| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NOIX1SE045KB-GTI | onsemi |
Description: XGS45MP 24PORT COLOR 10D CRAPackaging: Bulk Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 31 |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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| NOIX1SE045KB-GTI | onsemi |
Description: XGS45MP 24PORT COLOR 10D CRAPackaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 31 |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| NOIX2SE045KB-GTI | onsemi |
Description: XGS45MP 12PORT COLOR 10D CRAPackaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 12 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX1SN045KB-GTI | onsemi |
Description: XGS45MP 24PORT MONO 10D CRAPackaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 31.0 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX2SN045KB-GTI | onsemi |
Description: XGS45MP 12PORT MONO 10D CRAPackaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 12.0 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX0SN045KB-GTI | onsemi |
Description: XGS45MP 48PORT MONO 10D CRAPackaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 48.0 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| NOIX0SE045KB-GTI | onsemi |
Description: XGS45MP 48PORT COLOR 10D CRAPackaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 8192H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 48 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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BC548BRL1G | onsemi |
Description: TRANS NPN 30V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
auf Bestellung 124805 Stücke: Lieferzeit 10-14 Tag (e) |
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BC548BZL1G | onsemi |
Description: TRANS NPN 30V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
auf Bestellung 80995 Stücke: Lieferzeit 10-14 Tag (e) |
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BXL4004-1E | onsemi |
Description: BXL4004 - N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 20 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB5405NT4G | onsemi |
Description: MOSFET N-CH 40V 116A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NVB5404NT4G | onsemi |
Description: MOSFET N-CH 40V 24A D2PAKPackaging: Cut Tape (CT) |
auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
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HCPL2631WV | onsemi |
Description: OPTOISO 2.5KV 2CH OPN COLL 8MDIPPackaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-MDIP Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 2 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NB7L216MNEVB | onsemi |
Description: EVAL BOARD FOR NB7L216MN Packaging: Bulk Function: Clock Buffer/Driver/Receiver/Translator Type: Timing Utilized IC / Part: NB7L1216 Supplied Contents: Board(s) Primary Attributes: Input Up To 12Gb/s and 8.5GHz Embedded: No |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847CDXV6T5 | onsemi |
Description: TRANS 2NPN 45V 100MA SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 |
auf Bestellung 7755 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM217CR4 | onsemi |
Description: OPTOISO 3.75KV 1CH TRANS 4-SOPPackaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB70450 | onsemi |
Description: MOSFET IPM 500V 4.8A 27-PWRLQFNPackaging: Tape & Reel (TR) Package / Case: 27-PowerLQFN Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 4.8 A Voltage: 500 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB70450 | onsemi |
Description: MOSFET IPM 500V 4.8A 27-PWRLQFNPackaging: Cut Tape (CT) Package / Case: 27-PowerLQFN Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 4.8 A Voltage: 500 V |
auf Bestellung 9863 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB70550 | onsemi |
Description: MODULE SPM 500V 5.3A 27PWRLQFNPackaging: Tape & Reel (TR) Package / Case: 27-PowerLQFN Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 5.3 A Voltage: 500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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FSB70550 | onsemi |
Description: MODULE SPM 500V 5.3A 27PWRLQFNPackaging: Cut Tape (CT) Package / Case: 27-PowerLQFN Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 5.3 A Voltage: 500 V |
auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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74F240SC | onsemi |
Description: IC BUFFER INVERTING 5.5V 20-SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 3mA, 64mA Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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74F240SCX | onsemi |
Description: IC BUFFER INVERTING 5.5V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 3mA, 64mA Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NOIX1SE8000B-LTI1 | onsemi |
Description: XGS8MP, 24PORT, COLOR 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128.0 |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX1SE8000B-LTI | onsemi |
Description: IC IMAGE SENSOR CMOSPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128.0 |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX2SE8000B-LTI | onsemi |
Description: IC IMAGE SENS 8MP COLOR 163CLGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128.0 |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX2SE8000B-LTI1 | onsemi |
Description: IC IMAGE SENS 8MP COLOR 163CLGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 2160V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 128.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NRVS2J | onsemi |
Description: DIODE GEN PURP 600V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CNY17F4SM | onsemi |
Description: OPTOISO 4.17KV TRANS 6SMDPackaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 160% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 320% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531-345A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 5310 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531-392A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 16599 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531U36AA-E | onsemi |
Description: MODULE IPM INVERTER 3PH 29SIP Packaging: Bulk |
auf Bestellung 884 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531U360A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 1243 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531U390A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531-344A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK531U369C-E | onsemi |
Description: IC IPM INVERTER SIP29 Packaging: Bulk |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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LC87FC096AVUEF-3H | onsemi |
Description: 8-BIT MICROCONTROLLER WITH 98K-BPackaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FAM65CR51DZ1 | onsemi |
Description: MOSFET 2N-CH 650V 33A APMCD-B16Packaging: Tube Package / Case: 12-SSIP Exposed Pad, Formed Leads Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 160W (Tc) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs(th) (Max) @ Id: 5V @ 3.3mA Supplier Device Package: APMCD-B16 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
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NXV08A170DB2 | onsemi |
Description: MOSFET 2N-CH 80V 200A APM12-CBAPackaging: Tray Package / Case: 12-PowerDIP Module (1.118", 28.40mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: APM12-CBA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXV08H250DT1 | onsemi |
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHAPackaging: Tube Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MDC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 160 Stücke: Lieferzeit 10-14 Tag (e) |
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NXV08H250DPT2 | onsemi |
Description: MOSFET 4N-CH 80V APM17-MFAPackaging: Tube Package / Case: 17-PowerDIP Module (2.020", 51.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: -40°C ~ 125°C Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MFA Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| NXV08H300DT1 | onsemi |
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHAPackaging: Tube Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MDC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFC-30035-SMT-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 4SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 600ps Spectral Range: 300nm ~ 950nm Color - Enhanced: Blue Active Area: 9mm² Current - Dark (Typ): 154nA Voltage - DC Reverse (Vr) (Max): 24.7 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MICROFC-30035-SMT-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 4SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 600ps Spectral Range: 300nm ~ 950nm Color - Enhanced: Blue Active Area: 9mm² Current - Dark (Typ): 154nA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 1675 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFC-30050-SMT-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 4SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 600ps Spectral Range: 300nm ~ 950nm Color - Enhanced: Blue Active Area: 9mm² Current - Dark (Typ): 319nA Voltage - DC Reverse (Vr) (Max): 24.7 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MICROFC-30050-SMT-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 4SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 600ps Spectral Range: 300nm ~ 950nm Color - Enhanced: Blue Active Area: 9mm² Current - Dark (Typ): 319nA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 2105 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFJ-60035-TSV-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 36WBGAPackaging: Tape & Reel (TR) Package / Case: 36-WBGA Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 250ps Spectral Range: 200nm ~ 900nm Active Area: 36.85mm² Current - Dark (Typ): 7.5µA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFJ-60035-TSV-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 36WBGAPackaging: Cut Tape (CT) Package / Case: 36-WBGA Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 250ps Spectral Range: 200nm ~ 900nm Active Area: 36.85mm² Current - Dark (Typ): 7.5µA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 7175 Stücke: Lieferzeit 10-14 Tag (e) |
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CS4172XDWFR16 | onsemi |
Description: IC AIR CORE GAUGE DRIVER 16-SOPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Air Core Gauge Driver Supplier Device Package: 16-SO |
auf Bestellung 2899 Stücke: Lieferzeit 10-14 Tag (e) |
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ADP4100JCPZ-REEL | onsemi |
Description: IC REG CONV VR11 6OUT 48LFCSPPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad, CSP Voltage - Output: 0.38V ~ 1.6V Mounting Type: Surface Mount Number of Outputs: 6 Voltage - Input: 4.7V ~ 5.75V Operating Temperature: 0°C ~ 85°C Applications: Converter, Intel VR11, VR11.1 Supplier Device Package: 48-LFCSP (7x7) |
auf Bestellung 181879 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRA140T3 | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
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NE521D | onsemi |
Description: IC COMPARATOR DUAL DIFF 14-SOICPackaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SZ1SMA5914BT3G | onsemi |
Description: DIODE ZENER 3.6V 500MW SMATolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: SMA Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZ1SMA5914BT3G | onsemi |
Description: DIODE ZENER 3.6V 500MW SMATolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: SMA Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 10411 Stücke: Lieferzeit 10-14 Tag (e) |
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H11B1M | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 1mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 25µs, 18µs Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P6KE22ARL | onsemi |
Description: TVS DIODE 18.8VWM 30.6VC AXIALPackaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 18.8V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 20.9V Voltage - Clamping (Max) @ Ipp: 30.6V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 19533 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV887105D1R2G | onsemi |
Description: IC REG CTRLR BOOST/FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Up/Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 170kHz Topology: Boost, Flyback Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V Supplier Device Package: 8-SOIC Synchronous Rectifier: No Control Features: Current Limit, Enable Output Phases: 1 Duty Cycle (Max): 88% Clock Sync: Yes Grade: Automotive Number of Outputs: 1 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NCV887105D1R2G | onsemi |
Description: IC REG CTRLR BOOST/FLYBACK 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Up/Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 170kHz Topology: Boost, Flyback Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V Supplier Device Package: 8-SOIC Synchronous Rectifier: No Control Features: Current Limit, Enable Output Phases: 1 Duty Cycle (Max): 88% Clock Sync: Yes Grade: Automotive Number of Outputs: 1 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NCV8871BSTGEVB | onsemi |
Description: BOARD EVAL NCV8871BST BOOST CTLRPackaging: Bulk Voltage - Output: 18V Voltage - Input: 13.2V Current - Output: 9A Frequency - Switching: 170kHz Regulator Topology: Boost Board Type: Fully Populated Utilized IC / Part: NCV8871 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up Outputs and Type: 1, Non-Isolated |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCV8871LVBGEVB | onsemi |
Description: BOARD EVAL NCV8871LVB BOOST CTLRPackaging: Bulk Regulator Topology: Boost Board Type: Fully Populated Utilized IC / Part: NCV8871 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up Outputs and Type: 1, Non-Isolated |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NSR0130M2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA SOD723Packaging: Bulk Package / Case: SOD-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-723 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
auf Bestellung 2784666 Stücke: Lieferzeit 10-14 Tag (e) |
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| NOIX1SE045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Bulk
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Bulk
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4756.38 EUR |
| NOIX1SE045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
Description: XGS45MP 24PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4422.99 EUR |
| NOIX2SE045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 12PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12
Description: XGS45MP 12PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4302.43 EUR |
| NOIX1SN045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 24PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31.0
Description: XGS45MP 24PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31.0
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4027.32 EUR |
| NOIX2SN045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 12PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12.0
Description: XGS45MP 12PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 12.0
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3716.03 EUR |
| NOIX0SN045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 48PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48.0
Description: XGS45MP 48PORT MONO 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48.0
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4411.9 EUR |
| NOIX0SE045KB-GTI |
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Hersteller: onsemi
Description: XGS45MP 48PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48
Description: XGS45MP 48PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 8192H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 48
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5294.17 EUR |
| BC548BRL1G |
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Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
auf Bestellung 124805 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6045+ | 0.075 EUR |
| BC548BZL1G |
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Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
auf Bestellung 80995 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6045+ | 0.075 EUR |
| BXL4004-1E |
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Hersteller: onsemi
Description: BXL4004 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 20 V
Description: BXL4004 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 20 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 2.45 EUR |
| NTB5405NT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 116A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
Description: MOSFET N-CH 40V 116A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB5404NT4G |
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auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.63 EUR |
| 10+ | 3.69 EUR |
| 100+ | 2.58 EUR |
| HCPL2631WV |
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Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPN COLL 8MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
Description: OPTOISO 2.5KV 2CH OPN COLL 8MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NB7L216MNEVB |
Hersteller: onsemi
Description: EVAL BOARD FOR NB7L216MN
Packaging: Bulk
Function: Clock Buffer/Driver/Receiver/Translator
Type: Timing
Utilized IC / Part: NB7L1216
Supplied Contents: Board(s)
Primary Attributes: Input Up To 12Gb/s and 8.5GHz
Embedded: No
Description: EVAL BOARD FOR NB7L216MN
Packaging: Bulk
Function: Clock Buffer/Driver/Receiver/Translator
Type: Timing
Utilized IC / Part: NB7L1216
Supplied Contents: Board(s)
Primary Attributes: Input Up To 12Gb/s and 8.5GHz
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 772.15 EUR |
| BC847CDXV6T5 |
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Hersteller: onsemi
Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Description: TRANS 2NPN 45V 100MA SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
auf Bestellung 7755 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2597+ | 0.18 EUR |
| FODM217CR4 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.44 EUR |
| FSB70450 |
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Hersteller: onsemi
Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 7.08 EUR |
| FSB70450 |
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Hersteller: onsemi
Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Cut Tape (CT)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
Description: MOSFET IPM 500V 4.8A 27-PWRLQFN
Packaging: Cut Tape (CT)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 4.8 A
Voltage: 500 V
auf Bestellung 9863 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.28 EUR |
| 10+ | 10.53 EUR |
| 100+ | 8.67 EUR |
| FSB70550 |
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Hersteller: onsemi
Description: MODULE SPM 500V 5.3A 27PWRLQFN
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 5.3 A
Voltage: 500 V
Description: MODULE SPM 500V 5.3A 27PWRLQFN
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 5.3 A
Voltage: 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB70550 |
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Hersteller: onsemi
Description: MODULE SPM 500V 5.3A 27PWRLQFN
Packaging: Cut Tape (CT)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 5.3 A
Voltage: 500 V
Description: MODULE SPM 500V 5.3A 27PWRLQFN
Packaging: Cut Tape (CT)
Package / Case: 27-PowerLQFN Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 5.3 A
Voltage: 500 V
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.15 EUR |
| 10+ | 12.99 EUR |
| 100+ | 10.82 EUR |
| 500+ | 9.55 EUR |
| 74F240SC |
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Hersteller: onsemi
Description: IC BUFFER INVERTING 5.5V 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-SOIC
Description: IC BUFFER INVERTING 5.5V 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74F240SCX |
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Hersteller: onsemi
Description: IC BUFFER INVERTING 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-SOIC
Description: IC BUFFER INVERTING 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIX1SE8000B-LTI1 |
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Hersteller: onsemi
Description: XGS8MP, 24PORT, COLOR 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Description: XGS8MP, 24PORT, COLOR 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 547.82 EUR |
| NOIX1SE8000B-LTI |
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Hersteller: onsemi
Description: IC IMAGE SENSOR CMOS
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Description: IC IMAGE SENSOR CMOS
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 547.82 EUR |
| NOIX2SE8000B-LTI |
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Hersteller: onsemi
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 558.18 EUR |
| 5+ | 525.2 EUR |
| 10+ | 512.89 EUR |
| NOIX2SE8000B-LTI1 |
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Hersteller: onsemi
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Description: IC IMAGE SENS 8MP COLOR 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 2160V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 128.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVS2J |
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Hersteller: onsemi
Description: DIODE GEN PURP 600V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CNY17F4SM |
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Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 20+ | 0.88 EUR |
| 100+ | 0.58 EUR |
| STK531-345A-E |
auf Bestellung 5310 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 14.95 EUR |
| STK531-392A-E |
auf Bestellung 16599 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 18.39 EUR |
| STK531U36AA-E |
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 20.49 EUR |
| STK531U360A-E |
auf Bestellung 1243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 21.04 EUR |
| STK531U390A-E |
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 23.77 EUR |
| STK531-344A-E |
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 17.66 EUR |
| STK531U369C-E |
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 17.92 EUR |
| LC87FC096AVUEF-3H |
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Hersteller: onsemi
Description: 8-BIT MICROCONTROLLER WITH 98K-B
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: 8-BIT MICROCONTROLLER WITH 98K-B
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 154+ | 3.15 EUR |
| FAM65CR51DZ1 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 650V 33A APMCD-B16
Packaging: Tube
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 160W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Supplier Device Package: APMCD-B16
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 650V 33A APMCD-B16
Packaging: Tube
Package / Case: 12-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 160W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3.3mA
Supplier Device Package: APMCD-B16
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 39.78 EUR |
| 72+ | 31.88 EUR |
| NXV08A170DB2 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 80V 200A APM12-CBA
Packaging: Tray
Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: APM12-CBA
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 80V 200A APM12-CBA
Packaging: Tray
Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: APM12-CBA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 33.44 EUR |
| 10+ | 23.95 EUR |
| 25+ | 21.44 EUR |
| 80+ | 18.99 EUR |
| NXV08H250DT1 |
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Hersteller: onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 98.22 EUR |
| NXV08H250DPT2 |
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Hersteller: onsemi
Description: MOSFET 4N-CH 80V APM17-MFA
Packaging: Tube
Package / Case: 17-PowerDIP Module (2.020", 51.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MFA
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 4N-CH 80V APM17-MFA
Packaging: Tube
Package / Case: 17-PowerDIP Module (2.020", 51.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MFA
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXV08H300DT1 |
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Hersteller: onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Rds On (Max) @ Id, Vgs: 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 103.15 EUR |
| MICROFC-30035-SMT-TR |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MICROFC-30035-SMT-TR |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 1675 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 25.31 EUR |
| 5+ | 23.04 EUR |
| 10+ | 22.2 EUR |
| 25+ | 21.2 EUR |
| 50+ | 20.62 EUR |
| MICROFC-30050-SMT-TR |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MICROFC-30050-SMT-TR |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 319nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 2105 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 25.29 EUR |
| 5+ | 23.02 EUR |
| 10+ | 22.19 EUR |
| 25+ | 21.18 EUR |
| 50+ | 20.6 EUR |
| MICROFJ-60035-TSV-TR |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 32.31 EUR |
| MICROFJ-60035-TSV-TR |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Cut Tape (CT)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 36WBGA
Packaging: Cut Tape (CT)
Package / Case: 36-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 250ps
Spectral Range: 200nm ~ 900nm
Active Area: 36.85mm²
Current - Dark (Typ): 7.5µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 7175 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 45.41 EUR |
| 5+ | 41.63 EUR |
| 10+ | 40.23 EUR |
| 25+ | 39.4 EUR |
| CS4172XDWFR16 |
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Hersteller: onsemi
Description: IC AIR CORE GAUGE DRIVER 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Air Core Gauge Driver
Supplier Device Package: 16-SO
Description: IC AIR CORE GAUGE DRIVER 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Air Core Gauge Driver
Supplier Device Package: 16-SO
auf Bestellung 2899 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 6.55 EUR |
| ADP4100JCPZ-REEL |
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Hersteller: onsemi
Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
Description: IC REG CONV VR11 6OUT 48LFCSP
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad, CSP
Voltage - Output: 0.38V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 4.7V ~ 5.75V
Operating Temperature: 0°C ~ 85°C
Applications: Converter, Intel VR11, VR11.1
Supplier Device Package: 48-LFCSP (7x7)
auf Bestellung 181879 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 159+ | 2.85 EUR |
| MBRA140T3 | ![]() |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMA5914BT3G |
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Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
| 10000+ | 0.36 EUR |
| SZ1SMA5914BT3G |
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Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 500MW SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: SMA
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 35.5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10411 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.42 EUR |
| H11B1M |
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Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 25µs, 18µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 25µs, 18µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6KE22ARL |
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Hersteller: onsemi
Description: TVS DIODE 18.8VWM 30.6VC AXIAL
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 18.8VWM 30.6VC AXIAL
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 19533 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1817+ | 0.25 EUR |
| NCV887105D1R2G |
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Hersteller: onsemi
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 170kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Enable
Output Phases: 1
Duty Cycle (Max): 88%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 1
Qualification: AEC-Q100
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 170kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Enable
Output Phases: 1
Duty Cycle (Max): 88%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV887105D1R2G |
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Hersteller: onsemi
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 170kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Enable
Output Phases: 1
Duty Cycle (Max): 88%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 1
Qualification: AEC-Q100
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 170kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Enable
Output Phases: 1
Duty Cycle (Max): 88%
Clock Sync: Yes
Grade: Automotive
Number of Outputs: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8871BSTGEVB |
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Hersteller: onsemi
Description: BOARD EVAL NCV8871BST BOOST CTLR
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 13.2V
Current - Output: 9A
Frequency - Switching: 170kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL NCV8871BST BOOST CTLR
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 13.2V
Current - Output: 9A
Frequency - Switching: 170kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 205.99 EUR |
| NCV8871LVBGEVB |
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Hersteller: onsemi
Description: BOARD EVAL NCV8871LVB BOOST CTLR
Packaging: Bulk
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL NCV8871LVB BOOST CTLR
Packaging: Bulk
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: NCV8871
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1, Non-Isolated
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 205.99 EUR |
| NSR0130M2T5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 100MA SOD723
Packaging: Bulk
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-723
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD723
Packaging: Bulk
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-723
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
auf Bestellung 2784666 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7869+ | 0.061 EUR |



























