V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward voltage: 1.2V
Max. load current: 0.5A
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BZX84-C4V3,215 BZX84-C4V3,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84-C4V3,235 BZX84-C4V3,235 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84-C4V3-QR BZX84-C4V3-QR NEXPERIA BZX84-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZV55-C3V6,115 BZV55-C3V6,115 NEXPERIA BZV55-C10.115.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
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74HCT74PW,118 74HCT74PW,118 NEXPERIA 74HCT74PW,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Family: HCT
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74HCT74BQ,115 NEXPERIA 74HCT74BQ,115.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Family: HCT
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74HCT74BZZ NEXPERIA 74HC_HCT74.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; DHXQFN14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Case: DHXQFN14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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1N4738A,133 1N4738A,133 NEXPERIA 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 8.2V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: Ammo Pack
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1N4738A,113 1N4738A,113 NEXPERIA 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 8.2V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: reel; tape
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2N7002P,215 2N7002P,215 NEXPERIA 2N7002P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
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2N7002KQBZ NEXPERIA 2N7002KQB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 720mA
Power dissipation: 0.42W
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±16V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.9A
Version: ESD
Technology: Trench
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PESD12VL2BT,215 PESD12VL2BT,215 NEXPERIA PESD5V0L2BT-DTE.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 15.8V; 5A; 200W; bidirectional,double; ESD; SOT23
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 15.8V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Number of channels: 2
Application: automotive industry
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PESD15VL2BT,215 PESD15VL2BT,215 NEXPERIA PESD5V0L2BT-DTE.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 18.8V; 5A; 200W; bidirectional,double; ESD; SOT23
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 18.8V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Number of channels: 2
Application: automotive industry
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PESD1CAN-UX PESD1CAN-UX NEXPERIA PESD1CAN-U.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4÷30.3V; 3A; 150W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 25.4...30.3V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SC70; SOT323
Max. off-state voltage: 24V
Leakage current: 50nA
Application: automotive industry
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PESD24VL2BT,215 PESD24VL2BT,215 NEXPERIA PESD5V0L2BT-DTE.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 200W; 27.8V; 3A; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 50nA
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PESD12VS2UT,215 PESD12VS2UT,215 NEXPERIA PESD12VS2UT.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 14.7÷15.3V; 5A; 180W; ESD; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 14.7...15.3V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.18kW
Semiconductor structure: common anode; double; unidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
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PESD15VS1UB,115 PESD15VS1UB,115 NEXPERIA PESD5V0S1UB-DTE.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 160W; 18V; 5A; unidirectional; SOD523; max.150°C
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 15V
Breakdown voltage: 18V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Operating temperature: max. 150°C
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PESD1IVN27-UX PESD1IVN27-UX NEXPERIA PESD1IVN27-U.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional; ESD; SC70,SOT323; Ch: 1
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 27V
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Application: automotive industry
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PESD24VS2UAT,215 PESD24VS2UAT,215 NEXPERIA PESD24VS2UAT.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 3A; double,common cathode; ESD; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 24V
Semiconductor structure: common cathode; double
Leakage current: 50nA
Capacitance: 50pF
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 3A
Version: ESD
Application: automotive industry
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PESD15VS2UAT,215 PESD15VS2UAT,215 NEXPERIA PESD15VS2UAT.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 17.6÷18.4V; 5A; 160W; double,common cathode; ESD
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6...18.4V
Max. forward impulse current: 5A
Semiconductor structure: common cathode; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Capacitance: 70pF
Number of channels: 2
Application: automotive industry
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PESD1FLEX,215 PESD1FLEX,215 NEXPERIA PESD1FLEX.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4÷30.3V; 200W; bidirectional,double; ESD
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 25.4...30.3V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Number of channels: 2
Application: automotive industry
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BAS321,115 BAS321,115 NEXPERIA BAS321.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 250mA; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
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BAS321,135 BAS321,135 NEXPERIA BAS321.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 250mA; 50ns; SOD323; Ufmax: 1.25V; 0.3W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
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HEF4052BT,653 HEF4052BT,653 NEXPERIA HEF4052BP.pdf HEF4052B.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer; Ch: 2; IN: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOP16
Family: HEF4000B
Kind of package: reel; tape
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HEF4052BTT,118 HEF4052BTT,118 NEXPERIA HEF4052B.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer; Ch: 2; IN: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HEF4000B
Kind of package: reel; tape
Supply voltage: 3...15V DC
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HEF4520BT,653 HEF4520BT,653 NEXPERIA HEF4520B.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter; Ch: 2; CMOS; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 4.5...15.5V DC
Kind of package: reel; tape
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HEF4069UBT,653 HEF4069UBT,653 NEXPERIA HEF4069UBP.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷15VDC; reel,tape; HEF4000B
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...15V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Family: HEF4000B
Number of channels: hex; 6
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HEF4069UBTT,118 HEF4069UBTT,118 NEXPERIA HEF4069UB.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 6; CMOS; SMD; TSSOP14; 3÷15VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...15V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 6
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BZV55-C5V1,115 BZV55-C5V1,115 NEXPERIA BZV55-C10.115.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD80C
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.9V
Max. load current: 0.25A
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BZV55-C5V1,135 BZV55-C5V1,135 NEXPERIA BZV55_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD80C
Kind of package: reel; tape
Max. forward voltage: 0.9V
Max. load current: 0.25A
Semiconductor structure: single diode
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74HC00PW,118 74HC00PW,118 NEXPERIA 74HC00PW,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 135ns
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Technology: CMOS
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74HC00BQ,115 NEXPERIA 74HC00BQ,115.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: DHVQFN14
Family: HC
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 135ns
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Technology: CMOS
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74HCT00PW,118 74HCT00PW,118 NEXPERIA 74HCT00PW,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 29ns
Technology: CMOS; TTL
Family: HCT
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74HCT00BQ,115 NEXPERIA 74HCT00BQ,115.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: DHVQFN14
Family: HCT
Kind of package: reel; tape
Delay time: 29ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
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74HC166DB,118 74HC166DB,118 NEXPERIA 74HC_HCT166.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Mounting: SMD
Case: SSOP16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
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BAT54C,215 BAT54C,215 NEXPERIA BAT54C.pdf description Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Leakage current: 2µA
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BAT54C,235 BAT54C,235 NEXPERIA BAT54C.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Leakage current: 2µA
Produkt ist nicht verfügbar
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BAT54C-QR BAT54C-QR NEXPERIA BAT54C-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Application: automotive industry
Leakage current: 2µA
Produkt ist nicht verfügbar
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BAT54CW-QX BAT54CW-QX NEXPERIA BAT54CW-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84-C18,235 BZX84-C18,235 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84-C18-QR BZX84-C18-QR NEXPERIA BZX84-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PDTC114EQAZ NEXPERIA PDTC143_114_124_144EQA_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 440mW; DFN1010D-3,SOT1215
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.44W
Case: DFN1010D-3; SOT1215
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BSR19A,215 BSR19A,215 NEXPERIA BSR19A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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BSR16,215 BSR16,215 NEXPERIA BSR15,16.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.25W
Polarisation: bipolar
Pulsed collector current: 0.8A
Type of transistor: PNP
Current gain: 50...300
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Frequency: 200MHz
Collector current: 0.6A
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PBSS5250X,115 PBSS5250X,115 NEXPERIA PBSS5250X.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 100...200
Produkt ist nicht verfügbar
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PBSS5220PAPSX NEXPERIA PBSS5220PAPS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D
Polarisation: bipolar
Type of transistor: PNP x2
Current gain: 100...400
Kind of package: reel; tape
Case: DFN2020D-6; SOT1118D
Frequency: 95MHz
Collector current: 2A
Mounting: SMD
Collector-emitter voltage: 20V
Produkt ist nicht verfügbar
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PBSS5230T,215 PBSS5230T,215 NEXPERIA PBSS5230T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Current gain: 100...450
Produkt ist nicht verfügbar
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PDTA114ET,215 PDTA114ET,215 NEXPERIA PDTA114ET.pdf PDTA114E_SERIES_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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PDTA114EU,115 PDTA114EU,115 NEXPERIA PDTA114EU.pdf PDTA114E_SERIES_8.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
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PDTA114YT,215 PDTA114YT,215 NEXPERIA PDTA114Y_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 100
Kind of package: 7 inch reel; tape
Base-emitter resistor: 47kΩ
Case: SOT23; TO236AB
Frequency: 180MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
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PDTA114TU,115 PDTA114TU,115 NEXPERIA PDTA114T_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 200
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PDTA114TT,215 PDTA114TT,215 NEXPERIA PDTA114T_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 10kΩ
Current gain: 200
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BC860CW,115 BC860CW,115 NEXPERIA BC859W_860W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC860C,215 BC860C,215 NEXPERIA BC859_BC860.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: 7 inch reel; tape
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74VHC245D,118 74VHC_VHCT245.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,bus transceiver,octal; CMOS; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; bus transceiver; octal
Technology: CMOS
Mounting: SMD
Case: SO20
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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74VHC245PW,118 74VHC_VHCT245.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,bus transceiver,octal; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; bus transceiver; octal
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
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PDTA143ZU,115 PDTA143ZU.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 100
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PDTA143ZT,215 PDTA143ZT.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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1N4732A,113 1N4728A_SER.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.7V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1.2V
Max. load current: 0.5A
Produkt ist nicht verfügbar
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1N4732A,133 1N4728A_SER.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.7V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.7V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward voltage: 1.2V
Max. load current: 0.5A
Produkt ist nicht verfügbar
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BZX84-C4V3,215 BZX84_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84-C4V3,235 BZX84_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84-C4V3-QR BZX84-Q_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZV55-C3V6,115 BZV55-C10.115.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
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74HCT74PW,118 74HCT74PW,118.pdf
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Family: HCT
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74HCT74BQ,115 74HCT74BQ,115.pdf
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Family: HCT
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74HCT74BZZ 74HC_HCT74.pdf
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; DHXQFN14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Case: DHXQFN14
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4738A,133 1N4728A_SER.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 8.2V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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1N4738A,113 1N4728A_SER.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 8.2V; DO41; single diode; 500mA; Ufmax: 1.2V
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. load current: 0.5A
Kind of package: reel; tape
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2N7002P,215 2N7002P.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
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2N7002KQBZ 2N7002KQB.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 720mA
Power dissipation: 0.42W
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±16V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.9A
Version: ESD
Technology: Trench
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PESD12VL2BT,215 PESD5V0L2BT-DTE.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15.8V; 5A; 200W; bidirectional,double; ESD; SOT23
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 15.8V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Number of channels: 2
Application: automotive industry
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PESD15VL2BT,215 PESD5V0L2BT-DTE.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 18.8V; 5A; 200W; bidirectional,double; ESD; SOT23
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 18.8V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Number of channels: 2
Application: automotive industry
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PESD1CAN-UX PESD1CAN-U.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4÷30.3V; 3A; 150W; bidirectional,double; ESD
Type of diode: TVS array
Breakdown voltage: 25.4...30.3V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: bidirectional; double
Version: ESD
Mounting: SMD
Case: SC70; SOT323
Max. off-state voltage: 24V
Leakage current: 50nA
Application: automotive industry
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PESD24VL2BT,215 PESD5V0L2BT-DTE.pdf
Hersteller: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 200W; 27.8V; 3A; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 50nA
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PESD12VS2UT,215 PESD12VS2UT.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.7÷15.3V; 5A; 180W; ESD; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 14.7...15.3V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.18kW
Semiconductor structure: common anode; double; unidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
Produkt ist nicht verfügbar
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PESD15VS1UB,115 PESD5V0S1UB-DTE.pdf
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 160W; 18V; 5A; unidirectional; SOD523; max.150°C
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 15V
Breakdown voltage: 18V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Operating temperature: max. 150°C
Produkt ist nicht verfügbar
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PESD1IVN27-UX PESD1IVN27-U.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional; ESD; SC70,SOT323; Ch: 1
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 27V
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Application: automotive industry
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PESD24VS2UAT,215 PESD24VS2UAT.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 27V; 3A; double,common cathode; ESD; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 24V
Semiconductor structure: common cathode; double
Leakage current: 50nA
Capacitance: 50pF
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 3A
Version: ESD
Application: automotive industry
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PESD15VS2UAT,215 PESD15VS2UAT.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 17.6÷18.4V; 5A; 160W; double,common cathode; ESD
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6...18.4V
Max. forward impulse current: 5A
Semiconductor structure: common cathode; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Capacitance: 70pF
Number of channels: 2
Application: automotive industry
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PESD1FLEX,215 PESD1FLEX.pdf
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4÷30.3V; 200W; bidirectional,double; ESD
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 25.4...30.3V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 50nA
Number of channels: 2
Application: automotive industry
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BAS321,115 BAS321.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 250mA; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
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BAS321,135 BAS321.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 250mA; 50ns; SOD323; Ufmax: 1.25V; 0.3W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HEF4052BT,653 HEF4052BP.pdf HEF4052B.pdf
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer; Ch: 2; IN: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOP16
Family: HEF4000B
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HEF4052BTT,118 HEF4052B.pdf
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer; Ch: 2; IN: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HEF4000B
Kind of package: reel; tape
Supply voltage: 3...15V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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HEF4520BT,653 HEF4520B.pdf
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter; Ch: 2; CMOS; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 4.5...15.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HEF4069UBT,653 HEF4069UBP.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷15VDC; reel,tape; HEF4000B
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...15V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Family: HEF4000B
Number of channels: hex; 6
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HEF4069UBTT,118 HEF4069UB.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 6; CMOS; SMD; TSSOP14; 3÷15VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...15V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BZV55-C5V1,115 BZV55-C10.115.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD80C
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.9V
Max. load current: 0.25A
Produkt ist nicht verfügbar
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BZV55-C5V1,135 BZV55_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD80C
Kind of package: reel; tape
Max. forward voltage: 0.9V
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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74HC00PW,118 74HC00PW,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 135ns
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Technology: CMOS
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74HC00BQ,115 74HC00BQ,115.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: DHVQFN14
Family: HC
Quiescent current: 40µA
Kind of package: reel; tape
Delay time: 135ns
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Technology: CMOS
Produkt ist nicht verfügbar
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74HCT00PW,118 74HCT00PW,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 29ns
Technology: CMOS; TTL
Family: HCT
auf Bestellung 7469 Stücke:
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74HCT00BQ,115 74HCT00BQ,115.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: DHVQFN14
Family: HCT
Kind of package: reel; tape
Delay time: 29ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
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74HC166DB,118 74HC_HCT166.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Mounting: SMD
Case: SSOP16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
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BAT54C,215 description BAT54C.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Leakage current: 2µA
auf Bestellung 159560 Stücke:
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BAT54C,235 BAT54C.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Leakage current: 2µA
Produkt ist nicht verfügbar
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BAT54C-QR BAT54C-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.25W
Application: automotive industry
Leakage current: 2µA
Produkt ist nicht verfügbar
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BAT54CW-QX BAT54CW-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Application: automotive industry
Produkt ist nicht verfügbar
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BZX84-C18,235 BZX84_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84-C18-QR BZX84-Q_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PDTC114EQAZ PDTC143_114_124_144EQA_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 440mW; DFN1010D-3,SOT1215
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.44W
Case: DFN1010D-3; SOT1215
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BSR19A,215 BSR19A.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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BSR16,215 BSR15,16.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 250mW; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.25W
Polarisation: bipolar
Pulsed collector current: 0.8A
Type of transistor: PNP
Current gain: 50...300
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Frequency: 200MHz
Collector current: 0.6A
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PBSS5250X,115 PBSS5250X.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 100...200
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PBSS5220PAPSX PBSS5220PAPS.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D
Polarisation: bipolar
Type of transistor: PNP x2
Current gain: 100...400
Kind of package: reel; tape
Case: DFN2020D-6; SOT1118D
Frequency: 95MHz
Collector current: 2A
Mounting: SMD
Collector-emitter voltage: 20V
Produkt ist nicht verfügbar
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PBSS5230T,215 PBSS5230T.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Current gain: 100...450
Produkt ist nicht verfügbar
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PDTA114ET,215 PDTA114ET.pdf PDTA114E_SERIES_8.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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PDTA114EU,115 PDTA114EU.pdf PDTA114E_SERIES_8.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
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PDTA114YT,215 PDTA114Y_SER.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 100
Kind of package: 7 inch reel; tape
Base-emitter resistor: 47kΩ
Case: SOT23; TO236AB
Frequency: 180MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
auf Bestellung 8955 Stücke:
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PDTA114TU,115 PDTA114T_SER.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 200
auf Bestellung 5736 Stücke:
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PDTA114TT,215 PDTA114T_SER.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 10kΩ
Current gain: 200
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BC860CW,115 BC859W_860W.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC860C,215 BC859_BC860.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: 7 inch reel; tape
auf Bestellung 7680 Stücke:
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Im Einkaufswagen  Stück im Wert von  UAH