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NL17SHT00P5T5G NL17SHT00P5T5G onsemi nl17sht00-d.pdf Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Bulk
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NL17SHT04P5T5G NL17SHT04P5T5G onsemi nl17sht04-d.pdf Description: IC INVERTER 1CH 1-INP SOT953
Packaging: Bulk
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NCP139AFCT100T2G NCP139AFCT100T2G onsemi ncp139-d.pdf Description: IC REG LINEAR 1V 1A 6-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NCP139AFCT180T2G NCP139AFCT180T2G onsemi ncp139-d.pdf Description: IC REG LINEAR 1.8V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Under Voltage Lockout (UVLO)
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NCP4326DR2G NCP4326DR2G onsemi NCP4326-D.pdf Description: IC REG SECONDRY CTRL 3OUT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 15V
Operating Temperature: 0°C ~ 105°C
Applications: Secondary Controller, Quasi-Resonant Switchmode Power Supplies
Supplier Device Package: 16-SOIC
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NCP177BMX070TCG NCP177BMX070TCG onsemi NCP177.pdf Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP177BMX070TCG NCP177BMX070TCG onsemi NCP177.pdf Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP114BMX075TCG NCP114BMX075TCG onsemi NCP114-D.PDF Description: NCP114 - LDO REGULATOR, 300 MA,
Packaging: Bulk
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.75V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP177AMX070TCG NCP177AMX070TCG onsemi ncp177-d.pdf Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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FGY60T120SWD FGY60T120SWD onsemi fgy60t120swd-d.pdf Description: IGBT FS 1200V 105A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 28.8ns/153.6ns
Switching Energy: 5.7mJ (on), 2.8mJ (off)
Test Condition: 600V, 60A, 4.7Ohm, 15V
Gate Charge: 174 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 635 W
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NXH160T120L2Q2F2SG onsemi NXH160T120L2Q2-D.PDF Description: POWER INTEGRATED MODULE (PIM), I
Packaging: Bulk
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SNXH160T120L2Q1PG SNXH160T120L2Q1PG onsemi SNXH160T120L2Q1PG_Rev3_Jul2016.pdf Description: IGBT MODULE 1200V 140A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19380 pF @ 25 V
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1.5SMC27AT3 1.5SMC27AT3 onsemi 1.5_SZ1.5_SMC6.8AT3G_Series.pdf Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5SMC27AT3 1.5SMC27AT3 onsemi 1.5_SZ1.5_SMC6.8AT3G_Series.pdf Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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RD1006LS-SB5 RD1006LS-SB5 onsemi RD1006LS-SB5.pdf Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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RD1006LS-SB5 RD1006LS-SB5 onsemi RD1006LS-SB5.pdf Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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BFL4004 BFL4004 onsemi SNYOS15191-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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BFL4004 BFL4004 onsemi SNYOS15191-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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FDFMA2P029Z-F106 FDFMA2P029Z-F106 onsemi fdfma2p029z-d.pdf Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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FDFMA2P029Z-F106 FDFMA2P029Z-F106 onsemi fdfma2p029z-d.pdf Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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NVMFS6H852NT1G NVMFS6H852NT1G onsemi nvmfs6h852n-d.pdf Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H852NT1G NVMFS6H852NT1G onsemi nvmfs6h852n-d.pdf Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H854NTAG NVTFS6H854NTAG onsemi nvtfs6h854n-d.pdf Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Tape & Reel (TR)
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NVTFS6H854NTAG NVTFS6H854NTAG onsemi nvtfs6h854n-d.pdf Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Cut Tape (CT)
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NVTFS6H854NWFTAG NVTFS6H854NWFTAG onsemi nvtfs6h854n-d.pdf Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
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1500+0.8 EUR
3000+0.74 EUR
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NVTFS6H854NWFTAG NVTFS6H854NWFTAG onsemi nvtfs6h854n-d.pdf Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
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500+0.92 EUR
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NVTFS4C13NTWG NVTFS4C13NTWG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
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NVTFS4C13NTWG NVTFS4C13NTWG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
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NVTFS4C13NWFTWG NVTFS4C13NWFTWG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
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NVTFS4C13NWFTWG NVTFS4C13NWFTWG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
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NVTFS4C13NWFTAG NVTFS4C13NWFTAG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
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NVTFS4C13NWFTAG NVTFS4C13NWFTAG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
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NTD4815N-35G NTD4815N-35G onsemi ntd4815n-d.pdf Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V
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NTTFS6H854NTAG NTTFS6H854NTAG onsemi nttfs6h854n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
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SZMM5Z8V2T1G SZMM5Z8V2T1G onsemi mm5z2v4t1-d.pdf Description: DIODE ZENER 8.2V 500MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
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SZMM5Z8V2T1G SZMM5Z8V2T1G onsemi mm5z2v4t1-d.pdf Description: DIODE ZENER 8.2V 500MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
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NTBL060N065SC1 NTBL060N065SC1 onsemi NTBL060N065SC1-D.PDF Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
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NTBL060N065SC1 NTBL060N065SC1 onsemi NTBL060N065SC1-D.PDF Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
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CPH3114-TL-E CPH3114-TL-E onsemi en6394-d.pdf Description: TRANS PNP 15V 1.5A 3-CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
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CAT34C02HU4EGT4A CAT34C02HU4EGT4A onsemi cat34c02-d.pdf Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
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CAT34C02HU4EGT4A CAT34C02HU4EGT4A onsemi cat34c02-d.pdf Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
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FDU8880 FDU8880 onsemi FDU8880.pdf Description: MOSFET N-CH 30V 13A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Produkt ist nicht verfügbar
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FDU8876 FDU8876 onsemi FDD%2CFDU8876.pdf Description: MOSFET N-CH 30V 15A/73A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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CAT5119TBI50T-MP onsemi Description: IC REG LINEAR
Packaging: Bulk
DigiKey Programmable: Not Verified
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BD17910STU BD17910STU onsemi BD179-FCS-D.PDF Description: TRANS NPN 80V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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MMFT2N25ET3 MMFT2N25ET3 onsemi ONSMS36882-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
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FDMD8540L FDMD8540L onsemi fdmd8540l-d.pdf Description: MOSFET 2N-CH 40V 33A 8PWR 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A, 156A
Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
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CAT812MTBI-GT3 CAT812MTBI-GT3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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CAT812LTBI-T3 CAT812LTBI-T3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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CAT812LTBI-T3 CAT812LTBI-T3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812LTBI-T3 CAT812LTBI-T3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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CAT812TTBI-T3 CAT812TTBI-T3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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CAT812TTBI-T3 CAT812TTBI-T3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812TTBI-T3 CAT812TTBI-T3 onsemi CAT811%2C12-D.pdf Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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DA121TT1G DA121TT1G onsemi da121tt1-d.pdf Description: DIODE GP 80V 200MA SC75 SOT416
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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DAN222 onsemi dan222-d.pdf Description: DIODE SWITCH DUAL CC 80V SOT416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SZESD7102BT1G SZESD7102BT1G onsemi esd7102-d.pdf Description: TVS DIODE 5VWM 30VC SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.5V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AR0522SRSM09SURA0-DR AR0522SRSM09SURA0-DR onsemi AR0522_Web.pdf Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
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AR0522SRSC09SURA0-DR AR0522SRSC09SURA0-DR onsemi AR0522_Web.pdf Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
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2SD1816T-TL-E 2SD1816T-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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NL17SHT00P5T5G nl17sht00-d.pdf
NL17SHT00P5T5G
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Bulk
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NL17SHT04P5T5G nl17sht04-d.pdf
NL17SHT04P5T5G
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP SOT953
Packaging: Bulk
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SOT-953
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NCP139AFCT100T2G ncp139-d.pdf
NCP139AFCT100T2G
Hersteller: onsemi
Description: IC REG LINEAR 1V 1A 6-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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NCP139AFCT180T2G ncp139-d.pdf
NCP139AFCT180T2G
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.2x0.8)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 85dB ~ 70dB (1kHz)
Voltage Dropout (Max): 1.5V @ 1A
Protection Features: Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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NCP4326DR2G NCP4326-D.pdf
NCP4326DR2G
Hersteller: onsemi
Description: IC REG SECONDRY CTRL 3OUT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 15V
Operating Temperature: 0°C ~ 105°C
Applications: Secondary Controller, Quasi-Resonant Switchmode Power Supplies
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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NCP177BMX070TCG NCP177.pdf
NCP177BMX070TCG
Hersteller: onsemi
Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP177BMX070TCG NCP177.pdf
NCP177BMX070TCG
Hersteller: onsemi
Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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AnzahlPrivatkunde
3847+0.15 EUR
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NCP114BMX075TCG NCP114-D.PDF
NCP114BMX075TCG
Hersteller: onsemi
Description: NCP114 - LDO REGULATOR, 300 MA,
Packaging: Bulk
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.75V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
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AnzahlPrivatkunde
5236+0.12 EUR
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NCP177AMX070TCG ncp177-d.pdf
NCP177AMX070TCG
Hersteller: onsemi
Description: IC REG LINEAR 0.7V 500MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 0.7V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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FGY60T120SWD fgy60t120swd-d.pdf
FGY60T120SWD
Hersteller: onsemi
Description: IGBT FS 1200V 105A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 28.8ns/153.6ns
Switching Energy: 5.7mJ (on), 2.8mJ (off)
Test Condition: 600V, 60A, 4.7Ohm, 15V
Gate Charge: 174 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 635 W
auf Bestellung 377 Stücke:
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2+13.95 EUR
30+8.08 EUR
120+6.79 EUR
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NXH160T120L2Q2F2SG NXH160T120L2Q2-D.PDF
Hersteller: onsemi
Description: POWER INTEGRATED MODULE (PIM), I
Packaging: Bulk
auf Bestellung 240 Stücke:
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2+282.43 EUR
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SNXH160T120L2Q1PG SNXH160T120L2Q1PG_Rev3_Jul2016.pdf
SNXH160T120L2Q1PG
Hersteller: onsemi
Description: IGBT MODULE 1200V 140A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19380 pF @ 25 V
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1.5SMC27AT3 1.5_SZ1.5_SMC6.8AT3G_Series.pdf
1.5SMC27AT3
Hersteller: onsemi
Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1.5SMC27AT3 1.5_SZ1.5_SMC6.8AT3G_Series.pdf
1.5SMC27AT3
Hersteller: onsemi
Description: TVS DIODE 23.1VWM 37.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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RD1006LS-SB5 RD1006LS-SB5.pdf
RD1006LS-SB5
Hersteller: onsemi
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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150+3.67 EUR
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RD1006LS-SB5 RD1006LS-SB5.pdf
RD1006LS-SB5
Hersteller: onsemi
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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BFL4004 SNYOS15191-1.pdf?t.download=true&u=5oefqw
BFL4004
Hersteller: onsemi
Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
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BFL4004 SNYOS15191-1.pdf?t.download=true&u=5oefqw
BFL4004
Hersteller: onsemi
Description: MOSFET N-CH 800V 4.3A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Produkt ist nicht verfügbar
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FDFMA2P029Z-F106 fdfma2p029z-d.pdf
FDFMA2P029Z-F106
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Produkt ist nicht verfügbar
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FDFMA2P029Z-F106 fdfma2p029z-d.pdf
FDFMA2P029Z-F106
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.1A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Produkt ist nicht verfügbar
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NVMFS6H852NT1G nvmfs6h852n-d.pdf
NVMFS6H852NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H852NT1G nvmfs6h852n-d.pdf
NVMFS6H852NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFS6H854NTAG nvtfs6h854n-d.pdf
NVTFS6H854NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVTFS6H854NTAG nvtfs6h854n-d.pdf
NVTFS6H854NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Cut Tape (CT)
auf Bestellung 1490 Stücke:
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11+1.9 EUR
14+1.56 EUR
100+1.21 EUR
500+1.04 EUR
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NVTFS6H854NWFTAG nvtfs6h854n-d.pdf
NVTFS6H854NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.8 EUR
3000+0.74 EUR
4500+0.7 EUR
7500+0.67 EUR
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NVTFS6H854NWFTAG nvtfs6h854n-d.pdf
NVTFS6H854NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 9.5A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 9077 Stücke:
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8+2.78 EUR
12+1.76 EUR
100+1.17 EUR
500+0.92 EUR
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NVTFS4C13NTWG nvtfs4c13n-d.pdf
NVTFS4C13NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVTFS4C13NTWG nvtfs4c13n-d.pdf
NVTFS4C13NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
auf Bestellung 4958 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
13+1.62 EUR
100+1.25 EUR
500+1.06 EUR
1000+0.87 EUR
2000+0.82 EUR
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NVTFS4C13NWFTWG nvtfs4c13n-d.pdf
NVTFS4C13NWFTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
5000+0.98 EUR
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NVTFS4C13NWFTWG nvtfs4c13n-d.pdf
NVTFS4C13NWFTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
11+2.02 EUR
100+1.57 EUR
500+1.33 EUR
1000+1.08 EUR
2000+1.02 EUR
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NVTFS4C13NWFTAG nvtfs4c13n-d.pdf
NVTFS4C13NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVTFS4C13NWFTAG nvtfs4c13n-d.pdf
NVTFS4C13NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
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11+2.02 EUR
100+1.57 EUR
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NTD4815N-35G ntd4815n-d.pdf
NTD4815N-35G
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V
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NTTFS6H854NTAG nttfs6h854n-d.pdf
NTTFS6H854NTAG
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SZMM5Z8V2T1G mm5z2v4t1-d.pdf
SZMM5Z8V2T1G
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
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SZMM5Z8V2T1G mm5z2v4t1-d.pdf
SZMM5Z8V2T1G
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD523
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
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38+0.57 EUR
55+0.39 EUR
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NTBL060N065SC1 NTBL060N065SC1-D.PDF
NTBL060N065SC1
Hersteller: onsemi
Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Produkt ist nicht verfügbar
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NTBL060N065SC1 NTBL060N065SC1-D.PDF
NTBL060N065SC1
Hersteller: onsemi
Description: M2 650V SIC MOSFET 60MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
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2+18.96 EUR
10+13.01 EUR
50+10.46 EUR
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CPH3114-TL-E en6394-d.pdf
CPH3114-TL-E
Hersteller: onsemi
Description: TRANS PNP 15V 1.5A 3-CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 15mA, 750mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
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1758+0.31 EUR
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CAT34C02HU4EGT4A cat34c02-d.pdf
CAT34C02HU4EGT4A
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
Produkt ist nicht verfügbar
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CAT34C02HU4EGT4A cat34c02-d.pdf
CAT34C02HU4EGT4A
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
Produkt ist nicht verfügbar
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FDU8880 FDU8880.pdf
FDU8880
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Produkt ist nicht verfügbar
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FDU8876 FDD%2CFDU8876.pdf
FDU8876
Hersteller: onsemi
Description: MOSFET N-CH 30V 15A/73A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Produkt ist nicht verfügbar
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CAT5119TBI50T-MP
Hersteller: onsemi
Description: IC REG LINEAR
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BD17910STU BD179-FCS-D.PDF
BD17910STU
Hersteller: onsemi
Description: TRANS NPN 80V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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MMFT2N25ET3 ONSMS36882-1.pdf?t.download=true&u=5oefqw
MMFT2N25ET3
Hersteller: onsemi
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1902+0.31 EUR
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FDMD8540L fdmd8540l-d.pdf
FDMD8540L
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 33A 8PWR 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A, 156A
Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
Produkt ist nicht verfügbar
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CAT812MTBI-GT3 CAT811%2C12-D.pdf
CAT812MTBI-GT3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812LTBI-T3 CAT811%2C12-D.pdf
CAT812LTBI-T3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812LTBI-T3 CAT811%2C12-D.pdf
CAT812LTBI-T3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812LTBI-T3 CAT811%2C12-D.pdf
CAT812LTBI-T3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
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1211+0.49 EUR
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CAT812TTBI-T3 CAT811%2C12-D.pdf
CAT812TTBI-T3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812TTBI-T3 CAT811%2C12-D.pdf
CAT812TTBI-T3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT812TTBI-T3 CAT811%2C12-D.pdf
CAT812TTBI-T3
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 3.08V
Supplier Device Package: SOT-143-4
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
1211+0.49 EUR
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DA121TT1G da121tt1-d.pdf
DA121TT1G
Hersteller: onsemi
Description: DIODE GP 80V 200MA SC75 SOT416
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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AnzahlPrivatkunde
11539+0.058 EUR
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DAN222 dan222-d.pdf
Hersteller: onsemi
Description: DIODE SWITCH DUAL CC 80V SOT416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SZESD7102BT1G esd7102-d.pdf
SZESD7102BT1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 30VC SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.5V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AR0522SRSM09SURA0-DR AR0522_Web.pdf
AR0522SRSM09SURA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 5305 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+62.77 EUR
10+52.3 EUR
25+46.33 EUR
80+44.83 EUR
440+41.84 EUR
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AR0522SRSC09SURA0-DR AR0522_Web.pdf
AR0522SRSC09SURA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+42.14 EUR
5+38.6 EUR
10+37.28 EUR
25+35.7 EUR
50+34.71 EUR
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2SD1816T-TL-E 2sb1216_2sd1816-d.pdf
2SD1816T-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
516+1.04 EUR
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