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SZMM5Z4V3T5G SZMM5Z4V3T5G onsemi Description: DIODE ZENER 4.3V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZMM5Z4V3T5G SZMM5Z4V3T5G onsemi Description: DIODE ZENER 4.3V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±6.98%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CAT6217-250TDGT3 CAT6217-250TDGT3 onsemi cat6217-d.pdf Description: IC REG LIN 2.5V 150MA TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 64dB ~ 54dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.15V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
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CAT6217-250TDGT3 CAT6217-250TDGT3 onsemi cat6217-d.pdf Description: IC REG LIN 2.5V 150MA TSOT23-5
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 64dB ~ 54dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.15V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
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MC74VHC541MELG MC74VHC541MELG onsemi mc74vhc541-d.pdf Description: IC BUFF NON-INVERT 5.5V SOEIAJ20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SOEIAJ-20
Produkt ist nicht verfügbar
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NXH010P120MNF1PNG NXH010P120MNF1PNG onsemi nxh010p120mnf1-d.pdf Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
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NXH003P120M3F2PTHG NXH003P120M3F2PTHG onsemi nxh003p120m3f2pthg-d.pdf Description: MOSFET 2N-CH 1200V 350A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 979W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
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NXH004P120M3F2PTHG NXH004P120M3F2PTHG onsemi nxh004p120m3f2pthg-d.pdf Description: MOSFET 2N-CH 1200V 284A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 785W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 284A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
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NXH011T120M3F2PTHG NXH011T120M3F2PTHG onsemi nxh011t120m3f2-d.pdf Description: MOSFET 4N-CH 1200V 91A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V
Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Supplier Device Package: 29-PIM (56.7x42.5)
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NXH003P120M3F2PTNG NXH003P120M3F2PTNG onsemi nxh003p120m3f2ptng-d.pdf Description: MOSFET 2N-CH 1200V 435A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.48kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
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NXH006P120MNF2PTG NXH006P120MNF2PTG onsemi nxh006p120mnf2-d.pdf Description: SIC MODULES HALF BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: Half Bridge Inverter
Voltage - Isolation: 3000Vrms
Current: 304 A
Voltage: 1.2 kV
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NXH040P120MNF1PTG NXH040P120MNF1PTG onsemi nxh040p120mnf1-d.pdf Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
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NXH040P120MNF1PG NXH040P120MNF1PG onsemi nxh040p120mnf1-d.pdf Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
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CAT34C02HU4I-GT4 CAT34C02HU4I-GT4 onsemi CAT34C02.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT34C02HU4I-GT4 CAT34C02HU4I-GT4 onsemi CAT34C02.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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SZESD9902MLT1G SZESD9902MLT1G onsemi szesd9902-d.pdf Description: TVS DIODE 25VWM SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 25V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 100V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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KSD1616ALTA KSD1616ALTA onsemi KSD1616A.pdf Description: TRANS NPN 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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NCV4333DR2G NCV4333DR2G onsemi ncs333-d.pdf Description: IC OPAMP ZERO-DRIFT 4CIRC 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 28µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
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NCV4333DR2G NCV4333DR2G onsemi ncs333-d.pdf Description: IC OPAMP ZERO-DRIFT 4CIRC 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 28µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 1377 Stücke:
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10+2.28 EUR
25+2.16 EUR
100+1.66 EUR
250+1.47 EUR
500+1.39 EUR
1000+1.08 EUR
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FSAV433MTCX FSAV433MTCX onsemi ONSM-S-A0003588616-1.pdf?t.download=true&u=5oefqw Description: IC SWITCH VIDEO 3CH 3:1 20TSSOP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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H11L1M H11L1M onsemi H11L3M-D.PDF Description: OPTOISO 4.17KV OPEN COLL 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
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50+0.88 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.64 EUR
2000+0.61 EUR
5000+0.57 EUR
10000+0.54 EUR
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74LVC06ADR2G 74LVC06ADR2G onsemi 74lvc06a-d.pdf Description: IC INVERTER
Packaging: Bulk
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74LVC06ADTR2G 74LVC06ADTR2G onsemi 74lvc06a-d.pdf Description: IC INVERTER
Packaging: Bulk
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74LVC06ADR2G 74LVC06ADR2G onsemi 74lvc06a-d.pdf Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 40 µA
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74LVC06ADTR2G 74LVC06ADTR2G onsemi 74lvc06a-d.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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SMUN5114T1 SMUN5114T1 onsemi ONSMS13816-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 202MW SC70-3
Packaging: Bulk
auf Bestellung 276000 Stücke:
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MMSD914T1 MMSD914T1 onsemi mmsd914t1-d.pdf Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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NCV303LSN14T1G NCV303LSN14T1G onsemi ncp302-d.pdf Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.4V
Supplier Device Package: 5-TSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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861+0.57 EUR
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74VHC164M 74VHC164M onsemi 74vhc164-d.pdf Description: IC SR PUSH-PULL 8BIT 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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FQPF5N50CYDTU FQPF5N50CYDTU onsemi FQP5N50C%2C%20FQPF5N50C.pdf Description: MOSFET N-CH 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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FQP9N50 FQP9N50 onsemi FQP9N50_DS.pdf Description: MOSFET N-CH 500V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
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KA358A-T onsemi Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Amplifier Type: Standard
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 800µA
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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FDMF5820TDC FDMF5820TDC onsemi fdmf5820tdc-d.pdf Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters, Synchronous Buck Converter
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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FDMF5820TDC FDMF5820TDC onsemi fdmf5820tdc-d.pdf Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Bulk
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters, Synchronous Buck Converter
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
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MC100EP101FA MC100EP101FA onsemi Description: IC GATE OR/NOR QUAD 4INP 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-LQFP (7x7)
Number of Circuits: 4
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MC10EP101MNG MC10EP101MNG onsemi Description: IC GATE OR/NOR QUAD 4INP 32-QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-QFN (5x5)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC100EP101MNR4G MC100EP101MNR4G onsemi Description: IC GATE OR/NOR QUAD 4INP 32-QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-QFN (5x5)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC100EP101FAR2G MC100EP101FAR2G onsemi Description: IC GATE OR/NOR QUAD 4INP 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-LQFP (7x7)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC74HC11ADTG MC74HC11ADTG onsemi mc74hc11a-d.pdf Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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FGA50S110P FGA50S110P onsemi fga50s110p-d.pdf Description: IGBT TRENCH/FS 1100V 50A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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FDBL86066-F085AW FDBL86066-F085AW onsemi Description: MOSFET N-CH 100V 185A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS16LT3 BAS16LT3 onsemi bas16lt1-d.pdf Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BASH19LT1G BASH19LT1G onsemi BASH19L-D.PDF Description: DIODE GP 120V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
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BASH19LT1G BASH19LT1G onsemi BASH19L-D.PDF Description: DIODE GP 120V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
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NSVBASH19LT1G NSVBASH19LT1G onsemi BASH19L-D.PDF Description: DIODE GP 120V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Qualification: AEC-Q101
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NSVBASH19LT1G NSVBASH19LT1G onsemi BASH19L-D.PDF Description: DIODE GP 120V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Qualification: AEC-Q101
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SZBZX84C39LT1G SZBZX84C39LT1G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 39V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
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SZBZX84C39LT1G SZBZX84C39LT1G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 39V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
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NSVMMBT589LT1G NSVMMBT589LT1G onsemi mmbt589lt1-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
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NSVMMBT589LT1G NSVMMBT589LT1G onsemi mmbt589lt1-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
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BZX84C3V9LT1 BZX84C3V9LT1 onsemi BZX84C2V4LT1-D%2CBZX84B4V7LT1.pdf Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BAS19LT1 BAS19LT1 onsemi bas19lt1-d.pdf Description: DIODE STANDARD 120V 200MA SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
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FQU2N90TU-AM002 FQU2N90TU-AM002 onsemi fqu2n90tu_am002-d.pdf Description: MOSFET N-CH 900V 1.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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MPSW06 MPSW06 onsemi MPSW06.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW06 MPSW06 onsemi MPSW06.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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CM1442-08CP CM1442-08CP onsemi cm1442-d.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Bulk
Package / Case: 20-WFBGA, WLCSP
Size / Dimension: 0.124" L x 0.041" W (3.16mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 15pF
Height: 0.028" (0.70mm)
Attenuation Value: 30dB @ 1GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 115MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
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FCP9N60N-F102 FCP9N60N-F102 onsemi Description: MOSFET N-CHANNEL 600V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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FDN335N FDN335N onsemi FDN335N-D.PDF Description: MOSFET N-CH 20V 1.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
Mindestbestellmenge: 3000
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FDN335N FDN335N onsemi FDN335N-D.PDF Description: MOSFET N-CH 20V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 18701 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
28+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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LE25FW406ATT-TLM-H-D onsemi Description: IC FLASH MEM 4MBIT SERIAL 8MSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SZMM5Z4V3T5G
SZMM5Z4V3T5G
Hersteller: onsemi
Description: DIODE ZENER 4.3V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZMM5Z4V3T5G
SZMM5Z4V3T5G
Hersteller: onsemi
Description: DIODE ZENER 4.3V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±6.98%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CAT6217-250TDGT3 cat6217-d.pdf
CAT6217-250TDGT3
Hersteller: onsemi
Description: IC REG LIN 2.5V 150MA TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 64dB ~ 54dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.15V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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CAT6217-250TDGT3 cat6217-d.pdf
CAT6217-250TDGT3
Hersteller: onsemi
Description: IC REG LIN 2.5V 150MA TSOT23-5
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: TSOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 64dB ~ 54dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.15V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
auf Bestellung 157400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
951+0.52 EUR
Mindestbestellmenge: 951
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MC74VHC541MELG mc74vhc541-d.pdf
MC74VHC541MELG
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V SOEIAJ20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SOEIAJ-20
Produkt ist nicht verfügbar
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NXH010P120MNF1PNG nxh010p120mnf1-d.pdf
NXH010P120MNF1PNG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 29 Stücke:
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Anzahl Preis
1+192.39 EUR
28+166.33 EUR
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NXH003P120M3F2PTHG nxh003p120m3f2pthg-d.pdf
NXH003P120M3F2PTHG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 350A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 979W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 343 Stücke:
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Anzahl Preis
1+315.57 EUR
20+297.25 EUR
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NXH004P120M3F2PTHG nxh004p120m3f2pthg-d.pdf
NXH004P120M3F2PTHG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 284A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 785W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 284A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 15 Stücke:
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Anzahl Preis
1+268.51 EUR
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NXH011T120M3F2PTHG nxh011t120m3f2-d.pdf
NXH011T120M3F2PTHG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 91A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V
Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Supplier Device Package: 29-PIM (56.7x42.5)
auf Bestellung 13928 Stücke:
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Anzahl Preis
1+183.46 EUR
20+155.29 EUR
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NXH003P120M3F2PTNG nxh003p120m3f2ptng-d.pdf
NXH003P120M3F2PTNG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 435A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.48kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+339.31 EUR
20+323.38 EUR
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NXH006P120MNF2PTG nxh006p120mnf2-d.pdf
NXH006P120MNF2PTG
Hersteller: onsemi
Description: SIC MODULES HALF BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: Half Bridge Inverter
Voltage - Isolation: 3000Vrms
Current: 304 A
Voltage: 1.2 kV
auf Bestellung 1220 Stücke:
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1+335.03 EUR
20+315.32 EUR
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NXH040P120MNF1PTG nxh040p120mnf1-d.pdf
NXH040P120MNF1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
auf Bestellung 112 Stücke:
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Anzahl Preis
1+110.42 EUR
28+85.6 EUR
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NXH040P120MNF1PG nxh040p120mnf1-d.pdf
NXH040P120MNF1PG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
auf Bestellung 82 Stücke:
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Anzahl Preis
1+110.42 EUR
28+85.6 EUR
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CAT34C02HU4I-GT4 CAT34C02.pdf
CAT34C02HU4I-GT4
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT34C02HU4I-GT4 CAT34C02.pdf
CAT34C02HU4I-GT4
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 40824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
673+0.68 EUR
Mindestbestellmenge: 673
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SZESD9902MLT1G szesd9902-d.pdf
SZESD9902MLT1G
Hersteller: onsemi
Description: TVS DIODE 25VWM SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 25V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 100V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
109+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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KSD1616ALTA KSD1616A.pdf
KSD1616ALTA
Hersteller: onsemi
Description: TRANS NPN 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 750 mW
Produkt ist nicht verfügbar
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NCV4333DR2G ncs333-d.pdf
NCV4333DR2G
Hersteller: onsemi
Description: IC OPAMP ZERO-DRIFT 4CIRC 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 28µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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NCV4333DR2G ncs333-d.pdf
NCV4333DR2G
Hersteller: onsemi
Description: IC OPAMP ZERO-DRIFT 4CIRC 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 28µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 6 µV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 11 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 1377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
10+2.28 EUR
25+2.16 EUR
100+1.66 EUR
250+1.47 EUR
500+1.39 EUR
1000+1.08 EUR
Mindestbestellmenge: 7
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FSAV433MTCX ONSM-S-A0003588616-1.pdf?t.download=true&u=5oefqw
FSAV433MTCX
Hersteller: onsemi
Description: IC SWITCH VIDEO 3CH 3:1 20TSSOP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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H11L1M H11L3M-D.PDF
H11L1M
Hersteller: onsemi
Description: OPTOISO 4.17KV OPEN COLL 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 17692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
50+0.88 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.64 EUR
2000+0.61 EUR
5000+0.57 EUR
10000+0.54 EUR
Mindestbestellmenge: 12
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74LVC06ADR2G 74lvc06a-d.pdf
74LVC06ADR2G
Hersteller: onsemi
Description: IC INVERTER
Packaging: Bulk
auf Bestellung 67475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3253+0.15 EUR
Mindestbestellmenge: 3253
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74LVC06ADTR2G 74lvc06a-d.pdf
74LVC06ADTR2G
Hersteller: onsemi
Description: IC INVERTER
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3253+0.15 EUR
Mindestbestellmenge: 3253
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74LVC06ADR2G 74lvc06a-d.pdf
74LVC06ADR2G
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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74LVC06ADTR2G 74lvc06a-d.pdf
74LVC06ADTR2G
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.2V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 40 µA
Produkt ist nicht verfügbar
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SMUN5114T1 ONSMS13816-1.pdf?t.download=true&u=5oefqw
SMUN5114T1
Hersteller: onsemi
Description: TRANS PREBIAS PNP 202MW SC70-3
Packaging: Bulk
auf Bestellung 276000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6662+0.081 EUR
Mindestbestellmenge: 6662
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MMSD914T1 mmsd914t1-d.pdf
MMSD914T1
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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NCV303LSN14T1G ncp302-d.pdf
NCV303LSN14T1G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.4V
Supplier Device Package: 5-TSOP
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
861+0.57 EUR
Mindestbestellmenge: 861
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74VHC164M 74vhc164-d.pdf
74VHC164M
Hersteller: onsemi
Description: IC SR PUSH-PULL 8BIT 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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FQPF5N50CYDTU FQP5N50C%2C%20FQPF5N50C.pdf
FQPF5N50CYDTU
Hersteller: onsemi
Description: MOSFET N-CH 500V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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FQP9N50 FQP9N50_DS.pdf
FQP9N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
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KA358A-T
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Amplifier Type: Standard
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 800µA
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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FDMF5820TDC fdmf5820tdc-d.pdf
FDMF5820TDC
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters, Synchronous Buck Converter
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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FDMF5820TDC fdmf5820tdc-d.pdf
FDMF5820TDC
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Bulk
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters, Synchronous Buck Converter
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
auf Bestellung 143331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+3.65 EUR
Mindestbestellmenge: 124
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MC100EP101FA
MC100EP101FA
Hersteller: onsemi
Description: IC GATE OR/NOR QUAD 4INP 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-LQFP (7x7)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC10EP101MNG
MC10EP101MNG
Hersteller: onsemi
Description: IC GATE OR/NOR QUAD 4INP 32-QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-QFN (5x5)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC100EP101MNR4G
MC100EP101MNR4G
Hersteller: onsemi
Description: IC GATE OR/NOR QUAD 4INP 32-QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-QFN (5x5)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC100EP101FAR2G
MC100EP101FAR2G
Hersteller: onsemi
Description: IC GATE OR/NOR QUAD 4INP 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: NOR/OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 16 Input (4, 4, 4, 4)
Schmitt Trigger Input: No
Supplier Device Package: 32-LQFP (7x7)
Number of Circuits: 4
Produkt ist nicht verfügbar
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MC74HC11ADTG mc74hc11a-d.pdf
MC74HC11ADTG
Hersteller: onsemi
Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 27204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
944+0.52 EUR
Mindestbestellmenge: 944
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FGA50S110P fga50s110p-d.pdf
FGA50S110P
Hersteller: onsemi
Description: IGBT TRENCH/FS 1100V 50A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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FDBL86066-F085AW
FDBL86066-F085AW
Hersteller: onsemi
Description: MOSFET N-CH 100V 185A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS16LT3 bas16lt1-d.pdf
BAS16LT3
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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BASH19LT1G BASH19L-D.PDF
BASH19LT1G
Hersteller: onsemi
Description: DIODE GP 120V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.049 EUR
9000+0.045 EUR
15000+0.042 EUR
30000+0.041 EUR
Mindestbestellmenge: 3000
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BASH19LT1G BASH19L-D.PDF
BASH19LT1G
Hersteller: onsemi
Description: DIODE GP 120V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
93+0.19 EUR
162+0.11 EUR
500+0.083 EUR
1000+0.07 EUR
Mindestbestellmenge: 56
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NSVBASH19LT1G BASH19L-D.PDF
NSVBASH19LT1G
Hersteller: onsemi
Description: DIODE GP 120V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Qualification: AEC-Q101
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.096 EUR
6000+0.088 EUR
9000+0.085 EUR
15000+0.081 EUR
21000+0.08 EUR
30000+0.073 EUR
Mindestbestellmenge: 3000
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NSVBASH19LT1G BASH19L-D.PDF
NSVBASH19LT1G
Hersteller: onsemi
Description: DIODE GP 120V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Qualification: AEC-Q101
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
57+0.31 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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SZBZX84C39LT1G bzx84c2v4lt1-d.pdf
SZBZX84C39LT1G
Hersteller: onsemi
Description: DIODE ZENER 39V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
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SZBZX84C39LT1G bzx84c2v4lt1-d.pdf
SZBZX84C39LT1G
Hersteller: onsemi
Description: DIODE ZENER 39V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Qualification: AEC-Q101
auf Bestellung 71580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 24
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NSVMMBT589LT1G mmbt589lt1-d.pdf
NSVMMBT589LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
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NSVMMBT589LT1G mmbt589lt1-d.pdf
NSVMMBT589LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
auf Bestellung 17640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
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BZX84C3V9LT1 BZX84C2V4LT1-D%2CBZX84B4V7LT1.pdf
BZX84C3V9LT1
Hersteller: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 335950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9458+0.049 EUR
Mindestbestellmenge: 9458
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BAS19LT1 bas19lt1-d.pdf
BAS19LT1
Hersteller: onsemi
Description: DIODE STANDARD 120V 200MA SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9458+0.045 EUR
Mindestbestellmenge: 9458
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FQU2N90TU-AM002 fqu2n90tu_am002-d.pdf
FQU2N90TU-AM002
Hersteller: onsemi
Description: MOSFET N-CH 900V 1.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
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MPSW06 MPSW06.pdf
MPSW06
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2219+0.24 EUR
Mindestbestellmenge: 2219
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MPSW06 MPSW06.pdf
MPSW06
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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CM1442-08CP cm1442-d.pdf
CM1442-08CP
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Bulk
Package / Case: 20-WFBGA, WLCSP
Size / Dimension: 0.124" L x 0.041" W (3.16mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 15pF
Height: 0.028" (0.70mm)
Attenuation Value: 30dB @ 1GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 115MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
auf Bestellung 124598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
788+0.57 EUR
Mindestbestellmenge: 788
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FCP9N60N-F102
FCP9N60N-F102
Hersteller: onsemi
Description: MOSFET N-CHANNEL 600V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
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FDN335N FDN335N-D.PDF
FDN335N
Hersteller: onsemi
Description: MOSFET N-CH 20V 1.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
Mindestbestellmenge: 3000
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FDN335N FDN335N-D.PDF
FDN335N
Hersteller: onsemi
Description: MOSFET N-CH 20V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 18701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
28+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
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LE25FW406ATT-TLM-H-D
Hersteller: onsemi
Description: IC FLASH MEM 4MBIT SERIAL 8MSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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